JPWO2018124046A1 - Imaging device, camera, and imaging method - Google Patents

Abstract

The imaging device (1) is generated by the photoelectric conversion member (111) that generates a charge by the internal photoelectric effect by receiving light in the exposure state to which the voltage of the first predetermined range is applied, and the photoelectric conversion member (111) Read out by the read out circuit (130), which reads out the charge amount stored in each of the plurality of pixel circuits (21) storing the charge in pixel units, and each of the plurality of pixel circuits (21) An imaging device (10) including an output circuit (140) for outputting an output image composed of pixel values based on respective charge amounts, and a photoelectric conversion member (111) in a light shielding state to which a voltage of a second predetermined range is applied And a reduction unit (40) for reducing the influence on the output image by the charge generated by the

Description

  The present invention relates to an imaging device for capturing an image, a camera, and an imaging method.

  BACKGROUND Conventionally, an imaging device that captures an image using an image sensor is known (see, for example, Patent Document 1).

JP, 2008-042180, A

  The image pickup apparatus is desired to improve the image quality of an image to be picked up.

  Then, this indication aims at providing an imaging device, a camera, and an imaging method which can improve the image quality in the image to picturize to the image quality in the image picturized by the conventional imaging device.

  An imaging device according to an aspect of the present disclosure includes a photoelectric conversion member that generates a charge by an internal photoelectric effect by receiving light in an exposure state in which a voltage in a first predetermined range is applied, and a charge generated by the photoelectric conversion member A plurality of pixel circuits for storing pixels in pixel units, a read out circuit for reading out the charge amount stored in each of the plurality of pixel circuits, and a pixel value based on each of the charge amounts read out by the read out circuit. An image pickup element including an output circuit for outputting an output image; and a reduction unit for reducing an influence on the output image due to charges generated by the photoelectric conversion member in a light shielding state to which a voltage of a second predetermined range is applied. Equipped with

  An imaging device according to an aspect of the present disclosure is a photoelectric conversion member that generates a charge due to an internal photoelectric effect by receiving light in an exposure state in which a voltage in a first predetermined range is applied, the first predetermined being applied According to the voltage of the range, the higher the voltage, the higher the photoelectric conversion efficiency, and the photoelectric conversion member that generates the electric charge, and the plurality of electric charges generated by the photoelectric conversion member are accumulated in pixel units. A pixel circuit, a readout circuit for reading out the amount of charge stored in each of the plurality of pixel circuits, and an output circuit for outputting an output image composed of pixel values based on each of the amounts of charge read out by the readout circuit And a voltage control unit that controls a voltage applied to the photoelectric conversion member.

  A camera according to an aspect of the present disclosure includes the imaging device and a lens configured to condense external light on the imaging device.

  An imaging method according to an aspect of the present disclosure is an imaging method performed by an imaging device including an imaging element and a reduction unit, wherein the imaging element receives light in an exposure state in which a voltage of a first predetermined range is applied. The photoelectric conversion member that generates charges by the internal photoelectric effect, a plurality of pixel circuits that accumulate the charges generated by the photoelectric conversion members in pixel units, and the charge amounts accumulated in each of the plurality of pixel circuits An output step of outputting an output image, the output circuit outputting an output image, and an output circuit outputting an output image consisting of pixel values based on respective charge amounts read out by the read out circuit; A reduction step for reducing the influence on the output image by the charge generated by the photoelectric conversion member in the light shielding state to which the voltage of the second predetermined range is applied. Including the door.

  An imaging method according to an aspect of the present disclosure is an imaging method performed by an imaging device including an imaging element and a voltage control unit, and the imaging element receives light in an exposure state in which a voltage of a first predetermined range is applied. A photoelectric conversion member for generating charges by internal photoelectric effect, wherein the generation of the charges is such that the higher the voltage is, the higher the photoelectric conversion efficiency according to the voltage of the first predetermined range to be applied. , A plurality of pixel circuits for storing the charge generated by the photoelectric conversion member in pixel units, a readout circuit for reading out the charge amount stored in each of the plurality of pixel circuits, and the readout And an output circuit for outputting an output image composed of pixel values based on each of the charge amounts read by the circuit, wherein the voltage control unit is configured to output a voltage applied to the photoelectric conversion member. A voltage control step Gosuru, the output circuit, and an output step of outputting the output image.

  According to the imaging device, the camera, and the imaging method according to the present disclosure, the image quality of an image to be captured can be improved relative to the image quality of an image captured by a conventional imaging device.

FIG. 1 is a block diagram showing the configuration of a camera according to the first embodiment. FIG. 2 is a block diagram showing the configuration of the imaging device according to the first embodiment. FIG. 3A is a plan view of the photoelectric conversion element according to the first embodiment. FIG. 3B is a side view of the photoelectric conversion element according to Embodiment 1. FIG. 4 is a block diagram showing the configuration of the pixel circuit according to the first embodiment. FIG. 5A is a timing diagram of an imaging start signal and an imaging end signal. FIG. 5B is a timing chart showing the operation of the imaging device according to Embodiment 1. FIG. 6 is a block diagram showing a configuration of a camera according to Embodiment 2. FIG. 7 is a block diagram showing a configuration of an imaging device according to Embodiment 2. FIG. 8 is a block diagram showing the configuration of the pixel circuit according to the second embodiment. FIG. 9A is a timing diagram of an imaging start signal and an imaging end signal. FIG. 9B is a timing chart showing the state of the imaging device according to Embodiment 2. FIG. 10 is a schematic view showing a period of light blocking leakage. FIG. 11 is a block diagram showing a configuration of a camera according to Embodiment 3. FIG. 12A is a timing diagram of an imaging start signal and an imaging end signal. FIG. 12B is a timing diagram of the aperture amount designation signal. FIG. 12C is a timing diagram of the maximum aperture amount signal. FIG. 12D is a timing chart showing the state of the aperture according to Embodiment 3. FIG. 12E is a timing chart showing the state of the imaging device according to Embodiment 3. FIG. 13 is a block diagram showing the configuration of a camera according to Embodiment 4. FIG. 14 is a block diagram showing a configuration of an imaging device according to Embodiment 4. FIG. 15A is a timing diagram of an imaging start signal and an imaging end signal. FIG. 15B is a timing diagram of the aperture amount designation signal B. FIG. 15C is a timing diagram of the applied voltage change signal. FIG. 15D is a timing diagram of the light quantity of the external light collected on the photoelectric conversion member according to the fourth embodiment. FIG. 15E is a timing diagram of voltages applied to the photoelectric conversion member according to the fourth embodiment. FIG. 15F is a timing diagram of the photoelectric conversion efficiency of the photoelectric conversion member according to Embodiment 4. FIG. 16 is a block diagram showing a configuration of a camera according to Embodiment 5. FIG. 17 is a specific example of the reference live view image. FIG. 18A is a timing chart showing the state of the imaging device according to Embodiment 5. FIG. 18B is a timing diagram of voltages applied to the photoelectric conversion member according to the fifth embodiment. FIG. 19A is a timing diagram of an imaging start signal and an imaging end signal. FIG. 19B is a timing diagram of an applied voltage value signal. FIG. 19C is a timing chart showing the state of the imaging device according to Embodiment 5. FIG. 19D is a timing diagram of voltages applied to the photoelectric conversion member according to the fifth embodiment. FIG. 20A is a perspective view of a digital still camera according to a modification. FIG. 20B is a perspective view of a video camera according to a modification.

  Hereinafter, the embodiment will be described in detail. The embodiments described below each show a preferable specific example of the present disclosure. Numerical values, shapes, materials, components, arrangement positions and connection forms of components, steps, order of steps, and the like shown in the following embodiments are merely examples, and are not intended to limit the present disclosure. The present disclosure is limited only by the claims. Therefore, among the components in the following embodiments, components not described in the independent claim of the present disclosure constitute a more preferable form although it is not necessary to achieve the problems of the present disclosure. It is described as a thing.

Embodiment 1
Here, the imaging device 1 for capturing an image will be described with reference to the drawings.

[1-1. Constitution]
FIG. 1 is a block diagram showing a configuration of a camera 200 according to the first embodiment.

  The camera 200 includes a lens barrel 230 and the imaging device 1. The lens barrel 230 includes an optical system 210 and a lens driving unit 220.

  The optical system 210 is configured of one or more lenses that condense external light on the imaging device 10 of the imaging device 1. Specifically, the optical system 210 includes a zoom lens 211, a camera shake correction lens 212, a focus lens 213, and an aperture 214. By moving the zoom lens 211 along the optical axis 210A, the subject image can be enlarged or reduced. Also, by moving the focus lens 213 along the optical axis 210A, the focus of the subject image can be adjusted. The camera shake correction lens 212 is movable in a plane perpendicular to the optical axis 210A of the optical system 210. By moving the camera shake correction lens 212 in the direction that cancels out the shake of the camera 200, the influence of the shake of the camera 200 on the captured image can be reduced. The aperture 214 has an opening 214A located on the optical axis 210A, and adjusts the size of the opening 214A according to the setting of the user or automatically to adjust the amount of light to be transmitted.

  The lens drive unit 220 includes a zoom actuator for driving the zoom lens 211, a camera shake correction actuator for driving the camera shake correction lens 212, a focus actuator for driving the focus lens 213, and a diaphragm actuator for driving the diaphragm 214. The lens drive unit 220 controls the zoom actuator, the focus actuator, the camera shake correction actuator, and the aperture actuator described above.

  The imaging device 1 includes an imaging element 10, a control unit 20, a reduction unit 40, an image processing unit 260, a memory 270, a card slot 290, an internal memory 340, an operation member 310, and a display monitor 320. It comprises.

  The imaging element 10 captures and outputs an image.

  The reducing unit 40 corrects the image output from the imaging device 10. The reducing unit 40 is realized, for example, by a processor (not shown) executing a program stored in a memory (not shown).

  The image processing unit 260 performs various processes on the image data (here, the image corrected by the reduction unit 40) generated by the imaging device 10 to generate image data to be displayed on the display monitor 320. , And generates image data to be stored in the memory card 300. For example, the image processing unit 260 performs various types of processing such as gamma correction and white balance correction on the image data generated by the imaging device 10. In addition, the image processing unit 260 causes the image data generated by the imaging device 10 to be converted to H.264. It is compressed by a compression format or the like conforming to the H.264 standard or the MPEG2 standard. The image processing unit 260 is realized, for example, by a processor (not shown) executing a program stored in a memory (not shown).

  The control unit 20 controls the operation of the imaging device 10. Further, the control unit 20 controls the entire camera 200. As an example, control unit 20 develops a program recorded in internal memory 340 in memory 270 for temporary storage, and is implemented by execution by a processor (not shown) in control unit 20. .

  The memory 270 also functions as a work memory of the image processing unit 360 and the control unit 20. The memory 270 can be realized by, for example, a DRAM, an SRAM, or the like.

  The card slot 390 detachably holds the memory card 300. The card slot 290 can be mechanically and electrically connected to the memory card 300. The memory card 300 includes a non-volatile flash memory, a ferroelectric memory, and the like therein, and can store data such as an image file generated by the image processing unit 260.

  The internal memory 340 is configured by a non-volatile flash memory, a ferroelectric memory, or the like. The internal memory 340 stores a control program for controlling the entire camera 200 and the like.

