JP2018077360A - Display panel, display device, input/output device, and information processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a novel display panel having excellent convenience or reliability, and provide a novel display device having excellent convenience or reliability.SOLUTION: A display panel has a pixel. The pixel has a translucent region that allows visible light to pass through, and a display element. The translucent region has a pixel circuit. The pixel circuit has a conductive film, and the conductive film has a region that allows visible light to pass through. The display element is electrically connected to the pixel circuit, and the display element emits white light to the translucent region of the conductive film.SELECTED DRAWING: Figure 2

Description

  One embodiment of the present invention relates to a display panel, a display device, an input / output device, or an information processing device.

  Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, as a technical field of one embodiment of the present invention disclosed more specifically in this specification, a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof, Can be cited as an example.

  As a novel display panel excellent in convenience or reliability, a display panel including a first base material, a second base material, a bonding layer, and an insulating layer is known (Patent Document 1). The second base material has a region overlapping the first base material, the joining layer joins the first base material and the second base material, and the insulating layer is the first base material and the second base material. And in contact with the bonding layer. Thereby, the gap which is likely to occur in the region where the bonding layer is in contact with the first substrate or the region where the bonding layer is in contact with the second substrate can be filled with the insulating layer, and the first substrate and the second substrate It is possible to suppress the phenomenon of impurities diffusing into the functional layer in the region surrounded by the base material and the bonding layer that joins the first base material and the second base material.

JP-A-2006-85460

  An object of one embodiment of the present invention is to provide a novel display panel that is highly convenient or reliable. Another object is to provide a novel display device that is highly convenient or reliable. Another object is to provide a novel input / output device that is highly convenient or reliable. Another object is to provide a novel information processing device that is highly convenient or reliable. Another object is to provide a novel display panel, a novel display device, a novel input / output device, a novel information processing device, or a novel semiconductor device.

  Note that the description of these problems does not disturb the existence of other problems. Note that one embodiment of the present invention does not have to solve all of these problems. Issues other than these will be apparent from the description of the specification, drawings, claims, etc., and other issues can be extracted from the descriptions of the specification, drawings, claims, etc. It is.

(1) One embodiment of the present invention is a display panel including a pixel. In addition, the pixel includes a functional layer and a display element.

  The functional layer includes a light-transmitting region that transmits visible light, and the functional layer includes a pixel circuit.

  The pixel circuit includes a conductive film, and the conductive film includes a region that transmits visible light in a light-transmitting region.

  The display element is electrically connected to the pixel circuit, and the display element has a function of emitting white light toward the light-transmitting region.

(2) Further, according to one embodiment of the present invention, the light-transmitting region includes a colored film, and the light-transmitting region has a transmittance of 60% or more with respect to light of any one color of red, green, and blue. It is a display panel provided.

(3) One embodiment of the present invention is a display panel in which the pixel circuit includes a transistor.

  The transistor includes a semiconductor film, a first electrode, a second electrode, and a first gate electrode.

  The semiconductor film includes a first region electrically connected to the first electrode and a second region electrically connected to the second electrode, and the semiconductor film includes the first region and the second region. A region overlapping with the first gate electrode is provided.

  The first region has a function of transmitting visible light, and the second region has a function of transmitting visible light.

(4) One embodiment of the present invention is a display panel in which the semiconductor film includes a band gap of 2.5 eV or more and the conductive film includes a conductive oxide.

  As a result, the pixel circuit can be placed over the display element between the display panel user and the display element. Alternatively, the aperture ratio of the pixel can be increased. Alternatively, the degree of freedom in pixel layout can be increased. Alternatively, the density of a current flowing through the light-emitting element can be reduced while maintaining the brightness of display displayed by the display element. Alternatively, the reliability of the light-emitting element can be increased. For example, an organic EL element can be used for the light emitting element. As a result, a novel display panel that is highly convenient or reliable can be provided.

(5) One embodiment of the present invention is a display panel in which the pixel includes a first insulating film and the functional layer includes a second insulating film.

  The display element includes a region sandwiched between the first insulating film and the second insulating film. The display element includes a first electrode, a second electrode, and a layer containing a light-emitting material.

  The layer containing a light-emitting material includes a region sandwiched between the first electrode and the second electrode, and the layer containing a light-emitting material contains an organic compound.

  Thereby, diffusion of impurities to the display element can be suppressed. As a result, a novel display device that is highly convenient or reliable can be provided.

(6) One embodiment of the present invention is a display panel including a display region.

  The display area includes a group of pixels, another group of pixels, scanning lines, and signal lines.

  The group of pixels includes pixels, and the group of pixels is arranged in the row direction.

  Another group of the plurality of pixels includes a pixel, and the other group of the plurality of pixels is arranged in a column direction intersecting the row direction.

  The scan line is electrically connected to a plurality of pixels in a group, the signal line is electrically connected to a plurality of pixels in another group, the scan line includes a metal film, and the signal line includes a metal film.

  Thereby, for example, it is possible to suppress deterioration of the selection signal supplied to the pixel circuit. Alternatively, deterioration of the image signal supplied to the pixel circuit can be suppressed. Alternatively, a drop in power supply potential supplied to the pixel circuit can be suppressed. As a result, a novel display device that is highly convenient or reliable can be provided.

(7) One embodiment of the present invention includes the display panel and a control unit.

  The control unit has a function of supplying image information and control information, the control unit has a function of generating information based on the image information, and the control unit has a function of supplying information.

  The display panel has a function of supplying information, and the display element has a function of displaying based on the information.

  Thereby, image information can be displayed using a display element. As a result, a novel display device that is highly convenient or reliable can be provided.

(8) One embodiment of the present invention is an input / output device including an input portion and a display portion.

  The display unit includes the display panel described above, the input unit includes a detection region, the input unit includes a function of detecting an object close to the detection region, and the detection region includes a region overlapping with the pixel.

(9) One embodiment of the present invention is an input / output device in which the detection region includes a control line, a detection signal line, and a detection element.

  The detection element is electrically connected to the control line and the detection signal line, the control line has a function of supplying a control signal, and the detection signal line has a function of supplying a detection signal.

  The detection element has a function of supplying the detection signal that changes based on a control signal and a distance from an area close to the region overlapping with the pixel. The sensing element includes a first electrode and a second electrode.

  The first electrode includes a light-transmitting region in a region overlapping with the pixel, and the first electrode is electrically connected to the control line.

  The second electrode includes a region having a light-transmitting property in a region overlapping with the pixel, the second electrode is electrically connected to the detection signal line, and the second electrode is partially connected to the region overlapping with the pixel. Is arranged so as to form an electric field between the first electrode and the first electrode.

  Accordingly, it is possible to detect an object that is close to a region overlapping with the display unit while displaying image information using the display unit. Alternatively, position information can be input using a finger or the like that is brought close to the display portion as a pointer. Alternatively, the position information can be associated with image information displayed on the display unit. As a result, a novel input / output device that is highly convenient or reliable can be provided.

(10) One embodiment of the present invention includes one or more of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, a viewpoint input device, and a posture detection device, And an information processing apparatus including a display panel.

  Thereby, based on the information supplied using various input devices, image information or control information can be generated by the arithmetic device. As a result, a novel information processing apparatus that is highly convenient or reliable can be provided.

  In the drawings attached to the present specification, the components are classified by function, and the block diagram is shown as an independent block. However, it is difficult to completely separate the actual components for each function. May involve multiple functions.

  In this specification, the terms “source” and “drain” of a transistor interchange with each other depending on the polarity of the transistor or the level of potential applied to each terminal. In general, in an n-channel transistor, a terminal to which a low potential is applied is called a source, and a terminal to which a high potential is applied is called a drain. In a p-channel transistor, a terminal to which a low potential is applied is called a drain, and a terminal to which a high potential is applied is called a source. In this specification, for the sake of convenience, the connection relationship between transistors may be described on the assumption that the source and the drain are fixed. However, the names of the source and the drain are actually switched according to the above-described potential relationship. .

  In this specification, the source of a transistor means a source region that is part of a semiconductor film functioning as an active layer or a source electrode connected to the semiconductor film. Similarly, a drain of a transistor means a drain region that is part of the semiconductor film or a drain electrode connected to the semiconductor film. The gate means a gate electrode.

  In this specification, the state where the transistors are connected in series means, for example, a state where only one of the source and the drain of the first transistor is connected to only one of the source and the drain of the second transistor. To do. In addition, the state where the transistors are connected in parallel means that one of the source and the drain of the first transistor is connected to one of the source and the drain of the second transistor, and the other of the source and the drain of the first transistor is connected. It means a state of being connected to the other of the source and the drain of the second transistor.

  In this specification, the connection means an electrical connection, and corresponds to a state where current, voltage, or potential can be supplied or transmitted. Therefore, the connected state does not necessarily indicate a directly connected state, and a wiring, a resistor, a diode, a transistor, or the like is provided so that current, voltage, or potential can be supplied or transmitted. The state of being indirectly connected through a circuit element is also included in the category.

  In this specification, even when independent components on the circuit diagram are connected to each other, in practice, for example, when a part of the wiring functions as an electrode, In some cases, it also has the functions of the components. In this specification, the term “connection” includes a case where one conductive film has functions of a plurality of components.

  In this specification, one of a first electrode and a second electrode of a transistor refers to a source electrode, and the other refers to a drain electrode.

  According to one embodiment of the present invention, a novel display panel that is highly convenient or reliable can be provided. Alternatively, a novel display device that is highly convenient or reliable can be provided. Alternatively, a novel input / output device that is highly convenient or reliable can be provided. Alternatively, a novel information processing device that is highly convenient or reliable can be provided. Alternatively, a novel display panel, a novel display device, a novel input / output device, a novel information processing device, or a novel semiconductor device can be provided.

  Note that the description of these effects does not disturb the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. It should be noted that the effects other than these are naturally obvious from the description of the specification, drawings, claims, etc., and it is possible to extract the other effects from the descriptions of the specification, drawings, claims, etc. It is.

4A and 4B are a top view and a schematic view illustrating a structure of a display panel according to an embodiment. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. FIG. 10 is a top view illustrating a structure of a pixel of a display panel according to an embodiment. FIG. 6 is a circuit diagram illustrating a pixel circuit of a display panel according to an embodiment. FIG. 6 is a top view illustrating pixels and subpixels of a display panel according to Embodiment. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. FIG. 9 is a block diagram illustrating a structure of a display device according to an embodiment. FIG. 6 is a block diagram illustrating a structure of a display panel according to Embodiment. FIG. 3 is a block diagram illustrating a structure of an input / output device according to an embodiment. FIG. 6 is a top view illustrating a structure of an input / output device according to an embodiment. 4A and 4B are a top view and a cross-sectional view illustrating a structure of an input / output device according to an embodiment. FIG. 2 is a block diagram and a projection view illustrating a configuration of an information processing device according to an embodiment. FIG. 6 is a flowchart illustrating a method for driving the information processing apparatus according to the embodiment. 6A and 6B are a flowchart and a timing chart illustrating a method for driving an information processing apparatus according to an embodiment. 2A and 2B illustrate a structure of an information processing device according to an embodiment. 2A and 2B illustrate a structure of an information processing device according to an embodiment.

  The display panel of one embodiment of the present invention is a display panel including a pixel, and the pixel includes a functional layer and a display element. The functional layer includes a light-transmitting region that transmits visible light, and the functional layer includes a pixel circuit. The pixel circuit includes a conductive film, and the conductive film includes a region that transmits visible light in a light-transmitting region. The display element is electrically connected to the pixel circuit, and the display element has a function of emitting white light toward the light-transmitting region.

  As a result, the pixel circuit can be placed over the display element between the display panel user and the display element. Alternatively, the aperture ratio of the pixel can be increased. Alternatively, the degree of freedom in pixel layout can be increased. Alternatively, the density of a current flowing through the light-emitting element can be reduced while maintaining the brightness of display displayed by the display element. Alternatively, the reliability of the light-emitting element can be increased. For example, an organic EL element can be used for the light emitting element. As a result, a novel display panel that is highly convenient or reliable can be provided.

  Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
In this embodiment, the structure of the display panel of one embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 illustrates a structure of a display panel of one embodiment of the present invention. 1A is a top view of the display panel, and FIG. 1B is a top view illustrating part of the pixels of the display panel illustrated in FIG. FIG. 1C is a schematic diagram illustrating a cross-sectional structure of the display panel illustrated in FIG.

  2 and 3 are cross-sectional views illustrating the structure of the display panel. 2A is a cross-sectional view taken along a cutting line X1-X2, a cutting line X3-X4, and a cutting line X5-X6 in FIG. 4, and FIG. 2B and FIG. Both are diagrams for explaining a part of FIG.

  3A is a cross-sectional view taken along section line X7-X8 in FIG. 4 and section line X9-X10 in FIG.

  FIG. 4 is a top view illustrating a structure of a pixel of the display panel illustrated in FIG.

  FIG. 5 is a circuit diagram illustrating a structure of a pixel circuit included in the display panel of one embodiment of the present invention.

