JPWO2012168993A1 - Production method of onion-like carbon - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 68
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 23
- 239000007789 gas Substances 0.000 claims abstract description 150
- 239000000843 powder Substances 0.000 claims abstract description 136
- 238000000034 method Methods 0.000 claims abstract description 69
- 238000006243 chemical reaction Methods 0.000 claims abstract description 37
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 30
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 30
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 30
- 239000011261 inert gas Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims description 46
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 25
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 25
- 238000002360 preparation method Methods 0.000 claims description 22
- 239000007858 starting material Substances 0.000 abstract description 9
- 229910021385 hard carbon Inorganic materials 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 27
- 238000004458 analytical method Methods 0.000 description 23
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 21
- 229910052786 argon Inorganic materials 0.000 description 14
- -1 hydrogen radicals Chemical class 0.000 description 7
- 238000000354 decomposition reaction Methods 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 241000234282 Allium Species 0.000 description 1
- 235000002732 Allium cepa var. cepa Nutrition 0.000 description 1
- 206010007269 Carcinogenicity Diseases 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001485 argon Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 150000001723 carbon free-radicals Chemical class 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000007670 carcinogenicity Effects 0.000 description 1
- 231100000260 carcinogenicity Toxicity 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/18—Nanoonions; Nanoscrolls; Nanohorns; Nanocones; Nanowalls
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
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Abstract
【課題】 オニオンライクカーボン(OLC)を低コストで作製する。【解決手段】 本発明では、第1ステップとしてのDLC粉末作製処理において、炭化水素系ガスを材料ガスとするプラズマCVD法によって硬質炭素粉末であるDLC粉末が作製される。続いて、第2ステップとしてのDLC−OLC変換処理において、当該DLC粉末が真空中または不活性ガス雰囲気中でヒータ加熱される。これにより、DLC粉末がOLCに変換され、つまり当該OLCが作製される。このように、本発明によれば、炭化水素系ガスを出発原料としてOLCが作製されるので、当該OLCを極めて低コストで作製することができる。PROBLEM TO BE SOLVED: To produce onion-like carbon (OLC) at low cost. In the present invention, in a DLC powder production process as a first step, a DLC powder that is a hard carbon powder is produced by a plasma CVD method using a hydrocarbon-based gas as a material gas. Subsequently, in the DLC-OLC conversion process as the second step, the DLC powder is heated with a heater in a vacuum or in an inert gas atmosphere. Thereby, DLC powder is converted into OLC, that is, the OLC is produced. Thus, according to the present invention, since the OLC is produced using the hydrocarbon-based gas as a starting material, the OLC can be produced at an extremely low cost.
Description
本発明は、オニオンライクカーボン(Onion Like Carbon;以下「OLC」と言う。)の作製方法および作製装置に関する。 The present invention relates to a manufacturing method and a manufacturing apparatus for onion like carbon (hereinafter referred to as “OLC”).
OLCは、直径が数nm〜数十nmの球状粒子であり、大気中および真空中のいずれにおいても極めて低い摩擦係数を示し、また耐面圧性にも優れていることから、特に固体潤滑剤としての応用が期待されている。このようなOLCの作製方法として、従来、例えば特許文献1に開示されたものがある。この従来技術によれば、衝撃合成法(爆発法)によって直径4nm〜6nmのダイヤモンド微粉末(Diamond Nano Powder;以下「DNP」と言う。)が作製される。そして、このDNPが1600℃〜1800℃の不活性ガス雰囲気中で加熱処理されることによってOLCが作製される。 Since OLC is a spherical particle having a diameter of several nm to several tens of nm, exhibits an extremely low coefficient of friction both in the air and in vacuum, and is excellent in surface pressure resistance, particularly as a solid lubricant. The application of is expected. As a method for producing such an OLC, there is a conventional method disclosed in Patent Document 1, for example. According to this prior art, diamond nano powder (hereinafter referred to as “DNP”) having a diameter of 4 nm to 6 nm is produced by an impact synthesis method (explosion method). Then, this DNP is heat-treated in an inert gas atmosphere at 1600 ° C. to 1800 ° C. to produce an OLC.
しかし、上述の従来技術では、出発原料であるDNPが高価(1g当たり5000円前後)であるため、最終目的物であるOLCもまた高価になる。つまり、コスト面に問題がある。 However, in the above-described prior art, since the starting material DNP is expensive (around 5000 yen per gram), the final target OLC is also expensive. That is, there is a problem in cost.
そこで、本発明は、従来よりも低コストでOLCを作製できる方法および装置を提供することを、目的とする。 Therefore, an object of the present invention is to provide a method and an apparatus capable of producing an OLC at a lower cost than conventional ones.
この目的を達成するために、本発明は、OLCの作製方法に係る第1発明と、当該OLCの作製装置に係る第2発明と、を提供する。このうちの第1発明は、材料ガスとして炭化水素系ガスを用いたプラズマCVD(Chemical Vapor Deposition)法によってDLC(Diamond like Carbon)粉末を作製するDLC粉末作製過程と、このDLC粉末作成過程において作製されたDLC粉末を真空中または不活性ガス雰囲気中で加熱することによって当該DLC粉末をオニオンライクカーボンに変換する変換過程と、を具備する。 In order to achieve this object, the present invention provides a first invention according to an OLC manufacturing method and a second invention according to the OLC manufacturing apparatus. Of these, the first invention is a DLC powder production process for producing DLC (Diamond like Carbon) powder by a plasma CVD (Chemical Vapor Deposition) method using a hydrocarbon gas as a material gas, and a DLC powder production process. And converting the DLC powder into onion-like carbon by heating the DLC powder in vacuum or in an inert gas atmosphere.
即ち、本第1発明によれば、炭化水素系ガスを出発原料としてOLCが作製(または「合成」とも呼ばれる。)される。具体的には、DLC粉末作製過程において、炭化水素系ガスを材料ガスとして用いたプラズマCVD法によって硬質炭素粉末であるDLC粉末が作製される。そして、変換過程において、当該DLC粉末が真空中または不活性ガス雰囲気中で加熱される。これにより、DLC粉末がOLCに変換され、つまり当該OLCが作製される。 That is, according to the first aspect of the present invention, OLC is produced (also referred to as “synthesis”) using a hydrocarbon-based gas as a starting material. Specifically, in the DLC powder production process, a DLC powder that is a hard carbon powder is produced by a plasma CVD method using a hydrocarbon-based gas as a material gas. In the conversion process, the DLC powder is heated in a vacuum or in an inert gas atmosphere. Thereby, DLC powder is converted into OLC, that is, the OLC is produced.
なお、炭化水素系ガスとしては、アセチレン(C2H2)ガスやメタン(CH4)ガス,エチレン(C2H4)ガス,ベンゼン(C6H6)ガス等があるが、DLC粉末の作製効率やコスト、取り扱い易さ、調達容易性、安全性等の総合的な観点から、アセチレンガスが好適である。The hydrocarbon gas includes acetylene (C 2 H 2 ) gas, methane (CH 4 ) gas, ethylene (C 2 H 4 ) gas, benzene (C 6 H 6 ) gas, etc. Acetylene gas is preferred from the comprehensive viewpoints of production efficiency, cost, ease of handling, ease of procurement, safety, and the like.
また、DLC粉末作成過程は、次のようなプラズマ発生過程とガス導入過程と温度制御過程とを含むものであってもよい。即ち、プラズマ発生過程において、基準電位に接続された真空槽と当該真空槽内に設置された開口形状の容器とを一対の電極として、これらに交流の放電用電力が供給される。これにより、容器内を含む真空槽内にプラズマが発生する。そして、ガス導入過程において、真空槽内に炭化水素系ガスが導入される。すると、炭化水素系ガスがプラズマによって分解(解離)されて、容器の表面、特に当該容器の内壁に、DLC粉末が作製される。このとき、容器内の温度、言わばDLC粉末の作製温度が、高すぎると、詳しくは300℃を超えると、プラズマによる炭化水素系ガスの分解粒子である水素ラジカルや水素イオンがDLC粉末と反応して、当該DLC粉末がガス化される。その結果、DLC粉末の作製効率が低下する。この不都合を回避するために、温度制御過程において、容器内の温度が300℃よりも高くならないように当該容器内の温度が制御される。 Moreover, the DLC powder preparation process may include the following plasma generation process, gas introduction process, and temperature control process. That is, in the plasma generation process, an AC discharge power is supplied to a vacuum chamber connected to a reference potential and an open container installed in the vacuum chamber as a pair of electrodes. Thereby, plasma is generated in the vacuum chamber including the inside of the container. Then, in the gas introduction process, a hydrocarbon gas is introduced into the vacuum chamber. Then, the hydrocarbon-based gas is decomposed (dissociated) by plasma, and DLC powder is produced on the surface of the container, particularly on the inner wall of the container. At this time, if the temperature in the container, that is, the production temperature of the DLC powder is too high, specifically, if it exceeds 300 ° C., hydrogen radicals and hydrogen ions, which are the decomposition particles of the hydrocarbon gas by the plasma, react with the DLC powder. Thus, the DLC powder is gasified. As a result, the production efficiency of DLC powder decreases. In order to avoid this inconvenience, the temperature in the container is controlled so that the temperature in the container does not become higher than 300 ° C. in the temperature control process.
