WO2018158651A1

WO2018158651A1 - Display panel, display device, input/output device, and information processing device

Info

Publication number: WO2018158651A1
Application number: PCT/IB2018/051017
Authority: WO
Inventors: 山崎舜平; 高橋圭
Original assignee: 株式会社半導体エネルギー研究所
Priority date: 2017-03-03
Filing date: 2018-02-20
Publication date: 2018-09-07

Abstract

Provided is a novel display panel that is excellent in convenience or reliability. A display panel that has a buffer amplifier and a display area. The buffer amplifier comprises a first transistor and a second transistor. The display area comprises signal lines and pixels. The pixels comprise pixel circuits. The pixel circuits comprise a third transistor. The signal lines are electrically connected to a source electrode or a drain electrode of the first transistor, to a source electrode or a drain electrode of the second transistor, and to a source electrode or a drain electrode of the third transistor. The first transistor comprises a first semiconductor. The second transistor comprises a second semiconductor. The third transistor comprises a third semiconductor. The third semiconductor includes an element that is included in the second semiconductor.

Description

Display panel, display device, input / output device, and information processing device

One embodiment of the present invention relates to a display panel, a display device, an input / output device, or an information processing device.

Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, as a technical field of one embodiment of the present invention disclosed more specifically in this specification, a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof, Can be cited as an example.

Display devices tend to have higher performance such as multi-gradation and higher definition. In order to cope with this high performance, an IC (Integrated Circuit; hereinafter also referred to as a driver IC) is employed for a drive circuit of a display device, particularly a source driver.

The driver IC has a gradation voltage generation circuit for generating an analog signal to be supplied to the pixel. This gradation voltage generation circuit is a so-called D / A conversion circuit that generates an analog signal based on a digital signal.

The D / A converter circuit adopts a so-called R-DAC (Resistor digital-to-analog converter) that uses a resistor provided in series in consideration of the fact that a high response speed is required. In the R-DAC, the number of switches exponentially increases as the number of bits of a digital signal increases, so that the circuit area of the driver IC increases.

For this reason, Patent Documents 1 to 3 propose a configuration in which a desired analog signal is obtained by separately converting a digital signal into upper bits and lower bits and synthesizing respective analog signals.

US Patent Application Publication No. 2005/0140630 US Patent Application Publication No. 2010/0156867 US Patent Application Publication No. 2010/0141493

An object of one embodiment of the present invention is to provide a novel display panel that is highly convenient or reliable. Another object is to provide a novel display device that is highly convenient or reliable. Another object is to provide a novel input / output device that is highly convenient or reliable. Another object is to provide a novel information processing device that is highly convenient or reliable. Another object is to provide a novel display panel, a novel display device, a novel input / output device, a novel information processing device, or a novel semiconductor device.

Note that the description of these problems does not disturb the existence of other problems. Note that one embodiment of the present invention does not have to solve all of these problems. Issues other than these will be apparent from the description of the specification, drawings, claims, etc., and other issues can be extracted from the descriptions of the specification, drawings, claims, etc. It is.

(1) One embodiment of the present invention is a display panel including a buffer amplifier and a display region.

The buffer amplifier includes a first transistor and a second transistor.

The display area includes signal lines and pixels.

The pixel includes a pixel circuit, and the pixel circuit includes a third transistor.

The signal line is electrically connected to one of the source electrode and the drain electrode of the first transistor, the signal line is electrically connected to one of the source electrode and the drain electrode of the second transistor, and the signal line is connected to the third transistor It is electrically connected to one of a source electrode and a drain electrode of the transistor.

The first transistor includes a first semiconductor, the second transistor includes a second semiconductor, and the third transistor includes a third semiconductor.

The third semiconductor includes an element contained in the second semiconductor.

Accordingly, a current for charging the signal line can be supplied using the first transistor. Alternatively, the signal line can be discharged using the second transistor. Alternatively, heat generated when the signal line is charged or discharged from the signal line can be efficiently radiated. Alternatively, an increase in the temperature of the buffer amplifier can be suppressed. Alternatively, in the step of forming the third transistor used for the pixel circuit, the second transistor can be formed. As a result, a novel display panel that is highly convenient or reliable can be provided.

(2) Another embodiment of the present invention is the above display panel in which the first semiconductor includes single crystal silicon and the second semiconductor includes a metal oxide.

Thereby, the drive capability of the first transistor can be increased. Alternatively, the breakdown voltage of the second transistor can be increased. Alternatively, the current flowing through the second transistor can be increased. Alternatively, the second transistor can be kept away from the first transistor. Alternatively, the first transistor and the second transistor serving as heat sources can be separated from each other. Alternatively, heat generated by the second transistor can be radiated to the wiring or the like. Alternatively, an increase in temperature of the single crystal silicon substrate over which the first transistor is formed can be suppressed. As a result, a novel display panel that is highly convenient or reliable can be provided.

(3) One embodiment of the present invention is the above display panel including a semiconductor device.

The semiconductor device includes a digital-analog conversion circuit, the semiconductor device includes a first terminal, a second terminal, and a third terminal, and the semiconductor device includes a first transistor.

The first terminal is electrically connected to the digital / analog conversion circuit.

The second terminal is electrically connected to the source electrode or the drain electrode of the first transistor, and the second terminal is electrically connected to the signal line.

The third terminal is electrically connected to the gate electrode of the second transistor.

Thereby, an analog signal obtained by converting a digital signal into a predetermined voltage can be supplied to one signal line. In the step of forming a transistor used for the digital-analog converter circuit, the first transistor can be formed. As a result, a novel display panel that is highly convenient or reliable can be provided.

(4) One embodiment of the present invention is a display panel including a display region and a digital-analog conversion circuit.

The display region includes a pixel and a signal line, the pixel includes a pixel circuit, and the pixel circuit includes a third transistor. The signal line is electrically connected to one of the source electrode and the drain electrode of the third transistor.

The third transistor includes a third semiconductor, and the third semiconductor includes a metal oxide.

The digital-analog conversion circuit is supplied with a parallel signal, and the digital-analog conversion circuit supplies an analog signal. The digital-analog conversion circuit includes a pass transistor / logic circuit and a resistor string.

The resistor string is electrically connected to the pass transistor logic circuit, and the pass transistor logic circuit includes a fourth transistor. The signal line is electrically connected to one of the source electrode and the drain electrode of the fourth transistor.

The fourth transistor includes a fourth semiconductor, and the fourth semiconductor includes an element contained in the third semiconductor.

Accordingly, an analog signal obtained by converting a digital signal into a predetermined voltage can be supplied to a pixel electrically connected to the signal line. Alternatively, a transistor having the same semiconductor as that of a pixel transistor can be used for the pass transistor / logic circuit of the digital-analog converter circuit. Alternatively, part of the process for manufacturing the pixel circuit can be combined with part of the process for manufacturing the pass transistor / logic circuit. As a result, a novel display panel that is highly convenient or reliable can be provided.

(5) One embodiment of the present invention is the above display panel including a shift register and a latch circuit.

The latch circuit is electrically connected to the shift register.

The pass transistor logic circuit is electrically connected to the latch circuit.

The shift register includes only n-type transistors, and the latch circuit includes only n-type transistors.

Thus, a digital-analog conversion circuit and a pixel circuit can be configured using only n-type transistors. Alternatively, a transistor including the same semiconductor as a semiconductor included in a pixel transistor can be used for the digital-analog conversion circuit. Alternatively, part of the process for manufacturing the pixel circuit can be combined with part of the process for manufacturing the pass transistor / logic circuit. Alternatively, the manufacturing process of the digital-analog converter circuit can be simplified. As a result, a novel display panel that is highly convenient or reliable can be provided.

(6) One embodiment of the present invention is the above display panel in which a display region includes a group of a plurality of pixels, another group of a plurality of pixels, and a scan line.

The group of the plurality of pixels is arranged in the row direction, and the group of the plurality of pixels includes the pixel.

Another group of the plurality of pixels is arranged in the column direction intersecting the row direction.

The scan line is electrically connected to a group of a plurality of pixels.

The signal line is electrically connected to another group of a plurality of pixels.

Thus, an analog signal obtained by converting a digital signal into a predetermined voltage can be supplied to the other group of pixels. As a result, a novel display panel that is highly convenient or reliable can be provided.

(7) One embodiment of the present invention is the above display panel in which the display region includes a plurality of pixels in a matrix.

The display area includes 7600 or more pixels in the row direction, and the display area includes 4300 or more pixels in the column direction.

Thereby, for example, an image signal in which deterioration is suppressed can be supplied to pixels having a larger number than a high-vision image or a 4K image. Alternatively, the image signal can be supplied to the pixels at high speed while suppressing the deterioration of the image signal. Alternatively, a high-definition image can be displayed. Alternatively, display can be performed at a refresh rate of 60 Hz or higher, preferably 120 Hz or higher. As a result, a novel display panel that is highly convenient or reliable can be provided.

(8) One embodiment of the present invention is the above display panel in which a display region includes a first pixel, a second pixel, and a third pixel.

The first pixel displays a color having a chromaticity x in the CIE 1931 chromaticity coordinates of greater than 0.680 and less than or equal to 0.720, and a chromaticity y of 0.260 or more and 0.320 or less.

The second pixel displays a color having a chromaticity x in the CIE 1931 chromaticity coordinates of 0.130 or more and 0.250 or less and a chromaticity y of greater than 0.710 and 0.810 or less.

The third pixel displays a color having a chromaticity x in the CIE 1931 chromaticity coordinates of 0.120 or more and 0.170 or less and a chromaticity y of 0.020 or more and less than 0.060.

(9) One embodiment of the present invention is a display device including the display panel and a control unit.

The control unit is supplied with image information and control information, the control unit generates information based on the image information, and the control unit supplies the information.

The information includes gradations of 12 bits or more.

The display panel is supplied with information.

The scanning line is supplied with a selection signal at a frequency of 60 Hz or more.

The display element displays based on the information.

Thereby, image information can be displayed using a display element. As a result, a novel display device that is highly convenient or reliable can be provided.

(10) One embodiment of the present invention is an input / output device including an input portion and a display portion.

The display unit includes the display panel.

The input unit includes a detection region, and the input unit detects an object close to the detection region. The detection area includes an area that overlaps with the pixel.

Accordingly, it is possible to detect an object that is close to a region overlapping with the display unit while displaying image information using the display unit. Alternatively, position information can be input using a finger or the like that is brought close to the display portion as a pointer. Alternatively, the position information can be associated with image information displayed on the display unit. As a result, a novel input / output device that is highly convenient or reliable can be provided.

(11) One embodiment of the present invention includes one or more of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, a line-of-sight input device, and a posture detection device, And an information processing apparatus including a display panel.

Thereby, based on the information supplied using various input devices, image information or control information can be generated by the arithmetic device. As a result, a novel information processing apparatus that is highly convenient or reliable can be provided.

In the drawings attached to the present specification, the components are classified by function, and the block diagram is shown as an independent block. However, it is difficult to completely separate the actual components for each function. May involve multiple functions.