  The operation member 310 is a generic name of a user interface that receives an operation from the user. The operation member 310 includes, for example, a cross key, an enter button, and the like that receive an operation from the user.

  The display monitor 320 has a screen 320A on which an image represented by image data generated by the imaging device 10 and an image represented by image data read from the memory card 300 can be displayed. The display monitor 320 can also display various menu screens and the like for performing various settings of the camera 200 on the screen 320A. A touch panel 320B is disposed on the screen 320A of the display monitor 320. The touch panel 320B can be touched by the user to receive various touch operations. An instruction indicated by a touch operation on the touch panel 320B is notified to the control unit 20, and various processes are performed.

  Hereinafter, among the components of the imaging device 1, the imaging device 10, the control unit 20, and the reduction unit 40 will be described in more detail.

  FIG. 2 is a block diagram showing the configuration of the imaging device 10. As shown in FIG.

  As shown in the figure, the image pickup device 10 includes a photoelectric conversion element 110, a pixel circuit array 120, a readout circuit 130, an output circuit 140, a row scanning circuit 150, a timing control circuit 160, and a voltage application circuit. And 170.

  FIG. 3A is a plan view of the photoelectric conversion element 110, and FIG. 3B is a side view of the photoelectric conversion element 110.

  As shown in FIGS. 3A and 3B, the photoelectric conversion element 110 adheres to the thin film photoelectric conversion member 111, the upper transparent electrode 112 in close contact with the upper surface of the photoelectric conversion member 111, and the lower surface of the photoelectric conversion member 111. , And N × M lower pixel electrodes 113 arranged in a two-dimensional array of N rows and M columns (N and M are integers of 1 or more).

  The photoelectric conversion member 111 generates charges by the internal photoelectric effect by receiving light in a state where a voltage in a first predetermined range not including 0 V is applied (hereinafter, this state is referred to as “exposure state”). . Further, the photoelectric conversion member 111 generates the charge so that the photoelectric conversion efficiency becomes higher as the voltage is higher according to the voltage in the first predetermined range to be applied.

  Here, the photoelectric conversion member 111 is described as an organic thin film having the above-described characteristics. That is, in the first embodiment, the image sensor 10 is an example of an organic CMOS image sensor using an organic thin film as a photoelectric conversion member.

  The photoelectric conversion member 111 is ideally in a state in which a voltage in a second predetermined range including 0 V, which is a range equal to or less than a first predetermined range, is applied (hereinafter, this state is referred to as “light-shielded state” It is desirable not to generate charge due to the internal photoelectric effect even when light is received in.

  However, in the process of manufacturing the photoelectric conversion member 111, the photoelectric conversion member 111 which is actually manufactured receives light in a light shielding state due to the management accuracy of the impurity concentration mixed in the manufacturing material, the management accuracy of the manufacturing process, etc. Therefore, a small amount of charge is generated due to the internal photoelectric effect. Hereinafter, a phenomenon in which a small amount of charge is generated due to the internal photoelectric effect by receiving light in a light blocking state is referred to as “light blocking leakage”.

  The upper transparent electrode 112 is a transparent electrode that applies a voltage that causes a potential difference including 0 with respect to the lower surface to the entire upper surface of the photoelectric conversion member 111.

  The lower pixel electrode 113 is an electrode arranged in a two-dimensional array of N rows and M columns so as to cover the entire lower surface of the photoelectric conversion member 111.

  The lower pixel electrode 113 collects a charge generated in the vicinity of itself among the charges generated by the photoelectric conversion member 111.

  Referring back to FIG. 2 again, the description of the imaging device 10 will be continued.

  The pixel circuit array 120 is a semiconductor device in which N × M pixel circuits 21 are arranged in a two-dimensional array of N rows and M columns, and the photoelectric conversion element 110 is formed on the lower surface side of the photoelectric conversion element 110. It is arranged in layers.

  In the pixel circuit array 120, the pixel circuits 21 are arranged such that the positions of the pixel circuits 21 overlap the positions of the lower pixel electrodes 113 in a one-to-one correspondence, when the imaging device 10 is viewed in plan. It is done.

  FIG. 4 is a block diagram showing the configuration of the pixel circuit 21. As shown in FIG.

  As shown in the figure, the pixel circuit 21 is configured to include a reset transistor 22, an amplification transistor 23, a selection transistor 24, and a charge storage node 25.

  The charge storage node 25 is connected to the lower pixel electrode 113 corresponding to the pixel circuit 21 to which it belongs, the source of the reset transistor 22 and the gate of the amplification transistor 23, and is collected by the lower pixel electrode 113 connected. Accumulate charge.

  The reset transistor 22 has a gate connected to the reset signal line 51, a drain supplied with the reset voltage VRST, and a source connected to the charge storage node 25.

  The reset transistor 22 is turned on by a reset signal delivered from the row scanning circuit 150 (described later) via the reset signal line 51, thereby resetting (initializing) the amount of charge stored in the charge storage node 25. Do.

  In the amplification transistor 23, the charge storage node 25 is connected to the gate, the power supply voltage VDD is supplied to the drain, and the drain of the selection transistor 24 is connected to the source.

  A voltage corresponding to the charge stored in the charge storage node 25 is applied to the gate of the amplification transistor 23.

  For this reason, the amplification transistor 23 functions as a current source for causing a current according to the charge stored in the charge storage node 25 to flow when the selection transistor 24 is in the on state.

  The selection transistor 24 has a gate connected to the selection signal line 52, a drain connected to the source of the amplification transistor 23, and a source connected to the vertical signal line 32.

  The selection transistor 24 is turned on by a selection signal delivered from the row scanning circuit 150 (described later) via the selection signal line 52, and outputs the current flowing to the amplification transistor 23 to the vertical signal line 32.

  As described later, the amount of current of the current output to the vertical signal line 32 is detected by the column readout circuit 31 (described later), whereby charge storage of the pixel circuit 21 including the selection transistor 24 turned on by the selection signal is performed. The amount of charge stored at node 25 is read out.

  With the above configuration, the pixel circuit 21 collects the charge generated by the photoelectric conversion member 111 in units of pixels. Then, in the pixel circuit 21, the amount of charge accumulated in the charge accumulation node 25 is read out nondestructively.

  Referring back to FIG. 2 again, the description of the imaging device 10 will be continued.

  The row scanning circuit 150 has the following accumulated charge amount reset function and the following readout pixel circuit selection function.

  The stored charge amount reset function is performed by using a reset signal line 51 connected to each of the pixel circuits 21 for resetting the charge stored in the charge storage node 25 in each of the pixel circuits 21 constituting the pixel circuit array 120. Delivery function.

  As a result, the reset of the charges accumulated in the charge accumulation nodes 25 of all the pixel circuits 21 included in the pixel circuit array 120 is performed at substantially the same timing.

  In the read pixel circuit selection function, in the pixel circuit array 120, a row (first row) farthest from the read circuit 130 to a row closest to the read circuit 130 (Nth row) are sequentially arranged one by one. A selection signal for turning on the selection transistor 24 in each of the pixel circuits 21 belonging to the corresponding row is delivered via the selection signal line 52 connected to each of the pixel circuits 21 belonging to the corresponding row at predetermined time intervals Δt. It is a function.

  Thereby, the readout of the charge amount stored in the charge storage nodes 25 of all the pixel circuits 21 included in the pixel circuit array 120 is sequentially performed in units of rows from the first row to the N-th row by the readout circuit 130 (described later). It takes N.times..DELTA.t period from the start of readout of the pixel circuits 21 belonging to the first row to the completion of readout of the pixel circuits 21 belonging to the Nth row.

  The readout circuit 130 reads out the amount of charge stored in each of the pixel circuits 21 constituting the pixel circuit array 120.

  The readout circuit 130 includes M column readout circuits 31 corresponding to each of the M columns of the pixel circuit array 120.

  The column readout circuit 31 includes a pixel circuit 21 (this pixel circuit 21 includes a selection transistor 24 turned on by a selection signal via a vertical signal line 32 connected to each of the pixel circuits 21 belonging to the corresponding column). Is also referred to as “pixel circuit 21 to be read out.” By detecting the amount of current flowing in the amplification transistor 23 of “the read out pixel circuit 21”, the amount of charge stored in the charge storage node 25 of the pixel circuit 21 to be read out A K-bit (K is a positive integer, for example, 8) digital signal indicating the amount of charge read out is output as the pixel value of the pixel circuit 21 to be read.

  The output circuit 140 outputs an output image composed of pixel values output from the readout circuit 130. That is, the output circuit 140 outputs an output image composed of pixel values based on the respective charge amounts read by the reading circuit 130.

  The voltage application circuit 170 applies a voltage to the photoelectric conversion member 111. More specifically, the voltage application circuit 170 applies a voltage between the upper surface and the lower surface of the photoelectric conversion member 111 by controlling the voltage of the upper transparent electrode 112.

  The timing control circuit 160 controls the operation timing of the row scanning circuit 150, the operation timing of the read circuit 130, and the operation timing of the voltage application circuit 170. That is, the timing control circuit 160 controls the timing for executing the stored charge amount reset function by the row scanning circuit 150 and the timing for executing the readout pixel circuit selection function, and the timing control circuit 160 is selected by the selection signal by the readout circuit 130. The timing at which the amount of charge stored in the charge storage node 25 of the pixel circuit 21 is read is controlled, and the timing at which the photoelectric conversion element 110 is exposed by the voltage application circuit 170 and the photoelectric conversion element 110 is blocked. Control the timing.

  Returning to FIG. 1 again, the description of the imaging device 1 will be continued.

  The control unit 20 has the following imaging control function.

  The imaging control function is a function that causes the imaging element 10 to capture an image and output an output image. More specifically, an imaging start signal is output to the imaging element 10 at the timing to start imaging, and an imaging end signal is output at a timing when a predetermined exposure period T1 has elapsed after the imaging start signal is output. This is a function that causes the imaging element 10 to capture the image.

  FIG. 5A is a timing diagram of an imaging start signal and an imaging end signal output by the control unit 20.

  As shown in FIG. 5A, the control unit 20 causes the imaging element 10 to delay the output of the imaging end signal by the exposure period T1 rather than the output of the imaging start signal and the imaging start signal. Output as you do.

  When the imaging device 10 receives the imaging start signal output from the control unit 20, the timing control circuit 160 (1) controls the operation timing of the voltage application circuit 170 and performs photoelectric conversion at the timing when the imaging start signal is received. The voltage applied to the member 111 is a first voltage within a first predetermined range, and (2) the operation timing of the row scanning circuit 150 is controlled to receive the imaging start signal, the amount of charge accumulated in the row scanning circuit 150 Execute reset function.

  Then, when the imaging element 10 receives the imaging end signal output from the control unit 20, the timing control circuit 160 controls (1) the operation timing of the voltage application circuit 170 to receive the imaging start signal, The voltage applied to the photoelectric conversion member 111 is a second voltage within the second range, (2) the operation timing of the row scanning circuit 150 and the operation timing of the readout circuit 130 are controlled to receive the imaging end signal Then, the readout of the charge amount stored in the charge storage node 25 for all the pixel circuits 21 configuring the pixel circuit array 120 is started.

