1321810 九、發明說明： 【發明所屬之技術領域】 本發明係關於-種藉助錄频鱗沈_默方法及裝置，尤指一種夢助 微波電漿增強賤射形成薄膜之方法及設備。 曰1321810 IX. Description of the Invention: [Technical Field] The present invention relates to a method and apparatus for forming a film by means of a video recording and scaling method, in particular, a dream assisting microwave plasma enhanced sputtering.曰
【先前技術J 電毅(piasma)被稱為“物質第四態”，係由各種可流動之帶電粒子構成之體 糸。目前，人為產生之電漿主要係通過氣體放電方法得到，主要由電子、離子、 中錄子絲m喊。歸顺職驗發產[獨於聽之熱能活 化’故，可利用電漿降低聽盈度，可稱為低溫電·術。低溫電聚技術已在材 料、微電子、化工、機械及環保等衆多學科領域中得到廣泛應用，並已初步形成 電業Μ。其麵細包括：在娜學射，湖電魏械積技術以 及化學_嫌技術合成功能薄膜材料；在微電子工業中，採用電漿雕技術對 超大型積體電路進行加工；在化工學科中，採用電毁聚合技術，可以製備出一此 高分子薄膜材料。 = 低溫電漿紅方虹制轉絲紐，可分為直流輝絲電师⑽[Prior Art J piasma is called the "material fourth state" and is composed of various flowable charged particles. At present, the artificially produced plasma is mainly obtained by the gas discharge method, and is mainly called by electrons, ions, and medium-recording wires. Returning to the job inspection and production [individually listening to the heat energy activation], you can use the plasma to reduce the listening intensity, which can be called low temperature electricity. Low-temperature electropolymerization technology has been widely used in many subject areas such as materials, microelectronics, chemicals, machinery and environmental protection, and has initially formed a power industry. The surface details include: in Na Xueyin, Hudian Weizhiji Technology and Chemical_Synthetic Technology Synthetic Functional Thin Film Materials; in the microelectronics industry, using plasma engraving technology to process ultra-large integrated circuits; A polymer film material can be prepared by using electro-destruction polymerization technology. = Low temperature plasma red square rainbow wire, can be divided into DC wire electrician (10)
CurrentCurrent
Gbw Charge)、射頻放電阳咖而哪㈣G1〇w Discharge)、以及微波放電 (Microwave Discharge)等幾種。典型直流輝絲電法係在一密封^英玻璃甲充 滿待要放電^氣體，氣壓約爲αι〜職σ吵並插人二金屬電極。當管内氣壓 處於上述氣壓顔某-固定值’且當魏職高於驗之擊穿電麟，氣體開始 電離，形成輝級電，絲電法之優點在於設備結構簡單，造價較低。惟，^ 缺點係電缝低，電極容毅職巾帶雜子絲，餅f極使轉命減少，並 且從電極濺射出來之原子會對電缝生污染。射嫩電法—般係採用頻率為 13.56MHz之棚放電產生W，這·法可產錄純权鎌，刺於化學氣 相沈積法製備薄膜。微波放電係將微波能量轉換為氣體之内能，使之激發、電離 形成電方法，财翻麟管献翁财電·纟讀_合至放電 管内，管内氣體之少—始電子被微波電場加速，與氣體分子發生非彈性碰撞並 使之獲得絲度鎌’故’其制細較前勒歡法饰乏。 一微波電子喊共振(Ε1_η Cyd_n Res()nance，砂)裝置係一翻於獲得 高密度《之微波放電賴產生設備，其利職波州㈣挪)之高辭振^來 5 1321810 增加離子與原子團在電漿内之濃度。 如第一圖所7F，1985年1月8日公告之美國專利第4,492,620號揭示一種微 波ECR電漿沈積設備以及沈積方法。其中，該設備包括放電室丄及工作室2 ; • 微，源係一磁電管(magnetronX圖未示），其產生頻率為245GHz之微波，通過波 導& 4傳輸並透過石英窗口 3進入放電室J内；另外，相對該石英窗口 3設置有 - 電毁導出口 5，用以將電聚流6導出至基底7 ;工作室2與一真空系統相連，藉 此控制工作室2之氣驗力。磁_ 1G環繞獄電室丨以在敝電室！内產^ 足夠磁場強度使其内可以形成電子回旋共振取和，因為微波頻率為 2.45GHz， 故放電至1内應當形成磁通量為875高斯(G)之磁場。此外，該磁線圈ι〇形成 • 之磁场還可擴展至工作室2，形成辦欠磁場(DivergingMagneticField)，其磁場強 度由電料出σ 5至基底7逐漸減弱。這樣’放電$ :内產生之躲即可由該擴 ,散磁場之作用而導出至工作室2。氣體供應系統12及13分別供應不同反應氣體 • 至放電室1及工作室2。為冷卻放電室1，分別設置進水管14及出水口管15以 提供循環冷卻水。由待濺射材料組成之環狀濺射靶16設置於工作室内電漿導出 口 5附近，並罪近或與電漿流6相接觸。該錢射乾16附著於一陰極17上，其他 未面向電漿流6之周圍被保護電極18包圍。該陰極17與直流電源相連。該專利 利用微波ECR電漿沈積設備及方法可於較低溫度下實現金屬或金屬化合物之薄 膜沈積，惟，由於受激離子能量受限，大多情況下形成非晶態薄膜，很難實現多 晶或早晶薄膜沈積。 _ 2004年1月I3日公告之美國專利第的77，^號揭露一種微波增強化學氣 相沈積裝置及方法。其利用微波電子回旋共振獲得電聚，並採用電聚增強化學氣 相沈積法可翻多晶或單晶態之薄膜，例如金剛石膜或類金剛石膜。惟，採用化 學氣相沈積法需將原料以氣體形式（如甲烧，乙稀等含碳氣體）輸送至電聚幻^ 室’故:其原料來:原受到限制；另外，大多金屬元素係以固態化合物形式存在， 並非氣L因而這種裝置之應用範圍僅關^石夕、碳元素之薄膜沈積，難以適用 於其炫金屬。 