JPWO2016063695A1 - Metal foil-clad board, circuit board, and heating element mounting board - Google Patents

Abstract

The metal foil-clad substrate of the present invention is used to form a circuit board on which a heating element is mounted. The metal foil-clad substrate of the present invention includes a flat metal foil, an insulating resin layer formed on one surface of the metal foil, and the metal of the resin layer in a plan view of the resin layer. A heat-dissipating metal plate for dissipating heat generated by the heating element, corresponding to a first area including an area where the heating element is mounted on the surface opposite to the foil; and the metal of the resin layer And an insulating portion formed corresponding to at least a part of the second region excluding the first region on the surface opposite to the foil. The insulating part is composed of a cured product of a first resin composition containing a first thermosetting resin, and the resin layer contains a resin material and is different from the first resin composition. It is comprised by the hardened | cured material or solidified material of this resin composition. Moreover, the said heat radiating metal plate has at least 1 protrusion which protrudes from a joint surface with the said insulation part.

Description

  The present invention relates to a metal foil-clad substrate, a circuit substrate, and a heating element mounting substrate.

  In recent years, SiC / GaN power semiconductor devices equipped with elements using SiC (silicon carbide) or GaN (gallium nitride) have attracted attention from the viewpoint of effective use of electrical energy (for example, see Patent Document 1). .

  These devices can not only significantly reduce power loss compared to conventional Si-based devices, but can also operate at higher voltages, higher currents, and temperatures as high as 300 ° C. is there. For this reason, SiC / GaN power semiconductor devices are expected to be used for applications that are difficult to apply to conventional Si power semiconductor devices.

  In this way, the element (semiconductor element) using SiC / GaN itself can operate under the severe conditions as described above. Therefore, for a circuit board on which a semiconductor device including this element is mounted, heat generated by driving a semiconductor element that is a heating element is applied to the semiconductor element itself and further to other members mounted on the circuit board. On the other hand, it is required to efficiently dissipate heat through the circuit board in order to prevent adverse effects.

  Such a requirement is not limited to the semiconductor device, and the same applies to, for example, a circuit board on which another heating element such as a light emitting element such as a light emitting diode is mounted.

Japanese Patent Laying-Open No. 2005-167035

  An object of the present invention is to provide a metal foil-clad substrate that can manufacture a circuit board that can efficiently dissipate heat generated from a heating element to be mounted. Another object of the present invention is to provide a circuit board manufactured using such a metal foil-clad substrate and a heating element mounting board in which a heating element is mounted on the circuit board.

Such an object is achieved by the present invention described in the following (1) to (12).
(1) A metal foil-clad substrate used for forming a circuit board to be mounted by electrically connecting a heating element that generates heat,
A flat metal foil,
An insulating resin layer formed on one surface of the metal foil;
Heat generated by the heating element formed corresponding to a first region including a region where the heating element is mounted on the surface of the resin layer opposite to the metal foil in a plan view of the resin layer. A heat dissipating metal plate to dissipate heat,
An insulating portion formed corresponding to at least a part of the second region excluding the first region on the surface of the resin layer opposite to the metal foil;
The insulating part is composed of a cured product of a first resin composition containing a first thermosetting resin,
The resin layer contains a resin material, and is composed of a cured or solidified product of a second resin composition different from the first resin composition,
The metal foil-clad substrate, wherein the heat radiating metal plate has at least one protrusion protruding from a joint surface with the insulating portion.

  (2) The metal foil-clad substrate according to (1), wherein the at least one protrusion includes a protrusion protruding in the middle of the heat dissipation metal plate in the thickness direction.

  (3) The metal foil-clad substrate according to (1) or (2), wherein the at least one protrusion includes a protrusion protruding on the resin layer side of the heat radiating metal plate.

  (4) The metal foil-clad substrate according to (1) to (3), wherein the at least one protrusion includes a protrusion that protrudes on the side opposite to the resin layer of the heat radiating metal plate.

  (5) The metal foil-clad substrate according to any one of (1) to (4), wherein the at least one protrusion includes a protrusion protruding in the middle of the direction perpendicular to the thickness direction of the heat dissipation metal plate.

  (6) The metal foil-clad substrate according to (5), wherein the at least one protrusion includes a protrusion that protrudes inclined with respect to a thickness direction of the heat dissipation metal plate.

  (7) The metal foil-clad substrate according to any one of (1) to (6), wherein the resin material is a second thermosetting resin.

  (8) The metal foil-clad substrate according to (7), wherein the second thermosetting resin is an epoxy resin.

  (9) The metal foil-clad substrate according to any one of (1) to (8), wherein the first thermosetting resin is a phenol resin.

  (10) In any one of the above (1) to (9), a flat surface is configured by a surface opposite to the resin layer of the insulating portion and a surface opposite to the resin layer of the heat radiating metal plate. Metal foil-clad board.

(11) A circuit board formed using the metal foil-clad substrate according to any one of (1) to (10) above,
A circuit board comprising a circuit provided with a terminal for electrically connecting the heating element formed by patterning the metal foil.

  (12) A heating element mounting board comprising the circuit board according to (11) and the heating element electrically connected to the terminal and mounted on the circuit board.

  With the configuration of the metal foil-clad substrate of the present invention, it is possible to manufacture a circuit board that can efficiently dissipate heat generated from a heating element to be mounted.

  Therefore, by mounting a heating element on the circuit board of the present invention to obtain a heating element mounting board, heat generated from the heating element can be efficiently radiated through the circuit board in the heating element mounting board. .

FIG. 1 is a longitudinal sectional view showing a first embodiment of a heating element mounting substrate of the present invention. FIG. 2 is a diagram (plan view) seen from the direction of arrow A in FIG. FIG. 3 is a schematic diagram of a longitudinal section in a surface layer of a heat dissipation metal plate provided in the heating element mounting substrate shown in FIG. FIG. 4 is a diagram for explaining a method of manufacturing a metal foil-clad substrate used for manufacturing the heating element mounting substrate of FIG. FIG. 5 is a view for explaining a method of manufacturing a metal foil-clad substrate used for manufacturing the heating element mounting substrate of FIG. FIG. 6 is a longitudinal sectional view showing a second embodiment of the heating element mounting substrate of the present invention. FIG. 7 is a longitudinal sectional view showing a third embodiment of the heating element mounting substrate of the present invention. FIG. 8 is a longitudinal sectional view showing a fourth embodiment of the heating element mounting substrate of the present invention. FIG. 9 is a longitudinal sectional view showing a fifth embodiment of the heating element mounting substrate of the present invention. FIG. 10 is a longitudinal sectional view showing a sixth embodiment of the heating element mounting substrate of the present invention. 11A and 11B are diagrams (FIG. 11A is a plan view and FIG. 11B is a side view) illustrating a heat dissipation metal plate included in a circuit board included in the semiconductor device of FIG. FIG. 12 is a longitudinal sectional view showing a seventh embodiment of the heating element mounting substrate of the present invention. FIG. 13 is a view (FIG. 13A is a plan view and FIG. 13B is a side view) showing a heat dissipation metal plate included in a circuit board provided in the semiconductor device of FIG. FIG. 14 is a longitudinal sectional view showing an eighth embodiment of the heating element mounting substrate of the present invention. 15A and 15B are diagrams (FIG. 15A is a plan view and FIG. 15B is a side view) showing a heat dissipation metal plate included in a circuit board provided in the semiconductor device of FIG. FIG. 16 is a longitudinal sectional view showing a ninth embodiment of the heating element mounting substrate of the present invention. 17 is a view (FIG. 17 (a) is a plan view and FIG. 17 (b) is a side view) showing a heat dissipation metal plate included in a circuit board included in the semiconductor device of FIG. FIG. 18 is a longitudinal sectional view showing a tenth embodiment of the heating element mounting substrate of the present invention. FIG. 19 is a diagram (plan view) seen from the direction of arrow A in FIG. FIG. 20 is a longitudinal sectional view showing an eleventh embodiment of the heating element mounting substrate of the present invention. FIG. 21 is a diagram (plan view) seen from the direction of arrow A in FIG. FIG. 22 is a longitudinal sectional view showing a twelfth embodiment of the heating element mounting substrate of the present invention. FIG. 23 is a longitudinal sectional view showing a test piece used in the example. FIG. 24 is an electron micrograph of the vicinity of the interface between the resin layer and the insulating portion in the test piece of Example 1A. FIG. 25 is an electron micrograph of the vicinity of the interface between the resin layer and the insulating portion in the test piece of Example 2A. FIG. 26 is an electron micrograph of the vicinity of the interface between the resin layer and the insulating portion in the test piece of Example 3A. FIG. 27 is an electron micrograph of the vicinity of the interface between the resin layer and the insulating portion in the test piece of Example 4A. FIG. 28 is an electron micrograph of the vicinity of the interface between the resin layer and the insulating portion in the test piece of Example 5A. FIG. 29 is an electron micrograph of the vicinity of the interface between the resin layer and the insulating portion in the test piece of Example 6A. FIG. 30 is an electron micrograph of the vicinity of the interface between the resin layer and the insulating portion in the test piece of Example 7A. FIG. 31 is an electron micrograph showing an enlarged view of the surface layer present on the surface of the aluminum alloy plate 1B obtained in Example 5B. FIG. 32 is an electron micrograph showing an enlarged view of a cross section of the joint portion between the insulating portion and the heat radiating metal plate of the metal foil-clad substrate 5B obtained in Example 5B.

  Hereinafter, a metal foil-clad substrate, a circuit board, and a heating element mounting substrate according to the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  First, prior to describing the metal foil-clad substrate and circuit board of the present invention, the heating element mounting substrate of the present invention will be described.

  In the following, a case where a semiconductor device including a semiconductor element as a heating element is mounted on a circuit board will be described as an example of the heating element mounting substrate of the present invention.

<Heat generating board>
<< First Embodiment >>
1 is a longitudinal sectional view showing a first embodiment of a heating element mounting substrate of the present invention, FIG. 2 is a view (plan view) seen from the direction of arrow A in FIG. 1, and FIG. 3 is shown in FIG. It is a schematic diagram of the longitudinal cross-section in the surface layer which the heat radiating metal plate with which a heat generating body mounting board | substrate has. In the following, for convenience of explanation, the upper side in FIGS. 1 and 3, the front side in FIG. 2 is also referred to as “up”, the lower side in FIG. 1, and the back side in FIG. In each figure, the heating element mounting substrate and its respective parts are schematically shown exaggeratedly, and the size and ratio of the heating element mounting board and its respective parts are greatly different from the actual ones.

  A heating element mounting substrate 50 shown in FIGS. 1 and 2 includes a semiconductor device 1 that is a heating element that generates heat when driven, and a circuit board (circuit board of the present invention) 10 on which the semiconductor device 1 is mounted. . In addition to the semiconductor device 1, other electronic components (members) such as resistors and transistors are usually mounted on the circuit board 10, but the description is omitted in FIGS. doing.

  The semiconductor device 1 is a semiconductor package including a semiconductor element (not shown). A mold part (sealing part) 11 for sealing the semiconductor element (semiconductor chip) and the semiconductor element (semiconductor chip) are electrically connected. And a connection terminal 12 connected thereto.

  In the present embodiment, the semiconductor element is configured using SiC (silicon carbide) or GaN (gallium nitride). This semiconductor element generates heat when driven.

  Moreover, the mold part 11 is normally comprised with the hardened | cured material of various resin materials, and is sealing the semiconductor element by surrounding a semiconductor element.

  Furthermore, the connection terminal 12 is comprised with various metal materials, such as Cu, Fe, Ni, and these alloys, for example. The connection terminal 12 is connected to a terminal included in the semiconductor element and a terminal included in the wiring 4 included in the circuit board 10. Thereby, the terminal provided in the semiconductor element and the terminal provided in the wiring 4 are electrically connected.

  The circuit board 10 (wiring board) is provided on the wiring 4 that electrically connects the semiconductor device 1 and on the lower surface (the surface opposite to the semiconductor device 1; one surface) of the wiring 4 and supports the wiring 4. And a base material (base portion) 8 having a shape (sheet shape).

  The wiring (circuit) 4 is formed in a predetermined pattern. A terminal (not shown) provided by forming this pattern is electrically connected to a connection terminal (terminal) 12 included in the semiconductor device 1. Thereby, the terminal provided in the semiconductor element and the terminal provided in the wiring 4 are electrically connected.

  The wiring (conductor portion) 4 electrically connects electronic components including the semiconductor device 1 mounted on the circuit board 10, and transfers heat generated in the semiconductor device 1 to the lower surface side of the base material 8 to release it. It has a function as a heat receiving plate. Such wiring 4 is formed by patterning a metal foil 4A included in a metal foil-clad substrate 10A described later.

  Examples of the constituent material of the wiring 4 include various metal materials such as copper, a copper-based alloy, aluminum, and an aluminum-based alloy.

  Further, the thermal conductivity in the thickness direction of the wiring 4 is preferably 3 W / m · K or more and 500 W / m · K or less, and preferably 10 W / m · K or more and 400 W / m · K or less. More preferred. Such a wiring 4 has excellent thermal conductivity, and can efficiently transfer heat generated by driving a semiconductor element included in the semiconductor device 1 to the substrate 8 side through the wiring 4.

  The base material 8 is provided on a resin layer 5 having a flat plate shape (sheet shape) and a lower surface (a surface opposite to the wiring 4) of the resin layer 5, and the semiconductor device 1 is mounted in a plan view of the base material 8. The heat-dissipating metal plate 7 disposed corresponding to the first region 15 of the resin layer 5 including the region, and the resin layer corresponding to the second region 16 of the resin layer 5 excluding the first region 15 5 and an insulating part 6 covering 5.

  The resin layer (bonding layer) 5 is provided on the lower surface of the wiring 4, that is, provided between the wiring 4 and the insulating portion 6 and the heat radiating metal plate 7 located below the wiring 4. The wiring 4, the insulating portion 6, and the heat radiating metal plate 7 are joined via the resin layer 5.

  Moreover, this resin layer 5 has insulation. Thereby, the insulation state of the wiring 4 and the heat radiating metal plate 7 is ensured.

  Furthermore, the resin layer 5 is configured to exhibit excellent thermal conductivity. Thereby, the resin layer 5 can transfer the heat on the semiconductor device 1 (wiring 4) side to the heat radiating metal plate 7.

  The thermal conductivity of the resin layer 5 is preferably high. Specifically, it is preferably 1 W / m · K or more and 15 W / m · K or less, preferably 5 W / m · K or more and 10 W / More preferably, it is m · K or less. Thereby, the heat on the semiconductor device 1 side is efficiently transmitted to the heat radiating metal plate 7 by the resin layer 5. Therefore, heat generated by driving the semiconductor element of the semiconductor device 1 can be efficiently transmitted to the heat radiating metal plate 7 via the wiring 4 and the resin layer 5. As a result, the heat generated in the semiconductor device 1 can be radiated efficiently.

The thickness (average thickness) t ₅ of the resin layer 5 is not particularly limited, but as shown in FIG. 1, it is thinner than the thickness t ₇ of the heat radiating metal plate 7, specifically about 50 μm to 250 μm. It is preferable that the thickness is about 80 μm to 200 μm. Thereby, the thermal conductivity of the resin layer 5 can be improved while ensuring the insulation of the resin layer 5.

  The glass transition temperature of the resin layer 5 is preferably 100 ° C. or higher and 200 ° C. or lower. Thereby, the rigidity of the resin layer 5 increases and the curvature of the resin layer 5 can be reduced. As a result, the occurrence of warpage in the circuit board 10 can be suppressed.

  In addition, the glass transition temperature of the resin layer 5 can be measured as follows based on JIS C 6481.

  The measurement uses a dynamic viscoelasticity measuring apparatus (DMA / 983 manufactured by TA Instruments). A tensile load is applied to the resin layer 5 under a nitrogen atmosphere (200 ml / min). The glass transition temperature is measured under the conditions of a frequency of 1 Hz, a temperature range of −50 ° C. to 300 ° C., and a temperature rising rate of 5 ° C./min to obtain a chart. The glass transition temperature Tg is obtained from the peak position of tan δ of the obtained chart.

  The elastic modulus (storage elastic modulus) E ′ of the resin layer 5 at 25 ° C. is preferably 10 GPa or more and 70 GPa or less. Thereby, since the rigidity of the resin layer 5 increases, the curvature produced in the resin layer 5 can be reduced. As a result, the occurrence of warpage in the circuit board 10 can be suppressed.

  In addition, the said storage elastic modulus can be measured with a dynamic viscoelasticity measuring apparatus. Specifically, the storage elastic modulus E ′ is 25 when a tensile load is applied to the resin layer 5 and measured under conditions of a frequency of 1 Hz, a temperature increase rate of 5 to 10 ° C./min, and −50 ° C. to 300 ° C. Measured as the value of storage modulus at ° C.

  The resin layer 5 having such a function has a configuration in which fillers are dispersed in a layer composed of a resin material as a main material.

  The resin material exhibits a function as a binder that holds the filler in the resin layer 5. The filler has a thermal conductivity higher than that of the resin material. By setting the resin layer 5 to such a configuration, the thermal conductivity of the resin layer 5 can be increased.

  Such a resin layer 5 is comprised with the solidified material or hardened | cured material formed by solidifying or hardening the resin composition for resin layer formation containing a resin material and a filler mainly. That is, the resin layer 5 is composed of a cured product or a solidified product obtained by forming a resin composition for forming a resin layer into a layer shape.

Hereinafter, the resin composition for forming a resin layer will be described.
As described above, the resin composition for forming a resin layer (hereinafter, simply referred to as “second resin composition”) mainly includes a resin material and a filler.

  The resin material is not particularly limited, and various resin materials such as a thermoplastic resin and a thermosetting resin can be used.

  Examples of the thermoplastic resin include polyolefins such as polyethylene, polypropylene, and ethylene-vinyl acetate copolymer, modified polyolefins, polyamides (eg, nylon 6, nylon 46, nylon 66, nylon 610, nylon 612, nylon 11, nylon 12). , Nylon 6-12, nylon 6-66), thermoplastic polyimide, aromatic polyester and other liquid crystal polymers, polyphenylene oxide, polyphenylene sulfide, polycarbonate, polymethyl methacrylate, polyether, polyether ether ketone, polyether imide, polyacetal, Styrene, polyolefin, polyvinyl chloride, polyurethane, polyester, polyamide, polybutadiene, trans polyisoprene, fluoro rubber, salt Various thermoplastic elastomers, etc., or a copolymer of these His polyethylene type or the like, blends, polymer alloys and the like, can be used as a mixture of two or more of them.