加えて、ガス導入過程においては、真空槽と絶縁された状態にあるガス導入管を介して炭化水素系ガスが当該真空槽内に導入されると共に、当該ガス導入管の真空槽内への炭化水素系ガスの噴出口が容器の開口部の近傍に位置するのが、望ましい。これにより、容器内に炭化水素系ガスが直接的に導入され、当該容器の内壁へのDLC粉末の作製効率が向上する。併せて、DLC粉末作製過程は、ガス導入管に対して基準電位を基準とする正電位の直流電力を供給する直流電力供給過程をさらに含むのが、望ましい。このような直流電力供給過程が設けられることで、ガス導入管が言わば陽極として機能し、当該ガス導入管にプラズマ内の電子が引き込まれる。この結果、ガス導入管の周囲、特に当該ガス導入管の炭化水素系ガスの噴出口付近に、高密度の放電、いわゆるホローアノード放電が発生する。そして、このホローアノード放電が発生することによって、炭化水素系ガスの分解効率が向上し、ひいては容器の内壁へのDLC粉末の作製効率がより一層向上する。 In addition, in the gas introduction process, a hydrocarbon-based gas is introduced into the vacuum tank via a gas introduction pipe that is insulated from the vacuum tank, and carbonization of the gas introduction pipe into the vacuum tank is performed. It is desirable that the hydrogen-based gas outlet is located in the vicinity of the opening of the container. Thereby, hydrocarbon gas is directly introduce | transduced in a container and the production efficiency of DLC powder to the inner wall of the said container improves. In addition, it is desirable that the DLC powder preparation process further includes a DC power supply process for supplying a positive potential DC power based on the reference potential to the gas introduction pipe. By providing such a DC power supply process, the gas introduction tube functions as an anode, and electrons in the plasma are drawn into the gas introduction tube. As a result, a high-density discharge, so-called hollow anode discharge, is generated around the gas introduction pipe, particularly in the vicinity of the hydrocarbon-based gas outlet of the gas introduction pipe. By generating this hollow anode discharge, the decomposition efficiency of the hydrocarbon gas is improved, and as a result, the production efficiency of the DLC powder on the inner wall of the container is further improved.
また、直流電力供給過程は、プラズマの安定化にも寄与する。即ち、プラズマは、上述したように真空槽と容器とを一対の電極とする交流の放電用電力の供給によって発生する。その一方で、DLC粉末作製過程においては、容器の表面(内壁)のみならず、真空槽の表面(内壁)にも、DLC粉末が付着する。このように一対の電極としての真空槽と容器との両方の表面にDLC粉末が付着すると、特に基準電位に維持されることが前提とされる真空槽の表面にDLC粉末が付着すると、当該真空槽の電極としての機能が低下し、ひいてはプラズマが不安定になる。ここで、直流電力供給過程が設けられると、上述の如く陽極としてのガス導入管にプラズマ内の電子が引き込まれるので、当該プラズマの発生が維持され、ひいてはプラズマが安定化される。 The DC power supply process also contributes to plasma stabilization. That is, as described above, plasma is generated by supplying AC discharge power using a vacuum chamber and a container as a pair of electrodes. On the other hand, in the DLC powder production process, the DLC powder adheres not only to the surface (inner wall) of the container but also to the surface (inner wall) of the vacuum chamber. Thus, when DLC powder adheres to the surfaces of both the vacuum chamber and the container as a pair of electrodes, particularly when the DLC powder adheres to the surface of the vacuum chamber that is assumed to be maintained at a reference potential, the vacuum The function as the electrode of the tank is lowered, and the plasma becomes unstable. Here, when a DC power supply process is provided, electrons in the plasma are drawn into the gas introduction tube as the anode as described above, so that the generation of the plasma is maintained and the plasma is stabilized.
さらに、DLC粉末作製過程は、容器内にプラズマを閉じ込めるための磁場を真空槽内に形成する磁場形成過程を含んでもよい。このような磁場形成過程が設けられることで、容器内におけるプラズマの密度が向上し、ひいては当該容器の内壁へのDLC粉末の作製効率が一段と向上する。 Furthermore, the DLC powder preparation process may include a magnetic field formation process in which a magnetic field for confining plasma in the container is formed in the vacuum chamber. By providing such a magnetic field forming process, the density of plasma in the container is improved, and as a result, the production efficiency of DLC powder on the inner wall of the container is further improved.
そして、変換過程は、真空槽内を真空または不活性ガス雰囲気とする変換環境形成過程と、当該真空または不活性ガス雰囲気とされた真空槽内においてDLC粉末を700℃〜2000℃で加熱する加熱過程と、を含むものであってもよい。即ち、DLC粉末が700℃以上で加熱されれば、当該DLC粉末がOLCに変換されることが、このたび実験によって確認された。また、このDLC粉末の加熱温度が高いほど、DLC粉末からOLCへの変換効率が向上することも確認された。なお、DLC粉末の加熱法としては、ヒータ加熱法や赤外線加熱法、高周波誘導加熱法、電子ビーム照射加熱法、プラズマ加熱法等がある。また、DLC粉末は、上述の容器に収容された状態で加熱されてもよいし、別の適当な容器に移し換えられてから加熱されてもよい。ただし、DLC粉末の加熱時に例えば真空槽内に酸素が存在すると、当該DLC粉末が酸化され、詳しくは一酸化炭素(CO)や二酸化炭素(CO2)等にガス化される。この不都合を回避するべく、当該加熱を担う加熱過程の前に、変換環境形成過程が設けられ、つまり真空槽内が真空または不活性ガス雰囲気とされる。The conversion process includes a conversion environment formation process in which the inside of the vacuum chamber is made into a vacuum or an inert gas atmosphere, and heating in which the DLC powder is heated at 700 ° C. to 2000 ° C. in the vacuum chamber in the vacuum or the inert gas atmosphere And a process. That is, it has been confirmed by experiments that the DLC powder is converted to OLC when the DLC powder is heated at 700 ° C. or higher. It was also confirmed that the higher the heating temperature of the DLC powder, the higher the conversion efficiency from the DLC powder to the OLC. Note that DLC powder heating methods include a heater heating method, an infrared heating method, a high frequency induction heating method, an electron beam irradiation heating method, a plasma heating method, and the like. Further, the DLC powder may be heated in a state of being accommodated in the above-described container, or may be heated after being transferred to another appropriate container. However, for example, if oxygen is present in the vacuum chamber during the heating of the DLC powder, the DLC powder is oxidized and gasified into carbon monoxide (CO), carbon dioxide (CO 2 ), and the like. In order to avoid this inconvenience, a conversion environment forming process is provided before the heating process that bears the heating, that is, the inside of the vacuum chamber is set to a vacuum or an inert gas atmosphere.
本発明の第2発明は、第1発明に対応する方法発明であり、材料ガスとして炭化水素系ガスを用いたプラズマCVD法によってDLC粉末を作製するDLC粉末作製手段と、このDLC粉末作製手段によって作製されたDLC粉末を真空中または不活性ガス雰囲気中で加熱することによって当該DLC粉末をオニオンライクカーボンに変換する変換手段と、を具備する。 A second invention of the present invention is a method invention corresponding to the first invention, wherein a DLC powder production means for producing a DLC powder by a plasma CVD method using a hydrocarbon gas as a material gas, and the DLC powder production means. Conversion means for converting the DLC powder into onion-like carbon by heating the produced DLC powder in a vacuum or in an inert gas atmosphere.
なお、本第2発明においても、炭化水素系ガスとしては、アセチレンガスが最も好適である。 In the second invention as well, acetylene gas is most suitable as the hydrocarbon-based gas.
また、本第2発明の具体的な構成としては、基準電位に接続された真空槽と、この真空槽内に設置された開口形状の容器と、を具備するものとする。そして、DLC粉末作製手段は、次のようなプラズマ発生手段とガス導入手段と温度制御手段とを含むものとする。即ち、プラズマ発生手段は、真空槽と容器とを一対の電極として、これらに交流の放電用電力を供給することによって、当該容器内を含む真空槽内にプラズマを発生させる。そして、ガス導入手段は、真空槽内に炭化水素系ガスを導入する。さらに、温度制御手段は、容器内の温度が300℃よりも高くならないように当該容器内の温度を制御する。 Further, the specific configuration of the second invention includes a vacuum chamber connected to a reference potential and an open-shaped container installed in the vacuum chamber. The DLC powder preparation means includes the following plasma generation means, gas introduction means, and temperature control means. That is, the plasma generating means uses the vacuum chamber and the container as a pair of electrodes, and supplies AC discharge power to them, thereby generating plasma in the vacuum chamber including the container. And a gas introduction means introduce | transduces hydrocarbon type gas in a vacuum chamber. Further, the temperature control means controls the temperature in the container so that the temperature in the container does not become higher than 300 ° C.
加えて、ガス導入手段は、真空槽と絶縁された状態にあるガス導入管を含んでもよい。この場合、炭化水素系ガスは、ガス導入管を介して真空槽内に導入される。そして、ガス導入管は、その真空槽内への炭化水素系ガスの噴出口を容器の開口部の近傍に位置させるように設けられる。その上で、DLC粉末作製手段は、当該ガス導入管に対して基準電位を基準とする正電位の直流電力を供給する直流電力供給手段をも含むものとしてもよい。 In addition, the gas introduction means may include a gas introduction pipe that is insulated from the vacuum chamber. In this case, the hydrocarbon-based gas is introduced into the vacuum chamber through the gas introduction pipe. The gas introduction pipe is provided so that the hydrocarbon-based gas outlet into the vacuum chamber is positioned in the vicinity of the opening of the container. In addition, the DLC powder preparation means may include DC power supply means for supplying a positive potential DC power based on the reference potential to the gas introduction pipe.