有鑑於此，提供-種適用於沈積各種元素之多晶或單晶薄膜之設備及方法實 為必要。 【内容】 6 為解決先前技術之電漿增強沈積裝置適用原料有限 ，以及採用固態原料難以 ，成晶態薄膜之缺點，本發明之目的在於提供一種電聚增強沈積裝置，其可適用 多種原料，並能形成質量優良之晶態薄膜，提高產品質量。 - 本，明之另一目的在於提供-種利用電漿增強沈積形成晶態薄膜之方法。 户為f現本發明之目的，本發明提供一種電漿增強薄膜沈積裝置，其包括：一 才]腔至’其具有氣體入0及抽真空系統；一電磁裝置，用以於該腔室内預 ^之電紐生區礙生歡贿之磁場；—微波裝置，其設置浦綱腔室之中 部，=以產生微波並發射微波至該電漿發生區域；一對雜乾，彼此相對設置於 忒腔至内之電漿發生區域二側，各濺射靶分別與一陰極接觸；及一固持器，用以 • 固持待處理之工件；其中，該微波之頻率匹配該磁場強度足以產生電子回旋共 振’藉此產生電漿離子轟擊該濺射靶’使得料才原子激發出來並沈積於工件表面 . 形成薄膜。 • 其中’微波之頻率可為2.45GHz，對應需匹配磁場強度為875高斯。 進一步’濺射乾與直流磁控管相連，提高沈積速度。 更進一步，固持器圍繞一中心軸旋轉，以提高薄膜均勻性。 上述裝置可獲得電漿密度達到5xl〇1Qcm-3至9)(1012^^3。 本發明還提供一種電漿增強薄膜沈積之方法，其包括步驟： 導入反應氣體至一真空反應腔室内，形成預定氣壓； 將一對濺射靶分別相對設置於該真空反應腔室令預定之電聚產生區域二側； 於該真空反應腔室内沿一方向發射預定頻率之微波； ’ 於該真空聽腔室内該預定之電漿產生區域建立磁場，且磁場之強度足夠匹 配該微波之鮮贿縱電驗生區職生财轩哺雜，產^密度電 敦， 電漿離子轟擊該濺射激發產生濺射原子； 鞋材原子沈積於基底表面形成薄膜。 相較於先前技術，由於本發明採用高密度電漿激發相互面對設置之乾材， 政尚材原子能董，形成晶態薄膜’另外，本發明可適用於各種金屬、金 合物或石夕化物、碳化物等物質’其適用原料廣泛’均能形成相應多 锋化 并坦t玆时立〇併旦 '曰曰/寻膜， 7 1321810 【實施方式】 下面以具體實施例來說明本發明之實施方式。 請參閱第二圖，本發明實施例之電漿增強薄膜沈積裝置30主要包括：一反 應腔，31 ’其係密閉之空腔體，該聽腔室31 -姻設有通氣口（圖未標示）， 複數氣體源51，53及55分別通過流量控制器52，54及56連接至該通氣口與該 • f應腔室相連通；其中，所述氣體源51可提供氬氣(Ar)，氪氣(Kr)或氙氣㈣； ，源53可提供氬氣及氮氣W之混合氣體；氣體源55可提供氬氣及氫氣㈣， 氬軋及甲院(CHi)或氬軋及之混合氣體。上述氣體可藉&流量控制 器來控制其開關及流量。 • _反應腔室31外面頂部附件設置有一對磁線圈32及33，其分別與電源（圖 未示）連接通電可用以產生電磁場，為能滿足電子回旋共振需要磁線圈2 及33所產生之磁場應達到875高斯(G);磁線圈％及33應盡可能靠此隨腔室 31使得反應腔至31内之磁場強度盡可能最大。當然，磁線圈32及刃亦可設 置於腔室崎，惟，如此設置時，磁細32及33有可能被濺縣子污染， • 需經常清潔。 該反應腔室31内設置有：一固持器4〇，係設置於該城腔室&之底部附 近丄複數待處理之工件41可固定設置於該固持器4〇上；一天線34設置於聽 腔室31之中部，其與微波發生器（圖未示）相連接並可將微波發生器產生之頻 率為2.45GHz之微波發射；一對陰極35分別設置於錢腔室中部相對兩側，其 _相對技面分別設置有濺射乾36，該賤練36係金層或其侧態物；另外々斤 述陰極35分別與直流陰極電源37之負極電連接，而陰極電源37 接地。 咖山所述城腔室31底部還開設有氣體丨口，即抽真空端口(圖未標两，該抽真 二端口與抽真空系統(圖未標示)相連接，其包括一渴輪栗浦⑹及一機械栗浦祕。 ―節，閥61設置於該抽真空端口處，藉以控制抽真空端口之開啟程度，從而控 制抽氣流罝(〇)及壓力(P);三袖氣閥62，63及Μ分別設置於連接抽真空端口與 該渦輪，60及機械泵浦66間之管道中。該機械泵浦66可將^^腔室31内部 初=抽氣降壓’然後開啟渦輪泵浦⑷可繼續將腔室31内部抽真空降壓至2 X10托(ton)或更低。另外，機械泵浦66可作為渦輪泵浦6〇之備用泵浦。 使用時，首先將瓦!|腔室31内部藉由機械栗浦66初步抽真空，至一定程度 8 1321810 之後·60 步將猶31 β雜真妓2χ10減更低，此 Β夺可確保反應腔室内部空氣紅鱗净；然後打開流量控制器52、％或％，通 入適細氣體，使得_室31内部形成氣壓約為〇1，托;將磁線圈32、 • 33接通電源’攸驗室内產生至少奶高斯之磁場，激發稀航體放電，產 生電漿39 ;再開啟微波產生器’經天線34發射出頻率為245GHz之微波，電子 *在磁場巾因受洛减力和她)影響，沿磁力細螺旋_Γ、珊，當其環繞_ (Cyd_n Frequency)與所施加之微波頻率相等時，電子能量與所施電場間產生共 振，微波能量因而有效地傳遞給自由電子，造成氣體高度鱗㈣⑽也⑽及離 子化(Ionization) ’增加電漿39之離子密度，可達到知妒咖^至％1〇12〇11_3。電 • 漿39釋放之高密度離子轟細邊之濺射靶36，將練原子激發出來，並受磁場 擴散作用濺射於工件41之表面’幵)成濺射薄膜。由於離子密度大，能量高故， - 了賤射/尤積形成多晶或單晶悲薄膜。固持器40帶動工件41作旋轉運動，可使薄 . 膜沈積更均勻。 丨 上述實施例中，通過微波電子回旋共振增強電漿中離子密度並提高其能量， . 並且將濺射靶36分別設置於靠近電漿區，故，有利於電漿產生之離子直接爲擊 勒材’離子能量未受損失’動量高，密度大，提高濺射質量。其次，一對濺射靶 36互相面對設置於電漿區兩側’有利於提高濺射原子均勻性。 另一個實施例中’可設置多對磁線圈’以於反應腔室内形成足夠強度之磁場。 第二貫施例中’可採用直流磁控管(DC Magnetron)替代陰極35，直流磁控管 ® 可將低頻率之高壓直流電轉變爲高頻率之微波，其可進一步提高沈積速率，並 且，直流磁控管可將電漿離子轟擊把材時產生之二次電子吸引回來至起材表面， 以減少或避免二次電子轟擊待處理工件之表面，提高沈積薄膜之枯著性 (Adhesion) ° 本技術領域人員應當了解，本發明並不限於上述實施例，還可有其他變化， 例如：磁線圈32、33並不限於上述設置方式，其亦可設置於反應腔室31二外側， 磁線圈之設置僅需滿足能夠於電漿發生區形成足夠磁場即可，甚至可以用磁鐵替 代。天線亦不必限於上述實施例之設置方式，其設置僅需能夠將微波發生器產生 之微波傳送發射至電楽潑生區以提高‘電漿離子密度即可。 本發明上述電漿增強濺射沈積裝置可用於沈積形成各種功能性薄膜，採用不 9 二諸如石夕膜、金屬膜、金剛石膜、類金剛石膜等。例如，當用於新 L.、日守’希望能夠形成金剛石或類金剛石薄膜，此時利用含石炭之姆(如 即可喊所需雜。當驗轉體製鱗，採财化物或金屬 形齡或_ _。耻’本個之姆來膽泛，突破 利用氣態原料以及固態原料難以形成晶態薄膜之限制。 >見第·—目本發明糊電聚增㊣濺射沈積冑膜之方法祕以下步驟： 氣壓導人反應氣體。即導人反應氣體至-真空反應腔室内，形成預定 ^仏爾。峨_缝腔卽沿—糊咖定鮮之微波； Φ將洋4· 建立磁場，產生微波電子回旋共振；即於該真空反應腔室内預定 .^ ^ :立磁場，且磁場之強度足夠匹配該微波之頻率以於預定電漿區域 產生微波電子回旋共振，產生高密度電漿； — ^驟24 ·轟擊練產生濺射原子。將一對濺射乾分別相對設置靠近電 域，電漿離子轟擊乾材產生濺射原子； 步驟25 :鱗沈積形成_原子雌沈積於基絲面形成薄膜。 