JPWO2016052333A1 - Substrate processing apparatus, semiconductor device manufacturing method, and program - Google Patents

Abstract

According to one aspect of the present invention, a substrate mounting table provided in a processing chamber, a plurality of substrate mounting units disposed on the same circumference centered on the center of the substrate mounting table, and a processing gas in the processing chamber. A first gas buffer having a first gas supply surface provided with a gas supply hole for introduction, and a second gas supply surface provided with a gas supply hole for introducing a processing gas into the processing chamber. A second gas buffer provided; a first gas supply unit configured to supply a processing gas to the first gas buffer; a second gas supply unit configured to supply a processing gas to the second gas buffer; and the substrate mounting table. There is provided a substrate processing apparatus provided with a rotation mechanism for rotating the first gas supply surface between the first gas supply surface and the center of the substrate mounting table. Thereby, uniformity such as a film thickness formed on the substrate can be improved.

Description

  The present invention relates to a technique for performing a process such as an oxidation process, a diffusion process, and a thin film generation on a substrate such as a wafer.

  The substrate processing apparatus includes a reaction furnace including a reaction vessel, a heating device, and the like. The substrate is stored in a processing chamber defined in the reaction vessel, the substrate is heated to a predetermined temperature by the heating device, and the processing gas is supplied to the reaction vessel. The substrate is processed by supplying the inside. The substrate processing apparatus includes a single-wafer type substrate processing apparatus that processes substrates one by one and a batch type substrate processing apparatus that processes a required number of substrates at a time.

  Some single-wafer type substrate processing apparatuses have a structure in which a processing chamber is divided into a plurality of processing regions in a reaction vessel, and a substrate is placed while supplying a processing gas to each processing region. By rotating the susceptor, the substrate passes through each region, and film formation is performed.

  However, in the conventional substrate processing apparatus, the processing gas is supplied only from the rotation center side of the susceptor and the processing gas is exhausted from the outer peripheral side of the susceptor. Accordingly, the concentration of the upstream processing gas is high, but the concentration of the downstream processing gas is low due to the consumption of the processing gas in the processing region, and the upstream of the gas supply depends on the conditions such as gas type, flow rate, pressure, and temperature. The film thickness and the like may be different between the side and the downstream side.

  In order to solve the above problems and perform uniform processing on the substrate, a technique for controlling the processing conditions in the fan-shaped processing region and improving the uniformity of the film thickness or the like is required. However, in the conventional gas supply method optimized under a certain condition, it is necessary to change various processing conditions and optimize again by replacing parts.

  In view of such circumstances, the present invention provides a technique for improving the uniformity of the thickness of a thin film generated on a substrate.

  According to one aspect of the present invention, a substrate mounting table provided in a processing chamber, a plurality of substrate mounting units disposed on the same circumference centered on the center of the substrate mounting table, and processing in the processing chamber A first gas buffer having a first gas supply surface provided with a gas supply hole for introducing a gas at a position facing the substrate mounting table; and a gas for introducing a processing gas into the processing chamber A second gas buffer provided with a second gas supply surface provided with a supply hole at a position facing the substrate mounting table, and a first gas supply unit for supplying the processing gas to the first gas buffer And a second gas supply unit for supplying the processing gas to the second gas buffer, and a rotation mechanism for rotating the substrate mounting table, wherein the second gas supply surface is the first gas supply surface. Between the gas supply surface and the center of the substrate mounting table. The substrate processing apparatus is provided.

  According to the present invention, it is possible to improve the uniformity of the film thickness formed on the substrate.

It is a top view which shows the outline of the substrate processing apparatus which concerns on the Example of this invention. It is a sectional side view which shows the outline of the substrate processing apparatus which concerns on the Example of this invention. It is a horizontal sectional view showing a process chamber of a substrate processing apparatus according to an embodiment of the present invention. It is an AA arrow line view of FIG. It is explanatory drawing which shows the flow of the gas in the process area | region which concerns on the Example of this invention. It is explanatory drawing explaining the flow-velocity distribution in the process area | region of the gas supplied from an inner peripheral buffer chamber and an outer peripheral buffer chamber. It is a flowchart explaining the substrate processing process using the substrate processing apparatus which concerns on the Example of this invention. It is a flowchart explaining the film-forming process by this substrate processing apparatus. It is the graph which compared the film thickness distribution for every flow rate ratio of the gas supplied to an inner peripheral side buffer chamber and an outer peripheral side buffer chamber about the thin film produced | generated on a board | substrate at the end of 1 cycle. It is explanatory drawing explaining the supply direction and revolution direction of the gas with respect to a board | substrate. It is a principal part enlarged view which shows the modification of a present Example.

  Embodiments of the present invention will be described below with reference to the drawings.

  First, a substrate processing apparatus 1 according to an embodiment of the present invention will be described with reference to FIGS. The substrate processing apparatus 1 is a multi-wafer type substrate processing apparatus. In the following description, in FIG. 1, the X1 direction is the right, the X2 direction is the left, the Y1 direction is the front, and the Y2 direction. Is the back.

  In the substrate processing apparatus 1, a FOUP (Front Opening Unified Pod) 4 is used as a carrier for transporting substrates such as processing substrates (wafers) 2 and dummy wafers 3 as products. . The substrate processing apparatus 1 is an apparatus for transporting and processing the wafer 2 and further transporting the dummy wafer 3. In the following description, the wafer 2 will be mainly described.

  As shown in FIGS. 1 and 2, the substrate processing apparatus 1 includes a first transfer chamber 5 configured in a load lock chamber structure that can withstand a pressure (negative pressure) less than atmospheric pressure such as a vacuum state. The first transfer chamber 5 has a box shape in which a plan view is a pentagon and both upper and lower ends are closed. The first transfer chamber 5 is provided with a first substrate transfer machine 6 capable of simultaneously transferring two wafers 2 under a negative pressure. The first substrate transfer machine 6 is configured to be moved up and down by the first substrate transfer machine elevator 7 while maintaining the airtightness of the first transfer chamber 5. Here, the first substrate transfer device 6 may be capable of transferring a single wafer 2.

  Of the five side walls of the first transfer chamber casing 8 that define the first transfer chamber 5, spare walls (load lock chambers) 9 and 11 are gated on the two side walls located on the front side. It is connected via valves 12 and 13. The spare chambers 9 and 11 can be used together with a carry-in spare chamber and a carry-out spare chamber, and each has a structure capable of withstanding negative pressure. Furthermore, it is possible to place the two wafers 2 in the preliminary chambers 9 and 11 so as to be stacked by the substrate mounting table 14.

  In the preliminary chambers 9 and 11, a partition plate (intermediate plate) 15 is installed between the wafers 2 and 2. By installing the partition plate 15, the processed and cooled wafers previously transferred into the preliminary chambers 9 and 11 due to the thermal effect of the processed wafers 2 transferred into the preliminary chambers 9 and 11. It is possible to prevent thermal interference such that the temperature drop of 2 is delayed.

  Here, a general method for increasing the cooling efficiency will be described. Cooling water, chiller, or the like is allowed to flow through the spare chamber 9, the spare chamber 11, and the partition plate 15 to keep the wall surface temperature low, thereby cooling the processed wafer 2 in any position of the slot holding the wafer 2. Efficiency can be improved. Note that, under a negative pressure, if the distance between the wafer 2 and the partition plate 15 is too large, the cooling efficiency due to heat exchange is lowered. Therefore, as a method for improving the cooling efficiency, the wafer 2 is mounted on the substrate mounting table 14. In some cases, after the substrate is placed, a drive mechanism for moving the substrate platform 14 up and down to approach the wall surfaces of the preliminary chambers 9 and 11 may be provided.

  A second transfer chamber 16 used at substantially atmospheric pressure is connected to the front side of the reserve chamber 9 and the reserve chamber 11 via gate valves 17 and 18. A second substrate transfer machine 19 for transferring the wafer 2 is installed in the second transfer chamber 16. The second substrate transfer machine 19 is configured to be moved up and down by a second substrate transfer machine elevator 21 installed in the second transfer chamber 16 and reciprocates in the left-right direction by a linear actuator 22. It is configured to be moved.

  As shown in FIG. 1, an orientation flat (notch) aligning device 23 is provided on the left side of the second transfer chamber 16. As shown in FIG. 2, a clean unit 24 for supplying clean air is provided above the second transfer chamber 16.

  As shown in FIGS. 1 and 2, the wafer 2 is carried into and out of the second transfer chamber 16 on the front side of the second transfer chamber casing 25 that defines the second transfer chamber 16. A substrate loading / unloading port 26 and a pod opener 27 are provided for this purpose.

  A load port (IO stage) 28 is provided on the opposite side of the pod opener 27 with respect to the substrate loading / unloading port 26, that is, on the outside of the second transfer chamber housing 25. The pod opener 27 includes a closure 31 that can open and close the cap 29 of the pod 4 and close the substrate loading / unloading port 26, and a drive mechanism 32 that drives the closure 31. By opening and closing the cap 29 of the pod 4 placed on the load port 28, the wafer 2 can be taken in and out of the pod 4. The pod 4 is carried into and out of the load port 28 by an in-process transfer device (OHT or the like) (not shown).

  Further, among the five side walls of the first transfer chamber casing 8, four side walls located on the rear side (back side) are provided with a first processing furnace 33 for performing a desired process on the wafer 2, The second processing furnace 34, the third processing furnace 35, and the fourth processing furnace 36 are connected to each other through gate valves 37, 38, 39, and 40, respectively.

  Next, a substrate processing process using the substrate processing apparatus 1 will be described. The following control is controlled by the control unit 42 as shown in FIGS. The controller 42 controls the entire substrate processing apparatus 1.

  With a maximum of 25 wafers 2 stored in the pod 4, the wafer 2 is transferred to the substrate processing apparatus 1 that performs the processing process by the in-process transfer apparatus. The transported pod 4 is delivered and placed on the load port 28 from the in-process transport device. Thereafter, the cap 29 of the pod 4 is removed by the pod opener 27, and the loading / unloading port of the wafer 2 of the pod 4 is opened.

