JPWO2012157298A1 - Substrate heat treatment apparatus and substrate heat treatment method - Google Patents

Abstract

[Problem] The heat treatment time of the substrate is shortened and the cost is greatly reduced. [Solution] First lamp heaters 36a to 36d for emitting heating light for heating the substrate 12 in the first region; second lamp heaters 38a and 38b for emitting heating light for heating the substrate 12 in the second region; The third lamp heaters 40a to 40d for emitting heating light for heating the substrate 12 in the third region, and the second lamp heater 38a and the substrate 12 in the second region are arranged, and the heating light is applied to the substrate 12 Condensing lenses 44a to 44c that irradiate in a direction orthogonal to the moving direction of the substrate 12, and a moving unit 48 that moves the substrate 12 from the first region to the third region via the second region, according to the heat treatment profile. The first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d are controlled, and the movement of the substrate 12 is controlled. [Selection] Figure 5

Description

  The present invention relates to a substrate heat treatment apparatus and a substrate heat treatment method. More specifically, the present invention improves crystal defects and film quality of a semiconductor wafer, converts an amorphous silicon layer formed on a glass substrate constituting a liquid crystal substrate into a polysilicon layer, and configures a substrate for a solar cell. The present invention relates to a substrate heat treatment apparatus and a substrate heat treatment method for improving the film quality of an amorphous silicon layer formed on an insulating substrate and converting it to a polysilicon layer by annealing.

  For example, ion-implanted semiconductor wafers and semiconductor wafers formed by CVD, sputtering, or vapor deposition are heat-treated to improve crystal defects and film quality. In addition, the liquid crystal substrate is heat-treated in order to convert the amorphous silicon layer formed on the glass substrate into a polysilicon layer as a means for speeding up the operation of the transistor. Further, the solar cell substrate is a glass substrate, a substrate having an insulating film such as alumina, silicon oxide film, or silicon nitride film on the surface, and an amorphous silicon layer formed on an insulating substrate such as a carbon substrate having an insulating film on the surface. In order to improve the film quality and to convert the amorphous silicon layer to the polysilicon layer, heat treatment is performed.

Regarding such heat treatment, Non-Patent Document 1 describes the development of shallow junction technology for about 40 years from the 1970s until 2008 when a MOS transistor with a gate width of 30 nm was realized at the laboratory stage. Non-Patent Document 1 classifies and evaluates the shallow junction technology as follows.
(1) Infrared lamp annealing: This technology is the oldest technology with a long annealing time of about 30 seconds to 1 minute.
(2) RTA (Rapid Thermal Annealing): This technique uses a halogen lamp, and the annealing time is about 1 to 60 seconds. This technique uses a halogen lamp having a long wavelength and has high temperature uniformity between patterns.
(3) Spike RTA: This technique is a method in which the RTA of (2) is performed at a rapid temperature rise, and the annealing time is 0.1 to 1 second.
(4) FLA (Flash Lamp Annealing): This technology uses a xenon lamp. The shortest annealing time is about m seconds. The temperature uniformity between patterns is inferior to the RTA of (2). Non-Patent Document 1 shows an example in which the substrate temperature is raised from 450 ° C. to 1000 to 1300 ° C.
(5) LSA (Laser Spike Annealing): This technique scans a substrate with a carbon dioxide laser, and reaches a peak temperature of 1350 ° C. or higher in about m seconds. The LSA can be performed after the spike RTA of (3).
(6) MSA (Milli Second Annealing): This technique is a technique for performing annealing at 1000 to 1050 ° C. for 0.1 second or less using a xenon lamp. This technique can also anneal for ^10-3 seconds.

  Non-Patent Document 1 discloses a heat treatment of a semiconductor wafer in which (4) FLA and (6) MSA are combined among these methods.

  FIG. 19 is a graph showing the relationship between the surface temperature and the time of the semiconductor wafer in FLA. In the single wafer heat treatment, one semiconductor wafer is heated to 400 to 500 ° C. on a metal support plate called a hot plate. Thereafter, the semiconductor wafer is annealed for a short time by approaching a large number of disk-shaped xenon lamps having a diameter of about 3 mm and immediately turning off the lamp after the lamp is turned on.