  On the other hand, examples of the thermosetting resin (second thermosetting resin) include an epoxy resin, a phenol resin, a urea resin, a melamine resin, a polyester (unsaturated polyester) resin, a polyimide resin, a silicone resin, and a polyurethane resin. 1 type or 2 types or more of these can be mixed and used.

  Among these, as the resin material used for the second resin composition, it is preferable to use a thermosetting resin, and it is more preferable to use an epoxy resin. Thereby, the resin layer 5 which has the outstanding heat resistance can be obtained. Further, the wiring 4 can be firmly bonded to the base material 8 by the resin layer 5. Therefore, the obtained heating element mounting substrate 50 can exhibit excellent heat dissipation and excellent durability.

  Moreover, it is preferable that an epoxy resin contains the epoxy resin (A) which has at least any one of an aromatic ring structure and an alicyclic structure (alicyclic carbocyclic structure). By using such an epoxy resin (A), the glass transition temperature of the resin layer 5 can be increased, and the thermal conductivity of the resin layer 5 can be further improved. Moreover, the adhesiveness of the resin layer 5 with respect to the wiring 4, the insulation part 6, and the heat radiating metal plate 7 can be improved.

  Furthermore, as the epoxy resin (A) having an aromatic ring or alicyclic structure, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol E type epoxy resin, bisphenol M type epoxy resin, Bisphenol P type epoxy resin, bisphenol type epoxy resin such as bisphenol Z type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, novolak type epoxy resin such as tetraphenol group ethane type novolak type epoxy resin, biphenyl type epoxy resin , Arylalkylene type epoxy resins such as phenol aralkyl type epoxy resins having a biphenylene skeleton, and epoxy resins such as naphthalene type epoxy resins. May be used alone or in combination of two or more out.

  The epoxy resin (A) is preferably a naphthalene type epoxy resin. Thereby, the glass transition temperature of the resin layer 5 can be further increased, and the generation of voids in the resin layer 5 can be suppressed. Further, the thermal conductivity can be further improved and the dielectric breakdown voltage can be improved.

  The naphthalene type epoxy resin is a resin having a naphthalene ring skeleton and having two or more glycidyl groups.

  The content of the naphthalene type epoxy resin in the epoxy resin is preferably 20% by mass or more and 80% by mass or less, and more preferably 40% by mass or more and 60% by mass or less, with respect to 100% by mass of the epoxy resin.

  As a naphthalene type epoxy resin, any resin of the following formula | equation (5)-(8) is mentioned, for example.

［式中、ｍ、ｎはナフタレン環上の置換基の個数を示し、それぞれ独立して１〜７の整数を示す。］

[Wherein, m and n represent the number of substituents on the naphthalene ring, and each independently represents an integer of 1 to 7. ]

  In addition, as a compound of Formula (6), it is preferable to use any 1 or more types of the following.

［式中、Ｍｅはメチル基を示し、ｌ、ｍ、ｎは１以上の整数を示す。］

[Wherein, Me represents a methyl group, and l, m, and n represent an integer of 1 or more. ]

［式中、ｎは１以上２０以下の整数であり、ｌは１以上２以下の整数であり、Ｒ_１はそれぞれ独立に水素原子、ベンジル基、アルキル基または下記式（９）で表される置換基であり、Ｒ_２はそれぞれ独立に水素原子またはメチル基である。］

[Wherein, n is an integer of 1 or more and 20 or less, l is an integer of 1 or more and 2 or less, and each R ₁ is independently represented by a hydrogen atom, a benzyl group, an alkyl group or the following formula (9). A substituent, and each R ₂ independently represents a hydrogen atom or a methyl group. ]

［式中、Ａｒはそれぞれ独立にフェニレン基またはナフチレン基であり、Ｒ_２はそれぞれ独立に水素原子またはメチル基であり、ｍは１または２の整数である。］

[Wherein, Ar is each independently a phenylene group or a naphthylene group, R ₂ is each independently a hydrogen atom or a methyl group, and m is an integer of 1 or 2. ]

  The naphthalene type epoxy resin of the formula (8) is classified as a so-called naphthylene ether type epoxy resin. The compound represented by the formula (8) includes a compound represented by the following formula (10) as an example.

［上記式（１０）において、ｎは１以上２０以下の整数であり、好ましくは１以上１０以下の整数であり、より好ましくは１以上３以下の整数である。Ｒはそれぞれ独立に水素原子または下記式（１１）で表される置換基であり、好ましくは水素原子である。］

[In the above formula (10), n is an integer of 1 or more and 20 or less, preferably an integer of 1 or more and 10 or less, more preferably an integer of 1 or more and 3 or less. Each R is independently a hydrogen atom or a substituent represented by the following formula (11), preferably a hydrogen atom. ]

［上記式（１１）において、ｍは１または２の整数である。］

[In the above formula (11), m is an integer of 1 or 2. ]

  Furthermore, the naphthylene ether type epoxy resin represented by the above formula (10) specifically includes, for example, resins represented by the following formulas (12) to (16).

  The content of the resin material is preferably 30% by volume or more and 70% by volume or less, and preferably 40% by volume or more and 60% by volume or less of the entire second resin composition (excluding the solvent). More preferred. Thereby, the resin layer 5 which has the outstanding mechanical strength and thermal conductivity can be obtained. Moreover, the adhesiveness of the resin layer 5 with respect to the wiring 4, the insulation part 6, and the heat radiating metal plate 7 can be improved.

  On the other hand, when the content is less than the lower limit value, depending on the type of the resin material, the resin material cannot sufficiently function as a binder for bonding fillers to each other, and the resulting resin layer 5 is obtained. There is a risk that the mechanical strength of the steel will decrease. In addition, depending on the constituent material of the second resin composition, the viscosity of the second resin composition becomes too high, making it difficult to perform filtration and layering (coating) of the second resin composition (varnish). . Further, the flow of the second resin composition becomes too small, and there is a possibility that voids are generated in the resin layer 5.

  On the other hand, when the content exceeds the upper limit, depending on the type of the resin material, it may be difficult to obtain the resin layer 5 having excellent thermal conductivity while ensuring the insulation of the resin layer 5. is there.

  Moreover, when the resin material contains an epoxy resin, the second resin composition preferably contains a phenoxy resin. Thereby, since the bending resistance of the resin layer 5 can be improved, the handleability fall of the resin layer 5 by highly filling a filler can be suppressed.

  Moreover, when a phenoxy resin is included in the second resin composition, the fluidity at the time of pressing is reduced due to an increase in the viscosity of the second resin composition. Moreover, since the phenoxy resin is effective in ensuring the thickness of the resin layer 5, improving the uniformity of the thickness, and suppressing the generation of voids, the insulation reliability and thermal conductivity can be further enhanced. Further, the adhesion between the resin layer 5 and the wiring 4, the heat radiating metal plate 7 and the insulating portion 6 is improved. By these synergistic effects, the insulation reliability and thermal conductivity of the heating element mounting substrate 50 can be further enhanced.

  Examples of the phenoxy resin include a phenoxy resin having a bisphenol skeleton, a phenoxy resin having a naphthalene skeleton, a phenoxy resin having an anthracene skeleton, and a phenoxy resin having a biphenyl skeleton. A phenoxy resin having a structure having a plurality of these skeletons can also be used.

  Among these, it is preferable to use bisphenol A skeleton type or bisphenol F skeleton type phenoxy resin. A phenoxy resin having both a bisphenol A skeleton and a bisphenol F skeleton may be used.

The weight average molecular weight of the phenoxy resin is not particularly limited, but is preferably 4.0 × 10 ⁴ or more and 8.0 × 10 ⁴ or less.

  In addition, the weight average molecular weight of a phenoxy resin is a value in terms of polystyrene measured by gel permeation chromatography (GPC).

  For example, the content of the phenoxy resin is preferably 1% by mass or more and 15% by mass or less, more preferably 2% by mass or more and 10% by mass or less, with respect to 100% by mass of the total solid content of the second resin composition.

  In addition, the second resin composition includes a curing agent as necessary depending on the type of the resin material described above (for example, in the case of an epoxy resin).

  The curing agent is not particularly limited, and examples thereof include amide curing agents such as dicyandiamide and aliphatic polyamide, amine curing agents such as diaminodiphenylmethane, methanephenylenediamine, ammonia, triethylamine, and diethylamine, bisphenol A, and bisphenol F. And phenolic curing agents such as phenol novolac resin, cresol novolak resin, p-xylene-novolak resin, and acid anhydrides.

  Further, the second resin composition may further contain a curing catalyst (curing accelerator). Thereby, sclerosis | hardenability of a 2nd resin composition can be improved.

  Examples of the curing catalyst include amine catalysts such as imidazoles, 1,8-diazabicyclo (5,4,0) undecene, phosphorus catalysts such as triphenylphosphine, and the like. Of these, imidazoles are preferred. Thereby, in particular, both the fast curability and the storage stability of the second resin composition can be achieved.

  Examples of imidazoles include 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 1-cyanoethyl-2. -Phenylimidazolium trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl] -(1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-ethyl-4'methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino- 6- [2′-Methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole Anuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,4-diamino-6-vinyl-s-triazine, 2,4-diamino -6-vinyl-s-triazine isocyanuric acid adduct, 2,4-diamino-6-methacryloyloxyethyl-s-triazine, 2,4-diamino-6-methacryloyloxyethyl-s-triazine isocyanuric acid adduct, etc. Can be mentioned. Among these, 2-phenyl-4,5-dihydroxymethylimidazole or 2-phenyl-4-methyl-5-hydroxymethylimidazole is preferable. Thereby, the preservability of the second resin composition can be particularly improved.

  Moreover, the content of the curing catalyst is not particularly limited, but is preferably about 0.01 to 30 parts by mass, more preferably about 0.5 to 10 parts by mass with respect to 100 parts by mass of the resin material. preferable. If the content is less than the lower limit, the curability of the second resin composition may be insufficient. On the other hand, when the content exceeds the upper limit, the storage stability of the second resin composition tends to be lowered.

  The average particle diameter of the curing catalyst is not particularly limited, but is preferably 10 μm or less, and more preferably 1 to 5 μm. When the average particle size is within the above range, the reactivity of the curing catalyst is particularly excellent.

  Moreover, it is preferable that a 2nd resin composition contains a coupling agent further. Thereby, the adhesiveness of the resin material with respect to a filler, the insulation part 6, the thermal radiation metal plate 7, and the wiring 4 can be improved more.

  Examples of such coupling agents include silane coupling agents, titanium coupling agents, aluminum coupling agents, and the like. Of these, silane coupling agents are preferred. Thereby, the heat resistance and thermal conductivity of the second resin composition can be further improved.

  Among these, as the silane coupling agent, for example, vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltriethoxysilane, N-β (aminoethyl) γ-aminopropylmethyl Dimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysila N-phenyl-γ-aminopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, bis (3 -Triethoxysilylpropyl) tetrasulfane and the like.

  Although content of a coupling agent is not specifically limited, It is preferable that it is about 0.01-10 mass parts with respect to 100 mass parts of resin materials, and it is more preferable that it is especially about 0.5-10 mass parts. . If the content is less than the lower limit, the effect of improving the adhesion as described above may be insufficient. On the other hand, when the content exceeds the upper limit, outgas and voids may be caused when the resin layer 5 is formed.

  The filler in the second resin composition is composed of an inorganic material. Thereby, a filler exhibits heat conductivity higher than the heat conductivity of a resin material. Therefore, the thermal conductivity of the resin layer 5 can be increased by dispersing the filler in the second resin composition.

Such a filler is preferably a granular body composed of at least one of aluminum oxide (alumina, Al ₂ O ₃ ) and aluminum nitride among fillers composed of inorganic materials, A granular material composed of aluminum oxide is preferred. Thereby, the outstanding heat conductivity (heat dissipation) and the outstanding insulation can be exhibited. Aluminum oxide is particularly preferably used because it is highly versatile and can be obtained at low cost.

  Therefore, hereinafter, a case where the filler is a granular body mainly composed of aluminum oxide will be described as an example.

  The content of the filler is preferably 30% by volume or more and 70% by volume or less, and more preferably 40% by volume or more and 60% by volume or less of the entire second resin composition (excluding the solvent). By increasing the filler content in the second resin composition within such a range, the resin layer 5 having better thermal conductivity can be obtained.

  On the other hand, when the content is less than the lower limit, it is difficult to obtain the resin layer 5 having excellent thermal conductivity while ensuring the insulation of the resin layer 5. On the other hand, when the content exceeds the upper limit, depending on the constituent material of the second resin composition, the viscosity of the second resin composition becomes too high, and the varnish is filtered or formed into a layer (coating). ) Becomes difficult. Moreover, the flow of the second resin composition becomes too small, and voids may be generated in the resulting resin layer 5.

  In addition, even if the content rate of the filler in the second resin composition is set high as in the above range, as the second resin composition, the second resin composition under the conditions of a temperature of 25 ° C. and a shear rate of 1.0 rpm is used. When the viscosity of the resin composition is A [Pa · s], the viscosity of the second resin composition under the conditions of a temperature of 25 ° C. and a shear rate of 10.0 rpm is B [Pa · s], A / B By using the second resin composition that satisfies the relationship (thixotropic ratio) of 1.2 or more and 3.0 or less, an appropriate viscosity and an appropriate value can be obtained when the circuit board 10 (metal foil-clad substrate 10A) is manufactured. A second resin composition (varnish) having flowability can be provided.

  The water content of the filler is preferably 0.10% by mass to 0.30% by mass, more preferably 0.10% by mass to 0.25% by mass, and 0.12% by mass. % Or more and 0.20% by mass or less is more preferable. Thereby, if content of a filler is increased, the 2nd resin composition has more moderate viscosity and flow property. Therefore, the resin layer 5 having excellent thermal conductivity can be formed while preventing generation of voids in the obtained resin layer 5. That is, the resin layer 5 having excellent thermal conductivity and insulation can be formed.

  Aluminum oxide is usually obtained by firing aluminum hydroxide. The obtained aluminum oxide granules are composed of a plurality of primary particles. The average particle size of the primary particles can be set according to the firing conditions.

  Moreover, the aluminum oxide which has not been treated at all after the firing is composed of aggregates (secondary particles) in which primary particles are aggregated due to fixation.

  Therefore, the final filler can be obtained by solving the aggregation of the primary particles as necessary by pulverization. The average particle diameter of the final filler can be set according to the pulverization conditions (for example, time).

  During the grinding, aluminum oxide has a very high hardness. For this reason, the primary particles themselves are hardly destroyed by simply releasing the sticking between the primary particles. Therefore, the average particle diameter of the primary particles is substantially maintained even after pulverization.

  Therefore, as the grinding time becomes longer, the average particle size of the filler approaches the average particle size of the primary particles. And when grinding | pulverization time becomes more than predetermined time, the average particle diameter of a filler will become equal to the average particle diameter of a primary particle. That is, the filler is mainly composed of secondary particles when the grinding time is shortened. As the pulverization time is increased, the content of primary particles increases. The filler is mainly composed of primary particles when the pulverization time is finally a predetermined time or longer.

  Further, for example, primary particles of aluminum oxide obtained by firing aluminum hydroxide as described above have a shape having a flat surface such as a scaly shape instead of a spherical shape. Therefore, the contact area between fillers can be increased. As a result, the thermal conductivity of the obtained resin layer 5 can be increased.

  Further, the filler is a mixture of three components (large particle size, medium particle size, and small particle size) having different average particle sizes. Furthermore, it is preferable that the large particle size component is spherical and the medium particle size component and small particle size component are polyhedral.

  More specifically, the filler is preferably a mixture of large particle size aluminum oxide, medium particle size aluminum oxide, and small particle size aluminum oxide. The average particle size of the large particle size aluminum oxide is in the first particle size range of 5.0 μm to 50 μm, preferably 5.0 μm to 25 μm, and the circularity is 0.80 to 1.0, preferably 0.85 or more and 0.95 or less. The average particle size of the medium particle size aluminum oxide belongs to the second particle size range of 1.0 μm or more and less than 5.0 μm, and the circularity is 0.50 or more and 0.90 or less, preferably 0.70 or more and 0.80. It is as follows. The average particle size of the small-diameter aluminum oxide belongs to the third particle size range of 0.1 μm or more and less than 1.0 μm, and the circularity is 0.50 or more and 0.90 or less, preferably 0.70 or more and 0.80. There are:

  In addition, after dispersing aluminum oxide in water by sonicating the aluminum oxide liquid for 1 minute, the particle size of the filler can be measured using a laser diffraction particle size distribution analyzer SALD-7000. .

  Thereby, the medium particle size component is filled in the gap between the large particle size components, and the small particle size component is filled in the gap between the medium particle size components. Therefore, the filling property of aluminum oxide is enhanced, and the contact area between the aluminum oxide particles can be increased. As a result, the thermal conductivity of the resin layer 5 can be further improved. Furthermore, the heat resistance, bending resistance, and insulation of the resin layer 5 can be further improved.

  Further, by using such a filler, the adhesion between the resin layer 5 and the wiring 4, the heat radiating metal plate 7 and the insulating portion 6 can be further improved.

  By these synergistic effects, the insulation reliability and heat radiation reliability of the heating element mounting substrate 50 can be further enhanced.

  The second resin composition may contain additives such as a leveling agent and an antifoaming agent in addition to the components described above.

  The second resin composition contains a solvent such as methyl ethyl ketone, acetone, toluene, dimethylformaldehyde, and the like. Thereby, a 2nd resin composition will be in the state of a varnish, when resin material etc. melt | dissolve in a solvent.

  In addition, the 2nd resin composition which makes such a varnish shape can be obtained by, for example, mixing a resin material and a solvent as necessary to form a varnish, and further mixing a filler. .

