JPWO2013141166A1 - Solder-coated ball and method for manufacturing the same - Google Patents
Solder-coated ball and method for manufacturing the same Download PDFInfo
- Publication number
- JPWO2013141166A1 JPWO2013141166A1 JP2013525072A JP2013525072A JPWO2013141166A1 JP WO2013141166 A1 JPWO2013141166 A1 JP WO2013141166A1 JP 2013525072 A JP2013525072 A JP 2013525072A JP 2013525072 A JP2013525072 A JP 2013525072A JP WO2013141166 A1 JPWO2013141166 A1 JP WO2013141166A1
- Authority
- JP
- Japan
- Prior art keywords
- solder
- plating
- mass
- solder layer
- ball
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 11
- 238000007747 plating Methods 0.000 claims abstract description 62
- 229910052718 tin Inorganic materials 0.000 claims abstract description 9
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 8
- 238000001938 differential scanning calorimetry curve Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 description 17
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- 238000002844 melting Methods 0.000 description 10
- 239000010949 copper Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910002056 binary alloy Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 5
- 229940098779 methanesulfonic acid Drugs 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/17—Metallic particles coated with metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/264—Bi as the principal constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C12/00—Alloys based on antimony or bismuth
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
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- C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/16—Apparatus for electrolytic coating of small objects in bulk
- C25D17/22—Apparatus for electrolytic coating of small objects in bulk having open containers
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Abstract
本発明による実施形態のはんだ被覆ボール(10A)は、ボール状のコア(11)と、コア(11)を被覆するように形成されたはんだ層(12)とを有し、はんだ層(12)は、SnとBiとを含み、Bi含有率が45質量%以上65質量%以下で、且つ、Biの含有率は、内側で高く、外側で低い。他のはんだ被覆ボール(10B)は、コア11とはんだ層12との間にNiめっき層13をさらに有する。A solder-coated ball (10A) according to an embodiment of the present invention has a ball-shaped core (11) and a solder layer (12) formed so as to cover the core (11), and the solder layer (12). Contains Sn and Bi, the Bi content is 45 mass% or more and 65 mass% or less, and the Bi content is high on the inside and low on the outside. Another solder-coated ball (10 </ b> B) further includes a Ni plating layer 13 between the core 11 and the solder layer 12.
Description
本発明は、半導体パッケージの入出力端子に用いられるはんだ被覆ボールおよびその製造方法に関する。 The present invention relates to a solder coated ball used for an input / output terminal of a semiconductor package and a method for manufacturing the same.
はんだ被覆ボールは、主に、電気・電子機器の部品を接続するために用いられる。具体的には、はんだ被覆ボールは、例えば、部品周囲にリード端子を持つQFP(Quard Flat Package)や、比較的小型で、多ピン化が可能なBGA(Ball Grid Array)およびCSP(Chip Size Package)などの半導体パッケージの入出力端子に用いられる。はんだ被覆ボールは、例えば直径が50μm〜1.5mm程度の金属または樹脂で形成された微小球の表面に、鉛(Pb)を含むはんだ層が設けられた構造を有している。 Solder-coated balls are mainly used for connecting parts of electric / electronic devices. Specifically, the solder-coated balls are, for example, QFP (Quad Flat Package) having lead terminals around the component, BGA (Ball Grid Array) and CSP (Chip Size Package) which are relatively small and can be multi-pinned. It is used for input / output terminals of semiconductor packages such as The solder-coated ball has a structure in which a solder layer containing lead (Pb) is provided on the surface of a microsphere formed of a metal or resin having a diameter of about 50 μm to 1.5 mm, for example.