さらに、DLC粉末作製手段は、容器内にプラズマを閉じ込めるための磁場を真空槽内に形成する磁場形成手段をも含んでもよい。 Furthermore, the DLC powder preparation means may also include magnetic field forming means for forming a magnetic field for confining plasma in the container in the vacuum chamber.
そして、変換手段は、真空槽内を真空または不活性ガス雰囲気とする変換環境形成手段と、当該真空または不活性ガス雰囲気とされた真空槽内においてDLC粉末を700℃〜2000℃で加熱する加熱手段と、を含んでもよい。 The conversion means includes a conversion environment forming means for making the inside of the vacuum chamber a vacuum or an inert gas atmosphere, and heating for heating the DLC powder at 700 ° C. to 2000 ° C. in the vacuum chamber having the vacuum or the inert gas atmosphere. Means.
本発明の一実施形態について、以下に説明する。 One embodiment of the present invention will be described below.
図1に示すように、本実施形態に係るOLC作製装置10は、両端が閉鎖された概略円筒形の真空槽12を備えている。この真空槽12は、当該円筒形の一方端に当たる部分を上壁とし、他方端に当たる部分を底壁として、設置されている。なお、この真空槽12の内部空間の直径は、約1100mmであり、高さ寸法は、約1000mmである。この真空槽12の形状や寸法は、一例であり、状況に応じて適宜に定められてもよい。また、真空槽12は、高耐食性および高耐熱性の金属、例えばSUS304等のステンレス鋼、によって形成されており、その壁部は、基準電位としての接地電位に接続されている。 As shown in FIG. 1, an OLC manufacturing apparatus 10 according to this embodiment includes a substantially cylindrical vacuum chamber 12 with both ends closed. The vacuum chamber 12 is installed with a portion corresponding to one end of the cylindrical shape as an upper wall and a portion corresponding to the other end as a bottom wall. In addition, the diameter of the internal space of this vacuum chamber 12 is about 1100 mm, and a height dimension is about 1000 mm. The shape and dimensions of the vacuum chamber 12 are examples, and may be appropriately determined according to the situation. The vacuum chamber 12 is made of a metal having high corrosion resistance and high heat resistance, for example, stainless steel such as SUS304, and its wall portion is connected to a ground potential as a reference potential.
さらに、真空槽12の壁部の適宜位置、例えば底壁の中央よりも僅かに外方寄り(図1において左側寄り)の位置には、排気口14が設けられている。この排気口14には、図示しない排気管を介して、真空槽12の外部に設けられた図示しない排気手段としての真空ポンプが結合されている。なお、真空ポンプは、真空槽12内の圧力Pを制御する圧力制御手段としても機能する。加えて、排気管の途中には、図示しないバルブが設けられており、このバルブもまた、圧力制御手段として機能する。 Furthermore, an exhaust port 14 is provided at an appropriate position of the wall portion of the vacuum chamber 12, for example, a position slightly outward from the center of the bottom wall (left side in FIG. 1). The exhaust port 14 is connected to a vacuum pump (not shown) as an exhaust means (not shown) provided outside the vacuum chamber 12 via an exhaust pipe (not shown). The vacuum pump also functions as a pressure control unit that controls the pressure P in the vacuum chamber 12. In addition, a valve (not shown) is provided in the middle of the exhaust pipe, and this valve also functions as a pressure control means.
そして、真空槽12内の略中央位置には、容器としてのルツボ16が配置されている。詳しくは、このルツボ16は、一方端が開口され、他方端が閉鎖された概略円筒形のものであり、その開口部を上方に向けた状態で配置されている。なお、当該ルツボ16の外径は、約300mmであり、高さ寸法は、約300mmであり、厚さ寸法(肉厚)は、側壁部および底壁部共に約1mm(数mm)である。また、このルツボ16の素材は、導電性および非磁性を有し、加えて後述するDLC粉末100との密着性の低い高融点材料、例えばモリブデン(Mo)である。勿論、モリブデンに限らず、タンタル(Ta)やタングステン(W)、グラファイト(C)等の他の高融点材料であってもよい。そして、このルツボ16の形状および寸法もまた、状況に応じて適宜に定められればよく、特に形状については、概略円筒形に限らず、枡形や皿形等の開口形状であればよい。 And the crucible 16 as a container is arrange | positioned in the approximate center position in the vacuum chamber 12. FIG. Specifically, the crucible 16 has a substantially cylindrical shape with one end opened and the other end closed, and is arranged with the opening facing upward. The outer diameter of the crucible 16 is about 300 mm, the height dimension is about 300 mm, and the thickness dimension (wall thickness) is about 1 mm (several mm) for both the side wall and the bottom wall. The material of the crucible 16 is a high melting point material, such as molybdenum (Mo), which has conductivity and nonmagnetic properties, and has low adhesion to the DLC powder 100 described later. Of course, other high melting point materials such as tantalum (Ta), tungsten (W), and graphite (C) are not limited to molybdenum. The shape and dimensions of the crucible 16 may be determined as appropriate according to the situation. In particular, the shape is not limited to a substantially cylindrical shape, and may be an opening shape such as a bowl shape or a dish shape.
ルツボ16には、真空槽12の外部に設けられた放電用電力供給手段としてのパルス電源装置18から、放電用電力としての非対称パルス電力Epが供給される。厳密に言えば、真空槽12を陽極とし、ルツボ16を陰極として、これらに当該非対称パルス電力Epが供給される。この非対称パルス電力Epの電圧態様は、ハイレベルの電圧値が+37V固定、ローレベルの電圧値が−37V以下の矩形波であり、その周波数は、パルス電源装置18によって10kHz〜500kHzの範囲で任意に調整可能とされている。また、当該矩形波電圧のデューティ比およびローレベル電圧値も、パルス電源装置18によって任意に調整可能とされており、これらデューティ比およびローレベル電圧値が調整されることで、詳しくはデューティ比が50%以下とされると共に、ローレベル電圧値が−37V〜−2000Vの範囲で調整されることで、当該矩形電圧の平均電圧値(直流換算値)Vpが0V〜−1000Vの範囲で任意に設定可能とされている。 The crucible 16 is supplied with asymmetric pulse power Ep as discharge power from a pulse power supply device 18 as discharge power supply means provided outside the vacuum chamber 12. Strictly speaking, the asymmetric pulse power Ep is supplied to the vacuum chamber 12 as an anode and the crucible 16 as a cathode. The voltage mode of the asymmetric pulse power Ep is a rectangular wave whose high level voltage value is fixed to + 37V and whose low level voltage value is −37V or less, and the frequency is arbitrarily set in the range of 10 kHz to 500 kHz by the pulse power supply device 18. It is possible to adjust to. Also, the duty ratio and low level voltage value of the rectangular wave voltage can be arbitrarily adjusted by the pulse power supply device 18, and the duty ratio can be adjusted in detail by adjusting these duty ratio and low level voltage value. 50% or less, and the low level voltage value is adjusted in the range of -37V to -2000V, so that the average voltage value (DC conversion value) Vp of the rectangular voltage is arbitrarily in the range of 0V to -1000V. It can be set.
加えて、ルツボ16の周囲(側壁および底壁)を取り囲むように、当該ルツボ16よりも一回り大きめの概略円筒形のヒータ20が設けられている。このヒータ20は、真空槽12の外部に設けられた図示しないヒータ加熱用電源からのヒータ加熱用電力の供給によって加熱される。そして、このヒータ20が加熱されることで、ルツボ16の温度、詳しくは当該ルツボ16の内壁の温度が、100℃〜2000℃の範囲で任意に制御される。 In addition, a substantially cylindrical heater 20 that is slightly larger than the crucible 16 is provided so as to surround the periphery (side wall and bottom wall) of the crucible 16. The heater 20 is heated by supplying heater heating power from a heater heating power source (not shown) provided outside the vacuum chamber 12. When the heater 20 is heated, the temperature of the crucible 16, specifically, the temperature of the inner wall of the crucible 16 is arbitrarily controlled in the range of 100 ° C. to 2000 ° C.
