JPWO2018150294A1 - Display panel, information processing device, and method of manufacturing display panel - Google Patents

Abstract

A novel display panel which is excellent in convenience or reliability can be provided. Alternatively, a novel display device with excellent convenience or reliability can be provided. The display panel includes a first pixel and a second pixel, and the first pixel and the second pixel each include a light-emitting layer, a first conductive film, a second conductive film, A third conductive film. The first conductive film has semi-light transmittance and semi-light reflectivity, and the second conductive film has light reflectivity. The third conductive film has optical transparency. The first conductive film is formed so as to sandwich the third conductive film and the light-emitting layer between the second conductive film and the second conductive film. The distance between the first conductive film and the second conductive film in the first pixel is equal to the distance between the first conductive film and the second conductive film in the second pixel. The first pixel emits light having a spectrum having an emission maximum wavelength in a wavelength range of 630 nm to 670 nm, and the second pixel emits a spectrum having an emission maximum wavelength in a wavelength range of 430 nm to 460 nm.

Description

One embodiment of the present invention relates to a method for manufacturing a display panel, an information processing device, or a display panel.

Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the present invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, more specifically, the technical field of one embodiment of the present invention disclosed in this specification includes a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, a driving method thereof, or a manufacturing method thereof, Can be cited as an example.

With the development of the display technology, the required performance is getting higher every day. Standards that indicate a color gamut that can be reproduced by a certain display include the sRGB standard and the NTSC standard, which have been widely used as indices in the past. Recently, however, BT. The 2020 standard has been proposed.

BT. That can represent almost all object colors. Although it is a 2020 standard, it is difficult to attain the present condition by using a broad emission spectrum emitted from an organic compound as it is. Therefore, an attempt has been made to realize the standard by increasing the color purity by using a cavity structure or the like.

A structure has been proposed in which a display panel is provided with regions having different cavity lengths to cover a wider color gamut (for example, see Patent Document 1).

JP 2006-032327 A

A light emitting element using a microcavity method is advantageous in realizing full color. In particular, in order to achieve wide color reproducibility, it is necessary to obtain an optimum emission spectrum peak wavelength and a sharp spectrum.

However, in the case of a full-color light-emitting element using a microcavity method, it is necessary to adjust the distance between a pair of electrodes for each pixel having different emission colors. The problem is a decrease in purity. Further, increasing the number of masks and the number of steps in adjusting the distance between the pair of electrodes are also problematic.

Therefore, according to one embodiment of the present invention, in a light-emitting device using a microcavity method having a plurality of light-emitting elements that emit light of different wavelengths, an element structure is used in which only light of a desired wavelength is emitted from each light-emitting element. It is an object of the present invention to provide a light emitting device and a lighting device provided with a light emitting element having high color purity and high light extraction efficiency. Another object is to reduce the number of steps and cost.

An object of one embodiment of the present invention is to provide a novel display panel which is excellent in convenience or reliability. Another object is to provide a novel display device which is excellent in convenience or reliability. Another object is to provide a novel input / output device with high convenience or reliability. Another object is to provide a novel information processing device which is excellent in convenience or reliability. Another object is to provide a new display panel, a new display device, a new input / output device, a new information processing device, or a new semiconductor device.

Note that the description of these objects does not disturb the existence of other objects. Note that one embodiment of the present invention does not have to solve all of these problems. It should be noted that issues other than these are obvious from the description of the specification, drawings, claims, etc., and that other issues can be extracted from the description of the description, drawings, claims, etc. It is.

The display panel of one embodiment of the present invention includes a first pixel and a second pixel. Each of the first pixel and the second pixel includes a light-emitting layer, a first conductive film, a second conductive film, and a third conductive film. The first conductive film has semi-light transmittance and semi-light reflectivity, and the second conductive film has light reflectivity. Alternatively, the first conductive film has light reflectivity, and the second conductive film has semi-light transmittance and semi-light reflectivity.

The third conductive film has a light-transmitting property, the first conductive film is formed to sandwich the third conductive film with the second conductive film, and the light-emitting layer is formed of the second conductive film. The first pixel is formed so as to be sandwiched between the film and the third conductive film, the first pixel has a first distance between the first conductive film and the second conductive film, Pixel has a second distance between the first conductive film and the second conductive film, the second distance is equal to the first distance, and the first pixel has a maximum emission wavelength. The second pixel emits light having a spectrum having a wavelength in a wavelength region of 630 nm to 670 nm, and the second pixel emits light having a spectrum having a maximum light emission wavelength in a wavelength region of 430 nm to 460 nm.

The above structure further includes a third pixel, the third pixel including a light-emitting layer, a first conductive film, a second conductive film, and a third conductive film. Has a third distance between the first conductive film and the second conductive film, and the third distance is different from the first distance, and the third pixel emits green light. preferable.

In each of the above structures, the semiconductor device preferably further includes a fourth conductive film, and the fourth conductive film preferably has a light-transmitting property. In the first pixel, the fourth conductive film is provided so as to be sandwiched between the light-emitting layer and the third conductive film. In the second pixel, the fourth conductive film is formed in the light-emitting layer. And the third conductive film. In the first pixel, the third conductive film has a first thickness, and in the second pixel, the third conductive film has a second thickness. The fourth conductive film has a third thickness, and in the second pixel, the fourth conductive film has a fourth thickness, and the first thickness is equal to the second thickness; Preferably, the third thickness is equal to the fourth thickness.

In each of the above structures, the third conductive film preferably has a lower etching rate in one etching atmosphere than the fourth conductive film. Alternatively, it is preferable that the third conductive film have a lower etching rate when one solution is used than the fourth conductive film.

The information processing device according to one embodiment of the present invention includes at least one of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, a gaze input device, and a posture detection device. A display panel.

In a method for manufacturing a display panel of one embodiment of the present invention, a step of forming a first conductive film, a step of forming a second conductive film over the first conductive film, and a step of forming over the second conductive film Forming a third conductive film, and a mask having, over the third conductive film, a first region and a second region having a thickness smaller than the thickness of the first region. A forming step, a first step of removing a portion of the first conductive film, the second conductive film, and the third conductive film which do not overlap with the mask; and a mask after the first step. A second step of removing the mask in the second region by retreating, a third step of removing a portion of the third conductive film overlapping the second region after the second step, and a third step of removing the mask. Removing the mask, forming a light-emitting layer above the second conductive film or the third conductive film, Over, characterized in that it comprises a step of forming a fourth conductive film.

In the drawings attached to this specification, components are classified by function, and block diagrams are shown as independent blocks. However, it is difficult to completely separate actual components by function, and one component May relate to more than one function.

In this specification, the terms “source” and “drain” of a transistor are interchanged depending on the polarity of the transistor and the level of potential applied to each terminal. In general, in an n-channel transistor, a terminal to which a low potential is applied is called a source, and a terminal to which a high potential is applied is called a drain. In a p-channel transistor, a terminal supplied with a low potential is called a drain, and a terminal supplied with a high potential is called a source. In this specification, for the sake of convenience, the connection relation of transistors may be described on the assumption that the source and the drain are fixed. However, the terms of the source and the drain are interchanged according to the above-described potential relation. .

In this specification, a source of a transistor means a source region which is part of a semiconductor film functioning as an active layer, or a source electrode connected to the semiconductor film. Similarly, a drain of a transistor means a drain region that is part of the semiconductor film or a drain electrode connected to the semiconductor film. The gate means a gate electrode.

In this specification, a state in which transistors are connected in series means, for example, a state in which only one of a source and a drain of a first transistor is connected to only one of a source and a drain of a second transistor. I do. The state in which the transistors are connected in parallel means that one of the source and the drain of the first transistor is connected to one of the source and the drain of the second transistor, and the other of the source and the drain of the first transistor is connected to the other. This means a state in which the second transistor is connected to the other of the source and the drain.

In this specification, a connection means an electrical connection, and corresponds to a state in which a current, a voltage, or a potential can be supplied or transmitted. Therefore, a connected state does not necessarily mean a directly connected state, but a wiring, a resistor, a diode, a transistor, or the like so that current, voltage, or potential can be supplied or transmitted. A state where the connection is indirectly via a circuit element is also included in the category.

In this specification, even when independent components are connected on a circuit diagram, actually, for example, when one part of a wiring functions as an electrode, one conductive film In some cases. In this specification, the term “connection” includes the case where one conductive film also has a function of a plurality of components.

In this specification, one of a first electrode and a second electrode of a transistor indicates a source electrode, and the other indicates a drain electrode.

According to one embodiment of the present invention, a novel display panel with excellent convenience or reliability can be provided. Alternatively, a novel display device with excellent convenience or reliability can be provided. Alternatively, a novel input / output device with high convenience or reliability can be provided. Alternatively, a novel information processing device with excellent convenience or reliability can be provided. Alternatively, a new display panel, a new display device, a new input / output device, a new information processing device, or a new semiconductor device can be provided.

Note that the description of these effects does not disturb the existence of other effects. Note that one embodiment of the present invention does not necessarily need to have all of these effects. It should be noted that the effects other than these are naturally obvious from the description of the specification, drawings, claims, etc., and it is possible to extract the other effects from the descriptions of the specification, drawings, claims, etc. It is.

5A and 5B are a top view and a cross-sectional view illustrating pixels and subpixels of a display panel according to an embodiment. 5A and 5B are a top view and a cross-sectional view illustrating pixels and subpixels of a display panel according to an embodiment. 7A to 7C are a top view and schematic views illustrating a structure of a display panel according to an embodiment. FIG. 3 is a cross-sectional view illustrating a structure of a display panel according to an embodiment. FIG. 3 is a cross-sectional view illustrating a structure of a display panel according to an embodiment. FIG. 4 is a top view illustrating a structure of a pixel of a display panel according to an embodiment. FIG. 3 is a circuit diagram illustrating a pixel circuit of a display panel according to an embodiment. FIG. 3 is a cross-sectional view illustrating a structure of a display panel according to an embodiment. FIG. 3 is a cross-sectional view illustrating a structure of a display panel according to an embodiment. FIG. 3 is a cross-sectional view illustrating a structure of a display panel according to an embodiment. 4A to 4C are cross-sectional views illustrating a method for manufacturing a display panel according to an embodiment. 4A to 4C are cross-sectional views illustrating a method for manufacturing a display panel according to an embodiment. 5A and 5B illustrate a multi-tone mask according to an embodiment. 4A to 4C are cross-sectional views illustrating a method for manufacturing a display panel according to an embodiment. 5A and 5B are a top view and a cross-sectional view illustrating pixels and subpixels of a display panel according to an embodiment. 7A and 7B are a schematic view and a cross-sectional view illustrating a structure of a display panel according to an embodiment. FIG. 2 is a block diagram illustrating a structure of a display device according to an embodiment. 4A and 4B are a block diagram illustrating a structure of a display panel according to an embodiment and a diagram illustrating an appearance thereof. FIG. 2 is a block diagram illustrating a structure of an input / output device according to an embodiment. 5A and 5B are a top view and a projection view illustrating a structure of an input / output device according to an embodiment. 5A and 5B illustrate a structure of an input / output device according to an embodiment. FIG. 2 is a block diagram illustrating a structure of a display panel of a display device according to an embodiment. FIG. 2 is a block diagram illustrating a structure of a display panel of a display device according to an embodiment. FIG. 4 is a top view illustrating a structure of a pixel of a display panel according to an embodiment. FIG. 3 is a cross-sectional view illustrating a structure of a display panel according to an embodiment. FIG. 3 is a cross-sectional view illustrating a structure of a display panel according to an embodiment. FIG. 4 is a top view illustrating a structure of a pixel of a display panel according to an embodiment. FIG. 3 is a circuit diagram illustrating a pixel circuit of a display panel according to an embodiment. FIG. 4 is a schematic diagram illustrating a shape of a light-reflecting film of a display panel according to an embodiment. 4A and 4B are a block diagram and a schematic diagram illustrating a configuration of an information processing device according to an embodiment. FIG. 4 is a flowchart illustrating a method for driving the information processing device according to the embodiment. 7A and 7B are a flowchart and a timing chart illustrating a method for driving an information processing device according to an embodiment. FIG. 2 illustrates a structure of an information processing device according to an embodiment. FIG. 2 illustrates a structure of an information processing device according to an embodiment. FIG. 4 is a diagram illustrating a refractive index according to an example. FIG. 4 is a diagram illustrating a sample and light intensity according to an example.

The display panel of one embodiment of the present invention includes a plurality of pixels. The plurality of pixels include a self-luminous display element that displays colors having different hues. The plurality of pixels include a micro optical resonator (also referred to as a micro cavity).

Thus, a light-emitting device and a lighting device each including a light-emitting element with high color purity can be provided. Furthermore, the number of steps and the cost can be reduced by making the same part of the manufacturing process of the microcavity structure for two pixels having different hues.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not construed as being limited to the description of the embodiments below. Note that in the structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
In this embodiment, a structure of a display panel of one embodiment of the present invention is described.

1A and 1B are a top view and a cross-sectional view illustrating a pixel and a sub-pixel of a display panel of one embodiment of the present invention, respectively. FIG. 1A is a top view of a pixel of a display panel of one embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along a cutting line Y3-Y4 in FIG.

FIGS. 2A and 2B are a top view and a cross-sectional view illustrating a pixel and a sub-pixel of a display panel of one embodiment of the present invention, respectively. FIG. 2A is a top view of a pixel of a display panel of one embodiment of the present invention, and FIG. 2B is a cross-sectional view taken along a cutting line Y3-Y4 in FIG.

FIG. 3 illustrates a structure of a display panel of one embodiment of the present invention. FIG. 3A is a top view of the display panel, and FIG. 3B is a top view illustrating part of pixels of the display panel illustrated in FIG. 3A. FIG. 3C is a schematic diagram illustrating a cross-sectional structure of the display panel illustrated in FIG.

FIG. 6 is a top view illustrating a structure of a pixel of the display panel illustrated in FIG.

4 and 5 are cross-sectional views illustrating the configuration of the display panel. 4A is a cross-sectional view taken along a cutting line X1-X2, a cutting line X3-X4 in FIG. 3A, and a cutting line X5-X6 in FIG. 6, and FIG. 4B and FIG. 4A and 4B each illustrate a part of FIG.

FIG. 5 is a cross-sectional view taken along a cutting line X7-X8 in FIG. 6 and a cutting line X9-X10 in FIG.

FIG. 7 is a circuit diagram illustrating a structure of a pixel circuit included in a display panel of one embodiment of the present invention.

In the present specification, a variable that takes an integer of 1 or more as a value may be used as a sign. For example, (p) including a variable p having an integer value of 1 or more may be used as a part of a code specifying any of the p components at maximum. Further, for example, (m, n) including a variable m and a variable n having an integer value of 1 or more may be used as a part of a code for specifying any of m × n components at the maximum.

<Configuration Example 1 of Display Panel>
The display panel 700 described in this embodiment includes a plurality of pixels. The plurality of pixels have a function of displaying colors having different hues.

By using the plurality of pixels, a hue color that cannot be displayed by each pixel can be displayed by additive color mixture.

When a plurality of pixels capable of displaying colors having different hues are used for color mixture, each pixel can be referred to as a sub-pixel. Also, a plurality of sub-pixels can be referred to as a set of a plurality of sub-pixels.

For example, the pixel 702 (i, j), the pixel 702 (i, j + 1), and the pixel 702 (i, j + 2) are all regarded as sub-pixels, and the set of these is reworded as the pixel 703 (i, k). (See FIG. 1A).

Specifically, the pixel 702 (i, j) for displaying red, the pixel 702 (i, j + 1) for displaying green, and the pixel 702 (i, j + 2) for displaying blue are regarded as sub-pixels, and are set as a set. , 703 (i, k).

Further, for example, a sub-pixel that displays white or the like can be used as a pixel in addition to the above set.

<Structural example 1 of display element>
The pixel 702 (i, j) has a display element 550 (i, j) (see FIG. 1B). The display element 550 (i, j) has a function of emitting light. For example, an organic EL element can be used for the display element 550 (i, j). The display element 550 (i, j) includes a light-emitting layer 553, an electrode 551 (i, j), and an electrode 552. For example, the electrode 551 (i, j) uses a material having light transmittance, and the electrode 552 uses a material having light reflectivity. The same applies to the pixel 702 (i, j + 1) and the pixel 702 (i, j + 2). The light-emitting layer 553 is a layer containing a light-emitting material.

As will be described later, the pixel 702 (i, j) includes a red coloring film CF1 (R), the pixel 702 (i, j + 1) includes a green coloring film CF1 (G), and the pixel 702 (i, j). (i, j + 2) includes a blue colored film CF1 (B).

In the display element 550 (i, j), the conductive film 551_1 (i, j) having semi-light transmitting / semi-reflective property and the conductive film 551_1 (i, j) having light-transmitting property are connected to the electrode 551 ( i, j). The same applies to the display element 550 (i, j + 1) and the display element 550 (i, j + 2).

The conductive film 551_1 (i, j) having a light-transmitting property includes a region sandwiched between the conductive film 551_0 (i, j) having a light-transmitting / semi-reflective property and the light-emitting layer 553.

In this case, a stacked film of the light-emitting layer 553 and the light-transmitting conductive film 551_1 (i, j) can be regarded as a light-transmitting film. The same applies to the display element 550 (i, j + 1) and the display element 550 (i, j + 2).

The pixel 702 (i, j), the pixel 702 (i, j + 1), and the pixel 702 (i, j + 2) have a microcavity structure. The micro-optical resonator structure is such that a film having light transmittance and having a predetermined optical distance in a thickness direction is sandwiched between a film having semi-light transmittance and semi-light reflectivity and a light reflection film. Refers to a laminated structure. The light-transmitting conductive film 551_1 (i, j) may have a stacked structure of two or more kinds having different light transmittances.

FIG. 1B shows red light R01 and R02, green light G01 and G02, and blue light B01 and B02. Any light is emitted from the light emitting layer 553. Also, d0 and d1 are shown. Both d0 and d1 are distances between the conductive film 551_0 (i, j) and the electrode 552 along the thickness direction of the conductive film 551_0.

The light R02, the light G02, and the light B02 are reflected at an interface between the conductive film 551_0 (i, j) having semi-light transmitting / semi-reflective properties and the conductive film 551_1 (i, j) having light transmitting properties. . Light R02, light G02, and light B02 are reflected at the interface between the light emitting layer 553 and the electrode 552 having light reflectivity.

In the pixel 702 (i, j), the light R01 and the light R02 interfere and strengthen each other. In the pixel 702 (i, j + 1), the light G01 and the light G02 interfere and strengthen each other. In the pixel 702 (i, j + 2), the light B01 and the light B02 interfere and strengthen each other.

In the display panel 700 of one embodiment of the present invention, the pixel 702 (i, j) and the pixel 702 (i, j + 2) have a distance d0. The distance d0 at the pixel 702 (i, j) is different from the distance d1 at the pixel 702 (i, j + 1). In other words, the distance between the electrode 552 in the pixel 702 (i, j) and the conductive film 551_0 (i, j) and the distance between the electrode 552 in the pixel 702 (i, j + 2) and the conductive film 551_0 (i, j + 2) Are approximately equal. The distance between the electrode 552 and the conductive film 551_0 (i, j) in the pixel 702 (i, j) and the distance between the electrode 552 and the conductive film 551_0 (i, j + 1) in the pixel 702 (i, j + 1) are as follows. ,different. Note that in this specification and the like, that two distances are substantially equal indicates that the ratio of one of the two distances to the other is 0.8 or more and 1.2 or less.

If the refractive index of the conductive film 551_1 (i, j) having light transmittance has wavelength dependency, and the red light and the blue light have different refractive indices, the distance in the pixel 702 (i, j). The optical distance is different between d0 and the distance d0 at the pixel 702 (i, j + 2). In the display panel 700, an effective minute optical resonator structure is formed by determining the distance d0 in consideration of the refractive index.

Note that a film having semi-light transmitting and semi-light reflecting properties has a function of transmitting a part of visible light and a function of reflecting another part. Specifically, a metal film thin enough to transmit light can be used as a film having semi-light transmission and semi-light reflection.

Thus, the micro optical resonator structure can be provided in the pixel 702 (i, j), the pixel 702 (i, j + 1), and the pixel 702 (i, j + 2). The pixel 702 (i, j) can enhance the color purity of red and enhance the display. Further, the pixel 702 (i, j + 1) can increase the color purity of green and make the display vivid. Further, the pixel 702 (i, j + 2) can enhance the color purity of blue and make the display vivid.

Alternatively, light of a predetermined wavelength can be extracted more efficiently than other light. Alternatively, light with a narrow half width of the spectrum can be extracted. Alternatively, brightly colored light can be extracted.

Further, a stacked structure in which a conductive film 551_2 (i, j) is provided in contact with the conductive film 551_1 (i, j) as in the display panel 700_1 may be employed (see FIG. 2B). Here, it is preferable that the conductive film 551_1 (i, j) and the conductive film 551_2 (i, j) be different materials. Note that the conductive film 551_1 (i, j) and the conductive film 551_2 (i, j) may be formed of the same material. The same applies to the conductive film 551_1 (i, j + 2).

In the display element 550 (i, j), the conductive film 551_0 (i, j) having semi-light transmitting / semi-reflective property, the conductive film 551_1 (i, j) having light-transmitting property, and The provided conductive film 551_2 (i, j) can be used for the electrode 551 (i, j). The same applies to the display element 550 (i, j + 2).

