JPWO2019131564A1 - Apparatus for measuring chemical/physical phenomenon and manufacturing method thereof - Google Patents

Abstract

A sensing unit that changes the depth of the potential well according to the surface potential, a sensitive film that covers the sensing unit, and a detection region that outputs an electric signal according to the depth of the potential well of the sensing unit. The gas component of the gas is suitably measured by using the chemical/physical measurement device including the chemical/physical phenomenon measurement unit array. A constant potential part is arranged close to the array of measurement units. The constant potential portion is arranged along the arrangement rule of the array of the measurement unit in a plan view, and the reference point of the array and the reference point of the constant potential portion coincide with each other.

Description

  The present invention relates to improvement of a measuring device for chemical/physical phenomena.

A so-called Sawada unit that uses floating diffusion is known as a measuring device for chemical and physical phenomena.
This Sawada unit 1 has the following basic structure.
For example, as shown in FIG. 1, the sensing unit 10, the charge supply unit 20, the charge transfer/accumulation unit 30, the charge amount detection unit 40, and the charge removal unit 50 are formed on the surface of the silicon substrate. The sensing unit 10 is provided with a sensitive film 12 that changes the potential according to the detection target and a standard electrode 13. The depth of the potential well 15 of the sensing unit 10 (p diffusion region 72) changes according to the potential change of the sensitive film 12.

The charge supply section 20 includes an injection diode section (sometimes abbreviated as “ID section” in this specification) 21 and an input control gate section (sometimes abbreviated as “ICG section” in this specification) 23. By charging the ID section 21 with electric charges and controlling the potential of the ICG section 23, the electric charge of the ID section 21 is supplied to the potential well 15 of the sensing section 10.
The charge transfer/accumulation unit 30 includes a transfer gate unit (may be abbreviated as “TG unit” in this specification) 31 and a floating diffusion unit (may be abbreviated as “FD unit” in this specification) 33. . By changing the voltage of the TG section 31, the potential of the opposing region of the silicon substrate 71 is changed, so that the electric charge filled in the potential well 15 of the sensing section 10 is transferred to the FD section 33 and accumulated therein.

The charges accumulated in the FD section 33 are detected by the charge amount detection section 40. A source follower type signal amplifier can be used as the charge amount detection unit 40.
The charge removing unit 50 includes a reset gate unit (which may be abbreviated as “RG unit” in this specification) 51 and a reset drain unit (which may be abbreviated as “RD unit” in this specification) 53. .. By changing the voltage of the RG portion 51, the potential of the opposing region of the silicon substrate 71 is changed, so that the charges accumulated in the FD portion 33 are transferred to the RD portion 53 and discharged therefrom.

  The detailed structure and operation of this detection device will be described by taking a pH sensor whose hydrogen ion concentration is a detection target as an example. In the following description, electrons are used as electric charges, and the target portion of the substrate 71 is appropriately doped so as to be suitable for transporting the electrons.

The detection device 1 as a pH sensor includes an n-type silicon substrate 71, and a portion corresponding to the sensing unit 10 is a p-type diffusion layer 72. The surface of the p-type diffusion layer 72 is n-type doped (n region 73).
In the silicon substrate 71, n+ regions 74, 75 and 77 are formed in the ID part 21, the FD part 33 and the RD part 53.
A protective film 81 made of silicon oxide is formed on the surface of the silicon substrate 71, and an electrode of the ICG portion 23, an electrode of the TG portion 31, and an electrode of the RG portion 51 are laminated on the protective film 81. When a voltage is applied to each electrode, the potential of the silicon substrate 71 at the portion facing it changes.
In the sensing unit 10, the sensitive film 12 made of silicon nitride is laminated on the protective film 81.