さらに、真空槽12の壁部の適宜位置、例えば上壁を貫通するように、ガス導入管22が設けられている。このガス導入管22は、モリブデンまたはタンタル等の高融点金属製であり、絶縁碍子24によって真空槽12と絶縁されている。そして、このガス導入管22の先端、詳しくは真空槽12内側の端部は、ルツボ16の開口部の略中央に位置している。一方、当該ガス導入管22の基端は、真空槽12の外部に設けられた図示しない放電用ガス供給源としてのアルゴン(Ar)ガス供給源と、図示しない材料ガス供給源としてのアセチレンガス供給源とに、結合されている。また、真空槽12の外部に位置するガス導入管22の途中には、当該ガス導入管22内を流れるアルゴンガスおよびアセチレンガスの流量を個別に調整するための図示しない流量調整手段、例えばマスフローコントローラと、当該アルゴンガスおよびアセチレンガスの流通を個別に開閉するための図示しない開閉手段、例えば開閉バルブとが、設けられている。 Further, a gas introduction pipe 22 is provided so as to penetrate an appropriate position of the wall portion of the vacuum chamber 12, for example, the upper wall. The gas introduction pipe 22 is made of a refractory metal such as molybdenum or tantalum, and is insulated from the vacuum chamber 12 by an insulator 24. The tip of the gas introduction tube 22, specifically the end inside the vacuum chamber 12, is located substantially at the center of the opening of the crucible 16. On the other hand, the base end of the gas introduction tube 22 is provided with an argon (Ar) gas supply source as a discharge gas supply source (not shown) provided outside the vacuum chamber 12 and an acetylene gas supply as a material gas supply source (not shown). Combined with the source. Further, in the middle of the gas introduction pipe 22 located outside the vacuum chamber 12, a flow rate adjusting means (not shown) for individually adjusting the flow rates of the argon gas and the acetylene gas flowing in the gas introduction pipe 22, for example, a mass flow controller And an opening / closing means (not shown) such as an opening / closing valve for individually opening / closing the circulation of the argon gas and acetylene gas.
併せて、ガス導入管22には、真空槽12の外部に設けられた直流電力供給手段としてのノズル用電源装置26から、接地電位を基準とする正電位の直流電力Eaが供給される。この直流電力Eaの電圧値Vaは、ノズル用電源装置26によって例えば+10V〜+100Vの範囲で任意に調整可能とされている。 At the same time, positive potential direct current power Ea based on the ground potential is supplied to the gas introduction pipe 22 from a nozzle power supply device 26 as a direct current power supply means provided outside the vacuum chamber 12. The voltage value Va of the DC power Ea can be arbitrarily adjusted in the range of, for example, +10 V to +100 V by the nozzle power supply device 26.
また、真空槽12の外部には、当該真空槽12の上壁および底壁のそれぞれの周縁に沿うように、磁場形成手段としての一対の電磁コイル28および30が設けられている。これらの電磁コイル28および30は、真空槽12の外部に設けられた図示しない磁場形成用電源装置から直流の磁場形成用電力が供給されることによって、真空槽12内の中央に後述するプラズマ200が閉じ込められるように、好ましくはルツボ16内に当該プラズマ200が閉じ込められるように、真空槽12内にいわゆるミラー磁場を形成する。このミラー磁場の強さは、ルツボ16内において1mT〜10mTの範囲で任意に調整可能とされている。 A pair of electromagnetic coils 28 and 30 as magnetic field forming means are provided outside the vacuum chamber 12 along the peripheral edges of the upper wall and the bottom wall of the vacuum chamber 12. These electromagnetic coils 28 and 30 are supplied with a DC magnetic field forming power from a magnetic field forming power supply device (not shown) provided outside the vacuum chamber 12, so that a plasma 200 described later is provided at the center in the vacuum chamber 12. A so-called mirror magnetic field is formed in the vacuum chamber 12 so that the plasma 200 is preferably confined in the crucible 16. The intensity of the mirror magnetic field can be arbitrarily adjusted within the range of 1 mT to 10 mT in the crucible 16.
このように構成されたOLC作製装置10によれば、アセチレンガスを出発原料としてOLCを作製することができる。 According to the OLC manufacturing apparatus 10 configured as described above, an OLC can be manufactured using acetylene gas as a starting material.
具体的には、図2に示すように、まず第1ステップとしてのDLC粉末作製処理が実施される。このDLC粉末作成処理においては、アセチレンガスを材料ガスとするプラズマCVD法によってDLC粉末100が作製される。続いて、第2ステップとしてのDLC−OLC変換処理が実施される。このDLC−OLC変換処理においては、先のDLC粉末作製処理によって作製されたDLC粉末100がアルゴンガス雰囲気中で上述のヒータ20により加熱される。この加熱によって、DLC粉末がOLCに変換され、つまり当該OLCが作製される。なお、図2には示されていないが、第1ステップとしてのDLC粉末作製処理に先立って、前処理としての真空引きが行われる。そして、第2ステップとしての変換処理の後、最終的に完成されたOLCを真空槽12の外部に取り出すための後処理が行われる。 Specifically, as shown in FIG. 2, a DLC powder preparation process as a first step is first performed. In this DLC powder production process, the DLC powder 100 is produced by a plasma CVD method using acetylene gas as a material gas. Subsequently, a DLC-OLC conversion process as a second step is performed. In this DLC-OLC conversion process, the DLC powder 100 produced by the previous DLC powder production process is heated by the heater 20 described above in an argon gas atmosphere. By this heating, the DLC powder is converted into OLC, that is, the OLC is produced. Although not shown in FIG. 2, evacuation is performed as a pretreatment prior to the DLC powder production process as the first step. Then, after the conversion process as the second step, a post-process for taking out the finally completed OLC to the outside of the vacuum chamber 12 is performed.
より具体的には、前処理としての真空引きにおいて、真空槽12内の圧力Pが2×10−3Pa以下となるまで、好ましくは5×10−4Pa以下となるまで、当該真空槽12内が上述の真空ポンプによって排気される。More specifically, in the vacuuming as the pretreatment, the vacuum chamber 12 until the pressure P in the vacuum chamber 12 is 2 × 10 −3 Pa or less, preferably 5 × 10 −4 Pa or less. The inside is evacuated by the vacuum pump described above.
この真空引き後、第1ステップとしてのDLC粉末作製処理が実施される。即ち、ガス導入管22を介して真空槽12内にアルゴンガスが導入される。この状態で、真空槽12を陽極とし、ルツボ16を陰極として、これらにパルス電源装置18から非対称パルス電力Epが供給される。すると、真空槽12内のアルゴンガスが放電して、当該真空槽12内にプラズマ200が発生する。その上で、ガス導入管22を介して真空槽12内にアセチレンガスが導入される。すると、このアセチレンガスは、プラズマ200によって分解されて、当該アセチレンガスの分解粒子である炭素イオンが生成される。そして、この炭素イオンは、陰極であるルツボ16の表面、特に内壁に入射される。これにより、当該ルツボ16の内壁にDLC粉末100が作製される。また、ガス導入管22の先端がルツボ16の開口部の略中央に位置しているので、当該ガス導入管22の先端から噴出されるアセチレンガスが当該ルツボ16内に直接的に導入される。これにより、ルツボ16の内壁へのDLC粉末100の作製効率、例えば作製速度、の向上が図られている。 After this evacuation, a DLC powder production process as a first step is performed. That is, argon gas is introduced into the vacuum chamber 12 through the gas introduction tube 22. In this state, the vacuum chamber 12 is used as an anode, the crucible 16 is used as a cathode, and an asymmetric pulse power Ep is supplied from the pulse power supply device 18 to them. Then, the argon gas in the vacuum chamber 12 is discharged, and plasma 200 is generated in the vacuum chamber 12. Then, acetylene gas is introduced into the vacuum chamber 12 through the gas introduction pipe 22. Then, the acetylene gas is decomposed by the plasma 200, and carbon ions that are decomposition particles of the acetylene gas are generated. And this carbon ion injects into the surface of the crucible 16 which is a cathode, especially an inner wall. Thereby, the DLC powder 100 is produced on the inner wall of the crucible 16. Further, since the distal end of the gas introduction tube 22 is located at the approximate center of the opening of the crucible 16, acetylene gas ejected from the distal end of the gas introduction tube 22 is directly introduced into the crucible 16. Thereby, the production efficiency, for example, the production speed of the DLC powder 100 on the inner wall of the crucible 16 is improved.
なお、DLC粉末100は、次の2つのプロセスが同時進行することによって作製されるものと、推察される。1つめは、ルツボ16の内壁にDLCの被膜が形成されるものの、このDLC被膜が自身の内部応力によってルツボ16の内壁から剥離し、これがDLC粉末100となる。そして、2つめは、プラズマ200によるアセチレンガスの分解粒子である炭素ラジカルや炭素イオンが気相中で再結合して、これがDLC粉末100としてルツボ16の内壁に堆積する。これらの2つのプロセスが同時に進行することによって、DLC粉末100が作製されるものと、推察される。 In addition, it is guessed that DLC powder 100 is produced when the following two processes advance simultaneously. First, although a DLC film is formed on the inner wall of the crucible 16, the DLC film peels off from the inner wall of the crucible 16 due to its internal stress, and this becomes the DLC powder 100. Second, carbon radicals and carbon ions, which are acetylene gas decomposition particles by the plasma 200, are recombined in the gas phase, and this is deposited as DLC powder 100 on the inner wall of the crucible 16. It is inferred that the DLC powder 100 is produced by the simultaneous progress of these two processes.
このDLC粉末作製処理においては、さらに、各電磁コイル28および30に磁場形成用電力が供給される。これにより、真空槽12内に上述のミラー磁場が形成され、ルツボ16内にプラズマ200が閉じ込められる。この結果、プラズマ100の密度が向上し、ルツボ16の内壁へのDLC粉末100の作製速度がより一層向上する。 In the DLC powder production process, magnetic field forming power is further supplied to the electromagnetic coils 28 and 30. As a result, the mirror magnetic field described above is formed in the vacuum chamber 12, and the plasma 200 is confined in the crucible 16. As a result, the density of the plasma 100 is improved, and the production speed of the DLC powder 100 on the inner wall of the crucible 16 is further improved.