The conductive film 551_1 (i, j) having a light-transmitting property includes a region sandwiched between the conductive film 551_0 (i, j) having a light-transmitting / semi-reflective property and the light-emitting layer 553. The light-transmitting conductive film 551_2 (i, j) includes a region interposed between the light-transmitting conductive film 551_1 (i, j) and the light-emitting layer 553. In this case, a stacked film of the light-emitting layer 553, the light-transmitting conductive film 551_1 (i, j), and the light-transmitting conductive film 551_2 (i, j) can be regarded as a light-transmitting film. . The same applies to the display element 550 (i, j + 2).

In the display element 550 (i, j + 1), the conductive film 551_0 (i, j + 1) having translucency and translucency and the conductive film 551_1 (i, j + 1) having translucency are connected to the electrode 551 ( i, j + 1).

The conductive film 551_1 (i, j + 1) having a light-transmitting property includes a region sandwiched between the conductive film 551_0 (i, j + 1) having a semi-light transmitting property and a semi-light reflecting property and the light-emitting layer 553. In this case, a stacked film of the light-emitting layer 553 and the conductive film 551_1 (i, j + 1) having light transmittance can be regarded as a light-transmitting film.

Although described in Embodiment 2, in the case where the electrode 551 (i, j) has a stacked structure like the display panel 700_1, it is effective for simplifying a manufacturing process of the electrode 551 (i, j).

<Structural Example 1 of Pixel>
For example, a light-emitting layer that emits white light can be used for the light-emitting layer 553 (see FIG. 2B).

The pixel 702 (i, j) includes a red colored film CF1 (R) and has a function of emitting red light (see FIG. 2B). The pixel 702 (i, j + 1) includes a green colored film CF1 (G) and has a function of emitting green light. The pixel 702 (i, j + 2) includes the blue colored film CF1 (B) and has a function of emitting blue light. The sub-pixels are separated from each other by an insulating film 528. The light-emitting layer 553 has a region provided in the pixel 702 (i, j), a region provided in the pixel 702 (i, j + 1), and a region provided in the pixel 702 (i, j + 2).

In the pixel 702 (i, j), the light-emitting layer 553 can have a thickness of, for example, 188 nm. As the conductive film 551_1 (i, j), an oxide conductive film having a thickness of, for example, 50 nm and containing indium, tin, and silicon can be used. For the conductive film 551_2 (i, j), an oxide conductive film having a thickness of 62 nm and containing indium and zinc, for example, can be used. The same applies to the pixel 702 (i, j + 2).

In the pixel 702 (i, j + 1), the light-emitting layer 553 can have a thickness of, for example, 188 nm. For the conductive film 551_1 (i, j + 1), an oxide conductive film having a thickness of, for example, 50 nm and containing indium, tin, and silicon can be used.

With the configuration of each sub-pixel having the above film thickness, the pixel 702 (i, j) increases the color purity of red, the pixel 702 (i, j + 1) increases the color purity of green, and the pixel 702 (i, j + 1) displays blue. Can be enhanced, and any display can be made vivid.

<Structure example 2 of display panel>
A display panel 700 described in this embodiment includes a pixel 702 (i, j) (see FIG. 3A or FIG. 17).

<Structural Example 2 of Pixel>
The pixel 702 (i, j) includes the display element 550 (i, j) (see FIG. 3C). The pixel 702 (i, j) includes a pixel circuit 530 (i, j).

The pixel circuit 530 (i, j) includes a conductive film. The conductive film may include a region that transmits visible light. For example, a conductive film that transmits visible light can be used for the conductive films 512A, 512B, and 504 (see FIG. 4A).

Note that each of the conductive films 512A, 512B, and 504 has a function of an electrode of the transistor M. Alternatively, each of the conductive films 512A, 512B, and 504 has a function of a wiring of the pixel circuit 530 (i, j) (see FIG. 4A or 4B).

<Structural example 2 of display element>
The display element 550 (i, j) is electrically connected to the pixel circuit 530 (i, j) (see FIG. 3C). For example, the display element 550 (i, j) is electrically connected to the pixel circuit 530 (i, j) at the connection portion 522A. Specifically, the electrode 551 (i, j) of the display element 550 (i, j) is electrically connected to the conductive film 512A of the transistor M.

The display element 550 (i, j) has a function of emitting visible light toward the substrate 770 (see FIGS. 3C and 4A). At this time, a coloring film CF1 (R) can be provided in a path from which the light L1 is emitted. The same applies to the display element 550 (i, j + 1) and the display element 550 (i, j + 2).

<Structural Example 1 of Pixel Circuit>
The pixel circuit 530 (i, j) includes a transistor M. The transistor M includes a semiconductor film 508, a conductive film 512A, a conductive film 512B, and a conductive film 504 functioning as a gate electrode.

The semiconductor film 508 includes a region 508A electrically connected to the conductive film 512A and a region 508B electrically connected to the conductive film 512B (see FIG. 4B).

The semiconductor film 508 includes a region 508C which overlaps with the conductive film 504 functioning as a gate electrode between the region 508A and the region 508B.

The pixel circuit 530 (i, j) has a function of driving the display element 550 (i, j) (see FIG. 7).

A switch, a transistor, a diode, a resistor, an inductor, a capacitor, or the like can be used for the pixel circuit 530 (i, j).

For example, one or more transistors can be used for a switch. Alternatively, a plurality of transistors connected in parallel, a plurality of transistors connected in series, and a plurality of transistors connected in combination of series and parallel can be used for one switch.

For example, the pixel circuit 530 (i, j) is electrically connected to the signal line S2 (j), the scanning line G2 (i), and the conductive film ANO (see FIG. 7). Note that the conductive film 512B is electrically connected to the conductive film ANO at the connection portion 522B (see FIGS. 4A and 7).

The pixel circuit 530 (i, j) includes a switch SW2, a transistor M, and a capacitor C21 (see FIG. 7).

For example, a transistor including a gate electrode electrically connected to the scan line G2 (i) and a first electrode electrically connected to the signal line S2 (j) can be used for the switch SW2. .

The transistor M has a gate electrode electrically connected to the second electrode of the transistor used for the switch SW2, and a first electrode electrically connected to the conductive film ANO.

Note that a transistor including a conductive film provided so that a semiconductor film is interposed between the gate electrode and the semiconductor film can be used as the transistor M. For example, a conductive film which is electrically connected to a wiring which can supply the same potential as the gate electrode of the transistor M can be used for the conductive film.

The capacitor C21 has a first electrode electrically connected to a second electrode of the transistor used for the switch SW2, and a second electrode electrically connected to the first electrode of the transistor M. .

Further, the electrode 551 (i, j) of the display element 550 (i, j) is electrically connected to the second electrode of the transistor M, and the electrode 552 of the display element 550 (i, j) is electrically connected to the conductive film VCOM2. Connection. Thus, the display element 550 (i, j) can be driven.

<Configuration Example 3 of Pixel>
The pixel 702 (i, j) includes an insulating film 573 (see FIG. 5). For example, a single film or a stacked film in which a plurality of films are stacked can be used for the insulating film 573. Specifically, a stacked film in which the insulating films 573A and 573B are stacked can be used for the insulating film 573.

The pixel 702 (i, j) includes an insulating film 518. Note that the insulating film 573 includes, for example, a region which is in contact with the insulating film 518 outside the display region 231.

The display element 550 (i, j) includes a region between the insulating films 573 and 518.

The display element 550 (i, j) includes an electrode 551 (i, j), a light-emitting layer 553, and an electrode 552. The light-emitting layer 553 includes a region interposed between the electrode 551 (i, j) and the electrode 552. The light-emitting layer 553 includes an organic compound.

Thus, diffusion of impurities into the display element can be suppressed. As a result, a novel display device with excellent convenience or reliability can be provided.

<Display Panel Configuration Example 3>
Further, the display panel 700 described in this embodiment includes a display region 231 (see FIG. 17).

<Configuration example of display area>
The display region 231 includes a group of a plurality of pixels 702 (i, 1) to 702 (i, n), another group of a plurality of pixels 702 (1, j) to pixel 702 (m, j), It has a line G2 (i) and a signal line S2 (j) (see FIG. 17). Further, the semiconductor device includes the conductive film VCOM2 and the conductive film ANO. Note that i is an integer of 1 or more and m or less, j is an integer of 1 or more and n or less, and m and n are integers of 1 or more.

The group of the plurality of pixels 702 (i, 1) to 702 (i, n) includes the pixel 702 (i, j), and the group of the plurality of pixels 702 (i, 1) to 702 (i, n) includes They are arranged in the row direction (the direction indicated by arrow R1 in the figure).

The other group of the plurality of pixels 702 (1, j) to 702 (m, j) includes the pixel 702 (i, j), and the other group of the plurality of pixels 702 (1, j) to 702 (m , J) are arranged in the column direction intersecting the row direction (the direction indicated by arrow C1 in the figure).

The scanning line G2 (i) is electrically connected to a group of a plurality of pixels 702 (i, 1) to 702 (i, n) arranged in the row direction.

The signal line S2 (j) is electrically connected to another group of the plurality of pixels 702 (1, j) to 702 (m, j) arranged in the column direction.

<Display Panel Configuration Example 4>
Further, the display panel 700 described in this embodiment can include a driver circuit GD or a driver circuit SD (see FIGS. 3A and 17).

<Drive circuit GD>
The drive circuit GD has a function of supplying a selection signal based on control information.

For example, a function of supplying a selection signal to one scanning line at a frequency of 30 Hz or more, preferably 60 Hz or more, based on control information is provided. Thereby, a moving image can be displayed smoothly.

For example, a function of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute based on control information is provided. Thus, a still image can be displayed with flicker suppressed.

Further, the display panel can include a plurality of driver circuits. For example, the display panel 700B includes a driver circuit GDA and a driver circuit GDB (see FIG. 18).

Further, for example, in the case where a plurality of driving circuits are provided, the frequency at which the driving circuit GDA supplies the selection signal can be different from the frequency at which the driving circuit GDB supplies the selection signal. Specifically, the selection signal can be supplied to another area for displaying the moving image at a higher frequency than the frequency for supplying the selection signal to one area for displaying the still image. Accordingly, a still image can be displayed in one area in a state where flicker is suppressed, and a moving image can be smoothly displayed in another area.

<Drive circuit SD>
The drive circuit SD has a drive circuit SD1 and a drive circuit SD2. The driving circuit SD1 has a function of supplying an image signal based on the information V11, and the driving circuit SD2 has a function of supplying an image signal based on the information V12 (see FIG. 22 or 23).

The driving circuit SD1 or the driving circuit SD2 has a function of generating an image signal and a function of supplying the image signal to a pixel circuit electrically connected to one display element. Specifically, it has a function of generating a signal whose polarity is inverted. Thereby, for example, a liquid crystal display element can be driven.

For example, various sequential circuits such as a shift register can be used for the drive circuit SD.

For example, an integrated circuit in which the driver circuits SD1 and SD2 are integrated can be used for the driver circuit SD. Specifically, an integrated circuit formed over a silicon substrate can be used for the drive circuit SD.

For example, an integrated circuit can be mounted on a terminal by using a COG (Chip on glass) method or a COF (Chip on Film) method. Specifically, an integrated circuit can be mounted on a terminal using an anisotropic conductive film.

<Display Panel Configuration Example 5>
The display panel 700 described in this embodiment includes a terminal 519B, a substrate 570, a substrate 770, a bonding layer 505, a functional film 770P, and the like (see FIG. 4A or FIG. 5).

<Terminal 519B>
The terminal 519B includes, for example, a conductive film 511B. The terminal 519B can be electrically connected to, for example, the signal line S2 (j).

<Substrate 570, substrate 770>
The substrate 770 includes a region overlapping with the substrate 570. The substrate 770 includes a region where the display element 550 (i, j) is sandwiched between the substrate 770 and the substrate 570.

In a region of the substrate 770 which overlaps with the display element 550 (i, j), for example, a material in which birefringence is suppressed can be used.

<Joining layer 505>
The bonding layer 505 has a function of bonding the substrate 770 and the substrate 570.

<Functional film 770P etc.>
The functional film 770P includes a region overlapping with the display element 550 (i, j).

<Example of component>
The display panel 700 includes the substrate 570, the substrate 770, or the bonding layer 505.

The display panel 700 includes the insulating films 521A, 521B, 528, 516, 503, and 506.

The display panel 700 includes the signal line S2 (j), the scanning line G2 (i), or the conductive film ANO.

Further, the display panel 700 includes a terminal 519B or a conductive film 511B.

Further, the display panel 700 includes the pixel circuit 530 (i, j) or the transistor M.

The display panel 700 includes a display element 550 (i, j), an electrode 551 (i, j), an electrode 552, or a light-emitting layer 553 (j).

Further, the display panel 700 includes an insulating film 573.

Further, the display panel 700 includes a driving circuit GD or a driving circuit SD.

<Substrate 570>
A material having heat resistance high enough to withstand heat treatment in the manufacturing process can be used for the substrate 570.

For example, a material having a thickness of 0.7 mm or less and a thickness of 0.1 mm or more can be used for the substrate 570. Specifically, a material polished or etched to a thickness of about 0.1 mm can be used.

For example, the area of the sixth generation (1500 mm × 1850 mm), the seventh generation (1870 mm × 2200 mm), the eighth generation (2200 mm × 2400 mm), the ninth generation (2400 mm × 2800 mm), the tenth generation (2950 mm × 3400 mm), etc. A large glass substrate can be used for the substrate 570. Thus, a large display device can be manufactured.

An organic material, an inorganic material, a composite material of an organic material and an inorganic material, or the like can be used for the substrate 570. For example, an inorganic material such as glass, ceramics, or metal can be used for the substrate 570.

Specifically, non-alkali glass, soda-lime glass, potash glass, crystal glass, aluminosilicate glass, tempered glass, chemically tempered glass, quartz, sapphire, or the like can be used for the substrate 570. Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like can be used for the substrate 570. For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like can be used for the substrate 570. Stainless steel or aluminum or the like can be used for the substrate 570.

For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used as the substrate 570. Thus, a semiconductor element can be formed over the substrate 570.

For example, an organic material such as a resin, a resin film, or plastic can be used for the substrate 570. Specifically, a resin film or a resin plate of polyester, polyolefin, polyamide, polyimide, polycarbonate, acrylic resin, or the like can be used for the substrate 570.

For example, a metal plate, a thin glass plate, or a composite material in which a film of an inorganic material or the like is attached to a resin film or the like can be used for the substrate 570. For example, a composite material in which a fibrous or particulate metal, glass, or an inorganic material is dispersed in a resin film can be used for the substrate 570. For example, a composite material in which a fibrous or particulate resin or an organic material is dispersed in an inorganic material can be used for the substrate 570.

Alternatively, a single-layer material or a stacked-layer material can be used for the substrate 570. For example, a material in which a base material and an insulating film for preventing diffusion of impurities contained in the base material or the like are stacked can be used for the substrate 570. Specifically, a material in which one or more films selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or the like which prevents diffusion of glass and impurities contained in the glass is used for the substrate 570 Can be. Alternatively, a material in which a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like which prevents diffusion of a resin and an impurity penetrating the resin can be used for the substrate 570.

Specifically, a resin film such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or an acrylic resin, a resin plate, a laminated material, or the like can be used for the substrate 570.

Specifically, a material containing a resin having a siloxane bond such as polyester, polyolefin, polyamide (eg, nylon or aramid), polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin, or silicone can be used for the substrate 570.

Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone (PES), acrylic resin, or the like can be used for the substrate 570. Alternatively, a cycloolefin polymer (COP), a cycloolefin copolymer (COC), or the like can be used.

Alternatively, paper, wood, or the like can be used for the substrate 570.

For example, a flexible substrate can be used for the substrate 570.

Note that a method in which a transistor, a capacitor, or the like is directly formed over the substrate can be used. Alternatively, for example, a method in which a transistor, a capacitor, or the like is formed over a substrate for a process which has heat resistance against heat applied during the manufacturing process, and the formed transistor, the capacitor, or the like is transferred to the substrate 570 can be used. Thus, for example, a transistor or a capacitor can be formed over a flexible substrate.

<Substrate 770>
For example, a material that can be used for the substrate 570 can be used for the substrate 770. For example, a material having a light-transmitting property selected from materials which can be used for the substrate 570 can be used for the substrate 770. Alternatively, a material in which an antireflection film of, for example, 1 μm or less is formed on one surface can be used for the substrate 770. Specifically, a stacked film in which three or more dielectric layers, preferably five or more layers, and more preferably 15 or more layers are stacked can be used for the substrate 770. Thereby, the reflectance can be suppressed to 0.5% or less, preferably 0.08% or less.

For example, aluminosilicate glass, tempered glass, chemically strengthened glass, sapphire, or the like can be suitably used for the substrate 770 provided on the side closer to the user of the display panel. This can prevent the display panel from being damaged or damaged during use.

For example, a resin film can be suitably used for the substrate 770. Thereby, weight can be reduced. Alternatively, for example, it is possible to reduce the frequency of occurrence of breakage or the like due to falling.

For example, a material with a thickness of 0.7 mm or less and a thickness of 0.1 mm or more can be used for the substrate 770. Specifically, a substrate polished to reduce the thickness can be used. Thereby, weight can be reduced.

<Insulating film 521A, insulating film 521B>
For example, an insulating inorganic material, an insulating organic material, or an insulating composite material containing an inorganic material and an organic material can be used for the insulating film 521A or 521B.

Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a stacked material in which a plurality of layers selected from the above can be used for the insulating film 521A or the insulating film 521B.

For example, a film including a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or a stacked material formed by stacking a plurality of materials selected from the above can be used for the insulating film 521A or the insulating film 521B. Note that the silicon nitride film is a dense film and has an excellent function of suppressing diffusion of impurities.

For example, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, an acrylic resin, or the like, or a stacked material or a composite material of a plurality of resins selected therefrom can be used for the insulating film 521A or the insulating film 521B. Further, it may be formed using a photosensitive material. Accordingly, in the insulating film 521A or 521B, for example, steps caused by various structures which overlap with the insulating film 521A or 521B can be planarized.

Note that polyimide has characteristics superior to other organic materials in characteristics such as thermal stability, insulating properties, toughness, low dielectric constant, low coefficient of thermal expansion, and chemical resistance. Accordingly, polyimide can be particularly preferably used for the insulating film 521A or the insulating film 521B.

For example, a film formed using a photosensitive material can be used for the insulating film 521A or 521B. Specifically, a film formed using photosensitive polyimide, photosensitive acrylic resin, or the like can be used for the insulating film 521A or the insulating film 521B.

For example, a light-transmitting material can be used for the insulating film 521A or 521B. Specifically, silicon nitride can be used for the insulating film 521A or 521B.

<Insulating film 528>
For example, a material that can be used for the insulating film 521A or 521B can be used for the insulating film 528. Specifically, a film containing polyimide can be used for the insulating film 528.

<Insulating film 518>
For example, a material that can be used for the insulating film 521A or 521B can be used for the insulating film 518.

For example, a material having a function of suppressing diffusion of oxygen, hydrogen, water, an alkali metal, an alkaline earth metal, or the like can be used for the insulating film 518. Specifically, a nitride insulating film can be used for the insulating film 518. For example, silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, or the like can be used for the insulating film 518. Thus, diffusion of impurities into the semiconductor film of the transistor can be suppressed. For example, diffusion of oxygen from the oxide semiconductor film used for the semiconductor film of the transistor to the outside of the transistor can be suppressed. Alternatively, diffusion of hydrogen, water, or the like from the outside of the transistor to the oxide semiconductor film can be suppressed.

For example, a material having a function of supplying hydrogen or nitrogen can be used for the insulating film 518. Thus, hydrogen or nitrogen can be supplied to the film in contact with the insulating film 518. For example, the insulating film 518 can be formed in contact with the oxide semiconductor film and hydrogen or nitrogen can be supplied to the oxide semiconductor film. Alternatively, conductivity can be given to the oxide semiconductor film. Alternatively, the oxide semiconductor film can be used for the second gate electrode.

<Insulating film 516>
For example, a material that can be used for the insulating film 521A or 521B can be used for the insulating film 516. Specifically, a stacked film in which films with different manufacturing methods are stacked can be used for the insulating film 516.

For example, a first film containing silicon oxide or silicon oxynitride having a thickness of 5 nm to 150 nm, preferably 5 nm to 50 nm, and a silicon oxide film having a thickness of 30 nm to 500 nm, preferably 50 nm to 400 nm are used. Alternatively, a stacked film in which a second film containing silicon oxynitride or the like is stacked can be used for the insulating film 516.

Specifically, a film having a spin density of 3 × 10 ¹⁷ spins / cm ³ or less of a signal appearing at g = 2.001 derived from silicon dangling bonds and observable by ESR measurement is referred to as a first film. Is preferably used. Accordingly, for example, an oxide semiconductor film used as a semiconductor film of a transistor can be protected from damage due to formation of an insulating film. Alternatively, oxygen caught in defects of silicon can be reduced. Alternatively, oxygen permeation or transfer can be facilitated.

For example, the spin density of a signal appearing at g = 2.001 derived from a dangling bond of silicon, which can be observed by ESR measurement, is less than 1.5 × 10 ¹⁸ spins / cm ³ , and furthermore, 1 × 10 ¹⁸ It is preferable that a material having spins / cm ³ or less be used for the second film.

<Insulating film 503>
For example, a material that can be used for the insulating film 521A or 521B can be used for the insulating film 503. Specifically, silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, silicon oxide, silicon oxynitride, or the like can be used for the insulating film 503. Thus, for example, diffusion of impurities into the semiconductor film of the transistor can be suppressed.

