JPWO2016104098A1 - プラズマ処理装置およびプラズマ処理方法 - Google Patents
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Abstract
Description
本願は、2014年12月25日に日本国に出願された特願2014−263547号に基づき、優先権を主張し、その内容をここに援用する。
本発明は、マイクロ波を用いてプラズマを励起するプラズマ処理装置およびプラズマ処理方法に関する。
Vapor Deposition)、プラズマスパッタリング等のプラズマ処理が行われる。
10 処理容器
55 マイクロ波発生部
62 プラズマ生成ガス供給源
64 処理ガス供給源
200 マイクロ波制御回路
201 発振回路
202 パルス発生回路
203 周波数変調回路
205 演算回路
W ウェハ
Claims (8)
- マイクロ波を発生させるマイクロ波発生部と、マイクロ波を導入可能な処理容器と、前記処理容器内へガスを供給するガス供給機構とを備え、前記処理容器内にプラズマを発生させて、被処理体をプラズマ処理するプラズマ処理装置において、
前記マイクロ波発生部は、マイクロ波を発振する発振回路と、一定の周期で所定の周波数帯域幅の制御波を発振するパルス発生回路と、前記マイクロ波の周波数を前記制御波によって前記所定の周波数帯域幅の変調波に変調して出力する周波数変調回路と、を有し、
前記周波数変調回路は、前記一定の周期で、前記変調波と、変調しないマイクロ波とを交互に繰り返し出力する。 - 請求項1に記載のプラズマ処理装置において、
前記マイクロ波発生部は、演算回路を有し、
前記パルス発生回路は、前記制御波と同じタイミングの同期波を発振し、
前記演算回路は、前記同期波のタイミングに合わせて前記変調波の反射波をモニタし、前記反射波に基づいて前記マイクロ波の周波数を制御する。 - マイクロ波を導入可能な処理容器へガスを供給し、前記処理容器内にプラズマを発生させて、被処理体をプラズマ処理するプラズマ処理方法において、
マイクロ波の発振時に、一定の周期で、所定の周波数帯域幅の制御波を発振し、前記制御波によって前記マイクロ波を前記所定の周波数帯域幅の変調波に変調し、前記変調波と、変調しないマイクロ波とを交互に繰り返し出力する。 - 請求項3に記載のプラズマ処理方法において、
前記制御波と同じタイミングの同期波を発振し、前記同期波のタイミングに合わせて前記変調波の反射波をモニタし、前記反射波に基づいて前記マイクロ波の周波数を制御する。 - 請求項4に記載のプラズマ処理方法において、
前記マイクロ波の周波数を、前記反射波の反射が少ないマイクロ波の吸収ピーク時の周波数に制御する。 - 請求項3に記載のプラズマ処理方法において、
前記制御波が発振される時間は、前記マイクロ波の発振時間全体の10%以下である。 - 請求項4に記載のプラズマ処理方法において、
前記制御波が発振される時間は、前記マイクロ波の発振時間全体の10%以下である。 - 請求項5に記載のプラズマ処理方法において、
前記制御波が発振される時間は、前記マイクロ波の発振時間全体の10%以下である。
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JP2023155564A (ja) * | 2022-04-11 | 2023-10-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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TWI665712B (zh) | 2019-07-11 |
WO2016104098A1 (ja) | 2016-06-30 |
US20170345664A1 (en) | 2017-11-30 |
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