加えて、ガス導入管22にノズル用電源装置26から直流電力Eaが供給される。すると、ガス導入管22が言わば第2の陽極として機能するようになり、この第2の電極としてのガス導入管22にプラズマ200内の電子が引き込まれる。この結果、ガス導入管22の周囲、特に当該ガス導入管22の先端付近に、高密度の放電、いわゆるホローアノード放電300が発生する。そして、このホローアノード放電300が発生することによって、アセチレンガスの分解効率が向上し、ひいてはルツボ16の内壁へのDLC粉末100の作製速度が一段と向上する。 In addition, DC power Ea is supplied to the gas introduction pipe 22 from the nozzle power supply device 26. Then, the gas introduction tube 22 functions as a second anode, and electrons in the plasma 200 are drawn into the gas introduction tube 22 as the second electrode. As a result, a high-density discharge, so-called hollow anode discharge 300, is generated around the gas introduction tube 22, particularly in the vicinity of the tip of the gas introduction tube 22. By generating this hollow anode discharge 300, the decomposition efficiency of acetylene gas is improved, and as a result, the production speed of the DLC powder 100 on the inner wall of the crucible 16 is further improved.
また、ガス導入管22が第2の陽極として機能することによって、プラズマ200の安定化も図られる。即ち、プラズマ200は、上述の如く真空槽12を陽極とし、ルツボ16を陰極として、これらに非対称パルス電力Epが供給されることによって発生する。その一方で、当該プラズマ200を利用して作製されるDLC粉末100は、ルツボ16の内壁(表面)のみならず、真空槽12の内壁(表面)にも付着する。このように陽極としての真空槽12と陰極としてのルツボ16との両方の表面にDLC粉末100が付着すると、特に接地電位に維持されることが前提とされる陽極としての真空槽12の表面にDLC粉末100が付着すると、当該真空槽12の電極としての機能が低下し、ひいてはプラズマ200が不安定になる。ここで、ガス導入管22が第2の陽極として機能することで、上述の如く当該第2の陽極としてのガス導入管22にプラズマ200内の電子が引き込まれる。つまり、ガス導入管22がプラズマ200を発生させるための電極としても機能する。これにより、プラズマ200の発生が維持され、当該プラズマ200が安定化される。このようにプラズマ200が安定化されることで、長時間にわたるDLC粉末100の作製処理が可能になり、ひいては当該DLC粉末100の大量作製が可能になり、言い換えれば最終目的物であるOLCの大量作製が可能になる。 In addition, the gas introduction tube 22 functions as a second anode, so that the plasma 200 can be stabilized. That is, the plasma 200 is generated by supplying the asymmetric pulse power Ep to the vacuum chamber 12 as an anode and the crucible 16 as a cathode as described above. On the other hand, the DLC powder 100 produced using the plasma 200 adheres not only to the inner wall (surface) of the crucible 16 but also to the inner wall (surface) of the vacuum chamber 12. Thus, when the DLC powder 100 adheres to the surfaces of both the vacuum chamber 12 as the anode and the crucible 16 as the cathode, the surface of the vacuum chamber 12 as the anode, which is assumed to be maintained at the ground potential, in particular. When the DLC powder 100 adheres, the function as the electrode of the vacuum chamber 12 is lowered, and the plasma 200 becomes unstable. Here, as the gas introduction tube 22 functions as the second anode, as described above, electrons in the plasma 200 are drawn into the gas introduction tube 22 as the second anode. That is, the gas introduction tube 22 also functions as an electrode for generating the plasma 200. Thereby, generation | occurrence | production of the plasma 200 is maintained and the said plasma 200 is stabilized. By stabilizing the plasma 200 in this manner, it becomes possible to manufacture the DLC powder 100 over a long period of time, which in turn makes it possible to manufacture a large amount of the DLC powder 100, in other words, a large amount of OLC that is the final target. Production becomes possible.
さらに、ヒータ20にヒータ加熱用電力が供給されることによって、当該ヒータ20が加熱され、ひいてはルツボ16の内壁の温度、言わばDLC粉末100の作製温度が、制御される。ただし、このDLC粉末100の作製温度が高すぎると、プラズマ200によるアセチレンガスの分解粒子である水素ラジカルや水素イオンがDLC粉末100と反応して、当該DLC粉末100がガス化される。これにより、DLC粉末100の作製速度が低下する恐れがある。図3に、DLC粉末100の作製温度と当該DLC粉末100の作製速度との関係を示す。なお、この図3は、アルゴンガスの流量が50mL/min、アセチレンガスの流量が300mL/min、真空槽12内の圧力Pが3Pa、非対称パルス電力Epの周波数が100kHz、当該非対称パルス電力Epのデューティ比が30%、当該非対称パルス電力Epの平均電圧値Vpが−500V、直流電力Eaの電圧値Vaが+30V、ルツボ16内の磁場が5mTであるときの当該関係の実測結果である。 Furthermore, the heater 20 is supplied with electric power for heating the heater 20 so that the temperature of the inner wall of the crucible 16, that is, the production temperature of the DLC powder 100 is controlled. However, if the production temperature of the DLC powder 100 is too high, hydrogen radicals or hydrogen ions, which are acetylene gas decomposition particles generated by the plasma 200, react with the DLC powder 100, and the DLC powder 100 is gasified. Thereby, there exists a possibility that the preparation speed of DLC powder 100 may fall. FIG. 3 shows the relationship between the production temperature of the DLC powder 100 and the production speed of the DLC powder 100. 3 shows that the flow rate of argon gas is 50 mL / min, the flow rate of acetylene gas is 300 mL / min, the pressure P in the vacuum chamber 12 is 3 Pa, the frequency of the asymmetric pulse power Ep is 100 kHz, and the asymmetric pulse power Ep is This is an actual measurement result of the relationship when the duty ratio is 30%, the average voltage value Vp of the asymmetric pulse power Ep is −500 V, the voltage value Va of the DC power Ea is +30 V, and the magnetic field in the crucible 16 is 5 mT.
この図3から分かるように、DLC粉末100の作製温度が概ね300℃以下であるときは、当該DLC粉末100の作製速度が約8g/hであり、言わば大量生産を実現し得るレベルである。ところが、DLC粉末100の作製温度が300℃を超えると、当該DLC粉末100の作製速度が極端に低下する。特に、DLC粉末100の作製温度が700℃であるときの作製速度は3.4g/hであり、当該作製温度が300℃以下であるときの半分以下である。従って、DLC粉末100の作製温度は300℃以下、好ましくは100℃〜300℃の範囲内に制御されるのが、肝要である。 As can be seen from FIG. 3, when the production temperature of the DLC powder 100 is approximately 300 ° C. or less, the production speed of the DLC powder 100 is about 8 g / h, which is a level at which mass production can be realized. However, when the production temperature of the DLC powder 100 exceeds 300 ° C., the production speed of the DLC powder 100 is extremely reduced. In particular, the production speed when the production temperature of the DLC powder 100 is 700 ° C. is 3.4 g / h, which is less than half that when the production temperature is 300 ° C. or less. Therefore, it is important that the production temperature of the DLC powder 100 is controlled to 300 ° C. or less, preferably within the range of 100 ° C. to 300 ° C.
このような要領で第1ステップとしてのDLC粉末作製処理が実施された後、続いて、第2ステップとしてのDLC−OLC変換処理が実施される。即ち、各電磁コイル28および30への磁場形成用電力の供給が停止される。併せて、ガス導入管22への直流電力Eaの供給が停止されると共に、ルツボ16への非対称パルス電力Epの供給が停止される。さらに、ガス導入管22を介しての真空槽12内へのアルゴンガスおよびアセチレンガスの導入が停止される。なお、ヒータ20へのヒータ加熱用電力の供給は、そのままでもよいし、停止されてもよい。その上で、真空槽12内が改めて真空引きされる。 After the DLC powder production process as the first step is performed in such a manner, the DLC-OLC conversion process as the second step is subsequently performed. That is, the supply of magnetic field forming power to the electromagnetic coils 28 and 30 is stopped. At the same time, the supply of the DC power Ea to the gas introduction pipe 22 is stopped, and the supply of the asymmetric pulse power Ep to the crucible 16 is stopped. Further, the introduction of argon gas and acetylene gas into the vacuum chamber 12 through the gas introduction pipe 22 is stopped. The supply of the heater heating power to the heater 20 may be as it is or may be stopped. Then, the vacuum chamber 12 is evacuated again.
この改めての真空引き後、ガス導入管22を介して真空槽12内にアルゴンガスのみが導入される。そして、このアルゴンガスの導入によって、真空槽12内が当該アルゴンガス雰囲気とされる。このときの真空槽12内の圧力Pは、例えば10Paとされる。この状態で、ヒータ20によって、ルツボ16の内壁の温度が1600℃に加熱される。これにより、ルツボ16内のDLC粉末100が、OLCに変換される。このDLC−OLC変換処理は、例えば30分間にわたって行われる。そして、このDLC−OLC変換処理の後、完成されたOLCを真空槽12の外部に取り出すための後処理が行われる。 After this evacuation, only argon gas is introduced into the vacuum chamber 12 through the gas introduction tube 22. And the inside of the vacuum chamber 12 is made into the said argon gas atmosphere by introduction | transduction of this argon gas. At this time, the pressure P in the vacuum chamber 12 is, for example, 10 Pa. In this state, the temperature of the inner wall of the crucible 16 is heated to 1600 ° C. by the heater 20. Thereby, the DLC powder 100 in the crucible 16 is converted into OLC. This DLC-OLC conversion process is performed over, for example, 30 minutes. Then, after the DLC-OLC conversion process, a post process for taking out the completed OLC to the outside of the vacuum chamber 12 is performed.