  When the pod 4 is opened by the pod opener 27, the second substrate transfer machine 19 installed in the second transfer chamber 16 picks up the wafer 2 from the pod 4 and carries it into the preliminary chamber 9. Is transferred to the substrate mounting table 14. During the transfer operation, the gate valve 12 on the first transfer chamber 5 side of the preliminary chamber 9 is closed, and the negative pressure in the first transfer chamber 5 is maintained. When the transfer of the wafer 2 to the substrate mounting table 14 is completed, the gate valve 17 is closed, and the inside of the preliminary chamber 9 is exhausted to a negative pressure by an exhaust device (not shown).

  When the pressure in the preliminary chamber 9 reaches a preset pressure value, the gate valve 12 is opened, and the preliminary chamber 9 and the first transfer chamber 5 communicate with each other. Subsequently, the first substrate transfer machine 6 in the first transfer chamber 5 carries the wafer 2 from the substrate mounting table 14 into the first transfer chamber 5. After the gate valve 12 is closed, the gate valve 38 is opened, and the first transfer chamber 5 and the second processing furnace 34 are communicated with each other. After the gate valve 38 is closed, a processing gas is supplied into the second processing furnace 34 and a desired process is performed on the wafer 2.

  When the processing on the wafer 2 is completed in the second processing furnace 34, the gate valve 38 is opened, and the wafer 2 is carried out to the first transfer chamber 5 by the first substrate transfer machine 6. After unloading, the gate valve 38 is closed.

  Next, the gate valve 13 is opened, the wafer 2 carried out from the second processing furnace 34 by the first substrate transfer machine 6 is transferred to the substrate mounting table 14 in the preliminary chamber 11, and the processed wafer 2 is cooled. Is done.

  When the processed wafer 2 is transferred to the preliminary chamber 11 and a preset cooling time has elapsed, the preliminary chamber 11 is returned to approximately atmospheric pressure by the inert gas. When the inside of the preliminary chamber 11 is returned to substantially atmospheric pressure, the gate valve 18 is opened, and the cap 29 of the empty pod 4 placed on the load port 28 is opened by the pod opener 27.

  Subsequently, the second substrate transfer machine 19 in the second transfer chamber 16 unloads the wafer 2 from the substrate mounting table 14 to the second transfer chamber 16, and the substrate loading / unloading port of the second transfer chamber 16. 26 through the pod 4.

  Here, the cap 29 of the pod 4 may be kept open until a maximum of 25 wafers 2 are returned, or may be returned to the pod 4 from which the wafer 2 has been unloaded without being stored in the empty pod 4. .

  By repeating the above operation, the cap 29 is closed by the pod opener 27 when the storage of the 25 processed wafers 2 into the pod 4 is completed. The closed pod 4 is transferred from the top of the load port 28 to the next process by an in-process transfer device (not shown).

  The above operation has been described by taking the case where the second processing furnace 34 and the spare chambers 9 and 11 are used as an example. However, the first processing furnace 33, the third processing furnace 35, and the fourth processing furnace 36 are used. The same operation is also performed when is used.

  In the above description, four processing furnaces have been described. However, the number of processing furnaces may be determined according to the type of the corresponding substrate and the film to be formed.

  In the substrate processing apparatus 1, the spare chamber 9 is used for carrying in and the spare chamber 11 is used for carrying out. However, the spare chamber 11 may be used for carrying in, and the spare chamber 9 may be used for carrying out. The chamber 11 may be used for both loading and unloading.

  Further, by making the spare chamber 9 or the spare chamber 11 dedicated to carrying-in or carrying-out, cross contamination can be reduced, and carrying-in and carrying-out can be used together to improve the transfer efficiency of the wafer 2. .

  Further, the same processing may be performed in all the processing furnaces, or different processing may be performed in each processing furnace. For example, when different processing is performed in the first processing furnace 33 and the second processing furnace 34, after the processing on the wafer 2 is performed in the first processing furnace 33, the second processing furnace 34 continues. May be performed. In addition, after processing the wafer 2 in the first processing furnace 33, when another processing is performed in the second processing furnace 34, the processing may be performed via the spare chamber 9 or the spare chamber 11.

  Further, the processing furnace only needs to be connected to any one of the processing furnaces 33 and 34. In the range of up to four processing furnaces 33 to 36 such as two processing furnaces 35 and 36. Any number of possible combinations may be connected.

  Further, the number of wafers 2 processed by the substrate processing apparatus 1 may be one or plural. Similarly, with respect to the spare chamber 9 or the spare chamber 11, the number of wafers 2 to be cooled may be one or plural. The number of processed wafers 2 that can be cooled may be any combination as long as it is within a range of up to four sheets that can be inserted into the slots of the spare chamber 9 and the spare chamber 11.

  In addition, while the processed wafer 2 is being carried in the preliminary chamber 9 and being cooled, the gate valves 12 and 17 of the preliminary chamber 9 are opened and closed to load the wafer 2 into the processing furnace. Processing may be performed. Similarly, while the processed wafer 2 is carried in the preliminary chamber 11 and cooling is performed, the gate valves 13 and 18 of the preliminary chamber 11 are opened and closed, and the wafer 2 is loaded into the processing furnace. You may perform the process of.

  Here, if the gate valves 17 and 18 on the atmosphere side are opened without sufficient cooling time, the preliminary chambers 9 and 11 or electrical components connected around the preliminary chambers 9 and 11 are radiated by the radiant heat of the wafer 2. May cause damage. Therefore, when cooling the hot wafer 2, the gate valves 13 and 18 of the spare chamber 11 are opened and closed while the wafer 2 having a large radiant heat that has been processed in the spare chamber 9 is carried in and cooled. Then, the wafer 2 can be carried into the processing furnace and the wafer 2 can be processed. Similarly, while the processed wafer 2 is being carried into the preliminary chamber 11 and cooling is being performed, the gate valves 12 and 17 of the preliminary chamber 9 are opened and closed, and the wafer 2 is loaded into the processing furnace. Can also be performed.

  Next, referring to FIGS. 3 and 4, a process chamber 45 as a processing furnace according to an embodiment of the present invention will be described. 3 is a horizontal sectional view showing the structure of the process chamber 45, and FIG. 4 is a view taken along the line AA of FIG.

  The process chamber 45 includes a reaction vessel 46 which is a cylindrical airtight vessel, and a processing space (processing region) 47 for the wafer 2 is formed in the reaction vessel 46. On the upper side of the processing space 47, four partition plates 48 extending radially from the center are provided. A room forming the processing space 47 is called a processing room.

  The partition plate 48 serves as a divided structure that divides the processing space 47 into the first processing region 49, the first purge region 51, the second processing region 52, and the second purge region 53. The first processing region 49, the first purge region 51, the second processing region 52, and the second purge region 53 are along the rotation direction (circumferential direction) of a susceptor (substrate mounting table) 54 described later. These are arranged in this order.

  As will be described later, the susceptor 54 has a top surface on which a plurality of wafers 2 are placed. By rotating the susceptor 54, the wafer 2 placed on the susceptor 54 has a first surface. The process area 49, the first purge area 51, the second process area 52, and the second purge area 53 are moved in this order. Further, as will be described later, a first processing gas as a first gas is supplied into the first processing region 49, and a second processing as a second gas is supplied into the second processing region 52. A gas is supplied, and an inert gas is supplied into the first purge region 51 and the second purge region 53.

  Therefore, by rotating the susceptor 54, the first processing gas, the inert gas, the second processing gas, and the inert gas are supplied onto the wafer 2 in this order. The configurations of the susceptor 54 and the gas supply system will be described later.

  A fan-shaped shower plate 55 is provided in the first processing region 49 so as to cover the entire surface of the first processing region 49 across the lower end of the partition plate 48. A separator 56 is provided between the shower plate 55 and the ceiling of the reaction vessel 46 to divide a buffer chamber (buffer space) formed between the shower plate 55 and the reaction vessel 46 in the radial direction. The separator 56 divides the buffer chamber into an inner peripheral buffer chamber 57 that is an inner peripheral portion and an outer peripheral buffer chamber 58 that is an outer peripheral portion.

  The shower plate 55 is provided with a plurality of shower holes 59 that are gas distribution holes having a predetermined distribution and the same diameter, and the inner peripheral buffer chamber 57 and the outer peripheral buffer chamber are provided through the shower holes 59. 58, the first processing gas is supplied to the first processing region 49. That is, the gas supplied to the inner peripheral buffer chamber 57 and the outer peripheral buffer chamber 58 is diffused in the respective buffer chambers and then supplied to the first processing region 49 through the shower hole 59.

  The distribution of the shower holes 59 is such that when the first processing region 49 is subdivided in the radial direction, the flow passage cross-sectional area (opening area) of the shower holes 59 between the subdivided areas (ring-shaped areas). The ratio is such that the ratio (area ratio, distribution state) between the sum of the two and the area is constant.

  The outer periphery side buffer chamber 58 and the inner periphery side buffer chamber 57 have the same height due to restrictions on the structure of the apparatus. However, in the horizontal cross sectional area, the outer peripheral side buffer chamber 58 has a cross sectional area equal to the inner peripheral side buffer space. It becomes larger than the cross-sectional area of the chamber 57. Accordingly, the gas diffuses more easily in the outer peripheral buffer chamber 58 than in the inner peripheral buffer chamber 57. When the gas flow rates supplied from the inner circumferential first gas supply pipe 84 and the outer circumferential first gas supply pipe 87 described later are the same, the pressure in the outer circumferential buffer chamber 58 is higher than the pressure in the inner circumferential buffer chamber 57. Lower. Therefore, the gas supply rate supplied from the inner peripheral buffer chamber 57 to the processing chamber is faster than the gas supply rate supplied from the outer peripheral buffer chamber 58 to the processing chamber. That is, the gas amount per unit time supplied to the passing wafer 2 is larger on the inner peripheral side than on the outer peripheral side. Therefore, there is a risk that the film thickness on the wafer 2 is biased between the inner peripheral side and the outer peripheral side.

