JPWO2017221808A1 - 被処理体を処理する方法 - Google Patents
被処理体を処理する方法 Download PDFInfo
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- JPWO2017221808A1 JPWO2017221808A1 JP2018524000A JP2018524000A JPWO2017221808A1 JP WO2017221808 A1 JPWO2017221808 A1 JP WO2017221808A1 JP 2018524000 A JP2018524000 A JP 2018524000A JP 2018524000 A JP2018524000 A JP 2018524000A JP WO2017221808 A1 JPWO2017221808 A1 JP WO2017221808A1
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- 238000012545 processing Methods 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000007789 gas Substances 0.000 claims abstract description 206
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 19
- 150000002367 halogens Chemical class 0.000 claims abstract description 19
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000008021 deposition Effects 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 17
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 description 25
- 150000002500 ions Chemical class 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Abstract
Description
工程S4は、例えば以下の条件で実施され得る。
・処理室4内の圧力の値[Pa]:0.1〜10[Pa]
・高周波電源15の周波数の値[MHz]および高周波電力の値[ワット]:13.56[MHz]、100〜5000[ワット]
・高周波電源29の周波数の値[MHz]およびバイアス電力の値[ワット]:0.1〜6[MHz]、100〜1000[ワット]
・処理ガス:N2ガス(第1のガス)、SiH4ガス(第2のガス)、SiF4ガス(第3のガス)
・処理ガスの流量[sccm]:(N2ガス)1〜500[sccm]、(SiH4ガス)1〜300[sccm]、(SiF4ガス)1〜100[sccm]
・第2のガスの供給のONの時間およびOFFの時間[s]:(ONの時間)0.1〜10[s]、(OFFの時間)0.1〜30[s]
なお、第2のガスの供給のONおよびOFFの繰返し数や、全体の処理時間(方法MTの実行時間であり時刻T1から時刻T9に至るまでの時間)は、膜63の埋め込みのパターン(溝62の形状)や埋め込む厚さ(溝62の深さ)、等の種々の要因によって決定され得る。
Claims (9)
- 被処理体を処理する方法であって、該被処理体は、該被処理体の主面に溝が形成されており、該方法は、
プラズマ処理装置の処理室内に前記被処理体を収容する第1工程と、
前記第1工程の後に、前記処理室内への第1のガスの供給を開始する第2工程と、
前記第2工程の後に、前記処理室内へのプラズマ生成用高周波電力の供給を開始する第3工程と、
前記第3工程の後に、前記処理室内への第2のガスの断続的な供給を開始すると共に、該処理室内への第3のガスの供給を開始する第4工程と、
を備え、
前記第1のガスは、窒素含有ガスであり、
前記第2のガスは、ハロゲンを含まないガスであり、
前記第3のガスは、ハロゲンを含むガスである、
方法。 - 前記プラズマ生成用高周波電力によって生成される前記第2のガスのプラズマは、デポジション種を含む、
請求項1に記載の方法。 - 前記プラズマ生成用高周波電力によって生成される前記第3のガスのプラズマは、エッチング種を含む、
請求項1または請求項2に記載の方法。 - 前記第2のガスは、シラン系ガスである、
請求項1〜3の何れか一項に記載の方法。 - 前記第2のガスは、SiH4ガスである、
請求項4に記載の方法。 - 前記第3のガスは、フッ素を含むガスである、
請求項1〜5の何れか一項に記載の方法。 - 前記第3のガスは、SiF4ガスである、
請求項6に記載の方法。 - 前記第4工程の後に、前記第2工程で開始した前記第1のガスの供給と、前記第3工程で開始した前記プラズマ生成用高周波電力の供給と、該第4工程で開始した前記第3のガスの供給とを継続しつつ、該第4工程で開始した前記第2のガスの供給を終了する第5工程と、
前記第5工程の後に、前記第2工程で開始した前記第1のガスの供給と、前記第4工程で開始した前記第3のガスの供給とを継続しつつ、前記第3工程で開始した前記プラズマ生成用高周波電力の供給を終了する第6工程と、
をさらに備える、
請求項1〜7の何れか一項に記載の方法。 - 前記第3工程は、前記プラズマ生成用高周波電力の供給の開始と共に、前記被処理体を支持する載置台へのイオン引き込み用バイアス電力の印加をさらに開始し、
前記被処理体の前記溝は、該被処理体の前記主面から該主面に対し略垂直方向に向けて延びている、
請求項1〜8の何れか一項に記載の方法。
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