<Insulating film 506>
For example, a material that can be used for the insulating film 521A or 521B can be used for the insulating film 506. Specifically, a stacked film in which a first film having a function of suppressing oxygen transmission and a second film having a function of supplying oxygen can be used as the insulating film 506. Thus, for example, oxygen can be diffused into an oxide semiconductor film used for a semiconductor film of the transistor.

Specifically, silicon oxide film, silicon oxynitride film, silicon nitride oxide film, silicon nitride film, aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film A film including a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film can be used for the insulating film 506.

For example, a film formed in an oxygen atmosphere can be used as the second film. Alternatively, a film into which oxygen is introduced after film formation can be used for the second film. Specifically, oxygen can be introduced after film formation by an ion implantation method, an ion doping method, a plasma immersion ion implantation method, plasma treatment, or the like.

<Insulating film 573>
For example, a material that can be used for the insulating film 521A or the insulating film 521B can be used for the insulating film 573. Specifically, a stacked film in which the insulating films 573A and 573B are stacked can be used for the insulating film 573.

For example, an oxide or a nitride can be used for the insulating film 573. Specifically, aluminum oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide, silicon nitride, aluminum nitride, or the like can be used for the insulating film 573.

Specifically, it is less than 1 × 10 ⁻² g / (m ² · day), preferably 5 × 10 ⁻³ g / (m ² · day) or less, and more preferably 1 × 10 ⁻⁴ g / (m ^2). .Day) or less, preferably 1 × 10 ⁻⁵ g / (m ² · day) or less, preferably 1 × 10 ⁻⁶ g / (m ² · day) or less. Used for

For example, a film that can be formed by a sputtering method can be used for the insulating film 573B. Further, a film which can be formed by an atomic layer deposition method (ALD method) can be used for the insulating film 573A. Thus, for example, a region with low density generated in an insulating film formed by a sputtering method can be covered with a dense insulating film formed by an atomic layer deposition method. Alternatively, a region where impurities generated in an insulating film formed using a sputtering method is easily diffused can be covered with a film formed using an atomic layer deposition method and in which impurities are hardly diffused. Alternatively, diffusion of impurities from the outside to the display element can be suppressed.

Specifically, a film containing aluminum oxide with a thickness of 50 nm to 1000 nm, preferably 100 nm to 300 nm can be used for the insulating film 573B. Further, a film containing aluminum oxide with a thickness of 1 nm to 100 nm, preferably 5 nm to 50 nm can be used for the insulating film 573A.

<Wiring, terminal, conductive film>
A material having conductivity can be used for the wiring and the like. Specifically, a material having conductivity can be used for the signal line S2 (j), the scanning line G2 (i), the conductive film ANO, the terminal 519B, the conductive film 511B, or the like.

For example, an inorganic conductive material, an organic conductive material, a metal, a conductive ceramic, or the like can be used for the wiring and the like.

Specifically, a metal element selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, or manganese can be used for the wiring and the like. . Alternatively, an alloy containing the above-described metal element can be used for a wiring or the like. In particular, an alloy of copper and manganese is suitable for fine processing using a wet etching method.

Specifically, a two-layer structure in which a titanium film is stacked over an aluminum film, a two-layer structure in which a titanium film is stacked over a titanium nitride film, a two-layer structure in which a tungsten film is stacked over a titanium nitride film, a tantalum nitride film, or A two-layer structure in which a tungsten film is stacked over a tungsten nitride film, a titanium film, a three-layer structure in which an aluminum film is stacked over the titanium film, and a titanium film is further formed thereon can be used for wiring or the like. .

Specifically, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used for the wiring and the like.

Specifically, a film containing graphene or graphite can be used for a wiring or the like.

For example, a film including graphene oxide is formed, and the film including graphene oxide is reduced; thus, a film including graphene can be formed. Examples of the method of reduction include a method of applying heat and a method of using a reducing agent.

For example, a film including metal nanowires can be used for wiring or the like. Specifically, a nanowire containing silver can be used.

Specifically, a conductive polymer can be used for a wiring or the like.

Note that, for example, the terminal 519B and the flexible printed circuit board FPC1 can be electrically connected using the conductive material ACF1. Specifically, the terminal 519B and the flexible printed circuit board FPC1 can be electrically connected using the conductive material CP.

<Functional film 770P>
For example, an antireflection film, a polarizing film, a retardation film, or the like can be used for the functional film 770P.

Specifically, a circularly polarizing film can be used for the functional film 770P.

In addition, antistatic film that suppresses adhesion of dust, water-repellent film that makes dirt less likely to adhere, antireflection film (anti-reflection film), non-glossy treatment film (anti-glare film), scratches caused by use A hard coat film or the like that suppresses the above can be used for the functional film 770P.

<Display element 550 (i, j)>
For example, a display element having a function of emitting light can be used for the display element 550 (i, j). Specifically, an organic electroluminescence element, an inorganic electroluminescence element, a light emitting diode, a QDLED (Quantum Dot LED), or the like can be used for the display element 550 (i, j).

For example, a light-emitting organic compound can be used for the light-emitting layer 553 (j).

For example, quantum dots can be used for the light-emitting layer 553 (j). Thereby, light of a bright color with a narrow half-value width can be emitted.

<Light-emitting layer>
For example, a layered material or the like stacked to emit white light can be used for the light-emitting layer 553 (j).

For example, a band-shaped laminated material long in the column direction along the signal line S2 (j) can be used for the light-emitting layer 553 (j).

For example, a different light emitting layer may be formed for each sub-pixel. At this time, the laminated material that emits red light is applied to the light emitting layer 553 (j), the laminated material that emits green light is applied to the light emitting layer 553 (j + 1), and the blue light is emitted. Can be used for the light emitting layer 553 (j + 2).

At this time, a band-shaped laminated material long in the column direction along the signal line S2 (j) can be used for the light-emitting layer 553 (j), the light-emitting layer 553 (j + 1), and the light-emitting layer 553 (j + 2).

<Electrode 551 (i, j), electrode 552>
For example, a material having a light-transmitting property with respect to visible light, which is selected from materials which can be used for a wiring or the like, can be used for the electrode 551 (i, j).

Specifically, a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like is used for the electrode 551 (i, j). Can be used. Alternatively, a metal film thin enough to transmit light can be used for the electrode 551 (i, j). Alternatively, a metal film which transmits part of light and reflects another part of light can be used for the electrode 551 (i, j). Thus, a micro optical resonator structure can be provided in the display element 550 (i, j). As a result, light of a predetermined wavelength can be extracted more efficiently than other light.

For example, a material that can be used for a wiring or the like can be used for the electrode 552. Specifically, a light-reflective material, in other words, a material having reflectivity for visible light, can be used for the electrode 552.

<Drive circuit GD>
Various sequential circuits such as a shift register can be used for the driver circuit GD. For example, a transistor MD, a capacitor, or the like can be used for the driver circuit GD. Specifically, a transistor including a semiconductor film which can be formed in the same step as the transistor M which can be used for the switch SW2 or the transistor M can be used.

For example, the same structure as the transistor M can be used for the transistor MD.

For example, a structure different from that of the transistor M can be used for the transistor MD. Specifically, a metal film can be used for the conductive films 512C, 512D, and 504E (see FIG. 4C). Thus, the electric resistance of the conductive film which also functions as a wiring can be reduced. Alternatively, external light traveling toward the region 508C can be blocked. Alternatively, an abnormality in electric characteristics of the transistor due to external light can be prevented. Alternatively, the reliability of the transistor can be improved.

<Transistor>
For example, a semiconductor film that can be formed in the same process can be used for a driver circuit and a transistor in a pixel circuit.

For example, a bottom-gate transistor or a top-gate transistor can be used as a driver circuit transistor or a pixel circuit transistor.

By the way, for example, a production line for a bottom-gate transistor using amorphous silicon for a semiconductor can be easily modified to a production line for a bottom-gate transistor using an oxide semiconductor for a semiconductor. Further, for example, a top gate type production line using polysilicon as a semiconductor can be easily modified to a top gate type transistor production line using an oxide semiconductor for a semiconductor. Both modifications can make effective use of existing production lines.

For example, a transistor including an oxide semiconductor for a semiconductor film can be used. Specifically, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used for the semiconductor film.

For example, a transistor having a smaller leakage current in an off state than a transistor including amorphous silicon for a semiconductor film can be used. Specifically, a transistor including an oxide semiconductor for a semiconductor film can be used.

Accordingly, the time during which the pixel circuit can hold an image signal can be extended as compared with a pixel circuit using a transistor using amorphous silicon for a semiconductor film. Specifically, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute, while suppressing the occurrence of flicker. As a result, fatigue accumulated in the user of the information processing device can be reduced. Further, power consumption due to driving can be reduced.

For example, a transistor including the semiconductor film 508, the conductive film 504, the conductive film 512A, and the conductive film 512B can be used for the transistor M (see FIG. 4B). Note that the insulating film 506 includes a region interposed between the semiconductor film 508 and the conductive film 504.

The conductive film 504 includes a region overlapping with the semiconductor film 508. The conductive film 504 has a function of a gate electrode. The insulating film 506 has a function of a gate insulating film.

The conductive films 512A and 512B are electrically connected to the semiconductor film 508. The conductive film 512A has one of a source electrode function and a drain electrode function, and the conductive film 512B has the other of a source electrode function and a drain electrode function.

Further, a transistor including the conductive film 524 can be used as a transistor in a driver circuit or a pixel circuit (see FIG. 4B or FIG. 4C). The conductive film 524 includes a region where the semiconductor film 508 is interposed between the conductive film 504 and the conductive film 504. Note that the insulating film 516 includes a region interposed between the conductive film 524 and the semiconductor film 508. Further, for example, the conductive film 524 can be electrically connected to a wiring which supplies the same potential as the conductive film 504.

For example, a conductive film in which a 10-nm-thick film containing tantalum and nitrogen and a 300-nm-thick film containing copper are stacked can be used as the conductive film 504E of the transistor MD. Note that the film containing copper has a region where a film containing tantalum and nitrogen is interposed between the film containing copper and the insulating film 506.

For example, a stacked film of a 400-nm-thick film containing silicon and nitrogen and a 200-nm-thick film containing silicon, oxygen, and nitrogen can be used for the insulating film 506. Note that the film containing silicon and nitrogen has a region where a film containing silicon, oxygen, and nitrogen is provided between the film and the semiconductor film 508.

For example, a 25-nm-thick film containing indium, gallium, and zinc can be used for the semiconductor film 508.

For example, a conductive film in which a 50-nm-thick film containing tungsten, a 400-nm-thick film containing aluminum, and a 100-nm-thick film containing titanium are stacked in this order is a conductive film 512C of the transistor MD or a conductive film. It can be used for the film 512D. Note that the film including tungsten has a region in contact with the semiconductor film 508.

<Structural example 6 of display panel>
A structure of a display panel of one embodiment of the present invention is described with reference to FIGS.

8 and 9 are cross-sectional views illustrating the configuration of a display panel. 8A is a cross-sectional view at a position corresponding to a cutting line X1-X2, a cutting line X3-X4 in FIG. 3A, and a cutting line X5-X6 in FIG. 6, and FIG. 8B and FIG. (C) is a diagram illustrating a part of FIG. 8 (A).

FIG. 9 is a cross-sectional view at a position corresponding to the cutting line X7-X8 in FIG. 6 and the cutting line X9-X10 in FIG.

The display panel described in this embodiment is different from the display panel described with reference to FIGS. 4 and 5 in that the display panel includes a top-gate transistor.

<Structural Example 7 of Display Panel>
The structure of the display panel of one embodiment of the present invention is described with reference to FIGS.

FIG. 10 illustrates a structure of a display panel of one embodiment of the present invention. FIGS. 10A1 and 10A2 are schematic top views when the pixel 900 is viewed from the display surface side. FIG. 10B is a cross-sectional view taken along section line AB in FIG. 10A2.

<Configuration Example 4 of Pixel>
FIG. 10A1 is a schematic top view when the pixel 900 is viewed from the display surface side. The pixel 900 illustrated in FIG. 10A1 includes three sub-pixels. Each sub-pixel is provided with a light-emitting element 930EL (not shown in FIGS. 10A1 and 10A2), a transistor 910, and a transistor 912. Each sub-pixel illustrated in FIG. 10A1 illustrates a light-emitting region (a light-emitting region 916R, a light-emitting region 916G, or a light-emitting region 916B) of the light-emitting element 930EL. Note that the light-emitting element 930EL is a so-called bottom-emission light-emitting element which emits light to the transistors 910 and 912.

The pixel 900 includes a wiring 902, a wiring 904, a wiring 906, and the like. The wiring 902 functions as, for example, a scanning line. The wiring 904 functions as, for example, a signal line. The wiring 906 functions as a power supply line for supplying a potential to the light-emitting element, for example. Further, the wiring 902 and the wiring 904 have portions that cross each other. The wiring 902 and the wiring 906 have portions that intersect with each other. Note that here, the structure in which the wiring 902 crosses the wiring 904 and the wiring 902 crosses the wiring 906 are illustrated; however, the present invention is not limited thereto, and a configuration in which the wiring 904 crosses the wiring 906 may be employed.

The transistor 910 functions as a selection transistor. The gate of the transistor 910 is electrically connected to the wiring 902. One of a source and a drain of the transistor 910 is electrically connected to the wiring 904.

The transistor 912 is a transistor that controls a current flowing to the light-emitting element. The gate of the transistor 912 is electrically connected to the other of the source and the drain of the transistor 910. One of a source and a drain of the transistor 912 is electrically connected to the wiring 906, and the other is electrically connected to one of a pair of electrodes of the light-emitting element 930EL.

In FIG. 10A1, the light-emitting region 916R, the light-emitting region 916G, and the light-emitting region 916B each have a long strip shape in the vertical direction and are arranged in a stripe shape in the horizontal direction.

Here, the wiring 902, the wiring 904, and the wiring 906 have a light-blocking property. Further, it is preferable to use a light-transmitting film for the other layers, that is, for each layer included in the transistors 910 and 912, wirings connected to the transistors, contacts, capacitors, and the like. FIG. 10A2 illustrates an example in which the pixel 900 illustrated in FIG. 10A1 is divided into a transparent region 900t that transmits visible light and a light-shielded region 900s that blocks visible light. In this manner, by manufacturing a transistor using a light-transmitting film, a portion other than a portion where each wiring is provided can be a transmission region 900t. Further, since the light-emitting region of the light-emitting element can overlap with a transistor, a wiring connected to the transistor, a contact, a capacitor, and the like, the aperture ratio of a pixel can be increased.

Note that the light extraction efficiency of the light-emitting element can be increased as the ratio of the area of the transmission region to the area of the pixel is higher. For example, the ratio of the area of the transmission region to the area of the pixel can be 1% or more and 95% or less, preferably 10% or more and 90% or less, more preferably 20% or more and 80% or less. In particular, it is preferably 40% or more or 50% or more, and more preferably 60% or more and 80% or less.

FIG. 10B is a cross-sectional view corresponding to a cross section taken along dashed-dotted line AB in FIG. 10A2. Note that FIG. 10B also illustrates cross sections of the light-emitting element 930EL, the capacitor 913, the driver circuit portion 901, and the like which are not illustrated in the top view. The driver circuit portion 901 can be used as a scan line driver circuit portion or a signal line driver circuit portion. Further, the driver circuit portion 901 includes a transistor 911.

As shown in FIG. 10B, light from the light-emitting element 930EL is emitted in a direction indicated by a dashed arrow. Light from the light-emitting element 930EL is extracted outside through the transistor 910, the transistor 912, the capacitor 913, and the like. Therefore, it is preferable that a film or the like included in the capacitor 913 also have a light-transmitting property. As the area of the light-transmitting region included in the capacitor 913 is larger, attenuation of light emitted from the light-emitting element 930EL can be suppressed.

Note that in the driver circuit portion 901, the transistor 911 may be light-blocking. When the transistor 911 and the like of the driver circuit portion 901 have a light-blocking property, reliability and drive capability of the driver circuit portion can be improved. That is, it is preferable to use a light-blocking conductive film for the gate electrode, the source electrode, and the drain electrode included in the transistor 911. Similarly, it is preferable to use a conductive film having a light-blocking property for wirings connected to these.

For the transistor, the wiring, the capacitor, and the like illustrated in FIG. 10, the following materials can be used.

A semiconductor film included in the transistor can be formed using a light-transmitting semiconductor material. Examples of the light-transmitting semiconductor material include a metal oxide, an oxide semiconductor, and the like. The oxide semiconductor preferably contains at least indium. In particular, it is preferable to contain indium and zinc. In addition, in addition to them, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. Or one or more selected from the above.

The conductive film included in the transistor can be formed using a light-transmitting conductive material. The light-transmitting conductive material preferably contains one or more selected from indium, zinc, and tin. Specifically, an In oxide, an In-Sn oxide (also referred to as ITO: Indium Tin Oxide), an In-Zn oxide, an In-W oxide, an In-W-Zn oxide, an In-Ti oxide, Examples include an In-Sn-Ti oxide, an In-Sn-Si oxide, a Zn oxide, and a Ga-Zn oxide.

Alternatively, an oxide semiconductor whose resistance is reduced by adding an impurity element to the conductive film included in the transistor may be used. The oxide semiconductor whose resistance has been reduced can be referred to as an oxide conductor (OC: Oxide Conductor).

For example, in an oxide conductor, an oxygen vacancy is formed in an oxide semiconductor, and hydrogen is added to the oxygen vacancy, whereby a donor level is formed in the vicinity of a conduction band. When a donor level is formed in the oxide semiconductor, the oxide semiconductor has higher conductivity and becomes a conductor.

Note that an oxide semiconductor has a large energy gap (e.g., an energy gap of 2.5 eV or more) and thus has a light-transmitting property with respect to visible light. Further, as described above, the oxide conductor is an oxide semiconductor having a donor level in the vicinity of a conduction band. Therefore, the oxide conductor has little influence of absorption by the donor level and has a light transmittance to visible light which is almost equal to that of the oxide semiconductor.

Further, the oxide conductor preferably contains one or more kinds of metal elements included in a semiconductor film included in the transistor. By using an oxide semiconductor having the same metal element for two or more layers included in a transistor, a manufacturing apparatus (eg, a film formation apparatus or a processing apparatus) can be commonly used in two or more steps. As a result, manufacturing costs can be reduced.

With the structure of the pixel included in the display device described in this embodiment, light emitted from the light-emitting element can be used efficiently. Therefore, an excellent display device with reduced power consumption can be provided.

Further, the display device of one embodiment of the present invention can reproduce color gamut of various standards. For example, sRGB (standard RGB) widely used in display devices used in electronic devices such as PAL (Phase Altering Line) standard and NTSC (National Television System Committee) standard used in television broadcasting, personal computers, digital cameras, and printers. ITU-R BT. Standard used in the Adobe standards, the Adobe RGB standard, and HDTV (High Definition Television). 709 (International Telecommunications Union Radio Communication Sector Broadcasting Service (Television) 709), DCI-P3 (Digital Cinema Initiation, and Digital Cinema Initiation, which is used in digital cinema projection) R BT. 2020 (REC. 2020) can be reproduced.

Note that this embodiment can be combined with any of the other embodiments in this specification as appropriate.

(Embodiment 2)
<Example 1 of manufacturing method of pixel>
In this embodiment, a method for manufacturing the display element 550 (i, j), the display element 550 (i, j + 1), and the display element 550 (i, j + 2) will be described. In particular, a manufacturing method using a multi-tone (high-tone) mask will be described.

FIG. 11 is a cross-sectional view illustrating a structure of a display panel 700_1.

A portion indicated as a pixel 702 (i, j) in FIG. 11 is a cross-sectional view taken along a cutting line X5-X5M of the pixel 702 (i, j) shown in FIG. Similar to the pixel 702 (i, j) shown in FIG. 6, when the pixel 702 (i, j + 1) and the pixel 702 (i, j + 2) are provided with cutting lines X5 to X5M, their respective cross sections are shown in FIG. They are shown side by side. However, the functional film 770P is not shown in FIG.

The display element 550 (i, j) includes a conductive film 551_0 (i, j), a conductive film 551_1 (i, j), and a conductive film 551_2 (i, j) as the electrode 551 (i, j). The display element 550 (i, j + 1) includes a conductive film 551_0 (i, j + 1) and a conductive film 551_1 (i, j + 1) as the electrode 551 (i, j + 1). The display element 550 (i, j + 2) includes a conductive film 551_0 (i, j + 2), a conductive film 551_1 (i, j + 2), and a conductive film 551_2 (i, j + 2) as the electrode 551 (i, j + 2).

FIGS. 12A, 12B, 14A, and 14B are cross-sectional views illustrating a method for manufacturing a display panel.

FIG. 12A illustrates a state where a conductive film 551_0 is formed over the insulating film 521B, a conductive film 551_1 is formed thereover, and a conductive film 551_2 is formed thereover. As each material, for example, the materials described in Embodiment Mode 1 as the conductive films 551_0 (i, j), the conductive films 551_1 (i, j), and the conductive films 551_2 (i, j) can be used.

The thickness of each of the conductive films 551_1 and 551_2 can be set, for example, in the same manner as in Embodiment Mode 1 or the examples described in Examples.

