JPWO2015045932A1 - Copper thin film forming composition - Google Patents
Copper thin film forming composition Download PDFInfo
- Publication number
- JPWO2015045932A1 JPWO2015045932A1 JP2015539118A JP2015539118A JPWO2015045932A1 JP WO2015045932 A1 JPWO2015045932 A1 JP WO2015045932A1 JP 2015539118 A JP2015539118 A JP 2015539118A JP 2015539118 A JP2015539118 A JP 2015539118A JP WO2015045932 A1 JPWO2015045932 A1 JP WO2015045932A1
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- weight
- copper
- copper thin
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000010949 copper Substances 0.000 title claims abstract description 130
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 127
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 127
- 239000010409 thin film Substances 0.000 title claims abstract description 114
- 239000000203 mixture Substances 0.000 title claims abstract description 108
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 96
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical compound [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 claims abstract description 42
- 239000004094 surface-active agent Substances 0.000 claims abstract description 38
- -1 diamine compound Chemical class 0.000 claims abstract description 32
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 15
- 239000003960 organic solvent Substances 0.000 claims abstract description 12
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 7
- 125000005907 alkyl ester group Chemical group 0.000 claims abstract description 5
- 125000005011 alkyl ether group Chemical group 0.000 claims abstract description 5
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract description 5
- 125000000547 substituted alkyl group Chemical group 0.000 claims abstract description 5
- 239000000976 ink Substances 0.000 description 66
- 238000011156 evaluation Methods 0.000 description 35
- 150000004985 diamines Chemical class 0.000 description 32
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 24
- 239000007788 liquid Substances 0.000 description 23
- 150000004699 copper complex Chemical class 0.000 description 22
- BDRCJVQQSVMSMY-UHFFFAOYSA-L dicopper diformate Chemical compound C(=O)[O-].[Cu+2].C(=O)[O-].[Cu+2] BDRCJVQQSVMSMY-UHFFFAOYSA-L 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000010419 fine particle Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 238000002156 mixing Methods 0.000 description 7
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 5
- 230000000007 visual effect Effects 0.000 description 5
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- 239000003245 coal Substances 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 239000002736 nonionic surfactant Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- HBNHCGDYYBMKJN-UHFFFAOYSA-N 2-(4-methylcyclohexyl)propan-2-yl acetate Chemical compound CC1CCC(C(C)(C)OC(C)=O)CC1 HBNHCGDYYBMKJN-UHFFFAOYSA-N 0.000 description 2
- YOOSAIJKYCBPFW-UHFFFAOYSA-N 3-[4-(3-aminopropoxy)butoxy]propan-1-amine Chemical compound NCCCOCCCCOCCCN YOOSAIJKYCBPFW-UHFFFAOYSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- IWBOPFCKHIJFMS-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl) ether Chemical compound NCCOCCOCCN IWBOPFCKHIJFMS-UHFFFAOYSA-N 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- DFPGBRPWDZFIPP-UHFFFAOYSA-N n'-butylethane-1,2-diamine Chemical compound CCCCNCCN DFPGBRPWDZFIPP-UHFFFAOYSA-N 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 1
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 description 1
- 125000006528 (C2-C6) alkyl group Chemical group 0.000 description 1
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 1
- RZRNAYUHWVFMIP-KTKRTIGZSA-N 1-oleoylglycerol Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(O)CO RZRNAYUHWVFMIP-KTKRTIGZSA-N 0.000 description 1
- LXOFYPKXCSULTL-UHFFFAOYSA-N 2,4,7,9-tetramethyldec-5-yne-4,7-diol Chemical compound CC(C)CC(C)(O)C#CC(C)(O)CC(C)C LXOFYPKXCSULTL-UHFFFAOYSA-N 0.000 description 1
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 1
- GFIWSSUBVYLTRF-UHFFFAOYSA-N 2-[2-(2-hydroxyethylamino)ethylamino]ethanol Chemical compound OCCNCCNCCO GFIWSSUBVYLTRF-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- XZIIFPSPUDAGJM-UHFFFAOYSA-N 6-chloro-2-n,2-n-diethylpyrimidine-2,4-diamine Chemical compound CCN(CC)C1=NC(N)=CC(Cl)=N1 XZIIFPSPUDAGJM-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- CJKRXEBLWJVYJD-UHFFFAOYSA-N N,N'-diethylethylenediamine Chemical compound CCNCCNCC CJKRXEBLWJVYJD-UHFFFAOYSA-N 0.000 description 1
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- HVUMOYIDDBPOLL-XWVZOOPGSA-N Sorbitan monostearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O HVUMOYIDDBPOLL-XWVZOOPGSA-N 0.000 description 1
- 239000004147 Sorbitan trioleate Substances 0.000 description 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 125000005233 alkylalcohol group Chemical group 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- VBICKXHEKHSIBG-UHFFFAOYSA-N beta-monoglyceryl stearate Natural products CCCCCCCCCCCCCCCCCC(=O)OCC(O)CO VBICKXHEKHSIBG-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- RZRNAYUHWVFMIP-UHFFFAOYSA-N monoelaidin Natural products CCCCCCCCC=CCCCCCCCC(=O)OCC(O)CO RZRNAYUHWVFMIP-UHFFFAOYSA-N 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002114 octoxynol-9 Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical compound CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 229940035044 sorbitan monolaurate Drugs 0.000 description 1
- 239000001587 sorbitan monostearate Substances 0.000 description 1
- 235000011076 sorbitan monostearate Nutrition 0.000 description 1
- 229940035048 sorbitan monostearate Drugs 0.000 description 1
- 235000019337 sorbitan trioleate Nutrition 0.000 description 1
- 229960000391 sorbitan trioleate Drugs 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 150000004685 tetrahydrates Chemical class 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Chemically Coating (AREA)
Abstract
(A)ギ酸銅、(B)下記一般式(1)で表されるジアミン化合物、(C)アルキル基を有し、炭素数4〜22である界面活性剤、及び(D)30重量%以上のエチレングリコールを含有する有機溶媒を含有する銅薄膜形成組成物。【化1】[式中、R1〜R4は独立して、水素原子、置換されていてもよい炭素数2〜40のアルキル基、アルキルエーテル基、アルキルエステル基又はOH基を示すが、前記OH基の数は0、1、2又は4であり、Xは単結合を示すか、あるいは、−CO−、−O−、−NH−、−NHCO−、もしくは、−(CH2)n1−O−(CH2)n2−O−(CH2)n3−(ここで、n1,n2,n3は独立して0〜4の数を示す)から選ばれる2価の基、又は、炭素数1〜20の2価の炭化水素基を示す。](A) Copper formate, (B) A diamine compound represented by the following general formula (1), (C) a surfactant having an alkyl group and having 4 to 22 carbon atoms, and (D) 30% by weight or more. A copper thin film forming composition containing an organic solvent containing ethylene glycol. [Wherein, R1 to R4 independently represent a hydrogen atom, an optionally substituted alkyl group having 2 to 40 carbon atoms, an alkyl ether group, an alkyl ester group or an OH group. The number of groups is 0, 1, 2 or 4, and X represents a single bond, or —CO—, —O—, —NH—, —NHCO—, or — (CH 2) n 1 —O—. A divalent group selected from (CH2) n2-O- (CH2) n3- (wherein n1, n2, and n3 independently represent a number of 0 to 4), or 2 having 1 to 20 carbon atoms Valent hydrocarbon group. ]
Description
本発明は、銅薄膜形成組成物に関し、より詳しくは、例えばインクジェット法によって塗布されるインクとして好適に利用できる銅薄膜形成組成物に関する。 The present invention relates to a copper thin film forming composition, and more particularly to a copper thin film forming composition that can be suitably used as an ink applied by, for example, an inkjet method.