  FIG. 5B is a timing chart showing the state of the imaging device 10.

  As illustrated in FIG. 5B, when the imaging device 10 receives the imaging start signal output from the control unit 20, the imaging device 10 receives the charge amount stored in the pixel circuit 21 included in the pixel circuit array 120 at the received timing. Reset (initialize). Further, the imaging device 10 causes the photoelectric conversion element 110 to be in the exposure state during the period from the reception of the imaging start signal to the reception of the imaging end signal, and the period after the imaging completion signal is received. I assume. Then, when the imaging element 10 receives the imaging end signal, the imaging element 10 delays the amount of charge stored in the pixel circuit 21 included in the pixel circuit array 120 at a timing delayed by Δt in order from the first row to the Nth row by row. Read it out.

  As understood from FIG. 5B, a period from the time when the charge amount of the pixel circuit 21 is reset to the time when the charge amount of the pixel circuit 21 is read out (hereinafter, This period is called "charge accumulation period".

  That is, in the pixel circuit 21 positioned in the Kth (K is an integer of 1 or more and N or less) row, the charge accumulation period is T1 + (K-1) × Δt.

  Therefore, in the pixel circuits 21 located in the Kth (K is an integer of 1 or more and N or less) rows, the charges accumulated in the pixel circuit 21 in the period from the reset of the charge amount to the read out of the charge amount. The amount of charge is (1) the charge amount of the charge due to the internal photoelectric effect generated in the exposure period T1 in the photoelectric conversion element 110 in the exposure state, and (2) in the photoelectric conversion element 110 in the light shielding state. 1) It becomes the sum of the charge amount of the charge due to the light shielding leakage, which is generated for the period of × Δt.

  Therefore, with regard to the pixel circuit 21 positioned in the Kth row, the exposure generated in the period of (K-1) × Δt in the photoelectric conversion element 110 in the light blocking state, compared to the pixel circuit 21 positioned in the first row The amount of charge accumulated in excess by the amount of charge due to leakage is read out.

  For this reason, the captured image output from the imaging element 10 is degraded in image quality due to the time difference between the times when reading is started in each row in the array shape (hereinafter this degradation in image quality The image is called “uneven luminance unevenness”.

  Returning to FIG. 1 again, the description of the imaging device 1 will be continued.

  The reducing unit 40 reduces the influence on the output image by the charge generated by the photoelectric conversion member 111 in the light blocking state. More specifically, the reduction unit 40 performs the reduction according to the time difference between the time when the readout circuit 130 executes the readout with the pixel circuit 21 of the first row for each row in the pixel circuit array 120. , By correcting the pixel values of the output image corresponding to the target row.

  That is, in the reduction unit 40, the exposure amount in the charge accumulation period in the pixel circuit 21 positioned in the Kth row of the pixel circuit array 120 is normalized by the exposure amount in the charge accumulation period in the pixel circuit 21 positioned in the first row. In order to reduce the pixel value of the output image output from the imaging device 10, the correction coefficient of 1 or less, which decreases as the time difference increases, is multiplied for each row.

  As a result, when the reduction unit 40 outputs, from the image pickup device 10, an output image in which luminance unevenness occurs due to a difference in readout time, the luminance unevenness is reduced with respect to the output image. to correct.

  Here, for example, for the correction coefficient for each row, a designer who designs the imaging device 1 previously performs an experiment for causing the image pickup device 10 to capture an image for calculating the correction coefficient for each row, By analyzing the captured image, an appropriate value can be determined.

[1-2. Effect etc]
As described above, the imaging device 1 according to the present disclosure can reduce luminance unevenness caused by the difference in readout time.

  Therefore, according to the imaging device 1 according to the present disclosure, it is possible to improve the image quality of an image to be captured as compared with a conventional imaging device that does not reduce luminance unevenness caused by a difference in readout time.

  In the first embodiment, the imaging device 10 is described as reading out the charge amount stored in the pixel circuit 21 in units of rows. However, readout of the charge amount is not necessarily limited to the example performed in units of rows as long as the readout is performed in units of pixel circuit blocks including one or more pixel circuits 21.

Second Embodiment
Here, an imaging device according to the second embodiment in which a part of the functions of the imaging device 1 according to the first embodiment is changed will be described with reference to the drawings.

  The imaging device 1 according to the first embodiment performs the correction for multiplying the pixel value by the correction coefficient for each row with respect to the output image output from the imaging element 10, thereby obtaining the readout time in the output image. This is an example of the configuration to reduce the uneven brightness due to the difference in

  On the other hand, the imaging device 2 according to the second embodiment reads out the amount of charge accumulated in each pixel circuit sequentially from the first row to the Nth row in the pixel circuit array, and vice versa. At the same time, by simultaneously performing reading in order to read one row at a time from the Nth row to the first row in the direction, and combining output images based on the respective readings, uneven brightness due to a difference in reading time in the output image Is an example of a configuration that reduces

  Hereinafter, an imaging apparatus according to the second embodiment will be described with reference to the drawings, focusing on changes from the imaging apparatus 1 according to the first embodiment.

[2-1. Constitution]
FIG. 6 is a block diagram showing the configuration of a camera 600 according to the second embodiment.

  As shown in the figure, the camera 600 is modified such that the imaging device 1 is changed to the imaging device 2 from the camera 200 according to the first embodiment. Then, in the imaging device 2, the imaging device 10 is changed to the imaging device 610 from the imaging device 1 according to the first embodiment, the control unit 20 is changed to the control unit 620, and the reduction unit 40 is changed to the reduction unit 640 It has been transformed to

  Here, the details of the imaging device 610, the control unit 620, and the reduction unit 640 will be described in order.

  Part of the function of the imaging device 610 is changed from the imaging device 10 according to the first embodiment.

  The image pickup element 10 according to the first embodiment is read by reading out the charge amount accumulated in each pixel circuit 21 one by one in order from the first row to the Nth row in the pixel circuit array 120. It is an example of the composition which outputs the output picture which consists of the pixel value based on each of the amount of charge.

  On the other hand, in the image sensor 610 according to the second embodiment, the charge amount stored in each pixel circuit 21 is read out in the forward direction, in order from the first row to the Nth row in the pixel array. In the opposite direction, an output image is formed by pixel values based on the respective charge amounts read in the forward direction, by simultaneously performing the reverse direction readout simultaneously reading out one row at a time from the Nth row to the first row. This is an example of a configuration that outputs a reverse direction output image composed of pixel values based on the respective charge amounts read in the reverse direction.

  FIG. 7 is a block diagram showing the configuration of the imaging device 610.

  As shown in the figure, in the imaging device 610, a reverse direction readout circuit 130B and a reverse direction output circuit 140B are added to the imaging device 10 according to the first embodiment. Then, the pixel circuit 21 is changed to the pixel circuit 21B, the row scanning circuit 150 is changed to the row scanning circuit 150B, and the timing control circuit 160 is changed to the timing control circuit 160B. Further, as the pixel circuit 21 is changed to the pixel circuit 21B, the pixel circuit array 120 is changed to the pixel circuit array 120B.

  FIG. 8 is a block diagram showing the configuration of the pixel circuit 21B.

  As shown in the figure, in the pixel circuit 21B, a selection transistor 24B is added to the pixel circuit 21 according to the first embodiment.

  The selection transistor 24B has a gate connected to the selection signal line 52B, a drain connected to the source of the amplification transistor 23, and a source connected to the vertical signal line 32B.

  The selection transistor 24B is turned on by a selection signal delivered from the row scanning circuit 150B (described later) via the selection signal line 52B, and thereby outputs the current flowing through the amplification transistor 23 to the vertical signal line 32B.

  As in the case of the vertical signal line 32, the amount of current of the current output to the vertical signal line 32B is detected by the column readout circuit 31 included in the backward readout circuit 130B (described later), so that the selection signal is turned on. The amount of charge stored in the charge storage node 25 of the pixel circuit 21B including the selected transistor 24B is read out.

  Returning to FIG. 7 again, the description of the imaging element 610 is continued.

  The row scanning circuit 150B is different from the row scanning circuit 150 according to the first embodiment in part of its function.

  The row scanning circuit 150B is modified to have the following reverse readout pixel circuit selection function in addition to the stored charge amount reset function and the readout pixel circuit selection function of the row scanning circuit 150 according to the first embodiment. It is done.

  In the reverse readout pixel circuit selection function, in the pixel circuit array 120B, the selection transistor 24B in each of the pixel circuits 21B belonging to the corresponding row is turned on at predetermined time intervals Δt in order one row at a time from the Nth row to the first row. The selection signal to be selected is delivered via the selection signal line 52B connected to each of the pixel circuits 21B belonging to the corresponding row.

  Thereby, the readout of the charge amount stored in the charge storage nodes 25 of all the pixel circuits 21B included in the pixel circuit array 120B is performed in units of rows from the Nth row to the first row by the reverse direction readout circuit 130B (described later). After the readout of the pixel circuits 21 belonging to the Nth row is started, the period of N × Δt is required until the readout of the pixel circuits 21B belonging to the first row is completed.

  The reverse reading circuit 130 B has the same configuration as the reading circuit 130. However, in the readout circuit 130, each column readout circuit 31 included is connected to the vertical signal line 32 connected to each of the pixel circuits 21B belonging to the corresponding column, while in the reverse readout circuit 130B, The difference is that each column readout circuit 31 included is connected to the vertical signal line 32B connected to each of the pixel circuits 21B belonging to the corresponding column.

  The reverse direction output circuit 140 B has the same configuration as the output circuit 140. However, while the output circuit 140 outputs an output image composed of pixel values based on each of the charge amounts read by the read out circuit 130, the reverse direction output circuit 140B reads out by the reverse read out circuit 130B. The difference is that a backward output image composed of pixel values based on each of the charge amounts is output.

  The timing control circuit 160B is different from the timing control circuit 160 according to the first embodiment in part of its function.

  The timing control circuit 160B controls the operation timing of the row scanning circuit 150B, the operation timing of the reading circuit 130, the operation timing of the reverse reading circuit 130B, and the operation timing of the voltage application circuit 170. That is, the timing control circuit 160 controls the timing at which the row scanning circuit 150B performs the stored charge amount reset function, the timing at which the readout pixel circuit selection function is performed, and the timing at which the reverse readout pixel circuit selection function is performed. Control timing for reading out the amount of charge stored in the charge storage node 25 of the pixel circuit 21 selected by the selection signal by the readout circuit 130, and the pixel selected by the selection signal by the backward readout circuit 130B. The timing for reading out the amount of charge stored in the charge storage node 25 of the circuit 21 is controlled, and the timing for setting the photoelectric conversion element 110 in the exposure state and the timing for setting the photoelectric conversion element 110 in the light shielding state by the voltage application circuit 170 And control.

  Referring back to FIG. 6 again, the description of the imaging device 1 will be continued.

  The control unit 620 has some of its functions changed from the control unit 20 according to the first embodiment.

  The control unit 20 according to the first embodiment is an example of a configuration having an imaging control function.

  On the other hand, the control unit 620 is an example of a configuration having an imaging control function B.