上述方法巾’錢氣體之成份可根觀麟要進行，何獅氯氣 氣、氣氣或氫氫與甲院等混合氣體，氣體壓力約為αι〜1〇托。步驟二中, 之頻率可為2.45GHz ’則磁場之強度應為875高斯，以匹配形成電子回旋轉\ 採用上述方法可獲得電漿離子密度達到5xl〇n 9χ1〇12血3。 拼、^ 要選擇碎、魏物义墨碳、碳錄、金屬或錢化合物，以對應形^ 膜（金剛石膜或類金剛石膜）或金屬膜。另外，工件最好隨固持器圍裝 作旋轉運動’以提高薄膜均勻性。 综上所述，本發明確已符合發明專利之要件，遂依法提出專利令請。惟以 上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利範圍。兴凡 热悉本案技藝之人士援依本發明之精神所作之等效修飾或變化 牛凡 申請專利範圍内。 .一盖於以下 【圖式簡單說明】 第一圖係先前技術·之電漿增強薄膜沈積設備示意圖； 第二圖係本發明實施例之電漿增強薄膜濺射沈積裝置示意圖； 1321810 第三圖係本發明實施例之電漿增強薄膜濺射沈積方法流程圖。 【主要元件符號說明】Gbw Charge), RF Discharge, and G4〇w Discharge), and Microwave Discharge. The typical DC-wire method is a gas-filled glass that is filled with a gas, and the gas pressure is about αι~ job σ and inserts a two-metal electrode. When the gas pressure in the tube is at the above-mentioned pressure and the fixed value, and when the Wei job is higher than the breakdown of the electricity, the gas begins to ionize and form the glow electric. The advantage of the silk electricity method is that the equipment has a simple structure and a low cost. However, ^ the disadvantage is that the electric seam is low, the electrode Rongyi has a miscellaneous silk, the cake f is extremely reduced, and the atoms sputtered from the electrode will pollute the electric seam. The method of shooting and tendering is to use a shed discharge with a frequency of 13.56 MHz to generate W. This method can produce pure weight and prepare a film by chemical vapor deposition. The microwave discharge system converts the microwave energy into the internal energy of the gas, so that it can be excited and ionized to form an electric method. The financial dynasty tube is dedicated to the electric power and the electricity is read into the discharge tube, and the gas in the tube is less - the electron is accelerated by the microwave electric field. Inelastic collision with gas molecules and obtaining the silkiness of the 'dead' is less than that of the former. A microwave electron shout resonance (Ε1_η Cyd_n Res()nance, sand) device is turned over to obtain a high-density "Microwave Discharge Laid-Generating Equipment, its profit-making Bozhou (four) Nove) high reverberation ^ to 5 1321810 to increase ions and The concentration of the atomic group in the plasma. A microwave ECR plasma deposition apparatus and a deposition method are disclosed in U.S. Patent No. 4,492,620, the disclosure of which is incorporated herein by reference. Wherein, the device comprises a discharge chamber 工作室 and a working chamber 2; • micro, the source is a magnetron (magnetronX diagram not shown), which generates a microwave with a frequency of 245 GHz, transmits through the waveguide & 4 and enters the discharge chamber through the quartz window 3 In addition, the quartz window 3 is provided with an electrical destruction outlet 5 for discharging the electropolymerization flow 6 to the substrate 7; the working chamber 2 is connected to a vacuum system, thereby controlling the gas force of the working chamber 2 . Magnetic _ 1G surrounds the prison room and is in the electric room! The internal production ^ is sufficient for the strength of the magnetic field to form an electron cyclotron resonance. Since the microwave frequency is 2.45 GHz, a magnetic field with