近年、鉛を含むはんだは、環境問題に対応して、無鉛はんだ(Pbフリーはんだ)に置き換えられつつある。例えば、特許文献1や特許文献2には、鉛を含まない錫−銀(Sn−Ag)系はんだ層を有するはんだ被覆ボールが開示されている。しかしながら、錫−銀系のはんだ層は、融点が高い(例えば220℃)という問題がある。
In recent years, lead-containing solder is being replaced with lead-free solder (Pb-free solder) in response to environmental problems. For example,
そこで、特許文献3には、錫−ビスマス(Sn−Bi)二元系のはんだ層を有するはんだ被覆ボールが開示されている。特許文献3によると、錫−ビスマスの二元系のはんだ層のBiの含有率を最内周において15.0質量%〜22.0質量%、最外周において29.0質量%〜44.0質量%とすることによって、はんだ層の融点を140℃まで下げることができる。
Therefore,
しかしながら、本発明者の検討によると、特許文献3に記載の技術には下記の問題がある。
However, according to the study of the present inventor, the technique described in
図7に示す錫−ビスマスの二元系の状態図から理解されるように、Biの含有率が低い組成であっても140℃で液相が出現し得る。しかしながら、特許文献3に記載されている組成範囲のはんだ層を完全に溶融状態(液相)にするためには、200℃超の温度に加熱する必要があり、そのため、特許文献3の実施例では、220℃でリフローしていると考えられる。また、特許文献3に記載されている組成範囲は、固液共存状態となる組成を多く含むので、200℃超の温度に加熱しないと、溶融状態が不安定になり、固化後のはんだ層の構造が不均一になりやすい。すなわち、特許文献3に記載のはんだ被覆ボールを160℃以下の温度でリフローすると、固化後のはんだ層の構造が不均一になり、結果的に、機械特性のばらつきが大きくなるという問題がある。さらに、特許文献3に記載のように、Bi濃度をはんだ層の外側で高くするためには、めっきを行いながら、めっき液にBiを補充する必要があり、めっき液中のBiの濃度の管理が難しい。
As understood from the phase diagram of the binary system of tin-bismuth shown in FIG. 7, a liquid phase can appear at 140 ° C. even with a composition having a low Bi content. However, in order to make the solder layer having the composition range described in
本発明は、上記課題に鑑みてなされたものであり、その目的は、160℃以下の温度でリフロー可能なはんだ被覆ボールおよびその製造方法を提供することにある。 This invention is made | formed in view of the said subject, The objective is to provide the solder coating ball | bowl which can be reflowed at the temperature of 160 degrees C or less, and its manufacturing method.
本発明による実施形態のはんだ被覆ボールは、ボール状のコアと、前記コアを被覆するように形成されたはんだ層とを有し、前記はんだ層は、SnとBiとを含み、Bi含有率が45質量%以上65質量%以下で、且つ、Biの含有率は、内側で高く、外側で低い。前記はんだ層は、実質的にSnとBiとだけを含む二元系合金で形成されている。ここで、「実質的にSnとBiとだけを含む」とは、本発明の効果が得られない程度にまで融点に影響を与えない限り他の元素を含み得ることを意味する。 A solder-coated ball according to an embodiment of the present invention includes a ball-shaped core and a solder layer formed so as to cover the core, and the solder layer includes Sn and Bi, and has a Bi content. It is 45 mass% or more and 65 mass% or less, and the content rate of Bi is high inside, and is low outside. The solder layer is formed of a binary alloy containing substantially only Sn and Bi. Here, “substantially containing only Sn and Bi” means that other elements can be included unless the melting point is affected to the extent that the effects of the present invention are not obtained.
ある実施形態において、昇温速度が10℃/分で測定したDSC曲線におけるオフセット温度は160℃以下である。このとき、オンセット温度は135℃以上であることが好ましい。 In an embodiment, the offset temperature in the DSC curve measured at a rate of temperature increase of 10 ° C./min is 160 ° C. or less. At this time, the onset temperature is preferably 135 ° C. or higher.
ある実施形態において、前記はんだ被覆ボールは、前記コアと前記はんだ層との間にNiめっき層をさらに有する。このとき、前記コアは銅で形成されていることが好ましい。 In one embodiment, the solder-coated ball further has a Ni plating layer between the core and the solder layer. At this time, the core is preferably made of copper.