  The imaging control function B is a function that causes the imaging element 610 to capture an image and output an output image and a reverse direction output image. More specifically, the imaging start signal is output to the imaging element 610 at the timing to start imaging, and the imaging end signal is output at the timing when a predetermined exposure period T1 has elapsed since the imaging start signal is output. This is a function that causes the imaging element 610 to capture the image.

  FIG. 9A is a timing diagram of an imaging start signal and an imaging end signal output by the control unit 620.

  As shown in FIG. 9A, the control unit 620 causes the imaging element 610 to delay the imaging start signal and the imaging end signal by the exposure period T1 of the output of the imaging end signal rather than the output of the imaging start signal. Output as you do.

  When the imaging element 610 receives the imaging start signal output from the control unit 620, the timing control circuit 160B controls (1) the operation timing of the voltage application circuit 170 to perform photoelectric conversion at the timing when the imaging start signal is received. The voltage applied to the member 111 is a first voltage within a first predetermined range, and (2) the operation timing of the row scanning circuit 150B is controlled to receive the imaging start signal, the amount of charge accumulated in the row scanning circuit 150B Execute reset function.

  Then, when the imaging element 610 receives the imaging end signal output from the control unit 620, the timing control circuit 160B controls the operation timing of (1) the voltage application circuit 170 and at the timing when the imaging start signal is received, The voltage applied to the photoelectric conversion member 111 is a second voltage within the second range, and (2) the operation timing of the row scanning circuit 150B, the operation timing of the readout circuit 130, and the operation timing of the reverse readout circuit 130B (A) Rows from the first row to the N-th row of the charge amount stored in the charge storage node 25 with respect to all the pixel circuits 21B configuring the pixel circuit array 120B at the timing of receiving the imaging end signal by control. Forward read-out to be read at timings delayed by Δt in order in units, (B) Delayed by Δt each from the Nth row to the first row Start reading in the reverse direction at timing.

  FIG. 9B is a timing chart showing the state of the imaging device 610.

  As illustrated in FIG. 9B, when the imaging element 610 receives the imaging start signal output from the control unit 620, the imaging device 610 receives the charge amount stored in the pixel circuit 21B included in the pixel circuit array 120B at the received timing. Reset (initialize). In addition, the imaging element 610 sets the photoelectric conversion element 110 in the exposure state during the period from the reception of the imaging start signal to the reception of the imaging end signal, and the light reception state in the photoelectric conversion element 110 during the period after receiving the imaging end signal. I assume. Then, when the imaging element 610 receives an imaging end signal, the charge amount stored in the pixel circuit 21B included in the pixel circuit array 120B is sequentially delayed by .DELTA.t from the first row to the N-th row in order by row units. Readout forward readout and reverse readout for reading out the charge amount stored in the pixel circuit 21B included in the pixel circuit array 120B are performed at a timing delayed by Δt in order from the Nth row to the first row by Δt.

  As understood from FIG. 9B, in the forward reading, as in the case of the first embodiment, for the pixel circuit 21B located in the K-th row, the pixel circuit 21B of the first row, that is, the row to be read first. Compared to the above, the charge amount accumulated in the light shielding state of the photoelectric conversion element 110 in the (K−1) × Δt period by the charge amount of the charge due to the light shielding leakage is read out.

  On the other hand, in the backward reading, the pixel circuit 21B located in the K-th row is compared with the pixel circuit 21B in the N-th row, that is, the first read row in the photoelectric conversion element 110 in the light blocking state (N−K) The amount of charge accumulated in excess of the amount of charge of the charge due to the light-shielding leak generated in the period of × Δt is read out.

  Therefore, both the output image and the reverse direction output image output from the imaging element 610 become an image in which uneven brightness occurs due to the difference between the read times.

  FIG. 10 shows an extra light blocking leakage period in each row based on the first row read in the forward direction, and each row in the reverse direction based on the first row read in the reverse direction. It is a figure which shows the relationship with the period of the excess light-shielding leak.

  As shown in the figure, by adding the extra light blocking leakage period in the forward direction reading and the extra light blocking leakage period in the reverse direction reading in each row, the extra light blocking in the forward direction reading in each row is added. It is possible to offset the difference in the duration of the leak and the difference in the duration of the extra blocking leakage in the reverse reading. That is, by adding the period of the extra light shielding leakage in the forward direction reading and the period of the extra light shielding leakage in the reverse direction reading in each row, the sum of these periods is N-1 in any row It can be x Δt.

  Referring back to FIG. 6 again, the description of the imaging device 2 will be continued.

  The reducing unit 640 is different from the reducing unit 40 according to the first embodiment in part of its function.

  The reducing unit 640 reduces the influence on the output image by the charge generated by the photoelectric conversion member 111 in the light blocking state. More specifically, the reduction unit 640 performs the reduction by combining the output image with the reverse output image.

  That is, the reduction unit 640 performs an averaging of each pixel value of the output image with the pixel value of the corresponding backward output image, and is referred to as a new output image (hereinafter, referred to as a "brightness non-uniformity reduced image". Generate).

  As can be seen from FIG. 10, in this luminance unevenness reduced image, there is no difference in the excess exposure leakage period in the amount of charge read out from the corresponding pixel circuit 21B for any row of pixels.

  For this reason, this brightness non-uniformity reduced image is an image in which the brightness non-uniformity due to the difference between the read times is reduced compared to the output image.

  As described above, when the reduction unit 640 outputs, from the imaging element 610, an output image in which luminance unevenness occurs due to a difference in readout time, the luminance unevenness is reduced with respect to the output image. Output a reduced image.

[2-2. Effect etc]
As described above, the imaging device 2 according to the present disclosure can reduce luminance unevenness caused by the difference in readout time.

  Therefore, according to the imaging device 2 according to the present disclosure, it is possible to improve the image quality of an image to be captured as compared with a conventional imaging device that does not reduce luminance unevenness caused by a difference in readout time.

  In the second embodiment, the imaging device 610 is described as performing readout of the charge amount stored in the pixel circuit 21B in units of rows. However, readout of the charge amount is not necessarily limited to the example performed in units of rows as long as the readout is performed in units of pixel circuit blocks including one or more pixel circuits 21B.

Third Embodiment
Here, an imaging apparatus according to the third embodiment in which some of the functions of the imaging apparatus 1 according to the first embodiment are changed will be described with reference to the drawings.

  After the output image is output from the imaging element 10, the imaging device 1 according to Embodiment 1 performs arithmetic processing on the output image to obtain the luminance due to the difference in the readout time in the output image. It was an example of the composition which reduces unevenness.

  On the other hand, in the image pickup device according to the third embodiment, the amount of light collected on the image pickup element during the period in which the charge amount accumulated in each pixel circuit is read out in the image pickup element. By narrowing the aperture to be adjusted, an example of the configuration that reduces the occurrence of uneven brightness due to the difference between the read times in the captured image to be output from now will be described.

  Hereinafter, an imaging apparatus according to the third embodiment will be described with reference to the drawings, focusing on changes from the imaging apparatus 1 according to the first embodiment.

[3-1. Constitution]
FIG. 11 is a block diagram showing the configuration of a camera 1100 according to the third embodiment.

  As shown in the figure, the camera 1100 is modified such that the imaging device 1 is changed to the imaging device 3 from the camera 200 according to the first embodiment. Then, in the imaging device 3, the control unit 20 is changed to the control unit 1120 and the reduction unit 40 is changed to the reduction unit 1140 in the imaging device 1 according to the first embodiment.

  Here, the details of the control unit 1120 and the reduction unit 1140 will be described in order.

  The control unit 1120 is different from the control unit 20 according to the first embodiment in part of its function.

  The control unit 20 according to the first embodiment is an example of a configuration having an imaging control function.

  On the other hand, the control unit 1120 is an example of a configuration having an imaging control function C.

  The image pickup control function C causes the image pickup device 10 to pick up an image and output an output image, and at the same time the user uses the image pickup device 3 for the amount of aperture of the aperture 214 while the photoelectric conversion member 111 is in the exposure state. Is a function to make the desired squeeze amount of. More specifically, (1) the imaging start signal is output to the imaging element 10 at the timing to start imaging, the imaging start signal is output, and the imaging ends at the timing when a predetermined exposure period T1 has elapsed. A signal is output to cause the imaging element 10 to capture the image, and (2) an aperture amount indicating the aperture amount desired by the user at the timing when the imaging start signal is output to the lens driving unit 220. By outputting the designation signal, it is a function to make the aperture amount of the aperture 214 the aperture amount desired by the user.

  The reducing unit 1140 is different from the reducing unit 40 according to the first embodiment in part of its function.

  When the imaging end signal is output from the control unit 1120, the reduction unit 1140 sets the aperture of the aperture 214 as the maximum aperture. More specifically, when the imaging end signal is output from the control unit 1120, the aperture stop 214 is output by outputting a maximum aperture amount signal indicating that the aperture amount is the maximum aperture amount. The squeezing amount of the lens is the maximum squeezing amount.

  12A is a timing diagram of an imaging start signal and an imaging end signal output by the control unit 620, FIG. 12B is a timing diagram of an aperture amount designation signal output by the control unit 620, and FIG. FIG. 16 is a timing diagram of a maximum aperture amount signal output by a reduction unit 1140.

  As illustrated in FIG. 12A, the control unit 620 causes the imaging element 10 to delay the output of the imaging end signal by the exposure period T1 rather than the output of the imaging start signal and the imaging start signal. Output as you do. Further, as shown in FIG. 12B, the control unit 620 outputs an aperture amount designation signal to the lens drive unit 220 at the timing of outputting an imaging start signal. Then, as illustrated in FIG. 12C, when the imaging end signal is output from the control unit 620, the reduction unit 1140 outputs a maximum aperture amount signal to the lens driving unit 220.

  FIG. 12D is a timing chart showing the state of the aperture 214.

  As shown in FIG. 12D, the aperture 214 is a period from when the lens drive unit 220 receives the aperture amount designation signal until the lens drive unit 220 receives the maximum aperture amount signal, and the aperture amount is the aperture amount designation signal. In the period after the maximum aperture signal is received, the aperture amount is set to the maximum aperture amount.

  FIG. 12E is a timing chart showing the state of the imaging device 10.

  As illustrated in FIG. 12E, as in the case described in FIG. 5B according to the first embodiment, a period from when the imaging device 10 receives an imaging start signal to when it receives an imaging completion signal, as illustrated in FIG. The photoelectric conversion element 110 is in the exposure state, and the photoelectric conversion element 110 is in the light shielding state during a period after receiving the imaging end signal. Then, when the imaging element 10 receives the imaging end signal, the imaging element 10 delays the amount of charge stored in the pixel circuit 21 included in the pixel circuit array 120 at a timing delayed by Δt in order from the first row to the Nth row by row. Read it out.

  As shown in FIGS. 12D and 12E, while the image sensor 10 is reading out the charge amount, the aperture 214 sets the aperture amount to the maximum aperture amount.

Thus, in the imaging device 10, the amount of external light collected on the photoelectric conversion member 111 can be minimized while reading out the charge amount.
For this reason, in the imaging device 3, the luminance unevenness due to the difference in the reading time is reduced as compared to the conventional imaging device in which the aperture amount of the aperture is not set to the maximum aperture amount while reading the charge amount. Images can be output.