  In the present specification, a variable having an integer value of 1 or more may be used for the sign. For example, (p) including a variable p that takes an integer value of 1 or more may be used as a part of a code that identifies any of the maximum p components. Further, for example, a variable m that takes an integer value of 1 or more and (m, n) including a variable n may be used as part of a code that identifies any one of the maximum m × n components.

<Configuration Example of Display Panel 1. >
A display panel 700 described in this embodiment includes a pixel 702 (i, j) (see FIG. 1A or FIG. 10A).

<< Pixel Configuration Example 1. >>
The pixel 702 (i, j) includes a functional layer 520 and a display element 550 (i, j) (see FIG. 1C).

<< Configuration Example of Functional Layer 1. >>
The functional layer 520 includes a light-transmitting region 520T that transmits visible light. The functional layer 520 includes a pixel circuit 530 (i, j).

  The pixel circuit 530 (i, j) includes a conductive film. The conductive film includes a region that transmits visible light in the light-transmitting region 520T. For example, a conductive film that transmits visible light can be used for the conductive films 512A, 512B, and 504 (see FIG. 2A).

  Note that each of the conductive films 512A, 512B, and 504 has a function of an electrode of the transistor M. Alternatively, each of the conductive films 512A, 512B, and 504 has a wiring function of the pixel circuit 530 (i, j) (see FIG. 2A or FIG. 2B).

<< Configuration example of display element >>
The display element 550 (i, j) is electrically connected to the pixel circuit 530 (i, j) (see FIG. 2A). For example, the display element 550 (i, j) is electrically connected to the pixel circuit 530 (i, j) at the connection portion 522A. Specifically, the electrode 551 (i, j) of the display element 550 (i, j) is electrically connected to the conductive film 512A of the transistor M.

  The display element 550 (i, j) has a function of emitting white light toward the light-transmitting region 520T (see FIG. 1C). Note that light emitted from the display element 550 (i, j) is indicated by a solid arrow in the drawing (see FIG. 2A).

<< Configuration example of translucent region >>
The translucent region 520T includes a colored film CF. The light-transmitting region 520T has a transmittance of 60% or more, preferably 65% or more, and more preferably 70% or more with respect to light of any one color of red, green, and blue.

<Colored film CF>
A material that transmits light of a predetermined color can be used for the colored film CF. Thereby, the colored film CF can be used for a color filter, for example.

  For example, a material that transmits blue light, a material that transmits green light, or a material that transmits red light can be used for the colored film CF. Thereby, the spectrum width of the light transmitted through the colored film CF can be narrowed, and the display can be made vivid.

<< Configuration Example of Pixel Circuit 1. >>
The pixel circuit 530 (i, j) includes a transistor M. The transistor M includes a semiconductor film 508, a conductive film 512A, a conductive film 512B, and a conductive film 504 functioning as a gate electrode.

  The semiconductor film 508 includes a region 508A electrically connected to the conductive film 512A and a region 508B electrically connected to the conductive film 512B (see FIG. 2B).

  The semiconductor film 508 includes a region 508C that overlaps with the conductive film 504 functioning as a gate electrode between the region 508A and the region 508B.

  The region 508A has a function of transmitting visible light, and the region 508B has a function of transmitting visible light.

  The pixel circuit 530 (i, j) has a function of driving the display element 550 (i, j) (see FIG. 5).

  A switch, a transistor, a diode, a resistor, an inductor, a capacitor, or the like can be used for the pixel circuit 530 (i, j).

  For example, one or more transistors can be used for the switch. Alternatively, a plurality of transistors connected in parallel, a plurality of transistors connected in series, and a plurality of transistors connected in combination of series and parallel can be used for one switch.

  For example, the pixel circuit 530 (i, j) is electrically connected to the signal line S2 (j), the scanning line G2 (i), and the conductive film ANO (see FIG. 5). Note that the conductive film 512B is electrically connected to the conductive film ANO at the connection portion 522B (see FIGS. 2A and 5).

  The pixel circuit 530 (i, j) includes a switch SW2, a transistor M, and a capacitor C21 (see FIG. 5).

  For example, a transistor including a gate electrode electrically connected to the scan line G2 (i) and a first electrode electrically connected to the signal line S2 (j) can be used for the switch SW2. .

  The transistor M includes a gate electrode that is electrically connected to the second electrode of the transistor used for the switch SW2, and a first electrode that is electrically connected to the conductive film ANO.

  Note that a transistor including a conductive film provided so that a semiconductor film is interposed between a gate electrode and the gate electrode can be used for the transistor M. For example, a conductive film that is electrically connected to a wiring that can supply the same potential as the gate electrode of the transistor M can be used for the conductive film.

  The capacitor C21 includes a first electrode electrically connected to the second electrode of the transistor used for the switch SW2, and a second electrode electrically connected to the first electrode of the transistor M. .

  In addition, the electrode 551 (i, j) of the display element 550 (i, j) is electrically connected to the second electrode of the transistor M, and the electrode 552 of the display element 550 (i, j) is electrically connected to the conductive film VCOM2. Connect. Thereby, the display element 550 (i, j) can be driven.

<< Configuration Example 2 of Pixel Circuit >>
The semiconductor film 508 has a band gap of 2.5 eV or more, and the conductive film includes a conductive oxide in a region that transmits visible light. Note that for example, a conductive oxide that transmits visible light can be used for the conductive films 512A, 512B, and 504 (see FIG. 2A).

  As a result, the pixel circuit can be placed over the display element between the display panel user and the display element. Alternatively, the aperture ratio of the pixel can be increased. Alternatively, the degree of freedom in pixel layout can be increased. Alternatively, the density of a current flowing through the light-emitting element can be reduced while maintaining the brightness of display displayed by the display element. Alternatively, the reliability of the light-emitting element can be increased. For example, an organic EL element can be used for the light emitting element. As a result, a novel display panel that is highly convenient or reliable can be provided.

<< Pixel Configuration Example 2. >>
The pixel 530 (i, j) includes an insulating film 573 (see FIG. 3). For example, a single film or a stacked film in which a plurality of films are stacked can be used for the insulating film 573. Specifically, a stacked film in which the insulating films 573A and 573B are stacked can be used for the insulating film 573.

  The functional layer 520 includes an insulating film 518. Note that the insulating film 573 includes, for example, a region in contact with the insulating film 518 outside the display region 231.

  The display element 550 (i, j) includes a region sandwiched between the insulating film 573 and the insulating film 518.

  The display element 550 (i, i) includes an electrode 551 (i, j), an electrode 552, and a layer 553 (j) containing a light-emitting material.

  The layer 553 containing a light-emitting material includes a region sandwiched between the electrode 551 and the electrode 552. The layer 553 containing a light-emitting material contains an organic compound.

  Thereby, diffusion of impurities to the display element can be suppressed. As a result, a novel display device that is highly convenient or reliable can be provided.

<Configuration Example of Display Panel 2. >
In addition, the display panel 700 described in this embodiment includes a display region 231 (see FIG. 10).

《Display area configuration example》
The display region 231 is scanned with a group of a plurality of pixels 702 (i, 1) to 702 (i, n) and another group of a plurality of pixels 702 (1, j) to 702 (m, j). It has a line G1 (i) and a signal line S1 (i) (see FIG. 10). Further, the scanning line G2 (i), the conductive film VCOM2, the conductive film ANO, and the signal line S2 (j) are included. Note that i is an integer of 1 to m, j is an integer of 1 to n, and m and n are integers of 1 or more.

  A group of the plurality of pixels 702 (i, 1) to 702 (i, n) includes a pixel 702 (i, j), and a group of the plurality of pixels 702 (i, 1) to 702 (i, n) includes Arranged in the row direction (direction indicated by arrow R1 in the figure).

  The other group of the plurality of pixels 702 (1, j) to 702 (m, j) includes the pixel 702 (i, j), and the other group of the plurality of pixels 702 (1, j) to 702 (m , J) are arranged in a column direction (direction indicated by an arrow C1 in the drawing) intersecting the row direction.

  The scan line G2 (i) is electrically connected to a group of the plurality of pixels 702 (i, 1) to 702 (i, n) arranged in the row direction.

  The signal line S2 (j) is electrically connected to another group of the plurality of pixels 702 (1, j) to 702 (m, j) arranged in the column direction.

<Configuration Example of Display Panel 3. >
A display panel 700 described in this embodiment includes a plurality of pixels. The plurality of pixels have a function of displaying colors having different hues. Alternatively, by using the plurality of pixels, hue colors that cannot be displayed by the pixels can be displayed by additive color mixing.

<< Pixel Configuration Example 3. >>
Note that in the case where a plurality of pixels that can display colors having different hues are used for color mixing, each pixel can be referred to as a sub-pixel. In addition, a plurality of sub-pixels can be referred to as a pixel.

  For example, the pixel 702 (i, j) can be rephrased as a sub-pixel, and the pixel 702 (i, j), the pixel 702 (i, j + 1), and the pixel 702 (i, j + 2) are combined into a pixel 703 ( i, k) (see FIG. 6).

  Specifically, a set of a subpixel that displays blue, a subpixel that displays green, and a subpixel that displays red can be used for the pixel 703 (i, k).

  Further, a sub-pixel for displaying cyan, a sub-pixel for displaying magenta, and a sub-pixel for displaying yellow can be used as a set for the pixel 703 (i, k).

  Further, for example, a sub-pixel for displaying white can be used for the pixel in addition to the above set.

  For example, a stack of materials stacked so as to emit white light is used for the layer 553 (j) containing a light-emitting material, and the layer 553 (j) containing a light-emitting material is used as the display element 550 (i, j). The display element 550 (i, j + 1) and the display element 550 (i, j + 2) can be used. Thereby, the display element which inject | emits white light by one process can be formed.

  For example, a colored film CF that includes a region overlapping with the display element 550 (i, j) and transmits red light can be used for the sub-pixel 702 (i, j). Thus, red display can be performed using the sub-pixel 702 (i, j).

  For example, a colored film CF that includes a region overlapping with the display element 550 (i, j + 1) and transmits green light can be used for the sub-pixel 702 (i, j + 1). Accordingly, green display can be performed using the sub-pixel 702 (i, j + 1).

  For example, a colored film CF that includes a region overlapping with the display element 550 (i, j + 2) and transmits blue light can be used for the sub-pixel 702 (i, j + 2). Thus, blue display can be performed using the sub-pixel 702 (i, j + 2).

<Configuration Example of Display Panel 4. >
In addition, the display panel 700 described in this embodiment can include the driver circuit GD or the driver circuit SD (see FIGS. 1A and 10).

<< Drive circuit GD >>
The drive circuit GD has a function of supplying a selection signal based on the control information.

  For example, a function of supplying a selection signal to one scanning line at a frequency of 30 Hz or higher, preferably 60 Hz or higher is provided based on the control information. Thereby, a moving image can be displayed smoothly.

  For example, it has a function of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute based on the control information. Thereby, a still image can be displayed in a state where flicker is suppressed.

  In addition, the display panel can include a plurality of driver circuits. For example, the display panel 700B includes a drive circuit GDA and a drive circuit GDB (see FIG. 11).

  For example, when a plurality of drive circuits are provided, the frequency with which the drive circuit GDA supplies the selection signal and the frequency with which the drive circuit GDB supplies the selection signal can be made different. Specifically, the selection signal can be supplied to another region displaying the moving image at a frequency higher than the frequency of supplying the selection signal to one region displaying the still image. Thereby, a still image can be displayed in a state where flicker is suppressed in one area, and a moving image can be displayed smoothly in another area.

<< Drive circuit SD >>
The drive circuit SD includes a drive circuit SD1 and a drive circuit SD2. The drive circuit SD1 has a function of supplying an image signal based on the information V11, and the drive circuit SD2 has a function of supplying an image signal based on the information V12 (see FIG. 10).

  The drive circuit SD1 or the drive circuit SD2 has a function of generating an image signal and a function of supplying the image signal to a pixel circuit that is electrically connected to one display element. Specifically, it has a function of generating a signal whose polarity is inverted. Thereby, for example, a liquid crystal display element can be driven.

  For example, various sequential circuits such as a shift register can be used for the drive circuit SD.

  For example, an integrated circuit in which the drive circuit SD1 and the drive circuit SD2 are integrated can be used for the drive circuit SD. Specifically, an integrated circuit formed on a silicon substrate can be used for the drive circuit SD.

  For example, the integrated circuit can be mounted on a terminal by using a COG (Chip on glass) method or a COF (Chip on Film) method. Specifically, an integrated circuit can be mounted on a terminal using an anisotropic conductive film.

<Configuration Example of Display Panel 5. >
In addition, the display panel 700 described in this embodiment includes a terminal 519B, a substrate 570, a substrate 770, a bonding layer 505, a functional film 770P, and the like (see FIG. 2A or FIG. 3A).

<< Terminal 519B >>
The terminal 519B includes a conductive film 511B, for example. The terminal 519B can be electrically connected to, for example, the signal line S1 (j).

<< Substrate 570, Substrate 770 >>
The substrate 770 includes a region overlapping with the substrate 570. The substrate 770 includes a region that sandwiches the functional layer 520 with the substrate 570.

  The substrate 770 includes a region overlapping with the display element 550 (i, j). For example, a material in which birefringence is suppressed can be used for the region.