本発明による実施形態のはんだ被覆ボールの製造方法は、上記のいずれかに記載のはんだ被覆ボールを製造する方法であって、ボール状のコアを用意する工程と、垂直軸を中心に回転しているめっき槽内のめっき液中で前記コアにめっき法ではんだ層を形成する工程とを包含する。 A method for producing a solder-coated ball according to an embodiment of the present invention is a method for producing a solder-coated ball according to any one of the above, wherein a step of preparing a ball-shaped core and a rotation about a vertical axis are performed. Forming a solder layer on the core in a plating solution in a plating bath.
本発明の実施形態によると、160℃以下の温度でリフロー可能なはんだ層を有するはんだ被覆ボールおよびその製造方法が提供される。 According to an embodiment of the present invention, a solder-coated ball having a solder layer that can be reflowed at a temperature of 160 ° C. or less and a method for manufacturing the same are provided.
以下、図面を参照して、本発明の実施形態によるはんだ被覆ボールおよびその製造方法を説明する。 Hereinafter, a solder coated ball and a method for manufacturing the same according to an embodiment of the present invention will be described with reference to the drawings.
図1(a)および(b)に、本発明の実施形態によるはんだ被覆ボール10Aおよび10Bの模式的な断面図を示す。
1A and 1B are schematic cross-sectional views of solder-coated
図1(a)に示すはんだ被覆ボール10Aは、ボール状(球状)のコア11と、コア11を被覆するように形成されたはんだ層12とを有する。はんだ層12は、SnとBiとを含み、Bi含有率が45質量%以上65質量%以下で、且つ、Biの含有率は、内側で高く、外側で低い。はんだ層12は、実質的にSnとBiとだけを含む二元系合金で形成されている。コア11は、金属または樹脂で形成されている。金属は、例えば銅(Cu)または銅を含む合金、ステンレス鋼(SUS)である。コア11の直径は、例えば50μm以上1.5mm以下である。
A solder-coated
図1(b)に示すはんだ被覆ボール10Bは、コア11の表面にめっき層13をさらに有し、めっき層13の上にはんだ層12を有している点において、はんだ被覆ボール10Aと異なっている。めっき層13は、例えばニッケル(Ni)めっき層である。めっき層13の厚さは、例えば0.1μm以上4μm以下である。例えば、銅(Cu)で形成されたコア11に直接はんだ層12が形成されたはんだ被覆ボール10Aをリフローすると、コア11とはんだ層12との界面にCu6Sn5の金属間化合物が生成され、落下衝撃性が低下することがある。めっき層13を設けることによって、上記の金属間化合物が生成されるのを防止することができる。A solder-coated
実質的にSnとBiとだけを含む二元系合金において、Bi含有率が45質量%以上65質量%以下の組成は、共晶組成(Biの含有率が58質量%、図7参照)に近く、固液共存状態となる温度範囲が139℃以上160℃以下と狭い。従って、160℃以下の温度でリフローできるだけでなく、均一で、安定な溶融状態が得られるので、固化後(接合後)のはんだ層の構造の均一性が高く、機械特性のばらつきが小さい。本発明の実施形態によるはんだ被覆ボール10Aおよび10Bが有するはんだ層12は、昇温速度が10℃/分で測定したDSC曲線におけるオフセット温度が160℃以下であり、オンセット温度は135℃以上であることが好ましい。
In a binary alloy containing substantially only Sn and Bi, the composition having a Bi content of 45% by mass or more and 65% by mass or less is a eutectic composition (the Bi content is 58% by mass, see FIG. 7). Nearly, the temperature range where the solid-liquid coexistence state is as narrow as 139 ° C or more and 160 ° C or less. Accordingly, not only can the reflow be performed at a temperature of 160 ° C. or lower, but a uniform and stable molten state can be obtained. Therefore, the uniformity of the structure of the solder layer after solidification (after joining) is high, and the variation in mechanical properties is small. The
Biの含有率が内側(コア11側)で高く、外側で低いというBiの濃度分布は、容易に形成することができる。めっき液中で、Snは陽極の溶解によって随時めっき液中に補給されるのに対し、Biはめっきの初期に添加した後、補充しなければ、めっきの進行に連れて、めっき液中のSnの存在比率が増大(Biの存在比率が低下)することになる。したがって、本発明の実施形態によるはんだ被覆ボール10Aおよび10Bは、特許文献3に記載のはんだ被覆ボールに比べて、容易に製造することができるという利点を有している。
A Bi concentration distribution in which the Bi content is high on the inner side (
本発明の実施形態によるはんだ被覆ボールの製造方法は、上記のはんだ被覆ボールを製造する方法であって、ボール状のコアを用意する工程と、垂直軸(鉛直軸)を中心に回転しているめっき槽内のめっき液中でコアにめっき法ではんだ層を形成する工程とを包含することが好ましい。 A method of manufacturing a solder-coated ball according to an embodiment of the present invention is a method of manufacturing the above-described solder-coated ball, and a step of preparing a ball-shaped core and rotating about a vertical axis (vertical axis) It is preferable to include a step of forming a solder layer on a core by a plating method in a plating solution in a plating tank.