近年、電子機器の小型化や薄型化に伴い、金属材料の微細配置技術や薄膜形成技術が検討されている。例えば、微細且つ緻密な電子機器の製造において、平均粒子径が100nm以下である金属ナノ微粒子を溶媒中に分散させた金属ナノインクを調製し、インクジェット印刷法やスクリーン印刷法で微細なパターン形状に塗布形成するプリンテッドエレクトロニクス製造技術の開発が進んでいる。 In recent years, with the miniaturization and thinning of electronic devices, metal material micro-arrangement technology and thin film formation technology have been studied. For example, in the manufacture of fine and dense electronic devices, a metal nano ink in which metal nano particles with an average particle size of 100 nm or less are dispersed in a solvent is prepared and applied to a fine pattern shape by an ink jet printing method or a screen printing method. Development of the printed electronics manufacturing technology to be formed is advancing.
金属微粒子は、バルク金属とは異なり、粒子サイズが小さいためファインパターンへの対応に最適であるだけでなく、粒子サイズが小さくなると融点が下がるなどの特性を示すことから、バルク金属の融点温度未満の低温での処理も期待され、様々な工業材料への利用が有望視されている。 Unlike the bulk metal, the metal fine particles are not only optimal for dealing with fine patterns because of their small particle size, but also exhibit characteristics such as a lower melting point when the particle size is smaller. Is expected to be used in various industrial materials.
金属ナノインクに使用される金属としては、銀微粒子での検討が多くなされているが、銀は高価であり、コスト面で問題があるため、例えば、特許文献1では、銅微粒子を用いた金属ナノ粒子インクが提案されている。 As a metal used in the metal nano ink, many studies have been made on silver fine particles. However, since silver is expensive and has a problem in terms of cost, for example, in Patent Document 1, metal nano particles using copper fine particles are used. Particle inks have been proposed.
また、特許文献2では、金属銅膜の形成に際し、金属銅膜を形成したい部位に、遷移金属等を含む銅系粒子堆積層を形成し、ギ酸ガスの存在下で加熱して銅系粒子堆積部のみに選択的に金属銅膜を形成することが提案されている。 Moreover, in patent document 2, when forming a metal copper film, a copper-based particle deposition layer containing a transition metal or the like is formed at a site where the metal copper film is to be formed, and heated in the presence of formic acid gas to deposit copper-based particles. It has been proposed to form a metal copper film selectively only on the portion.
特許文献2では、インクジェット印刷法に適用する銅微粒子インキの場合、金属微粒子の平均分散粒子径が500nmを超えるとインクジェットヘッドノズルの目詰まり等が発生するため、安定して印刷するためには平均分散粒子径300nm以下が望ましいとされている。しかしながら、実際は微粒子化が進むことで表面エネルギーが増加して金属微粒子が凝集し易くなる、という技術課題があり、微粒子化するほどインクジェットノズル内での凝集粒子の目詰まりによる吐出エラーを引き起こすことが懸念される。工業的な実用性を考えた場合は、インクジェットヘッドからの吐出安定性が担保される領域は、平均分散粒子径が150nmを下回る程度までの安定分散が求められている。 In Patent Document 2, in the case of copper fine particle ink applied to the ink jet printing method, if the average dispersed particle size of the metal fine particles exceeds 500 nm, clogging of the ink jet head nozzle or the like occurs. A dispersed particle size of 300 nm or less is desirable. However, in reality, there is a technical problem that the surface energy increases and the metal fine particles easily aggregate due to the progress of micronization, and as the microparticles become finer, an ejection error due to clogging of the aggregated particles in the inkjet nozzle may occur. Concerned. In consideration of industrial practicality, the region where the ejection stability from the ink jet head is ensured requires stable dispersion up to an average dispersed particle size of less than 150 nm.
また、金属微粒子含有インキの吐出安定性の課題を解決するために、金属微粒子を含まないギ酸銅による錯体溶液での銅膜形成組成物も提案されている(特許文献3、特許文献4)。しかしながら、ギ酸銅による錯体溶液の安定性や、低温での還元特性については、十分な検討が尽くされているとは言えず、改良の余地が残されていた。 Moreover, in order to solve the problem of ejection stability of metal fine particle-containing ink, a copper film forming composition in a complex solution of copper formate not containing metal fine particles has also been proposed (Patent Documents 3 and 4). However, the stability of the complex solution with copper formate and the reduction characteristics at low temperatures cannot be said to have been sufficiently studied, and there remains room for improvement.
本発明の目的は、安定性に優れ、比較的低温での熱処理によって導通性が良好な銅薄膜を形成できる銅薄膜形成組成物を提供することである。 The objective of this invention is providing the copper thin film formation composition which can form the copper thin film which is excellent in stability and has favorable electroconductivity by the heat processing at comparatively low temperature.
本発明の銅薄膜形成組成物は、下記成分(A)〜(D);(A)ギ酸銅、(B)下記一般式(1)で表されるジアミン化合物、(C)アルキル基を有し、炭素数4〜22である界面活性剤、及び(D)30重量%以上のエチレングリコールを含有する有機溶媒を含有する。 The copper thin film forming composition of the present invention has the following components (A) to (D); (A) copper formate, (B) a diamine compound represented by the following general formula (1), and (C) an alkyl group. , A surfactant having 4 to 22 carbon atoms, and (D) an organic solvent containing 30% by weight or more of ethylene glycol.
本発明の銅薄膜形成組成物は、前記(A)成分を5重量%以上75重量%以下の範囲内で含有するものであってもよい。 The copper thin film forming composition of the present invention may contain the component (A) within a range of 5 wt% to 75 wt%.
本発明の銅薄膜形成組成物は、前記(A)成分1モルに対し、前記(B)成分を0.05モル以上3モル以下の範囲内で含有するものであってもよい。 The copper thin film forming composition of the present invention may contain the component (B) within a range of 0.05 mol or more and 3 mol or less with respect to 1 mol of the component (A).
本発明の銅薄膜形成組成物は、前記(C)成分を1重量%以上10重量%以下の範囲内で含有するものであってもよい。 The copper thin film forming composition of the present invention may contain the component (C) in the range of 1 wt% to 10 wt%.
本発明の銅薄膜形成組成物は、前記(D)成分を、30重量%以上70重量%以下の範囲内で含有するものであってもよい。 The copper thin film forming composition of the present invention may contain the component (D) within a range of 30% by weight to 70% by weight.
本発明の銅薄膜形成組成物は、インキ化が容易で、安定性に優れ、比較的低温での熱処理によって導通性が良好な銅薄膜を形成できる。従って、本発明の銅薄膜形成組成物は、例えばインクジェット用導電性インクなどの用途に適している。 The composition for forming a copper thin film of the present invention can be easily formed into an ink, has excellent stability, and can form a copper thin film with good conductivity by heat treatment at a relatively low temperature. Therefore, the copper thin film forming composition of the present invention is suitable for applications such as ink jet conductive ink.
本実施の形態に係る銅薄膜形成組成物は、下記成分(A)〜(D);
(A)ギ酸銅、
(B)下記一般式(1)で表されるジアミン化合物、
(C)アルキル基を有し、炭素数4〜22である界面活性剤、
及び
(D)30重量%以上のエチレングリコールを含有する有機溶媒
を含有する。The copper thin film forming composition according to the present embodiment includes the following components (A) to (D);
(A) copper formate,
(B) a diamine compound represented by the following general formula (1),
(C) a surfactant having an alkyl group and having 4 to 22 carbon atoms,
And (D) an organic solvent containing 30% by weight or more of ethylene glycol.