  Therefore, in this embodiment, the gas amount per unit time supplied to the passing wafer 2 is equalized between the outer peripheral side first gas supply pipe 87 and the outer peripheral side so that the outer peripheral side and the inner peripheral side are equal. The amount of gas supplied per unit time supplied to the side buffer chamber 58 is made larger than the amount of gas supplied per unit time supplied from the inner peripheral first gas supply pipe 84 to the inner peripheral buffer chamber 57. Yes. Specifically, the amount of gas supplied to each buffer chamber is adjusted by controlling an inner peripheral side MFC 85 and an outer peripheral side MFC 88 described later. In addition, although described as “equal” here, it is not only completely equal, but also within a range acceptable as a product, and a range in which the film thickness can be controlled to be uniform so that the film thickness is uniform on the inner and outer peripheral sides. It only has to be equal. By processing the surface of the wafer 2 uniformly, substrate processing with a high yield becomes possible.

  By supplying the first processing gas in this state, the flow rate of the gas ejected from the shower hole 59 can be made uniform in the first processing region 49 as shown in FIG.

  The separator 56 is located at a position where the ratio of the total sectional area of the shower holes 59 in the inner buffer chamber 57 and the total sectional area of the shower holes 59 in the outer buffer chamber 58 is, for example, 1: 3. Provided. In this case, for example, the gas supply ratio to the inner peripheral buffer chamber 57 and the outer peripheral buffer chamber 58 is set to 1: 3 as in the ratio of the total sectional area.

  With the configuration as described above, the gas supply amount per unit area supplied to the wafer 2 of the gas ejected from each shower hole 59 can be made uniform with respect to the passing wafer 2. . Therefore, the cross-sectional area ratio of the shower hole 59 between the inner peripheral buffer chamber 57 and the outer peripheral buffer chamber 58 is the ratio of the gas supply amount for making the reference gas flow (uniform flow) as it is.

  FIG. 6 is an image diagram of the radial cross-sectional flow velocity distribution in the first processing region 49 when the gas flow rates supplied to the inner circumferential buffer chamber 57 and the outer circumferential buffer chamber 58 are distributed.

  In FIG. 6, A is the gas flow velocity distribution when the ratio of the gas flow rate supplied to the inner peripheral buffer chamber 57 and the gas flow rate supplied to the outer peripheral buffer chamber 58 is 1: 0. B shows the gas flow velocity distribution when the ratio of the gas flow rate supplied to the inner circumferential buffer chamber 57 and the gas flow rate supplied to the outer circumferential buffer chamber 58 is 0: 1. At this time, it is possible to provide a gas flow rate gradient in which the gradient of the gas flow velocity distribution in the first processing region 49 is the maximum and minimum, and the gas flow velocity in the first processing region 49 is within this range. Can be controlled by the flow rate ratio of the gas supplied to the inner circumferential buffer chamber 57 and the outer circumferential buffer chamber 58.

  When the gas flow rate on the inner peripheral side is increased as shown in FIG. 6A, the gas supplied to the inner peripheral side may move to the second processing region 52 that opposes the space in the center of the processing chamber. It is effective when assumed. For example, when a space is provided in the center of the processing chamber as shown in FIG. 4, the space between the first processing region 49 and the second processing region 52 communicates. By communicating, the gas supplied to the inner periphery of the first processing region 49 may move to the second processing region 52 through the space in the center of the processing chamber. If the gas is to be supplied uniformly at the inner peripheral portion and the outer peripheral portion, the amount of gas supplied per unit time supplied to the passing wafer 2 is equivalent to the amount of movement of the gas to the second processing region 52. It will be less at the inner periphery than at the outer periphery. For this reason, it is conceivable that the thickness of the substrate passing through the inner periphery becomes thinner than that of the outer periphery. Therefore, as indicated by A in FIG. 6, the supply speed of the gas supplied from the inner peripheral buffer chamber 57 to the processing chamber on the wafer 2 is the gas supplied from the outer peripheral buffer chamber 58 to the processing chamber. In-plane uniformity of wafer processing is improved by adjusting so as to be larger than the supply speed of the wafer. Specifically, the ratio (S2 / S1) of the cross-sectional area S2 of the shower hole 59 of the outer-side buffer chamber 58 to the cross-sectional area S1 of the shower hole 59 of the inner-side buffer chamber 57 (that is, the gas for making the reference gas flow) The ratio (F2 / F1) of the gas flow rate F2 supplied to the outer peripheral buffer chamber 58 with respect to the gas flow rate F1 supplied to the inner peripheral buffer chamber 57 is made smaller than the ratio of the supply amount). (In other words, the ratio of the gas flow rate supplied to the inner circumferential buffer chamber 57 is increased with respect to the ratio of the gas supply amount for obtaining the reference gas flow.)

  Increasing the gas flow rate on the outer peripheral side as shown in B in FIG. For example, as shown in FIG. 4, the exhaust amount exhausted from an exhaust hole 60 described later is large. When the exhaust amount exhausted from the exhaust hole 60 is large, the gas flowing to the outer peripheral side is exhausted before contributing to film formation on the wafer 2. In such a case, the film thickness on the inner peripheral side is large and the outer peripheral side is thin. Therefore, as indicated by B in FIG. 6, the supply rate of the gas supplied from the outer peripheral buffer chamber 58 to the processing chamber on the wafer 2 is supplied from the inner peripheral buffer chamber 57 to the processing chamber. The in-plane uniformity of wafer processing is improved by adjusting the gas supply rate to be larger than the gas supply rate. Specifically, the inner peripheral buffer chamber 57 is in proportion to the ratio (S2 / S1) of the cross sectional area S2 of the shower hole 59 of the outer peripheral buffer chamber 58 to the cross sectional area S1 of the shower hole 59 of the inner peripheral buffer chamber 57. The ratio (F2 / F1) of the gas flow rate F2 supplied to the outer peripheral buffer chamber 58 with respect to the gas flow rate F1 supplied to is increased. (In other words, the ratio of the gas flow rate supplied to the outer peripheral side buffer chamber 58 is increased with respect to the ratio of the gas supply amount for obtaining the reference gas flow.)

  A gap having a predetermined width is formed between the end of the partition plate 48 and the side wall of the reaction vessel 46 so that gas passes through the gap. An inert gas is ejected from the first purge region 51 and the second purge region 53 into the first processing region 49 and the second processing region 52 through the gap. Further, the process gas can be prevented from entering the first purge region 51 and the second purge region 53, and a plurality of process gases can be prevented from reacting.

  In the present embodiment, the angle between the partition plates 48 is 90 °, but the present invention is not limited to this. That is, the supply time of various gases to the wafer 2, etc. For example, the angle between the two partition plates 48 forming the second processing region 52 may be changed as appropriate.

  In this embodiment, each processing region is partitioned by the partition plate 48 and a purge region is formed between the processing regions. However, the present invention is not limited to this, and the first processing region 49 and the second processing region are not limited thereto. What is necessary is just the division structure which can divide | segment the gas supply area | region which does not mix the gas supplied to 52 respectively.

  A susceptor 54 is provided below the partition plate 48, that is, at the bottom center in the reaction vessel 46. The susceptor 54 has a center of a rotation shaft at the center of the reaction vessel 46 and is configured to be rotatable. ing. The susceptor 54 is made of a non-metallic material such as aluminum nitride (AlN), ceramics, quartz, or the like so that metal contamination of the wafer 2 can be reduced. Note that the susceptor 54 is electrically insulated from the reaction vessel 46.

  The susceptor 54 is configured to support a plurality of (for example, five in the present embodiment) wafers 2 on the same surface and on the same circumference in the reaction vessel 46. Here, the term “on the same plane” is not limited to the same plane. When the susceptor 54 is viewed from above, a plurality of wafers 2 do not overlap each other as shown in FIGS. It only has to be arranged like.

  In addition, the substrate mounting part 61 is provided in the support position of the wafer 2 on the surface of the susceptor 54 corresponding to each wafer 2 to be processed. The substrate platform 61 is, for example, circular when viewed from the top surface and concave when viewed from the side surface. In this case, it is preferable that the substrate mounting portion 61 has a diameter slightly larger than the diameter of the wafer 2. By placing the wafer 2 in the substrate platform 61, the wafer 2 can be easily positioned, and is generated when the wafer 2 jumps out of the susceptor 54 due to the centrifugal force accompanying the rotation of the susceptor 54. Misalignment can be prevented.

  An exhaust plate 50 is provided around the susceptor 54 to close the space between the susceptor 54 and the inner wall of the reaction vessel 46. Exhaust ports 60 are formed in the exhaust plate 50 at a predetermined interval, and the gas supplied to each processing region is exhausted through the exhaust ports 60.

  As shown in FIG. 4, the susceptor 54 is provided with a lifting mechanism 62 that lifts and lowers the susceptor 54. A plurality of through holes 63 are formed in the susceptor 54. The bottom surface of the reaction vessel 46 is provided with a plurality of substrate push-up pins 64 that push up the wafer 2 and support the back surface of the wafer 2 when the wafer 2 is carried into and out of the reaction vessel 46.

  The through hole 63 and the board push-up pin 64 are not in contact with the susceptor 54 when the board push-up pin 64 is raised or when the susceptor 54 is lowered by the lifting mechanism 62. In such a state, they are arranged so as to penetrate the through-hole 63.

  The lifting mechanism 62 is provided with a rotating mechanism 65 that rotates the susceptor 54. A rotating shaft (not shown) of the rotating mechanism 65 is connected to the susceptor 54, and is configured such that the susceptor 54 can be rotated by operating the rotating mechanism 65. Further, a control unit 42 to be described later is connected to the rotation mechanism 65 via a coupling unit 66.

  The coupling part 66 is configured as a slip ring mechanism that is electrically connected by a metal brush or the like between the rotating side and the fixed side, so that the rotation of the susceptor 54 is not hindered by the coupling part 66. ing.

  Further, the control unit 42 is configured to control the power supply to the rotation mechanism 65 so that the susceptor 54 is rotated at a predetermined speed for a predetermined time. As described above, by rotating the susceptor 54, the wafer 2 placed on the susceptor 54 has a first processing region 49, a first purge region 51, a second processing region 52, and a second processing region. The purge area 53 is moved in order.

  A heater 67 as a heating unit is integrally embedded in the susceptor 54 so that the wafer 2 can be heated. When electric power is supplied to the heater 67, the surface of the wafer 2 is heated to a predetermined temperature (for example, room temperature to about 1000 ° C.). Note that a plurality of heaters 67 (for example, five) may be provided on the same surface so as to individually heat each wafer 2 placed on the susceptor 54.