垂直軸を中心にめっき槽を回転させながらめっきを行う工程は、例えば、図2に示す高速回転めっき装置100を用いて実施することができる。
The step of performing plating while rotating the plating tank around the vertical axis can be performed using, for example, a high-speed
高速回転めっき装置100は、垂直に延びる回転軸1に支持された水平回転可能な、円筒状のめっき槽7を有している。めっき槽7は、円盤状の底部7aと、底部7aに接続され、底部7aを拡張するように続く傾斜部7bと、傾斜部7bに接続され陰極を有する第1円筒部7cと、第1円筒部7cに接続され、第1円筒部7cよりも内径の小さい第2円筒部7dとを有している。めっき槽7の上面は、底部7aと平行な平板状の上蓋6で覆われ、第2円筒部7dに接続されている。回転軸1は、例えばモーターの軸であって、めっき槽底部7aを支持するとともに、めっき槽7を回転させることができる。勿論、正回転と逆回転の両方をできるようにしてもよい(例えば、最大回転数1000rpm)。
The high-speed
めっき装置100は、めっき槽7の第1円筒部7cに陰極が設けられている。被めっき物5が陰極に接触したときに、被めっき物5に通電され、めっき層が形成される。第1円筒部7cに配設する陰極には、例えばチタン、真ちゅう、ステンレス、銅などが使用できる。
In the
上蓋6は、その中央部に、陽極3をめっき槽7内へ入れるための開口部を有している。ここでは、陽極3に錫(Sn)を用いる。めっき装置100は、不図示の直流電源を有し、第1円筒部7cの陰極と、陽極3との間に電圧を印加する。印加電圧は、印加電流値または電圧を一定に保つように制御される。なお、電流密度を一定に保つように制御してもよいが、操作が煩雑になる。
The upper lid 6 has an opening for inserting the
上蓋6の開口部は、円筒部材8で囲われている。円筒部材8は、めっき槽7の高速回転時または反転時において、めっき液4が飛散するのを防止する。
The opening of the upper lid 6 is surrounded by a
また、上蓋6は、めっき槽7の高速回転時における、めっき槽7の中心部のめっき液面の変動を抑制する。従って、陽極3の全体または大部分がめっき液4から露出することを防ぐことができるので、均一な膜厚で良好な外観のめっき層を形成することができる。
Further, the upper lid 6 suppresses fluctuations in the plating solution surface at the center of the
また、めっき槽7は、内周部に傾斜部7bを有するので、遠心力を受けた被めっき物5は傾斜部7bをせり上がる。これにより、被めっき物5がめっき槽7の底部に溜まることを防ぎ、被めっき物5を容易に、第1円筒部7cの陰極に接触させることができる。また、第1円筒部7cの上に、第1円筒部7cよりも内径の小さい第2円筒部7dを有するので、被めっき物5を第1円筒部7cの陰極に効率的に接触させることができる。傾斜部7bの傾斜角αは、0°超90°未満で、被めっき物5の量やめっき槽7の回転速度等に応じて、適宜設定され得る。例えば、αは45°である。なお、第2円筒部7dの内径は、傾斜部7bの最小内径と同程度であることが好ましい。
Moreover, since the
次に、いくつかの実験結果を例示して、本発明の実施形態によるはんだ被覆ボール10Aおよびその製造方法を詳しく説明する。
Next, by illustrating some experimental results, the solder coated