[3-2. Effect etc]
As described above, the imaging device 3 according to the present disclosure can reduce luminance unevenness caused by the difference in readout time.

  Therefore, according to the imaging device 3 according to the present disclosure, it is possible to improve the image quality of an image to be captured as compared with a conventional imaging device that does not reduce luminance unevenness caused by a difference in readout time.

  In the third embodiment, the reduction unit 1140 is described as setting the aperture amount of the aperture 214 as the maximum aperture amount when the imaging end signal is output from the control unit 1120. However, the above-described aperture amount is not necessarily limited to the example having the maximum aperture amount as long as the aperture amount is larger than the aperture amount indicated by the aperture amount specifying signal.

Embodiment 4
Here, an imaging apparatus according to the fourth embodiment in which some of the functions of the imaging apparatus 3 according to the third embodiment are changed will be described with reference to the drawings.

  The imaging apparatus according to the fourth embodiment performs the apodization imaging with the apodization effect by increasing the aperture amount of the aperture during the exposure period. Then, in the imaging device according to the fourth embodiment, the photoelectric conversion efficiency in the photoelectric conversion member is compensated so as to compensate for the decrease in light amount due to the increase in the aperture amount during the period in which the aperture amount is increased in the apodization imaging. I will increase it.

  Hereinafter, the imaging device according to the fourth embodiment will be described with reference to the drawings, focusing on the changes from the imaging device 3 according to the third embodiment.

[4-1. Constitution]
FIG. 13 is a block diagram showing the configuration of a camera 1300 according to the fourth embodiment.

  As shown in the figure, the camera 1300 is modified such that the imaging device 3 is changed to the imaging device 4 from the camera 1100 according to the third embodiment. Then, in the imaging device 4, the reduction unit 1140 is deleted from the imaging device 3 according to the third embodiment, the voltage control unit 1340 is added, the imaging device 10 is changed to the imaging device 1310, and the control unit 1120 is a control unit It has been changed to 1320.

  Here, the details of the imaging device 1310, the control unit 1320, and the voltage control unit 1340 will be described in order.

  Part of the function of the imaging device 1310 is changed from the imaging device 10 according to the third embodiment.

  FIG. 14 is a block diagram showing the configuration of the imaging device 1310.

  As shown in the figure, in the imaging device 1310, a timing control circuit 160 is changed to a timing control circuit 160C, as compared with the imaging device 10 according to the third embodiment.

  The timing control circuit 160C is different from the timing control circuit 160 according to the third embodiment in part of its function.

  The timing control circuit 160C has the following arbitrary voltage application function in addition to the function of the timing control circuit 160 according to the third embodiment.

  The arbitrary voltage application function is a function of controlling the voltage application circuit 170 to cause the voltage application circuit 170 to dynamically apply an arbitrary voltage within the first predetermined range to the photoelectric conversion member 111.

  Returning to FIG. 13 again, the description of the imaging device 4 will be continued.

  The control unit 1320 is different from the control unit 1120 according to the third embodiment in part of its function.

  The control unit 1120 according to the third embodiment is an example of a configuration having the imaging control function C.

  On the other hand, the control unit 1320 is an example of a configuration having an apodization imaging control function.

  The apodization imaging control function causes the imaging element 1310 to capture an image and output an output image, and at the same time, the aperture desired by the user using the imaging device 3 while the photoelectric conversion member 111 is in the exposure state The predetermined amount of light of the external light collected on the photoelectric conversion member 111 is a predetermined ratio A (where A is a number less than 1 and less than 1, for example, 1/2 in this case) from the aperture amount of 214 It is a function to increase the stop amount of the aperture 214 so as to decrease linearly over the exposure period T1. More specifically, (1) the imaging start signal is output to the imaging element 1310 at the timing to start imaging, the imaging start signal is output, and the imaging ends at the timing when a predetermined exposure period T1 has elapsed. A signal is output to cause the imaging element 10 to capture the image, and (2) an aperture amount indicating the aperture amount desired by the user at the timing when the imaging start signal is output to the lens driving unit 220. By outputting the designation signal B, it is a function that causes the aperture 214 to increase the aperture amount.

  The voltage control unit 1340 controls the voltage applied to the photoelectric conversion member 111.

  Here, when the photoelectric conversion member 111 is in the exposure state, the voltage control unit 1340 applies a voltage to the photoelectric conversion member 111 according to the change when the stop amount of the diaphragm 214 increases so as to increase. The above control is performed to be increased. More specifically, when the diaphragm amount designation signal B is output from the control unit 1320, the voltage control unit 1340 applies the first voltage to the imaging element 1310 with the photoelectric conversion efficiency of the photoelectric conversion member 111. The applied voltage change signal for increasing the voltage applied to the photoelectric conversion member 111 so as to increase linearly over a predetermined exposure period T1 until the predetermined ratio becomes 1 / A times from the photoelectric conversion efficiency The above control is performed by outputting. Voltage control unit 1340 is implemented, for example, by a processor (not shown) executing a program stored in a memory (not shown).

  FIG. 15A is a timing diagram of the imaging start signal and the imaging end signal output by the control unit 1320, FIG. 15B is a timing diagram of the aperture amount designation signal B output by the control unit 1320, and FIG. 11 is a timing diagram of an applied voltage change signal output by the voltage control unit 1340.

  As illustrated in FIG. 15A, the control unit 1320 delays the imaging start signal and the imaging end signal with respect to the imaging element 1310, and the output of the imaging end signal is delayed by the exposure period T1 rather than the output of the imaging start signal. Output as you do. Further, as illustrated in FIG. 15B, the control unit 1320 outputs the aperture amount designation signal B to the lens driving unit 220 at the timing of outputting the imaging start signal. Then, as shown in FIG. 15C, the voltage control unit 1340 outputs an application voltage change signal to the imaging element 1310 at the timing when the aperture amount designation signal B is output.

  When the diaphragm amount designation signal B is output from the control unit 1320, the diaphragm amount of the diaphragm 214 is collected on the photoelectric conversion member 111 over the predetermined exposure period T1 from the diaphragm amount indicated by the diaphragm amount designation signal B. The stop amount is changed so that the light amount of the external light to be emitted decreases linearly until it becomes a predetermined ratio A times.

  FIG. 15D is a timing diagram of the light quantity of the external light collected on the photoelectric conversion member 111.

  As shown in FIG. 15D, as a result of the aperture 214 executing the change of the aperture amount, the light intensity of the external light condensed on the photoelectric conversion member 111 is from the start of the exposure period T1 to the end of the exposure period T1. Then, from the light amount at the user's desired aperture amount, it decreases linearly until it becomes the predetermined ratio A times.

  When the imaging device 1310 receives the applied voltage change signal output from the voltage control unit 1340, the timing control circuit 160C controls the operation timing of the voltage application circuit 170 to receive the applied voltage change signal, thereby performing photoelectric conversion. The voltage applied to the conversion member 111 is a first voltage within a first predetermined range. After that, the voltage applied to the photoelectric conversion member 111 is increased within a first predetermined range so that the photoelectric conversion efficiency of the photoelectric conversion member 111 linearly increases to a predetermined ratio 1 / A over the exposure period T1. .

  FIG. 15E is a timing chart of voltages applied to the photoelectric conversion member 111, and FIG. 15F is a timing chart of photoelectric conversion efficiency in the photoelectric conversion member 111.

  As shown in FIG. 15F, as a result of changing the voltage applied to the photoelectric conversion member 111 by the voltage application circuit 170, the photoelectric conversion efficiency of the photoelectric conversion member 111 is from the start of the exposure period T1 to the end of the exposure period. From the photoelectric conversion efficiency to which the first voltage is applied, the voltage linearly increases until the predetermined ratio becomes 1 / A.

  As described above, when the imaging device 4 performs apodization imaging, as illustrated in FIG. 15D, the light amount in the exposure period is A times that of the light amount at the aperture amount desired by the user (here, For example, the light quantity is reduced to 1⁄2).

  On the other hand, when the imaging device 4 performs apodization imaging, as shown in FIG. 15F, the photoelectric conversion efficiency of the photoelectric conversion member 111 is determined by the photoelectric conversion efficiency to which the first voltage is applied. The ratio linearly increases until it becomes a predetermined ratio 1 / A.

  Thus, the imaging device 4 can compensate for the decrease in light amount in the apodization imaging by the increase in the photoelectric conversion efficiency of the photoelectric conversion member 111.

  For this reason, the imaging device 4 reduces deterioration in the image quality of the captured image due to lack of light amount in the apodization imaging as compared to the conventional imaging device in which the photoelectric efficiency of the photoelectric conversion member is not increased in apodization imaging. Can.

[4-2. Effect etc]
As described above, the imaging device 4 according to the present disclosure can reduce degradation of a captured image due to lack of light amount in apodization imaging.

  Therefore, according to the imaging device 4 according to the present disclosure, it is possible to improve the image quality of an image to be captured as compared with a conventional imaging device that does not reduce deterioration of a captured image due to lack of light amount in apodization imaging.

Fifth Embodiment
Here, an imaging apparatus according to the fifth embodiment in which some of the functions of the imaging apparatus 1 according to the first embodiment are changed will be described with reference to the drawings.

  Like the imaging device 1 according to the first embodiment, the imaging device according to the fifth embodiment sequentially reads out the charge amount stored in the pixel circuit in units of rows in the pixel circuit array. On the other hand, the imaging device according to the fifth embodiment adjusts the difference in luminance in the output image on a row basis by positively setting the photoelectric conversion member in the exposure state during the readout period.

  Hereinafter, the imaging device according to the fifth embodiment will be described with reference to the drawings, focusing on the changes from the imaging device 1 according to the first embodiment.

[5-1. Constitution]
FIG. 16 is a block diagram showing the configuration of a camera 1600 according to the fifth embodiment.

  As shown in the figure, the camera 1600 is modified such that the imaging device 1 is changed to the imaging device 5 from the camera 200 according to the first embodiment. Then, in the imaging device 5, the reduction unit 40 is deleted from the imaging device 1 according to the first embodiment, the imaging device 10 is changed to the imaging device 1310, the control unit 20 is changed to the control unit 1620, and a voltage control unit 1640 and an acquisition unit 1650 are added.

  The imaging device 1310 has already been described in the fourth embodiment. Therefore, details of the control unit 1620, the acquisition unit 1650, and the voltage control unit 1640 will be sequentially described here.

  The control unit 1620 is different from the control unit 20 according to the first embodiment in part of its function.

  The control unit 1620 has the following live view imaging function in addition to the imaging control function of the control unit 20 according to the first embodiment.

  The live view imaging function is a function that causes the imaging element 10 to capture an image at a predetermined cycle (for example, one second) and output an output image. More specifically, the control unit 1620 implements this live view imaging function by executing the imaging control function at a predetermined cycle.

  The acquiring unit 1650 is an array of the pixel circuit array 120 in an estimated charge amount indicating an amount of charge estimated to be accumulated in each of the plurality of pixel circuits 21 at the time when the read out circuit 130 starts reading. Acquire information related to the first distribution.

  Here, the acquisition unit 1650 is an output image (hereinafter, referred to as a “live view image”) output from the imaging device 1310 during the period in which the control unit 1620 is executing the live view imaging function as the above information. To get The acquiring unit 1650 is realized, for example, by a processor (not shown) executing a program stored in a memory (not shown).