  The susceptor 54 is provided with a temperature sensor 68. A temperature regulator 71, a power regulator 72, and a heater power source 73 are electrically connected to the heater 67 and the temperature sensor 68 via a power supply line 69. Based on the temperature information detected by the temperature sensor 68, the power supply to the heater 67 is controlled.

  A gas supply unit 78 including a first process gas supply unit 74, a second process gas supply unit 75, and an inert gas introduction unit 76 is provided above the reaction vessel 46.

  The first processing gas supply unit 74 includes a shower plate 55, an inner circumferential buffer chamber 57, and an outer circumferential buffer chamber 58, and the shower hole 59 serves as a first gas ejection port. A second gas outlet 79 is provided on the side wall of the second processing gas supply unit 75. Further, a first inert gas outlet 81 and a second inert gas outlet 82 are provided on the side wall of the inert gas introduction portion 76 so as to face each other.

  The gas supply unit 78 supplies the first processing gas from the first processing gas supply unit 74 into the first processing region 49, and the second processing gas supply unit 75 supplies the first processing gas into the second processing region 52. The second processing gas is supplied, and the inert gas is supplied from the inert gas introduction unit 76 into the first purge region 51 and the second purge region 53. The gas supply unit 78 can supply each processing gas and inert gas individually to each region without mixing them, and can supply each processing gas and inert gas to each region in parallel. It is configured.

  An inner circumferential first gas supply pipe 84 is connected to the inner circumferential buffer chamber 57. The inner circumferential first gas supply pipe 84 includes an internal flow rate controller (flow rate control unit) in order from the upstream side. A circumferential mass flow controller (MFC) 85 and an inner circumferential valve 86 as an on-off valve are provided. An outer peripheral first gas supply pipe 87 is connected to the outer peripheral buffer chamber 58, and the outer peripheral side first gas supply pipe 87 is an outer peripheral side which is a flow rate controller (flow rate control unit) in order from the upstream side. An MFC 88 and an outer peripheral valve 89 that is an on-off valve are provided.

  The inner peripheral side first gas supply pipe 84, the inner peripheral side MFC 85, and the inner peripheral side valve 86 constitute an inner peripheral side gas supply unit, and the outer peripheral side first gas supply pipe 87, the outer peripheral side MFC 88, and the outer peripheral side. The valve 89 constitutes an outer peripheral gas supply unit.

  Further, the inner peripheral side first gas supply pipe 84 and the outer peripheral side first gas supply pipe 87 merge on the upstream side to become the first processing gas supply pipe 91, and the first processing gas supply pipe 91 has an upstream side. In order from the side, a first source gas supply source 92, an MFC 93 that is a flow rate controller (flow rate control unit), and a valve 94 that is an on-off valve are provided.

  From the first processing gas supply pipe 91, for example, a silicon-containing gas is supplied as the first gas (first processing gas) through the MFC 93, the valve 94, the inner peripheral side MFC 85, and the inner peripheral side valve 86. The gas is supplied into the side buffer chamber 57 and supplied to the outer peripheral buffer chamber 58 through the MFC 93, the valve 94, the outer peripheral side MFC 88, and the outer peripheral side valve 89. The first processing gas supplied to the inner peripheral buffer chamber 57 and the outer peripheral buffer chamber 58 is supplied into the first processing region 49 through the shower hole 59.

As the silicon-containing gas, for example, a trisilylamine ((SiH ₃ ) ₃ N, abbreviation: TSA) gas can be used as a precursor. Note that the first processing gas may be any of solid, liquid, and gas at normal temperature and pressure, but will be described as a gas here. When the first processing gas is liquid at normal temperature and pressure, a vaporizer (not shown) may be provided between the first source gas supply source 92 and the MFC 93.

As the silicon-containing gas, for example, hexamethyldisilazane (C ₆ H ₁₉ NSi ₂ , abbreviation: HMDS), which is an organic silicon material, can be used in addition to TSA. For example, when a silicon oxide film (SiO ₂ film, hereinafter referred to as an SiO film) is to be formed, the film formation speed is set to a silicon atom (one molecule of silicon-containing gas, which is the first processing gas) ( It is proportional to the number of Si). TSA has three Si atoms in one molecule, whereas HMDS has two Si atoms in one molecule. Further, the silicon content in 1 mol of HMDS is 34.8%, whereas the silicon content in 1 mol of TSA is 75.8%. For this reason, using TSA rather than HDMS can supply more Si atoms with a short exposure, and can improve the deposition rate. In addition, since TSA does not contain an organic component in the molecule, it is considered that an oxide film excellent in electrical insulation can be formed. Therefore, it is preferable to use TSA as the first processing gas. The first processing gas is made of a material having a higher degree of adhesion than a second processing gas described later.

  A second processing gas supply pipe 95 is connected to the upstream side of the second processing gas supply unit 75. The second processing gas supply pipe 95 is provided with a second source gas supply source 96, an MFC 97 as a flow rate controller (flow rate control unit), and a valve 98 as an on-off valve in order from the upstream side.

From the second processing gas supply pipe 95, for example, oxygen (O ₂ ) gas, which is an oxygen-containing gas, is used as the second gas (second processing gas, reaction gas), the MFC 97, the valve 98, and the second processing gas. The gas is supplied into the second processing region 52 through the gas supply unit 75 and the second gas jet port 79. The oxygen gas that is the second processing gas is brought into a plasma state by the plasma generation unit 99 and is exposed onto the wafer 2. The oxygen gas that is the second processing gas may be activated by heat by adjusting the temperature of the heater 67 and the pressure in the reaction vessel 46 to a predetermined range. As the oxygen-containing gas, ozone (O ₃ ) gas or water vapor (H ₂ O) may be used. For the second processing gas, a material having a lower degree of adhesion than the first processing gas is used.

  Mainly, the first processing gas supply pipe 91, the MFC 93, the valve 94, the inner peripheral side first gas supply pipe 84, the inner peripheral side MFC 85, the inner peripheral side valve 86, the outer peripheral side first gas supply pipe 87, the outer peripheral part. The side MFC 88 and the outer peripheral side valve 89 constitute a first processing gas introduction part (also referred to as a silicon-containing gas introduction part) 101. Further, a second processing gas introduction part (oxygen-containing gas introduction part) 102 is mainly constituted by the second processing gas supply pipe 95, the MFC 97 and the valve 98.

  Note that the first source gas supply source 92 and the first process gas supply unit 74 may be included in the first process gas introduction unit 101. Further, the second source gas supply source 96 and the second process gas supply unit 75 may be included in the second process gas introduction unit 102. Further, the first processing gas introduction unit 101 and the second processing gas introduction unit 102 constitute a processing gas introduction unit.

  A first inert gas supply pipe 103 is connected to the upstream side of the inert gas introduction unit 76. The first inert gas supply pipe 103 is provided with a first inert gas supply source 104, an MFC 105 as a flow rate controller (flow rate control unit), and a valve 106 as an on-off valve in order from the upstream side. Yes.

From the first inert gas supply pipe 103, an inert gas made of, for example, nitrogen (N ₂ ) gas is supplied from the MFC 105, the valve 106, the inert gas introduction unit 76, the first inert gas jet 81, and the like. The gas is supplied into the first purge region 51 and the second purge region 53 via the second inert gas outlet 82. The inert gas supplied into the first purge region 51 and the second purge region 53 acts as a purge gas in the film forming process described later. In addition to N ₂ gas, for example, a rare gas such as helium (He) gas, neon (Ne) gas, argon (Ar) gas, or the like can be used as the inert gas.

  The downstream end of the second inert gas supply pipe 107 is connected to the downstream side of the valve 94 of the first process gas supply pipe 91. The second inert gas supply pipe 107 is provided with a second inert gas supply source 108, an MFC 109 as a flow rate controller (flow rate control unit), and a valve 111 as an on-off valve in this order from the upstream side. ing.

From the second inert gas supply pipe 107, for example, N ₂ gas is supplied as an inert gas via the MFC 109, the valve 111, the first process gas supply pipe 91, and the first process gas supply unit 74. Is supplied into the processing area 49. The inert gas supplied into the first processing region 49 acts as a carrier gas or a dilution gas in the film forming process.

  Further, the downstream end of the third inert gas supply pipe 112 is connected to the downstream side of the valve 98 of the second processing gas supply pipe 95. The third inert gas supply pipe 112 is provided with, in order from the upstream side, a third inert gas supply source 113, an MFC 114 that is a flow rate controller (flow rate control unit), and a valve 115 that is an on-off valve. ing.

From the third inert gas supply pipe 112, for example, N ₂ gas is used as the inert gas, such as MFC 114, valve 115, second process gas supply pipe 95, second process gas supply unit 75, and second gas. It is supplied into the second processing region 52 through the jet port 79. The inert gas supplied into the second processing region 52 acts as a carrier gas or a dilution gas in the film forming process, like the inert gas supplied into the first processing region 49.

  A first inert gas supply system is mainly configured by the first inert gas supply pipe 103, the first inert gas supply source 104, the MFC 105, and the valve 106. Note that the inert gas introduction unit 76, the first inert gas jet 81, and the second inert gas jet 82 may be included in the first inert gas supply system.

  In addition, a second inert gas supply system is mainly configured by the second inert gas supply pipe 107, the second inert gas supply source 108, the MFC 109, and the valve 111. Note that the first processing gas supply pipe 91 and the first processing gas supply unit 74 may be included in the second inert gas supply system.

  In addition, a third inert gas supply system is mainly configured by the third inert gas supply pipe 112, the third inert gas supply source 113, the MFC 114, and the valve 115. Note that the second processing gas supply pipe 95, the second processing gas supply unit 75, and the second gas outlet 79 may be included in the third inert gas supply system. Furthermore, an inert gas supply system is mainly constituted by the first inert gas supply system to the third inert gas supply system.