<< Junction Layer 505 >>
The bonding layer 505 includes a region sandwiched between the functional layer 520 and the substrate 570 and has a function of bonding the functional layer 520 and the substrate 570 together.

<< Functional film 770P, etc. >>
The functional film 770P includes a region overlapping with the display element 550 (i, j).

<Examples of components>
The display panel 700 includes the substrate 570, the substrate 770, or the bonding layer 505.

  The display panel 700 includes the functional layer 520, the insulating film 521, the insulating film 528, the insulating film 516, the insulating film 503, or the insulating film 506.

  In addition, the display panel 700 includes the signal line S2 (j), the scanning line G2 (i), or the conductive film ANO.

  In addition, the display panel 700 includes a terminal 519B or a conductive film 511B.

  The display panel 700 includes a pixel circuit 530 (i, j) or a transistor M.

  The display panel 700 includes the display element 550 (i, j), the electrode 551 (i, j), the electrode 552, or a layer 553 (j) containing a light-emitting material.

  In addition, the display panel 700 includes an insulating film 501B and an insulating film 501C.

  In addition, the display panel 700 includes an insulating film 573.

  In addition, the display panel 700 includes a drive circuit GD or a drive circuit SD.

<< Substrate 570 >>
A material having heat resistance high enough to withstand heat treatment in the manufacturing process can be used for the substrate 570. For example, a material having a thickness of 0.7 mm or less and a thickness of 0.1 mm or more can be used for the substrate 570. Specifically, a material polished to a thickness of about 0.1 mm can be used.

  For example, the areas of the sixth generation (1500 mm × 1850 mm), the seventh generation (1870 mm × 2200 mm), the eighth generation (2200 mm × 2400 mm), the ninth generation (2400 mm × 2800 mm), the tenth generation (2950 mm × 3400 mm), etc. A large glass substrate can be used for the substrate 570. Thus, a large display device can be manufactured.

  An organic material, an inorganic material, a composite material of an organic material and an inorganic material, or the like can be used for the substrate 570. For example, an inorganic material such as glass, ceramics, or metal can be used for the substrate 570.

  Specifically, alkali-free glass, soda-lime glass, potash glass, crystal glass, aluminosilicate glass, tempered glass, chemically tempered glass, quartz, sapphire, or the like can be used for the substrate 570. Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like can be used for the substrate 570. For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like can be used for the substrate 570. Stainless steel, aluminum, or the like can be used for the substrate 570.

  For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used for the substrate 570. Thus, a semiconductor element can be formed on the substrate 570.

  For example, an organic material such as a resin, a resin film, or plastic can be used for the substrate 570. Specifically, a resin film or a resin plate such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or an acrylic resin can be used for the substrate 570.

  For example, a composite material in which a film such as a metal plate, a thin glass plate, or an inorganic material is attached to a resin film or the like can be used for the substrate 570. For example, a composite material in which a fibrous or particulate metal, glass, inorganic material, or the like is dispersed in a resin film can be used for the substrate 570. For example, a composite material in which a fibrous or particulate resin or an organic material is dispersed in an inorganic material can be used for the substrate 570.

  Further, a single layer material or a material in which a plurality of layers is stacked can be used for the substrate 570. For example, a material in which a base material and an insulating film that prevents diffusion of impurities contained in the base material are stacked can be used for the substrate 570. Specifically, a material in which one or a plurality of films selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or the like that prevents diffusion of impurities contained in glass is used for the substrate 570 is used. Can do. Alternatively, a material in which a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like that prevents resin and diffusion of impurities that permeate the resin is stacked can be used for the substrate 570.

  Specifically, a resin film such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or an acrylic resin, a resin plate, a laminated material, or the like can be used for the substrate 570.

  Specifically, a material containing a resin having a siloxane bond such as polyester, polyolefin, polyamide (nylon, aramid, or the like), polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin, or silicone can be used for the substrate 570.

  Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), acrylic, or the like can be used for the substrate 570. Alternatively, a cycloolefin polymer (COP), a cycloolefin copolymer (COC), or the like can be used.

  Further, paper, wood, or the like can be used for the substrate 570.

  For example, a flexible substrate can be used for the substrate 570.

  Note that a method of directly forming a transistor, a capacitor, or the like over a substrate can be used. Alternatively, for example, a method in which a transistor, a capacitor, or the like is formed over a substrate for a process that has heat resistance to heat applied during the manufacturing process, and the formed transistor, capacitor, or the like is transferred to the substrate 570 can be used. Thus, for example, a transistor or a capacitor can be formed over a flexible substrate.

<< Substrate 770 >>
For example, a material that can be used for the substrate 570 can be used for the substrate 770. For example, a material having a light-transmitting property selected from materials that can be used for the substrate 570 can be used for the substrate 770. Alternatively, a material in which an antireflection film of 1 μm or less, for example, is formed on one surface can be used for the substrate 770. Specifically, a stacked film in which three or more dielectric layers are stacked, preferably 5 layers or more, more preferably 15 layers or more can be used for the substrate 770. Thereby, a reflectance can be suppressed to 0.5% or less, preferably 0.08% or less.

  For example, aluminosilicate glass, tempered glass, chemically tempered glass, sapphire, or the like can be suitably used for the substrate 770 disposed on the side close to the display panel user. Thereby, it is possible to prevent the display panel from being damaged or damaged due to use.

  For example, a resin film can be preferably used for the substrate 770. Thereby, a weight can be reduced. Or, for example, it is possible to reduce the frequency of occurrence of breakage due to dropping.

  For example, a material having a thickness of 0.7 mm or less and a thickness of 0.1 mm or more can be used for the substrate 770. Specifically, a polished substrate can be used to reduce the thickness. Thereby, a weight can be reduced.

<< Insulating film 521 >>
For example, an insulating inorganic material, an insulating organic material, or an insulating composite material containing an inorganic material and an organic material can be used for the insulating film 521.

  Specifically, the insulating film 521 can be formed using an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a stacked material in which a plurality selected from these is stacked.

  For example, the insulating film 521 can be a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like, or a film including a stacked material in which a plurality of layers selected from these is stacked. Note that the silicon nitride film is a dense film and has an excellent function of suppressing impurity diffusion.

  For example, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, an acrylic resin, or the like, or a laminated material or a composite material of a plurality of resins selected from these can be used for the insulating film 521. Alternatively, a material having photosensitivity may be used. Accordingly, the insulating film 521 can planarize steps resulting from various structures overlapping with the insulating film 521, for example.

  Note that polyimide has characteristics superior to other organic materials in characteristics such as thermal stability, insulation, toughness, low dielectric constant, low thermal expansion coefficient, and chemical resistance. Thereby, polyimide can be suitably used for the insulating film 521 and the like.

  For example, a film formed using a photosensitive material can be used for the insulating film 521. Specifically, a film formed using photosensitive polyimide, photosensitive acrylic, or the like can be used for the insulating film 521.

  For example, a light-transmitting material can be used for the insulating film 521. Specifically, silicon nitride can be used for the insulating film 521.

<< Insulating film 528 >>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 528. Specifically, a film containing polyimide can be used for the insulating film 528.

<< Insulating film 518 >>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 518.

  For example, a material having a function of suppressing diffusion of oxygen, hydrogen, water, alkali metal, alkaline earth metal, or the like can be used for the insulating film 518. Specifically, a nitride insulating film can be used for the insulating film 518. For example, silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, or the like can be used for the insulating film 518. Thereby, diffusion of impurities into the semiconductor film of the transistor can be suppressed. For example, diffusion of oxygen from the oxide semiconductor film used for the semiconductor film of the transistor to the outside of the transistor can be suppressed. Alternatively, diffusion of hydrogen, water, or the like from the outside of the transistor to the oxide semiconductor film can be suppressed.

  For example, a material having a function of supplying hydrogen or nitrogen can be used for the insulating film 518. Accordingly, hydrogen or nitrogen can be supplied to the film in contact with the insulating film 518. For example, the insulating film 518 can be formed in contact with the oxide semiconductor film, and hydrogen or nitrogen can be supplied to the oxide semiconductor film. Alternatively, conductivity can be imparted to the oxide semiconductor film. Alternatively, the oxide semiconductor film can be used for the second gate electrode.

<< Insulating film 516 >>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 516. Specifically, a stacked film in which films with different manufacturing methods are stacked can be used for the insulating film 516.

  For example, a first film containing silicon oxide or silicon oxynitride having a thickness of 5 nm to 150 nm, preferably 5 nm to 50 nm, and a silicon oxide having a thickness of 30 nm to 500 nm, preferably 50 nm to 400 nm Alternatively, a stacked film in which a second film containing silicon oxynitride or the like is stacked can be used for the insulating film 516.

Specifically, a film in which the spin density of a signal appearing at g = 2.001 derived from a dangling bond of silicon that can be observed by ESR measurement is 3 × 10 ¹⁷ spins / cm ³ or less is a first film. It is preferable to use for. Accordingly, for example, an oxide semiconductor film used for a semiconductor film of a transistor can be protected from damage caused by formation of the insulating film. Alternatively, oxygen captured by silicon defects can be reduced. Alternatively, permeation or movement of oxygen can be facilitated.

For example, the spin density of a signal appearing at g = 2.001 derived from a dangling bond of silicon that can be observed by ESR measurement is less than 1.5 × 10 ¹⁸ spins / cm ³ , and further 1 × 10 ^18. A material having a spins / cm ³ or less is preferably used for the second film.

<< Insulating film 503 >>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 503. Specifically, silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, silicon oxide, silicon oxynitride, or the like can be used for the insulating film 503. Thereby, for example, diffusion of impurities into the semiconductor film of the transistor can be suppressed.

<< Insulating film 506 >>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 506. Specifically, a stacked film in which a first film having a function of suppressing oxygen permeation and a second film having a function of supplying oxygen can be used for the insulating film 506. Accordingly, for example, oxygen can be diffused into the oxide semiconductor film used for the semiconductor film of the transistor.

  Specifically, silicon oxide film, silicon oxynitride film, silicon nitride oxide film, silicon nitride film, aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film A film including a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film can be used for the insulating film 506.

  For example, a film formed in an oxygen atmosphere can be used for the second film. Alternatively, a film into which oxygen is introduced after film formation can be used for the second film. Specifically, oxygen can be introduced after film formation by ion implantation, ion doping, plasma immersion ion implantation, plasma treatment, or the like.

<< Insulating film 573 >>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 573. Specifically, a stacked film in which the insulating films 573A and 573B are stacked can be used for the insulating film 573.

  For example, an oxide or a nitride can be used for the insulating film 573. Specifically, aluminum oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide, silicon nitride, aluminum nitride, or the like can be used for the insulating film 573.

Specifically, it is less than 1 × 10 ⁻² g / (m ² · day), preferably 5 × 10 ⁻³ g / (m ² · day) or less, preferably 1 × 10 ⁻⁴ g / (m ² Day), preferably a film having a water vapor transmission rate of 1 × 10 ⁻⁵ g / (m ² · day) or less, preferably 1 × 10 ⁻⁶ g / (m ² · day) or less. Used for.

  For example, a film that can be formed by a sputtering method can be used for the insulating film 573A. In addition, a film that can be formed by an atomic layer deposition method (ALD method) can be used for the insulating film 573B. Accordingly, for example, a low density region generated in an insulating film formed using a sputtering method can be covered with a dense insulating film formed using an atomic layer deposition method. Alternatively, a region where impurities generated in an insulating film formed by a sputtering method are easily diffused can be covered with a film which is difficult to diffuse impurities formed by an atomic layer deposition method. Alternatively, diffusion of impurities from the outside to the display element can be suppressed.

  Specifically, a film containing aluminum oxide with a thickness of 50 nm to 1000 nm, preferably 100 nm to 300 nm can be used for the insulating film 573A. A film containing aluminum oxide with a thickness of 1 nm to 100 nm, preferably 5 nm to 50 nm can be used for the insulating film 573A.

<< wiring, terminals, conductive film >>
A conductive material can be used for the wiring or the like. Specifically, a material having conductivity can be used for the signal line S2 (j), the scanning line G2 (i), the conductive film ANO, the terminal 519B, the conductive film 511B, or the like.

  For example, an inorganic conductive material, an organic conductive material, a metal, a conductive ceramic, or the like can be used for the wiring.

  Specifically, a metal element selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, or manganese can be used for the wiring or the like. . Alternatively, an alloy containing the above metal element can be used for the wiring or the like. In particular, an alloy of copper and manganese is suitable for fine processing using a wet etching method.

  Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a tantalum nitride film or A two-layer structure in which a tungsten film is stacked on a tungsten nitride film, a titanium film, and a three-layer structure in which an aluminum film is stacked on the titanium film and a titanium film is further formed thereon can be used for wiring or the like. .

  Specifically, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used for the wiring or the like.

  Specifically, a film containing graphene or graphite can be used for the wiring or the like.

  For example, by forming a film containing graphene oxide and reducing the film containing graphene oxide, the film containing graphene can be formed. Examples of the reduction method include a method of applying heat and a method of using a reducing agent.