  The mixer used for mixing is not particularly limited, and examples thereof include a disperser, a composite blade type stirrer, a bead mill, and a homogenizer.

  In addition, when the resin material has a high thermal conductivity, the addition of the filler to the second resin composition may be omitted. That is, the resin layer 5 does not include a filler and may be mainly composed of a resin material.

  The heat radiating metal plate 7 is a first surface on the lower surface (the surface opposite to the wiring 4) of the resin layer 5 including the region of the wiring 4 on which the semiconductor device 1 is mounted in a plan view of the base material 8 (resin layer 5). It is formed in region 15.

  Such a heat radiating metal plate 7 is a member that radiates heat generated in driving the semiconductor element included in the semiconductor device 1 from the lower surface side of the heat radiating metal plate 7 (circuit board 10) via the wiring 4 and the resin layer 5. Functions as a (heat sink).

  Therefore, the semiconductor element included in the semiconductor device 1 is configured using SiC (silicon carbide) or GaN (gallium nitride) as in the present embodiment, and is driven at a higher temperature than the conventional Si power semiconductor device. Even if this heat is generated, this heat can be released from the lower surface side through the heat radiating metal plate 7. Therefore, it is possible to accurately suppress or prevent the adverse effect of heat on the semiconductor element itself and further on other electronic components mounted on the circuit board 10.

  Further, the side surface 71 of the heat radiating metal plate 7 constitutes a joint surface with the insulating portion 6. Further, as shown in FIG. 1, the heat radiating metal plate 7 has a protrusion 73 protruding from a side surface (joint surface) 71.

  Here, as will be described later, the heat radiating metal plate 7 includes various metal materials, and the insulating portion 6 is a resin such as a cured product of a resin composition for forming an insulating portion (hereinafter simply referred to as “first resin composition”). Including system materials. Generally, since the adhesion (affinity) between a metal material and a resin-based material is low, the heat radiating metal plate 7 is firmly bonded to the insulating portion 6 (for example, between the heat radiating metal plate 7 and the insulating portion 6). It is required to prevent the heat-dissipating metal plate 7 from falling off the circuit board 10 by forming a metal-resin joined body (joined part). In response to such a requirement, in the present invention, the heat radiating metal plate 7 has a protrusion 73 protruding from the side surface 71. On the other hand, the insulating portion 6 is formed to be recessed in the joint surface with the heat radiating metal plate 7 and has a concave portion that engages with the protrusion 73. Accordingly, the protrusion 73 of the heat radiating metal plate 7 and the recess of the insulating portion 6 function as an engaging portion that engages with each other. Therefore, since the heat radiating metal plate 7 can be engaged with the insulating portion 6, the heat radiating metal plate 7 and the insulating portion 6 can be firmly joined.

  As shown in FIGS. 1 and 2, the protrusion 73 protrudes between an upper surface (surface on the resin layer 5 side) 72 and a lower surface (surface opposite to the resin layer 5) 74 of the heat radiating metal plate 7. . That is, the protrusion 73 protrudes in the middle of the thickness direction (vertical direction) of the heat radiating metal plate 7. Moreover, the protrusion 73 is comprised by the one convex part which protrudes along the surface direction in the middle of the thickness direction so that the side surface 71 may be surrounded in the surface direction (left-right direction) of the thermal radiation metal plate 7. FIG. That is, the protrusion 73 is provided along the circumferential direction of the heat radiating metal plate 7, and is configured by one annular convex portion (ridge) that protrudes sideways in the middle of the thickness direction of the heat radiating metal plate 7. .

  As width w1 of this protrusion 73, 0.5 mm or more and 3 mm or less are preferable, for example, 0.7 mm or more and 1.5 mm or less are more preferable.

  Further, the height h1 of the protrusion 73 is, for example, preferably 1 mm or more and 10 mm or less, and more preferably 2 mm or more and 5 mm or less.

  By setting the width w1 of the protrusion 73 and the height h1 of the protrusion 73 within such ranges, the protrusion 73 can more reliably exhibit the function as an engaging portion that engages with the insulating portion 6. The heat radiating metal plate 7 and the insulating portion 6 can be bonded more firmly.

  Further, as shown in FIG. 3, the heat radiating metal plate 7 preferably has a surface layer (roughening layer) 76 having a concave portion 75 formed on the side surface 71, and the concave portion 75 has an insulating material to be described later. It is preferable that the hardened | cured material of the 1st resin composition which comprises the part 6 is embedded. Thereby, the embedded cured product functions as an engaging portion that engages with the recess 75. Thus, since the insulating part 6 can be engaged with the heat radiating metal plate 7, the heat radiating metal plate 7 and the insulating part 6 can be joined more firmly.

  The surface layer 76 refers to a region having a plurality of recesses 75 provided on the surface of the heat radiating metal plate 7.

  The thickness of the surface layer 76 is preferably 3 μm or more and 40 μm or less, more preferably 4 μm or more and 32 μm or less, and further preferably 4 μm or more and 30 μm or less. When the thickness of the surface layer 76 is within the above range, a sufficient amount of the cured product can be embedded in the recess 75, and the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 can be improved more reliably. Can be made. In the present embodiment, the thickness of the surface layer 76 represents the depth D3 of the recess 75 having the largest depth among the plurality of recesses 75, as shown in FIG. The thickness of the surface layer 76 can be calculated from, for example, an electron microscope (SEM) photograph.

  Moreover, it is preferable that the recessed part 75 is provided with the enlarged diameter part 706 in which the internal diameter expands toward the bottom part 705 side from the opening part 703 side at least in part. That is, the cross section of the recess 75 has a shape including a diameter-enlarged portion 706 having a cross-sectional width D2 larger than the cross-sectional width D1 of the opening 703 in at least a part between the opening 703 and the bottom 705 of the recess 75. Preferably it is. As shown in FIG. 3, the cross-sectional shape of the recess 75 is not particularly limited as long as D2 is larger than D1, and can take various shapes. The cross-sectional shape of the recess 75 can be observed, for example, with an electron microscope (SEM).

  Since the cross-sectional shape of the concave portion 75 is the above shape, the insulating portion 6 and the heat radiating metal plate 7 can be bonded more firmly. The reason for this is not necessarily clear, but it is considered that the surface of the side surface 71 (surface layer 76) has a structure in which the anchor effect between the insulating portion 6 and the heat radiating metal plate 7 can be expressed more strongly. That is, when the cross-sectional shape of the concave portion 75 is the above shape, the insulating portion 6 is caught by the enlarged diameter portion 706 between the opening portion 703 and the bottom portion 705 of the concave portion 75, so that the anchor effect works effectively. Therefore, it is considered that the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 is improved.

  Furthermore, the recess 75 has an average depth of preferably 0.5 μm or more and 40 μm or less, and more preferably 1 μm or more and 30 μm or less. When the average depth of the recess 75 is equal to or less than the above upper limit value, the cured product can sufficiently enter the interior of the recess 75, so that the mechanical strength of the region where the cured product is embedded in the recess 75 is more sure. Can be improved. Moreover, since the ratio of the said hardened | cured material which exists in the inside of the recessed part 75 can be increased as the average depth of the recessed part 75 is more than the said lower limit, it is mechanical of the area | region where the said hardened | cured material was embedded in the recessed part 75. Strength can be improved. Therefore, when the average depth of the recess 75 is within the above range, the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 can be improved more reliably.

  In addition, the average depth of the recessed part 75 can be measured from a scanning electron microscope (SEM) photograph as follows, for example. That is, first, a cross section of the surface layer 76 is photographed with a scanning electron microscope. From the image, 50 concave portions 75 are arbitrarily selected and their depths are measured. Next, the total depth of the selected 50 recesses 75 can be divided by the number to obtain an average depth.

  The average cross-sectional width of the opening 703 of the recess 75 is preferably 2 μm or more and 60 μm or less, more preferably 3 μm or more and 50 μm or less, and further preferably 3 μm or more and 30 μm or less. When the average cross-sectional width of the opening 703 is equal to or less than the above upper limit value, the anchor effect between the insulating portion 6 and the heat radiating metal plate 7 can be expressed more strongly. Since the ratio of the said hardened | cured material which exists in the inside of the recessed part 75 can be increased as the average cross-sectional width of the opening part 703 is more than the said lower limit, the insulating part in the junction part of the insulating part 6 and the thermal radiation metal plate 7 can be increased. The strength of 6 can be improved. Therefore, when the average cross-sectional width of the opening 703 is within the above range, the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 can be further improved.

  The average cross-sectional width of the opening 703 can be measured from an SEM photograph as follows, for example. First, the cross section of the surface layer 76 is image | photographed with a scanning electron microscope. From the image, 50 concave portions 75 are arbitrarily selected, and their cross-sectional widths D1 are measured. Next, the total cross-sectional width D1 of the 50 selected openings 703 is divided by the number to obtain an average cross-sectional width.

  Furthermore, the surface roughness Ra of the side surface 71 of the radiating metal plate 7 is preferably 0.5 μm or more and 40.0 μm or less, more preferably 1.0 μm or more and 20.0 μm or less, and particularly preferably 1.0 μm or more. 10.0 μm or less. When the surface roughness Ra is within the above range, the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 can be improved more reliably. In addition, it can be said that the recessed part 75 of the fine shape is formed in the side surface 71 which has the surface roughness Ra in this range. By embedding the hardened material in such a recess 75, the insulating portion 6 and the heat radiating metal plate 7 can be firmly bonded.

  The maximum height Rz of the side surface 71 of the heat radiating metal plate 7 (that is, the depth D3 of the concave portion 75 having the largest depth among the concave portions 75) is preferably 1.0 μm or more and 40.0 μm or less, More preferably, it is 3.0 μm or more and 30.0 μm or less. When the maximum height Rz is within the above range, the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 can be improved more reliably. Ra and Rz can be measured according to JIS-B0601.

  In addition, the ratio of the actual surface area by the nitrogen adsorption BET method (hereinafter also simply referred to as “specific surface area”) to the apparent surface area of the side surface 71 joined to at least the insulating portion 6 of the heat radiating metal plate 7 is preferably 100 or more. More preferably, it is 150 or more. When the specific surface area is equal to or greater than the lower limit, the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 can be improved more reliably. The specific surface area is preferably 400 or less, more preferably 380 or less, and particularly preferably 300 or less. When the specific surface area is less than or equal to the upper limit, the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 can be improved more reliably.

  Here, the apparent surface area in the present embodiment means a surface area when it is assumed that the surface of the heat-dissipating metal plate 7 is smooth without unevenness. For example, when the surface shape of the side surface 71 is rectangular, the apparent surface area is represented by vertical length × horizontal length. On the other hand, the actual surface area by the nitrogen adsorption BET method in the present embodiment means the BET surface area obtained from the adsorption amount of nitrogen gas. For example, using an automatic specific surface area / pore distribution measuring device (BELSORPmini II, manufactured by Nippon Bell Co., Ltd.), the nitrogen adsorption / desorption amount at the liquid nitrogen temperature of the sample to be vacuum dried is measured, and based on the nitrogen adsorption / desorption amount The actual surface area can be calculated by the nitrogen adsorption BET method.

  When the specific surface area is within the above range, the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 can be reliably increased. The reason for this is not necessarily clear, but the surface layer 76 provided on the side surface 71 that is the joint surface with the insulating portion 6 can more securely and strongly develop the anchor effect between the insulating portion 6 and the heat radiating metal plate 7. This is thought to be due to the structure.

  When the specific surface area is equal to or greater than the lower limit, the contact area between the insulating portion 6 and the heat radiating metal plate 7 is increased, and the region where the insulating portion 6 and the heat radiating metal plate 7 are in contact with each other increases. As a result, the region where the anchor effect works increases, and it is considered that the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 is more reliably improved.

  On the other hand, if the specific surface area is too large, the proportion of the heat dissipation metal plate 7 in the region where the cured product is embedded in the recess 75 of the heat dissipation metal plate 7 decreases. 7 may decrease depending on the type of metal material contained in 7. Therefore, when the specific surface area is equal to or less than the upper limit value, it is possible to reliably prevent a decrease in mechanical strength in a region where the cured product is embedded in the recess 75. As a result, it is considered that the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 can be improved more reliably.

  From the above, when the specific surface area is within the above range, the side surface 71 that is a joint surface with the insulating portion 6 and the surface layer 76 that constitutes the vicinity thereof are anchor effects between the insulating portion 6 and the heat radiating metal plate 7. It is inferred that it has a well-balanced structure that can be more strongly expressed.

  Further, the heat dissipation metal plate 7 is not particularly limited, but the glossiness of the side surface 71 joined to the insulating portion 6 is preferably 0.1 or more, more preferably 0.5 or more, and further preferably 1 or more. It is. When the glossiness is equal to or higher than the lower limit, the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 can be improved more reliably. Further, the glossiness is preferably 30 or less, more preferably 20 or less. When the glossiness is less than or equal to the upper limit, the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 can be improved more reliably. Here, the glossiness in the present embodiment indicates a value at a measurement angle of 60 ° measured according to ASTM-D523. The glossiness can be measured using, for example, a digital glossiness meter (20 °, 60 °) (GM-26 type, manufactured by Murakami Color Research Laboratory Co., Ltd.).

  When the glossiness is within the above range, the insulating portion 6 and the heat radiating metal plate 7 can be bonded more firmly. The reason for this is not necessarily clear, but the surface layer 76 has a more reliable messy structure, and the anchor effect between the insulating portion 6 and the heat radiating metal plate 7 can be expressed more reliably and strongly. Conceivable.

  Moreover, when the insulating part 6 is comprised with the hardened | cured material of the 1st resin composition containing a filler (filler) so that it may mention later, at least one part of this filler is embedded in the recessed part 75 (filling). It is preferable that Thereby, since the intensity | strength of the hardened | cured material of the 1st resin composition formed in the recessed part 75 can be improved, the thermal radiation metal plate 7 and the insulation part 6 can be joined more firmly.

  Furthermore, the upper surface 72 of the heat radiating metal plate 7 constitutes a joint surface with the resin layer 5. The heat radiating metal plate 7 preferably has a surface layer 76 including the recess 75 formed on the upper surface 72 in addition to the surface layer 76 including the recess 75 formed on the side surface 71. Thereby, since the heat radiating metal plate 7 and the resin layer 5 can be firmly joined, it is possible to more reliably prevent the heat radiating metal plate 7 from falling off the circuit board 10.

Further, the linear expansion coefficient α _R in the range from 25 ° C. to the glass transition temperature of the insulating part 6 and the linear expansion coefficient α _M in the range from 25 ° C. of the heat radiating metal plate 7 to the glass transition temperature of the insulating part 6 are used. In this case, the absolute value of the difference (α _R −α _M ) between the linear expansion coefficient α _R and the linear expansion coefficient α _M is preferably 25 ppm / ° C. or less, more preferably 10 ppm / ° C. or less. If the difference in the linear expansion coefficient is equal to or less than the upper limit, it is possible to suppress thermal stress due to the difference in linear expansion coefficient that occurs when the circuit board 10 is exposed to a high temperature. Therefore, if the difference in the linear expansion coefficient is not more than the above upper limit value, the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 can be maintained even at a high temperature. That is, if the difference in the linear expansion coefficient is not more than the upper limit value, the dimensional stability of the circuit board 10 at a high temperature can be improved.

In the present embodiment, when the linear expansion coefficient has anisotropy, an average value thereof is represented. For example, when the insulating portion 6 is in the form of a sheet, when the linear expansion coefficient in the flow direction (MD) and the linear expansion coefficient in the vertical direction (TD) are different from each other, the average value thereof is the linear expansion coefficient α of the insulating portion 6. _R.

Further, as shown in FIG. 2, in the present embodiment, the size (area S ₇ ) of the heat radiating metal plate 7 is larger than the size (area S ₁ ) of the semiconductor device 1 in plan view of the base material 8. . That is, the first region 15 where the heat radiating metal plate 7 is located includes a region where the semiconductor device 1 is mounted in a plan view of the base material 8. Furthermore, in plan view, the region where the semiconductor device 1 is mounted and the first region 15 where the heat radiating metal plate 7 is located are each rectangular. Their centers overlap each other. That is, the region where the semiconductor element is mounted and the first region 15 are arranged concentrically.

  Thereby, the freedom degree of design at the time of setting the position of the terminal with which the wiring 4 is provided, for example, when determining the arrangement position with respect to the heat radiating metal plate 7 of the semiconductor device 1 is improved. Moreover, since the heat from the semiconductor device 1 can be diffused and dissipated by the heat radiating metal plate 7, the heat radiating efficiency by the heat radiating metal plate 7 can be improved.

Further, as shown in FIG. 1, the heat dissipation thickness of the metal plate 7 (average thickness) t ₇ and the thickness of the wiring 4 (average thickness) and t ₄ are different from each other. That is, the thickness t ₇ of the heat radiating metal plate 7 is greater than the thickness t ₄ of the wire 4. Thereby, the improvement of the thermal radiation efficiency by the thermal radiation metal plate 7 can be aimed at reliably.

The thickness _{t 4,} is not particularly limited, for example, 3 [mu] m or more, preferably 120μm or less, 5 [mu] m or more, and more preferably not more than 70 [mu] m. By setting the thickness of the wiring 4 in such a numerical range, the function as the heat receiving plate can be improved while ensuring the conductivity that functions as the wiring 4.

The thickness _{t 7,} but are not limited to, for example, 1 mm or more, preferably 3mm or less, 1.5 mm or more, and more preferably not more than 2.5 mm. By setting the thickness of the heat radiating metal plate 7 in such a numerical range, the function as a heat radiating plate can be improved.

  Combined with the thickness relationship as described above and the inclusion relationship (positional relationship) in plan view, the heat generated in the semiconductor device 1 reaches the heat radiating metal plate 7 from the wiring 4 until it reaches the heat radiating metal plate 7. Will spread over as wide a range as possible. As a result, the heat radiating metal plate 7 radiates heat quickly, that is, the heat radiating efficiency is improved.

  Examples of the constituent material of the heat radiating metal plate 7 include various metal materials such as copper, a copper-based alloy, aluminum, and an aluminum-based alloy. Among these, it is preferable that the constituent material of the heat radiating metal plate 7 is aluminum or an aluminum alloy. Such a metal material has a relatively high thermal conductivity, and the heat dissipation efficiency of the heat generated by the semiconductor device 1 can be improved.