In this specification, the terms “source” and “drain” of a transistor interchange with each other depending on the polarity of the transistor or the level of potential applied to each terminal. In general, in an n-channel transistor, a terminal to which a low potential is applied is called a source, and a terminal to which a high potential is applied is called a drain. In a p-channel transistor, a terminal to which a low potential is applied is called a drain, and a terminal to which a high potential is applied is called a source. In this specification, for the sake of convenience, the connection relationship between transistors may be described on the assumption that the source and the drain are fixed. However, the names of the source and the drain are actually switched according to the above-described potential relationship. .

In this specification, the source of a transistor means a source region that is part of a semiconductor film functioning as an active layer or a source electrode connected to the semiconductor film. Similarly, a drain of a transistor means a drain region that is part of the semiconductor film or a drain electrode connected to the semiconductor film. The gate means a gate electrode.

In this specification, the state where the transistors are connected in series means, for example, a state where only one of the source and the drain of the first transistor is connected to only one of the source and the drain of the second transistor. To do. In addition, the state where the transistors are connected in parallel means that one of the source and the drain of the first transistor is connected to one of the source and the drain of the second transistor, and the other of the source and the drain of the first transistor is connected. It means a state of being connected to the other of the source and the drain of the second transistor.

In this specification, the connection means an electrical connection, and corresponds to a state where current, voltage, or potential can be supplied or transmitted. Therefore, the connected state does not necessarily indicate a directly connected state, and a wiring, a resistor, a diode, a transistor, or the like is provided so that current, voltage, or potential can be supplied or transmitted. The state of being indirectly connected through a circuit element is also included in the category.

In this specification, even when independent components on the circuit diagram are connected to each other, in practice, for example, when a part of the wiring functions as an electrode, In some cases, it also has the functions of the components. In this specification, the term “connection” includes a case where one conductive film has functions of a plurality of components.

In this specification, one of a first electrode and a second electrode of a transistor refers to a source electrode, and the other refers to a drain electrode.

According to one embodiment of the present invention, a novel display panel that is highly convenient or reliable can be provided. Alternatively, a novel display device that is highly convenient or reliable can be provided. Alternatively, a novel input / output device that is highly convenient or reliable can be provided. Alternatively, a novel information processing device that is highly convenient or reliable can be provided. Alternatively, a novel display panel, a novel display device, a novel input / output device, a novel information processing device, or a novel semiconductor device can be provided.

Note that the description of these effects does not disturb the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. It should be noted that the effects other than these are naturally obvious from the description of the specification, drawings, claims, etc., and it is possible to extract the other effects from the descriptions of the specification, drawings, claims, etc. It is.

FIG. 6 is a block diagram illustrating a structure of a display panel according to Embodiment. 4A and 4B illustrate a structure of a display panel according to Embodiment. FIG. 6 is a circuit diagram illustrating a structure of a buffer amplifier that can be used for the display panel according to Embodiment; FIG. 6 is a top view illustrating a structure of a display panel according to Embodiment. FIG. 6 is a block diagram illustrating a structure of a display panel according to Embodiment. 10A and 10B are a cross-sectional view and a circuit diagram illustrating a structure of a display panel according to an embodiment. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. 10A and 10B are a cross-sectional view and a circuit diagram illustrating a structure of a display panel according to an embodiment. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. 4A and 4B illustrate a display device according to an embodiment. FIG. 3 is a block diagram illustrating a structure of an input / output device according to an embodiment. FIG. 2 is a block diagram and a projection view illustrating a configuration of an information processing device according to an embodiment. FIG. 6 is a flowchart illustrating a method for driving the information processing apparatus according to the embodiment. 6A and 6B are a flowchart and a timing chart illustrating a method for driving an information processing apparatus according to an embodiment. 2A and 2B illustrate a structure of an information processing device according to an embodiment. 2A and 2B illustrate a structure of an information processing device according to an embodiment. FIG. 6 is a block diagram illustrating a structure of a display panel according to Embodiment. 4A and 4B are a block diagram and a circuit diagram illustrating a structure of a display panel according to Embodiment;

One embodiment of the present invention is a display panel including a buffer amplifier and a display region. The buffer amplifier includes a first transistor and a second transistor, and the display region includes a signal line and a pixel. The pixel includes a pixel circuit, and the pixel circuit includes a third transistor. In addition, the signal line is electrically connected to the source electrode or the drain electrode of the first transistor, is electrically connected to the source electrode or the drain electrode of the second transistor, and is connected to the source electrode or the drain electrode of the third transistor. Electrically connected. The first transistor includes a first semiconductor, the second transistor includes a second semiconductor, the third transistor includes a third semiconductor, and the third semiconductor includes a second semiconductor. Contains elements contained in semiconductors.

Accordingly, a current for charging the signal line can be supplied using the first transistor. Alternatively, the signal line can be discharged using the second transistor. Alternatively, the signal line can be charged or discharged from the signal line. Alternatively, an increase in the temperature of the buffer amplifier can be suppressed. Alternatively, in the step of forming the third transistor used for the pixel circuit, the second transistor can be formed. As a result, a novel display panel that is highly convenient or reliable can be provided.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
In this embodiment, the structure of the display panel of one embodiment of the present invention will be described with reference to FIGS.

FIG. 1 illustrates a structure of a display panel of one embodiment of the present invention.

FIG. 2 illustrates a structure of a display panel of one embodiment of the present invention.

In the present specification, a variable having an integer value of 1 or more may be used for the sign. For example, (p) including a variable p that takes an integer value of 1 or more may be used as a part of a code that identifies any of the maximum p components. Further, for example, a variable m that takes an integer value of 1 or more and (m, n) including a variable n may be used as part of a code that identifies any of the maximum m × n components.

<Configuration Example of Display Panel 1. >
A display panel 700 described in this embodiment includes a buffer amplifier BA and a display region 231 (see FIG. 1).

<< Configuration Example of Buffer Amplifier BA >>
The buffer amplifier BA includes a transistor Tr1 and a transistor Tr2 (see FIG. 2). For example, the circuit 11 and the circuit 12 can be used for the buffer amplifier BA.

Specifically, a CMOS circuit including the transistor Tr1 and the transistor Tr2 can be used for the circuit 12. For example, a differential amplifier circuit can be used for the circuit 11. Specifically, the circuit illustrated in FIG. 3 can be used for the circuit 11. Note that wirings for supplying a predetermined bias voltage can be used for the wirings VB1 to VB6.

<< Configuration Example 1 of Display Area 231 >>
The display area 231 includes a signal line S1 (j) and a pixel 702 (i, j) (see FIG. 1).

The pixel 702 (i, j) includes a pixel circuit 530 (i, j), and the pixel circuit 530 (i, j) includes a transistor Tr3 (see FIG. 2).

<< Configuration Example of Signal Line S1 (j) >>
The signal line S1 (j) is electrically connected to one of the source electrode and the drain electrode of the transistor Tr1. The signal line S1 (j) is electrically connected to one of the source electrode and the drain electrode of the transistor Tr2. The wiring Vdd is electrically connected to the other of the source electrode and the drain electrode of the transistor Tr1. The wiring Vss is electrically connected to the other of the source electrode and the drain electrode of the transistor Tr2. Note that the wiring Vdd has a function of supplying a higher potential than the potential supplied by the wiring Vss.

The signal line S1 (j) is electrically connected to one of the source electrode and the drain electrode of the transistor Tr3.

<< Configuration Example 1 of Transistor >>
The transistor Tr1 includes a first semiconductor, the transistor Tr2 includes a second semiconductor, and the transistor Tr3 includes a third semiconductor.

The third semiconductor includes an element contained in the second semiconductor. For example, a semiconductor formed over a substrate over which the second semiconductor is formed can be used for the third semiconductor. Alternatively, a semiconductor that can be formed in the step of forming the second semiconductor can be used for the third semiconductor.

<< Configuration Example 2 of Transistor >>
In addition, the first semiconductor described in this embodiment includes single crystal silicon, and the second semiconductor includes a metal oxide. For example, a single crystal silicon substrate can be used for the first semiconductor. Alternatively, a semiconductor film formed over an insulating substrate can be used for the second semiconductor. Specifically, an insulating material containing glass or resin can be used for the insulating substrate.

<Configuration Example of Display Panel 2. >
A display panel 700 described in this embodiment includes a driver circuit SD (1) (see FIG. 1).

<< Drive circuit SD (1) >>
The drive circuit SD (1) has a function of supplying an image signal based on the information V11.

The driver circuit SD (1) has a function of generating an image signal and a function of supplying the image signal to a pixel circuit that is electrically connected to one display element.

For example, a digital operation unit (Digital Block) can be used for the drive circuit SD (1). The digital arithmetic unit has a function of converting serial data into parallel data, for example. Specifically, various sequential circuits such as a shift register can be used for the digital arithmetic unit.

For example, an integrated circuit formed over a silicon substrate can be used for the drive circuit SD (1).

Specifically, the following semiconductor device can be used for the drive circuit SD (1).

<< Configuration Example 1 of Semiconductor Device >>
The semiconductor device includes a digital-analog conversion circuit DAC (1) (see FIG. 1). The semiconductor device includes a first terminal Tm11, a second terminal Tm12, and a third terminal Tm13. The semiconductor device includes a transistor Tr1 (see FIG. 2).

The first terminal Tm11 is electrically connected to the digital / analog conversion circuit DAC (1) (see FIG. 1).

The second terminal Tm12 is electrically connected to the source electrode or the drain electrode of the transistor Tr1, and the second terminal Tm12 is electrically connected to the signal line S1 (j) (see FIG. 2).

The third terminal Tm13 is electrically connected to the gate electrode of the transistor Tr2.

For example, the semiconductor device can be electrically connected to the signal line S1 (j) by using a COG (Chip on glass) method or a COF (Chip on Film) method. Specifically, the semiconductor device can be electrically connected to the signal line S1 (j) using an anisotropic conductive film.

<< Drive circuit GD >>
The drive circuit GD has a function of supplying a selection signal based on the control information.

For example, a function of supplying a selection signal to one scanning line at a frequency of 30 Hz or higher, preferably 60 Hz or higher is provided based on the control information. Thereby, a moving image can be displayed smoothly.

For example, a function of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute based on the control information is provided. Thereby, a still image can be displayed in a state where flicker is suppressed.

By the way, the frame frequency can be made variable. Alternatively, for example, display can be performed at a frame frequency of 1 Hz to 120 Hz. Alternatively, display can be performed at a frame frequency of 120 Hz using a progressive method. Alternatively, Recommendation ITU-R BT. An extremely high-resolution display that satisfies 2020-2 can be performed. Alternatively, extremely high resolution display can be performed.

<< Configuration Example of Display Area 231 >>
The display region 231 includes a group of a plurality of pixels 702 (i, 1) to 702 (i, n), another group of a plurality of pixels 702 (1, j) to pixels 702 (m, j), and a scanning line G1. (I) is provided (see FIG. 1).

A group of the plurality of pixels 702 (i, 1) to 702 (i, n) is arranged in a row direction (a direction indicated by an arrow R1 in the drawing). A group of the plurality of pixels 702 (i, 1) to 702 (i, n) includes the pixel 702 (i, j).

Another group of the plurality of pixels 702 (1, j) to 702 (m, j) is arranged in a column direction (direction indicated by an arrow C1 in the drawing) intersecting the row direction.

The scan line G1 (i) is electrically connected to a group of the plurality of pixels 702 (i, 1) to 702 (i, n).

The signal line S1 (j) is electrically connected to the other group of the plurality of pixels 702 (1, j) to 702 (m, j).