The basic operation of the Sawada unit 1 thus configured will be described below (see FIG. 2).
When the sensing unit 10 is brought into contact with the aqueous solution to be detected, the depth of the potential well 15 of the sensing unit 10 changes according to the hydrogen ion concentration of the aqueous solution (step (A)). That is, as the hydrogen ion concentration increases, the potential well 15 becomes deeper (the bottom potential becomes higher).
On the other hand, the electric potential of the ID section 21 is lowered and electric charges are charged therein (see step (B)). At this time, the charges charged in the ID section 21 exceed the ICG section 23 and fill the potential well 15 of the sensing section 10. Note that the potential of the TG portion 31 is lower than that of the ICG portion 23, and the electric charge filled in the potential well 15 does not go over the TG portion 31 and reach the FD portion 33.

Next, the electric potential of the ID section 21 is raised to extract the electric charge from the ID section 21, so that the electric charge cleared by the ICG section 23 is left in the potential well 15 (see step (C)). Here, the amount of charges left in the potential well 15 corresponds to the depth of the potential well 15, that is, the concentration of hydrogen ions to be detected.
Next, the potential of the TG section 31 is raised to transfer the charges left in the potential well 15 to the FD section 33 (see step (D)). The amount of charges accumulated in the FD unit 33 in this way is detected by the charge amount detector 40 (see step (E)). After that, the potential of the RG portion 51 is raised and the electric charge of the FD portion 33 is discharged to the RD portion 53 (see step (F)). The RD portion 53 is connected to VDD and absorbs negatively charged charges.

Patent No. 6083753 JP, 2008-145128, A JP 2006-084417 A Japanese Patent Laid-Open No. 05-332989 JP, 2016-066745, A JP, 11-295255, A

2016 National University Corporation Toyohashi University of Technology Electrical and Electronic Information Engineering Course Graduation Research Report Summary Presentation No. 47

The Sawada unit described with reference to FIGS. 1 and 2 measures the hydrogen ion concentration, so the measurement target is a conductive liquid. Therefore, even in an array in which a plurality of Sawada units are two-dimensionally arranged, the standard electrode may be arranged in a part of the array and brought into contact with the liquid. This is because if the standard electrode comes into contact with the measurement target that is a conductive liquid, the potential of the measurement target becomes constant over the entire area.
By selecting the sensitive film in the configuration of FIG. 1, the concentration of any chemical component can be measured. For example, when a polyaniline sensitive film is formed on a sensitive film made of a silicon nitride film, the potential of the polyaniline sensitive film changes according to the concentration of ethanol or ammonia.

When such an array of Sawada unit was applied to gas measurement, there were the following problems.
Since only one standard electrode is arranged for each array, it cannot be guaranteed that the potential of the measurement target (gas) that contacts the sensitive film covering the sensing portion of each array is constant. That is, the gas to be measured is substantially insulative, and even though the constituent material of the sensitive film (polyaniline) is a conductive polymer material, its conductivity is limited. Even if the electrodes are in contact, the potential of the sensitive membrane in contact with the sensing section of each Sawada unit cannot be made uniform in the entire array.

The inventors of the present invention have made earnest studies to appropriately measure the gas component of a gas using a chemical/physical measurement device including an array of Sawada unit, and have arrived at the present invention having the following configuration.
That is, the first aspect of the present invention is defined as follows.
A sensing unit that changes the depth of the potential well according to the surface potential, a sensitive film that covers the sensing unit, and a detection region that outputs an electric signal according to the depth of the potential well of the sensing unit. An array of measuring units for chemical and physical phenomena
A constant potential part arranged in the vicinity of the array of the measurement unit, wherein the constant potential part is arranged along the arrangement rule of the array of the measurement unit in plan view, and the reference point of the array. A constant potential part in which the reference point of the constant potential part matches,
Measuring device for chemical and physical phenomena equipped with.

