JPWO2015030238A1 - セラミックス材料、および熱スイッチ - Google Patents
セラミックス材料、および熱スイッチ Download PDFInfo
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Abstract
Description
(式1) LAMFP=(3×熱伝導率)/(熱容量×音速)
で定義したとき、微構造の代表長さLaが0.1LAMFP≦La≦100LAMFPであり、熱伝導率が室温から100℃の間で単調に増加する。
(1)ある材料A(母材)の中に、微構造の代表長さLaの間隔で母材とは異なる材料を分散させた状態で焼結する(図1A:実施形態1)。
(2)ある材料A(母材)の中に、微構造の代表長さLaの間隔で母材とは異なる材料の粒子を析出させる(図1A:実施形態1)。
(3)ある材料A(母材)の中に、微構造の代表長さLaの間隔で気孔を形成する(図1B:実施形態2)。
(4)粒径が微構造の代表長さLaのある材料Aの粒子から構成させる多結晶体(微構造の代表長さLaの間隔で粒界相が存在)(図1C:実施形態3)。
実施形態1〜3について、さらに説明する。
図1Aに、母材(材料A)中に異種材料(材料B)が分散した複合材料によって構成された実施形態1を示す。本実施形態は、材料A中に材料Bの粒子がある長さの間隔で存在している。微構造の代表長さLaは、材料Bの粒子と材料Bの粒子との間隔である。ある粒子B1に対し、その周りにある粒子Biの内、最短の位置にある粒子B2を選択し、B1とB2との距離をGIとする。
図1Bに、多孔体によって構成されたセラミックス材料の実施形態を示す。本実施形態は、材料A中に気孔Cがある長さの間隔で存在している構造を有する。微構造の代表長さLaは、気孔Cの間隔である構造長さである。
図1Cは、多結晶によって構成されたセラミックス材料の実施形態を示す。本実施形態は、多結晶によって構成され、結晶粒子の粒径dが微構造の代表長さLaである。したがって、0.1LAMFP≦d≦100LAMFPであることが好ましい。粒径dに分布があったとしても(間隔が一定でない場合でも)、dが上記の範囲内であることが好ましく、全体の80%以上のdがこの範囲内にあることが好ましい。結晶粒子の粒径dがこのような範囲内となるようにセラミックス材料を形成することにより、温度によって熱伝導率が大きく変化するセラミックス材料を得ることができる。
上記のようなセラミックス材料は、温度によって熱伝導率が大きく変化するため熱スイッチとして用いることができる。例えば、図2に示すように、セラミックス材料は室温以上のある温度を境に急激に熱伝導率が増加する。熱スイッチとは、熱伝導率が低い状態(断熱状態)と高い状態(伝熱状態)とを切り替えられる材料である。温度が上昇した場合に熱伝導率が高くなる熱スイッチは、ある温度(第1温度)以下では、熱伝導率が低いため、熱スイッチはOFFの状態と言える。一方、第1温度より高い第2温度以上では、熱伝導率が高くなり、熱スイッチはONの状態と言える。
気孔の間隔のばらつきが少ない成形体とし、焼結した際にも気孔の間隔のばらつきを少なくするため、平均粒径100nmの炭化ケイ素粉末を、分散剤の入ったエタノールを用いて分散させた。この炭化ケイ素粉末をプレス成形して、直径30mm、厚さ6mmの円盤状の成形体を準備した。この成形体をAr雰囲気中で2050℃で焼成し、多孔質な炭化ケイ素焼結体を得た。
平均粒径20nmの炭化ケイ素粉末をプレス成形して、直径30mm、厚さ6mmの円盤状の成形体を準備した。この成形体を放電プラズマ焼結法(SPS)(1400℃、10分)で焼成し、多孔質な炭化ケイ素焼結体を得た。
実施例2と同様に成形体を準備し、その成形体を放電プラズマ焼結法(SPS)(1400℃、30分)で焼成し、多孔質な炭化ケイ素焼結体を得た。
実施例2と同様に成形体を準備し、その成形体を放電プラズマ焼結法(SPS)(1500℃、10分)で焼成し、多孔質な炭化ケイ素焼結体を得た。
実施例2と同様に成形体を準備し、その成形体をAr雰囲気中(1400℃、2h)で焼成し、多孔質な炭化ケイ素焼結体を得た。