(A)成分:
(A)成分は、ギ酸銅である。ここで定義するギ酸銅とは、Cu(HCOO)2のみならず、その水和物[Cu(HCOO)2・4H2O]や、当該水和物における配位水を置換可能とする有機モノアミンが配位したギ酸銅錯体を意味する。本発明の銅薄膜形成組成物中のギ酸銅(又はその水和物)の含有量は、銅薄膜の導通性を良好にする観点から、例えば5重量%以上75重量%以下の範囲内が好ましく、10重量%以上65重量%以下の範囲内がより好ましい。ギ酸銅(又はその水和物)の含有量が5重量%を下回ると、銅薄膜の導通性が十分に得られない可能性があり、75重量%を超えると凝集や沈殿物が生成して均一なインキ化が困難となる場合がある。(A) component:
(A) A component is copper formate. The copper formate defined here is not only Cu (HCOO) 2 but also its hydrate [Cu (HCOO) 2 .4H 2 O] and an organic monoamine capable of substituting coordinated water in the hydrate. Means a copper formate complex coordinated with The content of copper formate (or a hydrate thereof) in the copper thin film forming composition of the present invention is preferably in the range of, for example, 5% by weight to 75% by weight from the viewpoint of improving the conductivity of the copper thin film. A range of 10 wt% to 65 wt% is more preferable. If the content of copper formate (or its hydrate) is less than 5% by weight, the conductivity of the copper thin film may not be sufficiently obtained, and if it exceeds 75% by weight, agglomeration and precipitates are generated. It may be difficult to make a uniform ink.
(B)成分:
(B)成分の一般式(1)で表されるジアミン化合物(以下、「ジアミン化合物」と記すことがある)は、ギ酸銅との錯体を形成するとともに、形成されたアミン錯体の熱分解に伴って生成するギ酸による還元の温度を下げる効果がある。(B) component:
The diamine compound represented by the general formula (1) of the component (B) (hereinafter sometimes referred to as “diamine compound”) forms a complex with copper formate, and also for thermal decomposition of the formed amine complex. This has the effect of reducing the reduction temperature due to the formic acid produced.
一般式(1)中、R1〜R4は、水素原子、置換されていてもよい炭素数2〜40のアルキル基、アルキルエーテル基、アルキルエステル基又はOH基を示すが、好ましくは、例えば水素原子、炭素数1〜8のアルキル基、炭素数が2〜6のアルキルエーテル基又はOH基を挙げることができ、より好ましくは、例えば水素原子、炭素数1〜6のアルキル基又はR2〜R4のうち1つがOH基で置換されているものを挙げることができる。In the general formula (1), R 1 to R 4 represent a hydrogen atom, an optionally substituted alkyl group having 2 to 40 carbon atoms, an alkyl ether group, an alkyl ester group, or an OH group. A hydrogen atom, a C1-C8 alkyl group, a C2-C6 alkyl ether group, or OH group can be mentioned, More preferably, for example, a hydrogen atom, a C1-C6 alkyl group, or R < 2 >. one of to R 4 there may be mentioned those which are substituted by OH groups.
一般式(1)中、Xは、単結合を示すか、あるいは、−CO−、−O−、−NH−、−NHCO−、もしくは、−(CH2)n1−O−(CH2)n2−O−(CH2)n3−(ここで、n1,n2,n3は独立して0〜4の数を示す)から選ばれる2価の基、又は、炭素数1〜20の2価の炭化水素基を示すが、好ましいXとしては、例えば、上記n1,n2,n3が独立して1〜4の数を示すものを挙げることができ、より具体的には、上記n1,n3がそれぞれ1又は2であり、n2が2ないし4であるものを挙げることができる。In General Formula (1), X represents a single bond, or —CO—, —O—, —NH—, —NHCO—, or — (CH 2 ) n 1 —O— (CH 2 ). a divalent group selected from n 2 —O— (CH 2 ) n 3 — (where n 1 , n 2 and n 3 independently represent a number of 0 to 4), or a carbon number of 1 to 20 is a divalent hydrocarbon group. Preferred examples of X include those in which n 1 , n 2 , and n 3 independently represent 1 to 4, and more specifically, In the above, n 1 and n 3 are each 1 or 2, and n 2 is 2 to 4.
一般式(1)で表されるジアミン化合物の好ましい例としては、1,2‐ビス(2‐アミノエトキシ)エタン、1,4-ブタンジオールビス(3‐アミノプロピル)エーテル、エチレンジアミン、プロピレンジアミン、ブチルエチレンジアミン、ジエチルエチレンジアミン、テトラメチルエチレンジアミン、2−(2−アミノエチルアミノ)エタノール、ビス(2−ヒドロキシエチル)エチレンジアミン、テトラキス(2−ヒドロキシエチル)エチレンジアミン、テトラキス(2−ヒドロキシプロピル)エチレンジアミン、またこれらのアルキル異性体等を挙げることができる。 Preferred examples of the diamine compound represented by the general formula (1) include 1,2-bis (2-aminoethoxy) ethane, 1,4-butanediol bis (3-aminopropyl) ether, ethylenediamine, propylenediamine, Butylethylenediamine, diethylethylenediamine, tetramethylethylenediamine, 2- (2-aminoethylamino) ethanol, bis (2-hydroxyethyl) ethylenediamine, tetrakis (2-hydroxyethyl) ethylenediamine, tetrakis (2-hydroxypropyl) ethylenediamine, and these And alkyl isomers.
本発明の銅薄膜形成組成物中のジアミン化合物の含有量は、ジアミン化合物によって銅薄膜の導通性を良好にする観点から、ギ酸銅1モルに対して、例えば0.05モル以上3モル以下の範囲内が好ましく、0.1モル以上2モル以下の範囲内がより好ましい。ジアミン化合物の含有量が0.05モルを下回ると、銅薄膜の導通性が十分に得られない可能性があり、3モルを超えると、銅薄膜に残存して導通性を低下させる可能性があるため好ましくはない。 The content of the diamine compound in the copper thin film forming composition of the present invention is, for example, 0.05 mol or more and 3 mol or less with respect to 1 mol of copper formate, from the viewpoint of improving the conductivity of the copper thin film by the diamine compound. Within the range, the range of 0.1 mol or more and 2 mol or less is more preferable. If the content of the diamine compound is less than 0.05 mol, the conductivity of the copper thin film may not be sufficiently obtained. If the content of the diamine compound exceeds 3 mol, it may remain in the copper thin film and reduce the conductivity. This is not preferable.
なお、本実施の形態に係る銅薄膜形成組成物には、一般式(1)で表されるジアミン化合物以外のアミン化合物を含有してもよい。一般式(1)で表されるジアミン化合物と組み合わせて使用可能な他のアミン化合物としては、例えばジメチルエタノールアミン、メチルエタノールアミン、ジエチルエタノールアミン、メチルジエタノールアミン、β―アミノエチルイソプロパノールアミン、ジエチルイソプロパノールアミンなどを挙げることができる。 In addition, you may contain amine compounds other than the diamine compound represented by General formula (1) in the copper thin film formation composition which concerns on this Embodiment. Examples of other amine compounds that can be used in combination with the diamine compound represented by the general formula (1) include dimethylethanolamine, methylethanolamine, diethylethanolamine, methyldiethanolamine, β-aminoethylisopropanolamine, and diethylisopropanolamine. And so on.
(C)成分:
(C)成分である、アルキル基を有し、炭素数4〜22である界面活性剤は、ギ酸銅とアミンとの錯体を分散させる作用を有している。このような分散作用によって、還元時には、金属銅の微小な核を均一に拡散した状態で生成させることができる。(C)成分の界面活性剤の好ましい例としては、ポリオキシエチレンアルキルアルコール、アセチレングリコール化合物などのノニオン系界面活性剤を挙げることができる。(C)成分の界面活性剤は、低分子量であり、熱処理によって分解・除去され、銅薄膜中に残存しにくい。(C) component:
Component (C), a surfactant having an alkyl group and having 4 to 22 carbon atoms, has an action of dispersing a complex of copper formate and an amine. By such a dispersing action, fine nuclei of metallic copper can be generated in a uniformly diffused state during reduction. Preferable examples of the component (C) surfactant include nonionic surfactants such as polyoxyethylene alkyl alcohol and acetylene glycol compounds. The component (C) surfactant has a low molecular weight, is decomposed and removed by heat treatment, and hardly remains in the copper thin film.