  The voltage control unit 1640 controls the voltage applied to the photoelectric conversion member 111.

  Here, the voltage control unit 1640 sets the first predetermined range in the photoelectric conversion member 111 in at least a part of a period from the start time point to the end time point of the read out by the read out circuit 130 (hereinafter referred to as “additional exposure period”). The voltage applied to the photoelectric conversion member 111 is controlled so that the voltage of

  As a result, in the pixel circuits 21 of the row in which the readout is not yet completed in the additional exposure period, the charges due to the internal photoelectric effect generated by the photoelectric conversion member 111 in the additional exposure period are further accumulated It will be done.

  Here, based on the live view image acquired by the acquisition unit 1650, the voltage control unit 1640 detects pixels of the charge amount read out by the readout circuit 130 rather than the distribution (first distribution) of luminance in the live view image. The voltage applied to the photoelectric conversion member 111 is controlled so that the distribution in the array shape of the circuit array 120 has a flatter distribution.

  More specifically, of the live view images acquired by (1) acquisition unit 1650, voltage control unit 1640 is the last acquired live view image (hereinafter referred to as "reference live view image"). The sum of the pixel values for each row is calculated, and (2) the voltage applied to the photoelectric conversion member 111 is controlled so that the variation in the sum of the pixel values for each row is reduced. Voltage control unit 1640 is implemented, for example, by a processor (not shown) executing a program stored in a memory (not shown).

  Hereinafter, the operation performed by the voltage control unit 1640 will be described with reference to the drawings using a specific example.

  FIG. 17 is a specific example of the reference live view image. Here, the reference live view image is described as an image in which the sun appears above the image and the shade of the tree appears below the image.

  The voltage control unit 1640 calculates a sum of pixel values for each row in the live view image. In the case of this example, the sum of the pixel values of the portion of the upper l row where the sun appears is significantly larger than the average of the sum of the pixel values for each row (that is, the luminance is large) The sum of the pixel values of the m row portion is significantly smaller (i.e., smaller in luminance) than the average of the sum of the pixel values in each row.

  Therefore, in the case of this example, when the imaging device 1310 captures a new image, for example, the voltage control unit 1640 is configured to have a flatter distribution of luminance in the new image. The voltage applied to the photoelectric conversion member 111 is controlled so that the additional exposure period is included in the period up to the readout only for the pixel circuits 21 located in the lower m row portions which become smaller.

  FIG. 18A is a timing chart showing a state of the imaging device 1310 when the imaging device 1310 captures a new image in this one specific example, and FIG. 18B is a timing chart showing the imaging device 1310 is new in this one specific example. 15 is a timing chart of voltages applied to the photoelectric conversion member 111 in the case of capturing an odd image.

  As shown in FIG. 18A and FIG. 18B, the voltage control unit 1640 controls the photoelectric conversion member 111 in a period from when the reading of the lower m-1th row is finished to when the reading of the lowermost row is finished. The voltage applied to the photoelectric conversion member 111 is controlled so that the third voltage in one predetermined range is applied.

  Returning to FIG. 16 again, the description of the imaging device 5 will be continued.

  The voltage control unit 1640 controls the voltage applied to the photoelectric conversion member 111 by outputting an applied voltage value signal indicating the value of the voltage to be applied to the photoelectric conversion member 111 to the imaging element 1310. .

  FIG. 19A is a timing diagram of an imaging start signal and an imaging end signal output by the control unit 1620, and FIG. 19B is a timing diagram of an applied voltage value signal output by the voltage control unit 1640.

  As shown in FIG. 19A, the control unit 1620 delays the imaging start signal and the imaging end signal for the imaging element 1310, and the output of the imaging end signal is delayed by the exposure period T1 rather than the output of the imaging start signal. Output as you do.

  On the other hand, based on the reference live view image, voltage control unit 1640 determines the distribution of the charge amount read by readout circuit 130 in the array shape of pixel circuit array 120 rather than the luminance distribution in the reference live view image. Of the additional exposure period T2 and the third voltage of the first predetermined range to be applied to the photoelectric conversion member 111 in the additional exposure period T2 so as to obtain a more even distribution. calculate.

  Then, as shown in FIG. 19B, the voltage control unit 1640 outputs an applied voltage value signal indicating the calculated third voltage from the calculated start time of the additional exposure period T2 to the calculated end time of the additional exposure period T2. Output.

  FIG. 19C is a timing chart showing the state of the imaging device 1310, and FIG. 19D is a timing chart of the voltage applied to the photoelectric conversion member 111.

  As illustrated in FIGS. 19C and 19D, when the imaging device 1310 receives the imaging start signal output from the control unit 1620, the imaging device 1310 is stored in the pixel circuit 21 included in the pixel circuit array 120 at the received timing. Reset (initialize) the amount of charge. In addition, the imaging element 1310 applies the first voltage to the photoelectric conversion member 111 during the period from the reception of the imaging start signal to the reception of the imaging end signal, thereby bringing the photoelectric conversion element 110 into the exposure state. Then, when the imaging element 1310 receives an imaging end signal, the imaging element 1310 delays the amount of charge stored in the pixel circuit 21 included in the pixel circuit array 120 at a timing delayed by Δt in order from the first row to the Nth row. Read it out. On the other hand, when receiving the applied voltage value signal, the imaging device 1310 applies a third voltage indicated by the applied voltage signal to the photoelectric conversion member 111 during a period in which the applied voltage value signal is received. The conversion member 111 is in the exposure state.

  As described above, while the imaging device 5 sequentially reads out the charge amount stored in the pixel circuit 21 in row units in the pixel circuit array 120, the distribution of the luminance in the output image is obtained during the readout period. The photoelectric conversion member 111 is positively brought into the exposure state so as to have a more even distribution.

  Thus, the imaging device 5 can adjust the difference in luminance in units of rows so that the difference in luminance in the output image is reduced.

  In FIG. 19D, although it is described that the third voltage is lower than the first voltage, the third voltage is necessarily a voltage lower than the first voltage if it is a voltage within the first predetermined range. The case is not limited. For example, the third voltage may be higher than or the same as the first voltage. Furthermore, for example, the third voltage may dynamically change in the first predetermined range.

  In FIG. 19D, although it is described that the additional exposure period T2 is located in the latter half of the readout period, the additional exposure period T2 is necessarily located in the latter half of the readout period within the readout period. It is not limited to. For example, the additional exposure period T2 may be located in the first half of the readout period, or may be located in the entire readout period. Furthermore, for example, the additional exposure period T2 may be divided into a plurality of non-consecutive periods.

5-2. Effect etc]
As described above, the imaging device 5 according to the present disclosure can adjust the difference in luminance on a row basis so that the difference in luminance in the output image is reduced.

  Therefore, according to the imaging device 5 according to the present disclosure, the image quality of an image to be captured is higher than that of a conventional imaging device in which the difference in luminance can not be adjusted in units of rows so as to reduce the difference in luminance It is possible to improve the

  In the fifth embodiment, it has been described that the imaging device 1310 reads out the charge amount stored in the pixel circuit 21 in units of rows. However, readout of the charge amount is not necessarily limited to the example performed in units of rows as long as the readout is performed in units of pixel circuit blocks including one or more pixel circuits 21.

(Supplement)
As described above, Embodiments 1 to 5 have been described as an example of the technology disclosed in the present application. However, the technology in the present disclosure is not limited to these, and can be applied to embodiments in which changes, replacements, additions, omissions, and the like are appropriately made.

  (1) In the first embodiment, the imaging device 1 generates a charge due to the internal photoelectric effect by the photoelectric conversion member 111 receiving light in the state where the voltage of the first predetermined range is applied, and It has been described that the organic thin film has a function of not generating a charge due to the internal photoelectric effect even when light is received in a state where a voltage is applied.

  However, the photoelectric conversion member 111 is not necessarily limited to the organic thin film as long as the member can control the presence or absence of charge generation due to the internal photoelectric effect by the applied voltage. As an example, in the imaging device 1, an example in which the photoelectric conversion member 111 is a diode having a PN junction surface can be considered.

  (2) In the first embodiment, the predetermined exposure period T1 has been described as being a predetermined predetermined period.

  On the other hand, the exposure period T1 may not be a predetermined predetermined period, and may be set by, for example, a user who uses the imaging device 1.

  Further, in the fourth embodiment, the predetermined ratio A is described as being a predetermined predetermined ratio.

  On the other hand, the ratio A may not be a predetermined ratio set in advance, and may be set by, for example, a user who uses the imaging device 4.

  (3) In the fourth embodiment, the predetermined ratio A is described as A is a number less than one. However, the present invention is not necessarily limited to the case where A is a number less than one, and an example may be considered where A is a number larger than one.

  In this case, the aperture amount of the aperture 214 is increased so that the light amount of the external light collected on the photoelectric conversion member 111 linearly increases to A times over the exposure time T1, and the photoelectric conversion member The voltage applied to the photoelectric conversion member 111 is decreased within the first predetermined range so that the photoelectric conversion efficiency at 111 linearly decreases to 1 / A times over the exposure period T1.

  (4) It goes without saying that the present disclosure also includes electronic devices in which the imaging devices 1 to 5 in Embodiments 1 to 5 are incorporated.

  Such an electronic device is realized, for example, as a digital still camera shown in FIG. 20A or a video camera shown in FIG. 20B.

  (5) In the embodiment, as shown in FIG. 1, the imaging device 1 has been described as being configured separately from the optical system 210. However, the imaging device 1 is not necessarily limited to the configuration separate from the optical system 210. For example, the imaging device 1 may be a camera with a lens including the optical system 210 and the lens driving unit 220.

  (6) Each component (functional block) in the imaging device 1 to the imaging device 5 may be individually made into one chip by a semiconductor device such as an integrated circuit (IC) or a large scale integration (LSI), or a part thereof It may be made into one chip so as to include all or all. Further, the method of circuit integration is not limited to LSI's, and implementation using dedicated circuitry or general purpose processors is also possible. After the LSI is manufactured, a programmable field programmable gate array (FPGA) may be used, or a reconfigurable processor that can reconfigure connection and setting of circuit cells in the LSI may be used. Furthermore, if integrated circuit technology comes out to replace LSI's as a result of the advancement of semiconductor technology or a derivative other technology, it is possible to carry out function block integration using this technology. Application of biotechnology etc. may be possible.

  In addition, all or part of the various processes may be realized by hardware such as an electronic circuit or may be realized using software. The processing by software is realized by the processor included in the imaging device 1 executing a program stored in the memory. Also, the program may be recorded on a recording medium and distributed or distributed. For example, by installing the distributed program in a device having another processor and causing the processor to execute the program, it is possible to cause the device to perform each of the above processes.

  In addition, a form realized by arbitrarily combining the components and the functions described in the above-described embodiments is also included in the scope of the present disclosure.

  (7) The imaging device 1 according to an aspect of the present disclosure includes the photoelectric conversion member 111 that generates charges by the internal photoelectric effect by receiving light in the exposure state in which the voltage in the first predetermined range is applied. And a readout circuit 130 for reading out the amount of charge accumulated in each of the plurality of pixel circuits 21, and the amount of charge read out by the readout circuit 130. The output image by the charge generated by the imaging device 10 including the output circuit 140 for outputting an output image composed of pixel values based on each and the photoelectric conversion member 111 in the light blocking state to which the voltage of the second predetermined range is applied. And a reducing unit 40 for reducing the influence on the vehicle.