実施例2と同様に成形体を準備し、その成形体を真空中(1400℃、2h)で焼成し、多孔質な炭化ケイ素焼結体を得た。
実施例2と同様に成形体を準備し、その成形体をホットプレス(1400℃、1h)で焼成し、多孔質な炭化ケイ素焼結体を得た。
平均粒径20nmの炭化ケイ素粉末に、焼結助剤としてY2O3、Al2O3をそれぞれ5質量%添加した混合粉末をプレス成形して、直径30mm、厚さ6mmの円盤状の成形体を準備した。この成形体をAr雰囲気中で2000度で焼成し、緻密質な炭化ケイ素焼結体を得た。
平均粒径20nmの炭化ケイ素粉末にSrCO3、Al2O3をそれぞれ5質量%添加した混合粉末をプレス成形して、直径30mm、厚さ6mmの円盤状の成形体を準備した。この成形体をAr雰囲気中で1500度で焼成し、緻密質な炭化ケイ素焼結体を得た。
平均粒径20nmの炭化ケイ素粉末をプレス成形して、直径30mm、厚さ6mmの円盤状の成形体を準備した。この成形体を大気雰囲気中で1500度で焼成し、緻密質な炭化ケイ素焼結体を得た。
平均粒径40nmの窒化アルミニウム粉末をプレス成形して、直径30mm、厚さ6mmの円盤状の成形体を準備した。この成形体を窒素雰囲気中で1400度で焼成し、多孔質な窒化アルミニウム焼結体を得た。
平均粒径25nmの窒化珪素粉末をプレス成形して、直径30mm、厚さ6mmの円盤状の成形体を準備した。この成形体を窒素雰囲気中で1400度で焼成し、多孔質な窒化珪素焼結体を得た。
平均粒径10μmの炭化ケイ素粉末をプレス成形して、直径30mm、厚さ6mmの円盤状の成形体を準備した。この成形体をAr雰囲気中で2200℃で焼成し、多孔質な炭化ケイ素焼結体を得た。
Claims (14)
- 室温におけるフォノンの見かけの平均自由行程LAMFPを
LAMFP=(3×熱伝導率)/(熱容量×音速)
で定義したとき、
微構造の代表長さLaが0.1LAMFP≦La≦100LAMFPであり、熱伝導率が室温から100℃の間で単調に増加するセラミックス材料。 - 100℃における熱伝導率が室温の熱伝導率の1.5倍以上である請求項1に記載のセラミックス材料。
- 200℃での熱伝導率が室温の熱伝導率の2倍以上である請求項1または2に記載のセラミックス材料。
- 母材に異種材料が分散した複合材料によって構成され、異種材料粒子と異種材料粒子の間隔GIが前記微構造の前記代表長さLaである請求項1〜3のいずれか1項に記載のセラミックス材料。
- 前記異種材料粒子と前記異種材料粒子の間隔GIの平均値をGIaveとするとき、前記異種材料粒子と前記異種材料粒子の間隔GIが0.1GIave以上10GIave以下である請求項4に記載のセラミックス材料。
- 前記母材がSiCであり、前記異種材料粒子が、O、B、C、N、Al、Si、およびYからなる群から選ばれる少なくとも一種が含まれるものである請求項5に記載のセラミックス材料。
- 前記母材がSiCあり、GIaveが10〜500nmである請求項5または6に記載のセラミックス材料。
- 多孔体によって構成され、前記多孔体中の気孔と気孔の間隔PIが前記微構造の前記代表長さLaである請求項1〜3のいずれか1項に記載のセラミックス材料。
- 前記気孔と前記気孔の間隔PIの平均値をPIaveとするとき、前記気孔と前記気孔の間隔PIが0.1PIave以上10PIave以下である請求項8に記載のセラミックス材料。
- 前記セラミックス材料がSiCの多孔体であって、PIaveが10〜500nmである請求項9に記載のセラミックス材料。
- 多結晶によって構成され、結晶粒子の粒径dが前記微構造の前記代表長さLaである請求項1〜3のいずれか1項に記載のセラミックス材料。
- 前記結晶粒子の前記粒径dの平均値をdaveとするとき、前記粒径dが0.1dave以上10dave以下である請求項11に記載のセラミックス材料。
- 前記セラミックス材料がSiCの多結晶体であり、daveが10〜500nmである請求項12に記載のセラミックス材料。
- 請求項1〜13のいずれか1項に記載のセラミックス材料を用いた、温度により熱伝導率が変化する熱スイッチ。
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