When the conductive film 551_1 and the conductive film 551_2 are etched under the same conditions with a predetermined solution used for wet etching, it is preferable that the etching rate of the conductive film 551_1 be lower than that of the conductive film 551_2. Alternatively, the conductive film 551_1 preferably has a lower etching rate than the conductive film 551_2 when one solution is used.

For example, the conductive film 551_1 is formed by, for example, a sputtering method using an argon gas and an oxygen gas using a target having a weight ratio of 85% In ₂ O ₃ , 10% SnO ₂ , and 5% SiO ₂ . It can be formed with a thickness of 50 nm. The conductive film 551_2 can be formed to a thickness of 62 nm by a sputtering method using an argon gas and an oxygen gas with the use of a target having a composition of 25% In ₂ O ₃ and 75% ZnO, for example. .

At this time, the etching rate in the case of using oxalic acid at room temperature (a mixed solution containing 5% by weight or less of oxalic acid and 95% by weight or more of water) is 227 nm / min in the conductive film 551_1, and the conductive film 551_2. Is larger than 400 nm / min.

The etching rate in the case of using a mixed acid aluminum solution (a mixed solution containing less than 80% by weight of phosphoric acid, less than 5% by weight of acetic acid, and less than 5% by weight of nitric acid and 5% by weight or more of water) at room temperature 5 nm / min for the conductive film 551_1, and more than 350 nm / min for the conductive film 551_2.

The etching rate in the case of using 0.85% phosphoric acid at room temperature, which is 85% phosphoric acid diluted to 1/100 with water, is 1 nm / min for the conductive film 551_1 and 66.9 nm for the conductive film 551_2. / Min.

For example, the conductive film 551_1 is formed using a crystalline conductive film containing In ₂ O ₃ and SnO _2, and the conductive film 551_2 is formed using a non-crystalline film containing In ₂ O ₃ , SnO ₂ , and SiO ₂ . It may be formed of a conductive film.

For example, the conductive film 551_1 may be formed using a conductive film containing In ₂ O ₃ and ZnO, and the conductive film 551_2 may be formed using a conductive film containing In ₂ O ₃ and ZnO having a smaller ZnO content than the conductive film 551_1.

Note that the etching of the conductive films 551_1 and 551_2 is not limited to wet etching, and dry etching may be used. However, when the conductive film 551_1 and the conductive film 551_2 are dry-etched under the same condition, it is preferable to use a material whose etching rate is lower than that of the conductive film 551_2. Alternatively, the conductive film 551_1 preferably has a lower etching rate in one etching atmosphere than the conductive film 551_2.

As an etching gas used for dry etching, a gas containing chlorine (a chlorine-based gas, for example, chlorine (Cl ₂ ), boron trichloride (BCl ₃ ), silicon tetrachloride (SiCl ₄ ), carbon tetrachloride (CCl ₄ ), etc.) Is preferred.

Further, as other etching gas used for dry etching, a gas containing fluorine (a fluorine-based gas such as carbon tetrafluoride (CF ₄ ), sulfur hexafluoride (SF ₆ ), nitrogen trifluoride (NF ₃ ), Methane (CHF ₃ ), hydrogen bromide (HBr), oxygen (O ₂ ), or a gas obtained by adding a rare gas such as helium (He) or argon (Ar) to these gases.

Next, a resist mask 541 is formed over the conductive film 551_2 (see FIG. 12B).

The resist mask 541 has a region where the thickness of the resist is small in a region overlapping with the pixel 702 (i, j + 1). A region overlapping with the pixel 702 (i, j + 1) can be called a concave portion. In this embodiment mode, exposure using a multi-tone (high-tone) mask is used for forming the resist mask 541. At this time, a resist mask 541 having different resist thicknesses can be formed.

Exposure using a multi-tone (high-tone) mask will be described.

First, a resist is formed to form a resist mask. As the resist, a positive resist or a negative resist can be used. Here, a positive resist is used. The resist may be formed by a spin coating method or may be selectively formed by an inkjet method. When a resist is selectively formed by an ink-jet method, formation of a resist in an unnecessary portion can be reduced, and thus, waste of material can be reduced.

Next, the resist is exposed to light by using a multi-tone mask as an exposure mask to expose the resist.

The multi-tone mask is a mask that can perform three exposure levels on an exposed part, an intermediate exposed part, and an unexposed part, and is an exposure mask in which transmitted light has a plurality of intensities. With a single exposure and development step, a resist mask having a plurality of thicknesses can be formed. Therefore, by using a multi-tone mask, the number of lithography steps can be reduced and the steps can be simplified.

Representative examples of the multi-tone mask include a gray-tone mask 10a as shown in FIG. 13A and a half-tone mask 10b as shown in FIG.

As shown in FIG. 13A, the gray-tone mask 10 a includes a light-transmitting substrate 13 and a light-shielding film 15 formed on the light-transmitting substrate 13. The gray-tone mask 10a has a light-shielding portion 17 provided with a light-shielding film, a diffraction grating portion 18 provided by a pattern of the light-shielding film, and a transmission portion 19 without the light-shielding film.

As the light transmitting substrate 13, a light transmitting substrate such as quartz can be used. The light-shielding film 15 can be formed using a light-shielding material that absorbs light, such as chromium or chromium oxide.

FIG. 13B shows the light transmittance TR when the gray-tone mask 10a is irradiated with exposure light. As shown in FIG. 13B, the light transmittance 21 of the light shielding unit 17 is 0%. In the transmission section 19, the light transmittance 21 is substantially 100%. In the diffraction grating section 18, the light transmittance 21 can be adjusted within a range of 10% or more and 70% or less. In the diffraction grating section 18, the interval between light transmitting portions such as slits, dots, and meshes is set to be equal to or smaller than the resolution limit of light used for exposure. The diffraction grating section 18 can control the light transmittance by adjusting the interval and pitch of the slits, dots, or meshes. Note that the diffraction grating section 18 can use either a periodic slit, dot, or mesh, or an aperiodic slit, dot, or mesh.

As shown in FIG. 13C, the halftone mask 10b includes a light-transmitting substrate 13 and a light-shielding film 25 and a semi-light-transmitting film 23 formed on the light-transmitting substrate 13. The halftone mask 10b includes a light-shielding portion 27 provided with the light-shielding film 25 and the semi-light-transmitting film 23, a semi-light-transmitting portion 28 without the light-shielding film 25 and provided with the semi-light-transmitting film 23, and a light-shielding portion. It has a transmission section 29 where the film 25 and the semi-light transmission film 23 are not provided.

FIG. 13D shows the light transmittance when the halftone mask 10b is irradiated with exposure light.
As shown in FIG. 13D, the light transmittance 31 of the light shielding portion 27 is 0%, and the light transmittance 31 of the light transmitting portion 29 is approximately 100%. In the semi-light transmitting section 28, the light transmittance 31 can be adjusted within a range of 10% or more and 70% or less. In the semi-light transmitting section 28, the light transmittance can be controlled by the material of the semi-light transmitting film 23.

For the semi-light transmitting film 23, MoSiN, MoSi, MoSiO, MoSiON, CrSi, or the like can be used. The light-blocking film 25 can be formed using a light-blocking material that absorbs light, such as chromium or chromium oxide.

After exposure using a multi-tone mask and development, a resist mask having regions with different thicknesses as illustrated in FIG. 12B can be formed.

Note that, as the multi-tone mask, an example in which the resist has two types of film thicknesses is shown, but the embodiment of the present invention is not limited to this. By using the diffraction grating portion 18 or the semi-light transmitting film 23 having a plurality of light transmittances, a resist having three or more types of film thickness can be formed.

Next, part of the conductive film 551_0, the conductive film 551_1, and the conductive film 551_2 is removed using the resist mask 541 as a mask, and the conductive film 551_0 (i, j) is formed in the pixel 702 (i, j). And a conductive film 551_1 (i, j) and a conductive film 551_2 (i, j) are formed. The same applies to the pixel 702 (i, j + 1) and the pixel 702 (i, j + 2). However, a conductive film 551_2 (i, j + 1) is formed in the pixel 702 (i, j + 1), and the conductive film 551_2 (i, j + 1) is removed in the following steps.

For the processing of the conductive films 551_0, 551_1, and 551_2, wet etching can be used. However, the processing method is not limited to this, and for example, dry etching may be used.

Next, a part of the resist mask 541 is removed by receding, so that the area of the resist mask is reduced. The term “retreat” used herein means to reduce the film thickness. Through the above removal, a resist mask 542 is formed (see FIG. 14A).

An ashing device can be used for removing part of the resist mask. Ashing may reduce the area of the resist mask and reduce the thickness of the resist mask.

For example, as the ashing, light excitation ashing may be used in which a gas such as oxygen or ozone is irradiated with light such as ultraviolet light to cause a chemical reaction between the gas and an organic substance to remove the organic substance. As ashing, plasma ashing may be used in which a gas such as oxygen or ozone is converted into plasma with high frequency or the like, and the plasma is used to remove organic substances.

In the region of the resist mask 541 where the resist mask is thin, the resist is removed by the ashing, and the resist mask is separated as shown in FIG. Accordingly, the resist mask in a region overlapping with the pixel 702 (i, j + 1) is removed, and the conductive film 551_2 (i, j + 1) of the pixel 702 (i, j + 1) is exposed.

Next, the conductive film 551_2 (i, j + 1) is etched using the resist mask 542 as a mask.

For the etching, oxalic acid at room temperature, aluminum mixed acid at room temperature, or a solution at room temperature in which 85% phosphoric acid is diluted to 1% can be used, for example. At this time, since the conductive film 551_2 (i, j + 1) has a higher etching rate than the conductive film 551_2 (i, j), the conductive film 551_2 (i, j) can be favorably processed without disappearing.

Next, the resist mask 542 is removed (see FIG. 14B).

Next, a light-emitting layer 553 and an electrode 552 are formed. Further, the substrate 570 is bonded to the substrate 770 using the bonding layer 505. Further, a functional film 770P is formed. Through such steps, the display panel 700_1 can be manufactured.

(Embodiment 3)
In this embodiment mode, a display panel different from that in Embodiment Mode 1 will be described.

<Configuration Example 5 of Pixel>
In the display panel 700_2 of one embodiment of the present invention, a material stacked to emit red light is used for the light-emitting layer 553 (j), and a material stacked to emit green light is used for the light-emitting layer 553 ( j + 1), a material stacked so as to emit blue light can be used for the light-emitting layer 553 (j + 2) (see FIGS. 15A and 15B).

The pixel 702 (i, j) includes the light emitting layer 553 (j), the pixel 702 (i, j + 1) includes the light emitting layer 553 (j + 1), and the pixel 702 (i, j + 2) includes the light emitting layer 553 (j).

Thus, red display can be performed using the pixel 702 (i, j). Green display can be performed using the pixel 702 (i, j + 1). Blue display can be performed using the pixel 702 (i, j + 2).

At this time, the respective optical distances in the thickness direction of the light-emitting layer 553 (j), the light-emitting layer 553 (j + 1), and the light-emitting layer 553 (j + 2) are made equal to those in the pixel configuration example 1.

As shown in FIG. 15B, a structure without the coloring film CF1 (R), the coloring film CF1 (G), and the coloring film CF1 (B) may be employed. Other structures of the display element 550 are the same as those of the display panel 700.

With the configuration of each sub-pixel having the above film thickness, the pixel 702 (i, j) increases the color purity of red, the pixel 702 (i, j + 1) increases the color purity of green, and the pixel 702 (i, j + 1) displays blue. Can be enhanced, and any display can be made vivid.

<Structural Example 6 of Pixel>
Further, as in the display panel 700_4 (see FIG. 16A), light L2 is emitted from the display element 550 (i, j) in a direction opposite to the direction in which the pixel circuits 530 (i, j) are provided. It may be a structure to be injected. At this time, the pixel circuit 530 (i, j) is provided so as to sandwich the electrode 552 having light reflectivity between the pixel circuit 530 (i, j) and the electrode 551 (i, j). At this time, a coloring film CF1 (R) can be provided on a path from which the light L2 is emitted. The same applies to the display element 550 (i, j + 1) and the display element 550 (i, j + 2).

At this time, in the display element 550 (i, j), it is preferable that the light-emitting layer 553 be provided between the conductive films 551_1 (i, j) and the conductive films 551_0 (i, j) (FIG. 16). (B)). The same applies to the display element 550 (i, j + 1) and the display element 550 (i, j + 2).

In the display panel 700_4, the pixel circuit 530 (i, j) is provided at a position where the emitted light is not blocked, so that the aperture ratio can be improved as compared to the display panel 700.

(Embodiment 4)
In this embodiment, a metal oxide that can be used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention is described. Note that in the case where a metal oxide is used for a semiconductor layer of a transistor, the metal oxide may be replaced with an oxide semiconductor.

Oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, CAAC-OS (c-axis-aligned crystal oxide semiconductor), a polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxide semiconductor), and a pseudo-amorphous oxide semiconductor (a-like OS) : Amorphous-like oxide semiconductor) and an amorphous oxide semiconductor.

Further, a CAC-OS (Cloud-Aligned Composite) may be used for a semiconductor layer of the transistor disclosed in one embodiment of the present invention.

Note that for the semiconductor layer of the transistor disclosed in one embodiment of the present invention, the above-described non-single-crystal oxide semiconductor or CAC-OS can be preferably used. As the non-single-crystal oxide semiconductor, an nc-OS or a CAAC-OS can be preferably used.

Note that in one embodiment of the present invention, a CAC-OS is preferably used as a semiconductor layer of the transistor. With the use of the CAC-OS, the transistor can have high electrical characteristics or high reliability.

Hereinafter, the details of the CAC-OS will be described.

The CAC-OS or CAC-metal oxide has a conductive function in part of a material, an insulating function in part of the material, and a semiconductor function as a whole of the material. Note that in the case where CAC-OS or CAC-metal oxide is used for a channel formation region of a transistor, the conductivity function is a function of flowing electrons (or holes) serving as carriers, and the insulating function is a carrier. This function does not allow electrons to flow. A switching function (on / off function) can be given to the CAC-OS or CAC-metal oxide by causing the conductive function and the insulating function to act complementarily. In the CAC-OS or CAC-metal oxide, by separating the respective functions, both functions can be maximized.

Further, the CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. In the material, the conductive region and the insulating region may be separated at the nanoparticle level. In addition, the conductive region and the insulating region may be unevenly distributed in the material, respectively. In some cases, the conductive region is blurred at the periphery and observed in a cloud shape.

In the CAC-OS or CAC-metal oxide, the conductive region and the insulating region are each dispersed in a material in a size of 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. There is.

Further, CAC-OS or CAC-metal oxide includes components having different band gaps. For example, a CAC-OS or a CAC-metal oxide includes a component having a wide gap due to an insulating region and a component having a narrow gap due to a conductive region. In the case of the configuration, when the carrier flows, the carrier mainly flows in the component having the narrow gap. In addition, the component having a narrow gap acts in a complementary manner to the component having a wide gap, and the carrier flows through the component having the wide gap in conjunction with the component having the narrow gap. Therefore, in the case where the CAC-OS or CAC-metal oxide is used for a channel formation region of a transistor, high current driving capability, that is, a high on-state current and high field-effect mobility can be obtained when the transistor is on.

That is, the CAC-OS or the CAC-metal oxide may be referred to as a matrix composite or a metal matrix composite.

The CAC-OS is, for example, one structure of a material in which elements included in a metal oxide are unevenly distributed in a size of 0.5 nm to 10 nm, preferably, 1 nm to 2 nm or in the vicinity thereof. Note that in the following, one or more metal elements are unevenly distributed in the metal oxide, and the region having the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm or a size in the vicinity thereof. The mixed state is also called a mosaic shape or a patch shape.

Note that the metal oxide preferably contains at least indium. In particular, it is preferable to contain indium and zinc. In addition, in addition to them, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. One or more selected from the above may be included.

For example, a CAC-OS in an In-Ga-Zn oxide (an In-Ga-Zn oxide may be referred to as a CAC-IGZO among CAC-OSs) is an indium oxide (hereinafter referred to as InO). _X1 (X1 is greater real than 0) and.), or indium zinc oxide _{(hereinafter, in X2 Zn Y2 O Z2 (} X2, Y2, and Z2 is larger real than 0) and a.), gallium Oxide (hereinafter, referred to as GaO _X3 (X3 is a real number larger than 0)) or gallium zinc oxide (hereinafter, Ga _X4 Zn _Y4 O _Z4 (X4, Y4, and Z4 are real numbers larger than 0)) to.) and the like, the material becomes mosaic by separate into, mosaic _{InO X1} or _in X2 _Zn Y2 _{O Z2,} is a configuration in which uniformly distributed in the film (hereinafter, click Also called Udo-like.) A.

That is, the CAC-OS is a composite metal oxide having a structure in which a region containing GaO _X3 as a main component and a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component are mixed. Note that in this specification, for example, it is assumed that the atomic ratio of In to the element M in the first region is larger than the atomic ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that of the region No. 2.

Note that IGZO is a common name and may refer to one compound of In, Ga, Zn, and O. Representative examples are _represented by InGaO 3 _(ZnO) m1 (m1 is a natural number), or _{In (1 + x0) Ga (} 1-x0) O 3 (ZnO) m0 (-1 ≦ x0 ≦ 1, m0 is an arbitrary number) Crystalline compounds are mentioned.

The crystalline compound has a single crystal structure, a polycrystal structure, or a CAAC (c-axis aligned crystal) structure. Note that the CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have a c-axis orientation and are connected without being oriented in the ab plane.

On the other hand, CAC-OS relates to a material configuration of a metal oxide. A CAC-OS is a material composition containing In, Ga, Zn, and O, a part of which is observed as a nanoparticle mainly containing Ga and a part of a nanoparticle mainly containing In. A region observed in a shape refers to a configuration in which each region is randomly dispersed in a mosaic shape. Therefore, in the CAC-OS, the crystal structure is a secondary element.

Note that the CAC-OS does not include a stacked structure of two or more kinds of films having different compositions. For example, a structure including two layers of a film mainly containing In and a film mainly containing Ga is not included.

Incidentally, GaOX3 is a region which is a main _component, and In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component region, in some cases clear boundary can not be observed.

Instead of gallium, selected from aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, or the like In the case where one or a plurality of kinds are included, the CAC-OS is divided into a region which is observed in the form of a nanoparticle mainly including the metal element and a nanoparticle mainly including In. The region observed in the form of particles refers to a configuration in which each of the regions is randomly dispersed in a mosaic shape.

The CAC-OS can be formed by a sputtering method without heating the substrate, for example. In the case where the CAC-OS is formed by a sputtering method, any one or more selected from an inert gas (typically, argon), an oxygen gas, and a nitrogen gas is used as a deposition gas. Good. Further, the flow rate ratio of the oxygen gas to the total flow rate of the film formation gas during the film formation is preferably as low as possible. .

The CAC-OS is characterized in that a clear peak is not observed when measured using a θ / 2θ scan by an Out-of-plane method, which is one of X-ray diffraction (X-ray diffraction) measurement methods. Have. That is, it is understood from the X-ray diffraction that the orientation in the a-b plane direction and the c-axis direction of the measurement region is not observed.

In an electron beam diffraction pattern obtained by irradiating an electron beam having a probe diameter of 1 nm (also referred to as a nanobeam electron beam), a CAC-OS has a ring-shaped region with high luminance and a plurality of bright regions in the ring region. A point is observed. Therefore, the electron diffraction pattern shows that the crystal structure of the CAC-OS has an nc (nano-crystal) structure having no orientation in a planar direction and a cross-sectional direction.

In addition, for example, in a CAC-OS in an In-Ga-Zn oxide, a region where GaO _X3 is a main component is obtained by EDX mapping acquired using energy dispersive X-ray spectroscopy (EDX: Energy Dispersive X-ray spectroscopy). It can be confirmed that a region where In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is unevenly distributed and mixed.

The CAC-OS has a different structure from an IGZO compound in which metal elements are uniformly distributed, and has different properties from the IGZO compound. That is, the CAC-OS is phase-separated into a region containing GaO _X3 or the like as a main component and a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component. Has a mosaic structure.

Here, a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is a region having higher conductivity than a region in which GaO _X3 or the like is a main component. That is, when a carrier flows through a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component, conductivity as an oxide semiconductor is exhibited. Therefore, high field-effect mobility (μ) can be realized by distributing a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component in a cloud shape in the oxide semiconductor.

On the other hand, areas such GaOX3 is the main _component, as compared to the In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component area, it is highly regions insulating. That is, a region in which GaOX3 or the like is a main component is distributed in the oxide semiconductor, whereby a leakage current can be suppressed and a favorable switching operation can be realized.

Therefore, in the case where a CAC-OS is used for a semiconductor element, the insulating property caused by GaO _X3 or the like and the conductivity caused by In _X2 Zn _Y2 O _Z2 or InO _X1 act complementarily, and thus are high. On-state current (Ion) and high field-effect mobility (μ) can be realized.

A semiconductor element using the CAC-OS has high reliability. Therefore, the CAC-OS is most suitable for various semiconductor devices including a display.

This embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 5)
In this embodiment, a structure of a display device of one embodiment of the present invention will be described with reference to FIGS.

FIG. 17 is a block diagram illustrating a structure of a display device of one embodiment of the present invention.

FIG. 18A is a block diagram illustrating a structure different from the structure of the display panel illustrated in FIG. FIGS. 18B-1 to 18B-3 are diagrams illustrating appearance of a display device of one embodiment of the present invention.

<Configuration example of display device>
The display device described in this embodiment includes a control unit 238 and a display panel 700 (see FIG. 17).