  As shown in FIG. 4, the atmosphere in the first processing region 49, the first purge region 51, the second processing region 52, and the second purge region 53 is exhausted to the reaction vessel 46. An exhaust pipe 116 is provided. The exhaust pipe 116 is evacuated through a flow rate adjustment valve 117 as a flow rate controller (flow rate control unit) for controlling the gas flow rate and an APC (Auto Pressure Controller) valve 118 as a pressure regulator (pressure adjustment unit). A vacuum pump 119 as an exhaust device is connected, and is configured so that vacuum exhaust can be performed so that the pressure in the reaction vessel 46 becomes a predetermined pressure (degree of vacuum). The APC valve 118 is an open / close valve that can open and close the valve to evacuate or stop evacuation of the reaction vessel 46, and further adjust the valve opening to adjust the pressure. An exhaust system is mainly configured by the exhaust pipe 116, the flow rate adjusting valve 117, and the APC valve 118. Further, a vacuum pump 119 may be included in the exhaust system.

  The atmosphere in the first processing region 49, the first purge region 51, the second processing region 52, and the second purge region 53 is exhausted from the exhaust pipe 116 through the exhaust port 60. Thus, when the vacuum pump 119 is operated, the area below the exhaust plate 50 becomes negative pressure.

  The substrate processing apparatus 1 includes a control unit 42 that controls the operation of each unit of the substrate processing apparatus 1. The control unit 42 has at least a calculation unit and a storage unit. The control unit 42 is connected to each configuration described above, calls a program or recipe from the storage unit in accordance with an instruction from the host controller or the user, and controls the operation of each configuration in accordance with the contents. The control unit 42 may be configured as a dedicated computer or a general-purpose computer. For example, an external storage device (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, a USB memory (USB Flash Drive) or a memory card storing the above-described program. The control unit 42 according to the present embodiment can be configured by preparing a semiconductor memory) and installing a program in a general-purpose computer using an external storage device. The means for supplying the program to the computer is not limited to supplying the program via an external storage device. For example, the program may be supplied without using an external storage device by using communication means such as the Internet or a dedicated line. The storage unit and the external storage device are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. In the present specification, when the term “recording medium” is used, it may include only a storage unit, only an external storage device, or both.

  Hereinafter, the peripheral structure of the susceptor 54 controlled by the control unit 42 and the operation of the susceptor 54 will be described.

  The reaction container 46 is provided with the first transfer chamber housing 8 so as to be adjacent to one another through any one of the gate valves 37 to 40. For example, when the gate valve 38 is opened, the inside of the reaction vessel 46 and the first transfer chamber casing 8 are communicated with each other. The first substrate transfer machine 6 conveys the wafer 2 between the pod 4 and the substrate placement unit 61 of the susceptor 54 via the second substrate transfer machine 19.

  Here, the susceptor 54 is formed with a plurality of substrate mounting portions 61 for mounting the wafer 2 so as to straddle the surface facing the inner circumferential buffer chamber 57 and the surface facing the outer circumferential buffer chamber 58. Yes. In the present embodiment, five substrate mounting portions 61 are provided so as to be equally spaced from each other in the forward clockwise direction (for example, at an interval of 72 °). The two substrate platforms 61 are rotated together.

  Next, with reference to FIGS. 7 and 8, a substrate processing process performed using a process chamber 45 including a reaction vessel 46 as one process of the semiconductor manufacturing process according to the present embodiment will be described. FIG. 7 is a flowchart showing a substrate processing process according to the present embodiment, and FIG. 8 is a flowchart showing a process for the wafer 2 in the film forming process in the substrate processing process according to the present embodiment. In the following description, the operation of each component of the process chamber 45 of the substrate processing apparatus 1 is controlled by the control unit 42.

  Here, trisilylamine (TSA), which is a silicon-containing gas, is used as the first processing gas, oxygen gas, which is an oxygen-containing gas, is used as the second processing gas, and an SiO film is formed as an insulating film on the wafer 2. An example of forming the will be described.

STEP: 01 (Board loading / mounting process)
First, the substrate push-up pin 64 is raised to the transfer position of the wafer 2, and the substrate push-up pin 64 is passed through the through hole 63 of the susceptor 54. As a result, the substrate push-up pin 64 protrudes from the surface of the susceptor 54 by a predetermined height. Subsequently, the gate valve 38 is opened, and a predetermined number (for example, five) of wafers 2 (processing substrates) are loaded into the reaction container 46 using the first substrate transfer device 6. Then, the susceptor 54 is placed on the same surface of the susceptor 54 so that the wafers 2 do not overlap with each other about a rotation shaft (not shown). As a result, the wafer 2 is supported in a horizontal posture on the substrate push-up pins 64 protruding from the surface of the susceptor 54.

  After the wafer 2 is loaded into the reaction vessel 46, the first substrate transfer device 6 is moved out of the reaction vessel 46, the gate valve 38 is closed, and the inside of the reaction vessel 46 is sealed. Thereafter, the substrate push-up pin 64 is lowered to place the substrate mounted on the susceptor 54 on the bottom surface of each of the first processing region 49, the first purge region 51, the second processing region 52, and the second purge region 53. The wafer 2 is placed on the placement unit 61.

When the wafer 2 is carried into the reaction vessel 46, N ₂ gas as a purge gas is supplied from the inert gas supply system into the reaction vessel 46 while the reaction vessel 46 is exhausted by the exhaust system. It is preferable. That is, by operating the vacuum pump 119 and opening the APC valve 118, while exhausting the inside of the reaction vessel 46, at least the valve 106 of the first inert gas supply system is opened, and thereby N ₂ is introduced into the reaction vessel 46. It is preferable to supply gas.

  Thereby, intrusion of particles into the first processing region 49 and second processing region 52 and adhesion of particles onto the wafer 2 can be suppressed. Here, an inert gas may be further supplied from the second inert gas supply system and the third inert gas supply system. The vacuum pump 119 is always operated at least from the substrate carry-in / placement step (STEP: 01) to the completion of the substrate carry-out step (STEP: 04) described later.

STEP: 02 (temperature increase and pressure adjustment process)
Subsequently, electric power is supplied to the heater 67 embedded in the susceptor 54 to heat the surface of the wafer 2 to a predetermined temperature (for example, 200 ° C. or higher and 400 ° C. or lower). At this time, the temperature of the heater 67 is adjusted by controlling the power supply to the heater 67 based on the temperature information detected by the temperature sensor 68.

  In the heat treatment of the wafer 2 made of silicon, if the surface temperature is heated to 750 ° C. or more, impurity diffusion occurs in the source region and the drain region formed on the surface of the wafer 2, and the circuit characteristics are improved. It may deteriorate and the performance of the semiconductor device may deteriorate. By limiting the temperature of the wafer 2 as described above, it is possible to suppress the diffusion of impurities in the source region and drain region formed on the surface of the wafer 2, deterioration of circuit characteristics, and deterioration of the performance of the semiconductor device.

  Further, the inside of the reaction vessel 46 is evacuated by a vacuum pump 119 so that the inside of the reaction vessel 46 has a desired pressure (for example, 0.1 Pa to 300 Pa, preferably 20 Pa to 40 Pa). At this time, the pressure in the reaction vessel 46 is measured by a pressure sensor (not shown), and the opening degree of the APC valve 118 is feedback controlled based on the measured pressure information.

  Further, while the wafer 2 is heated, the rotation mechanism 65 is operated to start the rotation of the susceptor 54. At this time, the rotation speed of the susceptor 54 is controlled by the control unit 42. The rotation speed of the susceptor 54 is, for example, 1 rotation / second. By rotating the susceptor 54, the wafer 2 starts to move in the order of the first processing region 49, the first purge region 51, the second processing region 52, and the second purge region 53. Wafer 2 passes.

STEP: 03 (film formation process)
Next, for example, trisilylamine (TSA) gas containing silicon is supplied into the first processing region 49 as the first processing gas, and oxygen as the second processing gas is supplied into the second processing region 52. The film forming process will be described by taking as an example a process of supplying a gas and forming a SiO film on the wafer 2. In the following description, TSA gas supply, oxygen gas supply, and inert gas supply are performed in parallel in each region.

  After the wafer 2 is heated to reach a desired temperature and the susceptor 54 reaches a desired rotational speed, at least the valve 94, the inner peripheral side valve 86, the outer peripheral side valve 89, the valve 98 and the valve 106 are opened, and the first The supply of the processing gas to the processing region 49 and the second processing region 52 and the supply of the inert gas to the first purge region 51 and the second purge region 53 are started.

That is, the valve 94, the inner peripheral side valve 86, and the outer peripheral side valve 89 are opened to start the supply of TSA gas into the first processing area 49, and at the same time, the valve 98 is opened to enter the second processing area 52. Oxygen gas is supplied, and at the same time, the valve 106 is opened to supply N ₂ gas, which is an inert gas, into the first purge region 51 and the second purge region 53. At this time, the APC valve 118 is adjusted appropriately, and the pressure in the reaction vessel 46 is set to a pressure in the range of 10 Pa to 1000 Pa, for example, 300 Pa. Further, the temperature of the heater 67 at this time is set to such a temperature that the temperature of the wafer 2 becomes a temperature within a range of 200 ° C. to 400 ° C., for example.

  Specifically, the valve 94, the inner peripheral valve 86, and the outer peripheral valve 89 are opened, and the first processing gas supply pipe 91 to the inner peripheral first gas supply pipe 84 and the outer peripheral first gas supply pipe are opened. 87, TSA gas is supplied into the first processing region 49 through the first processing gas supply unit 74 and the shower hole 59. When the TSA gas comes into contact with the wafer 2, a silicon-containing layer as the first element-containing layer is formed. At this time, the TSA gas is supplied to the inner peripheral side and the outer peripheral side through the shower holes 59. When supplying the gas, the supply amount is controlled according to the conditions of the processing chamber as described above.

  The TSA gas supplied into the first processing region 49 through the shower hole 59 is exhausted from the exhaust pipe 116 through the exhaust port 60. At this time, since the pressure below the exhaust plate 50 is negative, the TSA gas is exhausted from the exhaust port 60 in the first processing region 49 without entering the other region from below the exhaust plate 50.