  According to the measuring device of the first aspect of the present invention defined in this way, the constant potential part is arranged in proximity to the array according to the arrangement rule of the array of the measurement unit, and the reference of the constant potential part. The points and the reference point of the array coincide. Here, the constant potential part may be arranged on the array via a sensitive film covering the array, or may be arranged on the same plane as the array, that is, below the polyaniline film. That the constant potential part follows the array rule of the array means that there is a predetermined relationship between the two-dimensional array direction of the array and its pitch and the two-dimensional shape of the constant potential part and its pitch. . In addition, matching the reference point of the constant potential part with the reference point of the array means that the positional relationship between the two is defined with some intention.

As described above, the positional relationship between the sensing unit and the constant potential unit of the measurement unit can be accurately controlled. This facilitates control of the potential of the sensitive film that contacts the sensing portion of each measurement unit.
It is considered that in a sensitive film that is sensitive to changes in chemical and physical phenomena, carrier density changes, and as a result, material properties (such as conductivity) change at a constant rate. Therefore, if the sensitive membrane before sensing chemical/physical phenomena, that is, the sensitive membrane in the default state is maintained at the standard potential, when it is sensitive to chemical/physical phenomenon (for example, a sensitive membrane made of polyaniline is used). When contacted with ethanol gas), the outputs of all the measurement units of the array show values according to the chemical/physical phenomenon.
Based on such a premise, if the potentials of the sensitive film in contact with the sensing unit can be controlled and aligned, the output of each measurement unit can be accurately reflected on the chemical/physical phenomenon to be measured.
Depending on the sensitivity required of the measuring device, the variation in the potential of the sensitive film in contact with the sensing part of each measuring unit is allowed, and the error in the distance from each sensing part to the constant potential part is specified. From the viewpoint of the sensitivity required for the measuring device, it can be said that the potential of the sensitive film in contact with each sensing unit is made substantially constant within the range.

  Here, the measurement units are generally arranged in a grid pattern in plan view, that is, at the same pitch in the XY directions. In this case, the constant potential part is also arranged along the XY direction. Further, the reference point of the constant potential part and the reference point of the array of the measurement unit are made to coincide with each other in plan view. Here, the reference point refers to the position of (0, 0) in the element that spreads two-dimensionally (X, Y). As a result, the measurement unit and the constant-potential portion are accurately aligned with each other, so that the potential of the sensing portion of each measurement unit is made uniform.

In the above, when the sensitivity required for the measuring device is high and the conductivity of the sensitive film is small, the constant potential part is located as close as possible to the sensing part of the measuring unit, and preferably is positioned directly above it. If the measurement units are arranged in a grid pattern, the constant potential parts have a mesh structure with the same pitch. That is, it suffices to provide one continuous element (member) called a mesh structure for a plurality of measurement units forming an array. Therefore, there is almost no burden on the integrated circuit for wiring. From the viewpoint of ensuring the opening area of the sensing unit, the mesh may surround each sensing unit one by one or collectively.
Further, when the sensitivity required for the measuring device is relatively low, the constant potential parts may be arranged in parallel.

According to the measurement device defined in the first aspect, the position of each measurement unit forming the array with respect to the sensing unit is stable. As a result, the potentials of the sensitive film in contact with the sensing unit are made uniform, and the depth of the potential well of the sensing unit of the measurement unit changes according to the amount of chemical/physical phenomenon of the measurement target with this potential as a reference. An electric signal corresponding to the depth of the potential well is output from the detection region.
Even when the measurement target is an insulating liquid or solid, by adopting the measurement device of the first aspect, the electrical signal from the measurement unit corresponds to the chemical quantity or physical quantity of the measurement target. Become.
Since the constant potential part is arranged along the arrangement rule of the array of measurement units, this can be one continuous element (member). As a result, the load on the wiring can be reduced as compared with the structure in which the independent standard electrode is arranged in each of the sensing units of each measurement unit.