上記ノニオン系界面活性剤の中でも、特に、アセチレングリコール化合物が好ましい。アセチレングリコール化合物は、ギ酸銅とアミンとの錯体を分散させる強い分散作用を有している。このような分散作用によって、還元時には、金属銅の微小な核を均一に拡散した状態で生成させることができる。また、アセチレングリコール化合物は、低沸点化合物であるため、熱処理によって分解・除去され、銅薄膜中に残存しにくい。このように、アセチレングリコール化合物は、還元処理までは強い分散作用を奏し、熱処理時には容易に分解して除去される。 Among the nonionic surfactants, acetylene glycol compounds are particularly preferable. The acetylene glycol compound has a strong dispersing action for dispersing a complex of copper formate and an amine. By such a dispersing action, fine nuclei of metallic copper can be generated in a uniformly diffused state during reduction. In addition, since the acetylene glycol compound is a low boiling point compound, it is decomposed and removed by heat treatment and hardly remains in the copper thin film. Thus, the acetylene glycol compound exhibits a strong dispersing action until the reduction treatment, and is easily decomposed and removed during the heat treatment.
(C)成分としては、市販品を利用することも可能であり、例えば、ニューコール1008(商品名;日本乳化剤社製)、ニューコール2308(商品名;日本乳化剤社製)、サーフィノール(登録商標)104A(エアープロダクツジャパン社製)などを挙げることができる。 As the component (C), commercially available products may be used. For example, New Coal 1008 (trade name; manufactured by Nippon Emulsifier Co., Ltd.), New Coal 2308 (trade name; manufactured by Nihon Emulsifier Co., Ltd.), Surfynol (registered) (Trademark) 104A (made by Air Products Japan) etc. can be mentioned.
本発明の銅薄膜形成組成物中の(C)成分の界面活性剤の含有量は、ギ酸銅とジアミン化合物との錯体を分散させ、金属銅の微細で均一な核を生成させることによって、最終的に得られる銅薄膜を緻密にし、その導通性を良好にする観点から、例えば1重量%以上10重量%以下の範囲内が好ましく、1重量%以上5重量%以下の範囲内がより好ましい。(C)成分の界面活性剤の含有量が1重量%を下回ると、分散効果が不十分となって銅薄膜の導通性が十分に得られない可能性があり、10重量%を超えても効果の向上が期待できない。 The content of the surfactant of component (C) in the copper thin film forming composition of the present invention is such that the complex of copper formate and a diamine compound is dispersed to form fine and uniform nuclei of metallic copper. From the viewpoint of densifying the obtained copper thin film and improving its electrical conductivity, for example, it is preferably in the range of 1% by weight to 10% by weight, and more preferably in the range of 1% by weight to 5% by weight. When the content of the component (C) surfactant is less than 1% by weight, there is a possibility that the dispersion effect is insufficient and the conductivity of the copper thin film may not be sufficiently obtained. We cannot expect improvement of effect.
なお、本実施の形態に係る銅薄膜形成組成物には、(C)成分である、アルキル基を有し、炭素数4〜22である界面活性剤以外の界面活性剤を含有してもよい。(C)成分の界面活性剤と組み合わせて使用可能な他の界面活性剤としては、例えばポリオキシエチレンラウリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンオクチルフェニルエーテル、ポリオキシエチレンノニエルフェニルエーテル、ソルビタンモノラウレート、ソルビタンモノステアレート、ソルビタントリオレエート、ポリオキシエチレンソルビタンモノラウレート、ポリオキシエチレンモノラウレート、ポリオキシエチレンモノステアレート、オレイン酸モノグリセライド、ステアリン酸モノグリセライド、ポリオキシエチレン−ポリオキシプロピレンブロックコポリマーなどを挙げることができる。 The copper thin film forming composition according to the present embodiment may contain a surfactant other than the surfactant having an alkyl group and having 4 to 22 carbon atoms, which is component (C). . Examples of other surfactants that can be used in combination with the surfactant of component (C) include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene noniel phenyl ether, Sorbitan monolaurate, sorbitan monostearate, sorbitan trioleate, polyoxyethylene sorbitan monolaurate, polyoxyethylene monolaurate, polyoxyethylene monostearate, oleic acid monoglyceride, stearic acid monoglyceride, polyoxyethylene-polyoxy A propylene block copolymer etc. can be mentioned.
(D)成分:
(D)成分の有機溶媒は、(D)成分の全体に対し、エチレングリコールを30重量%以上含有する。エチレングリコールは、水と混和しやすく、ギ酸銅の溶解性に優れており、かつ、低沸点(沸点197.3℃)であるため、熱処理によって容易に分解して銅薄膜中に残存せず、銅薄膜の導通性を良好にすることができる。しかし、(D)成分の有機溶媒中のエチレングリコールの量が30重量%未満では、有機溶媒の分解物が銅薄膜中に残存して電気抵抗を上昇させるため、銅薄膜の導通性が得られなくなる。このような観点から、(D)成分の有機溶媒中のエチレングリコールの含有量は40重量%以上が好ましく、50重量%以上がより好ましく、60重量%以上が望ましい。(D) component:
(D) The organic solvent of a component contains 30 weight% or more of ethylene glycol with respect to the whole (D) component. Ethylene glycol is easily miscible with water, has excellent solubility of copper formate, and has a low boiling point (boiling point: 197.3 ° C.). Therefore, it is easily decomposed by heat treatment and does not remain in the copper thin film. The conductivity of the copper thin film can be improved. However, if the amount of ethylene glycol in the organic solvent of component (D) is less than 30% by weight, the decomposition product of the organic solvent remains in the copper thin film and increases the electrical resistance, so that the conductivity of the copper thin film is obtained. Disappear. From such a viewpoint, the content of ethylene glycol in the organic solvent of component (D) is preferably 40% by weight or more, more preferably 50% by weight or more, and preferably 60% by weight or more.
(D)成分の有機溶媒としては、エチレングリコールとともに、エチレングリコール以外の溶媒も使用することができる。エチレングリコール以外の溶媒としては、例えば、プロピレングリコール、ジエチレングリコール、プロパンジール、ブタンジオール、プロパントリオール、ポリエリレングリコール、ポリプロピレングリコールなどの多価アルコール、メタノール、エタノール、プロパノール、イソプロパノール、ブタノール、ヘキサノール、ターピネオール等のアルコール系溶媒、ジヒドロターピニルアセテート、メチルアセテート、エチルアセテート、プロピルアセテート、メチルメタクリレートなどのエステル系溶媒、アセトン、MEK、MIBKなどのケトン系溶媒を挙げることができる。 (D) As an organic solvent of a component, solvents other than ethylene glycol can also be used with ethylene glycol. Examples of the solvent other than ethylene glycol include polyhydric alcohols such as propylene glycol, diethylene glycol, propane diol, butane diol, propane triol, polyerylene glycol, and polypropylene glycol, methanol, ethanol, propanol, isopropanol, butanol, hexanol, and terpineol. And alcohol solvents such as dihydroterpinyl acetate, methyl acetate, ethyl acetate, propyl acetate, and methyl methacrylate, and ketone solvents such as acetone, MEK, and MIBK.
本発明の銅薄膜形成組成物中の(D)成分の有機溶媒の含有量は、ギ酸銅を溶解してインクとして必要な液状態を維持するため、例えば30重量%以上70重量%以下の範囲内が好ましく、55重量%以上65重量%以下の範囲内がより好ましい。(D)成分の有機溶媒の含有量が30重量%未満であると、還元が不安定となり、銅の金属化が不十分になる傾向となり、70重量%を超えると、導電性が低下する傾向となる。 The content of the organic solvent of the component (D) in the copper thin film forming composition of the present invention is, for example, in the range of 30 wt% or more and 70 wt% or less in order to dissolve the copper formate and maintain the necessary liquid state as the ink. The inside is preferable, and the inside of the range of 55 wt% or more and 65 wt% or less is more preferable. When the content of the organic solvent of the component (D) is less than 30% by weight, the reduction becomes unstable and the metallization of copper tends to be insufficient, and when it exceeds 70% by weight, the conductivity tends to decrease. It becomes.