a magnetic flux of 875 Gauss (G) should be formed within 1 discharge. In addition, the magnetic field formed by the magnetic coil ι can also be extended to the working chamber 2 to form a Diverging Magnetic Field whose magnetic field strength is gradually weakened from the σ 5 of the electric material to the substrate 7. Thus, the escape generated in the 'discharge $: can be derived from the expansion and the magnetic field to the studio 2. The gas supply systems 12 and 13 respectively supply different reaction gases to the discharge chamber 1 and the working chamber 2. To cool the discharge chamber 1, an inlet pipe 14 and a water outlet pipe 15 are provided to provide circulating cooling water, respectively. The annular sputtering target 16 composed of the material to be sputtered is placed near the plasma outlet 5 of the working chamber and is in close proximity to or in contact with the plasma stream 6. The money shot 16 is attached to a cathode 17, and the other portions that are not facing the plasma stream 6 are surrounded by the guard electrode 18. The cathode 17 is connected to a direct current power source. The patent utilizes a microwave ECR plasma deposition apparatus and method to realize thin film deposition of a metal or a metal compound at a lower temperature. However, due to the limited energy of the excited ions, an amorphous film is often formed, and it is difficult to realize polycrystalline. Or early film deposition. A microwave enhanced chemical vapor deposition apparatus and method is disclosed in U.S. Patent No. 77, the disclosure of which is incorporated herein by reference. It uses microwave electron cyclotron resonance to obtain electropolymerization, and electropolymerization enhanced chemical vapor deposition method can be used to turn a polycrystalline or single crystal film, such as a diamond film or a diamond-like film. However, chemical vapor deposition is required to transport the raw materials in a gaseous form (such as a carbonaceous gas such as a sulphur or ethylene) to the electropolymerization chamber. Therefore, the raw materials are: originally restricted; in addition, most of the metallic elements are It exists in the form of a solid compound, not a gas L. Therefore, the application range of this device is only limited to the deposition of thin films of carbon and carbon, which is difficult to apply to its dazzling metal. In view of this, it is necessary to provide an apparatus and method suitable for depositing polycrystalline or single crystal thin films of various elements. [Contents] 6 In order to solve the shortcomings of the prior art plasma-enhanced deposition apparatus, and the disadvantages of using solid-state raw materials, it is difficult to form a crystalline film. The object of the present invention is to provide an electro-convex-enhancing deposition device which can be applied to various raw materials. And can form a crystalline film of good quality and improve product quality. - Another purpose of the present invention is to provide a method for forming a crystalline film by plasma enhanced deposition. The present invention provides a plasma enhanced film deposition apparatus comprising: a chamber