<< Configuration Example of Display Area 231 3. >>
The display area 231 includes a plurality of pixels in a matrix. For example, the display area 231 includes 7600 or more pixels in the row direction and 4300 or more pixels in the column direction. For example, 7680 pixels are provided in the row direction, and 4320 pixels are provided in the column direction.

<Configuration Example of Display Panel 3. >
A display panel 700 described in this embodiment includes a plurality of pixels. The plurality of pixels have a function of displaying colors having different hues. Alternatively, by using the plurality of pixels, hue colors that cannot be displayed by the pixels can be displayed by additive color mixing.

<< Configuration Example of Display Area 231 4. >>
The display region 231 includes a pixel 702 (i, j), a pixel 702 (i, j + 1), and a pixel 702 (i, j + 2) (see FIGS. 4A and 4C).

The pixel 702 (i, j) displays a color having a chromaticity x in the CIE 1931 chromaticity coordinates of greater than 0.680 and less than or equal to 0.720, and a chromaticity y of 0.260 to 0.320.

The pixel 702 (i, j + 1) displays a color having a chromaticity x in the CIE 1931 chromaticity coordinates of 0.130 or more and 0.250 or less, and a chromaticity y of greater than 0.710 and 0.810 or less.

The pixel 702 (i, j + 2) displays a color having a chromaticity x of 0.120 to 0.170 and a chromaticity y of 0.020 to less than 0.060 in the CIE 1931 chromaticity coordinates.

Note that in the case where a plurality of pixels that can display colors having different hues are used for color mixing, each pixel can be referred to as a sub-pixel. In addition, a plurality of sub-pixels can be referred to as a pixel.

For example, the pixel 702 (i, j), the pixel 702 (i, j + 1), or the pixel 702 (i, j + 2) can be rephrased as a sub-pixel, and the pixel 702 (i, j), the pixel 702 (i, j + 1), and The pixel 702 (i, j + 2) can be referred to as a pixel 703 (i, k) as a set (see FIG. 4C).

Specifically, a set of a subpixel that displays blue, a subpixel that displays green, and a subpixel that displays red can be used for the pixel 703 (i, k). Further, a sub-pixel for displaying cyan, a sub-pixel for displaying magenta, and a sub-pixel for displaying yellow can be used as a set for the pixel 703 (i, k).

Further, for example, a sub-pixel for displaying white can be used for the pixel in addition to the above set.

In addition, the pixel 702 (i, j), the pixel 702 (i, j + 1), and the pixel 702 (i, j + 2) are represented by BT. In the CIE chromaticity diagram (x, y). The area ratio to the 2020 color gamut is 80% or more, or the coverage ratio to the color gamut is 75% or more. Preferably, the area ratio is 90% or more, or the coverage is 85% or more.

<Configuration Example of Display Panel 4. >
In addition, the display panel can include a plurality of driver circuits. For example, the display panel 700 includes a drive circuit GDA and a drive circuit GDB (see FIG. 5). In addition, a digital operation unit (Digital Block) can be used for the drive circuit SD (1).

For example, when a plurality of drive circuits are provided, the frequency with which the drive circuit GDA supplies the selection signal and the frequency with which the drive circuit GDB supplies the selection signal can be made different. Specifically, the selection signal can be supplied to another region displaying the moving image at a frequency higher than the frequency of supplying the selection signal to one region displaying the still image. Thereby, a still image can be displayed in a state where flicker is suppressed in one area, and a moving image can be displayed smoothly in another area.

<Configuration Example of Display Panel 5. >
The structure of the display panel 700 described in this embodiment will be described with reference to FIGS.

4A is a top view illustrating a structure of a display panel of one embodiment of the present invention, and FIG. 4B is a top view illustrating part of FIG. 4A. FIG. ) Is a top view illustrating another part.

6A is a cross-sectional view taken along cutting lines X1-X2, X3-X4, and X9-X10 in FIG. 4A, and FIG. 6B is a circuit diagram illustrating a pixel circuit. is there.

FIG. 7 is a cross-sectional view illustrating the structure of a display panel of one embodiment of the present invention. FIG. 7A is a cross-sectional view illustrating a structure of a pixel, and FIG. 7B is a cross-sectional view illustrating a part of FIG. FIG. 7C is a cross-sectional view illustrating a structure of a transistor that can be used in the buffer amplifier BA illustrated in FIG.

The display panel 700 includes a driver circuit SD (1), a driver circuit GD, and a terminal 519B (see FIG. 4A).

The display panel 700 includes a substrate 510, a substrate 770, a functional layer 520, and an insulating film 501C (see FIG. 7A). The display panel 700 includes a functional layer 720, a functional film 770P, and a functional film 770D. The display panel 700 includes a buffer amplifier BA (see FIG. 2). The buffer amplifier BA includes a transistor Tr2 over the insulating film 501C (see FIG. 7C).

The insulating film 501C includes a region sandwiched between the substrate 510 and the substrate 770, and the functional layer 520 includes a region sandwiched between the insulating film 501C and the substrate 770.

<< Pixel Configuration Example 1. >>
The pixel 702 (i, j) includes a functional layer 520 and a display element 750 (i, j) (see FIG. 6A).

<< Configuration Example 1 of Functional Layer 520 >>
The functional layer 520 includes a pixel circuit 530 (i, j), an insulating film 521A, and an insulating film 521B (see FIGS. 6A and 7A).

<< Configuration Example 1 of Pixel Circuit 530 (i, j) >>
For example, a switch, a transistor, a diode, a resistor, an inductor, a capacitor, or the like can be used for the pixel circuit 530 (i, j).

The pixel circuit 530 (i, j) has a function of driving the display element 750 (i, j). For example, the pixel circuit illustrated in FIG. 6B has a function of driving a liquid crystal display element.

Pixel circuit 530 (i, j) includes a switch SW1 and a capacitor C11.

For example, a transistor can be used for the switch SW1 (see FIGS. 6B, 7A, and 7B).

<Transistor>
The transistor includes a semiconductor film 508, a conductive film 504, a conductive film 512A, and a conductive film 512B (see FIG. 7B).

The semiconductor film 508 includes a region 508A electrically connected to the conductive film 512A and a region 508B electrically connected to the conductive film 512B. The semiconductor film 508 includes a region 508C between the region 508A and the region 508B.

The conductive film 504 includes a region overlapping with the region 508C, and the conductive film 504 functions as a gate electrode.

The insulating film 506 includes a region sandwiched between the semiconductor film 508 and the conductive film 504. The insulating film 506 has a function of a gate insulating film.

The conductive film 512A has one of the function of the source electrode and the function of the drain electrode, and the conductive film 512B has the other of the function of the source electrode and the function of the drain electrode.

Note that, for example, a semiconductor film that can be formed in the same step can be used for a driver circuit and a transistor of a pixel circuit.

For example, a bottom-gate transistor, a top-gate transistor, or the like can be used for a driver circuit transistor, a buffer amplifier BA transistor, or a pixel circuit transistor. Specifically, a transistor of a type included in the transistor Tr3 included in the pixel circuit 530 (i, j) can be used as the transistor Tr2.

<< Semiconductor film 508 >>
For example, a semiconductor containing a Group 14 element can be used for the semiconductor film 508. Specifically, a semiconductor containing silicon can be used for the semiconductor film 508. For example, single crystal silicon, polysilicon, microcrystalline silicon, amorphous silicon, or the like can be used for the semiconductor film.

Note that the temperature required for manufacturing a transistor using polysilicon as a semiconductor is lower than that of a transistor using single crystal silicon as a semiconductor.

In addition, the field effect mobility of a transistor using polysilicon as a semiconductor is higher than that of a transistor using amorphous silicon as a semiconductor. Thereby, the aperture ratio of the pixel can be improved. In addition, a pixel provided with extremely high definition, a gate driver circuit, and a source driver circuit can be formed over the same substrate. As a result, the number of parts constituting the electronic device can be reduced.

Further, the reliability of a transistor using polysilicon as a semiconductor is superior to a transistor using amorphous silicon as a semiconductor.

In addition, a transistor using a compound semiconductor can be used. Specifically, a semiconductor containing gallium arsenide can be used for the semiconductor film.

In addition, a transistor using an organic semiconductor can be used. Specifically, an organic semiconductor containing polyacenes or graphene can be used for the semiconductor film.

For example, a transistor including an oxide semiconductor can be used. Specifically, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used for the semiconductor film.

As an example, a transistor whose leakage current in an off state is smaller than that of a transistor using amorphous silicon as a semiconductor film can be used. Specifically, a transistor in which an oxide semiconductor is used for a semiconductor film can be used.

Accordingly, as compared with a pixel circuit using a transistor using amorphous silicon as a semiconductor film, the time during which the pixel circuit can hold an image signal can be lengthened. Specifically, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute while suppressing the occurrence of flicker. As a result, fatigue accumulated in the user of the information processing apparatus can be reduced. In addition, power consumption associated with driving can be reduced.

For example, a 25-nm-thick film containing indium, gallium, and zinc can be used for the semiconductor film 508.

For example, a conductive film in which a 10-nm-thick film containing tantalum and nitrogen and a 300-nm-thick film containing copper are stacked can be used for the conductive film 504. Note that the film containing copper includes a region between which the film containing tantalum and nitrogen is sandwiched between the film containing copper.

For example, a stacked film in which a 400-nm-thick film containing silicon and nitrogen and a 200-nm-thick film containing silicon, oxygen, and nitrogen are stacked can be used for the insulating film 506. Note that the film containing silicon and nitrogen includes a region between the semiconductor film 508 and the film containing silicon, oxygen, and nitrogen.

For example, a conductive film in which a 50-nm-thick film containing tungsten, a 400-nm-thick film containing aluminum, and a 100-nm-thick film containing titanium are stacked in this order as the conductive film 512A or the conductive film 512B. Can be used. Note that the film containing tungsten includes a region in contact with the semiconductor film 508.

By the way, for example, a bottom-gate transistor production line using amorphous silicon as a semiconductor can be easily modified to a bottom-gate transistor production line using an oxide semiconductor as a semiconductor. For example, a top gate transistor production line using polysilicon as a semiconductor can be easily modified to a top gate transistor production line using an oxide semiconductor as a semiconductor. Both modifications can make effective use of existing production lines.

<< Configuration Example of Display Element 750 (i, j) >>
The display element 750 (i, j) includes a region overlapping with the functional layer 520 (see FIGS. 6A and 7A). In addition, the display element 750 (i, j) is electrically connected to the pixel circuit 530 (i, j).

For example, a display element having a function of controlling reflection or transmission of light can be used for the display element 750 (i, j). Specifically, a configuration in which a liquid crystal element and a polarizing plate are combined, a shutter-type MEMS display element, an optical interference-type MEMS display element, or the like can be used.

For example, a display element using a reflective liquid crystal display element, a microcapsule method, an electrophoresis method, an electrowetting method, or the like can be used for the display element 750 (i, j). By using a reflective display element, power consumption of the display panel can be suppressed.

For example, a transmissive liquid crystal display element can be used for the display element 750 (i, j). Further, the display panel 700 has a function of displaying an image by controlling transmission of light emitted from the backlight BL.