即ち、後処理として、ヒータ20へのヒータ加熱用電力の供給が停止される。併せて、ガス導入管22を介しての真空槽12内へのアルゴンガスの供給が停止される。さらに、真空槽12内の圧力Pが徐々に大気圧と同程度に戻される。そして、適当な時間、例えば10分間〜30分間の、冷却期間が置かれる。その上で、真空槽12内が大気に開放されて、当該真空槽12内からOLCがルツボ16ごと取り出される。これをもって、後処理とし、当該後処理を含む一連のOLC作製処理が終了する。なお、ルツボ16ごと取り出されたOLCは、ブラシ等の適用な回収手段によって回収される。 That is, as post-processing, the supply of heater heating power to the heater 20 is stopped. At the same time, the supply of argon gas into the vacuum chamber 12 through the gas introduction tube 22 is stopped. Further, the pressure P in the vacuum chamber 12 is gradually returned to the same level as the atmospheric pressure. Then, a cooling period is set for an appropriate time, for example, 10 minutes to 30 minutes. Then, the inside of the vacuum chamber 12 is opened to the atmosphere, and the OLC is taken out from the vacuum chamber 12 together with the crucible 16. This is post-processing, and a series of OLC manufacturing processes including the post-processing is completed. The OLC taken out together with the crucible 16 is recovered by an applicable recovery means such as a brush.
このような要領で作製されたOLCを透過形電子顕微鏡(Transmission
Electron Microscope;TEM)で観察したところ、図4に示すような画像が得られた。この図4において、白の破線丸印で囲まれた部分がOLCを示す。即ち、この図4から、OLCの存在が認められる。なお、この図4に示すOLCは、その直前原料としてのDLC粉末100が作製される際に(つまり第1ステップとしてのDLC粉末作製処理において)、当該DLC粉末100の作製温度が200℃とされた以外は、上述の図3に係るのと同じ条件とされたものである。The OLC produced in this way is transmitted using a transmission electron microscope (Transmission
When observed with an electron microscope (TEM), an image as shown in FIG. 4 was obtained. In FIG. 4, a portion surrounded by a white broken circle indicates an OLC. That is, from FIG. 4, the existence of OLC is recognized. In the OLC shown in FIG. 4, when the DLC powder 100 as a raw material just before the OLC is produced (that is, in the DLC powder production process as the first step), the production temperature of the DLC powder 100 is 200 ° C. Otherwise, the conditions are the same as those in FIG. 3 described above.
ここで、OLCの直前原料であるDLC粉末100についても、透過形電子顕微鏡で観察したところ、図5に示すような画像が得られた。この図5において、白の破線丸印で囲まれた部分にOLCの存在が認められる。つまり、この図5から、DLC粉末100中にも僅かながらOLCが作製されていることが確認された。言い換えれば、このDLC粉末100が1600℃で加熱されることによって(つまり第2ステップとしてのDLC−OLC変換処理が実施されることによって)、当該DLC粉末100が確実にOLCに変換されることが確認された。 Here, when the DLC powder 100 which is the raw material immediately before the OLC was also observed with a transmission electron microscope, an image as shown in FIG. 5 was obtained. In FIG. 5, the presence of OLC is recognized in a portion surrounded by a white broken-line circle. That is, from FIG. 5, it was confirmed that a small amount of OLC was also produced in the DLC powder 100. In other words, when the DLC powder 100 is heated at 1600 ° C. (that is, by performing the DLC-OLC conversion process as the second step), the DLC powder 100 can be reliably converted to OLC. confirmed.
さらに、OLCについて、X線回折(X-Ray Diffraction;XRD)分析を行った。その結果を、図6に示す。なお、この図6において、実線の曲線L1が、当該OLCの分析結果を示す。他の曲線L2〜L5は、比較対照物質の分析結果である。詳しくは、一点鎖線の曲線L2は、第2ステップとしてのDLC−OLC変換処理において、DLC粉末100を1000℃で加熱することによって得られたOLCの分析結果を示す。そして、二点鎖線の曲線L3は、OLCの直前原料であるDLC粉末100の分析結果を示す。さらに、長破線の曲線L4は、上述した従来技術における出発原料であるDNPの分析結果を示す。そして、短破線の曲線L5は、当該従来技術においてDNPを1600℃で加熱することによって作製されたOLCの分析結果を示す。 Further, X-ray diffraction (XRD) analysis was performed on the OLC. The result is shown in FIG. In FIG. 6, a solid curve L1 indicates the analysis result of the OLC. The other curves L2 to L5 are the analysis results of the comparative control substances. Specifically, the alternate long and short dash line curve L2 shows the analysis result of the OLC obtained by heating the DLC powder 100 at 1000 ° C. in the DLC-OLC conversion process as the second step. A two-dot chain line curve L3 shows an analysis result of the DLC powder 100 which is a raw material immediately before the OLC. Further, a long dashed curve L4 shows the analysis result of DNP, which is a starting material in the above-described prior art. A short dashed curve L5 shows an analysis result of OLC produced by heating DNP at 1600 ° C. in the related art.
この図6から分かるように、いずれの曲線L1〜L5においても、43度付近の角度にピークが見られる。この43度付近のピークは、ダイヤモンド成分の存在を意味する。そして、DNPの分析結果を示す曲線(長破線)L4以外の曲線L1〜L3およびL5においては、26度付近にもピークが見られる。特に、本実施形態によるOLCの分析結果を示す曲線(実線)L1と、従来技術によるOLCの分析結果を示す曲線(短破線)L5とに、注目すると、これらの曲線L1およびL5における当該26度付近のピークは顕著である。これはまさに、OLCの存在を意味する。即ち、このX線回折分析の結果からも、本実施形態によってOLCが作製されることが認められる。 As can be seen from FIG. 6, in any of the curves L1 to L5, a peak is seen at an angle near 43 degrees. This peak around 43 degrees means the presence of a diamond component. And in curves L1-L3 and L5 other than the curve (long broken line) L4 which shows the analysis result of DNP, a peak is seen also at 26 degree vicinity. In particular, paying attention to the curve (solid line) L1 indicating the analysis result of the OLC according to the present embodiment and the curve (short dashed line) L5 indicating the analysis result of the OLC according to the conventional technique, the 26 degrees in these curves L1 and L5 Nearby peaks are prominent. This is exactly the presence of OLC. That is, it is recognized from the result of the X-ray diffraction analysis that the OLC is produced according to this embodiment.
なお、DLC粉末100を1000℃で加熱することによって得られたOLCの分析結果を示す曲線(一点鎖線)L2においては、本実施形態によるOLCの分析結果を示す曲線(実線)L1と比較して、26度付近のピークが小さい。これは、DLC粉末100を1000℃で加熱することによっても当該DLC粉末100をOLCに変換することはできるものの、その変換効率が低いこと、言い換えれば1000℃という加熱温度ではDLC粉末100をOLCに確実に変換し得ないこと(つまり当該加熱温度が不足していること)を、意味する。また、DLC粉末100の分析結果を示す曲線(二点鎖線)L3においても、僅かながら26度付近にピークがあるのは、図5を参照しながら説明したように、当該DLC粉末100中に僅かながらOLCが存在していることを意味する。DNPの分析結果を示す曲線(長破線)L4において、26度付近のピークが見られないのは、当該DNP中にOLCが存在しないからである。 In addition, in curve (solid line) L2 which shows the analysis result of OLC obtained by heating DLC powder 100 at 1000 ° C compared with curve (solid line) L1 which shows the analysis result of OLC by this embodiment The peak around 26 degrees is small. Although the DLC powder 100 can be converted to OLC by heating the DLC powder 100 at 1000 ° C., the conversion efficiency is low. In other words, at a heating temperature of 1000 ° C., the DLC powder 100 is converted to OLC. It means that it cannot be reliably converted (that is, the heating temperature is insufficient). Also, in the curve (two-dot chain line) L3 indicating the analysis result of the DLC powder 100, there is a slight peak near 26 degrees, as described with reference to FIG. This means that OLC is present. The reason why the peak near 26 degrees is not observed in the curve (long broken line) L4 indicating the analysis result of DNP is because there is no OLC in the DNP.
加えて、本実施形態によるOLCについて、ラマン分光分析を行った。その結果を、図7に示す。なお、この図7において、実線の曲線L11が、当該OLCの分析結果を示す。他の曲線L12および13は、比較対照物質の分析結果である。詳しくは、一点鎖線の曲線L12は、第2ステップとしてのDLC−OLC変換処理において、DLC粉末100を1000℃で加熱することによって得られたOLCの分析結果を示す。そして、短破線の曲線L13は、従来技術においてDNPを1600℃で加熱することによって作製されたOLCの分析結果を示す。 In addition, Raman spectroscopic analysis was performed on the OLC according to the present embodiment. The result is shown in FIG. In FIG. 7, a solid curve L11 indicates the analysis result of the OLC. The other curves L12 and L13 are the results of analysis of comparative control substances. Specifically, a dashed-dotted line curve L12 shows an analysis result of OLC obtained by heating the DLC powder 100 at 1000 ° C. in the DLC-OLC conversion process as the second step. A short dashed curve L13 shows an analysis result of the OLC produced by heating DNP at 1600 ° C. in the prior art.