  When the heat radiating metal plate 7 is made of aluminum or an aluminum alloy and the wiring 4 is made of copper or a copper alloy, the wiring 4 has a higher thermal conductivity than the heat radiating metal plate 7. Thereby, when the heat generated in the semiconductor device 1 is transmitted to the wiring 4, the heat quickly reaches the heat radiating metal plate 7 through the resin layer 5 without diffusing widely in the wiring 4. Then, the heat reaching the heat radiating metal plate 7 is released to the outside of the heat radiating metal plate 7 while diffusing in the heat radiating metal plate 7. Therefore, further improvement in heat dissipation efficiency is achieved.

  The heat conductivity of the heat radiating metal plate 7 is preferably 15 W / m · K or more and 500 W / m · K or less, 200 W / m · K (aluminum) or more, 400 W / m · K or less (copper). It is more preferable that

  The insulating portion 6 is provided on the lower surface of the resin layer 5 and is formed in the second region 16 on the lower surface of the resin layer 5 excluding the first region 15 in plan view of the base material 8. That is, the heat dissipation metal plate 7 is formed in the second region 16 on the lower surface of the resin layer 5 where the heat dissipation metal plate 7 is not located.

  Thereby, the insulation in the 2nd area | region 16 in which the thermal radiation metal plate 7 of the lower surface of the base material 8 is not located is ensured. Moreover, the intensity | strength as the base material 8 whole is ensured.

  Moreover, the insulation part 6 has a heat insulation effect. Therefore, the heat transmitted from the semiconductor device 1 and radiated by the heat radiating metal plate 7 can be blocked by the insulating portion 6. Here, since the insulating part 6 is joined to the resin layer 5 with excellent adhesion, it is possible to prevent the insulating part 6 from being detached from the circuit board 10. Furthermore, since the heat radiating metal plate 7 is firmly bonded to the insulating portion 6 bonded to the resin layer 5 with excellent adhesion, it is possible to prevent the heat radiating metal plate 7 from falling off the circuit board 10. Thereby, the effect mentioned above of the insulating part 6 and the heat radiating metal plate 7 can be exhibited reliably. Therefore, it is possible to reliably suppress or prevent the heat from being transmitted to the semiconductor device 1 via the resin layer 5 and the wiring 4 positioned corresponding to the second region. Further, it is possible to accurately suppress or prevent adverse effects caused by the transfer of heat to other electronic components mounted on the wiring 4 (circuit board 10) positioned corresponding to the second region. can do. As described above, the circuit board 10 of the present invention can efficiently dissipate heat generated from the semiconductor device 1 (heating element) to be mounted.

Incidentally, as shown in FIG. 1, the thickness of the heat radiating metal plate 7 (average thickness) The thickness of t ₇ and the insulating part 6 (average thickness) is the same. Thereby, a flat surface is constituted by the lower surface of the heat radiating metal plate 7 and the lower surface of the insulating portion 6.

  In this invention, this insulating part 6 is comprised with the hardened | cured material of the 1st resin composition containing a thermosetting resin (1st thermosetting resin). Note that the first resin composition is different from the second resin composition described above.

  By configuring the insulating part 6 with such a cured product, the difference in the coefficient of thermal expansion between the resin layer 5 and the insulating part 6 can be set small. Accordingly, when the semiconductor element of the semiconductor device 1 is driven, the semiconductor device 1 itself generates heat, and the resin layer 5 and the insulating portion 6 are heated. However, the warp between the resin layer 5 and the insulating portion 6 occurs. It is possible to accurately suppress or prevent the occurrence of peeling due to this.

  As described above, in the circuit board 10 of the present embodiment, the resin layer 5 preferably exhibits excellent thermal conductivity, and the insulating portion 6 preferably exhibits excellent heat insulation effect. Thus, from the viewpoint of expressing different effects between the resin layer 5 and the insulating portion 6, the second resin composition that forms the resin layer 5 and the first resin composition that forms the insulating portion 6 are: Preferably they are different. Thereby, both the characteristics of the resin layer 5 and the insulating part 6 can be expressed more remarkably. That is, the resin layer 5 can efficiently transfer the heat from the semiconductor device 1 to the heat radiating metal plate 7, and the insulating portion 6 can transfer the heat radiated from the heat radiating metal plate 7 to the semiconductor device 1 or the semiconductor. Transmission to another electronic component mounted on the wiring 4 other than the device 1 can be suppressed or prevented accurately. As a result, the reliability of the heating element mounting substrate 50 can be improved.

Hereinafter, the first resin composition will be described.
The thermosetting resin (first thermosetting resin) is not particularly limited. For example, a phenol resin, an epoxy resin, a urea (urea) resin, a resin having a triazine ring such as a melamine resin, an unsaturated polyester resin, A bismaleimide (BMI) resin, a polyurethane resin, a diallyl phthalate resin, a silicone resin, a resin having a benzoxazine ring, a cyanate ester resin, and the like can be given, and one or more of these can be used in combination. Among them, the phenol resin has good fluidity. Therefore, the fluidity of the first resin composition can be improved, and the insulating portion 6 can be surrounded so as to surround the heat radiating metal plate 7 in a plan view of the base material 8 without depending on the shape of the heat radiating metal plate 7. Can be formed. Moreover, the adhesiveness of the insulating part 6 with respect to the resin layer 5 and the heat radiating metal plate 7 can be improved.

  Examples of the phenol resin include unmodified phenol novolak resin, cresol novolak resin, bisphenol A novolak resin, novolak type phenol resin such as arylalkylene type novolak resin, dimethylene ether type resole resin, methylol type resole resin and the like. And resole phenolic resins such as oil-modified resole phenolic resins modified with tung oil, linseed oil, walnut oil and the like.

  Moreover, when using a novolak-type phenol resin, the 1st resin composition contains a hardening | curing agent. Usually, hexamethylenetetramine is used as the curing agent. Further, when hexamethylenetetramine is used, its content is not particularly limited, but it is preferably 10 to 30 parts by weight, more preferably 15 to 20 parts by weight with respect to 100 parts by weight of the novolak type phenol resin. It is preferable to contain it by weight part or less. By setting the content of hexamethylenetetramine within the above range, the cured product of the first resin composition, that is, the mechanical strength and the amount of molding shrinkage of the insulating portion 6 can be improved.

  Among such phenol resins, it is preferable to use a resol type phenol resin. When a novolac type phenol resin is used as a main component, as described above, hexamethylenetetramine is usually used as a curing agent, and corrosive gas such as ammonia gas is generated when the novolac type phenol resin is cured. Therefore, there is a possibility that the heat radiating metal plate 7 is corroded due to this. Therefore, a resol type phenol resin is preferably used as compared with a novolac type phenol resin.

  Moreover, a resol type phenol resin and a novolac type phenol resin can be used in combination. Thereby, while being able to raise the intensity | strength of the insulation part 6, toughness can also be improved.

  Examples of the epoxy resin include bisphenol type epoxy resins such as bisphenol A type, bisphenol F type and bisphenol AD type, novolac type epoxy resins such as phenol novolak type and cresol novolak type, brominated bisphenol A type, bromine Brominated epoxy resin such as a fluorinated phenol novolak type, biphenyl type epoxy resin, naphthalene type epoxy resin, tris (hydroxyphenyl) methane type epoxy resin and the like. Among these, bisphenol A type epoxy resins, phenol novolac type epoxy resins, and cresol novolac type epoxy resins having a relatively low molecular weight are preferable. Thereby, workability | operativity at the time of formation of the insulation part 6 and a moldability can be made further favorable. Further, from the viewpoint of heat resistance of the insulating portion 6, a phenol novolac type epoxy resin, a cresol novolac type epoxy resin, and a tris (hydroxyphenyl) methane type epoxy resin are preferable, and a tris (hydroxyphenyl) methane type epoxy resin is particularly preferable.

  When using a tris (hydroxyphenyl) methane type epoxy resin, the number average molecular weight is not particularly limited, but is preferably 500 to 2000, and more preferably 700 to 1400.

  Moreover, when using an epoxy resin, it is preferable that a hardening | curing agent is contained in the 1st resin composition. The curing agent is not particularly limited, but examples thereof include amine compounds such as aliphatic polyamines, aromatic polyamines, and diaminediamides, acid anhydrides such as alicyclic acid anhydrides and aromatic acid anhydrides, and novolak type phenol resins. Such as polyphenol compounds and imidazole compounds. Among these, novolac type phenol resins are preferable. Thereby, handling and workability of the first resin composition are improved. Moreover, the 1st resin composition excellent in the environmental aspect can be obtained.

  In particular, when a phenol novolac type epoxy resin, a cresol novolac type epoxy resin, or a tris (hydroxyphenyl) methane type epoxy resin is used as the epoxy resin, it is preferable to use a novolac type phenol resin as the curing agent. Thereby, the heat resistance of the hardened | cured material obtained from a 1st resin composition can be improved. The addition amount of the curing agent is not particularly limited, but it is preferable that the allowable range from the theoretical equivalent ratio of 1.0 to the epoxy resin is within ± 10% by weight.

  Moreover, the 1st resin composition may contain a hardening accelerator with the said hardening | curing agent as needed. Although it does not specifically limit as a hardening accelerator, For example, an imidazole compound, a tertiary amine compound, an organic phosphorus compound, etc. are mentioned. Although content of a hardening accelerator is not specifically limited, It is preferable that it is 0.1-10 weight part with respect to 100 weight part of epoxy resins, and it is more preferable that it is 3-8 weight part.

  Moreover, it is preferable that a 1st resin composition contains the fiber reinforcement which functions as a filler (filler). Thereby, it is possible to exhibit excellent mechanical strength and excellent rigidity in the insulating portion 6 itself.

  The fiber reinforcing material is not particularly limited. For example, glass fiber, carbon fiber, aramid fiber (aromatic polyamide), poly-p-phenylenebenzobisoxazole (PBO) fiber, polyvinyl alcohol (PVA) fiber, polyethylene (PE ) Fibers, plastic fibers such as polyimide fibers, inorganic fibers such as basalt fibers, and metal fibers such as stainless steel fibers. One or more of these can be used in combination.

  Further, these fiber reinforcements may be subjected to a surface treatment with a silane coupling agent for the purpose of improving the adhesion with the thermosetting resin. Although it does not specifically limit as a silane coupling agent, For example, an aminosilane coupling agent, an epoxy silane coupling agent, a vinyl silane coupling agent etc. are mentioned, It is used combining these 1 type (s) or 2 or more types. it can.

  Of these fiber reinforcements, it is preferable to use carbon fibers or aramid fibers. Thereby, the mechanical strength of the insulating part 6 can further be improved. In particular, the use of carbon fibers can further improve the wear resistance of the insulating portion 6 when the load is high. In addition, from the viewpoint of further reducing the weight of the insulating portion 6, the fiber reinforcing material is preferably a plastic fiber such as an aramid fiber. Furthermore, from the viewpoint of improving the mechanical strength of the insulating portion 6, it is preferable to use a fiber base material such as glass fiber or carbon fiber as the fiber reinforcing material.

  The content of the fiber reinforcement in the cured product is, for example, 10% by volume or more, preferably 20% by volume or more, and more preferably 25% by volume or more with respect to the total amount of the cured product. Moreover, the upper limit of content of the fiber reinforcement with respect to hardened | cured material whole quantity is although it does not specifically limit, Preferably it is 80 volume% or less. Thereby, the mechanical strength of the insulation part 6 can be improved reliably.

  Furthermore, the 1st resin composition may contain materials other than a fiber reinforcement as a filler. Such a filler may be either an inorganic filler or an organic filler.

  As the inorganic filler, for example, one or more selected from titanium oxide, zirconium oxide, silica, calcium carbonate, boron carbide, clay, mica, talc, wollastonite, glass beads, milled carbon, graphite and the like are used. . The inorganic filler preferably contains a metal oxide such as titanium oxide, zirconium oxide, or silica. Thereby, the oxide film with which a metal oxide is provided exhibits the function as a passivating film | membrane, and can improve the acid resistance as the whole hardened | cured material.

  As the organic filler, one or more selected from polyvinyl butyral, acrylonitrile butadiene rubber (NBR), pulp, wood powder, and the like are used. The acrylonitrile butadiene rubber may be either a type having a partially crosslinked structure or a type having a carboxy-modified structure. Of these, acrylonitrile butadiene rubber is preferred from the viewpoint of further enhancing the effect of improving the toughness of the cured product.

  Furthermore, when the filler includes a plurality of types having different average particle diameters, the average particle diameter in the weight-based particle size distribution by the laser diffraction scattering type particle size distribution measurement method is 5 μm, assuming that the filler is 100% by mass as a whole. It is preferable that 70 mass% or more and 99 mass% or less of the filler (B1) exceeding is included, and it is more preferable that 85 mass% or more and 98 mass% or less are included. Thereby, the mechanical strength of the insulating part 6 obtained can be improved more reliably while improving the workability of the first resin composition. Although the upper limit of the average particle diameter of a filler (B1) is not specifically limited, For example, it is 100 micrometers or less.

  As the filler (B1), the fiber reinforcing material described above is preferably used. Furthermore, the average major axis of the filler (B1) is 5 μm or more and 50 mm or less, and the average aspect ratio of the filler (B1) is more preferably 1 or more and 1000 or less.

  The average major axis and average aspect ratio of the filler (B1) can be measured from an SEM photograph as follows, for example. That is, first, a plurality of fillers (B1) are photographed with a scanning electron microscope. From the image, 50 fillers (B1) are arbitrarily selected, and the major axis and minor axis thereof are measured. Next, the total major axis of the selected 50 fillers (B1) is divided by the number to obtain an average major axis. Similarly, the total minor axis of the selected 50 fillers (B1) is divided by the number to obtain an average minor axis. The ratio of the average major axis to the average minor axis is defined as the average aspect ratio.

  Further, when the filler includes a plurality of types having different average particle diameters, the average particle diameter in the weight-based particle size distribution by the laser diffraction scattering particle size distribution measurement method is 0. The filler (B2) that is 1 μm or more and 5 μm or less is preferably contained in an amount of 1% by mass or more and 30% by mass or less, and more preferably 2% by mass or more and 15% by mass or less. Thereby, the filler can be sufficiently embedded (existing) in the recess 75. As a result, the mechanical strength of the region where the cured product is embedded in the recess 75 can be improved more reliably.

  As the filler (B2), the above-described inorganic filler and organic filler are preferably used. Furthermore, the average major axis of the filler (B2) is preferably 0.1 μm or more and 100 μm or less, more preferably 0.2 μm or more and 50 μm or less, and the average aspect ratio of the filler (B2) is preferably 1 or more and 50 or less. Preferably they are 1 or more and 40 or less.

  The average major axis and average aspect ratio of the filler (B2) can be measured from an SEM photograph as follows, for example. That is, first, a plurality of fine fillers (B2) are photographed with a scanning electron microscope. From the image, 50 fillers (B2) are arbitrarily selected, and the major axis and the minor axis thereof are measured. Next, the total major axis of the selected 50 fillers (B2) is divided by the number to obtain an average major axis. Similarly, the total minor axis of the selected 50 fillers (B2) is divided by the number to obtain the average minor axis. The ratio of the average major axis to the average minor axis is defined as the average aspect ratio.

  In addition to the components described above, additives such as a mold release agent, a curing aid, and a pigment may be added to the first resin composition.

  Moreover, it is preferable that the filler contained in the resin layer 5 is dispersed on the insulating portion 6 side in the vicinity of the interface between the insulating portion 6 and the resin layer 5. Thereby, in the vicinity of the interface between the resin layer 5 and the insulating portion 6, the resin layer 5 and the insulating portion 6 are mixed, and the adhesion between the resin layer 5 and the insulating portion 6 is improved. Therefore, the heating element mounting substrate 50 can exhibit excellent durability.

  As described above, the heating element mounting substrate 50 shown in FIG. 1 on which the semiconductor device 1 is mounted as a heating element can be obtained by mounting the semiconductor device 1 on the circuit board 10. Instead of the wiring 4, a metal foil 4 </ b> A having a flat plate shape (sheet shape) can be obtained using a metal foil-clad substrate 10 </ b> A provided on the upper surface (the other surface) of the base material 8. The metal foil-clad substrate 10A is manufactured by the following method for manufacturing the metal foil-clad substrate 10A.

(Manufacturing method of metal foil-clad substrate)
4 and 5 are views for explaining a method of manufacturing a metal foil-clad substrate used for manufacturing the heating element mounting substrate of FIG. In the following, for convenience of explanation, the upper side in FIGS. 4 and 5 is also referred to as “upper” and the lower side is also referred to as “lower”. 4 and 5, the metal foil-clad substrate and its respective parts are schematically illustrated in an exaggerated manner, and the sizes and ratios of the metal foil-clad substrate and its respective parts are greatly different from actual ones.

[1]
First, a flat metal foil 4A is prepared, and then a resin layer forming layer (hereinafter simply referred to as “layer”) 5A is formed on the metal foil 4A as shown in FIG.

  This layer 5A is obtained by supplying the second resin composition having the varnish shape described above in a layer form on the metal foil 4A, and then drying the second resin composition. And this layer 5A turns into the resin layer 5 by hardening or solidifying through the process [2] and process [3] which are mentioned later.

  The supply of the second resin composition to the metal foil 4A can be performed using, for example, a comma coater, a die coater, a gravure coater, or the like.

The second resin composition preferably has the following viscosity behavior.
That is, when the temperature of the second resin composition is raised to a molten state with a dynamic viscoelasticity measuring device under conditions of an initial temperature of 60 ° C., a temperature increase rate of 3 ° C./min, and a frequency of 1 Hz, The behavior is such that the melt viscosity decreases at the beginning of the temperature rise, and the melt viscosity increases after reaching the minimum melt viscosity. Such minimum melt viscosity is preferably in the range of 1 × 10 ³ Pa · s to 1 × 10 ⁵ Pa · s.