The second aspect of the present invention is defined as follows. That is, in the measuring device defined in the first aspect, the constant potential unit is arranged on the array of the measuring units.
According to the measuring device of the second aspect defined in this way, the distance between the sensing unit and the constant potential unit of the measuring unit can be made as short as possible. As a result, the potential of the sensitive film that contacts the sensing unit becomes more stable.
In order to make the distance between the sensing unit and the constant potential unit of the measurement unit the shortest, the constant potential unit should be located directly above the sensing unit. As a result, the potential of the sensitive film in contact with the sensing unit is most stable.
In order to secure a larger opening area for the sensing section, a constant potential section is arranged on the array and between adjacent measurement units. This improves the sensitivity.

The third aspect of the present invention is defined as follows. That is, in the measuring device of the first or second aspect, the constant potential part is made of metal wiring.
According to the measuring device of the third aspect defined in this way, the device configuration is simplified by using the metal wiring, and this can be provided at low cost.

The fourth aspect of the present invention is defined as follows. That is, in the measuring device defined in the first or second aspect, the first electric signal from the measuring unit not covered with the constant potential portion and the second electric signal from the measuring unit covered with the constant potential portion. A comparison unit that compares the signal,
And an output unit that outputs the comparison result of the comparison unit.
In the measuring device according to the fourth aspect thus defined, the first electric signal output from the measuring unit covered with the constant potential part is controlled by the potential of the constant potential part. On the other hand, the second electric signal output from the measurement unit that is not covered with the constant potential portion changes according to the gas component contained in the gas to be observed. Therefore, by comparing the first electric signal and the second electric signal, it is possible to observe the change in the concentration of the gas component, particularly the change over time.

The fifth aspect of the present invention is defined as follows.
A sensing unit that changes the depth of the potential well according to the surface potential, a sensitive film that covers the sensing unit, and a detection region that outputs an electric signal according to the depth of the potential well of the sensing unit. An array of measuring units for chemical and physical phenomena
A constant potential part arranged in the vicinity of the array of the measurement unit, wherein the constant potential part is arranged along the arrangement rule of the array of the measurement unit in plan view, and the reference point of the array. A constant potential part in which the reference point of the constant potential part matches,
A method for manufacturing a measuring apparatus for chemical/physical phenomena, comprising:
An array manufacturing step of manufacturing an array of the measurement unit using a manufacturing process of a semiconductor integrated circuit;
Forming the constant potential part on the sensitive film of the array of measuring units.

According to the manufacturing method of the measuring apparatus of the fifth aspect defined in this way, not only the manufacturing of the array of the measuring units but also the manufacturing of the constant potential portion formed on the array can be performed without changing the manufacturing process of the semiconductor integrated circuit. Applicable.
According to the manufacturing method of the fifth aspect defined in this way, the entire apparatus can be manufactured in large quantities and at low cost.
Subsequent to the manufacture of the array of measuring units, the same process equipment can be used to form the potentiostat. Accordingly, it is possible to easily and accurately arrange the constant potential part according to the arrangement rule of the array and match the reference point of the array with the reference point of the constant potential part.

The sixth aspect of the present invention is defined as follows.
A sensing unit that changes the depth of the potential well according to the surface potential, a sensitive film that covers the sensing unit, and a detection region that outputs an electric signal according to the depth of the potential well of the sensing unit. An array of measuring units for chemical and physical phenomena
A constant potential part arranged in the vicinity of the array of the measurement unit, wherein the constant potential part is arranged along the arrangement rule of the array of the measurement unit in plan view, and the reference point of the array. A constant potential part in which the reference point of the constant potential part matches,
A method for manufacturing a measuring apparatus for chemical/physical phenomena, comprising:
An array manufacturing step of manufacturing an array of the measurement unit using a manufacturing process of a semiconductor integrated circuit;
Forming a sensitive film on the array of the measuring unit and the constant potential part.
According to the manufacturing method defined in the sixth aspect thus defined, the constant potential portion is formed simultaneously with the array in the manufacturing process of the semiconductor integrated circuit. Therefore, the manufacturing process is simplified, and a cheaper device can be provided.