  Non-Patent Document 2 describes that heat treatment at 1000 ° C. or lower is performed in a furnace in order to densify the insulating film. Currently, seven years after the publication of Non-Patent Document 2, the densification of the insulating film is generally performed by lamp heating at a low temperature of about 300 to 500 ° C. as the junction depth decreases.

  In the conventional FLA shown in FIG. 19, a semiconductor wafer is preheated to 500 ° C. by a hot plate, and then heated to 1000 ° C., for example, and then returned to 500 ° C. again. However, since the hot plate has heat retained by the metal plate, the temperature drop from the preheating temperature is slow, and the standby time until the next semiconductor wafer is processed becomes long. Furthermore, the method using a hot plate requires a long time to change the preheating temperature. In addition, the hot plate can process only one semiconductor wafer at a time, and if two or more wafers are processed simultaneously, the width of the heating device becomes large. Therefore, the method using a hot plate cannot practically process two or more sheets.

  Furthermore, since the method using the hot plate heats the entire surface of the semiconductor wafer, if even one of a large number of arranged lamps has poor performance, the surface of the semiconductor wafer becomes in a non-uniform heating state. Therefore, in the method using the hot plate, it is necessary to maintain the performance of all the lamps, so that the maintenance cost becomes high.

  On the other hand, film quality improvement has been performed by furnace in the old days, and recently by lamp heating, but there is a similar problem.

  Therefore, the present applicant has developed a heat treatment apparatus for realizing such heat treatment.

  For example, Patent Document 1 includes a first region in which the interior of the furnace is heated to a first temperature with a heater, and a second region in which the interior of the furnace is heated to a second temperature higher than the first temperature with another heater. A mold heating furnace is disclosed. The heating furnace heats the semiconductor wafer to the first temperature in the first region, then transports the heated semiconductor wafer to the second region, and heats the semiconductor wafer to a predetermined temperature not lower than the first temperature and not higher than the second temperature.

Japanese Patent No. 4064911

Masataka Kato, “Development of Bonding Technology and Evaluation / Analysis Technology”, September 23, 2008, Fujitsu Microelectronics Limited Kazuo Maeda, “First Semiconductor Nanoprocess”, Industrial Research Committee, February 10, 2004, p. 104

  In this case, in the heat treatment apparatus disclosed in Patent Document 1, it is important to quickly and uniformly heat the semiconductor wafer to a desired heating temperature particularly in the second region.

  However, it is extremely difficult to uniformly heat the entire surface of a substrate such as a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate using a heater. Further, in order to heat the skin of these substrates at a high temperature in a short time, it is necessary to apply a large current to the heater. Therefore, the heat treatment apparatus has a problem that the cost required for the heat treatment increases. Furthermore, since a large current is applied to the heater and the heater is in a high temperature state, there is a problem in that the cost required for maintenance of the heat treatment apparatus increases as the heater deteriorates with time.

  The present invention has been made in view of the above-described problems, and arbitrarily adjusts the heat treatment time of a substrate which is a semiconductor wafer, a liquid crystal substrate or a solar cell substrate, and brings the skin of the substrate to a desired heating temperature. It is an object of the present invention to provide a substrate heat treatment apparatus and a substrate heat treatment method that can be rapidly heated. It is another object of the present invention to provide a substrate heat treatment apparatus and a substrate heat treatment method that can shorten the processing time and can significantly reduce the maintenance cost, the apparatus cost, and the operation cost of the apparatus. .