本発明の銅薄膜形成組成物には、必須成分以外に、任意の成分として、例えば、安定剤、増粘剤、ゲル化防止剤、消泡剤、レベリング剤、希釈剤、寸法安定化剤等を含有してもよい。 In addition to the essential components, the copper thin film forming composition of the present invention includes, as an optional component, for example, a stabilizer, a thickener, an antigelling agent, an antifoaming agent, a leveling agent, a diluent, a dimension stabilizing agent, and the like. It may contain.
本発明の銅薄膜形成組成物は、所定量の上記必須成分及び必要に応じて任意成分を混合することによって調製できる。 The composition for forming a copper thin film of the present invention can be prepared by mixing a predetermined amount of the above essential components and optional components as necessary.
本発明の銅薄膜形成組成物の適用は、導電性インクとして、例えばインクジェット法、スクリーン印刷法などの塗布法により基材上に塗布し、塗布膜を形成することによって行われる。その後、塗布膜を、例えば200〜300℃の範囲内の温度で熱処理することによって、導通性に優れた銅薄膜、銅配線層、銅電極層などの導電層を形成できる。 Application of the copper thin film forming composition of the present invention is performed by applying a conductive film as a conductive ink on a substrate by a coating method such as an inkjet method or a screen printing method to form a coating film. Then, conductive layers, such as a copper thin film excellent in electroconductivity, a copper wiring layer, and a copper electrode layer, can be formed by heat-processing a coating film at the temperature within the range of 200-300 degreeC, for example.
本発明の銅薄膜形成組成物は、インク化が容易であり、保存安定性に優れ、比較的低温での熱処理によって導通性が良好な銅薄膜を形成できる。従って、本発明の銅薄膜形成組成物は、例えばインクジェット法、スクリーン印刷法などの塗布方法によって適用される導電性インクとして、各種回路基板や電子部品の製造過程で、例えば配線、電極等の導電層の形成目的で好ましく使用できる。 The composition for forming a copper thin film of the present invention can be easily formed into an ink, has excellent storage stability, and can form a copper thin film with good conductivity by heat treatment at a relatively low temperature. Therefore, the copper thin film-forming composition of the present invention is used as a conductive ink applied by a coating method such as an ink jet method or a screen printing method, for example, in the process of manufacturing various circuit boards or electronic components, for example, conductive materials such as wiring and electrodes. It can be preferably used for the purpose of forming a layer.
以下に実施例を示し、本発明の特徴をより具体的に説明する。ただし、本発明は実施例に制約されるものではなく、特にことわりのない限り各種の塗工方法、評価方法により特性を得るものである。 The features of the present invention will be described more specifically with reference to examples. However, the present invention is not limited to the examples, and the characteristics are obtained by various coating methods and evaluation methods unless otherwise specified.
[インキ化評価]
銅薄膜形成組成物のインキ化評価は目視によって判定した。その区分けとして組成物が均一な組成物として得られた場合は、「可」と判定し、組成物が凝集物や不溶解成分等の沈降物を含み、不均一な組成物として得られた場合は、「不可」と判定した。なお、インキ化評価が「不可」の組成物は、塗布および印刷ができないと判断した。[Ink evaluation]
Ink evaluation of the copper thin film forming composition was determined visually. When the composition is obtained as a uniform composition as the classification, it is judged as “Yes”, and the composition contains sediment such as aggregates and insoluble components, and is obtained as a non-uniform composition. Was determined to be “impossible”. In addition, it was judged that the composition whose ink conversion evaluation was “impossible” could not be applied and printed.
[基板への塗布]
加熱処理後の銅薄膜が1.0μm程度となるようにスピンコーターの回転数×時間を400rpm×10秒に固定して銅薄膜形成組成物を塗工した。その後、VCD(アルバック社製)にて揮発性溶媒を塗布膜中から揮発させた。[Apply to substrate]
The copper thin film forming composition was applied by fixing the spin coater rotation number × time to 400 rpm × 10 seconds so that the copper thin film after the heat treatment was about 1.0 μm. Thereafter, a volatile solvent was volatilized from the coating film by VCD (manufactured by ULVAC).
[加熱(銅薄膜形成方法)]
前述の基板をホットプレート(FischerScientific社製)上に乗せ、窒素気流下で常温から150℃に昇温して15分間保持した後、15分間かけて70℃以下に降温したものは一次導通性評価基板とした。また、前記基板に次いで300℃に追加昇温して15分間保持、15分間かけて70℃以下したものは二次導通性評価基板とした。[Heating (Cu thin film forming method)]
The above substrate is placed on a hot plate (Fischer Scientific), heated from room temperature to 150 ° C. under a nitrogen stream, held for 15 minutes, and then cooled to 70 ° C. or lower over 15 minutes. A substrate was used. Further, the substrate was heated to an additional temperature of 300 ° C. after the substrate and held for 15 minutes, and the temperature was lowered to 70 ° C. or less over 15 minutes was used as the secondary conductivity evaluation substrate.
[導通性評価]
前述の基板の導通性評価は、ロレスタGP MCP−T610(三菱化学アナリテック社製)、ASPプローブを用いて四探針法による体積抵抗率で評価した。評価方法はJISK7194に準拠して行った。[Conductivity evaluation]
The above-mentioned conductivity evaluation of the substrate was evaluated by volume resistivity by a four-probe method using a Loresta GP MCP-T610 (manufactured by Mitsubishi Chemical Analytech) and an ASP probe. The evaluation method was performed according to JISK7194.
実施例及び比較例の銅薄膜形成組成物を作製するために使用した原料とその略号は以下のとおりである。
(A)ギ酸銅
ギ酸銅(1):ギ酸銅(II)四水和物(キシダ化学社製)The raw materials and their abbreviations used to produce the copper thin film forming compositions of the examples and comparative examples are as follows.
(A) Copper formate Copper formate (1): Copper formate (II) tetrahydrate (manufactured by Kishida Chemical Co., Ltd.)
(B)ジアミン化合物
ジアミン(1):1,2‐ビス(2‐アミノエトキシ)エタン(東京化成工業社製)
ジアミン(2):1,4-ブタンジオールビス(3‐アミノプロピル)エーテル(東京化成工業社製)
ジアミン(3):ビス(2−ヒドロキシエチル)エチレンジアミン(東京化成工業社製)
ジアミン(4):テトラキス(2−ヒドロキシプロピル)エチレンジアミン(東京化成工業社製)
ジアミン(5):ブチルエチレンジアミン(東京化成工業社製)(B) Diamine Compound Diamine (1): 1,2-bis (2-aminoethoxy) ethane (manufactured by Tokyo Chemical Industry Co., Ltd.)
Diamine (2): 1,4-butanediol bis (3-aminopropyl) ether (manufactured by Tokyo Chemical Industry Co., Ltd.)
Diamine (3): Bis (2-hydroxyethyl) ethylenediamine (manufactured by Tokyo Chemical Industry Co., Ltd.)
Diamine (4): Tetrakis (2-hydroxypropyl) ethylenediamine (manufactured by Tokyo Chemical Industry Co., Ltd.)
Diamine (5): Butylethylenediamine (manufactured by Tokyo Chemical Industry Co., Ltd.)