The seventh aspect of the present invention is defined as follows.
That is, a sensing unit that changes the depth of the potential well according to the surface potential, a sensitive film that covers the sensing unit, and a detection region that outputs an electric signal according to the depth of the potential well of the sensing unit, An array of measurement units for chemical and physical phenomena comprising:
A constant potential part made of metal wiring arranged close to the array of the measurement unit;
A method for manufacturing a measuring apparatus for chemical/physical phenomena, comprising:
A constant potential part mounting step of mounting a constant potential part made of the metal wiring on the surface of the array of the measurement unit;
The polymeric material forming the sensitive film is supplied in a fluid state to the surface of the array of the measurement unit on which the constant potential part is mounted to cover the surface of the array, and the constant potential is applied on the polymeric material. Sensitive film material supplying step for forming a portion,
A method of manufacturing a measuring device, comprising: a curing step of curing the polymer material.
According to the measuring device of the seventh aspect defined in this way, the device can be manufactured by a simple operation. Therefore, the measuring device can be provided easily and inexpensively.

FIG. 1 is a schematic diagram showing the structure of a basic unit of a chemical/physical phenomenon measurement unit. FIG. 2 is a diagram showing the operation of the measuring unit of FIG. FIG. 3 is a plan view of a measuring device according to a trial example of the present invention. FIG. 4 shows an output result of the measurement apparatus of the trial example shown in FIG. FIG. 5 shows a main part of the measuring device according to the embodiment of the present invention. FIG. 6 shows an output result of the measuring apparatus of the embodiment shown in FIG. FIG. 7 shows changes over time in the output results of the measuring apparatus of the embodiment shown in FIG. FIG. 8A is a sectional view showing the configuration of a measuring apparatus 200 of another embodiment, FIG. 8B is a sectional view showing a measuring apparatus 300 of a modified mode of the measuring apparatus 200, and FIG. ) Indicates a measuring device 400 which is a modification of the measuring device 300.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 3 shows the structure of the measurement apparatus 100 of the trial example. In FIG. 3, reference numeral 101 is an array of Sawada units (measurement units) shown in FIG. . A polyaniline film 103 (about 15 μl) as a sensitive film further covers the entire area of the array 101 on the sensitive film made of a silicon nitride film. It is considered that the carrier density of the conductive polymer such as polyaniline changes depending on the acid or alkali contained in the measurement target, and as a result, the conductivity, the dielectric constant, and the shielding distance change.

In FIG. 3, reference numeral 105 is an electrode made of gold paste, which is applied to the polyaniline film 103 at a position outside the array 101, and a constant potential (standard potential) is applied thereto.
FIG. 4 shows an image obtained 9 minutes after the measurement apparatus 100 was exposed to air (hereinafter referred to as ethanol gas) containing ethanol (concentration 100 ppm). The voltage applied to the electrode 105 is 1.094V. Each pixel of the image shown in FIG. 4 corresponds to each Sawada unit forming the array 101, and the value of the pixel is specified from the electric signal output from the corresponding Sawada unit.

  It can be seen from FIG. 4 that the outputs of the Sawada units of the array 101 have variations. Specifically, the potential decreases as the distance from the electrode 105 increases. This is presumably because the reference potential fluctuates, which hinders highly accurate measurement.

Therefore, the present inventors adopted the mesh electrode 110 shown in FIG. 5 instead of the gold paste 5. The mesh electrode 110 covers the entire area of the polyaniline film 103 and is connected to a constant voltage source (1.473V) at a position outside the array 101.
The mesh electrode 110 is formed by depositing gold on both sides of a polymer mesh filter (MILLIPORE, NY1H4700) having square pores (100 μm×100 μm).
As shown in the enlarged view of FIG. 5, the metal wiring 112 of the mesh electrode 110 is arranged directly above a part of the Sawada units forming the array 101 via the sensitive film (polyaniline film 103). The portion of the polyaniline film 103 covered with the metal wiring 112 is unlikely to react with ethanol gas. Moreover, since the polyaniline film 103 is thin, the output of the Sawada unit facing the metal wiring 112 is controlled by the voltage of the metal wiring 112.