以下の実験例では、図2に示した高速回転めっき装置100を用いて、はんだ層12を有するはんだ被覆ボール10Aを作製した。ここで、めっき装置100のめっき槽7の外周は180mmで、回転速度は350rpmとした。めっき液4としては、メタンスルホン酸系のめっき液(例えば、大和化成研究所が市販している)を用いることができる。めっき液は、メタンスルホン酸Sn、メタンスルホン酸Bi、メタンスルホン酸および界面活性剤を含んでいる。この他、特許文献3に記載されているめっき液など公知のめっき液を用いることができる。それぞれの濃度は、形成するはんだ層12の組成に応じて調整した。なお、めっきを開始してからは、メタンスルホン酸Biを追加せず、印加電流を一定に保つように電圧を調整し、Biの含有率が内側で高く、外側で低いはんだ層を形成した。コア11としては、直径が560μmの銅の球を用いた。はんだ層12の厚さは約20μmとした。
In the following experimental example, a solder-coated
図3(a)、(b)および(c)に、本発明の実施形態による実施例のはんだ被覆ボールA、BおよびCのDSC曲線をそれぞれ示す。はんだ被覆ボールAは、Biを53質量%含むSn−Bi二元系はんだ層を有し、はんだ被覆ボールBは、Biを45質量%含むSn−Bi二元系はんだ層を有し、はんだ被覆ボールCは、Biを65質量%含むSn−Bi二元系はんだ層を有する。図4(a)および(b)に、比較例のはんだ被覆ボールDおよびEのDSC曲線を示す。はんだ被覆ボールDは、Biを18質量%含むSn−Bi二元系はんだ層を有し、はんだ被覆ボールEは、Biを79質量%含むSn−Bi二元系はんだ層を有する。 FIGS. 3A, 3B and 3C show DSC curves of the solder coated balls A, B and C of the examples according to the embodiment of the present invention, respectively. The solder-coated ball A has a Sn-Bi binary solder layer containing 53% by mass of Bi, and the solder-coated ball B has a Sn-Bi binary solder layer containing 45% by mass of Bi. The ball C has a Sn—Bi binary solder layer containing 65% by mass of Bi. 4 (a) and 4 (b) show DSC curves of the solder coated balls D and E of the comparative example. The solder-coated ball D has a Sn-Bi binary solder layer containing 18% by mass of Bi, and the solder-coated ball E has a Sn-Bi binary solder layer containing 79% by mass of Bi.
DSCの測定には、エスアイアイ・ナノテクノロジー社製の示差走査熱量計DSC6220を用いた。試料は、40mgのはんだ被覆ボールで、アルミニウム製のパンを用いた。昇温速度は10℃/分で、測定温度範囲は100℃〜250℃とし、サンプリング間隔は0.2秒とした。キャリアガスにはアルゴンを用いた。 For the DSC measurement, a differential scanning calorimeter DSC6220 manufactured by SII Nano Technology was used. The sample was a 40 mg solder-coated ball, and an aluminum pan was used. The heating rate was 10 ° C./min, the measurement temperature range was 100 ° C. to 250 ° C., and the sampling interval was 0.2 seconds. Argon was used as the carrier gas.