<Control unit 238>
The control unit 238 has a function of receiving the image information V1 and the control information SS.

The control unit 238 has a function of generating information V12 based on the image information V1. The control unit 238 has a function of supplying the information V12.

For example, the control unit 238 includes a decompression circuit 234 and an image processing circuit 235M.

<Display panel 700>
The display panel 700 has a function of receiving the information V12. The display panel 700 includes a pixel 702 (i, j).

The pixel 702 (i, j) includes a display element 550 (i, j).

The display element 550 (i, j) has a function of displaying based on the information V12, and the display element 550 (i, j) is a light emitting element.

For example, the display panel described in Embodiment 1 can be used for the display panel 700. Alternatively, it can be used for the display panel 700B. For example, a television receiving system (see FIG. 18B-1), a video monitor (see FIG. 18B-2), a notebook computer (see FIG. 18B-3), or the like can be provided. .

Thus, image information can be displayed using the display element. As a result, a novel display device with excellent convenience or reliability can be provided.

<Expansion circuit 234>
The expansion circuit 234 has a function of expanding the image information V1 supplied in a compressed state. The expansion circuit 234 includes a storage unit. The storage unit has a function of storing expanded image information, for example.

<Image processing circuit 235M>
The image processing circuit 235M includes, for example, an area.

The area has, for example, a function of storing information included in the image information V1.

The image processing circuit 235M has, for example, a function of correcting the image information V1 based on a predetermined characteristic curve to generate the information V12, and a function of supplying the information V12. Specifically, it has a function of generating information V12 so that the display element 550 (i, j) displays a good image.

Note that this embodiment can be combined with any of the other embodiments in this specification as appropriate.

(Embodiment 6)
In this embodiment, a structure of the input / output device of one embodiment of the present invention will be described with reference to FIGS.

FIG. 19 is a block diagram illustrating a structure of an input / output device of one embodiment of the present invention.

<Example of configuration of input / output device>
The input / output device described in this embodiment includes an input unit 240 and a display unit 230 (see FIG. 19). For example, the display panel 700 described in Embodiment 1 can be used for the display portion 230.

The input unit 240 includes a detection area 241. The input unit 240 has a function of detecting an object near the detection area 241.

The detection area 241 includes an area overlapping the pixel 702 (i, j).

<Input unit 240>
The input unit 240 includes a detection area 241. The input unit 240 can include an oscillation circuit OSC and a detection circuit DC (see FIG. 19).

<Detection area 241>
The sensing area 241 can include, for example, one or more sensing elements.

The detection region 241 includes a group of detection elements 775 (g, 1) to 775 (g, q) and another group of detection elements 775 (1, h) to 775 (p, h). (See FIG. 19). In addition, g is an integer of 1 or more and p or less, h is an integer of 1 or more and q or less, and p and q are integers of 1 or more.

The group of the sensing elements 775 (g, 1) to 775 (g, q) includes the sensing elements 775 (g, h) and is arranged in the row direction (the direction indicated by the arrow R2 in the drawing). The direction indicated by arrow R2 in FIG. 19 may be the same as or different from the direction indicated by arrow R1 in FIG.

Further, another group of the sensing elements 775 (1, h) to 775 (p, h) includes the sensing element 775 (g, h) and includes a column direction (indicated by an arrow C2 in the drawing) crossing the row direction. (Direction shown).

<Detection element>
The detecting element has a function of detecting a nearby pointer. For example, a finger, a stylus pen, or the like can be used as a pointer. For example, a metal piece or a coil can be used for the stylus pen.

Specifically, a proximity sensor of a capacitance type, a proximity sensor of an electromagnetic induction type, a proximity sensor of an optical type, a proximity sensor of a resistive film type, or the like can be used as the detection element.

Further, a plurality of types of detection elements can be used together. For example, a detecting element for detecting a finger and a detecting element for detecting a stylus pen can be used in combination. Thus, the type of the pointer can be determined. Alternatively, a different instruction can be associated with the detection information based on the determined type of the pointer. Specifically, when it is determined that the finger is used as the pointer, the detection information can be associated with the gesture. Alternatively, when it is determined that the stylus pen is used as the pointer, the detection information can be associated with the drawing processing.

Specifically, a finger can be detected using a capacitance type or optical type proximity sensor. Alternatively, a stylus pen can be detected by using an electromagnetic induction type or optical type proximity sensor.

Note that this embodiment can be combined with any of the other embodiments in this specification as appropriate.

(Embodiment 7)
In this embodiment, a structure of an input / output panel of one embodiment of the present invention will be described with reference to FIGS.

FIG. 20 illustrates a structure of an input / output panel that can be used for the input / output device of one embodiment of the present invention. FIG. 20A is a top view of the input / output panel. 20 (B) and 20 (C) are projection views for explaining a part of FIG. 20 (A).

FIG. 21 illustrates a structure of an input / output panel which can be used for the input / output device of one embodiment of the present invention. FIG. 21A is a top view of an adjacent portion of the control line and the detection signal line. FIG. 21B is a projection view schematically explaining an electric field generated in an adjacent portion.

<Example of input / output panel configuration>
The input / output panel described in this embodiment is different from, for example, the display panel 700 described in Embodiment 1 in having a detection region 241. Here, different portions will be described in detail, and the above description will be referred to portions where a similar structure can be used.

<Detection area 241>
The detection region 241 includes a control line CL (g), a detection signal line ML (h), and a conductive film. The conductive film includes the sensing element 775 (g, h) (see FIGS. 19 and 20A).

For example, a conductive film divided into a plurality of regions can be used for the detection region 241 (see FIG. 19 or FIG. 20). Thus, different potentials can be supplied to each of the plurality of regions.

Specifically, a conductive film divided into a conductive film that can be used for the control line CL (g) and a conductive film that can be used for the detection signal line ML (h) can be used for the detection region 241. it can. In addition, for example, a rectangular conductive film can be used for each of the conductive films divided into a plurality of regions (see FIGS. 21, 4A, and 5). Thus, the divided conductive film can be used as an electrode of a sensing element. Alternatively, different potentials can be supplied to the control line. Alternatively, an in-cell input / output panel can be provided. Alternatively, members constituting the input / output panel can be reduced.

For example, a conductive film that can be used for the control line CL (g), a conductive film that can be used for the detection signal line ML (h), and a conductive film that can be used for the detection signal line ML (h + 1). The divided conductive films are adjacent to each other in the adjacent portion X0 (see FIG. 20A, FIG. 20C, or FIG. 21).

The detection element 775 (g, h) is electrically connected to the control line CL (g) and the detection signal line ML (h) (see FIG. 20A).

Note that the control line CL (g) has a function of supplying a control signal, and the detection signal line ML (h) has a function of supplying a detection signal.

<Detection element 775 (g, h)>
The detection element 775 (g, h) has a function of supplying a control signal and a detection signal that changes based on a distance between the control element and a pixel near an area overlapping with the pixel 702 (i, j). Further, the sensing element 775 (g, h) includes an electrode C (g) and an electrode M (h) (see FIG. 21B).

The electrode C (g) includes a light-transmitting region in a region overlapping with the pixel 702 (i, j), and the electrode C (g) is electrically connected to the control line CL (g). Note that the electrode C (g) can be called a control electrode. Further, by using the same conductive film as the conductive film used for the control line CL (g) for the electrode C (g), the control line CL (g) and the electrode C (g) can be integrated.

The electrode M (h) has a light-transmitting region in a region overlapping with the pixel 702 (i, j) (see FIGS. 4A and 5). Further, the electrode M (h) is electrically connected to the detection signal line ML (h). In addition, the electrode M (h) is arranged so as to form an electric field between the electrode C (g) and the electric field partially interrupted by an object close to a region overlapping with the pixel 702 (i, j) (FIG. 21). (B)). Note that the electrode M (h) can be referred to as a detection electrode. Further, by using the same conductive film as the conductive film used for the detection signal line ML (h) for the electrode M (h), the detection signal line ML (h) and the electrode M (h) can be integrated.

For example, when a control signal is supplied to the control line CL (g), an electric field is formed between the electrode C (g) and the electrode M (h) or between the electrode C (g) and the electrode M (h + 1) (FIG. 21 (B)). In addition, for example, part of the electric field formed between the electrode C (g) and the electrode M (h) is blocked by an adjacent finger or the like.

Thereby, while displaying image information using the display unit, it is possible to detect an object approaching an area overlapping with the display unit. Alternatively, position information can be input using a finger or the like approaching the display portion as a pointer. Alternatively, the position information can be associated with the image information displayed on the display unit. As a result, a novel input / output device with excellent convenience or reliability can be provided.

<Oscillation circuit OSC>
The oscillation circuit OSC is electrically connected to the control line CL (g) and has a function of supplying a control signal. For example, a rectangular wave, a sawtooth wave, a triangular wave, or the like can be used as the control signal.

<Detection circuit DC>
The detection circuit DC is electrically connected to the detection signal line ML (h) and has a function of supplying a detection signal based on a change in the potential of the detection signal line ML (h). The detection signal includes, for example, position information P1.

<Display unit 230>
For example, the display panel described in Embodiment 1 can be used for the display portion 230. Alternatively, the display device described in Embodiment 5 can be used for the display portion 230.

<Detection element 775 (g, h)>
The detection element 775 (g, h) includes an electrode C (g) and a detection signal line ML (h).

For example, a conductive film having light transmittance can be used for the electrode C (g) and the detection signal line ML (h). Alternatively, a conductive film having an opening in a region overlapping with the pixel 702 (i, j) can be used for the electrode C (g) and the detection signal line ML (h). This makes it possible to detect an object close to an area overlapping with the display panel without interrupting display on the display panel.

Note that the detection region 241 includes a group of detection elements 775 (g, 1) to 775 (g, q) and another group of detection elements 775 (1, h) to 775 (p, h). (See FIG. 19). In addition, g is an integer of 1 or more and p or less, h is an integer of 1 or more and q or less, and p and q are integers of 1 or more.

The group of the sensing elements 775 (g, 1) to 775 (g, q) includes the sensing elements 775 (g, h) and is arranged in the row direction (the direction indicated by the arrow R2 in the drawing). The direction indicated by arrow R2 in FIG. 19 may be the same as or different from the direction indicated by arrow R1 in FIG.

Further, another group of the sensing elements 775 (1, h) to 775 (p, h) includes the sensing element 775 (g, h) and includes a column direction (indicated by an arrow C2 in the drawing) crossing the row direction. (Direction shown).

A group of sensing elements 775 (g, 1) to 775 (g, q) arranged in the row direction includes an electrode C (g) electrically connected to the control line CL (g) (FIG. 20 (B) or FIG. 20 (C)). For example, a conductive film that can be formed in the same step can be used for the control line CL (g) and the electrode C (g).

Another group of the sensing elements 775 (1, h) to 775 (p, h) arranged in the column direction includes an electrode M (h) electrically connected to the sensing signal line ML (h). Including. For example, a conductive film that can be formed in the same step can be used for the detection signal line ML (h) and the electrode M (h).

The detection signal line ML (h) includes a conductive film BR (g, h) (see FIG. 20B and FIG. 6). The conductive film BR (g, h) has a region overlapping with the control line CL (g).

Note that the detection element 775 (g, h) includes an insulating film. The insulating film includes a region sandwiched between the detection signal line ML (h) and the conductive film BR (g, h). This can prevent the detection signal line ML (h) and the conductive film BR (g, h) from being short-circuited.

Note that this embodiment can be combined with any of the other embodiments in this specification as appropriate.

(Embodiment 8)
The display panel of one embodiment of the present invention may have a structure different from those in Embodiments 1 to 7.

In this embodiment mode, a display panel including both a reflective display element 750 (i, j) using a layer containing a liquid crystal material and a display element 550 (i, j) having a function of emitting light is provided. The structure of the circuit 700_3 will be described with reference to FIGS.

The display panel 700_3 has a function of acquiring information V11 and information V12 from an arithmetic device or the like. The arithmetic device can generate the information V11 and the information V12 so that the display panel 700_3 can display an image or the like in a desired display method. For example, moving image information of a video is included in the information V11, and still image information is included in the information V12.

The display panel 700_3 displays the display element 750 (i, j) based on the information V11, and displays the display element 550 (i, j) based on the information V12.

FIG. 22 is a block diagram illustrating a structure of a display device of one embodiment of the present invention. The display device has a display panel.

FIG. 23 is a block diagram illustrating a structure of a display panel of a display device of one embodiment of the present invention. FIG. 23 is a block diagram illustrating a configuration different from the configuration shown in FIG.

FIG. 24 illustrates a structure of a display panel that can be used for the display device of one embodiment of the present invention. FIG. 24A is a top view of a display panel, and FIG. 24B is a top view illustrating part of pixels of the display panel illustrated in FIG. FIG. 24C is a schematic diagram illustrating a structure of the pixel illustrated in FIG.

FIG. 25 and FIG. 26 are cross-sectional views illustrating the configuration of the display panel. 25A is a cross-sectional view taken along a cutting line X1-X2, a cutting line X3-X4, and a cutting line X5-X6 in FIG. 24A, and FIG. 25B is a portion of FIG. FIG.

26A is a cross-sectional view taken along a cutting line X7-X8 and a cutting line X9-X10 in FIG. 24A, and FIG. 26B is a diagram illustrating a part of FIG.

FIG. 27A is a bottom view illustrating part of the pixel of the display panel illustrated in FIG. 24B, and FIG. 27B is a diagram illustrating a part of the structure illustrated in FIG. FIG.

FIG. 28 is a circuit diagram illustrating a structure of a pixel circuit included in a display panel of one embodiment of the present invention.

FIG. 29 is a schematic diagram illustrating the shape of a light reflecting film that can be used for a pixel of a display panel.

In the present specification, a variable that takes an integer of 1 or more as a value may be used as a sign. For example, (p) including a variable p having an integer value of 1 or more may be used as a part of a code specifying any of the p components at maximum. Further, for example, (m, n) including a variable m and a variable n having an integer value of 1 or more may be used as a part of a code for specifying any of m × n components at the maximum.

<Display panel configuration example 8>
The display panel 700_3 described in this embodiment includes a display region 231 (see FIG. 22). Further, the display panel 700_3 can include the driver circuit GD or the driver circuit SD.

Further, the display panel can include a plurality of driver circuits. For example, the display panel 700_3B includes a driver circuit GDA and a driver circuit GDB (see FIG. 23).

<Display area 231>
The display region 231 includes a group of a plurality of pixels 702 (i, 1) to 702 (i, n), another group of a plurality of pixels 702 (1, j) to pixel 702 (m, j), And a line G1 (i) (see FIG. 22, FIG. 27 or FIG. 28). Further, it includes a scanning line G2 (i), a wiring CSCOM, a third conductive film ANO, and a signal line S2 (j). Note that i is an integer of 1 or more and m or less, j is an integer of 1 or more and n or less, and m and n are integers of 1 or more.

The group of the plurality of pixels 702 (i, 1) to 702 (i, n) includes the pixel 702 (i, j), and the group of the plurality of pixels 702 (i, 1) to 702 (i, n) includes They are arranged in the row direction (the direction indicated by arrow R1 in the figure).

The other group of the plurality of pixels 702 (1, j) to 702 (m, j) includes the pixel 702 (i, j), and the other group of the plurality of pixels 702 (1, j) to 702 (m , J) are arranged in the column direction intersecting the row direction (the direction indicated by arrow C1 in the figure).

The scanning lines G1 (i) and G2 (i) are electrically connected to a group of a plurality of pixels 702 (i, 1) to 702 (i, n) arranged in the row direction.

Another group of a plurality of pixels 702 (1, j) to 702 (m, j) arranged in the column direction are electrically connected to the signal lines S1 (j) and S2 (j). .

<Drive circuit GD>
The drive circuit GD has a function of supplying a selection signal based on control information.

For example, a function of supplying a selection signal to one scanning line at a frequency of 30 Hz or more, preferably 60 Hz or more, based on control information is provided. Thereby, a moving image can be displayed smoothly.

For example, a function of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute based on control information is provided. Thus, a still image can be displayed with flicker suppressed.

Further, for example, in the case where a plurality of drive circuits are provided, the frequency at which the drive circuit GDA supplies the selection signal can be different from the frequency at which the drive circuit GDB supplies the selection signal. Specifically, a selection signal can be supplied to a region where a moving image is displayed smoothly more frequently than a region where a still image is displayed in a state where flicker is suppressed.

<Drive circuit SD, drive circuit SD1, drive circuit SD2>
The drive circuit SD has a drive circuit SD1 and a drive circuit SD2. The drive circuit SD1 has a function of supplying an image signal based on the information V11, and the drive circuit SD2 has a function of supplying an image signal based on the information V12 (see FIG. 22).

The drive circuit SD1 has a function of generating an image signal to be supplied to a pixel circuit electrically connected to one display element. Specifically, it has a function of generating a signal whose polarity is inverted. Thereby, for example, a liquid crystal display element can be driven.

The drive circuit SD2 has a function of generating an image signal to be supplied to a pixel circuit electrically connected to another display element which performs display by using a method different from that of one display element. For example, an organic EL element can be driven.

For example, various sequential circuits such as a shift register can be used for the drive circuit SD.

For example, an integrated circuit in which the driver circuits SD1 and SD2 are integrated can be used for the driver circuit SD. Specifically, an integrated circuit formed over a silicon substrate can be used for the drive circuit SD.

For example, a terminal can be implemented by using an integrated circuit as a terminal by using a COG (Chip on glass) method or a COF (Chip on Film) method. Specifically, an integrated circuit can be mounted on a terminal using an anisotropic conductive film.

<Pixel configuration example>
The pixel 702 (i, j) includes the display element 750 (i, j), the display element 550 (i, j), and a part of the functional layer 520 (FIGS. 24C, 25A, and 26). (A)).

<Functional layer>
The functional layer 520 includes a first conductive film, a second conductive film, an insulating film 501C, and a pixel circuit 530 (i, j) (see FIGS. 25A and 25B). . The functional layer 520 includes an insulating film 521, an insulating film 528, an insulating film 518, and an insulating film 516.

Note that the functional layer 520 includes a region sandwiched between the substrate 570 and the substrate 770.

<Insulating film 501C>
The insulating film 501C includes a region sandwiched between the first conductive film and the second conductive film, and the insulating film 501C includes an opening 591A (see FIG. 26A).

<First conductive film>
For example, the first electrode 751 (i, j) of the display element 750 (i, j) can be used as a first conductive film. The first conductive film is electrically connected to the first electrode 751 (i, j).

<Second conductive film>
For example, the conductive film 512B can be used for the second conductive film. The second conductive film has a region overlapping with the first conductive film. The second conductive film is electrically connected to the first conductive film in the opening 591A. By the way, the first conductive film which is electrically connected to the second conductive film in the opening 591A provided in the insulating film 501C can be referred to as a through electrode.

The second conductive film is electrically connected to the pixel circuit 530 (i, j). For example, a conductive film functioning as a source electrode or a drain electrode of a transistor used for the switch SW1 of the pixel circuit 530 (i, j) can be used for the second conductive film.

<Pixel circuit>
The pixel circuit 530 (i, j) has a function of driving the display element 750 (i, j) and the display element 550 (i, j) (see FIG. 28).

A switch, a transistor, a diode, a resistor, an inductor, a capacitor, or the like can be used for the pixel circuit 530 (i, j).

For example, one or more transistors can be used for a switch. Alternatively, a plurality of transistors connected in parallel, a plurality of transistors connected in series, and a plurality of transistors connected in combination of series and parallel can be used for one switch.

For example, the pixel circuit 530 (i, j) includes the signal line S1 (j), the signal line S2 (j), the scanning line G1 (i), the scanning line G2 (i), the wiring CSCOM, and the third conductive film ANO. They are electrically connected (see FIG. 28). Note that the conductive film 512A is electrically connected to the signal line S1 (j) (see FIGS. 26A and 28).

The pixel circuit 530 (i, j) includes a switch SW1 and a capacitor C11 (see FIG. 28).

The pixel circuit 530 (i, j) includes a switch SW2, a transistor M, and a capacitor C12.

For example, a transistor including a gate electrode electrically connected to the scan line G1 (i) and a first electrode electrically connected to the signal line S1 (j) can be used for the switch SW1. .

The capacitor C11 includes a first electrode electrically connected to a second electrode of the transistor used for the switch SW1, and a second electrode electrically connected to the wiring CSCOM.

For example, a transistor including a gate electrode electrically connected to the scan line G2 (i) and a first electrode electrically connected to the signal line S2 (j) can be used for the switch SW2. .

The transistor M has a gate electrode electrically connected to the second electrode of the transistor used for the switch SW2, and a first electrode electrically connected to the third conductive film ANO.

Note that a transistor including a conductive film provided so that a semiconductor film is interposed between the gate electrode and the semiconductor film can be used as the transistor M. For example, a conductive film which is electrically connected to a wiring which can supply the same potential as the gate electrode of the transistor M can be used for the conductive film.

The capacitor C12 includes a first electrode electrically connected to the second electrode of the transistor used for the switch SW2, and a second electrode electrically connected to the first electrode of the transistor M. .

Note that the first electrode of the display element 750 (i, j) is electrically connected to the second electrode of the transistor used for the switch SW1. The second electrode of the display element 750 (i, j) is electrically connected to the wiring VCOM1. Thus, the display element 750 (i, j) can be driven.

Further, the third electrode 551 (i, j) of the display element 550 (i, j) is electrically connected to the second electrode of the transistor M, and the fourth electrode 552 of the display element 550 (i, j) is connected. Is electrically connected to the fourth conductive film VCOM2. Thus, the display element 550 (i, j) can be driven.