In the example of FIG. 5, the mesh electrode 110 is laminated on the polyaniline film 103 without any particular alignment. In this case, the mesh electrode 110 was placed on the array, and then polyaniline before curing was supplied on the array. At this time, by adjusting the viscosity and specific gravity of the polyaniline before curing, the mesh electrode could be lifted while being entangled with the polyaniline. The polyaniline layer is allowed to stand for a while to have a uniform thickness, and then the polyaniline is cured. This allows the mesh electrode 110 to be mounted parallel to the array and mechanically stable.
Of course, the method of attaching the mesh electrode 103 is not limited to the above. After forming the polyaniline film 103, the mesh electrode 110 can be laminated.

  In order to strictly control the distance between each sensing unit of the Sawada unit facing the pore portion 114 of the mesh electrode 110 and the metal wiring 112 of the mesh electrode, the mesh electrode is used by using a mask technique of a general-purpose integrated circuit process. Molding is preferred.

  The ethanol gas via the pores 114 of the mesh electrode 110 changes the material characteristics due to the change in the carrier density of the sensitive film (polyaniline film) 103. On the other hand, the metal wiring 112 of the mesh electrode 110 exists at a position extremely close to each Sawada unit facing the pore portion 114, and from the viewpoint of each Sawada unit, four metal wirings 112 surrounding the metal wiring 112 are formed. The sum of the distances is almost equal. Therefore, the default potentials of the sensitive film 103 covering each Sawada unit are also substantially equal.

  When such a measuring device is brought into contact with ethanol gas (concentration: 100 ppm), the carrier density of the polyaniline film 103 located in the pore portion 114 changes, the material characteristics change accordingly, and its potential changes. FIG. 6 is an image obtained after 5 minutes. Each pixel of this image corresponds to the output of each Sawada unit. If the measuring device is kept in contact with ethanol gas for a long time, the influencing factors (electrons) due to ethanol gas diffuse in the polyaniline film 103. Therefore, the output of the portion of the mesh electrode 110 covered with the metal wiring 112 is the same as that of the portion not covered (pore portion).

  FIG. 7 shows the change over time in the output of the measuring device shown in FIG. It can be seen that ethanol gas reacts with the polyaniline film through the pores 114, and as a result, the material properties of the polyaniline film change due to the change in carrier density, and the potential changes accordingly. It is noted that after 60 seconds, the influence of the reaction between the ethanol gas and the polyaniline film in the pore portion 114 diffuses to below the metal wiring 112.

In the above, the Sawada unit array can be manufactured by a general-purpose semiconductor integrated circuit process. The sensitive film laminated on the sensing part of the Sawada unit is appropriately selected according to the chemical/physical quantity to be measured.
The present invention is suitable when the object to be measured is insulative, or has conductivity but has a very low conductivity. In particular, the present invention can be suitably used when the measurement target is gas. In this case, as the material for forming the sensitive film, any material can be selected as long as it is a material used for a gas sensor, that is, a conductive material that reacts with a gas component to change the conductivity. In addition to the above-described conductive polymer materials such as polyaniline and polyimide, semiconductor materials such as tin oxide and indium oxide can be used.
The sensitive film is brought into contact with the constant potential part.

FIG. 8A shows another measuring device 200. Elements having the same functions as those in FIG. 1 are designated by the same reference numerals, and the description thereof will be omitted.
In this measuring device 200, a layer of polyaniline is laminated as a sensitive film 103 on the surface of the array 101 of the measuring unit 1. The structure up to this point is the same as the chip (measuring device) of FIGS. 3 and 5.