For example, IPS (In-Plane-Switching) mode, TN (Twisted Nematic) mode, FFS (Fringe Field Switched) mode, ASM (Axially Symmetrically Applied Micro-cell) mode, OCB (OpticBridge) mode. A liquid crystal element that can be driven using a driving method such as a Crystal) mode or an AFLC (Antiferroelectric Liquid Crystal) mode can be used.

In addition, for example, vertical alignment (VA) mode, specifically, MVA (Multi-Domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment) mode, ECB (Electrically Controlled Birefringence ACP mode, CPB mode) A liquid crystal element that can be driven by a driving method such as an (Advanced Super-View) mode can be used.

The display element 750 (i, j) includes an electrode 751 (i, j), an electrode 752, and a layer 753 containing a liquid crystal material.

The electrode 751 (i, j) is electrically connected to the pixel circuit 530 (i, j) at the connection portion 591A.

The electrode 752 is disposed so as to form an electric field for controlling the alignment of the liquid crystal material between the electrode 751 (i, j).

The display element 750 (i, j) includes an alignment film AF1 and an alignment film AF2.

The layer 753 containing a liquid crystal material includes a region sandwiched between the alignment film AF1 and the alignment film AF2.

For example, a liquid crystal material having a specific resistivity of 1.0 × 10 ¹³ Ω · cm or more, preferably 1.0 × 10 ¹⁴ Ω · cm or more, more preferably 1.0 × 10 ¹⁵ Ω · cm or more is used as the liquid crystal material. The layer 753 containing can be used. Thereby, the fluctuation | variation of the transmittance | permeability of the display element 750 (i, j) can be suppressed. Alternatively, flickering of the display element 750 (i, j) can be suppressed. Alternatively, the frequency of rewriting the display element 750 (i, j) can be reduced.

<< Structure KB1 >>
The structure KB1 has a function of providing a predetermined gap between the functional layer 520 and the substrate 770.

<< Functional layer 720 >>
The functional layer 720 includes a coloring film CF1, an insulating film 771, and a light shielding film BM.

The colored film CF1 includes a region sandwiched between the substrate 770 and the display element 750 (i, j).

The light shielding film BM includes an opening in a region overlapping with the pixel 702 (i, j).

The insulating film 771 includes a region sandwiched between the colored film CF1 and the layer 753 containing a liquid crystal material or a region sandwiched between the light shielding film BM and the layer 753 containing a liquid crystal material. Thereby, the unevenness | corrugation based on the thickness of colored film CF1 can be made flat. Alternatively, impurity diffusion from the light-blocking film BM, the coloring film CF1, or the like to the layer 753 containing a liquid crystal material can be suppressed.

<< Functional film 770P, Functional film 770D, etc. >>
The functional film 770P includes a region overlapping with the display element 750 (i, j). The functional film 770D includes a region overlapping with the display element 750 (i, j).

For example, an antireflection film, a polarizing film, a retardation film, a light diffusion film, a light collecting film, or the like can be used for the functional film 770P or the functional film 770D.

Specifically, a circularly polarizing film can be used for the functional film 770P. In addition, a light diffusion film can be used for the functional film 770D.

In addition, antistatic film that suppresses adhesion of dust, water-repellent film that makes it difficult to adhere dirt, antireflection film (anti-reflection film), non-glossy film (anti-glare film), and scratches caused by use A hard coat film or the like that suppresses the above can be used for the functional film 770P.

<Configuration Example of Display Panel 6. >
The structure of the display panel 700 described in this embodiment will be described with reference to FIGS.

8A is a cross-sectional view taken along cutting lines X1-X2, X3-X4, and X9-X10 in FIG. 4A, and FIG. 8B is a circuit diagram illustrating a pixel circuit. is there.

FIG. 9 is a cross-sectional view illustrating a structure of a display panel of one embodiment of the present invention. FIG. 9A is a cross-sectional view illustrating a structure of a pixel, and FIG. 9B is a cross-sectional view illustrating part of FIG. 9A. FIG. 9C is a cross-sectional view illustrating a structure of a transistor that can be used in the buffer amplifier BA illustrated in FIG.

The display panel 700 includes a substrate 510, a substrate 770, a functional layer 520, and an insulating film 501C (see FIGS. 9A and 9B). In addition, the display panel 700 can include a functional film 770P. The display panel 700 includes a buffer amplifier BA (see FIG. 2). The buffer amplifier BA includes a transistor Tr2 over the insulating film 501C (see FIG. 9C).

<< Pixel Configuration Example 2. >>
The pixel 702 (i, j) includes a functional layer 520 and a display element 550 (i, j) (see FIG. 8A).

<< Configuration Example 2 of Functional Layer 520 >>
The functional layer 520 includes a pixel circuit 530 (i, j), an insulating film 521, an insulating film 528, and a coloring film CF1 (see FIGS. 8A and 9A).

<< Configuration Example of Pixel Circuit 530 (i, j) 2. >>
For example, a switch, a transistor, a diode, a resistor, an inductor, a capacitor, or the like can be used for the pixel circuit 530 (i, j).

The pixel circuit 530 (i, j) has a function of driving the display element 550 (i, j). For example, an organic electroluminescent element can be driven using the pixel circuit illustrated in FIG.

The pixel circuit 530 (i, j) includes a transistor M and a capacitor C12 (see FIGS. 8B, 9A, and 9B).

<< Transistor M >>
The transistor M includes a semiconductor film 508, a conductive film 504, a conductive film 512A, and a conductive film 512B (see FIG. 9B). In addition, a transistor including the conductive film 524 can be used for the pixel circuit 530 (i, j).

The conductive film 524 includes a region in which the semiconductor film 508 is sandwiched between the conductive film 504 and the conductive film 504. Note that the insulating film 516 includes a region sandwiched between the conductive film 524 and the semiconductor film 508. For example, the conductive film 524 can be electrically connected to a wiring that supplies the same potential as the conductive film 504.

<< Configuration Example of Display Element 550 (i, j) >>
The display element 550 (i, j) includes a region overlapping with the functional layer 520 (see FIGS. 8A and 9A). The display element 550 (i, j) is electrically connected to the pixel circuit 530 (i, j).

For example, a display element having a function of emitting light can be used for the display element 550 (i, j) (see FIG. 8A). Specifically, an organic electroluminescent element, an inorganic electroluminescent element, or a light-emitting diode can be used for the display element 550 (i, j).

For example, quantum dots can be used for the display element 550 (i, j). Specifically, QDLED (Quabutum Dot LED) or the like can be used. Thereby, the half value width of a spectrum is narrow and can emit the light of a bright color.

The display element 550 (i, j) includes an electrode 551 (i, j), an electrode 552, and a layer 553 (j) containing a light-emitting material.

The electrode 551 (i, j) is electrically connected to the pixel circuit 530 (i, j) at the connection portion 591A. In addition, the pixel circuit 530 (i, j) is electrically connected to the wiring ANO at the connection portion 591B.

For example, a layer containing a light-emitting material such as a laminated material laminated so as to emit blue light, a laminated material laminated so as to emit green light, or a laminated material laminated so as to emit red light. 553 (j).

For example, a strip-shaped stacked material that is long in the column direction along the signal line S1 (j) can be used for the layer 553 (j) containing a light-emitting material.

For example, a stacked material stacked to emit white light can be used for the display element 550 (i, j). Specifically, a layer including a light emitting material including a fluorescent material that emits blue light, a layer including a material other than a fluorescent material that emits green and red light, or a material other than a fluorescent material that emits yellow light. A stack material in which the layers including the layers are stacked can be used for the display element 550 (i, j).

<< Dryant 578 >>
The desiccant 578 includes a region sandwiched between the functional layer 520 and the substrate 770.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 2)
In this embodiment, the structure of the display panel of one embodiment of the present invention will be described with reference to FIGS.

FIG. 17 illustrates a structure of a display panel of one embodiment of the present invention. FIG. 17A is a block diagram illustrating a structure of a display panel of one embodiment of the present invention, and FIG. 17B is a circuit diagram illustrating a structure of the pixel illustrated in FIG.

18A illustrates a structure of the driver circuit SD (1) of the display panel of one embodiment of the present invention, and FIG. 18B illustrates a structure of the digital-analog converter circuit.

<Configuration Example of Display Panel 1. >
A display panel 700 described in this embodiment includes a display region 231 and a digital-analog converter circuit DAC (1) (see FIG. 17A). In addition, a digital operation unit (Digital Block) can be used for the drive circuit SD (1).

<< Display area 231 >>
The display area 231 includes a pixel 702 (i, j) and a signal line S1 (j).

The pixel 702 (i, j) includes a pixel circuit 530 (i, j) (see FIG. 17B).

The pixel circuit 530 (i, j) includes a transistor Tr3.

The transistor Tr3 includes a third semiconductor, and the third semiconductor includes a metal oxide. For example, the metal oxide described in Embodiment 3 can be used.

<< Digital-to-analog converter circuit DAC >>
The digital-analog conversion circuit DAC is supplied with a parallel signal and supplies an analog signal.

The digital-analog converter circuit DAC includes a pass transistor / logic circuit PTL and a resistor string R-string (see FIGS. 18A and 18B).

The resistor string R-string is electrically connected to the pass transistor logic circuit PTL.

The pass transistor / logic circuit PTL includes a transistor Tr4.

The signal line S1 (j) is electrically connected to one of the source electrode and the drain electrode of the transistor Tr4.

The transistor Tr4 includes a fourth semiconductor, and the fourth semiconductor includes an element included in the third semiconductor. Note that the transistor Tr4 has a switch function. For example, the resistor string R-string and the signal line S1 (j) are electrically connected based on the signal DATAB_LS [7].

Thus, an analog signal obtained by converting a digital signal into a predetermined voltage can be supplied to a pixel electrically connected to the signal line. Alternatively, a transistor having the same semiconductor as that of a pixel transistor can be used for the pass transistor / logic circuit of the digital-analog converter circuit. Alternatively, part of the process for manufacturing the pixel circuit can be combined with part of the process for manufacturing the pass transistor / logic circuit. As a result, a novel display panel that is highly convenient or reliable can be provided.

<Configuration Example of Display Panel 2. >
A display panel 700 described in this embodiment includes a shift register SR and a latch circuit LTC (see FIG. 18A).

The latch circuit LTC is electrically connected to the shift register SR. For example, a parallel signal can be supplied using the shift register SR and the latch circuit LTC.

The pass transistor / logic circuit PTL is electrically connected to the latch circuit LTC.

Shift register SR includes only n-type transistors, and the latch circuit includes only n-type transistors.

(Embodiment 3)
In this embodiment, a metal oxide that can be used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention will be described. Note that in the case where a metal oxide is used for the semiconductor layer of the transistor, the metal oxide may be read as an oxide semiconductor.

An oxide semiconductor is classified into a single crystal oxide semiconductor and a non-single-crystal oxide semiconductor. As the non-single-crystal oxide semiconductor, a CAAC-OS (c-axis-aligned crystal oxide semiconductor), a polycrystalline oxide semiconductor, an nc-OS (nanocrystalline oxide semiconductor), a pseudo-amorphous oxide semiconductor (a-like oxide OS) : Amorphous-like oxide semiconductor) and amorphous oxide semiconductor.