  When the minimum melt viscosity is not less than the above lower limit value, the resin material and the filler can be separated, and only the resin material can be prevented from flowing, and more homogeneous by passing through the steps [2] and [3]. The resin layer 5 can be obtained. Moreover, the wettability to the metal foil 4A of a 2nd resin composition can be improved as the minimum melt viscosity is below the said upper limit, and the adhesiveness of the resin layer 5 and the metal foil 4A can be improved further.

  These synergistic effects can further improve the heat dissipation and dielectric breakdown voltage of the metal foil-clad substrate 10A (circuit board 10).

  The second resin composition preferably has a temperature at which the minimum melt viscosity is reached in the range of 60 ° C. or higher and 100 ° C. or lower, and more preferably in the range of 75 ° C. or higher and 90 ° C. or lower. .

  Furthermore, the flow rate of the second resin composition is preferably 15% or more and less than 60%, and more preferably 25% or more and less than 50%.

  This flow rate can be measured by the following procedure. That is, first, a metal foil having a resin layer formed of the second resin composition of the present embodiment is cut into a predetermined size (50 mm × 50 mm). Thereafter, 5 to 7 cut metal foils are laminated to obtain a laminate. Next, the weight (weight before measurement) of the laminate is measured. Next, after pressing a laminated body for 5 minutes between the hot plates which hold | maintained internal temperature at 175 degreeC, the pressed laminated body is cooled. The resin flowing out from the pressed laminate is carefully dropped, and the weight of the cooled laminate (measured weight) is measured again. The flow rate can be obtained by the following formula (I).

Flow rate (%) = (weight before measurement−weight after measurement) / (weight before measurement−weight of metal foil) (I)
When the second resin composition has such a viscosity behavior, when the second resin composition is heated and cured to form the resin layer 5, air enters the second resin composition. Can be suppressed. Moreover, the gas dissolved in the second resin composition can be sufficiently discharged to the outside. As a result, generation of bubbles in the resin layer 5 can be suppressed, and heat can be reliably transmitted from the metal foil 4 </ b> A to the resin layer 5. Further, by suppressing the generation of bubbles, the insulation reliability of the metal foil-clad substrate 10A (circuit board 10) can be enhanced. Moreover, the adhesiveness of the resin layer 5 and metal foil 4A can be improved.

  These synergistic effects can further improve the heat dissipation of the metal foil-clad substrate 10A (circuit board 10), and as a result, the heat cycle characteristics of the metal foil-clad substrate 10A can be further improved.

  The second resin composition having such a viscosity behavior includes, for example, the type and amount of the resin material described above, the type and amount of the filler, and, if the resin material contains a phenoxy resin, the type and amount thereof. Can be obtained by adjusting as appropriate. In particular, the use of a resin having good fluidity such as a naphthalene type epoxy resin as the epoxy resin makes it easy to obtain the above viscosity characteristics.

[2]
[2-1] First, the heat radiating metal plate 7 is prepared.
Here, as described above, the heat radiating metal plate 7 has the protrusions 73. Further, the heat radiating metal plate 7 has a surface layer 76 having a recess 75 formed on each of a side surface 71 that is a bonding surface with the insulating portion 6 and an upper surface 72 that is a bonding surface with the resin layer 5. Preferably it is. Hereinafter, the case where the heat radiating metal plate 7 provided with the surface layer 76 on the entire surface of the heat radiating metal plate 7 including the side surface 71 and the upper surface 72 is described as an example.

  The surface layer 76 can be formed, for example, by chemically treating the surface of a metal member (a heat dissipating metal plate not having the surface layer 76) using a surface treatment agent.

  Here, the heat-dissipating metal plate 7 having the surface layer 76 including the concave portions 75 may be, for example, conditions: (1) a combination of a metal member and a surface treatment agent, (2) temperature and time of chemical treatment, and (3) chemical It can be obtained by highly controlling post-treatment of the surface of the metal member after treatment. In order to obtain the surface layer 76 that can improve the bonding strength between the insulating portion 6 and the heat radiating metal plate 7 more reliably, it is particularly important to control these conditions to a high degree.

  Hereinafter, a method for forming the heat radiating metal plate 7 having the surface layer 76 using the surface treating agent will be described in detail.

  First, (1) a combination of a heat radiating metal plate (metal member) not having the surface layer 76 and a surface treatment agent is selected.

  Here, when using a metal member composed of iron or stainless steel, as the surface treatment agent, for example, an aqueous solution in which an inorganic acid, a chlorine ion source, a cupric ion source, and a thiol compound are combined as necessary. It is preferable to select.

  When using a metal member composed of aluminum or an aluminum alloy, as the surface treatment agent, for example, an aqueous solution in which an alkali source, an amphoteric metal ion source, a nitrate ion source, and a thio compound are combined as necessary is selected. Is preferred.

  Furthermore, when using a metal member composed of magnesium or a magnesium alloy, for example, an alkali source is used as the surface treatment agent, and it is particularly preferable to select an aqueous solution of sodium hydroxide.

  In addition, when using a metal member composed of copper or a copper alloy, examples of the surface treatment agent include inorganic acids such as nitric acid and sulfuric acid, organic acids such as unsaturated carboxylic acids, persulfates, hydrogen peroxide, and imidazole. And derivatives thereof, tetrazole and derivatives thereof, aminotetrazole and derivatives thereof, azoles such as aminotriazole and derivatives thereof, pyridine derivatives, triazines, triazine derivatives, alkanolamines, alkylamine derivatives, polyalkylene glycols, sugar alcohols, cupric It is preferable to select an aqueous solution using at least one selected from an ion source, a chlorine ion source, a phosphonic acid chelating agent, an oxidizing agent, and N, N-bis (2-hydroxyethyl) -N-cyclohexylamine.

  Next, (2) a heat radiating metal plate (metal member) on which protrusions 73 are formed in advance is immersed in a surface treatment agent, and the metal member surface is chemically treated. At this time, the processing temperature is, for example, 30 ° C. Further, the treatment time is appropriately determined depending on the material and surface state of the metal member to be selected, the type and concentration of the surface treatment agent, the treatment temperature, and the like. The processing time is, for example, 30 seconds or more and 300 seconds or less. At this time, it is important that the etching amount in the depth direction of the concave portion formed on the surface of the metal member is preferably 3 μm or more, more preferably 5 μm or more. The etching amount in the depth direction of the metal member can be evaluated by calculating from the weight, specific gravity and surface area of the dissolved metal member. The etching amount in the depth direction can be adjusted by the type and concentration of the surface treatment agent, the treatment temperature, the treatment time, and the like.

  In the present embodiment, the thickness of the surface layer 76, the average depth of the concave portions 75, the specific surface area, the glossiness, Ra, Rz, and the like can be adjusted by adjusting the etching amount in the depth direction.

  Next, (3) post-treatment is performed on the surface of the metal member after chemical treatment. First, the metal member surface is washed with water and dried. Next, the chemically treated metal member surface is treated with an aqueous nitric acid solution or the like.

  By passing through the above process, the heat radiating metal plate 7 having the surface layer 76 having the recess 75 is obtained.

  [2-2] Next, as shown in FIG. 4B, the metal foil 4A and the heat radiating metal plate 7 are pressurized and heated so as to approach each other through the layer 5A.

  Thereby, the heat radiating metal plate 7 is bonded to the layer 5 </ b> A corresponding to the first region 15 (see FIG. 4C).

  Here, when the heat-dissipating metal plate 7 has the surface layer 76 provided with the recessed part 75 formed in the upper surface 72 which is a joining surface with the layer 5A, since the recessed part 75 can be filled with the layer 5A. The heat radiating metal plate 7 and the layer 5A can be firmly bonded.

  At this time, when the layer 5A has thermosetting properties, the layer 5A is preferably heated and pressed under conditions of uncured or semi-cured, more preferably semi-cured. Further, when the layer 5A has thermoplasticity, the layer 5A is heated and pressurized under the condition that it is solidified by cooling after being melted by heating and pressing.

  The heating and pressurizing conditions are set as follows, although they vary slightly depending on, for example, the type of the second resin composition contained in the layer 5A.

  That is, the heating temperature is preferably set to about 80 to 200 ° C, more preferably about 170 to 190 ° C.

  Moreover, the pressure to pressurize becomes like this. Preferably it is about 0.1-3 MPa, More preferably, it is set to about 0.5-2 MPa.

  Furthermore, the heating and pressurizing time is preferably about 10 to 90 minutes, more preferably about 30 to 60 minutes.

  Thereby, the lower surface of the heat radiating metal plate 7 is joined to the layer 5A, and as a result, the heat radiating metal plate 7 is bonded to the layer 5A.

  In addition, when layer 5A has thermosetting, selection of whether layer 5A is uncured or semi-cured is performed as follows. For example, in this step [2], when priority is given to bonding the heat-dissipating metal plate 7 to the layer 5A, the layer 5A is set in a semi-cured state. On the other hand, in the next step [3], when priority is given to improving the adhesion at the interface between the resin layer 5 and the insulating portion 6, the layer 5A is set in an uncured state.

[3]
Next, the insulating portion 6 is formed on the layer 5A so as to surround the heat radiating metal plate 7 in a plan view of the layer 5A.

  That is, the insulating portion 6 is formed so as to cover the second region 16 where the heat radiating metal plate 7 is not located on the upper surface of the layer 5A.

  Furthermore, at this time, when the layer 5A has thermosetting properties, the resin layer 5 is formed by curing the layer 5A. When the layer 5A has thermoplasticity, the resin layer 5 is formed by melting and then solidifying the layer 5A again (see FIG. 4D).

  Here, the heat radiating metal plate 7 has a protrusion 73 protruding from a side surface 71 which is a joint surface with the insulating portion 6. Therefore, the heat radiating metal plate 7 can be engaged with the insulating portion 6, and the heat radiating metal plate 7 and the insulating portion 6 can be firmly joined. Furthermore, when the heat radiating metal plate 7 has the surface layer 76 including the concave portion 75 formed on the side surface 71 which is a joint surface with the insulating portion 6, the insulating portion 6 can be filled in the concave portion 75. The heat radiating metal plate 7 and the insulating portion 6 can be bonded more firmly.

  A method for forming the insulating portion 6 is not particularly limited. For example, in a state where the first resin composition is melted, the second region 16 on the upper surface of the layer 5A where the heat radiating metal plate 7 is not located is covered. A method of forming the first resin composition in a molten state after supplying the first resin composition to the upper surface side of the layer 5A. According to such a method, the insulating portion 6 can be formed in a position-selective manner with excellent accuracy with respect to the second region 16 on the upper surface of the layer 5A.

Hereinafter, the case where the insulating part 6 is formed by this method will be described in detail.
In addition, as a 1st resin composition, any of granular form (pellet form), a sheet form, a strip form, or a tablet form may be sufficient. Below, the case where the 1st resin composition which makes | forms a tablet shape is used is demonstrated to an example.

  [3-1] First, as shown in FIG. 5, a layer (storage space) 121 formed by superposing an upper mold 110 and a lower mold 120 included in the molding die 100 is bonded onto the layer 5A. The radiating metal plate 7 is accommodated so that the radiating metal plate 7 is on the upper side. Thereafter, the upper mold 110 and the lower mold 120 are clamped.

  At this time, the lower opening of the supply path 113 and the heat dissipation metal plate 7 do not overlap with each other in the thickness direction of the heat dissipation metal plate 7, and the lower surface of the upper mold 110 and the upper surface of the heat dissipation metal plate 7 are mutually connected. The heat radiating metal plate 7 bonded on the layer 5 </ b> A is accommodated in the cavity 121 so as to be in contact with each other. Thereby, the insulating part 6 formed in a post process can be formed so that the thickness of the insulating part 6 is the same as the thickness of the heat radiating metal plate 7. That is, the insulating portion 6 is not formed on the upper surface of the heat radiating metal plate 7, and the second surface of the upper surface of the layer 5 </ b> A is configured such that the upper surface of the insulating portion 6 and the upper surface of the heat radiating metal plate 7 constitute a flat surface. The insulating portion 6 can be selectively provided in the region 16.

  And the 1st resin composition 130 which makes | forms a tablet shape is accommodated in the pot 111 with which the upper mold | type 110 is provided.

  [3-2] Next, the molding die 100 is heated, and the plunger 112 is inserted into the pot 111 while the first resin composition 130 in the pot 111 is heated and melted. Thereby, the 1st resin composition 130 is pressurized.

  Thereby, the 1st resin composition 130 made into the molten state is transferred in the cavity 121 through the supply path 113.

  [3-3] Next, by inserting the plunger 112 into the pot 111, the molten first resin composition 130 is heated and pressurized with the metal foil 4 </ b> A housed in the cavity 121. The cavity 121 is filled so as to cover the layer 5 </ b> A located in the second region 16.

  Then, the insulating portion 6 is formed by curing the melted first resin composition 130. Thus, the insulating portion 6 is formed so as to surround the heat radiating metal plate 7 in a plan view of the layer 5A.

  When the layer 5A has thermosetting properties, the resin layer 5 is formed by curing the layer 5A by this heating and pressurization. When the layer 5A has thermoplasticity, after the layer 5A is melted, the layer 5A is cooled and solidified again, whereby the resin layer 5 is formed.

  When the heat-dissipating metal plate 7 has a structure having a surface layer 76 having a recess 75 formed on the side surface 71, the recess 6 is formed when the insulating portion 6 is formed under such heating and pressurization conditions. Insulating part 6 can be filled in 75.

  The heating and pressurizing conditions in this step are not particularly limited, but are set as follows, for example.

  That is, the heating temperature is preferably set to about 80 to 200 ° C, more preferably about 170 to 190 ° C.

  Moreover, the pressure to pressurize becomes like this. Preferably it is about 2-10 Mpa, More preferably, it is set to about 3-7 Mpa.

  Furthermore, the heating and pressurizing time is preferably about 1 to 60 minutes, and more preferably about 3 to 15 minutes.

  By setting the temperature, pressure, and time under such conditions, the filler contained in the resin layer 5 is dispersed on the insulating portion 6 side in the vicinity of the interface between the resin layer 5 and the insulating portion 6, and the resin layer 5 and the insulating portion 6. The resin layer 5 and the insulating part 6 are formed in a state where the two are mixed. Therefore, the adhesion between the resin layer 5 and the insulating portion 6 can be improved.

  Further, the melt viscosity of the first resin composition 130 is preferably about 10 to 3000 Pa · s, and more preferably about 30 to 2000 Pa · s at 175 ° C. Thereby, the insulating part 6 can be more reliably formed so as to surround the heat radiating metal plate 7 in a plan view of the resin layer 5.

  The melt viscosity at 175 ° C. can be measured, for example, by a thermal fluid evaluation device (flow tester) manufactured by Shimadzu Corporation.

  In addition, it is preferable that the metal foil 4 </ b> A is pressed against the bottom surface of the cavity 121 provided in the lower mold 120 by the pressure generated by inserting the plunger 112 into the pot 111. Thereby, the melt | dissolution with respect to the lower surface of 4 A of metal foil of the 1st resin composition 130 is prevented. As a result, the formation of the insulating portion 6 on the lower surface of the metal foil 4A is accurately prevented. Therefore, it is possible to prevent the wiring 4 obtained by patterning the metal foil 4 </ b> A from being covered with the insulating portion 6. As a result, the electrical connection between the electronic component including the semiconductor device 1 and the wiring 4 can be prevented from being hindered. The metal foil-clad substrate 10A is manufactured through the steps as described above.

  Further, the metal foil 4A included in the metal foil-clad substrate 10A is patterned to form the wiring 4 having terminals that are electrically connected to the connection terminals 12 included in the semiconductor device 1. Thereby, the circuit board 10 in which the wiring 4 is formed on the base material 8 is manufactured. In addition, it does not specifically limit as a method of patterning metal foil 4A, For example, the following methods are mentioned. A resist layer corresponding to the pattern (shape) of the wiring 4 to be formed is formed on the metal foil 4A. Thereafter, using this resist layer as a mask, metal foil 4A exposed from the opening of the resist layer is etched by wet etching or dry etching.

  In the present embodiment, a case has been described in which one metal foil-clad substrate 10A is obtained through the steps [3-1] to [3-3]. However, the present invention is not limited to such a case. For example, in the step [3-1], a joined body in which a plurality of heat radiating metal plates 7 are joined on the layer 5A is stored in the cavity 121, and then The insulating part 6 is formed around each heat radiating metal plate 7 through the steps [3-2] and [3-3]. A plurality of metal foil-clad substrates 10A may be obtained by cutting (cutting) the joined body on which the insulating portion 6 is formed in the thickness direction. This cutting may be performed after (I) the step [3-3], (II) after patterning the metal foil 4A to form a plurality of wirings 4 on the substrate 8, or (III) a plurality of It may be executed at any stage after the plurality of semiconductor devices 1 are mounted on the circuit board 10 corresponding to the wirings 4 respectively. However, it is preferable that this cutting is performed in the step (III). Thereby, the several heat generating body mounting board | substrate 50 can be manufactured collectively.

  In the present embodiment, the process [2] and the process [3] are performed in separate processes. However, the present invention is not limited to this, for example, by inserting the plunger 112 into the pot 111 in a state where the loading of the first resin composition 130 into the pot 111 is omitted, the heat dissipation metal plate If it is possible to carry out the pressing on the metal foil 4 </ b> A 7, the step [2] and the step [3] may be carried out collectively in the cavity 121.

  The heating element mounting substrate 50 having such a configuration is mounted as a substrate (one component) included in various electronic devices.

Second Embodiment
Next, a second embodiment of the heating element mounting substrate of the present invention will be described.

  FIG. 6 is a longitudinal sectional view showing a second embodiment of the heating element mounting substrate of the present invention.

  Hereinafter, the heating element mounting substrate 51 of the second embodiment will be described focusing on the differences from the heating element mounting substrate 50 of the first embodiment, and description of similar matters will be omitted.

  The heating element mounting board 51 shown in FIG. 6 is shown in FIGS. 1 and 2 except that the semiconductor device 1 is mounted on the upper surface of the circuit board 101 having a configuration different from that of the circuit board 10 of the first embodiment. This is the same as the heating element mounting substrate 50.