to a gas inlet 0 and a vacuum system; an electromagnetic device for pre-intervaling in the chamber ^ The electric field in the electric nascent area is inconvenient to bribe; the microwave device is arranged in the middle of the Pugang chamber, to generate microwaves and emit microwaves to the plasma generating area; a pair of dry and dry, opposite to each other a cavity to the inner side of the plasma generating region, each sputtering target is in contact with a cathode; and a holder for holding the workpiece to be processed; wherein the frequency of the microwave matches the magnetic field strength to generate electron cyclotron resonance 'The resulting plasma ion bombards the sputtering target' so that the atoms are excited and deposited on the surface of the workpiece. A film is formed. • The frequency of the microwave can be 2.45 GHz, which corresponds to a matching magnetic field strength of 875 Gauss. Further, the sputtering dry is connected to a DC magnetron to increase the deposition rate. Further, the holder rotates about a central axis to improve film uniformity. The above device can obtain a plasma density of 5x1〇1Qcm-3 to 9) (1012^^3). The invention also provides a plasma enhanced film deposition method, comprising the steps of: introducing a reaction gas into a vacuum reaction chamber to form Predetermining the air pressure; respectively, a pair of sputtering targets are respectively disposed on the vacuum reaction chamber to make two sides of the predetermined electropolymerization generating region; in the vacuum reaction chamber, a microwave of a predetermined frequency is emitted in one direction; 'in the vacuum chamber The predetermined plasma generating region establishes a magnetic field, and the strength of the magnetic field is sufficient to match the microwave in the bribery longitudinal electric health check-up area, and the density of the electricity is controlled by the plasma ion bombardment. The shoe material is deposited on the surface of the substrate to form a thin film. Compared with the prior art, since the present invention uses high-density plasma to excite the dry materials facing each other, the syllabus can form a crystalline film. In addition, the present invention is applicable. In various metals, gold compounds, or ashes, carbides and other materials, the wide range of applicable raw materials can form corresponding multi-fronting and entanglement. 7 1321810 [Embodiment] Embodiments of the present invention will be described below by way of specific embodiments. Referring to the second figure, the plasma enhanced film deposition apparatus 30 of the embodiment of the present invention mainly comprises: a reaction chamber, 31' which is sealed. a cavity, the ventilating chamber 31 is provided with a vent (not shown), and the plurality of gas sources 51, 53 and 55 are connected to the vent and the chamber by flow controllers 52, 54 and 56, respectively. The gas source 51 can provide argon (Ar), helium (Kr) or helium (4); the source 53 can provide a mixed gas of argon and nitrogen W; the gas source 55 can provide argon gas and Hydrogen (4), argon-rolled and chamber (CHi) or argon-rolled and mixed gas. The above