  A substrate heat treatment apparatus according to the present invention includes a first region for heating a substrate, which is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate, to a first temperature, and the substrate heated to the first temperature to a second temperature. A second region for heating, a third region for heating the substrate heated to the second temperature to a third temperature, a first heating means for heating the substrate in the first region, and the second A second heating unit that is a lamp heater that emits a heating light for heating the substrate in the region; a third heating unit for heating the substrate in the third region; and the substrate from the first region. A moving part that moves to the third region through the second region, and is disposed between the second heating means and the substrate in the second region, and is parallel to the surface of the substrate and the moving direction of the substrate Extending in a direction orthogonal to the substrate and the heating light with respect to the substrate A condenser lens that irradiates the substrate in a direction orthogonal to the moving direction and heats the substrate skin, a current supplied to the first heating unit, the second heating unit, and the third heating unit, and the moving unit A heat treatment profile storage unit that stores a heat treatment profile including a moving speed of the substrate, and controls the first heating means, the second heating means, and the third heating means according to the heat treatment profile; And a control unit for controlling the movement.

  In the substrate heat treatment apparatus, when the substrate is the semiconductor wafer, the first temperature is set in a range of 300 to 450 ° C. in order to improve crystal defects in the ion-implanted semiconductor wafer. The second temperature is set in a range of 800 to 1100 ° C., and the third temperature is set in a range of 200 to 400 ° C.

  In the substrate heat treatment apparatus, when the substrate is the semiconductor wafer, the first temperature is set to improve film quality defects of a film generated on the semiconductor wafer by any one of a CVD process, a sputtering process, and a vapor deposition process. , 200 to 450 ° C., the second temperature is set to 300 to 900 ° C., and the third temperature is set to 200 to 400 ° C.

  In the substrate heat treatment apparatus, when the substrate is the liquid crystal substrate, the first temperature is set in a range of 300 to 450 ° C. in order to change the amorphous silicon layer to a polysilicon layer, and the second temperature is The third temperature is set in a range of 550 to 1100 ° C., and the third temperature is set in a range of 200 to 400 ° C.

  The substrate heat treatment apparatus includes a horizontal heating furnace that carries the substrate into the first region on one end side and horizontally unloads the substrate from the third region on the other end side through the second region. It is characterized by that.

  In the substrate heat treatment apparatus, the condensing lens is disposed below the substrate, and the heating light condensed by the condensing lens on the substrate moving in the second region with the heat treatment surface down. Thus, the skin is heated from the vertically downward direction.

  In the substrate heat treatment apparatus, the condensing lens is disposed in a vertical state, and the heat treatment surface of the substrate is skin-heated from the horizontal direction by the heating light condensed by the condensing lens. .

  In the substrate heat treatment apparatus, the condenser lens is disposed to be inclined at a lower portion of the substrate, and the substrate moving in the second region with the heat treatment surface inclined downward is condensed by the condenser lens. Further, it is characterized in that the skin is heated obliquely downward by the heating light.

  In the substrate heat treatment apparatus, the substrate is carried into the first area on the lower end side in the vertical direction, and the second area on the lower end side in the vertical direction that is common to the first area is passed through the second area on the upper end side in the vertical direction. It consists of a vertical heating furnace for carrying out the substrate from three regions.

  In the substrate heat treatment method according to the present invention, a substrate which is a semiconductor wafer, a liquid crystal substrate or a solar cell substrate is carried into a first region, an electric current based on a heat treatment profile is supplied to a first heating means, and the substrate is A step of heating to one temperature, carrying the substrate from the first region to the second region, moving the substrate at a moving speed based on a heat treatment profile, and supplying a current based on the heat treatment profile to a lamp heater. 2 to the heating means, and the heating light emitted from the second heating means is applied to the substrate through a condensing lens extending in a direction parallel to the surface of the substrate and orthogonal to the moving direction of the substrate. Irradiating the substrate in a direction perpendicular to the moving direction of the substrate, skin heating the substrate to the second temperature, carrying the substrate from the second region to the third region, and Supplying a current based on a file to a third heating means, and heating the substrate to a third temperature, wherein the heat treatment profile comprises the first heating means, the second heating means, and the third heating. Including a current supplied to the means and a moving speed of the substrate.