  For example, a film containing metal nanowires can be used for wiring or the like. Specifically, a nanowire containing silver can be used.

  Specifically, a conductive polymer can be used for wiring or the like.

  Note that, for example, the conductive material ACF1 can be used to electrically connect the terminal 519B and the flexible printed circuit board FPC1. Specifically, the terminal 519B and the flexible printed circuit board FPC1 can be electrically connected using the conductive material CP.

<< Functional film 770P >>
For example, an antireflection film, a polarizing film, a retardation film, or the like can be used for the functional film 770P.

  Specifically, a circularly polarizing film can be used for the functional film 770P.

  In addition, antistatic film that suppresses adhesion of dust, water-repellent film that makes it difficult to adhere dirt, antireflection film (anti-reflection film), non-glossy film (anti-glare film), and scratches caused by use A hard coat film or the like that suppresses the above can be used for the functional film 770P.

<< Display element 550 (i, j) >>
For example, a display element having a function of emitting light can be used for the display element 550 (i, j). Specifically, an organic electroluminescence element, an inorganic electroluminescence element, a light-emitting diode, a QDLED (Quabum Dot LED), or the like can be used for the display element 550 (i, j).

  For example, a light-emitting organic compound can be used for the layer 553 (j) containing a light-emitting material.

  For example, a stacked material stacked so as to emit white light can be used for the layer 553 (j) including a light-emitting material. Specifically, a layer containing a luminescent material including a fluorescent material that emits blue light, a layer containing a material other than a fluorescent material that emits green and red light, or a fluorescent material that emits yellow light A layered material in which a layer including any of the above materials is stacked can be used for the layer 553 (j) including a light-emitting material.

  For example, a material that can be used for wiring or the like can be used for the electrode 551 (i, j).

  For example, a material having a property of transmitting visible light and selected from materials that can be used for wirings or the like can be used for the electrode 551 (i, j).

  Specifically, a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like is used as the electrode 551 (i, j). Can be used. Alternatively, a metal film that is thin enough to transmit light can be used for the electrode 551 (i, j). Alternatively, a metal film that transmits part of light and reflects another part of light can be used for the electrode 551 (i, j). Accordingly, the microresonator structure can be provided in the second display element 550 (i, j). As a result, light with a predetermined wavelength can be extracted more efficiently than other light.

  For example, a material that can be used for wiring or the like can be used for the electrode 552. Specifically, a material having reflectivity with respect to visible light can be used for the electrode 552.

  For example, a strip-shaped stacked material that is long in the column direction along the signal line S2 (j) can be used for the layer 553 (j) containing a light-emitting material.

<< Electrode 551 (i, j), Electrode 552 >>
For example, a material having a property of transmitting visible light and selected from materials that can be used for wirings or the like can be used for the electrode 551 (i, j).

  Specifically, a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like is used as the electrode 551 (i, j). Can be used. Alternatively, a metal film that is thin enough to transmit light can be used for the electrode 551 (i, j). Alternatively, a metal film that transmits part of light and reflects another part of light can be used for the electrode 551 (i, j). Thereby, a microresonator structure can be provided in the display element 550 (i, j). As a result, light with a predetermined wavelength can be extracted more efficiently than other light.

  For example, a material that can be used for wiring or the like can be used for the electrode 552. Specifically, a material having reflectivity with respect to visible light can be used for the electrode 552.

<< Drive circuit GD >>
Various sequential circuits such as a shift register can be used for the drive circuit GD. For example, a transistor MD, a capacitor, or the like can be used for the drive circuit GD. Specifically, a transistor that can be used for the switch SW1 or a transistor including a semiconductor film that can be formed in the same process as the transistor M can be used.

  For example, the same structure as the transistor M can be used for the transistor MD.

  For example, a different structure from the transistor that can be used for the transistor M can be used for the transistor MD. Specifically, a metal film can be used for the conductive films 512C, 512D, and 504E (see FIG. 2C). Thereby, the electrical resistance of the conductive film which also functions as a wiring can be reduced. Alternatively, external light traveling toward the region 508C can be blocked. Alternatively, abnormality in the electrical characteristics of the transistor due to external light can be prevented. Alternatively, the reliability of the transistor can be improved.

<Transistor>
For example, a semiconductor film that can be formed in the same process can be used for a transistor in a driver circuit and a pixel circuit.

  For example, a bottom-gate transistor, a top-gate transistor, or the like can be used as a driver circuit transistor or a pixel circuit transistor.

  By the way, for example, a bottom-gate transistor production line using amorphous silicon as a semiconductor can be easily modified to a bottom-gate transistor production line using an oxide semiconductor as a semiconductor. For example, a top gate type production line using polysilicon as a semiconductor can be easily modified to a top gate type transistor production line using an oxide semiconductor as a semiconductor. Both modifications can make effective use of existing production lines.

  For example, a transistor in which an oxide semiconductor is used for a semiconductor film can be used. Specifically, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used for the semiconductor film.

  As an example, a transistor whose leakage current in an off state is smaller than that of a transistor using amorphous silicon as a semiconductor film can be used. Specifically, a transistor in which an oxide semiconductor is used for a semiconductor film can be used.

  Accordingly, as compared with a pixel circuit using a transistor using amorphous silicon as a semiconductor film, the time during which the pixel circuit can hold an image signal can be lengthened. Specifically, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute while suppressing the occurrence of flicker. As a result, fatigue accumulated in the user of the information processing apparatus can be reduced. In addition, power consumption associated with driving can be reduced.

  For example, a transistor including the semiconductor film 508, the conductive film 504, the conductive film 512A, and the conductive film 512B can be used for the transistor M (see FIG. 2B). Note that the insulating film 506 includes a region sandwiched between the semiconductor film 508 and the conductive film 504.

  The conductive film 504 includes a region overlapping with the semiconductor film 508. The conductive film 504 has a function of a gate electrode. The insulating film 506 has a function of a gate insulating film.

  The conductive films 512A and 512B are electrically connected to the semiconductor film 508. The conductive film 512A has one of the function of the source electrode and the function of the drain electrode, and the conductive film 512B has the other of the function of the source electrode and the function of the drain electrode.

  A transistor including the conductive film 524 can be used for a transistor in a driver circuit or a pixel circuit (see FIG. 2B or FIG. 2C). The conductive film 524 includes a region in which the semiconductor film 508 is sandwiched between the conductive film 504 and the conductive film 504. Note that the insulating film 516 includes a region sandwiched between the conductive film 524 and the semiconductor film 508. For example, the conductive film 524 can be electrically connected to a wiring that supplies the same potential as the conductive film 504.

  For example, a conductive film in which a 10-nm-thick film containing tantalum and nitrogen and a 300-nm-thick film containing copper are stacked can be used for the conductive film 504E of the transistor MD. Note that the film containing copper includes a region between which the film containing tantalum and nitrogen is sandwiched between the film containing copper.

  For example, a stacked film in which a 400-nm-thick film containing silicon and nitrogen and a 200-nm-thick film containing silicon, oxygen, and nitrogen are stacked can be used for the insulating film 506. Note that the film containing silicon and nitrogen includes a region between the semiconductor film 508 and the film containing silicon, oxygen, and nitrogen.

  For example, a 25-nm-thick film containing indium, gallium, and zinc can be used for the semiconductor film 508.

  For example, a conductive film in which a 50-nm-thick film containing tungsten, a 400-nm-thick film containing aluminum, and a 100-nm-thick film containing titanium are stacked in this order, the conductive film 512C of the transistor MD or the conductive film It can be used for the film 512D. Note that the film containing tungsten includes a region in contact with the semiconductor film 508.

<Configuration Example of Display Panel 6. >
The structure of the display panel of one embodiment of the present invention is described with reference to FIGS.

  7 and 8 are cross-sectional views illustrating the structure of the display panel. FIG. 7A is a cross-sectional view at a position corresponding to the cutting line X1-X2, the cutting line X3-X4, and the cutting line X5-X6 in FIG. (C) is a figure explaining a part of FIG. 7 (A).

  8A is a cross-sectional view at a position corresponding to the cutting line X7-X8 in FIG. 4 and the cutting line X9-X10 in FIG.

  The display panel described in this embodiment is different from the display panel described with reference to FIGS. 2 and 3 in that a top-gate transistor is provided.

<Configuration Example of Display Panel 7. >
The structure of the display panel of one embodiment of the present invention is described with reference to FIGS.

  FIG. 9 illustrates the structure of the display panel of one embodiment of the present invention. 9A1 and 9A2 are schematic top views when the pixel 900 is viewed from the display surface side. FIG. 9B is a cross-sectional view taken along line AB in FIG. 9A2.

<< Pixel Configuration Example 4 >>
FIG. 9A1 is a schematic top view of the pixel 900 as viewed from the display surface side. A pixel 900 illustrated in FIG. 9A1 includes three subpixels. Each subpixel is provided with a light-emitting element 930EL (not illustrated in FIGS. 9A1 and 9A2), a transistor 910, and a transistor 912. In each subpixel illustrated in FIG. 9A1, a light-emitting region (light-emitting region 916R, light-emitting region 916G, or light-emitting region 916B) of the light-emitting element 930EL is illustrated. Note that the light-emitting element 930 </ b> EL is a so-called bottom emission light-emitting element that emits light to the transistor 910 and the transistor 912 side.

  The pixel 900 includes a wiring 902, a wiring 904, a wiring 906, and the like. The wiring 902 functions as, for example, a scanning line. The wiring 904 functions as a signal line, for example. The wiring 906 functions as a power supply line for supplying a potential to the light emitting element, for example. In addition, the wiring 902 and the wiring 904 have portions that intersect each other. In addition, the wiring 902 and the wiring 906 have portions that cross each other. Note that although the structure in which the wiring 902 and the wiring 904 and the wiring 902 and the wiring 906 intersect with each other is illustrated here, the present invention is not limited to this, and a structure in which the wiring 904 and the wiring 906 intersect may be employed.

  The transistor 910 functions as a selection transistor. A gate of the transistor 910 is electrically connected to the wiring 902. One of a source and a drain of the transistor 910 is electrically connected to the wiring 904.

  The transistor 912 is a transistor that controls current flowing in the light-emitting element. A gate of the transistor 912 is electrically connected to the other of the source and the drain of the transistor 910. One of a source and a drain of the transistor 912 is electrically connected to the wiring 906, and the other is electrically connected to one of the pair of electrodes of the light-emitting element 930EL.

  In FIG. 9A1, the light-emitting region 916R, the light-emitting region 916G, and the light-emitting region 916B each have a long strip shape in the vertical direction and are arranged in stripes in the horizontal direction.

  Here, the wiring 902, the wiring 904, and the wiring 906 have a light shielding property. In addition, it is preferable to use a light-transmitting film for the other layers, that is, the layers constituting the transistor 910, the transistor 912, the wiring connected to the transistor, the contact, the capacitor, and the like. FIG. 9A2 illustrates an example in which the pixel 900 illustrated in FIG. 9A1 is divided into a transmission region 900t that transmits visible light and a light-blocking region 900s that blocks visible light. In this manner, when a transistor is manufactured using a light-transmitting film, a portion other than a portion where each wiring is provided can be a transmission region 900t. In addition, since the light-emitting region of the light-emitting element can be overlapped with a transistor, a wiring connected to the transistor, a contact, a capacitor, or the like, the aperture ratio of the pixel can be increased.

  Note that the higher the ratio of the area of the transmissive region to the area of the pixel, the higher the light extraction efficiency of the light emitting element. For example, the ratio of the area of the transmissive region to the area of the pixel can be 1% to 95%, preferably 10% to 90%, more preferably 20% to 80%. In particular, it is preferably 40% or more or 50% or more, and more preferably 60% or more and 80% or less.

  FIG. 9B is a cross-sectional view corresponding to a cross-sectional surface taken along dashed-dotted line AB in FIG. 9A2. Note that in FIG. 9B, cross sections of the light-emitting element 930EL, the capacitor 913, the driver circuit portion 901, and the like which are not illustrated in the top view are also illustrated. The driver circuit portion 901 can be used as a scanning line driver circuit portion or a signal line driver circuit portion. In addition, the driver circuit portion 901 includes a transistor 911.

  As shown in FIG. 9B, light from the light-emitting element 930EL is emitted in the direction indicated by the dashed arrow. Light from the light-emitting element 930EL is extracted to the outside through the transistor 910, the transistor 912, the capacitor 913, and the like. Therefore, it is preferable that the film and the like included in the capacitor 913 have a light-transmitting property. As the area of the light-transmitting region included in the capacitor 913 is larger, attenuation of light emitted from the light-emitting element 930EL can be suppressed.

  Note that in the driver circuit portion 901, the transistor 911 may be light-blocking. By making the transistor 911 and the like of the driver circuit portion 901 light-shielding, the reliability and driving ability of the driver circuit portion can be improved. That is, it is preferable to use a light-shielding conductive film for the gate electrode, the source electrode, and the drain electrode included in the transistor 911. Similarly, it is preferable to use a light-shielding conductive film for the wiring connected thereto.

  For the transistor, the wiring, the capacitor, and the like illustrated in FIG. 9, the following materials can be used.