  At this time, the MFC 93 is adjusted so that the flow rate of the TSA gas becomes a predetermined flow rate, and the TSA gas supplied to the inner peripheral side buffer chamber 57 and the outer peripheral side buffer chamber 58 has a predetermined flow rate distribution. The inner peripheral side MFC 85 and the outer peripheral side MFC 88 are adjusted. The supply flow rate of the TSA gas controlled by the MFC 93 is, for example, a flow rate in the range of 1.5 SLM to 5.0 SLM.

  At this time, by controlling the gas flow rate ratio supplied to the inner circumferential buffer chamber 57 and the outer circumferential buffer chamber 58, the gradient of the flow velocity distribution in the first processing region 49 is obtained as the average velocity value (m / s). ) To −0.009 [(m / s) / mm] to 0.0025 [(m / s) / mm].

When the TSA gas is supplied into the first processing region 49 through the inner peripheral buffer chamber 57 and the outer peripheral buffer chamber 58, the valve 111 is opened and the carrier gas is supplied from the second inert gas supply pipe 107. Alternatively, it is preferable to supply N ₂ gas as a dilution gas into the first processing region 49. Thereby, the supply of TSA gas into the first processing region 49 can be promoted.

  Simultaneously with the valve 94, the valve 98 is opened, and oxygen gas is supplied from the second processing gas supply pipe 95 to the second processing region 52 through the second processing gas supply unit 75 and the second gas jet port 79. However, the air is exhausted from the exhaust pipe 116 through the exhaust port 60. At this time, the MFC 97 is adjusted so that the flow rate of the oxygen gas becomes a predetermined flow rate. The supply flow rate of oxygen gas controlled by the MFC 97 is, for example, a flow rate in the range of 1000 sccm to 10,000 sccm.

When supplying oxygen gas into the second processing region 52, the valve 115 is opened, and N ₂ gas as carrier gas or dilution gas is supplied from the third inert gas supply pipe 112 to the second processing region 52. It is preferable to supply inside. Thereby, supply of oxygen gas into the second processing region 52 can be promoted.

At the same time that the valve 94 and the valve 98 are opened, the valve 106 is further opened, and N ₂ gas, which is an inert gas as a purge gas, is supplied from the first inert gas supply pipe 103 to the inert gas introduction unit 76, the first gas. The exhaust gas is exhausted while being supplied to the first purge region 51 and the second purge region 53 via the inert gas jet port 81 and the second inert gas jet port 82, respectively. At this time, the MFC 105 is adjusted so that the flow rate of the N ₂ gas becomes a predetermined flow rate.

  The inert gas is ejected into the first processing region 49 and the second processing region 52 through the gap between the end portion of the partition plate 48 and the side wall of the reaction vessel 46, thereby Intrusion of the processing gas into the first purge region 51 and the second purge region 53 can be suppressed.

  Along with the start of gas supply, high-frequency power is supplied from a high-frequency power source (not shown) to the plasma generation unit 99 provided above the second processing region 52. The oxygen gas that has been supplied into the second processing region 52 and has passed under the plasma generating unit 99 becomes a plasma state in the second processing region 52, and active species contained therein are supplied to the wafer 2.

  Oxygen gas has a high reaction temperature, and it is difficult to react with the pressure in the wafer 2 and the reaction vessel 46 as described above. However, as in this embodiment, the oxygen gas is converted into a plasma state and active species contained therein are supplied. In this way, the film forming process can be performed even in a temperature range of 400 ° C. or lower, for example. When the required processing temperature is different between the first processing gas and the second processing gas, the heater 67 is controlled in accordance with the lower processing gas temperature to increase the processing temperature. The processing gas may be supplied in a plasma state.

  In this way, by using plasma, the wafer 2 can be processed at a low temperature, and for example, it is possible to suppress thermal damage to the wafer 2 having a wiring weak to heat such as aluminum. Further, the generation of foreign substances such as products due to incomplete reaction of the processing gas can be suppressed, and the uniformity and withstand voltage characteristics of the thin film formed on the wafer 2 can be improved. In addition, the high oxidizing power of the oxygen gas in a plasma state can improve the productivity of substrate processing, such as shortening the oxidation processing time.

As described above, by rotating the susceptor 54, the wafer 2 repeatedly moves in the order of the first processing region 49, the first purge region 51, the second processing region 52, and the second purge region 53. Therefore, as shown in the flowchart of FIG. 8, the wafer 2 is supplied with a TSA gas, an N ₂ gas (purge), an oxygen gas in a plasma state, and an N ₂ gas supply (purge). Are alternately performed a predetermined number of times. Here, the details of the film forming process sequence in STEP: 03 will be described with reference to FIG.

STEP: 11 (passed through the first processing area)
First, TSA gas is supplied to the surface of the wafer 2 that has passed through the first processing region 49 and the portion of the susceptor 54 where the wafer 2 is not placed, and a silicon-containing layer is formed on the wafer 2.

STEP: 12 (passed through first purge region)
Next, the wafer 2 on which the silicon-containing layer is formed passes through the first purge region 51. At this time, N ₂ gas which is an inert gas is supplied to the first purge region 51.

STEP: 13 (passed through second processing area)
Next, oxygen gas is supplied to the wafer 2 that has passed through the second processing region 52 and the portion of the susceptor 54 where the wafer 2 is not placed, and a silicon oxide layer (SiO layer) is formed on the wafer 2. . That is, the oxygen gas reacts with a part of the silicon-containing layer formed on the wafer 2 in the first processing region 49. As a result, the silicon-containing layer is oxidized and modified into a SiO layer containing silicon and oxygen as the second element.

STEP: 14 (passed through second purge region)
Then, the wafer 2 on which the SiO layer is formed in the second processing region 52 passes through the second purge region 53. At this time, N ₂ gas which is an inert gas is supplied to the _second purge region 53.

STEP: 15 (check number of cycles)
In this way, one rotation of the susceptor 54 is defined as one cycle, that is, the passage of the wafer 2 through the first processing region 49, the first purge region 51, the second processing region 52, and the second purge region 53 is one cycle. By performing this cycle at least once, a SiO film having a predetermined thickness can be formed on the wafer 2.

  Here, it is determined whether or not the above cycle has been performed a predetermined number of times. If the cycle has been performed a predetermined number of times, it is determined that the desired film thickness has been reached, and the film forming process is terminated. If the cycle has not been performed a predetermined number of times, it is determined that the desired film thickness has not been reached, and the process returns to STEP 11 to continue the cycle process.

  FIG. 9A is a graph comparing the film thickness distribution for each flow rate ratio of the TSA gas supplied to the inner circumferential buffer chamber 57 and the outer circumferential buffer chamber 58 for the thin film generated on the wafer 2 at the end of one cycle. FIG. 9B is an explanatory diagram for explaining the relationship between the supply direction of the TSA gas to the wafer 2 and the revolution direction of the wafer 2.

  In FIG. 9A, B1 = 100% indicates the film thickness distribution when the flow rate ratio of the TSA gas supplied to the inner circumferential buffer chamber 57 and the outer circumferential buffer chamber 58 is 1: 0, and B1 = 50%. Indicates the film thickness distribution when the flow rate ratio of the TSA gas supplied to the inner circumferential buffer chamber 57 and the outer circumferential buffer chamber 58 is 1: 1, and B1 = 25% is the inner circumferential buffer chamber 57 and the outer circumferential side. The film thickness distribution when the flow rate ratio of the TSA gas supplied to the buffer chamber 58 is 1: 3 is shown, and B1 = 0% is the TSA gas supplied to the inner peripheral buffer chamber 57 and the outer peripheral buffer chamber 58. The film thickness distribution when the flow rate ratio is 0: 1 is shown. In FIG. 9B, an arrow 121 indicates the direction in which the TSA gas flows, and an arrow 122 indicates the revolution direction of the wafer 2.

  As shown in FIG. 9A, by changing the flow rate ratio of the TSA gas supplied to the inner circumferential buffer chamber 57 and the outer circumferential buffer chamber 58, the film thickness is inclined on the upstream side and the downstream side of the wafer 2. I found out that From this, the controllability of the film thickness distribution of the thin film produced on the wafer 2 by controlling the flow rate ratio of the gas supplied to the shower plate 55 and the inner and outer buffer chambers 57 and 58. Can be improved.

  In STEP: 15, the above-described cycle is performed a predetermined number of times, and after determining that the SiO film having a desired film thickness is formed on the wafer 2, at least the valve 94 and the valve 98 are closed, and the TSA gas and oxygen gas are turned on. The supply to the first processing area 49 and the second processing area 52 is stopped. At this time, the power supply to the plasma generation unit 99 is also stopped. Further, the energization amount of the heater 67 is controlled to lower the temperature, or the energization to the heater 67 is stopped. Further, the rotation of the susceptor 54 is stopped.

STEP: 04 (Substrate unloading process)
When the film forming process of STEP: 03 (STEP: 11 to STEP: 15) is completed, the wafer 2 is unloaded as follows.

  First, the substrate push-up pins 64 are raised, and the wafer 2 is supported on the substrate push-up pins 64 protruding from the surface of the susceptor 54. Next, the gate valve 38 is opened, the wafer 2 is unloaded from the reaction vessel 46 using the first substrate transfer device 6, and the substrate processing step according to this embodiment is completed.

  In the above, the conditions such as the temperature of the wafer 2, the pressure of the reaction vessel 46, the flow rate of each gas, the power applied to the plasma generating unit 99, the processing time, etc. Adjust as desired.

STEP: 05 (confirmation of processing count)
In STEP: 05, it is determined whether or not the cycle from the substrate carry-in / placement step (STEP: 01) to the substrate carry-out step (STEP: 04) has been performed a predetermined number of times. Here, the “predetermined number of times” refers to the number of times the film forming process is continued and a film having a predetermined thickness is formed.

  This number is set in advance by deriving the number of processes that require cleaning by simulation or the like.

  As described above, in this embodiment, the shower plate 55 is provided in the first processing region 49, and the area ratio between the areas of the ring-shaped area obtained by subdividing the shower plate 55 in the radial direction is constant. Since the plurality of shower holes 59 are formed so that the gas flow rate is equal to the flow rate of the gas discharged from the shower holes 59 in the first processing region 49, the shower holes 59 are generated on the wafer 2. The film thickness and film quality uniformity of the thin film can be improved.