<Display element 750 (i, j)>
For example, a display element having a function of controlling reflection or transmission of light can be used for the display element 750 (i, j). Specifically, a reflective liquid crystal display element can be used for the display element 750 (i, j). Alternatively, a shutter type MEMS display element or the like can be used. By using a reflective display element, power consumption of a display panel can be suppressed.

The display element 750 (i, j) includes a first electrode 751 (i, j), a second electrode 752, and a layer 753 including a liquid crystal material. The second electrode 752 is provided so that an electric field for controlling alignment of a liquid crystal material is formed between the second electrode 752 and the first electrode 751 (i, j) (FIGS. 25A and 26A). reference).

Note that the display element 750 (i, j) includes an alignment film AF1 and an alignment film AF2. The alignment film AF2 includes a region which sandwiches a layer 753 containing a liquid crystal material between the alignment film AF2 and the alignment film AF1.

<Display element 550 (i, j)>
For example, a display element having a function of emitting light can be used for the display element 550 (i, j). Specifically, an organic EL element or the like can be used.

The display element 550 (i, j) has a function of emitting light toward the insulating film 501C (see FIG. 25A).

The display element 550 (i, j) is arranged so that display using the display element 550 (i, j) can be visually recognized in a part of the range in which display using the display element 750 (i, j) can be visually recognized. Is established. For example, the direction in which the external light is incident and reflected on the display element 750 (i, j) that controls the intensity of the reflection of the external light to display image information is indicated by a broken-line arrow in the drawing (FIG. 26A). reference). In addition, the direction in which the display element 550 (i, j) emits light in a part of the range in which display using the display element 750 (i, j) can be visually recognized is indicated by a solid line arrow in the drawing (FIG. 25 ( A)).

The display element 550 (i, j) includes a third electrode 551 (i, j), a fourth electrode 552, and a light-emitting layer 553 (j) (see FIG. 25A).

The fourth electrode 552 includes a region overlapping with the third electrode 551 (i, j).

The light-emitting layer 553 (j) includes a region sandwiched between the third electrode 551 (i, j) and the fourth electrode 552.

The third electrode 551 (i, j) is electrically connected to the pixel circuit 530 (i, j) at the connection portion 522. Note that the third electrode 551 (i, j) is electrically connected to the third conductive film ANO, and the fourth electrode 552 is electrically connected to the fourth conductive film VCOM2 (FIG. 28). reference).

<Interlayer>
Further, the display panel described in this embodiment includes an intermediate film 754A, an intermediate film 754B, and an intermediate film 754C.

The intermediate film 754A includes a region where the first conductive film is sandwiched between the intermediate film 754A and the insulating film 501C, and the intermediate film 754A includes a region that is in contact with the first electrode 751 (i, j). The intermediate film 754B includes a region in contact with the conductive film 511B. The intermediate film 754C includes a region in contact with the conductive film 511C.

<Insulating film 501A>
The display panel described in this embodiment includes an insulating film 501A (see FIG. 25A).

The insulating film 501A includes a first opening 592A, a second opening 592B, and an opening 592C (see FIG. 25A or FIG. 26A).

The first opening 592A includes a region overlapping with the intermediate film 754A and the first electrode 751 (i, j) or a region overlapping with the intermediate film 754A and the insulating film 501C.

The second opening 592B includes a region overlapping with the intermediate film 754B and the conductive film 511B.

The opening 592C includes a region overlapping with the intermediate film 754C and the conductive film 511C.

The insulating film 501A includes a region where the insulating film 501C is interposed between the insulating film 501A and the conductive film 511B. The insulating film 501A is in contact with the conductive film 511B in the opening 591B of the insulating film 501C. The insulating film 501A is in contact with the conductive film 511C in the opening 591C of the insulating film 501C.

The insulating film 501A includes a region sandwiched between the intermediate film 754A and the insulating film 501C along the periphery of the first opening 592A, and the insulating film 501A extends along the periphery of the second opening 592B. A region sandwiched between the intermediate film 754B and the conductive film 511B is provided.

<Insulating film 521, insulating film 528, insulating film 518, insulating film 516, and the like>
The insulating film 521 includes a region sandwiched between the pixel circuit 530 (i, j) and the display element 550 (i, j).

The insulating film 528 is provided between the insulating film 521 and the substrate 570, and has an opening in a region overlapping with the display element 550 (i, j).

The insulating film 528 formed along the periphery of the third electrode 551 (i, j) prevents a short circuit between the third electrode 551 (i, j) and the fourth electrode 552.

The insulating film 518 includes a region sandwiched between the insulating film 521 and the pixel circuit 530 (i, j).

The insulating film 516 includes a region sandwiched between the insulating film 518 and the pixel circuit 530 (i, j).

<Terminals>
Further, the display panel described in this embodiment includes a terminal 519B and a terminal 519C.

The terminal 519B includes a conductive film 511B and an intermediate film 754B, and the intermediate film 754B includes a region in contact with the conductive film 511B. The terminal 519B is electrically connected to, for example, the signal line S1 (j).

The terminal 519C includes a conductive film 511C and an intermediate film 754C, and the intermediate film 754C includes a region in contact with the conductive film 511C. The conductive film 511C is electrically connected to, for example, the wiring VCOM1.

The conductive material CP is sandwiched between the terminal 519C and the second electrode 752, and has a function of electrically connecting the terminal 519C and the second electrode 752. For example, conductive particles can be used for the conductive material CP.

<Substrate etc.>
The display panel described in this embodiment includes a substrate 570 and a substrate 770.

The substrate 770 includes a region overlapping with the substrate 570. The substrate 770 includes a region where the functional layer 520 is sandwiched between the substrate 570 and the substrate 570.

<Bonding layer, sealing material, structure, etc.>
The display panel described in this embodiment includes a bonding layer 505, a sealant 705, and a structure KB1.

The bonding layer 505 includes a region sandwiched between the functional layer 520 and the substrate 570, and has a function of bonding the functional layer 520 and the substrate 570.

The sealant 705 includes a region sandwiched between the functional layer 520 and the substrate 770, and has a function of bonding the functional layer 520 and the substrate 770.

The structure KB1 has a function of providing a predetermined gap between the functional layer 520 and the substrate 770.

<Functional films, etc.>
The display panel described in this embodiment includes a light-blocking film BM, an insulating film 771, a functional film 770P, and a functional film 770D. Further, a coloring film CF1 and a coloring film CF2 are provided.

The light-blocking film BM has an opening in a region overlapping with the display element 750 (i, j). The coloring film CF2 is provided between the insulating film 501C and the display element 550 (i, j), and includes a region overlapping with the opening 751H (see FIG. 25A).

The insulating film 771 includes a region sandwiched between the coloring film CF1 and the layer 753 including a liquid crystal material or between the light-blocking film BM and the layer 753 including a liquid crystal material. Thereby, unevenness based on the thickness of the colored film CF1 can be made flat. Alternatively, diffusion of impurities from the light-blocking film BM or the coloring film CF1 to the layer 753 containing a liquid crystal material can be suppressed.

The functional film 770P includes a region overlapping with the display element 750 (i, j).

The functional film 770D includes a region overlapping with the display element 750 (i, j). The functional film 770D is provided so as to sandwich the substrate 770 between the functional film 770D and the display element 750 (i, j). Thereby, for example, light reflected by the display element 750 (i, j) can be diffused.

<Example of component>
The display panel 700_3 includes a substrate 570, a substrate 770, a structure body KB1, a sealing material 705, or a bonding layer 505.

Further, the display panel 700_3 includes the functional layer 520, the insulating film 521, or the insulating film 528.

The display panel 700_3 includes a signal line S1 (j), a signal line S2 (j), a scan line G1 (i), a scan line G2 (i), a wiring CSCOM, or a third conductive film ANO.

Further, the display panel 700_3 includes a first conductive film or a second conductive film.

The display panel 700_3 includes a terminal 519B, a terminal 519C, a conductive film 511B, or a conductive film 511C.

Further, the display panel 700_3 includes the pixel circuit 530 (i, j) or the switch SW1.

The display panel 700_3 includes a display element 750 (i, j), a first electrode 751 (i, j), a light reflecting film, an opening, a layer 753 including a liquid crystal material, or a second electrode 752.

The display panel 700_3 includes an alignment film AF1, an alignment film AF2, a coloring film CF1, a coloring film CF2, a light-blocking film BM, an insulating film 771, a functional film 770P, or a functional film 770D.

The display panel 700_3 includes a display element 550 (i, j), a third electrode 551 (i, i), a fourth electrode 552, or a light-emitting layer 553 (j).

Further, the display panel 700_3 includes an insulating film 501A and an insulating film 501C.

Further, the display panel 700_3 includes a driver circuit GD or a driver circuit SD.

<Structure KB1>
For example, an organic material, an inorganic material, or a composite material of an organic material and an inorganic material can be used for the structure KB1 or the like. Thus, a predetermined interval can be provided between the components sandwiching the structure KB1 and the like.

Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, an acrylic resin, or the like, or a composite material of a plurality of resins selected therefrom can be used for the structure KB1. Further, it may be formed using a photosensitive material.

<Sealing material 705>
An inorganic material, an organic material, a composite material of an inorganic material and an organic material, or the like can be used for the sealant 705 or the like.

For example, an organic material such as a heat-meltable resin or a curable resin can be used for the sealant 705 or the like.

For example, an organic material such as a reaction-curable adhesive, a light-curable adhesive, a thermosetting adhesive, and / or an anaerobic adhesive can be used for the sealant 705 or the like.

Specifically, an adhesive containing an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a polyimide resin, an imide resin, a PVC (polyvinyl chloride) resin, a PVB (polyvinyl butyral) resin, an EVA (ethylene vinyl acetate) resin, or the like Can be used for the sealing material 705 and the like.

<Joining layer 505>
For example, a material that can be used for the sealant 705 can be used for the bonding layer 505.

<Insulating film 521>
For example, a material used for the insulating films 521A and 521B can be used.

<Insulating film 528>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 528 and the like. Specifically, a film containing polyimide with a thickness of 1 μm can be used for the insulating film 528.

<Insulating film 501A>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 501A. Further, for example, a material having a function of supplying hydrogen can be used for the insulating film 501A.

Specifically, a material in which a material containing silicon and oxygen and a material containing silicon and nitrogen are stacked can be used for the insulating film 501A. For example, a material having a function of releasing hydrogen by heating or the like and supplying the released hydrogen to another structure can be used for the insulating film 501A. Specifically, a material having a function of releasing hydrogen taken in during the manufacturing process by heating or the like and supplying the hydrogen to another structure can be used for the insulating film 501A.

For example, a film containing silicon and oxygen formed by a chemical vapor deposition method using silane or the like as a source gas can be used for the insulating film 501A.

Specifically, a material in which a material containing silicon and oxygen with a thickness of 200 nm to 600 nm and a material containing silicon and nitrogen with a thickness of about 200 nm are stacked can be used for the insulating film 501A.

<Insulating film 501C>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 501C. Specifically, a material containing silicon and oxygen can be used for the insulating film 501C. Thus, diffusion of impurities into the pixel circuit, the display element 550 (i, j), and the like can be suppressed.

For example, a 200-nm-thick film containing silicon, oxygen, and nitrogen can be used for the insulating film 501C.

<Intermediate film 754A, intermediate film 754B, intermediate film 754C>
For example, a film having a thickness of 10 nm to 500 nm, preferably 10 nm to 100 nm can be used for the intermediate film 754A, the intermediate film 754B, or the intermediate film 754C. Note that, in this specification, the intermediate film 754A, the intermediate film 754B, or the intermediate film 754C is referred to as an intermediate film.

For example, a material having a function of transmitting or supplying hydrogen can be used for the intermediate film.

For example, a material having conductivity can be used for the intermediate film.

For example, a material having optical transparency can be used for the intermediate film.

Specifically, a material containing indium and oxygen, a material containing indium, gallium, zinc, and oxygen, a material containing indium, tin, and oxygen, or the like can be used for the intermediate film. Note that these materials have a function of transmitting hydrogen.

Specifically, a 50-nm-thick film or a 100-nm-thick film containing indium, gallium, zinc, and oxygen can be used for the intermediate film.

Note that a material in which a film functioning as an etching stopper is stacked can be used for the intermediate film. Specifically, a laminated material in which a 50-nm-thick film containing indium, gallium, zinc, and oxygen, and a 20-nm-thick film containing indium, tin, and oxygen are stacked in this order can be used for the intermediate film. it can.

<Wiring, terminal, conductive film>
A material having conductivity can be used for the wiring and the like. Specifically, a material having conductivity is formed of a signal line S1 (j), a signal line S2 (j), a scanning line G1 (i), a scanning line G2 (i), a wiring CSCOM, a third conductive film ANO, It can be used for the terminal 519B, the terminal 519C, the conductive film 511B, the conductive film 511C, or the like.

For example, an inorganic conductive material, an organic conductive material, a metal, a conductive ceramic, or the like can be used for the wiring and the like.

Specifically, a metal element selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, or manganese can be used for the wiring and the like. . Alternatively, an alloy containing the above-described metal element can be used for a wiring or the like. In particular, an alloy of copper and manganese is suitable for fine processing using a wet etching method.

Specifically, a two-layer structure in which a titanium film is stacked over an aluminum film, a two-layer structure in which a titanium film is stacked over a titanium nitride film, a two-layer structure in which a tungsten film is stacked over a titanium nitride film, a tantalum nitride film, or A two-layer structure in which a tungsten film is stacked over a tungsten nitride film, a titanium film, a three-layer structure in which an aluminum film is stacked over the titanium film, and a titanium film is further formed thereon can be used for wiring or the like. .

Specifically, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used for the wiring and the like.

Specifically, a film containing graphene or graphite can be used for a wiring or the like.

For example, a film including graphene oxide is formed, and the film including graphene oxide is reduced; thus, a film including graphene can be formed. Examples of the method of reduction include a method of applying heat and a method of using a reducing agent.

For example, a film including metal nanowires can be used for wiring or the like. Specifically, a nanowire containing silver can be used.

Specifically, a conductive polymer can be used for a wiring or the like.

Note that, for example, the terminal 519B and the flexible printed circuit board FPC1 can be electrically connected using the conductive material ACF1.

<First conductive film, second conductive film>
For example, a material that can be used for a wiring or the like can be used for the first conductive film or the second conductive film.

Further, the first electrode 751 (i, j), a wiring, or the like can be used for the first conductive film.

Alternatively, a conductive film 512B or a wiring which functions as a source electrode or a drain electrode of a transistor which can be used for the switch SW1 can be used for the second conductive film.

<Display element 750 (i, j)>
For example, a display element having a function of controlling reflection or transmission of light can be used for the display element 750 (i, j). For example, a structure in which a liquid crystal element and a polarizing plate are combined, a shutter type MEMS display element, or the like can be used. Specifically, a reflective liquid crystal display element can be used for the display element 750 (i, j). By using a reflective display element, power consumption of a display panel can be suppressed.

For example, an IPS (In-Plane-Switching) mode, a TN (Twisted Nematic) mode, an FFS (Fringe Field Switching) mode, an ASM (Axially Symmetrically Aligned Micro-encryption, Microelectronics, Limited, Electronic, Co-Optic, Ripple, Digital, Co-Optic) A liquid crystal element that can be driven by a driving method such as a Crystal (Crystal) mode or an AFLC (Anti Ferroelectric Liquid Crystal) mode can be used.

In addition, for example, a vertical alignment (VA) mode, specifically, an MVA (Multi-Domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment) mode, an ECB (Electrically Controlled Vibration Alignment, Ref. A liquid crystal element which can be driven by a driving method such as an (Advanced Super-View) mode can be used.

The display element 750 (i, j) includes a first electrode 751 (i, j), a second electrode 752, and a layer 753 including a liquid crystal material. The layer 753 including a liquid crystal material includes a liquid crystal material whose orientation can be controlled using a voltage between the first electrode 751 (i, j) and the second electrode 752. For example, an electric field in a thickness direction (also referred to as a vertical direction) of the layer 753 containing a liquid crystal material and a direction intersecting with the vertical direction (also referred to as a horizontal direction or an oblique direction) can be used as an electric field for controlling the alignment of the liquid crystal material. it can.

<Layer 753 containing liquid crystal material>
For example, a thermotropic liquid crystal, a low molecular liquid crystal, a polymer liquid crystal, a polymer dispersed liquid crystal, a ferroelectric liquid crystal, an antiferroelectric liquid crystal, or the like can be used for the layer containing a liquid crystal material. Alternatively, a liquid crystal material having a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, or the like can be used. Alternatively, a liquid crystal material exhibiting a blue phase can be used.

<First electrode 751 (i, j)>
For example, a material used for a wiring or the like can be used for the first electrode 751 (i, j). Specifically, a light reflecting film can be used for the first electrode 751 (i, j). For example, a material in which a conductive film having light transmittance and a light reflecting film having an opening are stacked can be used for the first electrode 751 (i, j).

<Light reflection film>
For example, a material that reflects visible light can be used for the light reflecting film. Specifically, a material containing silver can be used for the light reflecting film. For example, a material containing silver, palladium, or the like, or a material containing silver, copper, or the like can be used for the light reflecting film.

The light reflecting film reflects light transmitted through the layer 753 containing a liquid crystal material, for example. Thus, the display element 750 (i, j) can be a reflective liquid crystal element. Further, for example, a material having unevenness on the surface can be used for the light reflection film. Accordingly, incident light is reflected in various directions, and white display can be performed.

For example, the first conductive film, the first electrode 751 (i, j), or the like can be used as the light reflecting film.

For example, a film including a region interposed between the layer 753 containing a liquid crystal material and the first electrode 751 (i, j) can be used as the light reflecting film. Alternatively, a light reflecting film can be used as a film including a region where the first electrode 751 (i, j) having light transmittance is sandwiched between the layer 753 containing a liquid crystal material and the layer 753 containing a liquid crystal material.

The light reflection film has, for example, a shape in which a region that does not block light emitted from the display element 550 (i, j) is formed.

For example, a shape having one or more openings can be used for the light reflecting film.

A shape such as a polygon, a square, an ellipse, a circle, or a cross can be used for the opening. In addition, an elongated strip, slit, or checkerboard shape can be used for the opening 751H.

If the value of the ratio of the total area of the openings 751H to the total area of the non-openings is too large, the display using the display element 750 (i, j) becomes dark.

If the value of the ratio of the total area of the openings 751H to the total area of the non-openings is too small, the display using the display element 550 (i, j) will be dark. Alternatively, the reliability of the display element 550 (i, j) may be impaired.

For example, the opening 751H of the pixel 702 (i, j + 1) adjacent to the pixel 702 (i, j) is in the row direction passing through the opening 751H of the pixel 702 (i, j) (the direction indicated by the arrow R1 in the figure). (See FIG. 29 (A)). Alternatively, for example, the opening portion 751H of the pixel 702 (i + 1, j) adjacent to the pixel 702 (i, j) passes through the opening portion 751H of the pixel 702 (i, j) in the column direction (in FIG. (See the direction shown in FIG. 29B).

For example, the opening 751H of the pixel 702 (i, j + 2) is provided on a straight line extending in the row direction and passing through the opening 751H of the pixel 702 (i, j) (see FIG. 29A). The opening 751H of the pixel 702 (i, j + 1) is arranged on a straight line orthogonal to the straight line between the opening 751H of the pixel 702 (i, j) and the opening 751H of the pixel 702 (i, j + 2). Is established.

Alternatively, for example, the opening 751H of the pixel 702 (i + 2, j) is provided on a straight line extending in the column direction and passing through the opening 751H of the pixel 702 (i, j) (see FIG. 29B). . For example, the opening 751H of the pixel 702 (i + 1, j) is on a straight line orthogonal to the straight line between the opening 751H of the pixel 702 (i, j) and the opening 751H of the pixel 702 (i + 2, j). It is arranged in.

Note that, for example, a material having a shape whose end is cut off can be used for the light reflecting film so that a region 751E which does not block light emitted from the display element 550 (i, j) is formed. (See FIG. 29C). Specifically, the first electrode 751 (i, j) whose end is cut off so as to shorten the column direction (the direction indicated by the arrow C1 in the drawing) can be used as the light reflecting film.

<Second electrode 752>
For example, a material having conductivity can be used for the second electrode 752. A material having a light-transmitting property with respect to visible light can be used for the second electrode 752.

For example, a conductive oxide, a metal film thin enough to transmit light, or a metal nanowire can be used for the second electrode 752.

Specifically, a conductive oxide containing indium can be used for the second electrode 752. Alternatively, a metal thin film having a thickness of greater than or equal to 1 nm and less than or equal to 10 nm can be used for the second electrode 752. Further, a metal nanowire containing silver can be used for the second electrode 752.

Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, zinc oxide to which aluminum is added, or the like can be used for the second electrode 752.

<Alignment film AF1, alignment film AF2>
For example, a material containing polyimide or the like can be used for the alignment film AF1 or the alignment film AF2. Specifically, a material formed using a rubbing treatment or a photo-alignment technique so that the liquid crystal material is aligned in a predetermined direction can be used.

For example, a film containing soluble polyimide can be used for the alignment film AF1 or the alignment film AF2. Thereby, the temperature required for forming the alignment film AF1 or the alignment film AF2 can be reduced. As a result, damage to other components when forming the alignment film AF1 or the alignment film AF2 can be reduced.