  A semiconductor film included in the transistor can be formed using a light-transmitting semiconductor material. As the light-transmitting semiconductor material, a metal oxide, an oxide semiconductor, or the like can be given. The oxide semiconductor preferably contains at least indium. In particular, it is preferable to contain indium and zinc. In addition, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. One kind selected from the above or a plurality of kinds may be included.

  The conductive film included in the transistor can be formed using a light-transmitting conductive material. The light-transmitting conductive material preferably includes one or more selected from indium, zinc, and tin. Specifically, an In oxide, an In—Sn oxide (also referred to as ITO: Indium Tin Oxide), an In—Zn oxide, an In—W oxide, an In—W—Zn oxide, an In—Ti oxide, In-Sn-Ti oxide, In-Sn-Si oxide, Zn oxide, Ga-Zn oxide, and the like can be given.

  Alternatively, an oxide semiconductor whose resistance is reduced by adding an impurity element to the conductive film included in the transistor may be used. The low-resistance oxide semiconductor can be referred to as an oxide conductor (OC).

  For example, in an oxide conductor, an oxygen vacancy is formed in an oxide semiconductor, and hydrogen is added to the oxygen vacancy, whereby a donor level is formed in the vicinity of the conduction band. When the donor level is formed in the oxide semiconductor, the oxide semiconductor has high conductivity and becomes a conductor.

  Note that an oxide semiconductor has a large energy gap (e.g., an energy gap of 2.5 eV or more); thus, the oxide semiconductor has a light-transmitting property with respect to visible light. As described above, the oxide conductor is an oxide semiconductor having a donor level in the vicinity of the conduction band. Therefore, the oxide conductor is less influenced by absorption due to the donor level, and has a light-transmitting property similar to that of an oxide semiconductor with respect to visible light.

  In addition, the oxide conductor preferably includes one or more metal elements contained in a semiconductor film included in the transistor. By using an oxide semiconductor including the same metal element for two or more layers included in a transistor, a manufacturing apparatus (eg, a film formation apparatus or a processing apparatus) can be used in common for two or more steps. Since it becomes possible, manufacturing cost can be suppressed.

  With the structure of the pixel included in the display device described in this embodiment, light emitted from one or both of the light-emitting element and the backlight unit can be efficiently used. Therefore, an excellent display device in which power consumption is suppressed can be provided.

  Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 2)
In this embodiment, a metal oxide that can be used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention will be described. Note that in the case where a metal oxide is used for the semiconductor layer of the transistor, the metal oxide may be read as an oxide semiconductor.

  An oxide semiconductor is classified into a single crystal oxide semiconductor and a non-single-crystal oxide semiconductor. As the non-single-crystal oxide semiconductor, a CAAC-OS (c-axis-aligned crystal oxide semiconductor), a polycrystalline oxide semiconductor, an nc-OS (nanocrystalline oxide semiconductor), a pseudo-amorphous oxide semiconductor (a-like oxide semiconductor) : Amorphous-like oxide semiconductor) and amorphous oxide semiconductor.

  Alternatively, a CAC-OS (Cloud-Aligned Composite Oxide Semiconductor) may be used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention.

  Note that the above-described non-single-crystal oxide semiconductor or CAC-OS can be preferably used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention. As the non-single-crystal oxide semiconductor, nc-OS or CAAC-OS can be preferably used.

  Note that in one embodiment of the present invention, a CAC-OS is preferably used as the semiconductor layer of the transistor. With the use of the CAC-OS, high electrical characteristics or high reliability can be imparted to the transistor.

  Details of the CAC-OS will be described below.

  The CAC-OS or the CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a function as a semiconductor in the whole material. Note that in the case where a CAC-OS or a CAC-metal oxide is used for a channel formation region of a transistor, the conductive function is a function of flowing electrons (or holes) serving as carriers and the insulating function is a carrier. This function prevents electrons from flowing. By performing the conductive function and the insulating function in a complementary manner, a switching function (function to turn on / off) can be given to the CAC-OS or the CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating each function, both functions can be maximized.

  Further, the CAC-OS or the CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. In the material, the conductive region and the insulating region may be separated at the nanoparticle level. In addition, the conductive region and the insulating region may be unevenly distributed in the material, respectively. In addition, the conductive region may be observed with the periphery blurred and connected in a cloud shape.

  In CAC-OS or CAC-metal oxide, the conductive region and the insulating region are each dispersed in a material with a size of 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. There is.

  Further, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxide includes a component having a wide gap caused by an insulating region and a component having a narrow gap caused by a conductive region. In the case of the configuration, when the carrier flows, the carrier mainly flows in the component having the narrow gap. In addition, the component having a narrow gap acts in a complementary manner to the component having a wide gap, and the carrier flows through the component having the wide gap in conjunction with the component having the narrow gap. Therefore, when the CAC-OS or the CAC-metal oxide is used for a channel formation region of a transistor, high current driving capability, that is, high on-state current and high field-effect mobility can be obtained in the on-state of the transistor.

  That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite or a metal matrix composite.

  The CAC-OS is one structure of a material in which an element constituting a metal oxide is unevenly distributed with a size of 0.5 nm to 10 nm, preferably, 1 nm to 2 nm or near. In the following, in a metal oxide, one or more metal elements are unevenly distributed, and a region having the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm or near. The mixed state is also called mosaic or patch.

  Note that the metal oxide preferably contains at least indium. In particular, it is preferable to contain indium and zinc. In addition, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. One kind or plural kinds selected from may be included.

For example, a CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide among CAC-OSs may be referred to as CAC-IGZO in particular) is an indium oxide (hereinafter referred to as InO). _X1 (X1 is greater real than 0) and.), or indium zinc oxide _{(hereinafter, in X2 Zn Y2 O Z2 (} X2, Y2, and Z2 is larger real than 0) and a.), gallium An oxide (hereinafter referred to as GaO _X3 (X3 is a real number greater than 0)) or a gallium zinc oxide (hereinafter referred to as Ga _X4 Zn _Y4 O _Z4 (where X4, Y4, and Z4 are greater than 0)) to.) and the like, the material becomes mosaic by separate into, mosaic _{InO X1} or _in X2 _Zn Y2 _{O Z2,} is a configuration in which uniformly distributed in the film (hereinafter, click Also called Udo-like.) A.

That, CAC-OS includes a region _{GaO X3} is the main _component, and In _{X2 Zn} Y2 _{O Z2,} or _{InO X1} is the main component region is a composite metal oxide having a structure that is mixed. Note that in this specification, for example, the first region indicates that the atomic ratio of In to the element M in the first region is larger than the atomic ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that in the second region.

Note that IGZO is a common name and sometimes refers to one compound of In, Ga, Zn, and O. As a typical example, InGaO ₃ (ZnO) _m1 (m1 is a natural number) or In _{(1 + x0)} Ga _(1-x0) O ₃ (ZnO) _m0 (−1 ≦ x0 ≦ 1, m0 is an arbitrary number) A crystalline compound may be mentioned.

  The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC (c-axis aligned crystal) structure. The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without being oriented in the ab plane.

  On the other hand, CAC-OS relates to a material structure of a metal oxide. CAC-OS refers to a region that is observed in the form of nanoparticles mainly composed of Ga in a material structure including In, Ga, Zn, and O, and nanoparticles that are partially composed mainly of In. The region observed in a shape is a configuration in which the regions are randomly dispersed in a mosaic shape. Therefore, in the CAC-OS, the crystal structure is a secondary element.

  Note that the CAC-OS does not include a stacked structure of two or more kinds of films having different compositions. For example, a structure composed of two layers of a film mainly containing In and a film mainly containing Ga is not included.

Incidentally, a region _{GaO X3} is the main _component, and In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component region, in some cases clear boundary can not be observed.

  In place of gallium, aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium are selected. In the case where one or a plurality of types are included, the CAC-OS includes a region that is observed in a part of a nanoparticle mainly including the metal element and a nanoparticle mainly including In. The region observed in the form of particles refers to a configuration in which each region is randomly dispersed in a mosaic shape.

  The CAC-OS can be formed by a sputtering method under a condition where the substrate is not intentionally heated, for example. In the case where a CAC-OS is formed by a sputtering method, any one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as a deposition gas. Good. Further, the flow rate ratio of the oxygen gas to the total flow rate of the deposition gas during film formation is preferably as low as possible. .

  The CAC-OS is characterized in that no clear peak is observed when it is measured using a θ / 2θ scan by the out-of-plane method, which is one of the X-ray diffraction (XRD) measurement methods. Have. That is, it can be seen from X-ray diffraction that no orientation in the ab plane direction and c-axis direction of the measurement region is observed.

  In addition, in the CAC-OS, an electron diffraction pattern obtained by irradiating an electron beam with a probe diameter of 1 nm (also referred to as a nanobeam electron beam) has a ring-like region having a high luminance and a plurality of bright regions in the ring region. A point is observed. Therefore, it can be seen from the electron beam diffraction pattern that the crystal structure of the CAC-OS has an nc (nano-crystal) structure having no orientation in the planar direction and the cross-sectional direction.

Further, for example, in a CAC-OS in an In—Ga—Zn oxide, a region in which GaO _X3 is a main component is obtained by EDX mapping obtained by using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is unevenly distributed and mixed.

The CAC-OS has a structure different from that of the IGZO compound in which the metal element is uniformly distributed, and has a property different from that of the IGZO compound. That is, in the CAC-OS, a region in which GaO _X3 or the like is a main component and a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component are phase-separated from each other, and a region in which each element is a main component. Has a mosaic structure.

Here, the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component is a region having higher conductivity than a region containing GaO _X3 or the like as a main component. _That, In _{X2 Zn} Y2 _{O Z2} or _{InO X1,} is an area which is the main component, by carriers flow, expressed the conductivity of the oxide semiconductor. Accordingly, a region where In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is distributed in a cloud shape in the oxide semiconductor, whereby high field-effect mobility (μ) can be realized.

On the other hand, areas such as _{GaO X3} is the main _component, as compared to the In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component area, it is highly regions insulating. That is, a region containing GaO _X3 or the like as a main component is distributed in the oxide semiconductor, whereby leakage current can be suppressed and good switching operation can be realized.

Therefore, when CAC-OS is used for a semiconductor element, the insulating property caused by GaO _{X3 and the} like and the conductivity caused by In _X2 Zn _Y2 O _Z2 or InO _X1 act in a complementary manner, resulting in high An on-current (I _on ) and high field effect mobility (μ) can be realized.

  In addition, a semiconductor element using a CAC-OS has high reliability. Therefore, the CAC-OS is optimal for various semiconductor devices including a display.

  This embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 3)
In this embodiment, the structure of the display device of one embodiment of the present invention will be described with reference to FIGS.

  FIG. 10A is a block diagram illustrating the structure of a display device of a display device of one embodiment of the present invention. FIG. 10B is a block diagram illustrating a structure of the pixel shown in FIG.

  FIG. 11A is a block diagram illustrating a structure different from the structure of the display panel illustrated in FIG. 11B-1 to 11B-3 illustrate the appearance of a display device of one embodiment of the present invention.

<Configuration example of display device>
The display device described in this embodiment includes a control portion 238 and a display panel 700 (see FIG. 10A).

<Control unit 238>
The control unit 238 has a function to which the image information V1 and the control information SS are supplied.

  The control unit 238 has a function of generating information V12 based on the image information V1. The control unit 238 has a function of supplying the information V12.

  For example, the control unit 238 includes a decompression circuit 234 and an image processing circuit 235M.

<< Display panel 700 >>
The display panel 700 has a function of being supplied with the information V12. The display panel 700 includes a pixel 702 (i, j).

  The pixel 702 (i, j) includes a display element 550 (i, j) (see FIG. 10B).

  The display element 550 (i, j) has a function of displaying based on the information V12, and the display element 550 (i, j) is a light emitting element.

  For example, the display panel described in Embodiment 1 can be used for the display panel 700. For example, a television receiver system (see FIG. 11B-1), a video monitor (see FIG. 11B-2), a notebook computer (see FIG. 11B-3), or the like can be provided. .

  Thereby, image information can be displayed using a display element. As a result, a novel display device that is highly convenient or reliable can be provided.

<< Extension circuit 234 >>
The expansion circuit 234 has a function of expanding the image information V1 supplied in a compressed state. The decompression circuit 234 includes a storage unit. The storage unit has a function of storing, for example, decompressed image information.

<< Image processing circuit 235M >>
The image processing circuit 235M includes a region, for example.

  The area has a function of storing information included in the image information V1, for example.

  The image processing circuit 235M includes, for example, a function of correcting the image information V1 based on a predetermined characteristic curve to generate the information V12 and a function of supplying the information V12. Specifically, a function for generating the information V12 is provided so that the display element 550 (i, j) displays a good image.

  Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 4)
In this embodiment, the structure of the input / output device of one embodiment of the present invention is described with reference to FIGS.

  FIG. 12 is a block diagram illustrating a structure of the input / output device of one embodiment of the present invention.

<Configuration example of input / output device>
The input / output device described in this embodiment includes an input unit 240 and a display unit 230 (see FIG. 12). For example, the display panel 700 described in Embodiment 1 can be used for the display portion 230.