  In this embodiment, the separator 56 divides the buffer chamber above the shower plate 55 into an inner peripheral buffer chamber 57 and an outer peripheral buffer chamber 58, and processes them into the inner peripheral buffer chamber 57 and the outer peripheral buffer chamber 58, respectively. Gas can be supplied. Therefore, by controlling the flow rate ratio of the processing gas supplied to the inner peripheral buffer chamber 57 and the outer peripheral buffer chamber 58, the gas flow velocity distribution in the first processing region 49 can be controlled. The gas concentration can be made uniform by controlling the flow rate ratio of the processing gas on the basis of the gas flow rate distribution in the region where the processing gas concentration difference is present on the downstream side and the film formed on the wafer 2. Thickness and film quality uniformity can be improved.

  Further, by controlling the gas concentration distribution in the first processing region 49 based on the gas flow velocity distribution, the supply amount of the processing gas supplied into the first processing region 49 can be optimized. Further, it is possible to reduce the consumption of the raw material by suppressing the excessive supply of the processing gas.

  Even if the total flow rate and the processing pressure of the processing gas supplied to the inner circumferential buffer chamber 57 and the outer circumferential buffer chamber 58 are changed, the flow rate ratio is the same in the first processing region 49. Even if the average gas flow rate changes, the tendency of the flow rate distribution does not change, so that the influence on the film thickness distribution due to the change of the processing conditions can be reduced.

  Further, since the flow velocity distribution of the processing gas in the first processing region 49 can be controlled, when the processing conditions such as processing pressure, gas type, gas flow rate, etc. are changed, the inner peripheral buffer chamber 57 and the outer peripheral buffer chamber 58 are changed. By changing the flow rate ratio of the processing gas supplied to the chamber, optimization can be performed without replacing parts such as the shower plate 55, and costs can be reduced and workability can be improved.

  In this embodiment, the buffer chamber above the shower plate 55 is divided by the separator 56 into two, ie, an inner peripheral buffer chamber 57 and an outer peripheral buffer chamber 58. However, three or more buffer chambers are used. You may divide into. By dividing into three or more buffer chambers, the gas flow velocity distribution and gas concentration in the first processing region 49 can be controlled more precisely.

  Further, in this embodiment, the diameters of the shower holes 59 in the inner peripheral buffer chamber 57 and the outer peripheral buffer chamber 58 are all the same, but as shown in FIG. By changing the diameter of the shower hole 59, the gas flow velocity distribution and concentration distribution in the first processing region 49 may be controlled. In this case, since the supply system of the processing gas supplied to the buffer chamber may be one, cost can be reduced.

  Furthermore, in this embodiment, the shower plate 55 and the separator 56 are provided only in the first processing region 49, but the first purge region 51, the second processing region 52, and the second purge region 53 are provided. Needless to say, the gas flow rate distribution and the gas concentration distribution in the processing region may be controlled by controlling the gas flow rate ratio.

  Although the present embodiment has been specifically described above, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention.

In the above-described embodiment, a silicon-containing gas and an oxygen-containing gas are used as the processing gas and the SiO film is formed on the wafer 2, but the present invention is not limited to this. That is, for example, a hafnium oxide film (HfO film) using a hafnium (Hf) -containing gas and an oxygen-containing gas, a zirconium (Zr) -containing gas and an oxygen-containing gas, a titanium (Ti) -containing gas, and an oxygen-containing gas as a processing gas. Alternatively, a high-k film such as a zirconium oxide film (ZrO film) or a titanium oxide film (TiO film) may be formed on the wafer 2. In addition to the oxygen-containing gas, ammonia (NH ₃ ) gas, which is a nitrogen (N) -containing gas, or the like may be used as the processing gas to be converted into plasma.

  In the above-described embodiment, oxygen gas is supplied to the processing chamber, and the plasma is generated by the plasma generation unit 99. However, the present invention is not limited to this, a remote plasma method for generating plasma outside the processing chamber, Ozone with a high energy level may be used.

  In the above-described embodiment, the inert gas introduction unit 76 of the gas supply unit 78 is shared by the first purge region 51 and the second purge region 53. However, the inert gas introduction unit 76 is individually provided. It may be provided.

  In the above-described embodiment, the wafer push-up pins 64 are moved up and down to move the wafer 2 to the processing position and the transfer position. You may move to a position or a conveyance position.

  In the above-described embodiment, the supply is performed by the inner circumferential buffer chamber 57 and the outer circumferential buffer chamber 58, but the present invention is not limited to this, and a plurality of buffer chambers may be provided in the radial direction of the susceptor 54. In that case, gas supply control corresponding to each buffer chamber is performed.

(Appendix)
The present invention includes the following embodiments.

<Appendix 1>
According to one aspect of the invention,
A substrate mounting table provided in the processing chamber;
A plurality of substrate platforms arranged on the same circumference centered on the center of the substrate platform;
A first gas buffer provided with a first gas supply surface provided with a gas supply hole for introducing a processing gas into the processing chamber at a position facing the substrate mounting table;
A second gas buffer provided with a second gas supply surface provided with a gas supply hole for introducing a processing gas into the processing chamber at a position facing the substrate mounting table;
A first gas supply unit for supplying the processing gas to the first gas buffer;
A second gas supply unit for supplying the processing gas to the second gas buffer;
A rotation mechanism for rotating the substrate mounting table,
The second gas supply surface is provided with a substrate processing apparatus provided between the first gas supply surface and the center of the substrate mounting table.

<Appendix 2>
The apparatus according to appendix 1, preferably,
The first gas supply unit and the first gas supply unit may be different from a supply amount of the processing gas supplied to the first gas buffer and a supply amount of the processing gas supplied to the second gas buffer. And a control unit configured to control each of the two gas supply units.

<Appendix 3>
The apparatus according to appendix 2, preferably,
The control unit is configured such that a supply amount of the processing gas supplied to the first gas buffer and a supply amount of the processing gas supplied to the second gas buffer are respectively on the first gas supply surface. The supply amount is set based on an area ratio of the total opening area of the gas supply holes provided and the total opening area of the gas supply holes provided on the second gas supply surface. The first gas supply unit and the second gas supply unit are respectively controlled.

<Appendix 4>
The apparatus according to appendix 3, preferably,
The control unit includes an area ratio of a sum of opening areas of the gas supply holes provided in the second gas supply surface to a total opening area of the gas supply holes provided in the first gas supply surface; The first gas supply unit is configured such that a ratio of a supply amount of the processing gas supplied to the second gas buffer to a supply amount of the processing gas supplied to the first gas buffer is equal. And the second gas supply unit.

<Appendix 5>
The apparatus according to appendix 3, preferably,
The control unit is based on an area ratio of a total opening area of the gas supply holes provided in the second gas supply surface to a total opening area of the gas supply holes provided in the first gas supply surface. In addition, the first gas supply unit may increase the ratio of the supply amount of the processing gas supplied to the second gas buffer to the supply amount of the processing gas supplied to the first gas buffer. And the second gas supply unit.

<Appendix 6>
The apparatus according to appendix 3, preferably,
The control unit is based on an area ratio of a total opening area of the gas supply holes provided in the second gas supply surface to a total opening area of the gas supply holes provided in the first gas supply surface. In addition, the first gas supply unit may reduce the ratio of the supply amount of the processing gas supplied to the second gas buffer to the supply amount of the processing gas supplied to the first gas buffer. And the second gas supply unit.

<Appendix 7>
The apparatus according to appendix 1, preferably,
The processing chamber has a plurality of processing regions formed by dividing the processing chamber in the circumferential direction of the substrate mounting table, and the first gas supply surface and the second gas supply surface are at least the It is provided in one of a plurality of processing areas.

<Appendix 8>
The apparatus according to appendix 7, preferably,
At least one of the plurality of processing regions is provided with a shower plate that constitutes the first gas supply surface and the second gas supply surface and covers the entire top surface of the processing region.

<Appendix 9>
The apparatus according to appendix 8, preferably,
The first gas buffer and the second gas buffer are provided by a separator provided so that a space formed between the shower plate and a ceiling portion of the processing region extends in a circumferential direction of the substrate mounting table. It is formed by being divided.

<Appendix 10>
The apparatus according to appendix 7, preferably,
The plurality of processing regions are divided by a divided structure.

<Appendix 11>
The apparatus according to appendix 1, preferably,
The first gas buffer is formed between the first gas supply surface and the ceiling of the processing chamber, and the second gas buffer is formed of the second gas supply surface and the ceiling of the processing chamber. It is formed between the parts.

<Appendix 12>
The apparatus according to appendix 1, preferably,
The area ratio between the total opening area of the gas supply holes provided on the first gas supply surface and the area of the first gas supply surface is determined by the gas supply provided on the second gas supply surface. It is the same as the area ratio between the sum of the opening areas of the holes and the area of the second gas supply surface.

<Appendix 13>
The apparatus according to appendix 8, preferably,
The shower plate is provided in a fan shape over the entire upper surface of at least one of the plurality of processing regions.

<Appendix 14>
The apparatus according to appendix 1, preferably,
The first gas supply unit includes a first gas supply control unit that controls a supply amount of the processing gas supplied to the first gas buffer, and the second gas supply unit includes the second gas supply unit. A second gas supply control unit that controls the supply amount of the processing gas supplied to the gas buffer.

<Appendix 15>
According to another aspect of the invention,
A substrate mounting table provided in the processing chamber;
A plurality of substrate platforms arranged on the same circumference centered on the center of the substrate platform;
A first gas buffer provided with a first gas supply surface provided with a gas supply hole for introducing a processing gas into the processing chamber at a position facing the substrate mounting table;
A second gas buffer provided with a second gas supply surface provided with a gas supply hole for introducing a processing gas into the processing chamber at a position facing the substrate mounting table,
A step of processing a substrate using a substrate processing apparatus in which the second gas supply surface is provided between the first gas supply surface and the center of the substrate mounting table;
The step of processing the substrate comprises:
Placing the substrate on the substrate platform;
Starting rotation of the substrate mounting table around the center of the substrate mounting table;
Supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer;
A method for manufacturing a semiconductor device or a substrate processing method is provided.