  The imaging device 1 reduces the influence on the output image by the charge generated by the photoelectric conversion member 111 in the light blocking state. For this reason, according to this imaging device 1, the image quality in the image to image | photograph can be improved with respect to the image quality in the image imaged by the conventional imaging device.

  Also, for example, the readout circuit 130 performs the readout from the first to Nth pixel circuit blocks in a pixel circuit block unit including one or more pixel circuits 21 in a period in which the photoelectric conversion member 111 is in the light blocking state. Is performed sequentially to the pixel circuit block of 2 or more, and the reduction unit 40 performs the reduction on the readout circuit 130 of the pixel circuit 21 of the first pixel circuit block for each pixel circuit block. According to the time difference of the time when the readout by the above is executed, the pixel value of the output image corresponding to the target pixel circuit block may be corrected.

  Thereby, the imaging device 1 can reduce the deterioration of the image quality due to the time difference of the time when the readout is performed in each pixel circuit block.

  Also, for example, the reduction unit 40 reduces the correction with respect to each pixel circuit block, with respect to the pixel value of the output image corresponding to the target pixel circuit block, as the time difference becomes larger as the time difference becomes larger. The correction coefficient may be multiplied by one or less.

  As a result, the imaging device 1 can realize the reduction of the deterioration of the image quality due to the time difference of the time when the readout is performed in each pixel circuit block by a relatively easy operation.

  Also, for example, the readout circuit 130 performs the readout from the first to Nth pixel circuit blocks in a pixel circuit block unit including one or more pixel circuits 21 in a period in which the photoelectric conversion member 111 is in the light blocking state. Is performed in order to an integer of 2 or more) pixel circuit block, and further, during the period in which the photoelectric conversion member 111 is in the light shielding state, the Nth pixel circuit block to the first pixel in the pixel circuit block unit. A reverse direction readout circuit 130B for reading out the charge amount stored in each of the plurality of pixel circuits 21 in order to the circuit block, and a reverse direction consisting of pixel values based on the charge amount read out by the reverse direction readout circuit 130B. And a reverse direction output circuit 140B for outputting an output image, wherein the reduction unit 40 performs the reduction on the output image. It may perform by combining direction output image.

  Thereby, the imaging device 1 can reduce the deterioration of the image quality due to the time difference of the time when the readout is performed in each pixel circuit block.

  Also, for example, the reduction unit 40 performs a process including the process of adding the pixel value of the reverse output image at a position corresponding to the pixel value to each pixel value of the output image. It may be done by

  As a result, the imaging device 1 can realize the reduction of the deterioration of the image quality due to the time difference of the time when the readout is performed in each pixel circuit block by a relatively easy operation.

  In addition, for example, the photoelectric conversion member 111 further includes a lens that condenses external light, and an aperture 214 that adjusts the amount of light condensed by the lens, and the reduction unit 40 It may be performed by narrowing the aperture 214 for at least a part of the period in which the conversion member 111 is in the light shielding state.

  Thus, the imaging device 1 can reduce the deterioration of the image quality caused by the light collected on the photoelectric conversion member 111 in the light shielding state.

  In addition, for example, in the partial period, when the state of the photoelectric conversion member 111 is changed from the exposure state to the light shielding state, the readout by the readout circuit 130 is first completed after that point of time A period up to the point of time may be included.

  Thereby, the imaging device 1 can reduce the deterioration of the image quality caused by the light condensed on the photoelectric conversion member 111 in the light blocking state in the above period.

  The imaging device 1 according to an aspect of the present disclosure is the photoelectric conversion member 111 that generates a charge due to the internal photoelectric effect by receiving light in an exposure state in which a voltage in a first predetermined range is applied. 1 According to the voltage of a predetermined range, the higher the voltage, the higher the photoelectric conversion efficiency is. The photoelectric conversion member 111 that generates the charge and the charge generated by the photoelectric conversion member 111 are accumulated in pixel units And an output image composed of pixel values based on the charge amounts read out by the read out circuit 130, and the read out circuit 130 reading out the charge amounts stored in each of the plurality of pixel circuits 21 and the plurality of pixel circuits 21. The imaging device 10 includes an output circuit 140 for outputting, and a voltage control unit 1340 for controlling a voltage applied to the photoelectric conversion member 111.

  The imaging device 1 can control the photoelectric conversion efficiency of the photoelectric conversion member 111. For this reason, according to this imaging device 1, the image quality in the image to image | photograph can be improved with respect to the image quality in the image imaged by the conventional imaging device.

  For example, the photoelectric conversion member 111 further includes a lens for condensing external light, and a diaphragm 214 for adjusting the amount of light condensed by the lens, and the voltage control unit 1340 performs the control as When the photoelectric conversion member 111 is in the exposure state, when the stop amount of the diaphragm 214 changes, the voltage applied to the photoelectric conversion member 111 may be changed according to the change.

  As a result, the imaging device 1 can reduce the deterioration of the image quality caused by the change in the aperture amount during imaging.

  Also, for example, when the voltage control unit 1340 changes so that the amount of stop of the aperture 214 increases in the case where the photoelectric conversion member 111 is in the exposure state, the voltage control unit 1340 responds to the change. It may be performed such that the voltage applied to 111 is increased.

  As a result, the imaging device 1 can reduce the deterioration of the image quality caused by the increase in the amount of aperture during imaging.

  Also, for example, the readout circuit 130 performs the readout in order from the first pixel circuit block to the Nth (N is an integer of 2 or more) pixel circuit block in units of pixel circuit blocks including one or more pixel circuits 21. The voltage control unit 1340 performs the control so that the voltage of the first predetermined range is applied to the photoelectric conversion member 111 in at least a part of a period from the start time point to the end time point of the read out by the read out circuit 130. You may do it.

  As a result, the imaging device 1 can realize adjustment of the exposure period in units of pixel circuit blocks.

  Also, for example, in the plurality of pixel circuits 21 of the estimated charge amount indicating the amount of charge estimated to be accumulated in each of the plurality of pixel circuits 21 at the time when the readout circuit 130 starts the readout. The voltage control unit 1340 includes the acquisition unit 1650 that acquires information related to the first distribution, and the voltage control unit 1340 is read by the readout circuit 130 based on the information acquired by the acquisition unit 1650 rather than the first distribution. The distribution of the charge amount in the plurality of pixel circuits 21 may be made to be a flatter distribution.

  Thus, the imaging device 1 can flatten the distribution of luminance in the output image.

  Furthermore, for example, the imaging device 10 may be an organic CMOS image sensor in which an organic thin film is used as the photoelectric conversion member 111.

  Thus, high integration of the imaging device 10 can be realized.

  A camera according to an aspect of the present disclosure includes the imaging device 1 and a lens that condenses external light on the imaging device 10.

  This camera reduces the influence of the charge generated by the photoelectric conversion member 111 in the light blocking state on the output image, or controls the photoelectric conversion efficiency of the photoelectric conversion member 111. Therefore, according to this camera, the image quality of the captured image can be improved relative to the image quality of the image captured by the conventional camera.

  Furthermore, for example, the imaging device 10 may be an organic CMOS image sensor using an organic thin film as the photoelectric conversion member.

  Thus, high integration of the imaging device 10 can be realized.

  An imaging method according to an aspect of the present disclosure is an imaging method performed by the imaging device 1 including the imaging element 10 and the reduction unit 40, and the imaging element 10 is in an exposure state in which a voltage in a first predetermined range is applied. A photoelectric conversion member 111 that generates electric charge by internal photoelectric effect by receiving light, a plurality of pixel circuits 21 that accumulate the electric charge generated by the photoelectric conversion member 111 in pixel units, and a plurality of pixel circuits 21 are accumulated. Reading circuit 130 for reading out the charge amount, and an output circuit 140 for outputting an output image consisting of pixel values based on the respective charge amounts read out by the reading circuit 130, and the output circuit 140 outputs the output image Output step and the charge generated by the photoelectric conversion member 111 in the light blocking state to which the reduction unit 40 applies the voltage of the second predetermined range, And a reduction step to reduce the influence of the serial output image.

  This imaging method reduces the influence on the output image due to the charge generated by the photoelectric conversion member 111 in the light blocking state. Therefore, according to this imaging method, the image quality of the image to be imaged can be improved relative to the image quality of the image imaged by the conventional imaging method.

  The imaging method according to an aspect of the present disclosure is an imaging method performed by the imaging device 1 including the imaging element 10 and the voltage control unit 1340, and the imaging element 10 has an exposure state in which a voltage in a first predetermined range is applied. The photoelectric conversion member 111 generates charges by the internal photoelectric effect by receiving light, and the photoelectric conversion efficiency is higher as the voltage is higher according to the voltage of the first predetermined range to be applied. The photoelectric conversion member 111 for generating the charge, the plurality of pixel circuits 21 for storing the charge generated by the photoelectric conversion member 111 in pixel units, and the charge amount stored in each of the plurality of pixel circuits 21 are read out A voltage control circuit including a read out circuit 130 and an output circuit 140 outputting an output image composed of pixel values based on the respective charge amounts read out by the read out circuit 130; Part 1340, a voltage control step of controlling the voltage applied to the photoelectric conversion member 111, the output circuit 140, and an output step of outputting the output image.

  This imaging method can control the photoelectric conversion efficiency of the photoelectric conversion member 111. Therefore, according to this imaging method, the image quality of the image to be imaged can be improved relative to the image quality of the image imaged by the conventional imaging method.

  The present disclosure is widely applicable to imaging devices that capture images.

1, 2, 3, 4, 5 Imaging Device 10, 610, 1310 Imaging Device 20, 620, 1120, 1320, 1620 Control Unit 21 Pixel Circuit 40, 640, 1140 Reduction Unit 110 Photoelectric Conversion Element 111 Photoelectric Conversion Member 112 Top Transparent Electrode 113 lower pixel electrode 120 pixel circuit array 130 readout circuit 130B reverse direction readout circuit 140 output circuit 140B reverse direction output circuit 150 row scanning circuit (initialization circuit)
160, 160B, 160C Timing control circuit 170 Voltage application circuit 200, 600, 1100, 1300, 1600 Camera 211 Zoom lens 212 Shake correction lens 213 Focus lens 214 Aperture 1340, 1640 Voltage control unit 1650 Acquisition unit

An imaging device according to an aspect of the present disclosure includes a photoelectric conversion member that generates a charge by an internal photoelectric effect by receiving light in an exposure state in which a voltage in a first predetermined range is applied, and a charge generated by the photoelectric conversion member A plurality of pixel circuits for storing pixels in pixel units, a read out circuit for reading out the charge amount stored in each of the plurality of pixel circuits, and a pixel value based on each of the charge amounts read out by the read out circuit. An image pickup element including an output circuit for outputting an output image; and a reduction unit for reducing an influence on the output image due to charges generated by the photoelectric conversion member in a light shielding state to which a voltage of a second predetermined range is applied. wherein the read circuit, said read, in the period the photoelectric conversion member is in the shielding state, the pixel circuit Bro consisting of one or more pixel circuits By sequentially performing the first pixel circuit block to the Nth (where N is an integer of 2 or more) pixel circuit blocks in units of pixel circuits, and further, in the period in which the photoelectric conversion member is in the light blocking state, the pixel circuit blocks A reverse direction readout circuit for reading out the charge amount stored in each of the plurality of pixel circuits in order from the Nth pixel circuit block to the first pixel circuit block in units, and readout by the reverse direction readout circuit And a reverse direction output circuit that outputs a reverse direction output image composed of pixel values based on the respective charge amounts, and the reduction unit performs the reduction by combining the reverse direction output image with the output image. .