gas can be controlled by the & flow controller to control its switching and flow. • The top outer attachment of the reaction chamber 31 is provided with a pair of magnetic coils 32. And 33, respectively, connected to a power source (not shown) for energization to generate an electromagnetic field, in order to satisfy the electron cyclotron resonance, the magnetic field generated by the magnetic coils 2 and 33 should reach 875 Gauss (G); the magnetic coils % and 33 should be exhausted It is possible to make the reaction chamber into 31 with the chamber 31. The magnetic field strength is as large as possible. Of course, the magnetic coil 32 and the blade can also be disposed in the chamber, but when so arranged, the magnetic fines 32 and 33 may be contaminated by the splashing of the county, and the cleaning is required. The workpiece 4 is disposed in the vicinity of the bottom of the city chamber & the workpiece to be processed 41 can be fixedly disposed on the holder 4; an antenna 34 is disposed in the listening chamber 31 In the middle, it is connected to a microwave generator (not shown) and can generate microwaves generated by the microwave generator at a frequency of 2.45 GHz; a pair of cathodes 35 are respectively disposed on opposite sides of the middle portion of the money chamber, and the relative art surface Separately, a sputtering dry 36 is provided, which is a 36-series gold layer or a side material thereof; and the cathode 35 is electrically connected to the negative electrode of the DC cathode power supply 37, respectively, and the cathode power supply 37 is grounded. At the bottom of the city chamber of Kashan, there is also a gas vent, which is a vacuum port (not shown in the figure. The two ports are connected to a vacuum system (not shown), which includes a thirsty wheel (6) and a mechanical pumper. In the section, the valve 61 is disposed at the vacuum port to control the opening degree of the vacuum port, thereby controlling the suction flow 罝 (〇) and the pressure (P); the three-sleeve valve 62, 63 and Μ are respectively disposed in the pipeline connecting the vacuum pumping port and the turbine, 60 and the mechanical pump 66. The mechanical pump 66 can pressurize the interior of the chamber 31 and then pump down the turbo pump. (4) The inside of the chamber 31 can be continuously depressurized to 2 x 10 Torr or lower. In addition, the mechanical pump 66 can be used as a spare pump for the turbo pump 6 。. The interior of the chamber 31 is initially evacuated by the mechanical Lipu 66, to a certain extent 8 1321810 · 60 steps to reduce the helium 31 β 妓 妓 2 χ 10 lower, this robbing can ensure that the air inside the reaction chamber is red and clear; then open The flow controller 52, % or %, is supplied with a fine gas so that the pressure inside the chamber 31 is about 〇1, The magnetic coils 32, • 33 are connected to the power supply. 