Further, as one of non-single-crystal oxide semiconductors, an oxide semiconductor called a semi-crystalline oxide semiconductor can be given. A semicrystalline oxide semiconductor has an intermediate structure between a single crystal oxide semiconductor and an amorphous oxide semiconductor. A semicrystalline oxide semiconductor has a more stable structure than an amorphous oxide semiconductor. For example, as a semicrystalline oxide semiconductor, there is an oxide semiconductor having a CAAC structure and a CAC (Cloud-Aligned Composite) structure. Details of the CAC will be described below.

Alternatively, a CAC-OS (Cloud-Aligned Composite Oxide Semiconductor) may be used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention.

Note that the above-described non-single-crystal oxide semiconductor or CAC-OS can be preferably used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention. As the non-single-crystal oxide semiconductor, nc-OS or CAAC-OS can be preferably used.

Note that in one embodiment of the present invention, a CAC-OS is preferably used as the semiconductor layer of the transistor. With the use of the CAC-OS, high electrical characteristics or high reliability can be imparted to the transistor.

Details of the CAC-OS will be described below.

The CAC-OS or the CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a function as a semiconductor in the whole material. Note that in the case where a CAC-OS or a CAC-metal oxide is used for a channel formation region of a transistor, the conductive function is a function of flowing electrons (or holes) serving as carriers, and the insulating function is a carrier. This function prevents electrons from flowing. A function of switching (a function of turning on / off) can be imparted to CAC-OS or CAC-metal oxide by causing the conductive function and the insulating function to act complementarily. In CAC-OS or CAC-metal oxide, by separating each function, both functions can be maximized.

In addition, the CAC-OS or the CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. In the material, the conductive region and the insulating region may be separated at the nanoparticle level. In addition, the conductive region and the insulating region may be unevenly distributed in the material, respectively. In addition, the conductive region may be observed with the periphery blurred and connected in a cloud shape.

In CAC-OS or CAC-metal oxide, the conductive region and the insulating region are dispersed in the material with a size of 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm, respectively. There is.

Further, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxide includes a component having a wide gap caused by an insulating region and a component having a narrow gap caused by a conductive region. In the case of the configuration, when the carrier flows, the carrier mainly flows in the component having the narrow gap. In addition, the component having a narrow gap acts in a complementary manner to the component having a wide gap, and the carrier flows through the component having the wide gap in conjunction with the component having the narrow gap. Therefore, when the CAC-OS or the CAC-metal oxide is used for a channel formation region of a transistor, high current driving force, that is, high on-state current and high field-effect mobility can be obtained in the on-state of the transistor.

That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite (metal matrix composite) or a metal matrix composite (metal matrix composite).

The CAC-OS is one structure of a material in which an element constituting a metal oxide is unevenly distributed with a size of 0.5 nm to 10 nm, preferably, 1 nm to 2 nm or near. In the following, in a metal oxide, one or more metal elements are unevenly distributed, and a region having the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm or near. The mixed state is also called mosaic or patch.

Note that the metal oxide preferably contains at least indium. In particular, it is preferable to contain indium and zinc. In addition, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. One kind or plural kinds selected from may be included.

For example, a CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide among CAC-OSs may be referred to as CAC-IGZO in particular) is an indium oxide (hereinafter referred to as InO). _X1 (X1 is greater real than 0) and.), or indium zinc oxide _{_{_{(hereinafter, in X2 Zn Y2 O Z2 (}}} X2, Y2, and Z2 is larger real than 0) and a.), gallium An oxide (hereinafter referred to as GaO _X3 (X3 is a real number greater than 0)) or a gallium zinc oxide (hereinafter referred to as Ga _X4 Zn _Y4 O _Z4 (where X4, Y4, and Z4 are greater than 0)) to.) and the like, the material becomes mosaic by separate into, mosaic _{InO X1} or _in X2 _Zn Y2 _{O Z2,} is a configuration in which uniformly distributed in the film (hereinafter, click Also called Udo-like.) A.

That, CAC-OS includes a region _{GaO X3} is the main _component, and In _{X2 Zn} Y2 _{O Z2,} or _{InO X1} is the main component region is a composite metal oxide having a structure that is mixed. Note that in this specification, for example, the first region indicates that the atomic ratio of In to the element M in the first region is larger than the atomic ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that in the second region.

Note that IGZO is a common name and sometimes refers to one compound of In, Ga, Zn, and O. As a typical example, a crystal represented by InGaO ₃ (ZnO) _m1 (m1 is a natural number) or In _{(1 + x0)} Ga _(1-x0) O ₃ (ZnO) _m0 (− ≦ x0 ≦ 1, m0 is an arbitrary number). Compounds.

The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC (c-axis aligned crystal) structure. The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without being oriented in the ab plane.

On the other hand, CAC-OS relates to a material structure of a metal oxide. CAC-OS refers to a region that is observed in the form of nanoparticles mainly composed of Ga in a material structure including In, Ga, Zn, and O, and nanoparticles that are partially composed mainly of In. The region observed in a shape is a configuration in which the regions are randomly dispersed in a mosaic shape. Therefore, in the CAC-OS, the crystal structure is a secondary element.

Note that the CAC-OS does not include a stacked structure of two or more kinds of films having different compositions. For example, a structure composed of two layers of a film mainly containing In and a film mainly containing Ga is not included.

Incidentally, a region _{GaO X3} is the main _component, and In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component region, in some cases clear boundary can not be observed.

Instead of gallium, selected from aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. In the case where one or a plurality of types are included, the CAC-OS includes a region that is observed in a part of a nanoparticle mainly including the metal element and a nanoparticle mainly including In. The region observed in the form of particles refers to a configuration in which each region is randomly dispersed in a mosaic shape.

The CAC-OS can be formed by a sputtering method under a condition where the substrate is not intentionally heated, for example. In the case where a CAC-OS is formed by a sputtering method, any one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as a deposition gas. Good. Further, the flow rate ratio of the oxygen gas to the total flow rate of the deposition gas during film formation is preferably as low as possible. .

The CAC-OS has a feature that a clear peak is not observed when measurement is performed using a θ / 2θ scan by an out-of-plane method, which is one of X-ray diffraction (XRD) measurement methods. Have. That is, it can be seen from X-ray diffraction that no orientation in the ab plane direction and c-axis direction of the measurement region is observed.

In addition, in the CAC-OS, an electron diffraction pattern obtained by irradiating an electron beam with a probe diameter of 1 nm (also referred to as a nanobeam electron beam) has a ring-like region having a high luminance and a plurality of bright regions in the ring region. A point is observed. Therefore, it can be seen from the electron beam diffraction pattern that the crystal structure of the CAC-OS has an nc (nano-crystal) structure having no orientation in the planar direction and the cross-sectional direction.

Further, for example, in a CAC-OS in an In—Ga—Zn oxide, a region in which GaO _X3 is a main component is obtained by EDX mapping obtained by using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is unevenly distributed and mixed.

CAC-OS has a structure different from that of an IGZO compound in which metal elements are uniformly distributed, and has a property different from that of an IGZO compound. That is, in the CAC-OS, a region in which GaO _X3 or the like is a main component and a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component are phase-separated from each other, and a region in which each element is a main component. Has a mosaic structure.

Here, the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component is a region having higher conductivity than a region containing GaO _X3 or the like as a main component. _That, In _{X2 Zn} Y2 _{O Z2} or _{InO X1,} is an area which is the main component, by carriers flow, expressed the conductivity of the oxide semiconductor. Accordingly, a region where In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is distributed in a cloud shape in the oxide semiconductor, whereby high field-effect mobility (μ) can be realized.

On the other hand, areas such as _{GaO X3} is the main _component, as compared to the In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component area, it is highly regions insulating. That is, a region containing GaO _X3 or the like as a main component is distributed in the oxide semiconductor, whereby leakage current can be suppressed and good switching operation can be realized.

Therefore, when CAC-OS is used for a semiconductor element, the insulating property caused by GaO _{X3 and the} like and the conductivity caused by In _X2 Zn _Y2 O _Z2 or InO _X1 act in a complementary manner, resulting in high An on-current (I _on ) and high field effect mobility (μ) can be realized.

In addition, a semiconductor element using a CAC-OS has high reliability. Therefore, the CAC-OS is optimal for various semiconductor devices including a display.

In addition, a transistor using a CAAC-OS or a CAC-OS for a semiconductor film can have a short channel length, can have a large on-state current, can have a very small off-state current, and can suppress variations. And can be manufactured on a large glass substrate of 8th to 10th generation. Thereby, it can use suitably for the backplane of a large sized organic EL television.

This embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 4)
In this embodiment, the structure of the display device of one embodiment of the present invention is described with reference to FIGS.

FIG. 10 illustrates a structure of a display device of one embodiment of the present invention. FIG. 10A is a block diagram of a display device of one embodiment of the present invention, and FIGS. 10B-1 to 10B-3 are projections illustrating the appearance of the display device of one embodiment of the present invention. FIG.

<Configuration example of display device>
The display device described in this embodiment includes a control portion 238 and a display panel 700B (see FIG. 10A).

<Control unit 238>
The control unit 238 has a function to which the image information V1 and the control information SS are supplied. For example, a clock signal or a timing signal can be used for the control information SS.

The control unit 238 has a function of generating information V11 based on the image information V1. The control unit 238 has a function of supplying the information V11. For example, the information V11 includes a gradation of 8 bits or more, preferably 12 bits or more.

For example, the control unit 238 includes a timing controller 233, an expansion circuit 234, and an image processing circuit 235M.

<< Timing controller 233 >>
The timing controller 233 sends the control information SS to the drive circuit GDA (1) and the drive circuit GDB (1), the drive circuit GDA (2) and the drive circuit GDB (2), and the drive circuits SD (1) to SD (3). The function to supply to. As a result, the operations of the plurality of drive circuits can be synchronized.

Note that the timing controller 233 can be included in the display panel. For example, the timing controller 233 mounted on a rigid board can be used for a display panel by being electrically connected to a driving circuit using a flexible printed board.

<< Display panel 700B >>
The display panel 700B has a function of being supplied with the information V11. The display panel 700B includes a pixel 702 (i, j). For example, the scanning line G1 (i) is supplied with a selection signal at a frequency of 60 Hz or more, preferably 120 Hz or more. For example, the driver circuit GDA (1), the driver circuit GDB (1), the driver circuit GDA (2), and the driver circuit GDB (2) have a function of supplying a selection signal.

The pixel 702 (i, j) includes a display element. The display element has a function of displaying based on the information V11. For example, a liquid crystal element can be used for the display element.

For example, the display panel described in Embodiment 1 can be used for the display panel 700B.

Thereby, image information can be displayed using a display element. As a result, a novel display device that is highly convenient or reliable can be provided. Alternatively, for example, a television receiving system (see FIG. 10B-1), a video monitor (see FIG. 10B-2), a notebook computer (see FIG. 10B-3), or the like is provided. Can do.

<< Extension circuit 234 >>
The expansion circuit 234 has a function of expanding the image information V1 supplied in a compressed state. The decompression circuit 234 includes a storage unit. The storage unit has a function of storing, for example, decompressed image information.

<< Image processing circuit 235M >>
The image processing circuit 235M includes a region, for example.

The area has a function of storing information included in the image information V1, for example.

The image processing circuit 235M has, for example, a function of correcting the image information V1 based on a predetermined characteristic curve to generate the information V11 and a function of supplying the information V11. Specifically, it has a function of generating information V11 so that the display element displays a good image.