  That is, in the heating element mounting substrate 51 of the second embodiment, the circuit board 101 is formed on the resin layer 5, the heat radiating metal plate 7 covering the resin layer 5 corresponding to the first region 15, and the second region 16. Correspondingly, a base 81 provided with an insulating portion 6 covering the resin layer 5 and a wiring 4 provided on the upper surface of the base 81 are provided. In the heat radiating metal plate 7 included in the base material 81, as shown in FIG. 6, the protrusion 73 protrudes on the lower surface 74 side of the heat radiating metal plate 7 without protruding on the upper surface 72 side of the radiating metal plate 7. Thus, in the thickness direction of the heat radiating metal plate 7, it is unevenly distributed on the lower surface 74 side and protrudes. That is, the protrusion 73 is configured by one convex portion that protrudes along the surface direction so as to surround the side surface 71 in the surface direction (left-right direction) of the heat radiating metal plate 7. Further, the lower surface and the lower surface 74 of the protrusion 73 are located on the same plane and form a flat surface. Also with the projection 73 having such a configuration, the projection 73 functions as an engaging portion that engages with the insulating portion 6, so that the heat radiating metal plate 7 and the insulating portion 6 can be firmly joined.

  The same effect as that of the first embodiment can be obtained by the heating element mounting substrate 51 of the second embodiment.

<Third Embodiment>
Next, a third embodiment of the heating element mounting substrate of the present invention will be described.

  FIG. 7 is a longitudinal sectional view showing a third embodiment of the heating element mounting substrate of the present invention.

  Hereinafter, the heating element mounting substrate 52 of the third embodiment will be described focusing on differences from the heating element mounting substrate 50 of the first embodiment, and description of similar matters will be omitted.

  The heating element mounting substrate 52 shown in FIG. 7 is shown in FIGS. 1 and 2 except that the semiconductor device 1 is mounted on the upper surface of the circuit substrate 102 having a configuration different from the configuration of the circuit substrate 10 of the first embodiment. This is the same as the heating element mounting substrate 50.

  That is, in the heating element mounting substrate 52 of the third embodiment, the circuit board 102 is formed on the resin layer 5, the heat radiating metal plate 7 covering the resin layer 5 corresponding to the first region 15, and the second region 16. Correspondingly, a base 82 provided with an insulating portion 6 covering the resin layer 5 and a wiring 4 provided on the upper surface of the base 82 are provided. In the heat radiating metal plate 7 provided in the base material 82, as shown in FIG. 7, the protrusion 73 does not protrude on the lower surface 74 side of the heat radiating metal plate 7, but protrudes on the upper surface 72 side of the radiating metal plate 7. Thus, in the thickness direction of the heat radiating metal plate 7, it is unevenly distributed and protrudes toward the upper surface 72 side. That is, the protrusion 73 is configured by one convex portion that protrudes along the surface direction so as to surround the side surface 71 in the surface direction (left-right direction) of the heat radiating metal plate 7. Further, the upper surface and the upper surface 72 of the protrusion 73 are located on the same plane and form a flat surface. Also with the projection 73 having such a configuration, the projection 73 functions as an engaging portion that engages with the insulating portion 6, so that the heat radiating metal plate 7 and the insulating portion 6 can be firmly joined.

  The effect similar to that of the first embodiment can be obtained also by the heating element mounting substrate 52 of the third embodiment.

<Fourth embodiment>
Next, a fourth embodiment of the heating element mounting substrate of the present invention will be described.

  FIG. 8 is a longitudinal sectional view showing a fourth embodiment of the heating element mounting substrate of the present invention.

  Hereinafter, the heating element mounting substrate 53 of the fourth embodiment will be described focusing on the differences from the heating element mounting substrate 50 of the first embodiment, and description of similar matters will be omitted.

  The heating element mounting substrate 53 shown in FIG. 8 is shown in FIGS. 1 and 2 except that the semiconductor device 1 is mounted on the upper surface of the circuit substrate 103 having a configuration different from the configuration of the circuit substrate 10 of the first embodiment. This is the same as the heating element mounting substrate 50.

  That is, in the heating element mounting substrate 53 of the fourth embodiment, the circuit board 103 is formed on the resin layer 5, the heat dissipation metal plate 7 covering the resin layer 5 corresponding to the first region 15, and the second region 16. Correspondingly, a base 83 provided with an insulating portion 6 covering the resin layer 5 and a wiring 4 provided on the upper surface of the base 83 are provided. In the heat radiating metal plate 7 provided in the base 83, the protrusion 73 has a first protrusion 731 and a second protrusion 732 as shown in FIG. 8. Specifically, the first protrusion 731 does not protrude on the upper surface 72 side of the heat radiating metal plate 7 but protrudes on the lower surface 74 side of the heat radiating metal plate 7, so that in the thickness direction of the heat radiating metal plate 7, It projects unevenly on the lower surface 74 side. Further, the second protrusion 732 protrudes on the upper surface 72 side of the heat radiating metal plate 7 without protruding on the lower surface 74 side of the heat radiating metal plate 7, whereby the upper surface 72 in the thickness direction of the heat radiating metal plate 7. It is unevenly distributed on the side and protrudes. That is, the protrusion 73 is composed of two protrusions including a first protrusion 731 and a second protrusion 732 that protrude along the surface direction so as to surround the side surface 71 in the surface direction (left-right direction) of the heat radiating metal plate 7. Has been. In addition, the lower surface and the lower surface 74 of the first protrusion 731 are located on the same plane and form a flat surface. Further, the upper surface and the upper surface 72 of the second protrusion 732 are located on the same plane and form a flat surface. Also with the projection 73 having such a configuration, the projection 73 functions as an engaging portion that engages with the insulating portion 6, so that the heat radiating metal plate 7 and the insulating portion 6 can be firmly joined.

  The same effect as that of the first embodiment can be obtained by the heating element mounting substrate 53 of the fourth embodiment.

<Fifth Embodiment>
Next, a fifth embodiment of the heating element mounting substrate of the present invention will be described.

  FIG. 9 is a longitudinal sectional view showing a fifth embodiment of the heating element mounting substrate of the present invention.

  Hereinafter, the heating element mounting substrate 54 of the fifth embodiment will be described focusing on differences from the heating element mounting substrate 50 of the first embodiment, and description of similar matters will be omitted.

  The heating element mounting board 54 shown in FIG. 9 is shown in FIGS. 1 and 2 except that the semiconductor device 1 is mounted on the upper surface of the circuit board 104 having a configuration different from that of the circuit board 10 of the first embodiment. This is the same as the heating element mounting substrate 50.

  That is, in the heating element mounting substrate 54 of the fifth embodiment, the circuit board 104 is formed on the resin layer 5, the heat radiating metal plate 7 covering the resin layer 5 corresponding to the first region 15, and the second region 16. Correspondingly, a base 84 provided with an insulating portion 6 covering the resin layer 5 and a wiring 4 provided on the upper surface of the base 84 are provided. In the heat radiating metal plate 7 provided in the base member 84, as shown in FIG. 9, the protrusion 73 surrounds the side surface 71 in the surface direction of the heat radiating metal plate 7, and the surface direction is in the middle of the thickness direction. It is comprised by one convex part which protrudes along. The thickness of the protrusion 73 continuously changes (gradually decreases) toward the top side. In other words, in the present embodiment, the upper surface and the lower surface of the protrusion 73 are configured as inclined surfaces. Also with the projection 73 having such a configuration, the projection 73 functions as an engaging portion that engages with the insulating portion 6, so that the heat radiating metal plate 7 and the insulating portion 6 can be firmly joined.

  The effect similar to that of the first embodiment can be obtained by the heating element mounting substrate 54 of the fifth embodiment.

<Sixth Embodiment>
Next, a sixth embodiment of the heating element mounting substrate of the present invention will be described.

  FIG. 10 is a longitudinal sectional view showing a sixth embodiment of the heating element mounting substrate of the present invention, and FIG. 11 is a view showing a heat radiating metal plate included in the circuit board provided in the semiconductor device of FIG. 10 (FIG. 11A). FIG. 11B is a side view. For convenience of explanation, in FIG. 11B, the groove portion 734 located in a region where the protrusion 73 of the side surface 71 provided in the heat radiating metal plate 7 is not formed is hatched.

  Hereinafter, the heating element mounting substrate 55 of the sixth embodiment will be described focusing on the differences from the heating element mounting substrate 50 of the first embodiment, and the description of the same matters will be omitted.

  A heating element mounting board 55 shown in FIG. 10 is shown in FIGS. 1 and 2 except that the semiconductor device 1 is mounted on the upper surface of the circuit board 105 having a configuration different from that of the circuit board 10 of the first embodiment. This is the same as the heating element mounting substrate 50.

  That is, in the heating element mounting substrate 55 of the sixth embodiment, the circuit board 105 is formed on the resin layer 5, the heat radiating metal plate 7 covering the resin layer 5 corresponding to the first region 15, and the second region 16. Correspondingly, a base 85 provided with an insulating portion 6 covering the resin layer 5 and a wiring 4 provided on the upper surface of the base 85 are provided. And in the heat radiating metal plate 7 provided in this base material 85, as shown in FIG. 11, the protrusion 73 protrudes in the middle of the surface direction (left-right direction) of the heat radiating metal plate 7, that is, the direction orthogonal to the thickness direction. It is composed of a plurality of convex portions 733. Each convex portion 733 is formed until it reaches both the upper surface 72 and the lower surface 74 along the thickness direction (vertical direction) of the heat radiating metal plate 7. That is, the protrusion 73 is composed of a plurality of convex portions 733 protruding from the side surface 71 with the groove portion 734 interposed therebetween along (in parallel with) the thickness direction of the heat radiating metal plate 7. Yes. Thereby, in the side view of the heat radiating metal plate 7, the protrusion 73 has a striped shape as a whole. Also with the projection 73 having such a configuration, the projection 73 functions as an engaging portion that engages with the insulating portion 6, so that the heat radiating metal plate 7 and the insulating portion 6 can be firmly joined.

  The effect similar to that of the first embodiment can be obtained also by the heating element mounting substrate 55 of the sixth embodiment.

<Seventh embodiment>
Next, a seventh embodiment of the heating element mounting substrate of the present invention will be described.

  FIG. 12 is a longitudinal sectional view showing a seventh embodiment of the heating element mounting substrate of the present invention, and FIG. 13 is a view showing a heat radiating metal plate included in the circuit board provided in the semiconductor device of FIG. FIG. 13B is a side view. For convenience of explanation, in FIG. 13B, the groove portion 734 located in a region where the protrusion 73 of the side surface 71 provided in the heat radiating metal plate 7 is not formed is hatched.

  Hereinafter, the heating element mounting substrate 56 of the seventh embodiment will be described focusing on the differences from the heating element mounting substrate 50 of the first embodiment, and description of similar matters will be omitted.

  A heating element mounting board 56 shown in FIG. 12 is shown in FIGS. 1 and 2 except that the semiconductor device 1 is mounted on the upper surface of the circuit board 106 having a configuration different from the configuration of the circuit board 10 of the first embodiment. This is the same as the heating element mounting substrate 50.

  That is, in the heating element mounting substrate 56 of the seventh embodiment, the circuit board 106 is formed on the resin layer 5, the heat radiating metal plate 7 covering the resin layer 5 corresponding to the first region 15, and the second region 16. Correspondingly, a base 86 provided with an insulating portion 6 covering the resin layer 5 and a wiring 4 provided on the upper surface of the base 86 are provided. And in the heat radiating metal plate 7 with which this base material 86 is equipped, as shown in FIG. 13, the protrusion 73 protrudes in the middle of the surface direction (left-right direction) of the heat radiating metal plate 7, ie, the direction orthogonal to the thickness direction. It is composed of a plurality of convex portions 733. Each convex portion 733 is formed until it reaches both the upper surface 72 and the lower surface 74 along a direction inclined with respect to the thickness direction of the heat radiating metal plate 7. That is, the protrusion 73 is a plurality of protrusions protruding from the side surface 71 with the groove portion 734 interposed therebetween along (in parallel with) the direction inclined with respect to the thickness direction of the heat radiating metal plate 7. Part 733. Therefore, the protrusion 73 has a striped shape as a whole in the side view of the heat radiating metal plate 7. Also with the projection 73 having such a configuration, the projection 73 functions as an engaging portion that engages with the insulating portion 6, so that the heat radiating metal plate 7 and the insulating portion 6 can be firmly joined.

  In the present embodiment, as shown in FIG. 13B, each convex portion 733 is inclined rightward in the left-right direction of the radiating metal plate 7 from the upper surface 72 toward the lower surface 74 side. However, each convex part 733 is not limited to this configuration, and may be inclined leftward in the left-right direction of the heat-dissipating metal plate 7 from the upper surface 72 toward the lower surface 74 side.

  The same effect as that of the first embodiment can be obtained by the heating element mounting substrate 56 of the seventh embodiment.

<Eighth Embodiment>
Next, an eighth embodiment of the heating element mounting substrate of the present invention will be described.

  FIG. 14 is a longitudinal sectional view showing an eighth embodiment of the heating element mounting substrate of the present invention, and FIG. 15 is a view showing a heat radiating metal plate included in the circuit board provided in the semiconductor device of FIG. FIG. 15B is a side view. For convenience of explanation, in FIG. 15B, the grooves 736 and 737 located in the region where the protrusion 73 of the side surface 71 provided in the heat radiating metal plate 7 is not formed are hatched.

  Hereinafter, the heating element mounting substrate 57 of the eighth embodiment will be described focusing on the differences from the heating element mounting substrate 50 of the first embodiment, and the description of the same matters will be omitted.

  A heating element mounting board 57 shown in FIG. 14 is shown in FIGS. 1 and 2 except that the semiconductor device 1 is mounted on the upper surface of the circuit board 107 having a configuration different from that of the circuit board 10 of the first embodiment. This is the same as the heating element mounting substrate 50.

  That is, in the heating element mounting substrate 57 of the eighth embodiment, the circuit board 107 is formed on the resin layer 5, the heat radiating metal plate 7 covering the resin layer 5 corresponding to the first region 15, and the second region 16. Correspondingly, a base material 87 provided with an insulating portion 6 covering the resin layer 5 and a wiring 4 provided on the upper surface of the base material 87 are provided. And in the heat radiating metal plate 7 with which this base material 87 is provided, as shown in FIG. 15, the protrusion 73 protrudes in the middle of both the thickness direction of the heat radiating metal plate 7 and the direction orthogonal to the thickness direction. Consists of a convex portion 735.

  As shown in FIG. 15 (b), each convex portion 735 includes a plurality of groove portions 736 inclined in the right direction from the upper surface 72 toward the lower surface 74 side with respect to the thickness direction of the heat radiating metal plate 7, and heat dissipation. A plurality of groove portions 737 that are inclined leftward from the upper surface 72 toward the lower surface 74 side with respect to the thickness direction of the metal plate 7 are formed at positions where the metal plate 7 does not exist. That is, each convex portion 735 has an island shape, whereby the protrusion 73 has a knurled shape as a whole in a side view of the heat radiating metal plate 7. Each of the projecting portions 735 having such an island shape has a quadrangular shape, and one pair of opposite sides is inclined rightward with respect to the thickness direction of the heat radiating metal plate 7, and the other The pair of opposing sides are inclined leftward with respect to the thickness direction of the heat radiating metal plate 7. Also with the projection 73 having such a configuration, the projection 73 functions as an engaging portion that engages with the insulating portion 6, so that the heat radiating metal plate 7 and the insulating portion 6 can be firmly joined.

  Also by the heating element mounting substrate 57 of the eighth embodiment, the same effect as that of the first embodiment can be obtained.

<Ninth Embodiment>
Next, a ninth embodiment of the heating element mounting substrate of the present invention will be described.

  FIG. 16 is a longitudinal sectional view showing a ninth embodiment of the heating element mounting substrate of the present invention, and FIG. 17 is a view showing a heat radiating metal plate included in the circuit board provided in the semiconductor device of FIG. FIG. 17B is a side view. For convenience of explanation, in FIG. 17B, the groove portion 734 located in a region where the protrusion 73 of the side surface 71 provided in the heat radiating metal plate 7 is not formed is hatched.

  Hereinafter, the heating element mounting substrate 58 of the ninth embodiment will be described focusing on differences from the heating element mounting substrate 50 of the first embodiment, and description of similar matters will be omitted.

  The heating element mounting board 58 shown in FIG. 16 is shown in FIGS. 1 and 2 except that the semiconductor device 1 is mounted on the upper surface of the circuit board 108 having a configuration different from that of the circuit board 10 of the first embodiment. This is the same as the heating element mounting substrate 50.

  That is, in the heating element mounting substrate 58 of the ninth embodiment, the circuit board 108 is formed on the resin layer 5, the heat radiating metal plate 7 covering the resin layer 5 corresponding to the first region 15, and the second region 16. Correspondingly, a base 88 provided with an insulating part 6 covering the resin layer 5 and a wiring 4 provided on the upper surface of the base 88 are provided. And in the heat radiating metal plate 7 with which this base material 88 is equipped, as shown in FIG. 17, the protrusion 73 protrudes in the middle of the surface direction (left-right direction) of the heat radiating metal plate 7, ie, the direction orthogonal to the thickness direction. It is composed of a plurality of convex portions 733. Each convex portion 733 is formed until reaching both the upper surface 72 and the lower surface 74. And each convex part 733 is changing continuously those width from the upper surface 72 side toward the lower surface 74 side. Specifically, the protrusion 73 is composed of a plurality of convex portions 733 that protrude from the side surface 71 with a groove portion 734 interposed therebetween. In addition, one of the two convex portions 733 adjacent to each other has a trapezoidal shape (tapered shape) whose width gradually decreases from bottom to top, and the other is an inverted base whose width gradually increases from bottom to top. It has a shape (reverse taper shape). Also with the projection 73 having such a configuration, the projection 73 functions as an engaging portion that engages with the insulating portion 6, so that the heat radiating metal plate 7 and the insulating portion 6 can be firmly joined.

  Also by the heating element mounting substrate 58 of the ninth embodiment, the same effect as that of the first embodiment can be obtained.

<Tenth Embodiment>
Next, a description will be given of a tenth embodiment of the heating element mounting substrate of the present invention.