<Colored film CF1, colored film CF2>
A material that transmits light of a predetermined color can be used for the coloring film CF1 or the coloring film CF2. Thus, the coloring film CF1 or the coloring film CF2 can be used as, for example, a color filter. For example, a material that transmits blue, green, or red light can be used for the coloring film CF1 or the coloring film CF2. Further, a material that transmits yellow light, white light, or the like can be used for the coloring film CF1 or the coloring film CF2.

Note that a material having a function of converting irradiated light into light of a predetermined color can be used for the coloring film CF2. Specifically, quantum dots can be used for the colored film CF2. Thus, a display with high color purity can be performed.

<Light shielding film BM>
A material that prevents light transmission can be used for the light-blocking film BM. Thereby, the light shielding film BM can be used for, for example, a black matrix.

<Insulating film 771>
For example, polyimide, epoxy resin, acrylic resin, or the like can be used for the insulating film 771.

<Functional films 770P and 770D>
For example, an anti-reflection film, a polarizing film, a retardation film, a light diffusion film, a light condensing film, or the like can be used for the functional film 770P or the functional film 770D.

Specifically, a film containing a dichroic dye can be used for the functional film 770P or 770D. Alternatively, a material having a columnar structure having an axis along a direction intersecting with the surface of the base material can be used for the functional film 770P or the functional film 770D. Thereby, light can be easily transmitted in a direction along the axis and easily scattered in other directions.

Further, an antistatic film for suppressing adhesion of dust, a water-repellent film for preventing adhesion of dirt, a hard coat film for suppressing generation of scratches due to use, and the like can be used for the functional film 770P.

Specifically, a circularly polarizing film can be used for the functional film 770P. Further, a light diffusion film can be used for the functional film 770D.

<Display element 550 (i, j)>
For example, a light-emitting element can be used for the display element 550 (i, j). Specifically, an organic electroluminescence element, an inorganic electroluminescence element, a light-emitting diode, or the like can be used for the display element 550 (i, j).

For example, a light-emitting organic compound can be used for the light-emitting layer 553 (j).

For example, quantum dots can be used for the light-emitting layer 553 (j). Thereby, light of a bright color with a narrow half-value width can be emitted.

For example, a light-emitting layer 553 (Laminated material that is stacked to emit blue light, stacked to emit green light, or stacked to emit red light, or the like). j) can be used.

For example, a band-shaped laminated material long in the column direction along the signal line S2 (j) can be used for the light-emitting layer 553 (j).

Further, for example, a layered material which is stacked so as to emit white light can be used for the light-emitting layer 553 (j). Specifically, a light-emitting layer containing a fluorescent material that emits blue light, a layer containing a material other than the fluorescent material that emits green and red light, or a layer containing a material other than the fluorescent material that emits yellow light Can be used for the light emitting layer 553 (j).

For example, a material that can be used for a wiring or the like can be used for the third electrode 551 (i, j).

For example, a material having a light-transmitting property with respect to visible light, which is selected from materials which can be used for a wiring or the like, can be used for the third electrode 551 (i, j).

Specifically, the third electrode 551 (i) is formed using a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like. , J). Alternatively, a metal film thin enough to transmit light can be used for the third electrode 551 (i, j). Alternatively, a metal film which transmits part of light and reflects another part of light can be used for the third electrode 551 (i, j). Thus, a microresonator structure can be provided in the display element 550 (i, j). As a result, light of a predetermined wavelength can be extracted more efficiently than other light.

For example, a material that can be used for a wiring or the like can be used for the fourth electrode 552. Specifically, a light-reflective material, that is, a material having reflectivity with respect to visible light can be used for the fourth electrode 552.

<Drive circuit GD>
For example, a structure different from that of the transistor that can be used for the switch SW1 can be used for the transistor MD. Specifically, a transistor including the conductive film 524 can be used for the transistor MD (see FIG. 25B).

Note that the same structure as the transistor M can be used for the transistor MD.

The structure of the display panel 700_3 (see FIGS. 25A and 26A) is different from the structure of the display panel 700 (see FIGS. 4A and 5) in that the display element 750 (i, j) is provided. This increases the number of masks required for the process. When the display panel has the structure described in Embodiment Modes 1 to 3, the number of steps is not increased even when a minute optical resonator is formed, which is effective in reducing the manufacturing cost.

(Embodiment 9)
In this embodiment, a structure of an information processing device of one embodiment of the present invention will be described with reference to FIGS.

FIG. 30A is a block diagram illustrating a structure of an information processing device of one embodiment of the present invention. FIGS. 30B and 30C are projection views illustrating an example of the external appearance of the information processing apparatus 200. FIG.

FIG. 31 is a flowchart illustrating a program of one embodiment of the present invention. FIG. 31A is a flowchart illustrating main processing of a program according to one embodiment of the present invention, and FIG. 31B is a flowchart illustrating interrupt processing.

FIG. 32 is a diagram illustrating a program of one embodiment of the present invention. FIG. 32A is a flowchart illustrating interrupt processing of a program according to one embodiment of the present invention, and FIG. 32B is a timing chart illustrating operation of the information processing device according to one embodiment of the present invention.

<Configuration Example 1 of Information Processing Device>
An information processing device 200 described in this embodiment includes an input / output device 220 and an arithmetic device 210 (see FIG. 30A). The input / output device is electrically connected to the arithmetic unit 210. The information processing device 200 can include a housing (see FIG. 30B or FIG. 30C).

The input / output device 220 includes a display unit 230 and an input unit 240 (see FIG. 30A). The input / output device 220 includes a detection unit 250. In addition, the input / output device 220 may include a communication unit 290.

The input / output device 220 has a function of supplying the image information V1 or the control information SS, and has a function of supplying the position information P1 or the detection information SE1.

The arithmetic unit 210 has a function of receiving the position information P1 or the detection information SE1. The arithmetic unit 210 has a function of supplying the image information V1. The arithmetic device 210 has a function of operating based on, for example, the position information P1 or the detection information SE1.

Note that the housing has a function of housing the input / output device 220 or the arithmetic device 210. Alternatively, the housing has a function of supporting the display portion 230 or the arithmetic device 210.

The display unit 230 has a function of displaying an image based on the image information V1. The display unit 230 has a function of displaying an image based on the control information SS.

The input unit 240 has a function of supplying the position information P1.

The detection unit 250 has a function of supplying the detection information SE1. The detection unit 250 has, for example, a function of detecting illuminance of an environment in which the information processing device 200 is used, and a function of supplying illuminance information.

Thus, the information processing apparatus can operate in an environment where the information processing apparatus is used, by grasping the intensity of light received by the housing of the information processing apparatus. Alternatively, the user of the information processing device can select a display method. As a result, it is possible to provide a novel information processing device that is excellent in convenience or reliability.

In the following, individual components that constitute the information processing apparatus will be described. Note that these components cannot be clearly separated, and one component may also serve as another component or include a part of another component. For example, a touch panel in which a touch sensor is overlaid on a display panel is both a display unit and an input unit.

<Configuration example>
The information processing device 200 of one embodiment of the present invention includes a housing or an arithmetic device 210.

The arithmetic device 210 includes an arithmetic unit 211, a storage unit 212, a transmission path 214, and an input / output interface 215.

The information processing device of one embodiment of the present invention includes the input / output device 220.

The input / output device 220 includes a display unit 230, an input unit 240, a detection unit 250, and a communication unit 290.

<Information processing device>
The information processing device of one embodiment of the present invention includes the arithmetic device 210 or the input / output device 220.

<Computing device 210>
The arithmetic device 210 includes an arithmetic unit 211 and a storage unit 212. Further, a transmission path 214 and an input / output interface 215 are provided.

<Calculation unit 211>
The operation unit 211 has a function of executing a program, for example.

<Storage unit 212>
The storage unit 212 has a function of storing, for example, a program executed by the calculation unit 211, initial information, setting information, an image, and the like.

Specifically, a hard disk, a flash memory, a memory using a transistor including an oxide semiconductor, or the like can be used.

<Input / output interface 215, transmission path 214>
The input / output interface 215 includes a terminal or a wiring, supplies information, and has a function of being supplied with information. For example, it can be electrically connected to the transmission path 214. Further, it can be electrically connected to the input / output device 220.

The transmission path 214 includes a wiring, has a function of supplying information, and has a function of being supplied with information. For example, it can be electrically connected to the input / output interface 215. Further, it can be electrically connected to the arithmetic unit 211 or the storage unit 212.

<I / O device 220>
The input / output device 220 includes a display unit 230, an input unit 240, a detection unit 250, or a communication unit 290. For example, the input / output device described in Embodiment 6 can be used. Thereby, power consumption can be reduced.

<Display unit 230>
The display unit 230 includes a control unit 238, a drive circuit GD, a drive circuit SD, and a display panel 700 (see FIG. 17). For example, the display device described in Embodiment 5 can be used for the display portion 230.

<Input unit 240>
Various human interfaces and the like can be used for the input unit 240 (see FIG. 30).

For example, a keyboard, a mouse, a touch sensor, a microphone, a camera, or the like can be used for the input unit 240. Note that a touch sensor including a region overlapping with the display portion 230 can be used. An input / output device including the display unit 230 and a touch sensor including an area overlapping the display unit 230 can be referred to as a touch panel or a touch screen.

For example, the user can perform various gestures (tap, drag, swipe, pinch-in, etc.) using a finger touching the touch panel as a pointer.

For example, the arithmetic device 210 may analyze information such as the position or trajectory of the finger touching the touch panel and determine that a specific gesture has been supplied when the analysis result satisfies a predetermined condition. Accordingly, the user can supply a predetermined operation command associated with the predetermined gesture in advance using the gesture.

For example, the user can supply a “scroll command” for changing the display position of the image information by using a gesture of moving a finger in contact with the touch panel along the touch panel.

<Detector 250>
The detection unit 250 has a function of detecting a surrounding state and supplying detection information. Specifically, illuminance information, posture information, pressure information, position information, and the like can be supplied.

For example, a light detector, a posture detector, an acceleration sensor, a direction sensor, a GPS (Global Positioning System) signal receiving circuit, a pressure sensor, a temperature sensor, a humidity sensor, a camera, or the like can be used for the detection unit 250.

<Communication unit 290>
The communication unit 290 has a function of supplying information to a network and acquiring information from the network.

<Program>
The program of one embodiment of the present invention includes the following steps (see FIG. 31A).

[First step]
In the first step, the settings are initialized (see FIGS. 31A and 31).

For example, predetermined image information to be displayed at the time of activation, a predetermined mode for displaying the image information, and information for specifying a predetermined display method for displaying the image information are acquired from the storage unit 212. Specifically, one still image information or another moving image information can be used as predetermined image information. Further, the first mode or the second mode can be used for a predetermined mode.

[Second step]
In the second step, interrupt processing is permitted (see FIGS. 31A and S2). The arithmetic device to which the interrupt processing is permitted can perform the interrupt processing in parallel with the main processing. The arithmetic unit that has returned to the main process from the interrupt process can reflect the result obtained by performing the interrupt process on the main process.

When the value of the counter is the initial value, the arithmetic unit may perform an interrupt process, and when returning from the interrupt process, the counter may have a value other than the initial value. As a result, interrupt processing can always be performed after the program is started.

[Third step]
In the third step, image information is displayed using a predetermined mode or a predetermined display method selected in the first step or the interrupt processing (see FIGS. 31A and 31). The predetermined mode specifies a mode for displaying image information, and the predetermined display method specifies a method for displaying image information. Further, for example, it can be used for information for displaying the image information V1 or the information V12.

For example, the method of displaying the image information V1 can be associated with the first mode. Alternatively, another method of displaying the image information V1 can be associated with the second mode. Thereby, a display method can be selected based on the selected mode.

<First mode>
Specifically, a method of supplying a selection signal to one scanning line at a frequency of 30 Hz or more, preferably 60 Hz or more, and displaying based on the selection signal can be associated with the first mode.

For example, when the selection signal is supplied at a frequency of 30 Hz or more, preferably 60 Hz or more, the motion of the moving image can be smoothly displayed.

For example, when the image is updated at a frequency of 30 Hz or more, preferably 60 Hz or more, an image that changes so as to smoothly follow the operation of the user can be displayed on the information processing apparatus 200 being operated by the user.

<Second mode>
Specifically, a method of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute, and performing display based on the selection signal is described in a second mode. Can be associated with

When the selection signal is supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute, a display in which flicker or flicker is suppressed can be performed. Further, power consumption can be reduced.

For example, when the information processing device 200 is used for a timepiece, the display can be updated once a second or once a minute.

By the way, for example, when a light emitting element is used as a display element, image information can be displayed by causing the light emitting element to emit light in a pulsed manner. Specifically, the organic EL element emits light in a pulsed manner, and the afterglow can be used for display. Since the organic EL element has excellent frequency characteristics, in some cases, driving time of the light-emitting element can be reduced and power consumption can be reduced. Alternatively, since heat generation is suppressed, deterioration of the light-emitting element can be reduced in some cases.

[Fourth step]
In the fourth step, when the end instruction is supplied, the process proceeds to the fifth step, and when the end instruction is not supplied, the process proceeds to the third step (see FIGS. 31A and S4). ).

For example, the termination instruction supplied in the interrupt processing may be used for the determination.

[Fifth step]
In the fifth step, the process ends (see FIGS. 31A and 31).

<Interrupt processing>
The interrupt processing includes the following sixth to eighth steps (see FIG. 31B).

[Sixth step]
In the sixth step, for example, the illuminance of the environment in which the information processing device 200 is used is detected using the detection unit 250 (see FIGS. 31B and S6). Note that the color temperature or chromaticity of ambient light may be detected instead of the illuminance of the environment.

[Seventh step]
In the seventh step, a display method is determined based on the detected illuminance information (see FIGS. 31B and S7). For example, the brightness of the display is determined not to be too dark or too bright.

If the color temperature of the ambient light and the chromaticity of the ambient light are detected in the sixth step, the color of the display may be adjusted.

[Eighth Step]
In the eighth step, the interrupt processing ends (see FIGS. 31B and S8).

<Configuration Example 2 of Information Processing Apparatus>
Another structure of the information processing device of one embodiment of the present invention will be described with reference to FIG.

FIG. 32A is a flowchart illustrating a program of one embodiment of the present invention. FIG. 32A is a flowchart illustrating an interrupt process different from the interrupt process shown in FIG.

Note that the configuration example 3 of the information processing apparatus is different from the interrupt processing described with reference to FIG. 31B in that a step of changing the mode based on the supplied predetermined event is included in the interrupt processing. . Here, different portions will be described in detail, and the above description will be referred to portions where a similar structure can be used.

<Interrupt processing>
The interrupt processing includes the following sixth to eighth steps (see FIG. 32A).

[Sixth step]
In the sixth step, when a predetermined event is supplied, the process proceeds to a seventh step, and when the predetermined event is not supplied, the process proceeds to an eighth step (see FIGS. 32A and 32). ). For example, it can be used as a condition whether or not a predetermined event is supplied during a predetermined period. Specifically, the predetermined period can be 5 seconds or less, 1 second or less, or 0.5 seconds or less, preferably 0.1 seconds or less, and longer than 0 seconds.

[Seventh step]
In the seventh step, the mode is changed (see FIGS. 32 (A) and (U7)). Specifically, when the first mode has been selected, the second mode is selected, and when the second mode has been selected, the first mode is selected.

For example, the display mode can be changed for a part of the display unit 230. Specifically, the display mode can be changed in a region to which the drive circuit GDB of the display portion 230 including the drive circuit GDA, the drive circuit GDB, the drive circuit GDC, and the drive circuit GDD supplies a selection signal (see FIG. B)).

For example, when a predetermined event is supplied to the input section 240 of the area to which the drive circuit GDB supplies the selection signal, the display mode of the area can be changed. Specifically, the frequency of the selection signal supplied by the drive circuit GDB can be changed. Thus, for example, the display of the region to which the drive circuit GDB supplies the selection signal can be updated without operating the drive circuits GDA, GDC, and GDD. Alternatively, power consumed by the driver circuit can be suppressed.

[Eighth Step]
In the eighth step, the interrupt processing ends (see FIGS. 32A and 32U). Note that the interrupt process may be repeatedly executed while the main process is being executed.

<Predetermined event>
For example, an event such as "click" or "drag" supplied using a pointing device such as a mouse, an event such as "tap", "drag" or "swipe" supplied to a touch panel using a finger or the like as a pointer Can be used.

In addition, for example, an argument of a command associated with a predetermined event can be given using a position of a slide bar indicated by a pointer, a swipe speed, a drag speed, and the like.

For example, the information detected by the detection unit 250 can be compared with a preset threshold, and the comparison result can be used for an event.

Specifically, a pressure-sensitive detector or the like in contact with a button or the like that can be pushed into the housing can be used as the detection unit 250.

<Instruction to associate with a predetermined event>
For example, a termination instruction can be associated with a particular event.

For example, a “page turning command” for switching the display from one displayed image information to another image information can be associated with a predetermined event. It should be noted that an argument for determining a page turning speed and the like used when executing the “page turning command” can be given using a predetermined event.

For example, a "scroll command" for moving the display position of a part where one piece of image information is displayed and displaying another part continuous with the part can be associated with a predetermined event. Note that an argument that determines the speed at which the display position used to execute the “scroll command” is moved can be given using a predetermined event.

For example, a command for setting a display method or a command for generating image information can be associated with a predetermined event. Note that an argument for determining the brightness of an image to be generated can be associated with a predetermined event. Further, the argument for determining the brightness of the image to be generated may be determined based on the brightness of the environment detected by the detection unit 250.

For example, a command to acquire information distributed using a push-type service using the communication unit 290 can be associated with a predetermined event.

Note that the presence or absence of a qualification to acquire information may be determined using the position information detected by the detection unit 250. Specifically, when the user is inside or in a specific classroom, school, conference room, company, building, or the like, it may be determined that the user is qualified to acquire information. Thus, for example, the teaching material distributed in a classroom such as a school or a university can be received, and the information processing device 200 can be used for a textbook or the like (see FIG. 30C). Alternatively, a material distributed in a conference room of a company or the like can be received and used as a conference material.

Note that this embodiment can be combined with any of the other embodiments in this specification as appropriate.

(Embodiment 10)
In this embodiment, a structure of an information processing device of one embodiment of the present invention will be described with reference to FIGS.

33 and 34 are diagrams illustrating a configuration of an information processing device of one embodiment of the present invention. FIG. 33A is a block diagram of an information processing device, and FIGS. 33B to 33E are perspective views illustrating a configuration of the information processing device. FIGS. 34A to 34E are perspective views illustrating the configuration of an information processing device.

<Information processing device>
An information processing device 5200B described in this embodiment includes an arithmetic device 5210 and an input / output device 5220 (see FIG. 33A).

The arithmetic device 5210 has a function of supplying operation information and a function of supplying image information based on the operation information.

The input / output device 5220 includes a display portion 5230, an input portion 5240, a detection portion 5250, a communication portion 5290, a function of supplying operation information, and a function of supplying image information. In addition, the input / output device 5220 has a function of supplying detection information, a function of supplying communication information, and a function of supplying communication information.

The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 supplies operation information based on the operation of the user of the information processing device 5200B.

Specifically, a keyboard, a hardware button, a pointing device, a touch sensor, a voice input device, a line-of-sight input device, or the like can be used for the input unit 5240.

The display portion 5230 has a display panel and a function of displaying image information. For example, the display panel described in Embodiment 1 can be used for the display portion 5230.

The detecting unit 5250 has a function of supplying detection information. For example, it has a function of detecting the surrounding environment where the information processing apparatus is used and supplying the information as detection information.

Specifically, an illuminance sensor, an imaging device, a posture detection device, a pressure sensor, a human sensor, or the like can be used for the detection unit 5250.

The communication unit 5290 has a function of supplying communication information and a function of supplying communication information. For example, it has a function of connecting to another electronic device or a communication network by wireless communication or wired communication. Specifically, it has functions such as wireless local area communication, telephone communication, and short-range wireless communication.

<Configuration Example 1 of Information Processing Device>
For example, an outer shape along a cylindrical column or the like can be applied to the display portion 5230 (see FIG. 33B). In addition, a function of changing the display method according to the illuminance of the usage environment is provided. In addition, a function of detecting the presence of a person and changing the display content is provided. Thereby, for example, it can be installed on a pillar of a building. Alternatively, an advertisement, guidance, or the like can be displayed. Alternatively, it can be used for digital signage and the like.

<Configuration Example 2 of Information Processing Apparatus>
For example, a function of generating image information based on the locus of a pointer used by a user is provided (see FIG. 33C). Specifically, a display panel having a diagonal length of 20 inches or more, preferably 40 inches or more, more preferably 55 inches or more can be used. Alternatively, a plurality of display panels can be arranged and used for one display area. Alternatively, a plurality of display panels can be arranged and used for a multi-screen. Thereby, for example, it can be used for an electronic blackboard, an electronic bulletin board, an electronic signboard, and the like.

<Configuration Example 3 of Information Processing Device>
For example, a function of changing a display method according to the illuminance of the use environment is provided (see FIG. 33D). Thereby, for example, the power consumption of the smart watch can be reduced. Alternatively, for example, an image can be displayed on a smart watch so that the image can be suitably used even in an environment with strong external light such as a sunny day outdoors.

<Configuration Example 4 of Information Processing Device>
The display portion 5230 includes, for example, a curved surface that is gently bent along the side surface of the housing (see FIG. 33E). Alternatively, the display portion 5230 includes a display panel, and the display panel has a function of performing display on, for example, a front surface, a side surface, and an upper surface. Thereby, for example, image information can be displayed not only on the front face of the mobile phone but also on the side face and the top face.