(Embodiment 5)
In this embodiment, the structure of the input / output device of one embodiment of the present invention is described with reference to FIGS.

FIG. 11 is a block diagram illustrating a structure of the input / output device of one embodiment of the present invention.

<Configuration example of input / output device>
The input / output device described in this embodiment includes an input unit 240 and a display unit 230 (see FIG. 11). For example, the display panel 700 described in Embodiment 1 can be used for the display portion 230. Note that a structure including the input portion 240 and the display portion 230 can be referred to as an input / output panel 700TP.

The input unit 240 includes a detection area 241. The input unit 240 has a function of detecting an object close to the detection area 241.

The detection region 241 includes a region overlapping with the pixel 702 (i, j).

<< Input unit 240 >>
The input unit 240 includes a detection area 241. The input unit 240 can include an oscillation circuit OSC and a detection circuit DC (see FIG. 11).

<< Detection area 241 >>
The detection area 241 includes, for example, one or a plurality of detection elements.

The detection region 241 includes a group of detection elements 775 (g, 1) to detection elements 775 (g, q) and another group of detection elements 775 (1, h) to detection elements 775 (p, h). (See FIG. 11). Note that g is an integer of 1 to p, h is an integer of 1 to q, and p and q are integers of 1 or more.

The group of sensing elements 775 (g, 1) to 775 (g, q) includes the sensing elements 775 (g, h) and are arranged in the row direction (direction indicated by an arrow R2 in the drawing). Note that the direction indicated by the arrow R2 in FIG. 11 may be the same as or different from the direction indicated by the arrow R1 in FIG.

Further, another group of the detection elements 775 (1, h) to 775 (p, h) includes the detection elements 775 (g, h), and the column direction (in the drawing, indicated by an arrow C2) that intersects the row direction. (Direction shown).

<< Sensing element >>
The detection element has a function of detecting an adjacent pointer. For example, a finger or a stylus pen can be used as the pointer. For example, a metal piece or a coil can be used for the stylus pen.

Specifically, a capacitive proximity sensor, an electromagnetic induction proximity sensor, an optical proximity sensor, a resistive proximity sensor, or the like can be used as the detection element.

A plurality of types of sensing elements can also be used in combination. For example, a detection element that detects a finger and a detection element that detects a stylus pen can be used in combination. Thereby, the type of the pointer can be determined. Alternatively, different instructions can be associated with the detection information based on the determined type of pointer. Specifically, when it is determined that a finger is used as the pointer, the detection information can be associated with the gesture. Alternatively, when it is determined that the stylus pen is used as the pointer, the detection information can be associated with the drawing process.

Specifically, a finger can be detected by using a capacitive or optical proximity sensor. Alternatively, the stylus pen can be detected using an electromagnetic induction type or optical type proximity sensor.

(Embodiment 6)
In this embodiment, a structure of an information processing device of one embodiment of the present invention will be described with reference to FIGS.

FIG. 12A is a block diagram illustrating a structure of an information processing device of one embodiment of the present invention. 12B and 12C are projection views for explaining an example of the appearance of the information processing apparatus 200. FIG.

FIG. 13 is a flowchart illustrating a program according to one embodiment of the present invention. FIG. 13A is a flowchart illustrating main processing of a program of one embodiment of the present invention, and FIG. 13B is a flowchart illustrating interrupt processing.

FIG. 14 is a diagram illustrating a program according to one embodiment of the present invention. FIG. 14A is a flowchart illustrating a program interrupt process of one embodiment of the present invention, and FIG. 14B is a timing chart illustrating the operation of the information processing device of one embodiment of the present invention.

<Configuration example 1 of information processing apparatus>>
The information processing device 200 described in this embodiment includes an input / output device 220 and an arithmetic device 210 (see FIG. 12A). The input / output device is electrically connected to the arithmetic device 210. Further, the information processing device 200 can include a housing (see FIG. 12B or FIG. 12C).

The input / output device 220 includes a display portion 230 and an input portion 240 (see FIG. 12A). The input / output device 220 includes a detection unit 250. In addition, the input / output device 220 can include a communication unit 290.

The input / output device 220 has a function of supplying image information V1 or control information SS, and a function of supplying position information P1 or detection information DS.

The arithmetic device 210 has a function of being supplied with the position information P1 or the detection information DS. The arithmetic device 210 has a function of supplying image information V1. The arithmetic device 210 has a function of operating based on the position information P1 or the detection information DS, for example.

Note that the housing has a function of housing the input / output device 220 or the arithmetic device 210. Alternatively, the housing has a function of supporting the display unit 230 or the arithmetic device 210.

The display unit 230 has a function of displaying an image based on the image information V1. The display unit 230 has a function of displaying an image based on the control information SS.

The input unit 240 has a function of supplying the position information P1.

The detection unit 250 has a function of supplying detection information DS. For example, the detection unit 250 has a function of detecting the illuminance of an environment where the information processing apparatus 200 is used, and a function of supplying illuminance information.

Thereby, the information processing apparatus can operate by grasping the intensity of light received by the casing of the information processing apparatus in an environment where the information processing apparatus is used. Alternatively, the user of the information processing apparatus can select a display method. As a result, a novel information processing apparatus that is highly convenient or reliable can be provided.

Below, each element which comprises information processing apparatus is demonstrated. Note that these configurations cannot be clearly separated, and one configuration may serve as another configuration or may include a part of another configuration. For example, a touch panel in which a touch sensor is superimposed on a display panel is not only a display unit but also an input unit.

<Configuration example>
The information processing device 200 of one embodiment of the present invention includes a housing or the arithmetic device 210.

The computing device 210 includes a computing unit 211, a storage unit 212, a transmission path 214, and an input / output interface 215.

Further, the information processing device of one embodiment of the present invention includes the input / output device 220.

The input / output device 220 includes a display unit 230, an input unit 240, a detection unit 250, and a communication unit 290.

《Information processing device》
The information processing device of one embodiment of the present invention includes the arithmetic device 210 or the input / output device 220.

<< Calculation device 210 >>
The calculation device 210 includes a calculation unit 211 and a storage unit 212. A transmission path 214 and an input / output interface 215 are provided.

<< Calculation unit 211 >>
The calculation unit 211 has a function of executing a program, for example.

<< Storage unit 212 >>
The storage unit 212 has a function of storing, for example, a program executed by the calculation unit 211, initial information, setting information, or an image.

Specifically, a hard disk, a flash memory, a memory including a transistor including an oxide semiconductor, or the like can be used.

<< Input / output interface 215, transmission path 214 >>
The input / output interface 215 includes a terminal or a wiring, and has a function of supplying information and receiving information. For example, the transmission line 214 can be electrically connected. Further, the input / output device 220 can be electrically connected.

The transmission path 214 includes wiring, supplies information, and has a function of being supplied with information. For example, the input / output interface 215 can be electrically connected. Further, it can be electrically connected to the calculation unit 211, the storage unit 212, or the input / output interface 215.

<< Input / output device 220 >>
The input / output device 220 includes a display unit 230, an input unit 240, a detection unit 250, or a communication unit 290. For example, the input / output device described in Embodiment 5 can be used. Thereby, power consumption can be reduced.

<< Display unit 230 >>
The display unit 230 includes a control unit 238, a drive circuit GD, a drive circuit SD, and a display panel 700B (see FIG. 10). For example, the display device described in Embodiment 4 can be used for the display portion 230.

<< Input unit 240 >>
Various human interfaces or the like can be used for the input unit 240 (see FIG. 12).

For example, a keyboard, mouse, touch sensor, microphone, camera, or the like can be used for the input unit 240. Note that a touch sensor including a region overlapping with the display portion 230 can be used. An input / output device including a touch sensor including a display unit 230 and a region overlapping with the display unit 230 can be referred to as a touch panel or a touch screen.

For example, the user can make various gestures (tap, drag, swipe, pinch in, etc.) using a finger touching the touch panel as a pointer.

For example, the computing device 210 may analyze information such as the position or trajectory of a finger that touches the touch panel, and a specific gesture may be supplied when the analysis result satisfies a predetermined condition. Accordingly, the user can supply a predetermined operation command associated with the predetermined gesture in advance using the gesture.

For example, the user can supply a “scroll command” for changing the display position of the image information using a gesture for moving a finger that touches the touch panel along the touch panel.

<< Detection unit 250 >>
The detection unit 250 has a function of detecting surrounding conditions and supplying detection information. Specifically, illuminance information, posture information, pressure information, position information, and the like can be supplied.

For example, a light detector, an attitude detector, an acceleration sensor, an orientation sensor, a GPS (Global positioning System) signal receiving circuit, a pressure sensor, a temperature sensor, a humidity sensor, a camera, or the like can be used for the detection unit 250.

<< Communication unit 290 >>
The communication unit 290 has a function of supplying information to the network and acquiring information from the network.

"program"
The program of one embodiment of the present invention includes the following steps (see FIG. 13A).

[First step]
In the first step, the settings are initialized (see FIGS. 13A and S1).

For example, predetermined image information to be displayed at startup, a predetermined mode for displaying the image information, and information for specifying a predetermined display method for displaying the image information are acquired from the storage unit 212. Specifically, one still image information or other moving image information can be used as predetermined image information. Further, the first mode or the second mode can be used as a predetermined mode.

[Second step]
In the second step, interrupt processing is permitted (see FIGS. 13A and S2). Note that an arithmetic unit that is permitted to perform interrupt processing can perform interrupt processing in parallel with main processing. The arithmetic unit that has returned to the main process from the interrupt process can reflect the result obtained by the interrupt process to the main process.

Note that when the counter value is an initial value, the arithmetic unit performs interrupt processing, and when returning from the interrupt processing, the counter may be set to a value other than the initial value. As a result, interrupt processing can always be performed after the program is started.

[Third step]
In the third step, the image information is displayed using the predetermined mode or the predetermined display method selected in the first step or the interruption process (see FIGS. 13A and 13). The predetermined mode specifies a mode for displaying image information, and the predetermined display method specifies a method for displaying image information. Further, for example, it can be used as information for displaying the image information V1.

For example, one method for displaying the image information V1 can be associated with the first mode. Alternatively, another method for displaying the image information V1 can be associated with the second mode. Thereby, a display method can be selected based on the selected mode.

<First mode>
Specifically, a method of supplying a selection signal to one scanning line at a frequency of 30 Hz or more, preferably 60 Hz or more, and displaying based on the selection signal can be associated with the first mode.

For example, when the selection signal is supplied at a frequency of 30 Hz or higher, preferably 60 Hz or higher, the motion of the moving image can be displayed smoothly.

For example, when an image is updated at a frequency of 30 Hz or higher, preferably 60 Hz or higher, an image that changes so as to smoothly follow the user's operation can be displayed on the information processing apparatus 200 being operated by the user.

<< Second mode >>
Specifically, a method for supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute, and performing display based on the selection signal, Can be associated with a mode.

When the selection signal is supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute, a display in which flicker or flicker is suppressed can be displayed. In addition, power consumption can be reduced.

For example, when the information processing apparatus 200 is used for a clock, the display can be updated at a frequency of once per second or a frequency of once per minute.