In this example, the constant potential part 212 is formed right above the sensing part 10 of each measurement unit 1. The constant potential part 212 crosses the position directly above the sensing part 10 of the measurement unit 1 in the direction perpendicular to the paper surface, and also crosses the sensing parts 10 of the measurement units 1 adjacent in the same direction.
A uniform potential is applied from the reference power source 215 to the constant potential portion 212 having such a structure. Therefore, the potentials of the sensitive film that contacts the sensing portion of each measurement unit 1 are made uniform.

The constant potential part 212 of the measuring device 200 can be formed on the sensitive film 103 using a so-called lift-off method.
That is, a resist is laminated on the sensitive film 103. Next, an opening is formed in the laminated resist at a position where the constant potential portion 212 is formed by etching or another known method. This opening is continuous.

Next, a metal material is vapor-deposited as a conductive material. A metal material is vapor-deposited on the sensitive film through the opening of the resist to form the constant potential part 212. Here, it is necessary to select a stable material in the usage environment required for the measuring device. Examples include gold and copper.
Since the openings are continuous, the constant potential portion 212 is a continuous body (one element). Therefore, the potential from the reference power source 215 is evenly distributed there, and the potential of the sensitive film in contact with the sensing portion of each measurement unit is thus kept uniform.

  In the above, the alignment of the measurement unit 1 and the constant potential part 212 is based on a predetermined position of the substrate due to the constraints of the manufacturing apparatus. An array of the measurement units 1 is created based on the predetermined position of the substrate, and the lift-off method is executed to form the constant potential part. That is, in a plan view, a predetermined position on the substrate serves as a reference point for the array of the measurement unit 1 and a reference point for the constant potential section 212.

A modification of the measuring device 200 is shown in FIG. In the measuring device 300 shown in FIG. 8B, the elements having the same functions as those in FIG. 8A are designated by the same reference numerals, and the description thereof will be omitted.
In this measuring device 300, a constant potential portion 312 formed on the sensitive film 103 is arranged between the measuring units 1. By adopting such a configuration, the opening area of the sensing unit 10 in each measurement unit 1 becomes wider than that in the configuration of FIG.
The measuring device 300 is formed in the same procedure as the measuring device 200.

A modification of the measuring device 300 is shown in FIG. In the measuring device 400 shown in FIG. 8C, the same reference numerals are given to the elements having the same operations as those in FIG. 8B, and the description thereof will be omitted.
In this measuring device 400, a constant potential part 412 is arranged between the measuring units 1 on the surface of the array 101 without any sensitive film interposed. An insulating film (SiO 2) is interposed between the constant potential portion 412 and the array 101 in order to ensure the insulating property.
In the measuring apparatus 400, the constant potential part 412 is formed at the same timing as other electrodes (gate electrode etc.) in the semiconductor process of the array. Before forming the constant potential portion 412, it is preferable to stack an insulating layer (SiO ₂ ) at the planned formation position.

In the above, the shape of the constant potential part can be arbitrarily selected by setting the sensitive film in contact with the sensing part of each measuring unit to have a uniform potential over the entire area.
For example, the mesh electrode 110 described above may have openings (pores) arranged regularly. Here, the shape of the opening is not limited to a rectangle, but may be a circle, for example. When the sensitive film has a relatively high conductivity, metal wires arranged in parallel, those arranged at equal intervals, those arranged in an offset comb shape, or the like can be used.

In order to measure the chemical or physical quantity of the measurement target, the constant potential part must not prevent the measurement target from contacting the sensitive film covering the sensing part of the measurement unit. In other words, if the measurement target is capable of contacting the sensitive film that covers the sensing unit of the measurement unit, if the measurement target is a gas, select a material that can permeate the gas so that it does not have an opening. It is also possible to employ a constant potential part in the bulk state.
The material of the sensitive film can be arbitrarily selected according to the measurement target. For example, when a physical phenomenon such as pressure, temperature or magnetic field is to be measured, a piezo material, a pyroelectric material, or a magnetic semiconductor material having a magnetoresistive effect can be applied to the sensitive film.
By modifying the functional group of a conductive polymer such as polyaniline, a sensitive film that reacts with a specific molecule can be prepared.