'The test chamber generates at least a milk Gaussian magnetic field to excite the rare earth body to discharge, and generates a plasma 39. Then the microwave generator is turned on to emit a microwave having a frequency of 245 GHz through the antenna 34. In the magnetic field towel affected by the reduction force and her), along the magnetic fine spiral _ Γ, Shan, when its _ (Cyd_n Frequency) is equal to the applied microwave frequency, the electron energy and the applied electric field resonate, microwave The energy is thus effectively transmitted to the free electrons, causing the gas to be highly scaly. (4) (10) and (10) and ionization (Ionization). Increasing the ion density of the plasma 39 can reach the knowledge of the coffee to the %1〇12〇11_3. The sputtering target 36 of the high-density ion bombardment which is discharged from the slurry 39 excites the atom and is sputtered on the surface of the workpiece 41 by a magnetic field diffusion to form a sputtering film. Due to the high ion density and high energy, the sputum/special product forms a polycrystalline or single crystal film. The holder 40 drives the workpiece 41 to perform a rotary motion, which makes the film deposition more uniform. In the above embodiment, the ion density in the plasma is enhanced by microwave electron cyclotron resonance and the energy thereof is increased, and the sputtering target 36 is disposed close to the plasma region, respectively, so that the ions generated by the plasma are directly struck. The material 'ion energy is not lost', the momentum is high, the density is high, and the sputtering quality is improved. Secondly, a pair of sputtering targets 36 are disposed facing each other on both sides of the plasma region to facilitate the uniformity of sputtering atoms. In another embodiment, a plurality of pairs of magnetic coils may be disposed to form a magnetic field of sufficient strength within the reaction chamber. In the second embodiment, a DC magnetron (DC Magnetron) can be used instead of the cathode 35. The DC magnetron® can convert low-frequency high-voltage direct current into high-frequency microwave, which can further increase the deposition rate and DC. The magnetron can attract the secondary electrons generated by the plasma ion bombardment of the material to the surface of the workpiece to reduce or avoid the secondary electron bombardment of the surface of the workpiece to be treated, and improve the dryness of the deposited film (Adhesion). It should be understood by those skilled in the art that the present invention is not limited to the above embodiments, and other changes may be made. For example, the magnetic coils 32 and 33 are not limited to the above arrangement, and may be disposed on the outer side of the reaction chamber 31, and the magnetic coil The setting only needs to be sufficient to form a sufficient magnetic field in the plasma generating region, and even a magnet can be used instead. The antenna is also not necessarily limited to the arrangement of the above embodiment, and the arrangement only needs to be able to transmit the microwave transmission generated by the microwave generator to the electrospray region to increase the 'plasma ion density. The above plasma enhanced sputter deposition apparatus of the present invention can be used for depositing various functional thin films, such as a stone film, a metal film, a diamond film, a diamond-like film or the like. For example, when used in the new L., the Japanese