(C)界面活性剤
界面活性剤(1):ポリオキシエチレン(8)オクチルアルコール(ノニオン性界面活性剤、日本乳化剤社製、商品名;ニューコール1008)
界面活性剤(2):ポリオキシエチレン(8)ラウリルアルコール(ノニオン性界面活性剤、日本乳化剤社製、商品名;ニューコール2308)
界面活性剤(3):アセチレングリコール化合物(エアープロダクツジャパン社製、商品名;サーフィノール104A)
(D)有機溶媒
エチレングリコール:関東化学社製、特級(C) Surfactant Surfactant (1): Polyoxyethylene (8) Octyl alcohol (Nonionic surfactant, manufactured by Nippon Emulsifier Co., Ltd., trade name: New Coal 1008)
Surfactant (2): polyoxyethylene (8) lauryl alcohol (nonionic surfactant, manufactured by Nippon Emulsifier Co., Ltd., trade name: New Coal 2308)
Surfactant (3): Acetylene glycol compound (manufactured by Air Products Japan, trade name: Surfynol 104A)
(D) Organic solvent ethylene glycol: manufactured by Kanto Chemical Co., Ltd.
[実施例1]
59.1重量部のエチレングリコール、22.4重量部のジアミン(1)、及び17.1重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体1を得た。これに、1.4重量部の界面活性剤(1)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物1を得た。得られた銅薄膜形成組成物1は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物1は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表1に示す。[Example 1]
Stir and mix 59.1 parts by weight of ethylene glycol, 22.4 parts by weight of diamine (1), and 17.1 parts by weight of copper formate (1) at 45-50 ° C. for 30 minutes, and then cool to room temperature. A copper complex ink intermediate 1 was obtained. To this, 1.4 parts by weight of the surfactant (1) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition 1. The obtained copper thin film forming composition 1 became a blue transparent liquid having fluidity. Moreover, the copper thin film forming composition 1 was visually uniform, and was determined as “possible” as an ink evaluation. The results are shown in Table 1.
[実施例2]
59.2重量部のエチレングリコール、25.5重量部のジアミン(2)、及び14.1重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体2を得た。これに、1.2重量部の界面活性剤(1)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物2を得た。得られた銅薄膜形成組成物2は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物2は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表1に示す。[Example 2]
Stir and mix 59.2 parts by weight of ethylene glycol, 25.5 parts by weight of diamine (2), and 14.1 parts by weight of copper formate (1) at 45-50 ° C. for 30 minutes, and then cool to room temperature. A copper complex ink intermediate 2 was obtained. To this, 1.2 parts by weight of surfactant (1) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition 2. The obtained copper thin film forming composition 2 became a blue transparent liquid having fluidity. Moreover, the copper thin film forming composition 2 was visually uniform, and was determined as “possible” as the ink evaluation. The results are shown in Table 1.
[実施例3]
59.1重量部のエチレングリコール、22.4重量部のジアミン(1)、及び17.1重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体3を得た。これに、1.4重量部の界面活性剤(2)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物3を得た。得られた銅薄膜形成組成物3は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物3は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表1に示す。[Example 3]
Stir and mix 59.1 parts by weight of ethylene glycol, 22.4 parts by weight of diamine (1), and 17.1 parts by weight of copper formate (1) at 45-50 ° C. for 30 minutes, and then cool to room temperature. A copper complex ink intermediate 3 was obtained. To this, 1.4 parts by weight of surfactant (2) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition 3. The obtained copper thin film forming composition 3 became a blue transparent liquid having fluidity. Moreover, the copper thin film formation composition 3 was uniform visually, and was determined as “possible” as the ink evaluation. The results are shown in Table 1.
[実施例4]
58.7重量部のエチレングリコール、25.2重量部のジアミン(2)、及び13.9重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体4を得た。これに、2.2重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物4を得た。得られた銅薄膜形成組成物4は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物4は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表1に示す。[Example 4]
58.7 parts by weight of ethylene glycol, 25.2 parts by weight of diamine (2), and 13.9 parts by weight of copper formate (1) are stirred and mixed at 45-50 ° C. for 30 minutes and then cooled to room temperature. A copper complex ink intermediate 4 was obtained. To this, 2.2 parts by weight of surfactant (3) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition 4. The obtained copper thin film forming composition 4 became a blue transparent liquid having fluidity. Moreover, the copper thin film formation composition 4 was uniform visually, and it was determined as “possible” as ink evaluation. The results are shown in Table 1.
[実施例5]
58.4重量部のエチレングリコール、22.1重量部のジアミン(1)、及び16.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体5を得た。これに、2.7重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物5を得た。得られた銅薄膜形成組成物5は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物5は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表1に示す。[Example 5]
58.4 parts by weight of ethylene glycol, 22.1 parts by weight of diamine (1), and 16.8 parts by weight of copper formate (1) are stirred and mixed at 45-50 ° C. for 30 minutes and then cooled to room temperature. A copper complex ink intermediate 5 was obtained. To this, 2.7 parts by weight of surfactant (3) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition 5. The obtained copper thin film forming composition 5 became a blue transparent liquid having fluidity. Moreover, the copper thin film formation composition 5 was uniform visually, and was determined as “possible” as the ink evaluation. The results are shown in Table 1.
[実施例6]
35.1重量部のエチレングリコール、23.3重量部のメタノール、22.1重量部のジアミン(1)、及び16.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体6を得た。これに、2.7重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物6を得た。得られた銅薄膜形成組成物6は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物6は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表1に示す。[Example 6]
35.1 parts by weight of ethylene glycol, 23.3 parts by weight of methanol, 22.1 parts by weight of diamine (1), and 16.8 parts by weight of copper formate (1) were stirred and mixed at 45 to 50 ° C. for 30 minutes. Then, the copper complex ink intermediate 6 was obtained by cooling to room temperature. To this, 2.7 parts by weight of surfactant (3) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition 6. The obtained copper thin film forming composition 6 became a blue transparent liquid having fluidity. Moreover, the copper thin film formation composition 6 was uniform visually, and it was determined as “possible” as ink evaluation. The results are shown in Table 1.
[実施例7]
29.2重量部のエチレングリコール、29.2重量部のメタノール、22.1重量部のジアミン(1)、及び16.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体7を得た。これに、2.7重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物7を得た。得られた銅薄膜形成組成物7は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物7は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表1に示す。[Example 7]
29.2 parts by weight of ethylene glycol, 29.2 parts by weight of methanol, 22.1 parts by weight of diamine (1), and 16.8 parts by weight of copper formate (1) were stirred and mixed at 45 to 50 ° C. for 30 minutes. Then, the copper complex ink intermediate 7 was obtained by cooling to room temperature. To this, 2.7 parts by weight of surfactant (3) was added and mixed, followed by filtration with a 1 μm filter to obtain a copper thin film forming composition 7. The obtained copper thin film forming composition 7 became a blue transparent liquid having fluidity. Moreover, the copper thin film forming composition 7 was visually uniform, and was determined as “possible” as the ink evaluation. The results are shown in Table 1.
[実施例8]
23.4重量部のエチレングリコール、35.0重量部のメタノール、22.1重量部のジアミン(1)、及び16.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体8を得た。これに、2.7重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物8を得た。得られた銅薄膜形成組成物8は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物8は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表1に示す。[Example 8]
23.4 parts by weight of ethylene glycol, 35.0 parts by weight of methanol, 22.1 parts by weight of diamine (1), and 16.8 parts by weight of copper formate (1) were stirred and mixed at 45 to 50 ° C. for 30 minutes. Then, the copper complex ink intermediate 8 was obtained by cooling to room temperature. To this, 2.7 parts by weight of surfactant (3) was added and mixed, followed by filtration with a 1 μm filter to obtain a copper thin film forming composition 8. The obtained copper thin film forming composition 8 became a blue transparent liquid having fluidity. Moreover, the copper thin film formation composition 8 was uniform visually, and it was determined as "OK" as an ink evaluation. The results are shown in Table 1.