  The input unit 240 includes a detection area 241. The input unit 240 has a function of detecting an object close to the detection area 241.

  The detection region 241 includes a region overlapping with the pixel 702 (i, j).

<< Input unit 240 >>
The input unit 240 includes a detection area 241. The input unit 240 can include an oscillation circuit OSC and a detection circuit DC (see FIG. 12).

<< Detection area 241 >>
The detection region 241 can include, for example, one or more detection elements.

  The detection region 241 includes a group of detection elements 775 (g, 1) to detection elements 775 (g, q) and another group of detection elements 775 (1, h) to detection elements 775 (p, h). (See FIG. 12). Note that g is an integer of 1 to p, h is an integer of 1 to q, and p and q are integers of 1 or more.

  The group of sensing elements 775 (g, 1) to 775 (g, q) includes the sensing elements 775 (g, h) and are arranged in the row direction (direction indicated by an arrow R2 in the drawing). Note that the direction indicated by arrow R2 in FIG. 12 may be the same as or different from the direction indicated by arrow R1 in FIG.

  Further, another group of the detection elements 775 (1, h) to 775 (p, h) includes the detection elements 775 (g, h), and the column direction intersecting the row direction (indicated by an arrow C2 in the drawing) (Direction shown).

<< Sensing element >>
The detection element has a function of detecting an adjacent pointer. For example, a finger or a stylus pen can be used as the pointer. For example, a metal piece or a coil can be used for the stylus pen.

  Specifically, a capacitive proximity sensor, an electromagnetic induction proximity sensor, an optical proximity sensor, a resistive proximity sensor, or the like can be used as the detection element.

  A plurality of types of sensing elements can also be used in combination. For example, a detection element that detects a finger and a detection element that detects a stylus pen can be used in combination. Thereby, the type of the pointer can be determined. Alternatively, different instructions can be associated with the detection information based on the determined type of pointer. Specifically, when it is determined that a finger is used as the pointer, the detection information can be associated with the gesture. Alternatively, when it is determined that the stylus pen is used as the pointer, the detection information can be associated with the drawing process.

  Specifically, a finger can be detected by using a capacitive or optical proximity sensor. Alternatively, the stylus pen can be detected using an electromagnetic induction type or optical type proximity sensor.

  Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 5)
In this embodiment, the structure of the input / output panel of one embodiment of the present invention is described with reference to FIGS.

  FIG. 13 illustrates a structure of an input / output panel that can be used in the input / output device of one embodiment of the present invention. FIG. 13A is a top view of the input / output panel. 13B and 13C are projection views for explaining a part of FIG. 13A.

  FIG. 14 illustrates a structure of an input / output panel that can be used in the input / output device of one embodiment of the present invention. FIG. 14A is a top view of adjacent portions of the control line and the detection signal line. FIG. 14B is a projection diagram schematically illustrating the electric field generated in the adjacent portion.

<Configuration example of input / output panel>
The input / output panel described in this embodiment is different from, for example, the display panel 700 described in Embodiment 1 in that a detection region 241 is provided. Here, different portions will be described in detail, and the above description will be applied to portions that can use the same configuration.

<< Detection area 241 >>
The detection region 241 includes a control line CL (g), a detection signal line ML (h), and a conductive film. The conductive film includes a sensing element 775 (g, h) (see FIGS. 12 and 13A).

  For example, a conductive film divided into a plurality of regions can be used for the detection region 241 (see FIG. 12 or FIG. 13). Thereby, different potentials can be supplied to each of the plurality of regions.

  Specifically, a conductive film that is divided into a conductive film that can be used for the control line CL (g) and a conductive film that can be used for the detection signal line ML (h) is used for the detection region 241. it can. In addition, for example, a rectangular conductive film can be used for each of the conductive films divided into the plurality of regions (see FIGS. 14, 2A, and 3). Thereby, the divided conductive film can be used as the electrode of the sensing element. Alternatively, a different potential can be supplied to the control line. Alternatively, an in-cell input / output panel can be provided. Or the member which comprises an input-output panel can be reduced.

  For example, a conductive film that can be used for the control line CL (g), a conductive film that can be used for the detection signal line ML (h), and a conductive film that can be used for the detection signal line ML (h + 1). The divided conductive films are adjacent to each other in the adjacent portion X0 (see FIG. 13A, FIG. 13C, or FIG. 14).

  The detection element 775 (g, h) is electrically connected to the control line CL (g) and the detection signal line ML (h) (see FIG. 13A).

  Note that the control line CL (g) has a function of supplying a control signal, and the detection signal line ML (h) has a function of supplying a detection signal.

<< Sensing element 775 (g, h) >>
The detection element 775 (g, h) has a function of supplying a detection signal that changes based on a control signal and a distance from an area close to the region overlapping with the pixel 702 (i, j). In addition, the detection element 775 (g, h) includes an electrode C (g) and an electrode M (h) (see FIG. 14B).

  The electrode C (g) includes a light-transmitting region in a region overlapping with the pixel 702 (i, j), and the electrode C (g) is electrically connected to the control line CL (g). The electrode C (g) can be referred to as a control electrode. Further, the same conductive film as that used for the control line CL (g) can be used for the electrode C (g), so that the control line CL (g) and the electrode C (g) can be integrated.

  The electrode M (h) includes a light-transmitting region in a region overlapping with the pixel 702 (i, j), and the electrode M (h) is electrically connected to the detection signal line ML (h) (FIG. 2). (See (A) and FIG. 3). In addition, the electrode M (h) is disposed so as to form an electric field between the electrode M (h) and the control electrode C (g) that is partially blocked by an object adjacent to the region overlapping the pixel 702 (i, j) (FIG. 14 (B)). The electrode M (h) can be referred to as a detection electrode. Further, the same conductive film as that used for the detection signal line ML (h) is used for the electrode M (h), so that the detection signal line ML (h) and the electrode M (h) can be integrated.

  For example, when a control signal is supplied to the control line CL (g), an electric field is formed between the electrode C (g) and the electrode M (h) or between the electrode C (g) and the electrode M (h + 1) (FIG. 14 (B)). For example, a part of the electric field formed between the electrode C (g) and the electrode M (h) is blocked by a nearby finger or the like.

  Accordingly, it is possible to detect an object that is close to a region overlapping with the display unit while displaying image information using the display unit. Alternatively, position information can be input using a finger or the like that is brought close to the display portion as a pointer. Alternatively, the position information can be associated with image information displayed on the display unit. As a result, a novel input / output device that is highly convenient or reliable can be provided.

<< Oscillation circuit OSC >>
The oscillation circuit OSC is electrically connected to the control line CL (g) and has a function of supplying a control signal. For example, a rectangular wave, a sawtooth wave, a triangular wave, or the like can be used as the control signal.

<< Detection circuit DC >>
The detection circuit DC is electrically connected to the detection signal line ML (h) and has a function of supplying a detection signal based on a change in potential of the detection signal line ML (h). The detection signal includes, for example, position information P1.

<< Display unit 230 >>
For example, the display panel described in Embodiment 1 can be used for the display portion 230. Alternatively, the display device described in Embodiment 3 can be used for the display portion 230.

<< Sensing element 775 (g, h) >>
The detection element 775 (g, h) includes an electrode C (g) and a detection signal line ML (h).

  For example, a conductive film having a light-transmitting property can be used for the electrode C (g) and the detection signal line ML (h). Alternatively, a conductive film including an opening in a region overlapping with the pixel 702 (i, j) can be used for the electrode C (g) and the detection signal line ML (h). Accordingly, it is possible to detect an object close to a region overlapping with the display panel without blocking the display on the display panel.

  The detection region 241 includes a group of detection elements 775 (g, 1) to detection elements 775 (g, q) and another group of detection elements 775 (1, h) to detection elements 775 (p, h). (See FIG. 12). Note that g is an integer of 1 to p, h is an integer of 1 to q, and p and q are integers of 1 or more.

  The group of sensing elements 775 (g, 1) to 775 (g, q) includes the sensing elements 775 (g, h) and are arranged in the row direction (direction indicated by an arrow R2 in the drawing). Note that the direction indicated by arrow R2 in FIG. 12 may be the same as or different from the direction indicated by arrow R1 in FIG.

  Further, another group of the detection elements 775 (1, h) to 775 (p, h) includes the detection elements 775 (g, h), and the column direction intersecting the row direction (indicated by an arrow C2 in the drawing) (Direction shown).

  The group of sensing elements 775 (g, 1) to 775 (g, q) arranged in the row direction includes an electrode C (g) electrically connected to the control line CL (g) (FIG. 13 (B) or FIG. 13 (C)). For example, a conductive film that can be formed in the same step can be used for the control line CL (g) and the electrode C (g).

  Another group of the detection elements 775 (1, h) to 775 (p, h) arranged in the column direction has electrodes M (h) electrically connected to the detection signal lines ML (h). Including. For example, a conductive film that can be formed in the same step can be used for the control line ML (h) and the electrode M (h).

  The detection signal line ML (h) includes a conductive film BR (g, h) (see FIG. 13B and FIG. 4). The conductive film BR (g, h) includes a region overlapping with the control line CL (g).

  Note that the detection element 775 (g, h) includes an insulating film. The insulating film includes a region sandwiched between the detection signal line ML (h) and the conductive film BR (g, h). Thereby, short circuit of the detection signal line ML (h) and the conductive film BR (g, h) can be prevented.

  Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 6)
In this embodiment, a structure of an information processing device of one embodiment of the present invention will be described with reference to FIGS.

  FIG. 15A is a block diagram illustrating a structure of an information processing device of one embodiment of the present invention. FIG. 15B and FIG. 15C are projection views for explaining an example of the appearance of the information processing apparatus 200.

  FIG. 16 is a flowchart illustrating a program of one embodiment of the present invention. FIG. 16A is a flowchart illustrating main processing of a program of one embodiment of the present invention, and FIG. 16B is a flowchart illustrating interrupt processing.

  FIG. 17 illustrates a program according to one embodiment of the present invention. FIG. 17A is a flowchart illustrating a program interrupt process of one embodiment of the present invention, and FIG. 17B is a timing chart illustrating operation of the information processing device of one embodiment of the present invention.

<Configuration example 1 of information processing apparatus>>
The information processing device 200 described in this embodiment includes an input / output device 220 and an arithmetic device 210 (see FIG. 15A). The input / output device is electrically connected to the arithmetic device 210. The information processing device 200 can include a housing (see FIG. 15B or FIG. 15C).

  The input / output device 220 includes a display portion 230 and an input portion 240 (see FIG. 15A). The input / output device 220 includes a detection unit 250. In addition, the input / output device 220 can include a communication unit 290.

  The input / output device 220 has a function of supplying image information V1 or control information SS, and a function of supplying position information P1 or detection information S1.

  The arithmetic device 210 has a function of supplying the position information P1 or the detection information S1. The arithmetic device 210 has a function of supplying image information V1. The arithmetic device 210 has a function of operating based on the position information P1 or the detection information S1, for example.

  Note that the housing has a function of housing the input / output device 220 or the arithmetic device 210. Alternatively, the housing has a function of supporting the display unit 230 or the arithmetic device 210.

  The display unit 230 has a function of displaying an image based on the image information V1. The display unit 230 has a function of displaying an image based on the control information SS.

  The input unit 240 has a function of supplying the position information P1.

  The detection unit 250 has a function of supplying the detection information S1. For example, the detection unit 250 has a function of detecting the illuminance of an environment where the information processing apparatus 200 is used, and a function of supplying illuminance information.

  Thereby, the information processing apparatus can operate by grasping the intensity of light received by the casing of the information processing apparatus in an environment where the information processing apparatus is used. Alternatively, the user of the information processing apparatus can select a display method. As a result, a novel information processing apparatus that is highly convenient or reliable can be provided.

  Below, each element which comprises information processing apparatus is demonstrated. Note that these configurations cannot be clearly separated, and one configuration may serve as another configuration or may include a part of another configuration. For example, a touch panel in which a touch sensor is superimposed on a display panel is not only a display unit but also an input unit.

<Configuration example>
The information processing device 200 of one embodiment of the present invention includes a housing or the arithmetic device 210.

  The computing device 210 includes a computing unit 211, a storage unit 212, a transmission path 214, and an input / output interface 215.

  Further, the information processing device of one embodiment of the present invention includes the input / output device 220.

  The input / output device 220 includes a display unit 230, an input unit 240, a detection unit 250, and a communication unit 290.

《Information processing device》
The information processing device of one embodiment of the present invention includes the arithmetic device 210 or the input / output device 220.

<< Calculation device 210 >>
The calculation device 210 includes a calculation unit 211 and a storage unit 212. A transmission path 214 and an input / output interface 215 are provided.

<< Calculation unit 211 >>
The calculation unit 211 has a function of executing a program, for example.

<< Storage unit 212 >>
The storage unit 212 has a function of storing, for example, a program executed by the calculation unit 211, initial information, setting information, or an image.

  Specifically, a hard disk, a flash memory, a memory including a transistor including an oxide semiconductor, or the like can be used.