図3(a)に示すように、Biの含有率が53質量%のはんだ被覆ボールAのDSC曲線において、オンセット温度(融解開始温度)は137.4℃であり、オフセット温度(融解終了温度)は144.8℃である。このように、はんだ層12の組成が共晶組成(Biが58質量%)に近いので、融解ピークはシャープであり、160℃以下の温度で十分にリフローすることが可能な、均質なはんだ層12を得ることができる。
As shown in FIG. 3A, in the DSC curve of the solder-coated ball A having a Bi content of 53 mass%, the onset temperature (melting start temperature) is 137.4 ° C., and the offset temperature (melting end temperature). ) Is 144.8 ° C. Thus, since the composition of the
また、図3(b)に示すように、Biの含有率が45質量%のはんだ被覆ボールBのDSC曲線においては、オンセット温度は136.9℃であり、オフセット温度は153.3℃である。このように、Biの含有率が45質量%であっても、融解ピークはシャープであり、160℃以下の温度で十分にリフローすることが可能な、均質なはんだ層12を得ることができる。
Further, as shown in FIG. 3B, in the DSC curve of the solder-coated ball B having a Bi content of 45 mass%, the onset temperature is 136.9 ° C., and the offset temperature is 153.3 ° C. is there. Thus, even if the Bi content is 45% by mass, the melting peak is sharp, and a
さらに、図3(c)に示すように、Biの含有率が65質量%のはんだ被覆ボールCのDSC曲線においては、オンセット温度は136.9℃であり、オフセット温度は159.8℃である。このように、Biの含有率が65質量%であっても、融解ピークはシャープであり、160℃以下の温度で十分にリフローすることが可能な、均質なはんだ層12を得ることができる。
Furthermore, as shown in FIG. 3C, in the DSC curve of the solder-coated ball C having a Bi content of 65% by mass, the onset temperature is 136.9 ° C. and the offset temperature is 159.8 ° C. is there. Thus, even when the Bi content is 65% by mass, the melting peak is sharp, and a
一方、図4(a)に示す、Biの含有率が18質量%のはんだ被覆ボールDのDSC曲線においては、オンセット温度は138.0℃であり、十分に低いが、オフセット温度は185.2℃と160℃を超えている。また、図4(b)に示す、Biの含有率が79質量%のはんだ被覆ボールEのDSC曲線においては、オンセット温度は136.9℃であり、十分に低いが、オフセット温度は195.8℃と160℃を大きく超えている。このように、共晶組成から大きく外れると、はんだ層は160℃以下の温度で完全に融解せず、また、固化後の構造も不均一になりやすい。
On the other hand, in the DSC curve of the solder-coated ball D having a Bi content of 18% by mass shown in FIG. 4A, the onset temperature is 138.0 ° C., which is sufficiently low, but the offset temperature is 185.%. It exceeds 2 ° C and 160 ° C. Moreover, in the DSC curve of the solder-coated ball E having a Bi content of 79% by mass shown in FIG. 4B, the onset temperature is 136.9 ° C., which is sufficiently low, but the offset temperature is 195. It greatly exceeds 8 ° C and 160 ° C. As described above, if the eutectic composition deviates greatly, the solder layer is not completely melted at a temperature of 160 ° C. or lower, and the structure after solidification tends to be non-uniform.
従って、160℃以下の温度でリフローが可能で、均質なはんだ層12を得るためには、Biの含有率は45質量%以上であることが好ましい。一方、Biの含有率は65質量%以下であることが好ましく、さらにBi含有量が少ない方が融点がより低くなるため、Biの含有率が58質量%未満である(共晶組成よりもBi含有率が低い)ことがさらに好ましい。図7の状態図からは、Biの含有率が45質量%の合金と同じ融点となるBiの含有率は65質量%を超えるが、Biの含有率が大き過ぎると、はんだの接合強度のばらつきが大きくなる等の問題が発生する。これは、Biの含有率が共晶組成を超えると、Biの溶融状態が不安定となり、はんだ層12を溶融固化した後の構造が不均一となるためと考えられる。特に、Biの含有率が65質量%を超えると、機械特性のばらつきが大きくなる。
Therefore, in order to obtain a
図5(a)および(b)に、上記のはんだ被覆ボールAの断面のSEMによる組成像を示している。図5(a)は図5(b)の拡大図である。図6に、特許文献3に記載の回転バレル法で作製したはんだ被覆ボールの断面SEM像(組成像)を示す。
5A and 5B show SEM composition images of the cross section of the solder-coated ball A described above. FIG. 5A is an enlarged view of FIG. FIG. 6 shows a cross-sectional SEM image (composition image) of a solder-coated ball produced by the rotating barrel method described in
図5(a)、(b)と図6との比較から、バレルめっき法を採用すると、はんだ層内に「す(空隙)」が形成されているのに対し(図6)、高速回転めっき装置を用いることによって、「す」のない緻密なはんだ層12が得られることがわかる(図5(a)および(b))。
From the comparison between FIG. 5 (a), FIG. 5 (b) and FIG. 6, when the barrel plating method is adopted, “s (void)” is formed in the solder layer (FIG. 6), whereas high-speed rotation plating is performed. It can be seen that a
また、図5(a)および(b)において、比較的明るい点が内側に多く分布していることから、Snよりも重元素であるBiの含有率が内側(コア側)で高くなっていることがわかる。一般に、SEMの組成像において、軽元素は比較的暗く、重元素は比較的明るく観察される。 5A and 5B, since relatively bright spots are distributed on the inner side, the content of Bi, which is a heavy element, is higher on the inner side (core side) than Sn. I understand that. In general, in a SEM composition image, light elements are observed to be relatively dark and heavy elements are observed to be relatively bright.