Guardian 'has to be able to form a diamond or diamond-like film, at this time the use of charcoal-containing m (such as can call the required miscellaneous. When the system scale, mining or metal age Or _ _. Shame's one is bold, breaking through the limitation of using gaseous raw materials and solid raw materials to form crystalline thin films. > See the method of the present invention The following steps: The air pressure guides the reaction gas, that is, the reaction gas is introduced into the vacuum reaction chamber to form a predetermined ^ 仏 峨 峨 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Generating a microwave electron cyclotron resonance; that is, pre-determining a magnetic field in the vacuum reaction chamber, and the strength of the magnetic field is sufficient to match the frequency of the microwave to generate microwave electron cyclotron resonance in a predetermined plasma region to generate a high-density plasma; ^ 24 · Bombardment produces sputtered atoms. A pair of sputter dry sets are placed relatively close to the electrical domain, and plasma ions bombard dry materials to produce sputtered atoms; Step 25: Scale deposition formation _ atomic female deposition on the base surface Film. Method towel 'the composition of money gas can be carried out by Guan Lin. Heshi chlorine gas, gas or hydrogen and hydrogen and a hospital mixed gas, the gas pressure is about αι~1〇. In step two, the frequency can be 2.45. At GHz', the strength of the magnetic field should be 875 Gauss, to match the formation of electrons to rotate. Using the above method, the plasma ion density can reach 5xl〇n 9χ1〇12 blood 3. Fighting, ^ Selecting the crush, Weiwu Yimo carbon, carbon recording Metal or money compound to correspond to the film (diamond film or diamond-like film) or metal film. In addition, the workpiece is preferably rotated with the holder to improve the uniformity of the film. It is clear that the requirements of the invention patent have been met, and the patent application is filed according to law. However, the above is only the preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application in this case. Equivalent modification or variation in accordance with the spirit of the present invention is within the scope of the patent application. [1] The following is a schematic diagram of a plasma enhanced film deposition apparatus of the prior art; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 3 is a schematic diagram of a plasma enhanced thin film sputter deposition method according to an embodiment of the present invention; FIG. 3 is a flow chart of a plasma enhanced thin film sputtering deposition method according to an embodiment of the present invention.
沈積裝置 30 反應腔室 31 磁線圈 32，33 天線 34 陰極 35 濺射靶 36 陰極電源 37 電漿 39 固持器 40 工件 41 氣體源 51 ’ 53，55 流量控制器 52，54，56 滿輪泵 60 節流閥 61 抽氣閥 62 ， 63 ， 64 機械泵 66Deposition apparatus 30 Reaction chamber 31 Magnetic coil 32, 33 Antenna 34 Cathode 35 Sputter target 36 Cathode power supply 37 Plasma 39 Retainer 40 Workpiece 41 Gas source 51 ' 53,55 Flow controller 52, 54, 56 Full wheel pump 60 Throttle valve 61 exhaust valve 62, 63, 64 mechanical pump 66
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