<< Input / output interface 215, transmission path 214 >>
The input / output interface 215 includes a terminal or a wiring, and has a function of supplying information and receiving information. For example, the transmission line 214 can be electrically connected. Further, the input / output device 220 can be electrically connected.

  The transmission path 214 includes wiring, supplies information, and has a function of being supplied with information. For example, the input / output interface 215 can be electrically connected. Further, it can be electrically connected to the calculation unit 211, the storage unit 212, or the input / output interface 215.

<< Input / output device 220 >>
The input / output device 220 includes a display unit 230, an input unit 240, a detection unit 250, or a communication unit 290. For example, the input / output device described in Embodiment 4 can be used. Thereby, power consumption can be reduced.

<< Display unit 230 >>
The display unit 230 includes a control unit 238, a drive circuit GD, a drive circuit SD, and a display panel 700 (see FIG. 10). For example, the display device described in Embodiment 3 can be used for the display portion 230.

<< Input unit 240 >>
Various human interfaces or the like can be used for the input unit 240 (see FIG. 15).

  For example, a keyboard, mouse, touch sensor, microphone, camera, or the like can be used for the input unit 240. Note that a touch sensor including a region overlapping with the display portion 230 can be used. An input / output device including a touch sensor including a display unit 230 and a region overlapping with the display unit 230 can be referred to as a touch panel or a touch screen.

  For example, the user can make various gestures (tap, drag, swipe, pinch in, etc.) using a finger touching the touch panel as a pointer.

  For example, the computing device 210 may analyze information such as the position or trajectory of a finger that touches the touch panel, and a specific gesture may be supplied when the analysis result satisfies a predetermined condition. Accordingly, the user can supply a predetermined operation command associated with the predetermined gesture in advance using the gesture.

  For example, the user can supply a “scroll command” for changing the display position of the image information using a gesture for moving a finger that touches the touch panel along the touch panel.

<< Detection unit 250 >>
The detection unit 250 has a function of detecting surrounding conditions and supplying detection information. Specifically, illuminance information, posture information, pressure information, position information, and the like can be supplied.

  For example, a light detector, a posture detector, an acceleration sensor, a direction sensor, a GPS (Global positioning System) signal receiving circuit, a pressure sensor, a temperature sensor, a humidity sensor, a camera, or the like can be used for the detection unit 250.

<< Communication unit 290 >>
The communication unit 290 has a function of supplying information to the network and acquiring information from the network.

"program"
The program of one embodiment of the present invention includes the following steps (see FIG. 16A).

[First step]
In the first step, the settings are initialized (see FIGS. 16A and S1).

  For example, predetermined image information to be displayed at startup, a predetermined mode for displaying the image information, and information for specifying a predetermined display method for displaying the image information are acquired from the storage unit 212. Specifically, one still image information or other moving image information can be used as predetermined image information. Further, the first mode or the second mode can be used as a predetermined mode.

[Second step]
In the second step, interrupt processing is permitted (see FIGS. 16A and S2). Note that an arithmetic unit that is permitted to perform interrupt processing can perform interrupt processing in parallel with main processing. The arithmetic unit that has returned to the main process from the interrupt process can reflect the result obtained by the interrupt process to the main process.

  Note that when the counter value is an initial value, the arithmetic unit performs interrupt processing, and when returning from the interrupt processing, the counter may be set to a value other than the initial value. As a result, interrupt processing can always be performed after the program is started.

[Third step]
In the third step, the image information is displayed using the predetermined mode or the predetermined display method selected in the first step or the interruption process (see FIGS. 16A and S3). The predetermined mode specifies a mode for displaying information, and the predetermined display method specifies a method for displaying image information. Further, for example, it can be used as information for displaying the image information V1 or the information V12.

  For example, one method for displaying the image information V1 can be associated with the first mode. Alternatively, another method for displaying the image information V1 can be associated with the second mode. Thereby, a display method can be selected based on the selected mode.

<First mode>
Specifically, a method of supplying a selection signal to one scanning line at a frequency of 30 Hz or more, preferably 60 Hz or more, and displaying based on the selection signal can be associated with the first mode.

  For example, when the selection signal is supplied at a frequency of 30 Hz or higher, preferably 60 Hz or higher, the motion of the moving image can be displayed smoothly.

  For example, when an image is updated at a frequency of 30 Hz or higher, preferably 60 Hz or higher, an image that changes so as to smoothly follow the user's operation can be displayed on the information processing apparatus 200 being operated by the user.

<< Second mode >>
Specifically, a method of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute, and performing display based on the selection signal is described in the second mode. Can be associated with

  When the selection signal is supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute, a display in which flicker or flicker is suppressed can be displayed. In addition, power consumption can be reduced.

  For example, when the information processing apparatus 200 is used for a clock, the display can be updated at a frequency of once per second or a frequency of once per minute.

  By the way, for example, when a light-emitting element is used as a display element, the light-emitting element can emit light in a pulse shape to display image information. Specifically, the organic EL element can emit light in a pulse shape, and the afterglow can be used for display. Since the organic EL element has excellent frequency characteristics, there are cases where the time for driving the light emitting element can be shortened and the power consumption can be reduced. Alternatively, heat generation is suppressed, so that deterioration of the light-emitting element can be reduced in some cases.

[Fourth step]
In the fourth step, if the end command is supplied, the process proceeds to the fifth step, and if the end command is not supplied, the process proceeds to the third step (see FIGS. 16A and 16). ).

  For example, an end command supplied in the interrupt process may be used for determination.

[Fifth step]
In the fifth step, the process ends (see FIGS. 16A and S5).

<Interrupt processing>
The interrupt process includes the following sixth to eighth steps (see FIG. 16B).

[Sixth Step]
In the sixth step, for example, the detection unit 250 is used to detect the illuminance of the environment in which the information processing apparatus 200 is used (see FIGS. 16B and S6). Note that the color temperature or chromaticity of the ambient light may be detected instead of the illuminance of the environment.

[Seventh Step]
In the seventh step, a display method is determined based on the detected illuminance information (see FIGS. 16B and S7). For example, the display brightness is determined not to be too dark or too bright.

  When the color temperature of ambient light or the chromaticity of ambient light is detected in the sixth step, the display color may be adjusted.

[Eighth step]
In the eighth step, the interrupt process is terminated (see FIGS. 16B and S8).

<Configuration example 2 of information processing apparatus>>
Another structure of the information processing device of one embodiment of the present invention is described with reference to FIG.

  FIG. 17A is a flowchart illustrating a program of one embodiment of the present invention. FIG. 17A is a flowchart for explaining interrupt processing different from the interrupt processing shown in FIG.

  The configuration example 3 of the information processing device is different from the interrupt processing described with reference to FIG. 16B in that the interrupt processing includes a step of changing the mode based on the supplied predetermined event. . Here, different portions will be described in detail, and the above description will be applied to portions that can use the same configuration.

<Interrupt processing>
The interrupt process includes the following sixth to eighth steps (see FIG. 17A).

[Sixth Step]
In the sixth step, if a predetermined event is supplied, the process proceeds to the seventh step. If a predetermined event is not supplied, the process proceeds to the eighth step (see FIGS. 17A and U6). ). For example, it can be used as a condition whether or not a predetermined event is supplied during a predetermined period. Specifically, the predetermined period can be a period of 5 seconds or less, 1 second or less, or 0.5 seconds or less, preferably 0.1 seconds or less and longer than 0 seconds.

[Seventh Step]
In the seventh step, the mode is changed (see FIGS. 17A and U7). Specifically, when the first mode is selected, the second mode is selected, and when the second mode is selected, the first mode is selected.

  For example, the display mode can be changed for some areas of the display unit 230. Specifically, the display mode can be changed for a region where the drive circuit GDB of the display unit 230 including the drive circuit GDA, the drive circuit GDB, the drive circuit GDC, and the drive circuit GDD supplies a selection signal (FIG. 17 ( B)).

  For example, when a predetermined event is supplied to the input unit 240 of an area where the drive circuit GDB supplies a selection signal, the display mode of the area can be changed. Specifically, the frequency of the selection signal supplied by the drive circuit GDB can be changed. Thereby, for example, the display of the region where the drive circuit GDB supplies the selection signal can be updated without operating the drive circuit GDA, the drive circuit GDC, and the drive circuit GDD. Alternatively, power consumed by the driver circuit can be suppressed.

[Eighth step]
In the eighth step, the interrupt process is terminated (see FIGS. 17A and U8). Note that interrupt processing may be repeatedly executed during a period in which main processing is being executed.

《Predetermined event》
For example, an event such as “click” or “drag” supplied using a pointing device such as a mouse, an event such as “tap”, “drag” or “swipe” supplied to a touch panel using a finger or the like as a pointer Can be used.

  Further, for example, an argument of a command associated with a predetermined event can be given using the position of the slide bar pointed to by the pointer, the swipe speed, the drag speed, or the like.

  For example, the information detected by the detection unit 250 can be compared with a preset threshold value, and the comparison result can be used as an event.

  Specifically, a pressure-sensitive detector or the like that contacts a button or the like that can be pushed into the housing can be used for the detection unit 250.

《Instructions related to predetermined events》
For example, an end instruction can be associated with a particular event.

  For example, a “page turning command” for switching display from one displayed image information to another image information can be associated with a predetermined event. Note that an argument that determines a page turning speed used when executing the “page turning instruction” can be given using a predetermined event.

  For example, a “scroll command” for moving the display position of a part of one image information displayed to display another part continuous to the part can be associated with a predetermined event. It should be noted that an argument for determining the speed of moving the display used when executing the “scroll command” can be given using a predetermined event.

  For example, a command for setting a display method or a command for generating image information can be associated with a predetermined event. An argument that determines the brightness of the image to be generated can be associated with a predetermined event. Further, an argument for determining the brightness of the image to be generated may be determined based on the brightness of the environment detected by the detection unit 250.

  For example, a command for acquiring information distributed using a push-type service using the communication unit 290 can be associated with a predetermined event.

  In addition, you may determine the presence or absence of the qualification to acquire information using the positional information which the detection part 250 detects. Specifically, it may be determined that the person has a qualification to acquire information when in or in a specific classroom, school, conference room, company, building, or the like. Thus, for example, the teaching material distributed in a classroom such as a school or university can be received and the information processing apparatus 200 can be used as a textbook (see FIG. 15C). Alternatively, a material distributed in a conference room of a company or the like can be received and used as a conference material.

  Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 7)
In this embodiment, a structure of an information processing device of one embodiment of the present invention will be described with reference to FIGS.

  18 and 19 are diagrams illustrating a configuration of an information processing device of one embodiment of the present invention. 18A is a block diagram of the information processing apparatus, and FIGS. 18B to 18E are perspective views illustrating the configuration of the information processing apparatus. 19A to 19E are perspective views illustrating the configuration of the information processing apparatus.

<Information processing device>
An information processing device 5200B described in this embodiment includes an arithmetic device 5210 and an input / output device 5220 (see FIG. 18A).

  The arithmetic device 5210 has a function of supplying operation information and a function of supplying image information based on the operation information.

  The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, a communication unit 5290, a function of supplying operation information, and a function of supplying image information. The input / output device 5220 has a function of supplying detection information, a function of supplying communication information, and a function of supplying communication information.

  The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 supplies operation information based on the operation of the user of the information processing apparatus 5200B.

  Specifically, a keyboard, hardware buttons, a pointing device, a touch sensor, a voice input device, a line-of-sight input device, or the like can be used for the input unit 5240.

  The display unit 5230 has a function of displaying a display panel and image information. For example, the display panel described in Embodiment 1 can be used for the display portion 5230.

  The detection unit 5250 has a function of supplying detection information. For example, it has a function of detecting the surrounding environment where the information processing apparatus is used and supplying it as detection information.

  Specifically, an illuminance sensor, an imaging device, a posture detection device, a pressure sensor, a human sensor, or the like can be used for the detection unit 5250.

  The communication unit 5290 has a function for supplying communication information and a function for supplying communication information. For example, a function of connecting to another electronic device or a communication network by wireless communication or wired communication is provided. Specifically, it has functions such as wireless local area communication, telephone communication, and short-range wireless communication.

<< Configuration Example 1 of Information Processing Apparatus >>
For example, an outer shape along a cylindrical column or the like can be applied to the display portion 5230 (see FIG. 18B). In addition, it has a function of changing the display method according to the illuminance of the usage environment. It also has a function of detecting the presence of a person and changing the display content. Thereby, it can install in the pillar of a building, for example. Alternatively, an advertisement or a guide can be displayed. Alternatively, it can be used for digital signage and the like.

<< Configuration Example 2 of Information Processing Apparatus >>
For example, a function for generating image information based on a locus of a pointer used by the user is provided (see FIG. 18C). Specifically, a display panel having a diagonal line length of 20 inches or more, preferably 40 inches or more, more preferably 55 inches or more can be used. Alternatively, a plurality of display panels can be arranged and used for one display area. Alternatively, a plurality of display panels can be arranged and used for a multi-screen. Thereby, it can use for an electronic blackboard, an electronic bulletin board, an electronic signboard, etc., for example.