このように、高速回転めっき装置を用いると、緻密なはんだ層を有する実施例のはんだ被覆ボールを容易に製造することができる。 As described above, when the high-speed rotary plating apparatus is used, the solder-coated ball of the embodiment having a dense solder layer can be easily manufactured.
本発明には、半導体パッケージの入出力端子に用いられるはんだ被覆ボールおよびその製造方法に好適に用いられる。 The present invention is suitably used for solder-coated balls used for input / output terminals of a semiconductor package and a method for manufacturing the same.
10A、10B 被覆ボール
11 コア
12 はんだ層
13 めっき層(Niめっき層)10A, 10B Coated
Claims (4)
前記コアを被覆するように形成されたはんだ層とを有し、
前記はんだ層は、SnとBiとを含み、Bi含有率が45質量%以上65質量%以下で、且つ、Biの含有率は、内側で高く、外側で低い、はんだ被覆ボール。A ball-shaped core,
A solder layer formed to cover the core;
The solder layer includes Sn and Bi, the Bi content is 45% by mass or more and 65% by mass or less, and the Bi content is high on the inside and low on the outside.
ボール状のコアを用意する工程と、
垂直軸を中心に回転しているめっき槽内のめっき液中で前記コアにめっき法ではんだ層を形成する工程とを包含する、はんだ被覆ボールの製造方法。A method for producing a solder-coated ball according to any one of claims 1 to 3,
Preparing a ball-shaped core;
Forming a solder layer on the core by a plating method in a plating solution in a plating tank rotating about a vertical axis.
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US9351407B1 (en) | 2015-01-08 | 2016-05-24 | Freescale Semiconductor, Inc. | Method for forming multilayer device having solder filled via connection |
CN105345304B (en) * | 2015-12-02 | 2017-07-25 | 华北水利水电大学 | A kind of supersaturated solder and preparation method thereof |
JP6587099B2 (en) * | 2015-12-15 | 2019-10-09 | 三菱マテリアル株式会社 | Solder powder, method for producing the same, and method for preparing solder paste using the powder |
WO2018056313A1 (en) * | 2016-09-21 | 2018-03-29 | 新日鉄住金マテリアルズ株式会社 | Multilayer metal ball |
JP6217836B1 (en) * | 2016-12-07 | 2017-10-25 | 千住金属工業株式会社 | Nuclear material, semiconductor package and bump electrode forming method |
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WO2018189901A1 (en) * | 2017-04-14 | 2018-10-18 | Ykk株式会社 | Plated material and manufacturing method therefor |
CN107541702A (en) * | 2017-09-08 | 2018-01-05 | 张家港创博金属科技有限公司 | A kind of is efficiently the method and apparatus of caryosphere coating |
JP6376266B1 (en) * | 2017-10-24 | 2018-08-22 | 千住金属工業株式会社 | Nuclear material, solder joint and bump electrode forming method |
CN107877030B (en) * | 2017-11-07 | 2020-01-14 | 深圳市汉尔信电子科技有限公司 | Nano tin-bismuth composite soldering paste and preparation method thereof |
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