この図7から分かるように、いずれの曲線L11〜L3についても、ラマンシフトが1340cm−1付近のいわゆるDバンドと、1580cm−1付近のいわゆるGバンドとが、一致している。特に、本実施形態によるOLCの分析結果を示す曲線(実線)L11と、従来技術によるOLCの分析結果を示す曲線(短破線)L13とに、注目すると、これらの曲線L11およびL13は当該DバンドおよびGバンドを含め全般的に一致している。これもまた、OLCの存在を意味する。なお、DLC粉末100を1000℃で加熱することによって得られたOLCの分析結果を示す曲線(一点鎖線)L12については、他の曲線L11およびL13と比較して、多少のずれがある。これもまた、1000℃という加熱温度ではDLC粉末100をOLCに確実に変換し得ないことを、意味する。As it can be seen from FIG. 7, for any of the curves L11~L3, Raman shift and a so-called D band near 1340 cm -1, and the so-called G band near 1580 cm -1, consistent. In particular, when attention is paid to a curve (solid line) L11 indicating an OLC analysis result according to the present embodiment and a curve (short broken line) L13 indicating an OLC analysis result according to the conventional technique, these curves L11 and L13 indicate the D band. And the G band in general. This also means the presence of OLC. In addition, about curve (dot-dash line) L12 which shows the analysis result of OLC obtained by heating DLC powder 100 at 1000 degreeC, there is some deviation compared with other curves L11 and L13. This also means that DLC powder 100 cannot be reliably converted to OLC at a heating temperature of 1000 ° C.
以上のように、本実施形態によれば、アセチレンガスを出発原料としてOLCを作製することができる。アセチレンガスは、上述の従来技術における出発原料としてのDNPに比べて、極めて安価である。従って、本実施形態によれば、従来技術に比べて、極めて安価にOLCを作製することができる。 As described above, according to this embodiment, an OLC can be produced using acetylene gas as a starting material. Acetylene gas is extremely cheap compared to DNP as a starting material in the above-described prior art. Therefore, according to the present embodiment, it is possible to produce an OLC at an extremely low cost as compared with the conventional technique.
なお、本実施形態において、出発原料としてアセチレンガスが採用されたが、これに限らない。メタンガスやエチレンガス,ベンゼンガス等の他の炭化水素系ガスが採用されてもよい。また、アルコールから気化された炭化水素系ガスが採用されてもよい。ただし、メタンガスについては、アセチレンガスよりもDLC粉末100の作製速度が遅いこと、詳しくは当該アセチレンガスが採用された場合の1/5程度の作製速度しか得られないことが、実験により確認された。このことは、エチレンガスについても、同様である。そして、ベンゼンガスについては、当該ベンゼンが元々液体であるため、これを気化する必要があり、その分、気化設備を含めコストが掛かる。加えて、ベンゼンガスが採用された場合は、これが真空ポンプ中で再液化する恐れがあり、そうなると、当該真空ポンプによる排気効率が低下する。その上、ベンゼンガスは、毒性および発がん性を有するので、その弊害が大きい。アルコールもまた、液体であるので、その気化設備を含めコストが掛かる。これらを総合すると、DLC粉末100の作製速度、コスト、取り扱い易さ、調達容易性、安全性等の観点から、出発原料としてはアセチレンガスが最も好適である。 In this embodiment, acetylene gas is used as a starting material, but the present invention is not limited to this. Other hydrocarbon gases such as methane gas, ethylene gas, and benzene gas may be employed. Moreover, the hydrocarbon gas vaporized from alcohol may be employ | adopted. However, for methane gas, it was confirmed by experiments that the production speed of the DLC powder 100 is slower than that of acetylene gas, and specifically, only about 1/5 of the production speed when the acetylene gas is employed can be obtained. . The same applies to ethylene gas. As for benzene gas, since the benzene is originally liquid, it is necessary to vaporize the benzene gas. In addition, when benzene gas is employed, it may be liquefied again in the vacuum pump, and the exhaust efficiency of the vacuum pump is reduced. Moreover, since benzene gas has toxicity and carcinogenicity, its harmful effect is great. Since alcohol is also a liquid, the cost including its vaporization equipment is high. Overall, acetylene gas is the most suitable starting material from the viewpoints of the production speed, cost, ease of handling, ease of procurement, safety, etc. of the DLC powder 100.
また、第1ステップとしてのDLC粉末作製処理においては、放電用電力として非対称パルス電力Epが採用されたが、これに代えて、例えば周波数が13.56MHzの正弦波の高周波電力が採用されてもよい。いずれにしても、チャージアップを防止するために、当該放電用電力として交流電力が採用されることが、肝要である。ただし、高周波電力が採用される場合には、その供給源である放電用電力供給手段としての高周波電源装置と、ルツボ16を含む負荷側と、の間のインピーダンス整合を取るためのインピーダンス整合器が必要になるため、その分、当該インピーダンス整合器を含む装置全体の構成が複雑化しかつ高コスト化する。また、上述したように、非対称パルス電力Epは、その周波数やデューティ比、平均電圧値Vpが調整可能とされているので、高周波電力よりも柔軟性が高く、様々な状況に対処し易い。従って、放電用電力としては、非対称パルス電力Epの方が、高周波電力よりも好適である。 Further, in the DLC powder manufacturing process as the first step, the asymmetric pulse power Ep is adopted as the discharge power, but instead, for example, a sine wave high frequency power having a frequency of 13.56 MHz is adopted. Good. In any case, in order to prevent charge-up, it is important that AC power is adopted as the discharging power. However, when high-frequency power is employed, an impedance matching unit for impedance matching between the high-frequency power supply device serving as the power supply means for discharging and the load side including the crucible 16 is provided. Therefore, the configuration of the entire apparatus including the impedance matching unit becomes complicated and the cost increases accordingly. Further, as described above, since the frequency, duty ratio, and average voltage value Vp of the asymmetric pulse power Ep can be adjusted, the asymmetric pulse power Ep is more flexible than the high-frequency power and can easily cope with various situations. Therefore, as the discharge power, the asymmetric pulse power Ep is more preferable than the high frequency power.
加えて、プラズマ200の励起法として、いわゆる自己放電型(または「冷陰極型」とも言う。)の励起法が採用されたが、これに限らない。即ち、高周波プラズマCVD法やマイクロ波プラズマCVD法、ECR(Electron Cyclotron Resonance)プラズマCVD法、熱陰極PIG(Penning Ionization Gauge)プラズマCVD法等の他の励起法が採用されてもよい。 In addition, as a method for exciting the plasma 200, a so-called self-discharge type (or “cold cathode type”) excitation method is employed, but the present invention is not limited thereto. That is, other excitation methods such as a high-frequency plasma CVD method, a microwave plasma CVD method, an ECR (Electron Cyclotron Resonance) plasma CVD method, and a hot cathode PIG (Penning Ionization Gauge) plasma CVD method may be employed.
そして、第2ステップとしてのDLC−OLC変換処理においては、ヒータ20によってDLC粉末100を加熱するという、いわゆるヒータ加熱法が採用されたが、これに限らない。即ち、赤外線ランプ加熱法や高周波誘導加熱法、電子ビーム照射加熱法、プラズマ加熱法等の、他の加熱法が採用されてもよい。いずれにしても、DLC粉末100を700℃〜2000℃に加熱できること、好ましくは1600℃〜2000℃に加熱できることが、肝要である。なお、上述の説明では省略したが、少なくとも700℃以上の加熱温度であれば、DLC粉末100をOLCに変換できることが、実験によって確認された。ただし、上述したように、当該加熱温度が高いほど、DLC粉末100からOLCへの変換効率が向上する。また、加熱時間(つまりDLC−OLC変換処理の継続時間)は、変換効率には大きく影響せず、概ね20分間以上であれば、(加熱温度に応じた)一定の変換効率が得られることが、実験によって確認された。 In the DLC-OLC conversion process as the second step, a so-called heater heating method in which the DLC powder 100 is heated by the heater 20 is employed, but the present invention is not limited to this. That is, other heating methods such as an infrared lamp heating method, a high frequency induction heating method, an electron beam irradiation heating method, and a plasma heating method may be employed. In any case, it is important that the DLC powder 100 can be heated to 700 ° C to 2000 ° C, preferably 1600 ° C to 2000 ° C. Although omitted in the above description, it has been confirmed by experiments that the DLC powder 100 can be converted to OLC at a heating temperature of 700 ° C. or higher. However, as described above, the conversion efficiency from the DLC powder 100 to the OLC is improved as the heating temperature is higher. In addition, the heating time (that is, the duration of the DLC-OLC conversion process) does not greatly affect the conversion efficiency, and a constant conversion efficiency (depending on the heating temperature) can be obtained if it is approximately 20 minutes or longer. Confirmed by experiments.