  FIG. 18 is a longitudinal sectional view showing a tenth embodiment of the heating element mounting substrate of the present invention, and FIG. 19 is a view (plan view) seen from the direction of arrow A in FIG.

  Hereinafter, the heating element mounting substrate 59 of the tenth embodiment will be described focusing on the differences from the heating element mounting substrate 50 of the first embodiment, and description of similar matters will be omitted.

  A heating element mounting board 59 shown in FIG. 18 is shown in FIGS. 1 and 2 except that the semiconductor device 1 is mounted on the upper surface of the circuit board 109 having a configuration different from that of the circuit board 10 of the first embodiment. This is the same as the heating element mounting substrate 50.

  That is, in the heating element mounting substrate 59 of the tenth embodiment, the circuit board 109 includes the resin layer 5 and the heat radiating metal plate 7 that covers the resin layer 5 corresponding to the first region 15 in plan view of the resin layer 5. The substrate 89 includes an insulating portion 6 that covers the resin layer 5 corresponding to the second region 16, and the wiring 4 provided on the upper surface of the substrate 89. The semiconductor device 1 is mounted on the wiring 4 included in the substrate 89 in a state in which the semiconductor device 1 is electrically connected to the wiring 4 (terminal) at the connection terminal 12. Moreover, in this embodiment, as shown in FIG. 19, one side surface 71 of the four side surfaces 71 of the heat radiating metal plate 7 is exposed from the base material 89 (circuit board 109). In addition, the side surface 71 exposed from the base material 89 of the heat radiating metal plate 7 and the side surface of the base material 89 are located on the same plane.

  As described above, in the present embodiment, one (one side) of the four side surfaces 71 of the heat radiating metal plate 7 is exposed without being joined to the insulating portion 6. However, even in such a configuration, the heat radiating metal plate 7 has a configuration in which the side surface 71 has the projection 73, and thus the projection 73 can be engaged with the insulating portion 6 in the remaining three side surfaces 71. Therefore, the heat radiating metal plate 7 and the insulating portion 6 can be firmly joined.

  The effect similar to that of the first embodiment can be obtained by the heating element mounting substrate 59 of the tenth embodiment.

<Eleventh embodiment>
Next, an eleventh embodiment of the heating element mounting substrate of the present invention will be described.

  FIG. 20 is a longitudinal sectional view showing an eleventh embodiment of the heating element mounting substrate of the present invention, and FIG. 21 is a view (plan view) seen from the direction of arrow A in FIG.

  Hereinafter, the heating element mounting substrate 61 of the eleventh embodiment will be described focusing on the differences from the heating element mounting substrate 50 of the first embodiment, and description of similar matters will be omitted.

  A heating element mounting board 61 shown in FIG. 20 is shown in FIGS. 1 and 2 except that the semiconductor device 1 is mounted on the upper surface of the circuit board 151 having a configuration different from that of the circuit board 10 of the first embodiment. This is the same as the heating element mounting substrate 50.

  That is, in the heating element mounting substrate 61 of the eleventh embodiment, the circuit board 151 includes the resin layer 5 and the heat radiating metal plate 7 that covers the resin layer 5 corresponding to the first region 15 in a plan view of the resin layer 5. A base 91 provided with an insulating portion 6 covering the resin layer 5 corresponding to the second region 16 and a wiring 4 provided on the upper surface of the base 91 are provided. The semiconductor device 1 is mounted on the wiring 4 included in the base material 91 in a state where the semiconductor device 1 is electrically connected to the wiring 4 (terminal) at the connection terminal 12. In the present embodiment, as shown in FIG. 21, two opposing side surfaces 71 of the four side surfaces 71 of the heat radiating metal plate 7 are exposed from the base material 91 (the circuit board 151).

  Thus, in this embodiment, the heat radiating metal plate 7 is exposed without joining the two side surfaces 71 (two sides) facing each other among the four side surfaces 71. However, even in such a configuration, the heat radiating metal plate 7 has a configuration in which the protrusions 73 are provided on the two opposing side surfaces 71 different from the two exposed side surfaces 71. The protrusion 73 can be engaged with the insulating portion 6. Therefore, even if two opposing side surfaces 71 out of the four side surfaces are exposed, the heat radiating metal plate 7 and the insulating portion 6 can be firmly bonded.

  The heating element mounting substrate 61 of the eleventh embodiment can provide the same effects as those of the first embodiment.

<Twelfth embodiment>
Next, a twelfth embodiment in which the heating element mounting substrate of the present invention is applied to mounting of a semiconductor device will be described.

  FIG. 22 is a longitudinal sectional view showing a twelfth embodiment of the heating element mounting substrate of the present invention.

  Hereinafter, the heating element mounting substrate 62 of the twelfth embodiment will be described focusing on the differences from the heating element mounting substrate 50 of the first embodiment, and description of similar matters will be omitted.

  A heating element mounting substrate 62 shown in FIG. 22 is formed on the upper surface of a circuit board 152 having a configuration different from that of the circuit board 10 of the first embodiment, and the semiconductor device 1 ′ having a configuration different from that of the semiconductor device 1 of the first embodiment. 1 is the same as the heating element mounting substrate 50 shown in FIGS.

  That is, in the heating element mounting substrate 62 of the twelfth embodiment, the circuit board 152 includes the base material 8 and the wiring 4 ′ having an opening at a position corresponding to the position where the semiconductor device 1 ′ is mounted. The semiconductor device 1 ′ includes a semiconductor element 17, a bonding wire 18 that electrically connects the semiconductor element 17 and the wiring 4 ′, and a mold portion 19 that seals the semiconductor element 17 and the bonding wire 18. ing. The semiconductor element 17 is bonded onto the resin layer 5 at the opening of the wiring 4 ′. Further, a terminal provided in the semiconductor element 17 and a terminal provided in the wiring 4 ′ are electrically connected via the bonding wire 18. In this state, these are sealed by the mold part 19 on the upper surface side of the wiring 4 ′ so as to include the opening of the wiring 4 ′.

  In such a heating element mounting substrate 62, the semiconductor element 17 included in the semiconductor device 1 ′ is bonded to the resin layer 5 included in the base material 8, and the heat generated in the semiconductor element 17 is bonded to the semiconductor element 17. Since the heat is radiated through the resin layer 5 and the heat radiating metal plate 7, the heat radiation efficiency can be improved.

  The heating element mounting substrate 62 of the twelfth embodiment can provide the same effects as those of the first embodiment.

  In FIG. 22, the resin layer 5 is provided on the heat radiating metal plate 7 in the opening of the wiring 4 ′. Heat generated in the semiconductor element 17 is transferred to the heat radiating metal plate 7 through the resin layer 5. However, the resin layer 5 is not limited thereto, and may be omitted in the opening of the wiring 4 ′, and the semiconductor element 17 may be bonded onto the heat radiating metal plate 7. Thereby, the heat generated in the semiconductor element 17 may be directly transmitted to the heat radiating metal plate 7 without passing through the resin layer 5. With this configuration, the heat dissipation efficiency of the heat generated in the semiconductor element 17 can be further improved.

  As mentioned above, although the metal foil tension board | substrate, the circuit board, and the heat generating body mounting board | substrate of this invention were demonstrated about embodiment of illustration, this invention is not limited to these.

  For example, each part which comprises the metal foil tension board | substrate of this invention, a circuit board, and a heat generating body mounting board | substrate can be substituted by the arbitrary structures which can exhibit the same function. Moreover, arbitrary components may be added to the metal foil-clad substrate, the circuit board, and the heating element mounting substrate of the present invention.

  In the present invention, any two or more configurations shown in the first to twelfth embodiments may be combined. For example, the heat radiating metal plate may have protrusions protruding at different positions in the thickness direction on each side surface.

  Furthermore, the heating element mounting substrate of the present invention is not limited to the above-described embodiment. That is, the present invention is not limited to a heating element mounting substrate on which a semiconductor device is mounted on a circuit board as a heating element. The present invention relates to a resistor such as a thermistor as a heating element, a capacitor, a diode power MOSFET, a power transistor such as an insulated gate bipolar transistor (IGBT), a reactor, an LED (light emitting diode), an LD (laser diode), and an organic EL element. Such a light emitting element and a motor can be applied to a heating element mounting board on which a circuit board is mounted.

  Hereinafter, specific examples of the present invention will be described. The present invention is not limited to this.

1. Manufacture of test pieces Test pieces were manufactured as follows.

Example 1A
1.1 Preparation of second resin composition (varnish) [1] First, bisphenol F / bisphenol A phenoxy resin (Mitsubishi Chemical, 4275, weight average molecular weight 6.0 × 10 ⁴ , bisphenol F skeleton and bisphenol A skeleton) Ratio = 75: 25) 40.0 parts by mass, bisphenol A type epoxy resin (manufactured by DIC, 850S, epoxy equivalent 190) 55.0 parts by mass, 2-phenylimidazole (2PZ by Shikoku Chemicals) 3.0 parts by mass, As a silane coupling agent, 2.0 parts by mass of γ-glycidoxypropyltrimethoxysilane (KBM-403 manufactured by Shin-Etsu Silicone) was weighed. These were dissolved in 400 parts by mass of cyclohexanone and mixed to obtain a mixed solution. A varnish containing a resin material was obtained by stirring the mixed solution using a high-speed stirring device.

  [2] Next, 800 g of alumina (manufactured by Nippon Light Metal, average particle size A 3.2 μm, primary particle size B 3.6 μm, average particle size A / primary particle size B = 0.9 (Lot No. Z401)) Was weighed. Next, alumina was put into a plastic container containing 1300 mL of pure water to obtain an alumina solution. Thereafter, the alumina solution was stirred using a disperser having a blade having a diameter of 50 mm (“R94077” manufactured by Tokushu Kika Kogyo Co., Ltd.) under the condition of a rotational speed of 5000 rpm and a stirring time of 15 minutes. Thereby, the alumina was washed with water.

  Thereafter, the alumina solution was allowed to stand for 15 minutes to obtain a supernatant. Next, 50 mL of the supernatant was collected with a dropper and filtered to obtain a filtrate. Thereafter, the pH of the filtrate was measured. The supernatant liquid was removed by decantation until the pH value reached 7.0. Thereafter, the alumina was washed with water several times.

[3] Next, the alumina washed with water as described above was allowed to stand for 20 minutes. Thereafter, the supernatant was removed by decantation. Thereafter, 1000 mL of acetone was put into the plastic container to obtain a mixed solution of alumina and acetone. Thereafter, a mixed solution of alumina and acetone was stirred using the disperser under the conditions of a rotation speed of 800 rpm and a stirring time of 5 minutes.
And the liquid mixture of an alumina and acetone was left to stand for 12 hours, and the supernatant liquid was obtained. Thereafter, the supernatant was removed.

  [4] Next, the alumina after the supernatant was removed was transferred to a stainless steel vat. Using a fully exhausted box dryer (“PHH-200” manufactured by Tabai Co., Ltd.), the alumina was dried under the conditions of a drying temperature of 40 ° C. and a drying time of 1 hour to obtain a washed alumina (filler).

  Thereafter, the washed alumina was dried under the conditions of 200 ° C. × 24 hours and then left under the conditions of 85 ° C. × 85% RH. Thus, the moisture content of the washed alumina was set to 0.18% by mass.

  The water content of the alumina was calculated from the difference in mass between 25 ° C. and 500 ° C. measured using a differential thermal balance apparatus (TG-DTA).

  [5] Next, washed alumina (505.0 parts by mass) is applied to the varnish containing the resin material prepared in advance in the step [1] using a disperser (“R94077” manufactured by Tokushu Kika Kogyo Co., Ltd.). The mixture was mixed under the conditions of a rotational speed of 1000 rpm and a stirring time of 120 minutes. This obtained the 2nd resin composition of 83.5 weight% (60.0 volume%) of resin solid content ratio of an alumina.

1.2 Film Formation of Resin Layer Forming Layer on Metal Foil Obtained in 1.1 above on the roughened surface of a roll-shaped copper foil having a width of 260 mm and a thickness of 35 μm (manufactured by Nihon Denki, YGP-35) The second resin composition was applied with a comma coater. Next, the second resin composition was heated and dried at 100 ° C. for 3 minutes and at 150 ° C. for 3 minutes, thereby forming a resin layer forming layer (layer) having a thickness of 100 μm on the copper foil. This obtained the laminated body.

  In addition, the layer is in a semi-cured state by drying the second resin composition under such conditions. The laminate was cut into a length of 65 mm and a width of 100 mm to form a metal foil on which a layer was formed.

1.3 Preparation of first resin composition in tablet form 30 parts of dimethylene ether type resole resin (R-25 manufactured by Sumitomo Bakelite), 7 parts of methylol type resole resin (PR-51723 manufactured by Sumitomo Bakelite), novolak type resin (Sumitomo Bakelite A-1084) 4 parts, aluminum hydroxide 15 parts, glass fiber (manufactured by Nitto Boseki) 10 parts, calcined clay 12 parts, organic filler, curing accelerator, mold release agent, pigments and other 22 parts To obtain a mixture. Next, the mixture was kneaded with a heating roll to obtain a kneaded product, and the kneaded product was cooled. Thereafter, the pulverized product obtained by pulverizing the kneaded product was tableted to obtain a first resin composition having a tablet shape.

1.4 Formation of Insulating Portion on Resin Layer First, the metal foil on which the layer was formed was stored in the cavity 121 provided in the molding die 100 so that the layer was on the upper side. Then, the 1st resin composition which makes a tablet shape in the pot 111 was accommodated.

  Next, the plunger 112 was inserted into the pot 111 while the first resin composition in the pot 111 was heated and melted. Thereby, in the state which the 1st resin composition was heated and pressurized, it filled in the cavity so that the molten 1st resin composition might cover a layer. Thereby, the molten 1st resin composition was supplied on the layer.

  And the test piece of Example 1A by which the resin layer 5 and the insulation part 6 were laminated | stacked in this order on 4 A of metal foil was obtained by hardening the 1st resin composition and layer which were fuse | melted ( (See FIG. 23).

  The conditions for curing the first resin composition and the layer were set as follows.

・ Heating temperature: 175 ° C
・ Pressure during pressurization: 5.0 MPa
・ Heating / pressurizing time: 3 minutes

(Examples 2A-7A)
Implementation was performed in the same manner as in Example 1A except that the state of curing of the layer formed in 1.2 was changed as shown in Table 1 and the conditions for forming the insulating portion in 1.4 were changed as shown in Table 1. Test pieces of Examples 2A to 7A were obtained.

2. Evaluation of Test Pieces The test pieces of each Example were cut along the thickness direction. Thereafter, the vicinity of the interface between the resin layer and the insulating portion of the obtained cut surface was observed using an electron microscope.

  FIGS. 24 to 30 show electron micrographs in the vicinity of the interface of the test pieces of each Example obtained by observation with this electron microscope.

  As is apparent from the electron micrographs shown in FIGS. 24 to 30, in each example, the resin layer and the insulating part have excellent adhesion without forming a void at the interface between the resin layer and the insulating part. It was joined.

  In particular, in Examples 1A to 5A in which the layers are in a semi-cured state, the filler contained in the resin layer 5 is dispersed on the insulating portion 6 side, and the resin layer and the insulating portion are bonded with better adhesion. As a result.

  In Examples 2A, 4A, and 7A in which the pressure at the time of pressurization was 2.5 MPa, some voids were observed in the resin layer 5.

  Moreover, about Example 1A, when the thickness of the insulating part in the said cut surface was measured 20 places with the pitch 1mm space | interval, the average thickness was set to 85 +/- 10micrometer. From this measurement result, it was found that the formed insulating portion had a uniform film thickness.

3. Production of metal foil-clad substrate A metal foil-clad substrate was produced as follows.

(Example 1B)
3.1 Preparation of second resin composition (varnish) [1] First, bisphenol F / bisphenol A phenoxy resin (Mitsubishi Chemical, 4275, weight average molecular weight 6.0 × 10 ⁴ , bisphenol F skeleton and bisphenol A skeleton) Ratio = 75: 25) 40.0 parts by mass, bisphenol A type epoxy resin (manufactured by DIC, 850S, epoxy equivalent 190) 55.0 parts by mass, 2-phenylimidazole (2PZ by Shikoku Chemicals) 3.0 parts by mass, As a silane coupling agent, 2.0 parts by mass of γ-glycidoxypropyltrimethoxysilane (KBM-403 manufactured by Shin-Etsu Silicone) was weighed. These were dissolved in 400 parts by mass of cyclohexanone and mixed to obtain a mixed solution. A varnish containing a resin material was obtained by stirring the mixed solution using a high-speed stirring device.

  [2] Next, 800 g of alumina (manufactured by Nippon Light Metal, average particle size A 3.2 μm, primary particle size B 3.6 μm, average particle size A / primary particle size B = 0.9 (Lot No. Z401)) Was weighed. Next, alumina was put into a plastic container containing 1300 mL of pure water to obtain an alumina solution. Thereafter, the alumina solution was stirred using a disperser having a blade having a diameter of 50 mm (“R94077” manufactured by Tokushu Kika Kogyo Co., Ltd.) under the condition of a rotational speed of 5000 rpm and a stirring time of 15 minutes. Thereby, the alumina was washed with water.

  Thereafter, the alumina solution was allowed to stand for 15 minutes to obtain a supernatant. Next, 50 mL of the supernatant was collected with a dropper and filtered to obtain a filtrate. Thereafter, the pH of the filtrate was measured. The supernatant liquid was removed by decantation until the pH value reached 7.0. Thereafter, the alumina was washed with water several times.

[3] Next, the alumina washed with water as described above was allowed to stand for 20 minutes. Thereafter, the supernatant was removed by decantation. Thereafter, 1000 mL of acetone was put into the plastic container to obtain a mixed solution of alumina and acetone. Thereafter, a mixed solution of alumina and acetone was stirred using the disperser under the conditions of a rotation speed of 800 rpm and a stirring time of 5 minutes.
And the liquid mixture of an alumina and acetone was left to stand for 12 hours, and the supernatant liquid was obtained. Thereafter, the supernatant was removed.