An imaging device according to an aspect of the present disclosure is a photoelectric conversion member that generates a charge due to an internal photoelectric effect by receiving light in an exposure state in which a voltage in a first predetermined range is applied, the first predetermined being applied According to the voltage of the range, the higher the voltage, the higher the photoelectric conversion efficiency, and the photoelectric conversion member that generates the electric charge, and the plurality of electric charges generated by the photoelectric conversion member are accumulated in pixel units. A pixel circuit, a readout circuit for reading out the amount of charge stored in each of the plurality of pixel circuits, and an output circuit for outputting an output image composed of pixel values based on each of the amounts of charge read out by the readout circuit an imaging element comprising, a voltage control unit for controlling a voltage applied to the photoelectric conversion member, further, an external lens for condensing light to the photoelectric conversion member, the An aperture for adjusting the amount of light collected by the lens, and the voltage control unit performs the control when the aperture amount of the aperture changes when the photoelectric conversion member is in the exposure state: The voltage applied to the photoelectric conversion member is changed according to the change .

An imaging method according to an aspect of the present disclosure is an imaging method performed by an imaging device including an imaging element and a reduction unit, wherein the imaging element receives light in an exposure state in which a voltage of a first predetermined range is applied. The photoelectric conversion member that generates charges by the internal photoelectric effect, a plurality of pixel circuits that accumulate the charges generated by the photoelectric conversion members in pixel units, and the charge amounts accumulated in each of the plurality of pixel circuits An output step of outputting an output image, the output circuit outputting an output image, and an output circuit outputting an output image consisting of pixel values based on respective charge amounts read out by the read out circuit; A reduction step for reducing the influence on the output image by the charge generated by the photoelectric conversion member in the light shielding state to which the voltage of the second predetermined range is applied. Look including the door, said read circuit, said read, in the period the photoelectric conversion member is in the shielding state, the pixel circuit block comprising one or more pixel circuits, the N (N from the first pixel circuit block Is performed in order to an integer of 2 or more) pixel circuit blocks, and the imaging device further includes the Nth pixel circuit block in units of pixel circuit blocks in a period in which the photoelectric conversion member is in the light blocking state. A reverse direction readout circuit for reading out the charge amount stored in each of the plurality of pixel circuits in order from the first pixel circuit block to the first pixel circuit block, and a pixel value based on each charge amount read out by the reverse direction readout circuit And a reverse direction output circuit for outputting a reverse direction output image, the reduction step comprising: It carried out by combining the image.

An imaging method according to an aspect of the present disclosure is an imaging method performed by an imaging device including an imaging element and a voltage control unit, and the imaging element receives light in an exposure state in which a voltage of a first predetermined range is applied. A photoelectric conversion member for generating charges by internal photoelectric effect, wherein the generation of the charges is such that the higher the voltage is, the higher the photoelectric conversion efficiency according to the voltage of the first predetermined range to be applied. , A plurality of pixel circuits for storing the charge generated by the photoelectric conversion member in pixel units, a readout circuit for reading out the charge amount stored in each of the plurality of pixel circuits, and the readout And an output circuit for outputting an output image composed of pixel values based on each of the charge amounts read by the circuit, wherein the voltage control unit is configured to output a voltage applied to the photoelectric conversion member. A voltage control step Gosuru, the output circuit, see contains an output step of outputting the output image, the imaging apparatus may further include an external lens for condensing light to the photoelectric conversion element, by the lens And a diaphragm for adjusting the amount of light to be collected, and in the voltage control step, the voltage control unit performs the control in a case where the diaphragm of the photoelectric conversion member is in the exposure state. When changing, the voltage applied to the photoelectric conversion member is changed according to the change .

Claims (17)

A photoelectric conversion member that generates a charge by an internal photoelectric effect by receiving light in an exposure state in which a voltage in a first predetermined range is applied, and a plurality of pixel circuits that accumulate the charge generated by the photoelectric conversion member in pixel units An imaging circuit including: a readout circuit for reading out the charge amount stored in each of the plurality of pixel circuits; and an output circuit for outputting an output image composed of pixel values based on each of the charge amounts read out by the readout circuit. Element,
An imaging apparatus, comprising: a reduction unit configured to reduce the influence on the output image by the charge generated by the photoelectric conversion member in the light shielding state to which a voltage of a second predetermined range is applied. The readout circuit performs the readout from the first pixel circuit block to the Nth (N is an integer of 2 or more) in units of pixel circuit blocks including one or more pixel circuits in a period in which the photoelectric conversion member is in the light shielding state. ) In order to the pixel circuit block,
The reduction unit targets the reduction according to a time difference between the time when the readout circuit executes the readout with the pixel circuit of the first pixel circuit block for each pixel circuit block. The imaging device according to claim 1, wherein the imaging device performs correction by correcting a pixel value of the output image corresponding to a pixel circuit block. The reduction unit performs the correction on each pixel circuit block, corresponding to the target pixel circuit block, with respect to the pixel value of the output image, the smaller the time difference becomes, the smaller the value becomes 1 or less. The image pickup apparatus according to claim 2, wherein the correction is performed by multiplying the correction coefficient. The readout circuit performs the readout from the first pixel circuit block to the Nth (N is an integer of 2 or more) in units of pixel circuit blocks including one or more pixel circuits in a period in which the photoelectric conversion member is in the light shielding state. ) In order to the pixel circuit block,
Furthermore, during the period in which the photoelectric conversion member is in the light shielding state, the Nth pixel circuit block is accumulated in each of the plurality of pixel circuits in order from the Nth pixel circuit block to the first pixel circuit block. Reverse direction readout circuit that reads out the amount of charge
A reverse direction output circuit for outputting a reverse direction output image composed of pixel values based on the respective charge amounts read by the reverse direction read out circuit;
The imaging device according to claim 1, wherein the reduction unit performs the reduction by combining the output image with the output image in the reverse direction. The reduction unit performs the combining process by performing a process including adding a pixel value of the reverse output image at a position corresponding to the pixel value to each pixel value of the output image. 4. The imaging device according to 4. further,
A lens for condensing external light on the photoelectric conversion member;
And a stop for adjusting the amount of light collected by the lens,
The imaging device according to claim 1, wherein the reduction unit performs the reduction by narrowing the aperture during at least a part of a period in which the photoelectric conversion member is in the light shielding state. In a part of the period, from the time when the state of the photoelectric conversion member is changed from the exposure state to the light blocking state, the time from the time point to the time when the readout by the readout circuit is completed The imaging device according to claim 6, wherein a period is included. A photoelectric conversion member that generates a charge due to internal photoelectric effect by receiving light in an exposure state in which a voltage in a first predetermined range is applied, wherein the voltage is higher according to the voltage in the first predetermined range to be applied The photoelectric conversion member that generates the charge so as to increase the photoelectric conversion efficiency, the plurality of pixel circuits that accumulate the charge generated by the photoelectric conversion member in pixel units, and the plurality of pixel circuits An imaging device including a readout circuit for reading out the amount of charge stored in the image sensor, and an output circuit for outputting an output image composed of pixel values based on the respective amounts of charge read out by the readout circuit;
And a voltage control unit configured to control a voltage applied to the photoelectric conversion member. further,
A lens for condensing external light on the photoelectric conversion member;
And a stop for adjusting the amount of light collected by the lens,
In the case where the photoelectric conversion member is in the exposure state, the voltage control unit changes the voltage applied to the photoelectric conversion member according to the change when the stop amount of the diaphragm changes when the photoelectric conversion member is in the exposure state. The imaging device according to claim 8. The voltage control unit applies the control to the photoelectric conversion member according to the change when the stop amount of the stop changes so as to increase when the photoelectric conversion member is in the exposure state. The imaging device according to claim 9, wherein the voltage is increased. The readout circuit sequentially performs the readout from the first pixel circuit block to the Nth (N is an integer of 2 or more) pixel circuit block in units of pixel circuit blocks including one or more pixel circuits.
The voltage control unit performs the control so that the voltage of the first predetermined range is applied to the photoelectric conversion member during at least a part of a period from the start time point to the end time point of the readout by the readout circuit. The imaging device according to claim 8. further,
Information on a first distribution in the plurality of pixel circuits of an estimated charge amount indicating an amount of charge estimated to be accumulated in each of the plurality of pixel circuits when the read out circuit starts the read out Equipped with an acquisition unit to acquire
The voltage control unit performs the control based on the information acquired by the acquisition unit, and a distribution of the amount of charge read by the readout circuit in the plurality of pixel circuits is larger than the first distribution, The imaging device according to claim 11, wherein the image is distributed so as to have a flatter distribution. The imaging device according to any one of claims 1 to 12, wherein the imaging element is an organic CMOS image sensor using an organic thin film as the photoelectric conversion member. An imaging device according to any one of claims 1 to 5, 8, 11, 12.
A camera comprising: a lens for collecting external light on the imaging element; The camera according to claim 14, wherein the imaging device is an organic CMOS image sensor using an organic thin film as the photoelectric conversion member. An imaging method performed by an imaging apparatus including an imaging element and a reduction unit, the imaging method comprising:
The image pickup device accumulates the charge generated by the photoelectric conversion member in a pixel unit by the photoelectric conversion member generating the charge by the internal photoelectric effect by receiving light in the exposure state to which the voltage of the first predetermined range is applied. A plurality of pixel circuits, a readout circuit for reading out the charge amount stored in each of the plurality of pixel circuits, and an output for outputting an output image composed of pixel values based on each of the charge amounts read out by the readout circuit Including circuits and
An output step of the output circuit outputting an output image;
An imaging step of reducing the influence on the output image by the electric charge generated by the photoelectric conversion member in the light shielding state to which the voltage of the second predetermined range is applied. An imaging method performed by an imaging apparatus including an imaging element and a voltage control unit, the imaging method comprising:
The imaging device is a photoelectric conversion member that generates a charge by an internal photoelectric effect by receiving light in an exposure state in which a voltage in a first predetermined range is applied, and the imaging device responds to the voltage in the first predetermined range to be applied. A photoelectric conversion member that generates the charge such that the higher the voltage is, the higher the photoelectric conversion efficiency; a plurality of pixel circuits that accumulate the charge generated by the photoelectric conversion member in pixel units; A readout circuit for reading out the amount of charge accumulated in each of the pixel circuits, and an output circuit for outputting an output image composed of pixel values based on each of the amounts of charge read out by the readout circuit,
A voltage control step of controlling the voltage applied to the photoelectric conversion member by the voltage control unit;
And an output step of outputting the output image.

Images