<Appendix 16>
The method according to appendix 15, preferably,
In the step of supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer, the supply amount of the processing gas supplied into the first gas buffer And the processing gas is supplied such that the supply amount of the processing gas supplied into the second gas buffer is different.

<Appendix 17>
The method according to appendix 16, preferably,
In the step of supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer, an opening of the gas supply hole provided in the first gas supply surface is provided. Based on the area ratio of the total area and the total opening area of the gas supply holes provided in the second gas supply surface, the supply amount of the processing gas supplied into the first gas buffer and the A ratio of the supply amount of the processing gas supplied into the second gas buffer is set.

<Appendix 18>
The method according to appendix 17, preferably,
In the step of supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer, an opening of the gas supply hole provided in the first gas supply surface is provided. The area ratio of the sum of the opening areas of the gas supply holes provided in the second gas supply surface with respect to the sum of the areas and the supply amount of the processing gas supplied to the first gas buffer. The ratio of the supply amount of the processing gas supplied to the gas buffer is equal.

<Appendix 19>
The method according to appendix 17, preferably,
In the step of supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer, an opening of the gas supply hole provided in the first gas supply surface is provided. The second to the supply amount of the processing gas supplied to the first gas buffer is larger than the area ratio of the total opening area of the gas supply holes provided in the second gas supply surface to the total area. The ratio of the supply amount of the processing gas supplied to the gas buffer is large.

<Appendix 20>
The method according to appendix 17, preferably,
In the step of supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer, an opening of the gas supply hole provided in the first gas supply surface is provided. The second to the supply amount of the processing gas supplied to the first gas buffer is larger than the area ratio of the total opening area of the gas supply holes provided in the second gas supply surface to the total area. The ratio of the supply amount of the processing gas supplied to the gas buffer is small.

<Appendix 21>
According to another aspect of the invention,
A substrate mounting table provided in the processing chamber;
A plurality of substrate platforms arranged on the same circumference centered on the center of the substrate platform;
A first gas buffer provided with a first gas supply surface provided with a gas supply hole for introducing a processing gas into the processing chamber at a position facing the substrate mounting table;
A second gas buffer provided with a second gas supply surface provided with a gas supply hole for introducing a processing gas into the processing chamber at a position facing the substrate mounting table,
The second gas supply surface controls a substrate processing apparatus provided between the first gas supply surface and the center of the substrate mounting table to cause a computer to execute a predetermined procedure for processing a substrate. A program or a computer-readable recording medium that records the program,
The predetermined procedure is:
A procedure for placing the substrate on the substrate placing portion;
A procedure for starting rotation of the substrate mounting table around the center of the substrate mounting table;
Supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer;
There is provided a program or a recording medium.

  According to the present invention, it is possible to improve the uniformity of the film thickness formed on the substrate.

DESCRIPTION OF SYMBOLS 1 ... Substrate processing apparatus, 2 ... Wafer, 42 ... Control part, 45 ... Process chamber, 54 ... Susceptor, 55 ... Shower plate, 57 ... Inner peripheral side buffer chamber 58 ... Outer peripheral side buffer chamber, 59 ... Shower hole, 61 ... Substrate placement unit, 101 ... First processing gas introduction unit, 102 ... Second processing gas introduction unit

Claims (18)

A substrate mounting table provided in the processing chamber;
A plurality of substrate platforms arranged on the same circumference centered on the center of the substrate platform;
A first gas buffer provided with a first gas supply surface provided with a gas supply hole for introducing a processing gas into the processing chamber at a position facing the substrate mounting table;
A second gas buffer provided with a second gas supply surface provided with a gas supply hole for introducing a processing gas into the processing chamber at a position facing the substrate mounting table;
A first gas supply unit for supplying the processing gas to the first gas buffer;
A second gas supply unit for supplying the processing gas to the second gas buffer;
A rotation mechanism for rotating the substrate mounting table,
The substrate processing apparatus, wherein the second gas supply surface is provided between the first gas supply surface and the center of the substrate mounting table. The first gas supply unit and the first gas supply unit may be different from a supply amount of the processing gas supplied to the first gas buffer and a supply amount of the processing gas supplied to the second gas buffer. The substrate processing apparatus according to claim 1, further comprising a control unit configured to control each of the two gas supply units. The control unit is configured such that a supply amount of the processing gas supplied to the first gas buffer and a supply amount of the processing gas supplied to the second gas buffer are respectively on the first gas supply surface. The supply amount is set based on an area ratio of the total opening area of the gas supply holes provided and the total opening area of the gas supply holes provided on the second gas supply surface. The substrate processing apparatus according to claim 2, wherein the substrate processing apparatus is configured to control each of a first gas supply unit and the second gas supply unit. The control unit includes an area ratio of a sum of opening areas of the gas supply holes provided in the second gas supply surface to a total opening area of the gas supply holes provided in the first gas supply surface; The first gas supply unit is configured such that a ratio of a supply amount of the processing gas supplied to the second gas buffer to a supply amount of the processing gas supplied to the first gas buffer is equal. The substrate processing apparatus according to claim 3, wherein the substrate processing apparatus is configured to respectively control the second gas supply unit. The control unit is based on an area ratio of a total opening area of the gas supply holes provided in the second gas supply surface to a total opening area of the gas supply holes provided in the first gas supply surface. In addition, the first gas supply unit may increase the ratio of the supply amount of the processing gas supplied to the second gas buffer to the supply amount of the processing gas supplied to the first gas buffer. The substrate processing apparatus according to claim 3, wherein the substrate processing apparatus is configured to respectively control the second gas supply unit. The control unit is based on an area ratio of a total opening area of the gas supply holes provided in the second gas supply surface to a total opening area of the gas supply holes provided in the first gas supply surface. In addition, the first gas supply unit may reduce the ratio of the supply amount of the processing gas supplied to the second gas buffer to the supply amount of the processing gas supplied to the first gas buffer. The substrate processing apparatus according to claim 3, wherein the substrate processing apparatus is configured to respectively control the second gas supply unit. The processing chamber has a plurality of processing regions formed by dividing the processing chamber in the circumferential direction of the substrate mounting table, and the first gas supply surface and the second gas supply surface are at least the The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is provided in one of the plurality of processing regions. The shower plate that constitutes the first gas supply surface and the second gas supply surface and covers the entire upper surface of the processing region is provided in at least one of the plurality of processing regions. Substrate processing equipment. The first gas buffer and the second gas buffer are provided by a separator provided so that a space formed between the shower plate and a ceiling portion of the processing region extends in a circumferential direction of the substrate mounting table. The substrate processing apparatus according to claim 8, wherein the substrate processing apparatus is formed by being divided. The substrate processing apparatus according to claim 7, wherein the plurality of processing regions are divided by a divided structure. The first gas buffer is formed between the first gas supply surface and the ceiling of the processing chamber, and the second gas buffer is formed of the second gas supply surface and the ceiling of the processing chamber. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is formed between the first and second portions. A substrate mounting table provided in the processing chamber;
A plurality of substrate platforms arranged on the same circumference centered on the center of the substrate platform;
A first gas buffer provided with a first gas supply surface provided with a gas supply hole for introducing a processing gas into the processing chamber at a position facing the substrate mounting table;
A second gas buffer provided with a second gas supply surface provided with a gas supply hole for introducing a processing gas into the processing chamber at a position facing the substrate mounting table,
A step of processing a substrate using a substrate processing apparatus in which the second gas supply surface is provided between the first gas supply surface and the center of the substrate mounting table;
The step of processing the substrate comprises:
Placing the substrate on the substrate platform;
Starting rotation of the substrate mounting table around the center of the substrate mounting table;
Supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer. In the step of supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer,
The processing gas is supplied so that a supply amount of the processing gas supplied into the first gas buffer is different from a supply amount of the processing gas supplied into the second gas buffer. 12. A method for manufacturing a semiconductor device according to 12. In the step of supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer,
Based on the area ratio of the total opening area of the gas supply holes provided in the first gas supply surface and the total opening area of the gas supply holes provided in the second gas supply surface, 14. The manufacturing method of a semiconductor device according to claim 13, wherein a ratio between a supply amount of the processing gas supplied into one gas buffer and a supply amount of the processing gas supplied into the second gas buffer is set. Method. In the step of supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer,
An area ratio of a sum of opening areas of the gas supply holes provided in the second gas supply surface to a sum of opening areas of the gas supply holes provided in the first gas supply surface; The method of manufacturing a semiconductor device according to claim 14, wherein a ratio of a supply amount of the processing gas supplied to the second gas buffer to a supply amount of the processing gas supplied to the gas buffer is equal. In the step of supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer,
The area ratio of the total opening area of the gas supply holes provided in the second gas supply surface to the total opening area of the gas supply holes provided in the first gas supply surface is greater than the first area. The method of manufacturing a semiconductor device according to claim 14, wherein a ratio of a supply amount of the processing gas supplied to the second gas buffer to a supply amount of the processing gas supplied to the gas buffer is large. In the step of supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer,
The area ratio of the total opening area of the gas supply holes provided in the second gas supply surface to the total opening area of the gas supply holes provided in the first gas supply surface is greater than the first area. The method of manufacturing a semiconductor device according to claim 14, wherein a ratio of a supply amount of the processing gas supplied to the second gas buffer to a supply amount of the processing gas supplied to the gas buffer is small. A substrate mounting table provided in the processing chamber;
A plurality of substrate platforms arranged on the same circumference centered on the center of the substrate platform;
A first gas buffer provided with a first gas supply surface provided with a gas supply hole for introducing a processing gas into the processing chamber at a position facing the substrate mounting table;
A second gas buffer provided with a second gas supply surface provided with a gas supply hole for introducing a processing gas into the processing chamber at a position facing the substrate mounting table,
The second gas supply surface controls a substrate processing apparatus provided between the first gas supply surface and the center of the substrate mounting table to cause a computer to execute a predetermined procedure for processing a substrate. A computer-readable recording medium recording a program,
The predetermined procedure is:
A procedure for placing the substrate on the substrate placing portion;
A procedure for starting rotation of the substrate mounting table around the center of the substrate mounting table;
Supplying the processing gas into the first gas buffer and supplying the processing gas into the second gas buffer.

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