<< Configuration Example 3 of Information Processing Apparatus >>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 18D). Thereby, for example, the power consumption of the smart watch can be reduced. Alternatively, for example, an image can be displayed on the smart watch so that the image can be suitably used even in an environment with strong outside light such as outdoors on a sunny day.

<< Configuration Example 4 of Information Processing Apparatus >>
The display portion 5230 includes, for example, a curved surface that bends gently along the side surface of the housing (see FIG. 18E). Alternatively, the display unit 5230 includes a display panel, and the display panel has a function of displaying on the front surface, the side surface, and the upper surface, for example. Thereby, for example, image information can be displayed not only on the front surface of the mobile phone but also on the side surface and the upper surface.

<< Configuration Example 5 of Information Processing Apparatus >>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 19A). Thereby, the power consumption of a smart phone can be reduced. Alternatively, for example, an image can be displayed on a smartphone so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

<< Configuration Example of Information Processing Apparatus 6. >>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 19B). Thereby, an image can be displayed on the television system so that it can be suitably used even when it is exposed to strong external light that is inserted indoors on a sunny day.

<< Configuration Example 7 of Information Processing Apparatus >>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 19C). Thereby, for example, an image can be displayed on a tablet computer so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

<< Configuration Example of Information Processing Apparatus 8. >>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 19D). Thereby, for example, the subject can be displayed on the digital camera so that it can be viewed properly even in an environment with strong external light such as outdoors on a sunny day.

<< Configuration Example 9 of Information Processing Apparatus >>
For example, a function of changing a display method in accordance with the illuminance of the usage environment is provided (see FIG. 19E). Thereby, for example, an image can be displayed on a personal computer so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

  Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

  For example, in this specification and the like, when X and Y are explicitly described as being connected, X and Y are electrically connected, and X and Y are functional. And the case where X and Y are directly connected are disclosed in this specification and the like. Therefore, it is not limited to a predetermined connection relationship, for example, the connection relationship shown in the figure or text, and anything other than the connection relation shown in the figure or text is also described in the figure or text.

  Here, X and Y are assumed to be objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

  As an example of the case where X and Y are directly connected, an element that enables electrical connection between X and Y (for example, a switch, a transistor, a capacitor, an inductor, a resistor, a diode, a display, etc.) Element, light emitting element, load, etc.) are not connected between X and Y, and elements (for example, switches, transistors, capacitive elements, inductors) that enable electrical connection between X and Y X and Y are not connected via a resistor element, a diode, a display element, a light emitting element, a load, or the like.

  As an example of the case where X and Y are electrically connected, an element (for example, a switch, a transistor, a capacitive element, an inductor, a resistance element, a diode, a display, etc.) that enables electrical connection between X and Y is shown. More than one element, light emitting element, load, etc.) can be connected between X and Y. Note that the switch has a function of controlling on / off. That is, the switch is in a conductive state (on state) or a non-conductive state (off state), and has a function of controlling whether or not to pass a current. Alternatively, the switch has a function of selecting and switching a path through which a current flows. Note that the case where X and Y are electrically connected includes the case where X and Y are directly connected.

  As an example of the case where X and Y are functionally connected, a circuit (for example, a logic circuit (an inverter, a NAND circuit, a NOR circuit, etc.) that enables a functional connection between X and Y, signal conversion, etc. Circuit (DA conversion circuit, AD conversion circuit, gamma correction circuit, etc.), potential level conversion circuit (power supply circuit (boost circuit, step-down circuit, etc.), level shifter circuit that changes signal potential level, etc.), voltage source, current source, switching Circuit, amplifier circuit (circuit that can increase signal amplitude or current amount, operational amplifier, differential amplifier circuit, source follower circuit, buffer circuit, etc.), signal generation circuit, memory circuit, control circuit, etc.) One or more can be connected between them. As an example, even if another circuit is interposed between X and Y, if the signal output from X is transmitted to Y, X and Y are functionally connected. To do. Note that the case where X and Y are functionally connected includes the case where X and Y are directly connected and the case where X and Y are electrically connected.

  In addition, when it is explicitly described that X and Y are electrically connected, a case where X and Y are electrically connected (that is, there is a separate connection between X and Y). And X and Y are functionally connected (that is, they are functionally connected with another circuit between X and Y). And the case where X and Y are directly connected (that is, the case where another element or another circuit is not connected between X and Y). It shall be disclosed in the document. In other words, when it is explicitly described that it is electrically connected, the same contents as when it is explicitly described only that it is connected are disclosed in this specification and the like. It is assumed that

  Note that for example, the source (or the first terminal) of the transistor is electrically connected to X through (or not through) Z1, and the drain (or the second terminal or the like) of the transistor is connected to Z2. Through (or without), Y is electrically connected, or the source (or the first terminal, etc.) of the transistor is directly connected to a part of Z1, and another part of Z1 Is directly connected to X, and the drain (or second terminal, etc.) of the transistor is directly connected to a part of Z2, and another part of Z2 is directly connected to Y. Then, it can be expressed as follows.

  For example, “X and Y, and the source (or the first terminal or the like) and the drain (or the second terminal or the like) of the transistor are electrically connected to each other. The drain of the transistor (or the second terminal, etc.) and the Y are electrically connected in this order. ” Or “the source (or the first terminal or the like) of the transistor is electrically connected to X, the drain (or the second terminal or the like) of the transistor is electrically connected to Y, and X or the source ( Or the first terminal or the like, the drain of the transistor (or the second terminal, or the like) and Y are electrically connected in this order. Or “X is electrically connected to Y through the source (or the first terminal) and the drain (or the second terminal) of the transistor, and X is the source of the transistor (or the first terminal). Terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y are provided in this connection order. By using the same expression method as in these examples and defining the order of connection in the circuit configuration, the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor are separated. Apart from that, the technical scope can be determined.

  Alternatively, as another expression method, for example, “a source (or a first terminal or the like of a transistor) is electrically connected to X through at least a first connection path, and the first connection path is The second connection path does not have a second connection path, and the second connection path includes a transistor source (or first terminal or the like) and a transistor drain (or second terminal or the like) through the transistor. The first connection path is a path through Z1, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y through at least the third connection path. The third connection path is connected and does not have the second connection path, and the third connection path is a path through Z2. " Or, “the source (or the first terminal or the like) of the transistor is electrically connected to X via Z1 by at least a first connection path, and the first connection path is a second connection path. The second connection path has a connection path through the transistor, and the drain (or the second terminal, etc.) of the transistor is at least connected to Z2 by the third connection path. , Y, and the third connection path does not have the second connection path. Or “the source of the transistor (or the first terminal or the like) is electrically connected to X through Z1 by at least a first electrical path, and the first electrical path is a second electrical path Does not have an electrical path, and the second electrical path is an electrical path from the source (or first terminal or the like) of the transistor to the drain (or second terminal or the like) of the transistor; The drain (or the second terminal or the like) of the transistor is electrically connected to Y through Z2 by at least a third electrical path, and the third electrical path is a fourth electrical path. The fourth electrical path is an electrical path from the drain (or second terminal or the like) of the transistor to the source (or first terminal or the like) of the transistor. can do. Using the same expression method as those examples, by defining the connection path in the circuit configuration, the source (or the first terminal or the like) of the transistor and the drain (or the second terminal or the like) are distinguished. The technical scope can be determined.

  In addition, these expression methods are examples, and are not limited to these expression methods. Here, it is assumed that X, Y, Z1, and Z2 are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, and the like).

  In addition, even when the components shown in the circuit diagram are electrically connected to each other, even when one component has the functions of a plurality of components. There is also. For example, in the case where a part of the wiring also functions as an electrode, one conductive film has both the functions of the constituent elements of the wiring function and the electrode function. Therefore, the term “electrically connected” in this specification includes in its category such a case where one conductive film has functions of a plurality of components.

C (g) Electrode M (h) Electrode CL (g) Control line ML (h) Signal line DC detection circuit OSC Oscillation circuit P1 Position information SD Drive circuit GD Drive circuit GDA Drive circuit GDB Drive circuit CP Conductive material ANO Conductive film BR (G, h) Conductive film SS Control information ACF1 Conductive material C21 Capacitor element CF Colored film G1 (i) Scan line G2 (i) Scan line S1 Detection information S1 (j) Signal line S2 (j) Signal line SD1 Drive circuit SD2 Drive circuit SW1 Switch SW2 Switch V1 Image information V11 Information V12 Information VCOM2 Conductive film FPC1 Flexible printed circuit board 200 Information processing device 210 Processing device 211 Processing unit 212 Storage unit 214 Transmission path 215 Input / output interface 220 Input / output device 230 Display unit 231 Display area 234 Expansion circuit 235M Image processing circuit 238 Control 240 Input unit 241 Detection region 250 Detection unit 290 Communication unit 501B Insulating film 501C Insulating film 504 Conductive film 504E Conductive film 505 Bonding layer 506 Insulating film 508 Semiconductor film 508A Region 508B Region 508C Region 511B Conductive film 512A Conductive film 512B Conductive film 512C Conductive Film 512D Conductive film 516 Insulating film 518 Insulating film 519B Terminal 520 Functional layer 520T Translucent region 521 Insulating film 522A Connection part 522B Connection part 524 Conductive film 528 Insulating film 530 (i, j) Pixel circuit 550 (i, j) Display Element 551 Electrode 552 Electrode 553 (j) Layer containing light emitting material 570 Substrate 700 Display panel 702 (i, j) Pixel 770 Substrate 770P Functional film 775 (g, h) Sensing element 900 Pixel 900s Light shielding region 900t Light transmission region 900t Transmission region 901 Drive circuit unit 902 Wiring 904 Wiring 906 Wiring 910 Transistor 911 Transistor 912 Transistor 913 Capacitance element 916B Light emitting area 916G Light emitting area 916R Light emitting area 930EL Light emitting element 5200B Information processing apparatus 5210 Arithmetic apparatus 5220 Input / output apparatus 5230 Display section 5240 Input section 5250 Detection section 5290 Communication section

Claims (10)

Have pixels,
The pixel includes a light-transmitting region that transmits visible light and a display element.
The translucent region includes a pixel circuit,
The pixel circuit includes a conductive film,
The conductive film includes a region that transmits the visible light in the translucent region,
The display element is electrically connected to the pixel circuit;
The display device emits white light toward the translucent region. The translucent region includes a colored film,
The display panel according to claim 1, wherein the translucent region has a transmittance of 60% or more with respect to light of any one color of red, green, and blue. The pixel circuit includes a transistor,
The transistor includes a semiconductor film, a first electrode, a second electrode, and a first gate electrode,
The semiconductor film includes a first region electrically connected to the first electrode, and a second region electrically connected to the second electrode,
The semiconductor film includes a region overlapping with the first gate electrode between the first region and the second region,
The first region transmits the visible light;
The display panel according to claim 1, wherein the second region transmits the visible light. The semiconductor film has a band gap of 2.5 eV or more,
The display panel according to claim 1, wherein the conductive film includes a conductive oxide. The pixel includes a first insulating film,
The pixel includes a second insulating film,
The display element includes a region sandwiched between the first insulating film and the second insulating film,
The display element includes a first electrode, a second electrode, and a layer containing a light-emitting material,
The layer containing the light-emitting material includes a region sandwiched between the first electrode and the second electrode,
The display panel according to claim 1, wherein the layer including the light emitting material includes an organic compound. Has a display area,
The display area includes a group of a plurality of pixels, another group of a plurality of pixels, a scanning line and a signal line,
The group of pixels includes the pixels;
The group of pixels is arranged in a row direction,
The other group of the plurality of pixels includes the pixel,
The other group of the plurality of pixels is arranged in a column direction intersecting the row direction,
The scanning line is electrically connected to a group of a plurality of pixels,
The signal line is electrically connected to another group of a plurality of pixels,
The scanning line includes a metal film,
The display panel according to claim 1, wherein the signal line includes a metal film. A display panel according to any one of claims 1 to 6;
A control unit,
The control unit is supplied with image information and control information,
The control unit generates information based on the image information,
The controller supplies the information;
The display panel is supplied with the information,
The display device displays based on the information. An input unit and a display unit;
The display unit includes the display panel according to any one of claims 1 to 6.
The input unit includes a detection area,
The input unit detects an object close to the detection area,
The input / output device, wherein the detection area includes an area overlapping with the pixel. The detection area includes a control line, a detection signal line, and a detection element,
The detection element is electrically connected to the control line and the detection signal line,
The control line provides a control signal;
The detection signal line is supplied with a detection signal,
The detection element supplies the detection signal that changes based on a distance between the control signal and an object that is close to a region overlapping with the pixel,
The sensing element includes a first electrode and a second electrode,
The first electrode includes a light-transmitting region in a region overlapping with the pixel,
The first electrode is electrically connected to the control line;
The second electrode includes a region having translucency in a region overlapping with the pixel,
The second electrode is electrically connected to the detection signal line;
9. The input / output according to claim 8, wherein the second electrode is disposed so as to form an electric field between the second electrode and the first electrode, the electric field being partially blocked by an object close to a region overlapping with the pixel. apparatus.   7. One or more of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, a viewpoint input device, and a posture detection device, and any one of claims 1 to 6. An information processing apparatus including a display panel.

Images