  [4] Next, the alumina after the supernatant was removed was transferred to a stainless steel vat. Using a fully exhausted box dryer (“PHH-200” manufactured by Tabai Co., Ltd.), the alumina was dried under the conditions of a drying temperature of 40 ° C. and a drying time of 1 hour to obtain a washed alumina (filler).

  Thereafter, the washed alumina was dried under the conditions of 200 ° C. × 24 hours and then left under the conditions of 85 ° C. × 85% RH. Thus, the moisture content of the washed alumina was set to 0.18% by mass.

  The water content of the alumina was calculated from the difference in mass between 25 ° C. and 500 ° C. measured using a differential thermal balance apparatus (TG-DTA).

  [5] Next, washed alumina (505.0 parts by mass) is applied to the varnish containing the resin material prepared in advance in the step [1] using a disperser (“R94077” manufactured by Tokushu Kika Kogyo Co., Ltd.). The mixture was mixed under the conditions of a rotational speed of 1000 rpm and a stirring time of 120 minutes. This obtained the 2nd resin composition of 83.5 weight% (60.0 volume%) of resin solid content ratio of an alumina.

3.2 Film Formation of Resin Layer Forming Layer on Metal Foil Obtained in 3.1 above on the roughened surface of a roll-shaped copper foil having a width of 260 mm and a thickness of 35 μm (manufactured by Nihon Denki, YGP-35) The second resin composition was applied with a comma coater. Next, the second resin composition was heated and dried at 100 ° C. for 3 minutes and at 150 ° C. for 3 minutes, thereby forming a resin layer forming layer (layer) having a thickness of 100 μm on the copper foil. This obtained the laminated body.

  In addition, the layer is in a semi-cured state by drying the second resin composition under such conditions. The laminate was cut into a length of 50 mm and a width of 80 mm to form a metal foil on which a layer was formed.

3.3 Preparation of first resin composition in tablet form 28.0% by mass of resol type phenol resin (Sumitomo Bakelite, PR-51723), novolak type phenol resin (PR-51305, manufactured by Sumitomo Bakelite) 8.0 mass%, glass fiber (CS3E479, manufactured by Nittobo Co., Ltd., average particle diameter: 11 μm, average major axis: 3 mm, average aspect ratio: 270) 55.0 mass%, wollastonite (manufactured by NYCO Minerals, NYAD5000, average particle size: 3 μm, average major axis: 9 μm, average aspect ratio: 3) is 6.0% by mass, and γ-aminopropyltriethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name: KBE-903) is 0.00. 2% by weight, 1.0% by weight of a curing aid (slaked lime), and 1.8% by weight of other components such as a lubricant were dry mixed. To obtain a compound. Next, the mixture was melt-kneaded with a heating roll at 90 ° C. to obtain a kneaded product, and the kneaded product was cooled. Thereafter, the pulverized product obtained by pulverizing the kneaded product was tableted to obtain a first resin composition (P1) having a tablet shape.

(Viscosity characteristics of first resin composition (P1))
The melt viscosity of the first resin composition (P1) at 175 ° C. was measured using a flow characteristic evaluation device (Koka flow tester, CFT-500D).

  In addition, the first resin composition (P1) was heated from 60 ° C. to 200 ° C. under the conditions of a temperature rising rate of 3 ° C./min and a frequency of 1 Hz, using a rheometer MCR301 manufactured by Anton Paar Japan. From the obtained viscosity profile, the minimum melt viscosity and the temperature at which the minimum melt viscosity was reached were determined.

3.4 Preparation of Heat Dissipation Metal Plate A5052 aluminum alloy plate 1A (length 30 mm × width) having the shape shown in FIGS. 1 and 2 whose surface is sufficiently polished with # 4000 polishing paper as the heat dissipation metal plate 7. 40 mm, 1.5 mm in thickness, and a projection 73 (width: 3 mm, height: 1 mm) of the first embodiment were prepared.

<Evaluation method of heat dissipation metal plate>
(Measurement of surface roughness of heat dissipation metal plate)
The surface roughness Ra and Rz of the aluminum alloy plate 1A (heat radiating metal plate) at a magnification of 20 was measured using an ultradeep shape measuring microscope (VK9700 manufactured by Keyence Corporation). Ra and Rz were measured according to JIS-B0601. The aluminum alloy plate 1A had Ra of 0.5 μm and Rz of 0.7 μm.

(Measurement of specific surface area)
Using an automatic specific surface area / pore distribution measuring device (BELSORPmini II, manufactured by Nippon Bell Co., Ltd.), the nitrogen adsorption / desorption amount at the liquid nitrogen temperature of the aluminum alloy plate 1A vacuum-dried at 120 ° C. for 6 hours was measured. The actual surface area by the nitrogen adsorption BET method was calculated from the BET plot. The ratio of the actual surface area measured by the nitrogen adsorption BET method to the apparent surface area was defined as the specific surface area. The specific surface area of the aluminum alloy plate 1A was 50.

(Measurement of gloss on the surface of heat-dissipating metal plate)
The surface gloss of the heat radiating metal plate (aluminum alloy plate 1A) conforms to ASTM-D523 using a digital gloss meter (20 °, 60 °) (GM-26 type, manufactured by Murakami Color Research Laboratory Co., Ltd.). And measured at a measurement angle of 60 °. The glossiness of the aluminum alloy plate 1A was 260.

(Measurement of linear expansion coefficient α _M )
The linear expansion coefficient α _M of the aluminum alloy plate 1A in the range from 25 ° C. to the glass transition temperature of the resin member under a compression condition of 5 ° C./min using a thermomechanical analyzer TMA (manufactured by TA Instruments, EXSTAR6000). Was measured. The linear expansion coefficient α _M of the aluminum alloy plate 1A was 23 ppm / ° C.

3.5 Production of Metal Foil-Clad Substrate First, a copper foil (metal foil) having a layer formed therein was accommodated in a cavity 121 included in the molding die 100 so that the layer was on the upper side. Thereafter, a heat radiating metal plate (aluminum alloy plate 1A) was placed on the layer as shown in FIG. 5 and the tablet-shaped first resin composition (P1) was stored in the pot 111.

  Next, the plunger 112 was inserted into the pot 111 while the first resin composition (P1) in the pot 111 was heated and melted. As a result, in the heated and pressurized state, the melted first resin composition (P1) filled the cavity 121 so as to cover the layer and cover the outer periphery of the aluminum alloy plate 1A.

  And the metal of Example 1B by which the resin layer, the insulating part, and the heat radiating metal plate were laminated | stacked in this order on the copper foil by hardening the 1st resin composition (P1) and layer which fuse | melted. A foil-clad substrate 1B was obtained.

  The conditions for curing the first resin composition (P1) and the layer were set as follows.

・ Heating temperature: 175 ° C
・ Pressure during pressurization: 5.0 MPa
・ Heating / pressurizing time: 3 minutes

(Evaluation of metal foil-clad substrate)
(Cooling cycle of metal foil-clad substrates)
The obtained metal foil-clad substrate was allowed to stand at −40 ° C. for 30 minutes and then subjected to heat treatment for 1000 cycles at 120 ° C. for 1000 cycles. The metal foil tension board | substrate after heat processing was observed using the following criteria.

[Criteria]
A: Adherence between the insulating portion and the heat radiating metal plate is maintained, the metal foil-clad substrate is structurally maintained, and the heat radiating metal plate is not dropped from the metal foil-clad substrate.
B: Adhesion between the insulating portion and the heat radiating metal plate is not maintained, but the metal foil-clad substrate is structurally maintained, and the heat radiating metal plate is not detached from the metal foil-clad substrate.
C: The heat radiating metal plate is held by contraction of the insulating portion, and the heat radiating metal plate is not detached from the metal foil-clad substrate.
D: The heat-dissipating metal plate fell off from the metal foil-clad substrate, and the shape of the metal foil-clad substrate could not be maintained structurally.

(Example 2B)
As the heat dissipating metal plate 7, an A5052 aluminum alloy plate 2A (length 30 mm × width 40 mm, thickness 1.5 mm, third, having the shape shown in FIG. 7 whose surface is sufficiently polished with # 4000 polishing paper. A metal foil-clad substrate 2B of Example 2B was obtained in the same manner as Example 1B, except that the protrusion 73 (with width: 3 mm, height: 1 mm) of the embodiment was used.

(Example 3B)
As the heat dissipating metal plate 7, an A5052 aluminum alloy plate 3A (length 30 mm × width 40 mm, thickness 1.5 mm, thickness 6) having the shape shown in FIG. 11 whose surface is sufficiently polished with # 4000 polishing paper. Example 3B was performed in the same manner as Example 1B, except that the protrusion 73 (width: 2.5 mm, height: 2.5 mm, distance between adjacent protrusions: 2.5 mm) of the embodiment was used. A metal foil-clad substrate 3B was obtained.

(Example 4B)
As the heat-dissipating metal plate 7, an A5052 aluminum alloy plate 4A (length 30 mm × width 40 mm, thickness 1.5 mm, thickness 9th, having the shape shown in FIG. 17 whose surface is sufficiently polished with # 4000 polishing paper. Except for using the projection 73 (width: 2.5 mm, height: 2.5 mm, pitch between adjacent projections: 2.5 mm, taper angle of the groove with respect to the thickness direction: 5 °) of the embodiment, In the same manner as Example 1B, a metal foil-clad substrate 4B of Example 4B was obtained.

(Example 5B)
A metal foil-clad substrate 5B of Example 5B was obtained in the same manner as Example 1B, except that the following aluminum alloy plate 1B was used instead of the aluminum alloy plate 1A as the heat radiating metal plate.

<Preparation of aluminum alloy plate 1B>
An aqueous solution containing potassium hydroxide (16% by mass), zinc chloride (5% by mass), sodium nitrate (5% by mass), and sodium thiosulfate (13% by mass) was prepared. In the obtained aqueous solution (30 ° C.), the aluminum alloy plate 1A was immersed and rocked. Thereby, the aluminum alloy plate 1A was dissolved in the depth direction by 15 μm (calculated from the reduced weight of aluminum). Next, the aluminum alloy plate 1A was washed with water, immersed in a 35% by mass nitric acid aqueous solution (30 ° C.) and shaken for 20 seconds, then washed with water and dried to obtain an aluminum alloy plate 1B.
The characteristics of the roughened layer of the aluminum alloy plate 1B were as follows.

Ra: 4.0 μm
Rz: 15.5 μm
Specific surface area: 270
Glossiness: 10
Linear expansion coefficient α _M : 23 ppm / ° C.

(Observation of the surface of the heat dissipation metal plate)
The surface of the aluminum alloy plate 1B was photographed with an electron microscope (SEM), and the structure of the roughened layer existing on the surface of the aluminum alloy plate 1B was observed. In FIG. 31, the electron micrograph showing the enlarged view of the roughening layer (surface layer) which exists in the surface of the aluminum alloy plate 1B is shown. Based on the electron micrograph, the thickness of the roughened layer, the cross-sectional shape of the recess, the average depth of the recess, and the average cross-sectional width of the opening were determined.

  The thickness of the roughened layer of the aluminum alloy plate 1B was 15 μm, the average depth of the recesses was 13 μm, and the average cross-sectional width of the openings was 14 μm. Further, as shown in FIG. 31, the cross section of the concave portion has a shape having a cross sectional width larger than the cross sectional width of the opening portion in at least a part from the opening portion to the bottom portion of the concave portion.

(Observation of joints of metal foil-clad substrates)
The cross section of the joint portion of the metal foil-clad substrate 5B was photographed with an electron microscope (SEM) to obtain an electron micrograph. In the electron micrograph, the cross-sectional structure of the joint was observed. In FIG. 32, the electron micrograph showing the enlarged view of the cross section of the junction part of the metal foil tension board | substrate 5B obtained in Example 5B is shown. Thereby, the presence or absence of the hardened | cured material in a recessed part, the presence or absence of the filler in a recessed part, the average major axis and average aspect ratio of the filler which exist in a recessed part were calculated | required, respectively. The presence or absence of a filler in the recess was also confirmed by energy dispersive X-ray fluorescence analysis.

(Example 6B)
A metal foil-clad substrate 6B of Example 6B was obtained in the same manner as Example 5B, except that the tablet-shaped first resin composition (P3) was adjusted as follows.

  28.0% by mass of resol type phenolic resin (manufactured by Sumitomo Bakelite, PR-51723), 8.0% by mass of novolac type phenolic resin (PR-51305, manufactured by Sumitomo Bakelite), glass fiber (CS3E479, Nittobo) Manufactured, average particle diameter: 11 μm, average major axis: 3 mm, average aspect ratio: 270) is 61.0% by mass, and γ-aminopropyltriethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name: KBE-903) is 0.00. 2% by mass, 1.0% by mass of a curing aid (slaked lime), and 1.8% by mass of other components such as a lubricant were dry mixed to obtain a mixture. Next, the mixture was melt-kneaded with a heating roll at 90 ° C. to obtain a kneaded product, and the kneaded product was cooled. Thereafter, the pulverized product obtained by pulverizing the kneaded product was tableted to obtain a first resin composition (P3) having a tablet shape.

The linear expansion coefficient α _R of the insulating part having a thickness of 1.5 mm made of the first resin composition (P3) is 17 ppm / ° C. in the flow direction and 48 ppm / ° C. in the direction perpendicular thereto, and the average value is 31 ppm / ° C. there were. Therefore, the difference in linear expansion coefficient (α _R −α _M ) was 8 ppm / ° C.

(Comparative Example 1B)
Instead of the aluminum alloy plate 1A at the time of production (formation) of the metal foil-clad substrate, the A5052 aluminum alloy plate 5A (length 30 mm × width 40 mm, thickness 1) whose surface was sufficiently polished with # 4000 polishing paper A metal foil-clad substrate 7B of Comparative Example 1B was obtained in the same manner as in Example 1B, except that 0.5 mm, no protrusions and no roughening layer was used.
The above evaluation results are shown in Tables 2 and 3.

  Since the metal foil-clad substrates 1B to 6B obtained in Examples 1B to 6B have protrusions on the joint surface with the insulating portion of the heat radiating metal plate, the heat radiating metal plate is structurally held at the joint portion with the insulating portion. It was. For this reason, it was the result which was excellent in the thermal cycle property of a metal foil tension substrate.

  Furthermore, in the metal foil-clad substrates 5B and 6B obtained in Examples 5B and 6B, a cured product of the first resin composition was observed in the recesses constituting the unevenness of the roughened layer. For this reason, the metal foil-clad substrates 5B and 6B are excellent in the adhesiveness of the joint portion between the insulating portion and the heat-dissipating metal plate, resulting in excellent thermal cycle performance of the metal foil-clad substrate.

  On the other hand, the metal foil-clad substrate 7B obtained in Comparative Example 1B has no protrusion on the joint surface with the insulating portion of the heat radiating metal plate, and no recess on the surface of the heat radiating metal plate. And the heat radiating metal plate was not hold | maintained in the junction part with an insulation part. For this reason, the thermal cycle performance of the metal foil-clad substrate was extremely inferior.

  Moreover, the copper foil of metal foil tension board | substrate 1B-7B obtained by Example 1B-6B and Comparative Example 1B was patterned, the wiring was formed, and the circuit board provided with the terminal which electrically connects a heat generating body was obtained. . Furthermore, a heating element was mounted on each circuit board to obtain a heating element mounting board. The heat generating body mounting board | substrate concerning Example 1B-6B was high in heat dissipation compared with the heat generating body mounting board | substrate concerning Comparative Example 1B.

  With the configuration of the metal foil-clad substrate of the present invention, it is possible to manufacture a circuit board that can efficiently dissipate heat generated from a heating element to be mounted. Therefore, by mounting a heating element on the circuit board of the present invention to obtain a heating element mounting board, heat generated from the heating element can be efficiently radiated through the circuit board in the heating element mounting board. . Therefore, the present invention has industrial applicability.

Claims (12)

A metal foil-clad substrate used for forming a circuit board to be mounted by electrically connecting a heating element that generates heat,
A flat metal foil,
An insulating resin layer formed on one surface of the metal foil;
Heat generated by the heating element formed corresponding to a first region including a region where the heating element is mounted on the surface of the resin layer opposite to the metal foil in a plan view of the resin layer. A heat dissipating metal plate to dissipate heat,
An insulating portion formed corresponding to at least a part of the second region excluding the first region on the surface of the resin layer opposite to the metal foil;
The insulating part is composed of a cured product of a first resin composition containing a first thermosetting resin,
The resin layer contains a resin material, and is composed of a cured or solidified product of a second resin composition different from the first resin composition,
The metal foil-clad substrate, wherein the heat radiating metal plate has at least one protrusion protruding from a joint surface with the insulating portion.   2. The metal foil-clad substrate according to claim 1, wherein the at least one protrusion includes a protrusion protruding in the middle of the thickness direction of the heat radiating metal plate.   The metal foil-clad substrate according to claim 1, wherein the at least one protrusion includes a protrusion protruding on the resin layer side of the heat radiating metal plate.   4. The metal foil-clad substrate according to claim 1, wherein the at least one protrusion includes a protrusion protruding on a side opposite to the resin layer of the heat radiating metal plate.   5. The metal foil-clad substrate according to claim 1, wherein the at least one protrusion includes a protrusion that protrudes in the middle of a direction orthogonal to the thickness direction of the heat radiating metal plate.   The metal foil-clad substrate according to claim 5, wherein the at least one protrusion includes a protrusion that protrudes inclined with respect to a thickness direction of the heat radiating metal plate.   The metal foil-clad substrate according to claim 1, wherein the resin material is a second thermosetting resin.   The metal foil-clad substrate according to claim 7, wherein the second thermosetting resin is an epoxy resin.   The metal foil-clad substrate according to any one of claims 1 to 8, wherein the first thermosetting resin is a phenol resin.   The metal foil tension according to any one of claims 1 to 9, wherein a flat surface is constituted by a surface of the insulating portion opposite to the resin layer and a surface of the heat radiating metal plate opposite to the resin layer. substrate. A circuit board formed using the metal foil-clad substrate according to any one of claims 1 to 10,
A circuit board comprising a circuit provided with a terminal for electrically connecting the heating element formed by patterning the metal foil.   12. A heating element mounting board comprising: the circuit board according to claim 11; and the heating element electrically connected to the terminal and mounted on the circuit board.

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