By the way, for example, when a light-emitting element is used as a display element, the light-emitting element can emit light in a pulse shape to display image information. Specifically, the organic EL element can emit light in a pulse shape, and the afterglow can be used for display. Since the organic EL element has excellent frequency characteristics, there are cases where the time for driving the light emitting element can be shortened and the power consumption can be reduced. Alternatively, heat generation is suppressed, so that deterioration of the light-emitting element can be reduced in some cases.

[Fourth step]
In the fourth step, if the end command is supplied, the process proceeds to the fifth step, and if the end command is not supplied, the third step is selected (see FIGS. 13A and S4). ).

For example, an end command supplied in the interrupt process may be used for determination.

[Fifth step]
In the fifth step, the program is terminated (see FIGS. 13A and S5).

<Interrupt processing>
The interrupt process includes the following sixth to eighth steps (see FIG. 13B).

[Sixth Step]
In the sixth step, for example, the detection unit 250 is used to detect the illuminance of the environment in which the information processing apparatus 200 is used (see FIGS. 13B and S6). Note that the color temperature or chromaticity of the ambient light may be detected instead of the illuminance of the environment.

[Seventh Step]
In the seventh step, a display method is determined based on the detected illuminance information (see FIGS. 13B and S7). For example, the display brightness is determined not to be too dark or too bright.

When the color temperature of ambient light or the chromaticity of ambient light is detected in the sixth step, the display color may be adjusted.

[Eighth step]
In the eighth step, the interrupt process is terminated (see FIGS. 13B and S8).

<Configuration example 2 of information processing apparatus>>
Another structure of the information processing device of one embodiment of the present invention is described with reference to FIG.

FIG. 14A is a flowchart illustrating a program of one embodiment of the present invention. FIG. 14A is a flowchart for explaining interrupt processing different from the interrupt processing shown in FIG.

The configuration example 2 of the information processing device is different from the interrupt processing described with reference to FIG. 13B in that the interrupt processing includes a step of changing the mode based on the supplied predetermined event. . Here, different portions will be described in detail, and the above description will be applied to portions that can use the same configuration.

<Interrupt processing>
The interrupt process includes the following sixth to eighth steps (see FIG. 14A).

[Sixth Step]
In the sixth step, when a predetermined event is supplied, the process proceeds to the seventh step, and when the predetermined event is not supplied, the process proceeds to the eighth step (see FIGS. 14A and U6). ). For example, it can be used as a condition whether or not a predetermined event is supplied during a predetermined period. Specifically, the predetermined period can be a period of 5 seconds or less, 1 second or less, or 0.5 seconds or less, preferably 0.1 seconds or less and longer than 0 seconds.

[Seventh Step]
In the seventh step, the mode is changed (see FIGS. 14A and U7). Specifically, when the first mode is selected, the second mode is selected, and when the second mode is selected, the first mode is selected.

For example, the display mode can be changed for some areas of the display unit 230. Specifically, the display mode can be changed for a region where the driver circuit GDB of the display portion 230 including the driver circuit GDA, the driver circuit GDB, and the driver circuit GDC supplies a selection signal (see FIG. 14B). .

For example, when a predetermined event is supplied to the input unit 240 of an area where the drive circuit GDB supplies a selection signal, the display mode of the area can be changed. Specifically, the frequency of the selection signal supplied by the drive circuit GDB can be changed. Thereby, for example, the display of the region where the drive circuit GDB supplies the selection signal can be updated without operating the drive circuit GDA and the drive circuit GDC. Alternatively, power consumed by the driver circuit can be suppressed.

[Eighth step]
In the eighth step, the interrupt process is ended (see FIGS. 14A and U8). Note that interrupt processing may be repeatedly executed during a period in which main processing is being executed.

《Predetermined event》
For example, an event such as “click” or “drag” supplied using a pointing device such as a mouse, an event such as “tap”, “drag” or “swipe” supplied to a touch panel using a finger or the like as a pointer Can be used.

Further, for example, an argument of a command associated with a predetermined event can be given using the position of the slide bar pointed to by the pointer, the swipe speed, the drag speed, or the like.

For example, the information detected by the detection unit 250 can be compared with a preset threshold value, and the comparison result can be used as an event.

Specifically, a pressure-sensitive detector or the like that contacts a button or the like that can be pushed into the housing can be used for the detection unit 250.

《Instructions related to predetermined events》
For example, an end instruction can be associated with a particular event.

For example, a “page turning command” for switching display from one displayed image information to another image information can be associated with a predetermined event. Note that an argument that determines a page turning speed used when executing the “page turning instruction” can be given using a predetermined event.

For example, a “scroll command” for moving the display position of a part of one image information displayed to display another part continuous to the part can be associated with a predetermined event. It should be noted that an argument that determines the speed of moving the display position used when executing the “scroll command” can be given using a predetermined event.

For example, a command for setting a display method or a command for generating image information can be associated with a predetermined event. An argument that determines the brightness of the image to be generated can be associated with a predetermined event. Further, an argument for determining the brightness of the image to be generated may be determined based on the brightness of the environment detected by the detection unit 250.

For example, a command for acquiring information distributed using a push-type service using the communication unit 290 can be associated with a predetermined event.

In addition, you may determine the presence or absence of the qualification to acquire information using the positional information which the detection part 250 detects. Specifically, when a user is inside or in a specific classroom, school, conference room, company, building, etc., it may be determined that he / she is qualified to acquire information. Accordingly, for example, the teaching material distributed in a classroom such as a school or a university can be received and the information processing apparatus 200 can be used as a textbook (see FIG. 12C). Alternatively, a material distributed in a conference room of a company or the like can be received and used as a conference material.

(Embodiment 7)
In this embodiment, a structure of an information processing device of one embodiment of the present invention will be described with reference to FIGS.

15 and 16 are diagrams illustrating a configuration of an information processing device of one embodiment of the present invention. FIG. 15A is a block diagram of the information processing apparatus, and FIGS. 15B to 15E are perspective views illustrating the configuration of the information processing apparatus. 16A to 16E are perspective views illustrating the configuration of the information processing device.

<Information processing device>
An information processing device 5200B described in this embodiment includes an arithmetic device 5210 and an input / output device 5220 (see FIG. 15A).

The arithmetic device 5210 has a function of supplying operation information and a function of supplying image information based on the operation information.

The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, and a communication unit 5290, and has a function of supplying operation information and a function of supplying image information. The input / output device 5220 has a function of supplying detection information, a function of supplying communication information, and a function of supplying communication information.

The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 supplies operation information based on the operation of the user of the information processing apparatus 5200B.

Specifically, a keyboard, hardware buttons, a pointing device, a touch sensor, a voice input device, a line-of-sight input device, or the like can be used for the input unit 5240.

The display portion 5230 includes a display panel and has a function of displaying image information. For example, the display panel described in Embodiment 1 can be used for the display portion 5230.

The detection unit 5250 has a function of supplying detection information. For example, it has a function of detecting the surrounding environment where the information processing apparatus is used and supplying it as detection information.

Specifically, an illuminance sensor, an imaging device, a posture detection device, a pressure sensor, a human sensor, or the like can be used for the detection unit 5250.

The communication unit 5290 has a function for supplying communication information and a function for supplying communication information. For example, a function of connecting to another electronic device or a communication network by wireless communication or wired communication is provided. Specifically, it has functions such as wireless local area communication, telephone communication, and short-range wireless communication.

<< Configuration Example 1 of Information Processing Apparatus >>
For example, an outer shape along a cylindrical column or the like can be applied to the display portion 5230 (see FIG. 15B). Further, the information processing device 5200B has a function of changing a display method according to the illuminance of the usage environment. Further, the information processing device 5200B has a function of detecting the presence of a person and changing display contents. Thereby, for example, the information processing apparatus 5200B can be installed on a pillar of a building. Alternatively, the information processing device 5200B can display an advertisement, a guidance, or the like. Alternatively, the information processing device 5200B can be used for digital signage or the like.

<< Configuration Example 2 of Information Processing Apparatus >>
For example, the information processing device 5200B has a function of generating image information based on a locus of a pointer used by the user (see FIG. 15C). Specifically, a display panel having a diagonal line length of 20 inches or more, preferably 40 inches or more, more preferably 55 inches or more can be used. Alternatively, a plurality of display panels can be arranged and used for one display area. Alternatively, a plurality of display panels can be arranged and used for a multi-screen. Accordingly, for example, the information processing apparatus 5200B can be used for an electronic blackboard, an electronic bulletin board, an electronic signboard, and the like.

<< Configuration Example 3 of Information Processing Apparatus >>
For example, the information processing device 5200B has a function of changing the display method in accordance with the illuminance of the usage environment (see FIG. 15D). Thereby, for example, the power consumption of the smart watch can be reduced. Alternatively, for example, an image can be displayed on the smart watch so that the smart watch can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

<< Configuration Example 4 of Information Processing Apparatus >>
The display portion 5230 includes, for example, a curved surface that bends gently along the side surface of the housing (see FIG. 15E). Alternatively, the display unit 5230 includes a display panel, and the display panel has a function of displaying image information on, for example, a front surface, a side surface, and an upper surface. Thereby, for example, image information can be displayed not only on the front surface of the mobile phone but also on the side surface and the upper surface.

<< Configuration Example 5 of Information Processing Apparatus >>
For example, the information processing device 5200B has a function of changing a display method in accordance with the illuminance of the usage environment (see FIG. 16A). Thereby, the power consumption of a smart phone can be reduced. Or an image can be displayed on a smart phone so that a smart phone can be used conveniently also in an environment with strong external light, such as the outdoors of fine weather.

<< Configuration Example of Information Processing Apparatus 6. >>
For example, the information processing device 5200B has a function of changing a display method in accordance with the illuminance of the usage environment (see FIG. 16B). Thus, an image can be displayed on the television system so that the television system can be suitably used even when strong outside light that is inserted indoors on a sunny day.

<< Configuration Example 7 of Information Processing Apparatus >>
For example, the information processing device 5200B has a function of changing a display method in accordance with the illuminance of the usage environment (see FIG. 16C). Thereby, for example, an image can be displayed on the tablet computer so that the tablet computer can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

<< Configuration Example of Information Processing Apparatus 8. >>
For example, the information processing device 5200B has a function of changing a display method in accordance with the illuminance of the usage environment (see FIG. 16D). Thus, for example, the subject can be displayed on the digital camera so that the image can be suitably viewed even in an environment with strong external light such as outdoors on a sunny day.

<< Configuration Example 9 of Information Processing Apparatus >>
For example, the information processing device 5200B has a function of changing the display method in accordance with the illuminance of the usage environment (see FIG. 16E). Thus, for example, an image can be displayed on the personal computer so that the personal computer can be used favorably even in an environment with strong external light such as outdoors on a sunny day.

For example, in this specification and the like, when X and Y are explicitly described as being connected, X and Y are electrically connected, and X and Y are functional. And the case where X and Y are directly connected are disclosed in this specification and the like. Therefore, it is not limited to a predetermined connection relationship, for example, the connection relationship shown in the figure or text, and anything other than the connection relation shown in the figure or text is also described in the figure or text.

Here, X and Y are assumed to be objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

As an example of the case where X and Y are directly connected, an element that enables electrical connection between X and Y (for example, a switch, a transistor, a capacitor, an inductor, a resistor, a diode, a display, etc.) Element, light emitting element, load, etc.) are not connected between X and Y, and elements (for example, switches, transistors, capacitive elements, inductors) that enable electrical connection between X and Y X and Y are not connected via a resistor element, a diode, a display element, a light emitting element, a load, or the like.