<Configuration Example 5 of Information Processing Apparatus>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 34A). Thereby, the power consumption of the smartphone can be reduced. Alternatively, for example, an image can be displayed on a smartphone so that the image can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

<Configuration Example 6 of Information Processing Apparatus>
For example, a function of changing a display method according to the illuminance of the use environment is provided (see FIG. 34B). Thus, an image can be displayed on the television system so that the image can be suitably used even when strong external light that enters the room on a sunny day shines.

<Configuration Example 7 of Information Processing Device>
For example, a function of changing a display method according to the illuminance of the use environment is provided (see FIG. 34C). Thus, for example, an image can be displayed on the tablet computer so that the image can be suitably used even in an environment with strong external light such as outdoors in fine weather.

<Configuration Example 8 of Information Processing Device>
For example, a function of changing a display method according to the illuminance of the use environment is provided (see FIG. 34D). Thus, for example, the subject can be displayed on the digital camera so that the subject can be suitably browsed even in an environment with strong external light such as outdoors in fine weather.

<Configuration Example 9 of Information Processing Apparatus>
For example, a function of changing the display method according to the illuminance of the use environment is provided (see FIG. 34E). Thus, for example, an image can be displayed on a personal computer so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

Note that this embodiment can be combined with any of the other embodiments in this specification as appropriate.

For example, in this specification and the like, when X and Y are explicitly described as being connected, X and Y are electrically connected, and X and Y are functional. And the case where X and Y are directly connected are disclosed in this specification and the like. Therefore, the connection relation is not limited to the predetermined connection relation, for example, the connection relation shown in the figure or the text, and it is assumed that anything other than the connection relation shown in the figure or the text is also described in the figure or the text.

Here, X and Y are assumed to be objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

As an example of the case where X and Y are directly connected, an element that enables electrical connection between X and Y (for example, a switch, a transistor, a capacitor, an inductor, a resistor, a diode, a display, etc.) Element, light emitting element, load, etc.) are not connected between X and Y, and elements (for example, switches, transistors, capacitive elements, inductors) that enable electrical connection between X and Y X and Y are not connected via a resistor element, a diode, a display element, a light emitting element, a load, or the like.

As an example of the case where X and Y are electrically connected, an element (for example, a switch, a transistor, a capacitive element, an inductor, a resistance element, a diode, a display, etc.) that enables electrical connection between X and Y is shown. More than one element, light emitting element, load, etc.) can be connected between X and Y. Note that the switch has a function of controlling on / off. That is, the switch is in a conductive state (on state) or a non-conductive state (off state), and has a function of controlling whether or not to pass a current. Alternatively, the switch has a function of selecting and switching a path through which a current flows. Note that the case where X and Y are electrically connected includes the case where X and Y are directly connected.

As an example of the case where X and Y are functionally connected, a circuit (for example, a logic circuit (an inverter, a NAND circuit, a NOR circuit, etc.) that enables a functional connection between X and Y, signal conversion, etc. Circuit (DA conversion circuit, AD conversion circuit, gamma correction circuit, etc.), potential level conversion circuit (power supply circuit (boost circuit, step-down circuit, etc.), level shifter circuit that changes signal potential level, etc.), voltage source, current source, switching Circuit, amplifier circuit (circuit that can increase signal amplitude or current amount, operational amplifier, differential amplifier circuit, source follower circuit, buffer circuit, etc.), signal generation circuit, memory circuit, control circuit, etc.) One or more can be connected between them. As an example, even if another circuit is interposed between X and Y, if the signal output from X is transmitted to Y, X and Y are functionally connected. To do. Note that the case where X and Y are functionally connected includes the case where X and Y are directly connected and the case where X and Y are electrically connected.

In addition, when it is explicitly described that X and Y are electrically connected, when X and Y are electrically connected (that is, when X and Y are separately connected). And X and Y are functionally connected (that is, they are functionally connected with another circuit between X and Y). In this specification, and the case where X and Y are directly connected (that is, the case where X and Y are connected without interposing another element or another circuit). It shall be disclosed in written documents. In other words, when it is explicitly described that it is electrically connected, the same contents as when it is explicitly described only that it is connected are disclosed in this specification and the like. It is assumed that

Note that for example, the source (or the first terminal) of the transistor is electrically connected to X through (or not through) Z1, and the drain (or the second terminal or the like) of the transistor is connected to Z2. Through (or without), Y is electrically connected, or the source (or the first terminal, etc.) of the transistor is directly connected to a part of Z1, and another part of Z1 Is directly connected to X, and the drain (or second terminal, etc.) of the transistor is directly connected to a part of Z2, and another part of Z2 is directly connected to Y. Then, it can be expressed as follows.

For example, “X and Y, and the source (or the first terminal or the like) and the drain (or the second terminal or the like) of the transistor are electrically connected to each other. The drain of the transistor (or the second terminal, etc.) and the Y are electrically connected in this order. ” Or “the source (or the first terminal or the like) of the transistor is electrically connected to X, the drain (or the second terminal or the like) of the transistor is electrically connected to Y, and X or the source ( Or the first terminal or the like, the drain of the transistor (or the second terminal, or the like) and Y are electrically connected in this order. Or “X is electrically connected to Y through the source (or the first terminal) and the drain (or the second terminal) of the transistor, and X is the source of the transistor (or the first terminal). Terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y are provided in this connection order. By using the same expression method as in these examples and defining the order of connection in the circuit configuration, the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor are separated. Apart from that, the technical scope can be determined.

Alternatively, as another expression method, for example, “a source (or a first terminal or the like of a transistor) is electrically connected to X through at least a first connection path, and the first connection path is The second connection path does not have a second connection path, and the second connection path includes a transistor source (or first terminal or the like) and a transistor drain (or second terminal or the like) through the transistor. The first connection path is a path through Z1, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y through at least the third connection path. The third connection path is connected and does not have the second connection path, and the third connection path is a path through Z2. " Or, “the source (or the first terminal or the like) of the transistor is electrically connected to X via Z1 by at least a first connection path, and the first connection path is a second connection path. The second connection path has a connection path through the transistor, and the drain (or the second terminal, etc.) of the transistor is at least connected to Z2 by the third connection path. , Y, and the third connection path does not have the second connection path. Or “the source of the transistor (or the first terminal or the like) is electrically connected to X through Z1 by at least a first electrical path, and the first electrical path is a second electrical path Does not have an electrical path, and the second electrical path is an electrical path from the source (or first terminal or the like) of the transistor to the drain (or second terminal or the like) of the transistor; The drain (or the second terminal or the like) of the transistor is electrically connected to Y through Z2 by at least a third electrical path, and the third electrical path is a fourth electrical path. The fourth electrical path is an electrical path from the drain (or second terminal or the like) of the transistor to the source (or first terminal or the like) of the transistor. can do. Using the same expression method as those examples, by defining the connection path in the circuit configuration, the source (or the first terminal or the like) of the transistor and the drain (or the second terminal or the like) are distinguished. The technical scope can be determined.

In addition, these expression methods are examples, and are not limited to these expression methods. Here, it is assumed that X, Y, Z1, and Z2 are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, and the like).

In addition, even when the components shown in the circuit diagram are electrically connected to each other, even when one component has the functions of a plurality of components. There is also. For example, in the case where a part of the wiring also functions as an electrode, one conductive film has both the functions of the constituent elements of the wiring function and the electrode function. Therefore, the term “electrically connected” in this specification includes in its category such a case where one conductive film has functions of a plurality of components.

In this embodiment, the display element 550 (i, j), the display element 550 (i, j + 1), and the display element 550 (i) included in the display panel 700_1 (see FIG. 2B) which is one embodiment of the present invention are included. , J + 2), the results of evaluating the effect of the micro optical resonator structure having the configuration of FIG.

As an element constituting the display element 550 (i, j), the display element 550 (i, j + 1), and the display element 550 (i, j + 2), an oxide including indium, tin, and silicon as the conductive film 551_1 (i, j) is provided. A material conductive film was assumed. The conductive film 551_2 (i, j) is assumed to be an oxide conductive film containing indium and zinc.

FIG. 35 shows a refractive index characteristic N1 calculated from the obtained transmittance by forming an oxide conductive film containing indium, tin, and silicon on a light-transmitting substrate with a thickness of 100 nm. An oxide conductive film containing indium and zinc was formed to a thickness of 100 nm over the light-transmitting substrate, and the refractive index characteristics N2 calculated from the obtained transmittance are shown. The horizontal axis in FIG. 35 is the wavelength (nm) of light, and the vertical axis is the refractive index. A quartz substrate was used as the light transmitting substrate.

An oxide conductive film containing indium, tin, and silicon is supplied with argon gas and oxygen gas using a target having a weight ratio of 85% In ₂ O ₃ , 10% SnO ₂ , and 5% SiO _2. It was formed by the used sputtering method. The oxide conductive film containing indium and zinc was formed by a sputtering method using an argon gas and an oxygen gas using a target having a composition of 25% In ₂ O ₃ and 75% ZnO.

As shown in FIG. 35, the refractive index characteristics N1 and N2 have wavelength dispersion.

The configuration of the micro optical resonator structure used in the calculation of this embodiment and the effect of the micro optical resonator structure will be described by comparing the structure MS1 with the structure MS2.

The structure MS1 assumes a display element 550 (i, j) and a display element 550 (i, j + 2) (see FIG. 2B), and has a light-emitting layer 553 with a thickness of 188 nm and a conductive film 551_1 (i, j). A stacked structure of an oxide conductive film having a thickness of 50 nm and having indium, tin and silicon, and a conductive film 551_2 (i, j) having an oxide conductive film having a thickness of 62 nm and having indium and zinc. (See FIG. 36A).

The structure MS2 assumes a display element 550 (i, j + 1) (see FIG. 2B), and has a light-emitting layer 553 with a thickness of 188 nm and indium with a thickness of 50 nm as a conductive film 551_1 (i, j). And an oxide conductive film containing tin and silicon are stacked (see FIG. 36B).

The electrode 552 was a 200-nm-thick film made of silver. The conductive film 551_0 (i, j) was a 25-nm-thick film containing silver. The refractive index used the physical property value of silver. A structure in which an oxide conductive film having a thickness of 70 nm and containing indium, tin, and silicon was stacked thereover was assumed as the conductive layer 554. The refractive index was as shown in FIG. Further, a structure in which a film having a refractive index of 1.5 is stacked thereon as the insulating film 555 was assumed (see FIGS. 36A and 36B).

The film thickness is set assuming the refractive index of each material in each color as shown below.

Although λ = 610 nm is usually evaluated as the wavelength λ representing red, it is desirable to evaluate red at λ = 640 nm, which is the longer wavelength side, in order to realize a color gamut according to the BT2020 standard. Similarly, λ = 460 nm is usually evaluated as the wavelength λ representing blue, but it is desirable to evaluate at λ = 450 nm, which is the shorter wavelength side.

As shown in FIG. 35, the refractive index of the oxide conductive film including indium, tin, and silicon is such that light having a refractive index of approximately 1.95 in λ = 640 nm, which is approximately red, and light having λ = 530 nm, which is approximately green. And the refractive index was 2.07 for light of approximately λ = 450 nm, which is approximately blue.

As shown in FIG. 35, the refractive index of the oxide conductive film containing indium and zinc is such that the refractive index is approximately 2.04 for light of λ = 640 nm, which is approximately red, and is refraction of light for λ = 530 nm, which is approximately green. The refractive index was 2.19 in the light of λ = 450 nm, which had a ratio of 2.10 and was approximately blue.

The light emitting layer has a refractive index of about 1.8 at any of the above wavelengths.

Even if each of the thicknesses of the conductive films 551_1 (i, j) and the conductive films 551_2 (i, j) has an error of 0 nm or more and 5 nm or less, a minute optical resonator structure is formed for each subpixel color. Is effective.

In structures MS1 and MS2, the intensity (light intensity) of light reaching the insulating film 555 was calculated. FIG. 36C shows the calculation results of the light intensity. In FIG. 36C, the horizontal axis represents the wavelength (nm) of light emitted from the light-emitting layer 553, and the vertical axis represents the light intensity reaching the insulating film 555.

The light-emitting layer 553 emits white light. In FIG. 36C, the light intensity changes depending on the spectrum of light emitted from the light-emitting layer 553. Therefore, the vertical axis in FIG. 36C indicates a qualitative value, and the exact position of the maximum emission wavelength may differ depending on the spectrum of light. FIG. 36 (C) shows the result of calculation using calculation software called SETFOS manufactured by Cybernet Systems.

Although the calculation result of the emission spectrum peak shown in FIG. 36C includes the above error, in the structure MS1, the intensity of the wavelength in the wavelength region of 430 nm to 460 nm representing red and the intensity of 630 nm to 670 nm representing blue are shown. It can be seen that the intensity of the wavelength in the wavelength region is large. That is, the pixel having the structure MS1 can emit light having a spectrum having the emission maximum wavelength in any of the above wavelength ranges.

When the thicknesses of the conductive films 551_1 (i, j), the conductive films 551_2 (i, j), and the light-emitting layers 553 are set to be larger than the above values, several intensifying wavelengths are generated in the visible light region. In other words, when the distance d0 or the distance d1 between the reflective electrode and the transflective electrode along the thickness direction of the transflective electrode is increased, both the blue and red emission intensities of the display element can be increased. Also, light whose emission intensity is increased is emitted between blue and red.

Therefore, the setting of the material and the film thickness of the structures MS1 and MS2 is effective for the micro-optical resonator structure to emit high-purity color.

The micro-optical resonator structure has a predetermined optical distance at each wavelength of light to be displayed between the reflective electrode and the semi-transmissive conductive film. R02 can resonate.

For example, in the structure MS1, the optical distance at a wavelength of 640 nm, which is red, was 556.18 nm. In the structure MS2, the optical distance at a wavelength of 530 nm, which is green, was 438.9 nm. In the structure MS1, the optical distance at a wavelength of 450 nm, which is blue, was 577.68 nm.

When the materials of the conductive films 551_1 (i, j), the conductive films 551_2 (i, j), and the light emitting layer 553 are changed, the refractive index and the film thickness of each film do not change the above-mentioned standardized optical distance. , The same effect of the micro optical resonator structure can be obtained.

The structure described in this embodiment can be used in appropriate combination with any of the structures described in the other embodiments.

ACF1 conductive material AF1 alignment film AF2 alignment film ANO conductive film B01 light B02 light BM light-shielding film BR conductive film C electrode C1 arrow C2 arrow C11 capacitive element C12 capacitive element C21 capacitive element CF1 colored film CF2 colored film CP conductive material CSCOM wiring d0 distance d1 Distance flexible printed circuit board FPC1
G01 light G1 scan line G02 light G2 scan line GD drive circuit GDA drive circuit GDB drive circuit GDC drive circuit GDD drive circuit KB1 structure L1 light L2 light M transistor M (h) electrode MD transistor ML detection signal line MS1 structure MS2 structure N1 Refractive index characteristic N2 Refractive index characteristic P1 Position information R01 Light R1 Arrow R02 Light R2 Arrow S1 Signal line S2 Signal line SD Drive circuit SD1 Drive circuit SD2 Drive circuit SE1 Detection information SS Control information SW1 Switch SW2 Switch V1 Image information V11 Information V12 Information VCOM1 Wiring VCOM2 Conductive film X0 Adjacent portion 10a Gray tone mask 10b Half tone mask 13 Light transmitting substrate 15 Light shielding film 17 Light shielding portion 18 Diffraction grating portion 19 Transmission portion 23 Semi light transmission film 25 Light shielding film 27 Light shielding portion 28 Semi light transmission portion 29 Transmission part 20 0 Information processing device 210 Computing device 211 Computing unit 212 Storage unit 214 Transmission path 215 Input / output interface 220 Input / output device 230 Display unit 231 Display area 234 Decompression circuit 235M Image processing circuit 238 Control unit 240 Input unit 241 Detection region 250 Detection unit 290 Communication unit 501A Insulating film 501B Insulating film 501C Insulating film 503 Insulating film 504 Conductive film 504E Conductive film 505 Bonding layer 506 Insulating film 508 Semiconductor film 508A Region 508B Region 508C Region 511B Conductive film 511C Conductive film 512A Conductive film 512B Conductive film 512C Conductive film 512D conductive film 516 insulating film 518 insulating film 519B terminal 519C terminal 520 functional layer 521 insulating film 521A insulating film 521B insulating film 522 connecting portion 522A connecting portion 522B connecting portion 524 conductive film 528 insulating film 5 0 pixel circuit 541 resist mask 542 resist mask 550 display element 551 electrode 551_0 conductive film 551_1 conductive film 551_2 conductive film 552 electrode 553 layer 553M central portion 554 conductive layer 555 insulating film 570 substrate 573 insulating film 573A insulating film 573B insulating film 591A opening 591B Opening 591C Opening 592A Opening 592B Opening 592C Opening 700 Display panel 700_1 Display panel 700_2 Display panel 700_3 Display panel 700_3B Display panel 700_4 Display panel 700B Display panel 702 Pixel 703 Pixel 705 Sealant 719 Terminal 750 Display element 751 Electrode 751E Region 751H Opening 752 Electrode 753 Layer 754A Interlayer 754B Interlayer 754C Interlayer 770 Substrate 770D Functional film 770P Machine Film 771 Insulating film 775 Sensing element 900 Pixel 900s Light-shielding area 900t Transmission area 901 Drive circuit section 902 Wiring 904 Wiring 906 Wiring 910 Transistor 911 Transistor 912 Transistor 913 Capacitor 916B Light-emitting area 916G Light-emitting area 916R Light-emitting area 930EL Light-emitting element 5200B Information processing device 5210 arithmetic unit 5220 input / output unit 5230 display unit 5240 input unit 5250 detection unit 5290 communication unit

Claims (8)

A first pixel and a second pixel,
The first pixel and the second pixel each include a light emitting layer, a first conductive film, a second conductive film, and a third conductive film,
The first conductive film has a light transmitting property and a light reflecting property,
The second conductive film has light reflectivity,
The third conductive film has optical transparency,
The first conductive film is formed so as to sandwich the third conductive film between the first conductive film and the second conductive film;
The light emitting layer is formed so as to be sandwiched between the second conductive film and the third conductive film,
The first pixel has a first distance between the first conductive film and the second conductive film;
The second pixel has a second distance between the first conductive film and the second conductive film;
The second distance is equal to the first distance;
The first pixel emits light having a spectrum having a light emission maximum wavelength in a wavelength range of 630 nm to 670 nm,
The display panel, wherein the second pixel emits light having a spectrum having a maximum light emission wavelength in a wavelength range of 430 nm to 460 nm. A first pixel and a second pixel,
The first pixel and the second pixel each include a light emitting layer, a first conductive film, a second conductive film, and a third conductive film,
The first conductive film has light reflectivity,
The second conductive film has a light transmitting property and a light reflecting property,
The third conductive film has optical transparency,
The first conductive film is formed so as to sandwich the third conductive film between the first conductive film and the second conductive film;
The light emitting layer is formed so as to be sandwiched between the second conductive film and the third conductive film,
The first pixel has a first distance between the first conductive film and the second conductive film;
The second pixel has a second distance between the first conductive film and the second conductive film;
The second distance is equal to the first distance;
The first pixel emits light having a spectrum having a light emission maximum wavelength in a wavelength range of 630 nm to 670 nm,
The display panel, wherein the second pixel emits light having a spectrum having a maximum light emission wavelength in a wavelength range of 430 nm to 460 nm. In claim 1 or claim 2,
And a third pixel.
The third pixel includes the light emitting layer, the first conductive film, the second conductive film, and the third conductive film,
The third pixel includes a third distance between the first conductive film and the second conductive film,
The third distance is different from the first distance,
The third pixel is a display panel that emits green light. In claim 1 or claim 2,
And a fourth conductive film,
The fourth conductive film has optical transparency,
In the first pixel, the fourth conductive film is disposed so as to be sandwiched between the light emitting layer and the third conductive film,
In the second pixel, the fourth conductive film is disposed so as to be sandwiched between the light emitting layer and the third conductive film,
In the first pixel, the third conductive film has a first thickness,
In the second pixel, the third conductive film has a second thickness,
In the first pixel, the fourth conductive film has a third thickness,
In the second pixel, the fourth conductive film has a fourth thickness,
The first film chamber is equal to the second film thickness,
The display panel, wherein the third thickness is equal to the fourth thickness. In claim 4,
The display panel, wherein the third conductive film has a smaller etching rate in one etching atmosphere than the fourth conductive film. In claim 4,
A display panel in which the third conductive film has a lower etching rate when using one solution than the fourth conductive film.   A keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, a line-of-sight input device, a posture detection device, and the display panel according to claim 1 or 2; An information processing device, including: Forming a first conductive film;
Forming a second conductive film above the first conductive film;
Forming a third conductive film above the second conductive film;
Forming a mask over the third conductive film, the mask having a first region and a second region having a thickness smaller than the thickness of the first region;
A first step of removing a portion of the first conductive film, the second conductive film, and the third conductive film that does not overlap with the mask;
After the first step, a second step of removing the mask in the second region by retracting the mask;
After the second step, a third step of removing a portion of the third conductive film overlapping the second region;
Removing the mask after the third step;
Forming a light-emitting layer above the second conductive film or the third conductive film;
Forming a fourth conductive film over the light-emitting layer.

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