さらに、この第2ステップとしてのDLC−OLC変換処理においては、真空槽12内がアルゴンガス雰囲気とされたが、これに限らない。例えば、ネオン(Ne)ガスやキセノン(Xe)ガス等の他の不活性ガスによる雰囲気とされてもよい。また、不活性ガス雰囲気中ではなく、真空中で、当該DLC−OLC変換処理が実施されてもよい。 Furthermore, in the DLC-OLC conversion process as the second step, the inside of the vacuum chamber 12 is an argon gas atmosphere, but the present invention is not limited to this. For example, the atmosphere may be other inert gas such as neon (Ne) gas or xenon (Xe) gas. Further, the DLC-OLC conversion process may be performed in a vacuum, not in an inert gas atmosphere.
そして、上述の第1ステップとしてのDLC粉末作製処理においても、放電用ガスとして、アルゴンガスではなく、ネオンガスやキセノンガス等の他の不活性ガスが採用されてもよい。 In the DLC powder production process as the first step described above, other inert gas such as neon gas or xenon gas may be employed as the discharge gas instead of argon gas.
また、第1ステップとしてのDLC粉末作製処理と、第2ステップとしてのDLC−OLC変換処理とは、別々の装置によって実施されてもよい。即ち、DLC粉末作製処理を実施するための装置と、DLC−OLC変換処理を実施するための装置とが、別々に設けられており、DLC粉末作製処理装置によって作製されたDLC粉末100が、DLC−OLC変換処理装置に移され、ここでOLCに変換されてもよい。さらに、これらDLC粉末作製処理とDLC−OLC変換処理とが、いわゆるインライン方式によって連続的に実施されるようにしてもよい。 Moreover, the DLC powder preparation process as a 1st step and the DLC-OLC conversion process as a 2nd step may be implemented by a separate apparatus. That is, an apparatus for performing the DLC powder preparation process and an apparatus for performing the DLC-OLC conversion process are provided separately, and the DLC powder 100 manufactured by the DLC powder preparation processing apparatus is the DLC powder. -Moved to OLC conversion processor, where it may be converted to OLC. Further, the DLC powder preparation process and the DLC-OLC conversion process may be continuously performed by a so-called in-line method.
Claims (12)
上記DLC粉末作成過程において作製された上記DLC粉末を真空中または不活性ガス雰囲気中で加熱することによって該DLC粉末をオニオンライクカーボンに変換する変換過程と、
を具備する、オニオンライクカーボンの作製方法。DLC powder production process for producing DLC powder by plasma CVD method using hydrocarbon gas as material gas,
A conversion process of converting the DLC powder into onion-like carbon by heating the DLC powder produced in the DLC powder production process in a vacuum or in an inert gas atmosphere;
A method for producing onion-like carbon.
請求項1に記載のオニオンライクカーボンの作製方法。The hydrocarbon gas is acetylene gas.
A method for producing onion-like carbon according to claim 1.
基準電位に接続された真空槽と該真空槽内に設置された開口形状の容器とを一対の電極として該真空槽と該容器とに交流の放電用電力を供給することによって該容器内を含む該真空槽内にプラズマを発生させるプラズマ発生過程と、
上記真空槽内に上記炭化水素系ガスを導入するガス導入過程と、
上記容器内の温度が300℃よりも高くならないように該容器内の温度を制御する温度制御過程と、
を含む、
請求項1または2に記載のオニオンライクカーボンの作製方法。The DLC powder preparation process is as follows:
The inside of the container is included by supplying AC discharge power to the vacuum tank and the container using a vacuum tank connected to a reference potential and an opening-shaped container installed in the vacuum tank as a pair of electrodes. A plasma generation process for generating plasma in the vacuum chamber;
A gas introduction process for introducing the hydrocarbon-based gas into the vacuum chamber;
A temperature control process for controlling the temperature in the container so that the temperature in the container does not become higher than 300 ° C .;
including,
A method for producing onion-like carbon according to claim 1 or 2.
上記DLC粉末作製過程は上記ガス導入管に対して上記基準電位を基準とする正電位の直流電力を供給する直流電力供給過程をさらに含む、
請求項3に記載のオニオンライクカーボンの作製方法。In the gas introduction process, the hydrocarbon gas is introduced into the vacuum tank through a gas introduction pipe insulated from the vacuum tank, and the hydrocarbon system is introduced into the vacuum tank of the gas introduction pipe. A gas outlet is located in the vicinity of the opening of the container,
The DLC powder preparation process further includes a DC power supply process for supplying a positive potential DC power with respect to the reference potential to the gas introduction pipe.
A method for producing onion-like carbon according to claim 3.
請求項3または4に記載のオニオンライクカーボンの作成方法。The DLC powder preparation process further includes a magnetic field forming process for forming a magnetic field for confining the plasma in the container in the vacuum chamber.
A method for producing onion-like carbon according to claim 3 or 4.
上記真空槽内を上記真空または上記不活性ガス雰囲気とする変換環境形成過程と、
上記真空または上記不活性ガス雰囲気とされた上記真空槽内において上記DLC粉末を700℃〜2000℃で加熱する加熱過程と、
を含む、
請求項3ないし5のいずれかに記載のオニオンライクカーボンの作製方法。The above conversion process is
A conversion environment forming process in which the inside of the vacuum chamber is the vacuum or the inert gas atmosphere;
A heating process in which the DLC powder is heated at 700 ° C. to 2000 ° C. in the vacuum chamber in the vacuum or the inert gas atmosphere;
including,
A method for producing onion-like carbon according to any one of claims 3 to 5.
上記DLC粉末作製手段によって作製された上記DLC粉末を真空中または不活性ガス雰囲気中で加熱することによって該DLC粉末をオニオンライクカーボンに変換する変換手段と、
を具備する、オニオンライクカーボンの作製装置。DLC powder production means for producing DLC powder by a plasma CVD method using a hydrocarbon-based gas as a material gas;
Conversion means for converting the DLC powder into onion-like carbon by heating the DLC powder produced by the DLC powder production means in a vacuum or in an inert gas atmosphere;
A device for producing onion-like carbon.
請求項7に記載のオニオンライクカーボンの作製装置。The hydrocarbon gas is acetylene gas.
The onion-like carbon producing apparatus according to claim 7.
上記真空槽内に設置された開口形状の容器と、
を具備し、
上記DLC粉末作製手段は、
上記真空槽と上記容器とを一対の電極として該真空槽と該容器とに交流の放電用電力を供給することによって該容器内を含む該真空槽内にプラズマを発生させるプラズマ発生手段と、
上記真空槽内に上記炭化水素系ガスを導入するガス導入手段と、
上記容器内の温度が300℃よりも高くならないように該容器内の温度を制御する温度制御手段と、
を含む、
請求項7または8に記載のオニオンライクカーボンの作製装置。A vacuum chamber connected to a reference potential;
An opening-shaped container installed in the vacuum chamber;
Comprising
The DLC powder preparation means is:
Plasma generating means for generating plasma in the vacuum chamber including the inside of the vessel by supplying AC discharge power to the vacuum vessel and the vessel using the vacuum vessel and the vessel as a pair of electrodes,
Gas introduction means for introducing the hydrocarbon-based gas into the vacuum chamber;
Temperature control means for controlling the temperature in the container so that the temperature in the container does not become higher than 300 ° C .;
including,
The device for producing onion-like carbon according to claim 7 or 8.
上記炭化水素系ガスは上記ガス導入管を介して上記真空槽内に導入され、
上記ガス導入管は上記真空槽内への上記炭化水素系ガスの噴出口を上記容器の開口部の近傍に位置させるように設けられ、
上記DLC粉末作製手段は上記ガス導入管に対して上記基準電位を基準とする正電位の直流電力を供給する直流電力供給手段をさらに含む、
請求項9に記載のオニオンライクカーボンの作製装置。The gas introduction means includes a gas introduction pipe that is insulated from the vacuum chamber,
The hydrocarbon-based gas is introduced into the vacuum chamber through the gas introduction pipe,
The gas introduction pipe is provided so as to position the outlet of the hydrocarbon-based gas into the vacuum chamber in the vicinity of the opening of the container,
The DLC powder preparation means further includes a DC power supply means for supplying a positive potential DC power based on the reference potential to the gas introduction pipe,
The onion-like carbon producing apparatus according to claim 9.
請求項9または10に記載のオニオンライクカーボンの作製装置。The DLC powder preparation means further includes a magnetic field forming means for forming a magnetic field for confining the plasma in the container in the vacuum chamber.
The onion-like carbon production apparatus according to claim 9 or 10.
上記真空槽内を上記真空または上記不活性ガス雰囲気とする変換環境形成手段と、
上記真空または上記不活性ガス雰囲気とされた上記真空槽内において上記DLC粉末を700℃〜2000℃で加熱する加熱手段と、
を含む、
請求項9ないし11のいずれかに記載のオニオンライクカーボンの作製装置。The conversion means is
A conversion environment forming means for setting the inside of the vacuum chamber to the vacuum or the inert gas atmosphere;
Heating means for heating the DLC powder at 700 ° C. to 2000 ° C. in the vacuum chamber in the vacuum or the inert gas atmosphere;
including,
The device for producing onion-like carbon according to any one of claims 9 to 11.
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US10920035B2 (en) | 2017-03-16 | 2021-02-16 | Lyten, Inc. | Tuning deformation hysteresis in tires using graphene |
WO2018169889A1 (en) | 2017-03-16 | 2018-09-20 | Lyten, Inc. | Carbon and elastomer integration |
US9862606B1 (en) | 2017-03-27 | 2018-01-09 | Lyten, Inc. | Carbon allotropes |
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