[実施例9]
35.9重量部のエチレングリコール、34.0重量部のジアミン(1)、及び25.9重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体9を得た。これに、4.2重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物9を得た。得られた銅薄膜形成組成物9は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物9は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表1に示す。[Example 9]
Stir and mix 35.9 parts by weight of ethylene glycol, 34.0 parts by weight of diamine (1), and 25.9 parts by weight of copper formate (1) at 45-50 ° C. for 30 minutes, and then cool to room temperature. A copper complex ink intermediate 9 was obtained. To this, 4.2 parts by weight of surfactant (3) was added and mixed, followed by filtration with a 1 μm filter to obtain a copper thin film forming composition 9. The obtained copper thin film forming composition 9 became a blue transparent liquid having fluidity. Moreover, the copper thin film formation composition 9 was uniform visually, and was determined as “possible” as the ink evaluation. The results are shown in Table 1.
[実施例10]
58.4重量部のエチレングリコール、22.1重量部のジアミン(3)、及び16.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体10を得た。これに、2.7重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物10を得た。得られた銅薄膜形成組成物10は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物10は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表1に示す。[Example 10]
58.4 parts by weight of ethylene glycol, 22.1 parts by weight of diamine (3), and 16.8 parts by weight of copper formate (1) are stirred and mixed at 45-50 ° C. for 30 minutes and then cooled to room temperature. A copper complex ink intermediate 10 was obtained. To this, 2.7 parts by weight of surfactant (3) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition 10. The obtained copper thin film forming composition 10 became a blue transparent liquid having fluidity. Moreover, the copper thin film formation composition 10 was uniform visually, and was determined as "OK" as ink evaluation. The results are shown in Table 1.
[実施例11]
58.8重量部のエチレングリコール、26.5重量部のジアミン(4)、及び12.7重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体11を得た。これに、2.0重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物11を得た。得られた銅薄膜形成組成物11は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物11は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表1に示す。[Example 11]
58.8 parts by weight of ethylene glycol, 26.5 parts by weight of diamine (4), and 12.7 parts by weight of copper formate (1) are stirred and mixed at 45-50 ° C. for 30 minutes and then cooled to room temperature. A copper complex ink intermediate 11 was obtained. To this, 2.0 parts by weight of surfactant (3) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition 11. The obtained copper thin film forming composition 11 became a blue transparent liquid having fluidity. Moreover, the copper thin film forming composition 11 was visually uniform, and was determined as “possible” as an ink evaluation. The results are shown in Table 1.
[実施例12]
58.1重量部のエチレングリコール、19.7重量部のジアミン(5)、及び19.1重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体12を得た。これに、3.1重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物12を得た。得られた銅薄膜形成組成物12は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物12は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表1に示す。[Example 12]
58.1 parts by weight of ethylene glycol, 19.7 parts by weight of diamine (5), and 19.1 parts by weight of copper formate (1) are stirred and mixed at 45-50 ° C. for 30 minutes and then cooled to room temperature. A copper complex ink intermediate 12 was obtained. The copper thin film forming composition 12 was obtained by adding and mixing 3.1 weight part surfactant (3) to this, and filtering with a 1 micrometer filter. The obtained copper thin film forming composition 12 became a blue transparent liquid having fluidity. Moreover, the copper thin film forming composition 12 was visually uniform, and was determined as “possible” as the ink evaluation. The results are shown in Table 1.
比較例1
56.4重量部のエチレングリコール、及び37.6重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体を得た。これに、6.0重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物を得た。得られた銅薄膜形成組成物は青色の液体となったが、均一に溶解しなかったため、目視によるインキ化評価で「不可」と判定した。結果を表2に示す。Comparative Example 1
After stirring and mixing 56.4 parts by weight of ethylene glycol and 37.6 parts by weight of copper formate (1) at 45 to 50 ° C. for 30 minutes, the mixture was cooled to room temperature to obtain a copper complex ink intermediate. To this, 6.0 parts by weight of surfactant (3) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition. Although the obtained copper thin film forming composition became a blue liquid, it did not dissolve uniformly, so it was determined as “impossible” by visual ink evaluation. The results are shown in Table 2.
比較例2
58.1重量部のエチレングリコール、及び38.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体を得た。これに、3.1重量部の界面活性剤(1)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物を得た。得られた銅薄膜形成組成物は青色の液体となったが、均一に溶解しなかったため、目視によるインキ化評価で「不可」と判定した。結果を表2に示す。Comparative Example 2
After stirring and mixing 58.1 parts by weight of ethylene glycol and 38.8 parts by weight of copper formate (1) at 45-50 ° C. for 30 minutes, the mixture was cooled to room temperature to obtain a copper complex ink intermediate. To this, 3.1 parts by weight of surfactant (1) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition. Although the obtained copper thin film forming composition became a blue liquid, it did not dissolve uniformly, so it was determined as “impossible” by visual ink evaluation. The results are shown in Table 2.
比較例3
17.5重量部のエチレングリコール、40.9重量部のメタノール、22.1重量部のジアミン(1)、及び16.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体を得た。これに、2.7重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物を得た。得られた銅薄膜形成組成物は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表2に示す。Comparative Example 3
17.5 parts by weight of ethylene glycol, 40.9 parts by weight of methanol, 22.1 parts by weight of diamine (1), and 16.8 parts by weight of copper formate (1) were stirred and mixed at 45 to 50 ° C. for 30 minutes. Then, the copper complex ink intermediate was obtained by cooling to room temperature. To this, 2.7 parts by weight of surfactant (3) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition. The obtained copper thin film forming composition became a blue transparent liquid having fluidity. Moreover, the copper thin film forming composition was visually uniform, and was determined as “possible” as an ink evaluation. The results are shown in Table 2.
比較例4
11.7重量部のエチレングリコール、46.7重量部のメタノール、22.1重量部のジアミン(1)、及び16.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体を得た。これに、2.7重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物を得た。得られた銅薄膜形成組成物は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表2に示す。Comparative Example 4
11.7 parts by weight of ethylene glycol, 46.7 parts by weight of methanol, 22.1 parts by weight of diamine (1), and 16.8 parts by weight of copper formate (1) were stirred and mixed at 45 to 50 ° C. for 30 minutes. Then, the copper complex ink intermediate was obtained by cooling to room temperature. To this, 2.7 parts by weight of surfactant (3) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition. The obtained copper thin film forming composition became a blue transparent liquid having fluidity. Moreover, the copper thin film forming composition was visually uniform, and was determined as “possible” as an ink evaluation. The results are shown in Table 2.
比較例5
5.9重量部のエチレングリコール、52.5重量部のメタノール、22.1重量部のジアミン(1)、及び16.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体を得た。これに、2.7重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物を得た。得られた銅薄膜形成組成物は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表2に示す。Comparative Example 5
5.9 parts by weight of ethylene glycol, 52.5 parts by weight of methanol, 22.1 parts by weight of diamine (1), and 16.8 parts by weight of copper formate (1) were stirred and mixed at 45 to 50 ° C. for 30 minutes. Then, the copper complex ink intermediate was obtained by cooling to room temperature. To this, 2.7 parts by weight of surfactant (3) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition. The obtained copper thin film forming composition became a blue transparent liquid having fluidity. Moreover, the copper thin film forming composition was visually uniform, and was determined as “possible” as an ink evaluation. The results are shown in Table 2.
比較例6
58.4重量部のメタノール、22.1重量部のジアミン(1)、及び16.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体を得た。これに、2.7重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物を得た。得られた銅薄膜形成組成物は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表2に示す。Comparative Example 6
By stirring and mixing 58.4 parts by weight of methanol, 22.1 parts by weight of diamine (1), and 16.8 parts by weight of copper formate (1) at 45 to 50 ° C. for 30 minutes, the mixture was cooled to room temperature. A copper complex ink intermediate was obtained. To this, 2.7 parts by weight of surfactant (3) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition. The obtained copper thin film forming composition became a blue transparent liquid having fluidity. Moreover, the copper thin film forming composition was visually uniform, and was determined as “possible” as an ink evaluation. The results are shown in Table 2.