As an example of the case where X and Y are electrically connected, an element (for example, a switch, a transistor, a capacitive element, an inductor, a resistance element, a diode, a display, etc.) that enables electrical connection between X and Y is shown. More than one element, light emitting element, load, etc.) can be connected between X and Y. Note that the switch has a function of controlling on / off. That is, the switch is in a conductive state (on state) or a non-conductive state (off state), and has a function of controlling whether or not to pass a current. Alternatively, the switch has a function of selecting and switching a path through which a current flows. Note that the case where X and Y are electrically connected includes the case where X and Y are directly connected.

As an example of the case where X and Y are functionally connected, a circuit (for example, a logic circuit (an inverter, a NAND circuit, a NOR circuit, etc.) that enables a functional connection between X and Y, signal conversion, etc. Circuit (DA conversion circuit, AD conversion circuit, gamma correction circuit, etc.), potential level conversion circuit (power supply circuit (boost circuit, step-down circuit, etc.), level shifter circuit that changes signal potential level, etc.), voltage source, current source, switching Circuit, amplifier circuit (circuit that can increase signal amplitude or current amount, operational amplifier, differential amplifier circuit, source follower circuit, buffer circuit, etc.), signal generation circuit, memory circuit, control circuit, etc.) One or more can be connected between them. As an example, even if another circuit is interposed between X and Y, if the signal output from X is transmitted to Y, X and Y are functionally connected. To do. Note that the case where X and Y are functionally connected includes the case where X and Y are directly connected and the case where X and Y are electrically connected.

In addition, when it is explicitly described that X and Y are electrically connected, a case where X and Y are electrically connected (that is, there is a separate connection between X and Y). And X and Y are functionally connected (that is, they are functionally connected with another circuit between X and Y). And the case where X and Y are directly connected (that is, the case where another element or another circuit is not connected between X and Y). It shall be disclosed in the document. In other words, when it is explicitly described that it is electrically connected, the same contents as when it is explicitly described only that it is connected are disclosed in this specification and the like. It is assumed that

Note that for example, the source (or the first terminal) of the transistor is electrically connected to X through (or not through) Z1, and the drain (or the second terminal or the like) of the transistor is connected to Z2. Through (or without), Y is electrically connected, or the source (or the first terminal, etc.) of the transistor is directly connected to a part of Z1, and another part of Z1 Is directly connected to X, and the drain (or second terminal, etc.) of the transistor is directly connected to a part of Z2, and another part of Z2 is directly connected to Y. Then, it can be expressed as follows.

For example, “X and Y, and the source (or the first terminal or the like) and the drain (or the second terminal or the like) of the transistor are electrically connected to each other. The drain of the transistor (or the second terminal, etc.) and the Y are electrically connected in this order. ” Or “the source (or the first terminal or the like) of the transistor is electrically connected to X, the drain (or the second terminal or the like) of the transistor is electrically connected to Y, and X or the source ( Or the first terminal or the like, the drain of the transistor (or the second terminal, or the like) and Y are electrically connected in this order. Or “X is electrically connected to Y through the source (or the first terminal) and the drain (or the second terminal) of the transistor, and X is the source of the transistor (or the first terminal). Terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y are provided in this connection order. By using the same expression method as in these examples and defining the order of connection in the circuit configuration, the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor are separated. Apart from that, the technical scope can be determined.

Alternatively, as another expression method, for example, “a source (or a first terminal or the like of a transistor) is electrically connected to X through at least a first connection path, and the first connection path is The second connection path does not have a second connection path, and the second connection path includes a transistor source (or first terminal or the like) and a transistor drain (or second terminal or the like) through the transistor. The first connection path is a path through Z1, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y through at least the third connection path. The third connection path is connected and does not have the second connection path, and the third connection path is a path through Z2. " Or, “the source (or the first terminal or the like) of the transistor is electrically connected to X via Z1 by at least a first connection path, and the first connection path is a second connection path. The second connection path has a connection path through the transistor, and the drain (or the second terminal, etc.) of the transistor is at least connected to Z2 by the third connection path. , Y, and the third connection path does not have the second connection path. Or “the source of the transistor (or the first terminal or the like) is electrically connected to X through Z1 by at least a first electrical path, and the first electrical path is a second electrical path Does not have an electrical path, and the second electrical path is an electrical path from the source (or first terminal or the like) of the transistor to the drain (or second terminal or the like) of the transistor; The drain (or the second terminal or the like) of the transistor is electrically connected to Y through Z2 by at least a third electrical path, and the third electrical path is a fourth electrical path. The fourth electrical path is an electrical path from the drain (or second terminal or the like) of the transistor to the source (or first terminal or the like) of the transistor. can do. Using the same expression method as those examples, by defining the connection path in the circuit configuration, the source (or the first terminal or the like) of the transistor and the drain (or the second terminal or the like) are distinguished. The technical scope can be determined.

In addition, these expression methods are examples, and are not limited to these expression methods. Here, it is assumed that X, Y, Z1, and Z2 are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, and the like).

In addition, even when the components shown in the circuit diagram are electrically connected to each other, even when one component has the functions of a plurality of components. There is also. For example, in the case where a part of the wiring also functions as an electrode, one conductive film has both the functions of the constituent elements of the wiring function and the electrode function. Therefore, the term “electrically connected” in this specification includes in its category such a case where one conductive film has functions of a plurality of components.

AF1 Alignment film AF2 Alignment film C11 Capacitance element C12 Capacitance element DS Detection information G1 Scan line KB1 Structure M Transistor P1 Position information S1 Signal line SS Control information SW1 Switch Tm11 Terminal Tm12 Terminal Tm13 Terminal Tr1 Transistor Tr2 Transistor Tr3 Transistor Tr4 Transistor V1 Image Information V11 Information 200 Information processing device 210 Computing device 211 Computing unit 212 Storage unit 214 Transmission path 215 I / O interface 220 I / O device 230 Display unit 231 Display area 233 Timing controller 234 Expansion circuit 235M Image processing circuit 238 Control unit 240 Input unit 241 Detection region 250 Detection unit 290 Communication unit 501C Insulating film 504 Conductive film 506 Insulating film 508 Semiconductor film 508A Region 50 B region 508C region 510 substrate 512A conductive film 512B conductive film 516 insulating film 519B terminal 520 functional layer 521 insulating film 521A insulating film 521B insulating film 524 conductive film 528 insulating film 530 pixel circuit 550 display element 551 electrode 552 electrode 553 light emitting material Layer 578 desiccant 591A connecting portion 591B connecting portion 700 display panel 700B display panel 700TP input / output panel 702 pixel 703 pixel 720 functional layer 750 display element 751 electrode 752 electrode 753 layer containing liquid crystal material 770 substrate 770D functional film 770P functional film 771 Insulating film 775 Detection element 5200B Information processing device 5210 Arithmetic device 5220 Input / output device 5230 Display unit 5240 Input unit 5250 Detection unit 5290 Communication unit

Claims

A buffer amplifier,
A display area;
The buffer amplifier includes a first transistor and a second transistor,
The display area includes signal lines and pixels,
The pixel includes a pixel circuit;
The pixel circuit includes a third transistor,
The signal line is electrically connected to one of a source electrode and a drain electrode of the first transistor;
The signal line is electrically connected to one of a source electrode or a drain electrode of the second transistor;
The signal line is electrically connected to one of a source electrode or a drain electrode of the third transistor;
The first transistor includes a first semiconductor,
The second transistor includes a second semiconductor,
The third transistor includes a third semiconductor,
The display panel, wherein the third semiconductor includes an element included in the second semiconductor.
The first semiconductor includes single crystal silicon;
The display panel according to claim 1, wherein the second semiconductor includes a metal oxide.
Having a semiconductor device,
The semiconductor device includes a digital-analog conversion circuit,
The semiconductor device includes a first terminal, a second terminal, and a third terminal,
The semiconductor device includes the first transistor,
The first terminal is electrically connected to the digital-analog conversion circuit,
The second terminal is electrically connected to the source electrode or the drain electrode of the first transistor;
The second terminal is electrically connected to the signal line;
The display panel according to claim 1, wherein the third terminal is electrically connected to a gate electrode of the second transistor.
A display area;
A digital-analog conversion circuit,
The display area includes pixels and signal lines,
The pixel includes a pixel circuit;
The pixel circuit includes a third transistor,
The signal line is electrically connected to one of a source electrode or a drain electrode of the third transistor;
The third transistor includes a third semiconductor,
The third semiconductor includes a metal oxide,
The digital-analog converter circuit is supplied with a parallel signal,
The digital-analog converter circuit supplies an analog signal,
The digital-analog converter circuit includes a pass transistor logic circuit and a resistor string,
The resistor string is electrically connected to the pass transistor logic circuit;
The pass transistor logic circuit includes a fourth transistor;
The signal line is electrically connected to one of a source electrode and a drain electrode of the fourth transistor;
The fourth transistor includes a fourth semiconductor,
The display panel, wherein the fourth semiconductor includes an element included in the third semiconductor.
A shift register;
And a latch circuit,
The latch circuit is electrically connected to the shift register;
The pass transistor logic circuit is electrically connected to the latch circuit;
The shift register includes only n-type transistors,
The display panel according to claim 4, wherein the latch circuit includes only an n-type transistor.
The display area includes a group of a plurality of pixels, another group of a plurality of pixels, and a scanning line.
The group of pixels is arranged in a row direction,
The group of pixels includes the pixels;
The other group of the plurality of pixels is arranged in a column direction intersecting the row direction,
The scanning line is electrically connected to the plurality of pixels in the group,
The display panel according to claim 1, wherein the signal line is electrically connected to the plurality of pixels of the other group.
The display area includes a plurality of pixels in a matrix,
The display area comprises 7600 or more pixels in the row direction,
The display panel according to claim 1, wherein the display area includes 4300 or more pixels in a column direction.
The display area includes a first pixel, a second pixel, and a third pixel,
The first pixel displays a color having a chromaticity x in the CIE 1931 chromaticity coordinates of greater than 0.680 and less than or equal to 0.720, and a chromaticity y of 0.260 or more and 0.320 or less.
The second pixel displays a color having a chromaticity x in the CIE1931 chromaticity coordinates of 0.130 or more and 0.250 or less, and a chromaticity y of more than 0.710 and 0.810 or less.
The third pixel displays a color having a chromaticity x in a CIE1931 chromaticity coordinate of 0.120 to 0.170 and a chromaticity y of 0.020 to less than 0.060. The display panel described in 1.
A display panel according to claim 1;
A control unit,
The control unit is supplied with image information and control information,
The control unit generates information based on the image information,
The controller supplies the information;
The information includes a gradation of 12 bits or more,
The display panel is supplied with the information,
The scanning line is supplied with a selection signal at a frequency of 60 Hz or more,
The display device displays based on the information.
An input unit and a display unit;
The display unit includes the display panel according to any one of claims 1, 2, 4, and 5,
The input unit includes a detection area,
The input unit detects an object close to the detection area,
The input / output device, wherein the detection area includes an area overlapping with the pixel.
One or more of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, a line-of-sight input device, and a posture detection device; and claim 1, claim 2, claim 4, and claim 4. An information processing apparatus comprising: the display panel according to claim 5.