  The present invention is not limited to the description of the embodiments and examples of the invention. Various modifications are also included in the present invention within the scope that can be easily conceived by those skilled in the art without departing from the spirit of the claims.

1 Measuring unit 100, 200, 300, 400 Measuring device 10 Sensing part 40 Charge amount detecting part 101 Array of measuring units 103 Polyaniline film (sensitive film)
110 mesh electrode 112 metal wiring 114 pore parts 212, 312, 412 constant potential part 215 reference power source

Claims (7)

A sensing unit that changes the depth of the potential well according to the surface potential, a sensitive film that covers the sensing unit, and a detection region that outputs an electric signal according to the depth of the potential well of the sensing unit. An array of measuring units for chemical and physical phenomena
A constant potential part arranged in the vicinity of the array of the measurement unit, wherein the constant potential part is arranged along the arrangement rule of the array of the measurement unit in plan view, and the reference point of the array. A constant potential part in which the reference point of the constant potential part matches,
Measuring device for chemical and physical phenomena equipped with.   The chemical/physical phenomenon measurement device according to claim 1, wherein the constant potential part is disposed on the array of the measurement units. The chemical/physical phenomenon measurement device according to claim 1, wherein the constant potential part is made of metal wiring. A comparison unit that compares a first electric signal from the measurement unit that is not covered with the constant potential unit with a second electric signal from the measurement unit that is covered with the constant potential unit;
The chemical/physical phenomenon measurement device according to claim 1, further comprising: an output unit that outputs a comparison result of the comparison unit . A sensing unit that changes the depth of the potential well according to the surface potential, a sensitive film that covers the sensing unit, and a detection region that outputs an electric signal according to the depth of the potential well of the sensing unit. An array of measuring units for chemical and physical phenomena
A constant potential part arranged in the vicinity of the array of the measurement unit, wherein the constant potential part is arranged along the arrangement rule of the array of the measurement unit in plan view, and the reference point of the array. A constant potential part in which the reference point of the constant potential part matches,
A method for manufacturing a measuring apparatus for chemical/physical phenomena, comprising:
An array manufacturing step of manufacturing an array of the measurement unit using a manufacturing process of a semiconductor integrated circuit;
Forming the constant potential part on the sensitive film of the array of measuring units. A sensing unit that changes the depth of the potential well according to the surface potential, a sensitive film that covers the sensing unit, and a detection region that outputs an electric signal according to the depth of the potential well of the sensing unit. An array of measuring units for chemical and physical phenomena
A constant potential part arranged in the vicinity of the array of the measurement unit, wherein the constant potential part is arranged along the arrangement rule of the array of the measurement unit in plan view, and the reference point of the array. A constant potential part in which the reference point of the constant potential part matches,
A method for manufacturing a measuring apparatus for chemical/physical phenomena, comprising:
An array manufacturing step of manufacturing an array of the measurement unit using a manufacturing process of a semiconductor integrated circuit;
Forming a sensitive film on the array of the measuring unit and the constant potential part. A sensing unit that changes the depth of the potential well according to the surface potential, a sensitive film that covers the sensing unit, and a detection region that outputs an electric signal according to the depth of the potential well of the sensing unit. An array of measuring units for chemical and physical phenomena
A constant potential part made of metal wiring arranged close to the array of the measurement unit;
A method for manufacturing a measuring apparatus for chemical/physical phenomena, comprising:
A constant potential part mounting step of mounting a constant potential part made of the metal wiring on the surface of the array of the measurement unit;
The polymeric material forming the sensitive film is supplied in a fluid state to the surface of the array of the measurement unit on which the constant potential part is mounted to cover the surface of the array, and the constant potential is applied on the polymeric material. Sensitive film material supplying step for forming a portion,
A method of manufacturing a measuring device, comprising: a curing step of curing the polymer material.