比較例7
58.4重量部のジエチレングリコール、22.1重量部のジアミン(1)、及び16.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体を得た。これに、2.7重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物を得た。得られた銅薄膜形成組成物は青色の液体となったが、均一に溶解しなかったため、目視によるインキ化評価で「不可」と判定した。結果を表2に示す。Comparative Example 7
By stirring and mixing 58.4 parts by weight of diethylene glycol, 22.1 parts by weight of diamine (1), and 16.8 parts by weight of copper formate (1) at 45 to 50 ° C. for 30 minutes, and then cooling to room temperature. A copper complex ink intermediate was obtained. To this, 2.7 parts by weight of surfactant (3) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition. Although the obtained copper thin film forming composition became a blue liquid, it did not dissolve uniformly, so it was determined as “impossible” by visual ink evaluation. The results are shown in Table 2.
比較例8
58.4重量部のターピネオール、22.1重量部のジアミン(1)、及び16.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体を得た。これに、2.7重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物を得た。得られた銅薄膜形成組成物は青色の液体となったが、均一に溶解しなかったため、目視によるインキ化評価で「不可」と判定した。結果を表2に示す。Comparative Example 8
By stirring and mixing 58.4 parts by weight of terpineol, 22.1 parts by weight of diamine (1), and 16.8 parts by weight of copper formate (1) at 45 to 50 ° C. for 30 minutes, and then cooling to room temperature. A copper complex ink intermediate was obtained. To this, 2.7 parts by weight of surfactant (3) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition. Although the obtained copper thin film forming composition became a blue liquid, it did not dissolve uniformly, so it was determined as “impossible” by visual ink evaluation. The results are shown in Table 2.
比較例9
58.4重量部のジヒドロターピニルアセテート、22.1重量部のジアミン(1)、及び16.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体を得た。これに、2.7重量部の界面活性剤(3)を添加混合し、1μmフィルターでろ過することで銅薄膜形成組成物を得た。得られた銅薄膜形成組成物は青色の液体となったが、均一に溶解しなかったため、目視によるインキ化評価で「不可」と判定した。結果を表2に示す。Comparative Example 9
58.4 parts by weight of dihydroterpinyl acetate, 22.1 parts by weight of diamine (1), and 16.8 parts by weight of copper formate (1) were stirred and mixed at 45-50 ° C. for 30 minutes, and then brought to room temperature. The copper complex ink intermediate was obtained by cooling. To this, 2.7 parts by weight of surfactant (3) was added and mixed, and filtered through a 1 μm filter to obtain a copper thin film forming composition. Although the obtained copper thin film forming composition became a blue liquid, it did not dissolve uniformly, so it was determined as “impossible” by visual ink evaluation. The results are shown in Table 2.
比較例10
61.1重量部のエチレングリコール、22.1重量部のジアミン(1)、及び16.8重量部のギ酸銅(1)を45〜50℃で30分間攪拌混合した後、室温に冷却することで銅錯体インク中間体を得た。これを1μmフィルターでろ過することで銅薄膜形成組成物を得た。得られた銅薄膜形成組成物は流動性を有する青色透明の液体となった。また、銅薄膜形成組成物は目視にて均一であり、インキ化評価として、「可」と判定した。結果を表2に示す。Comparative Example 10
61.1 parts by weight of ethylene glycol, 22.1 parts by weight of diamine (1), and 16.8 parts by weight of copper formate (1) are stirred and mixed at 45-50 ° C. for 30 minutes and then cooled to room temperature. A copper complex ink intermediate was obtained. This was filtered through a 1 μm filter to obtain a copper thin film forming composition. The obtained copper thin film forming composition became a blue transparent liquid having fluidity. Moreover, the copper thin film forming composition was visually uniform, and was determined as “possible” as an ink evaluation. The results are shown in Table 2.
以上の結果をまとめて、表1及び2に示す。なお、表1及び2中、「塗布条件」は、10秒当たりのスピンコーターの回転数を示し、「一次導通性」は、一次導通性評価基板の導通性評価の結果を示し、「二次導通性」は、二次導通性評価基板の導通性評価の結果を示す。 The above results are summarized in Tables 1 and 2. In Tables 1 and 2, “application condition” indicates the number of rotations of the spin coater per 10 seconds, “primary conductivity” indicates the result of the conductivity evaluation of the primary conductivity evaluation substrate, and “secondary conductivity” “Conductivity” indicates the result of the conductivity evaluation of the secondary conductivity evaluation board.
表1及び表2より、上記成分(A)〜(D)を組み合わせて含有する実施例1〜12の銅薄膜形成組成物では、インキ化が容易であり、かつ銅薄膜の導通性も優れていた。一方、上記成分(A)〜(D)の組み合わせを備えていない比較例1〜10の組成物では、インキ化評価又は導通性のいずれかの特性において実施例に比べ劣っていた。 From Table 1 and Table 2, in the copper thin film forming composition of Examples 1 to 12 containing a combination of the above components (A) to (D), it is easy to make an ink and the conductivity of the copper thin film is excellent. It was. On the other hand, the compositions of Comparative Examples 1 to 10 that did not include the combination of the above components (A) to (D) were inferior to the examples in any of the properties of ink evaluation and conductivity.
以上、本発明の実施の形態を例示の目的で詳細に説明したが、本発明は上記実施の形態に制約されることはない。 As mentioned above, although embodiment of this invention was described in detail for the purpose of illustration, this invention is not restrict | limited to the said embodiment.
本国際出願は、2013年9月30日に出願された日本国特許出願2013−202910号に基づく優先権を主張するものであり、当該出願の全内容をここに援用する。
This international application claims priority based on Japanese Patent Application No. 2013-202910 filed on September 30, 2013, the entire contents of which are incorporated herein by reference.
Claims (5)
(A)ギ酸銅、
(B)下記一般式(1)で表されるジアミン化合物、
(C)アルキル基を有し、炭素数4〜22である界面活性剤、
及び
(D)30重量%以上のエチレングリコールを含有する有機溶媒
を含有する銅薄膜形成組成物。The following components (A) to (D);
(A) copper formate,
(B) a diamine compound represented by the following general formula (1),
(C) a surfactant having an alkyl group and having 4 to 22 carbon atoms,
And (D) a copper thin film forming composition containing an organic solvent containing 30% by weight or more of ethylene glycol.
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JP2013202910 | 2013-09-30 | ||
JP2013202910 | 2013-09-30 | ||
PCT/JP2014/074341 WO2015045932A1 (en) | 2013-09-30 | 2014-09-16 | Copper thin film forming composition |
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JPWO2015045932A1 true JPWO2015045932A1 (en) | 2017-03-09 |
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WO2017134769A1 (en) * | 2016-02-03 | 2017-08-10 | 学校法人工学院大学 | Metal film-forming composition and metal film-forming method |
JP7565533B2 (en) | 2019-08-06 | 2024-10-11 | 国立大学法人長岡技術科学大学 | Method for producing a composite having a metal film formed on a substrate and the composite |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01168866A (en) * | 1987-12-24 | 1989-07-04 | Mitsubishi Gas Chem Co Inc | Production of article coated with copper film |
JP2012126814A (en) * | 2010-12-15 | 2012-07-05 | Tosoh Corp | Conductive ink composition, and method for producing electrically conductive site |
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JP2010242118A (en) * | 2009-04-01 | 2010-10-28 | Adeka Corp | Composition for forming copper thin film, and method for manufacturing copper thin film using the composition |
JP5923351B2 (en) * | 2012-03-16 | 2016-05-24 | 株式会社Adeka | Composition for forming copper film and method for producing copper film using the composition |
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2014
- 2014-09-16 WO PCT/JP2014/074341 patent/WO2015045932A1/en active Application Filing
- 2014-09-16 JP JP2015539118A patent/JPWO2015045932A1/en active Pending
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH01168866A (en) * | 1987-12-24 | 1989-07-04 | Mitsubishi Gas Chem Co Inc | Production of article coated with copper film |
JP2012126814A (en) * | 2010-12-15 | 2012-07-05 | Tosoh Corp | Conductive ink composition, and method for producing electrically conductive site |
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