  In the substrate heat treatment method, when the substrate is the semiconductor wafer, the first temperature is set in a range of 300 to 450 ° C. in order to improve crystal defects in the ion-implanted semiconductor wafer. The second temperature is set in a range of 800 to 1100 ° C., and the third temperature is set in a range of 200 to 400 ° C.

  In the substrate heat treatment method, when the substrate is the semiconductor wafer, the first temperature is set to improve film quality defects of a film generated on the semiconductor wafer by any one of a CVD process, a sputtering process, and a vapor deposition process. , 200 to 450 ° C., the second temperature is set to 300 to 900 ° C., and the third temperature is set to 200 to 400 ° C.

  In the substrate heat treatment method, when the substrate is the liquid crystal substrate, the first temperature is set in a range of 300 to 450 ° C. in order to change the amorphous silicon layer to a polysilicon layer, and the second temperature is The third temperature is set in a range of 550 to 1100 ° C., and the third temperature is set in a range of 200 to 400 ° C.

  In the substrate heat treatment method, the substrate is carried into the first region on one end side and unloaded in the horizontal direction from the third region on the other end side through the second region.

  In the substrate heat treatment method, the substrate is moved in the second region with the heat treatment surface down, and the heat treatment surface is moved by the heating light condensed by the condenser lens disposed under the substrate. The skin is heated from the vertically downward direction.

  In the substrate heat treatment method, the substrate is moved in the second region with a heat treatment surface in a vertical state, and the heat treatment surface is horizontally aligned by the heating light condensed by the condenser lens arranged in the vertical state. It is characterized by heating the epidermis.

  In the substrate heat treatment method, the substrate is moved in the second region with the heat treatment surface obliquely downward, and by the heating light condensed by the condenser lens arranged to be inclined below the substrate, The heat treatment surface is heated in an oblique direction from the bottom.

  In the substrate heat treatment method, the substrate is carried into the first region on the lower end side in the vertical direction, and the second region on the lower end side in the vertical direction that is common to the first region through the second region on the upper end side in the vertical direction. It is carried out from the third area.

  A substrate heat treatment method according to the present invention is a substrate heat treatment method in which heat treatment for improving crystal defects of an ion-implanted semiconductor wafer is performed by moving the upright semiconductor wafer in a heating furnace in a direction along the surface of the semiconductor wafer. And (A) a first lamp heater arranged to heat the inside of the heating furnace to preheat the semiconductor wafer at a temperature lower than the crystal defect improvement temperature (hereinafter referred to as “first temperature”). Region, (B) a temperature within the range of 850 to 1100 ° C. (hereinafter referred to as “second temperature”) for improving crystal defects between the first region (A) and the following third region (C). The inside of the heating furnace is heated to a second region in which a second lamp heater for generating in the furnace is disposed, and (C) a temperature within a range of 650 to 800 ° C. (hereinafter referred to as “third temperature”). Third with heater A region is arranged in the heating furnace, and a temperature profile in a moving direction of the semiconductor wafer moving in the second region is gradually decreased from a peak temperature in the range of the second temperature, and the first temperature and It is set to be continuous with the third temperature, and the semiconductor wafer preheated in the first region (A) passes through the second region (C) immediately before moving to the second region (C). The temperature profile is generated by causing a current to flow through the second lamp heater only during the period.

  In the substrate heat treatment method, in place of the heat treatment for crystal defect improvement, an oxide film, a nitride film, or a W film formed by CVD, sputtering, or vapor deposition is performed in a temperature range of 200 to 400 ° C. The method is characterized in that the second temperature is set to 500 to 750 ° C. and the third temperature is set to 200 to 450 ° C.

  In the substrate heat treatment method, the furnace inner wall width in a direction parallel to the surface of the semiconductor wafer is larger than the furnace inner wall width in a direction orthogonal to the parallel direction in a cross-sectional view in the major axis direction of the heating furnace. And

  In the substrate heat treatment method, the semiconductor wafer is held in the first region and the third region, and soaked to the first temperature and the third temperature, respectively.

  In the substrate heat treatment method, the semiconductor wafer is held in the third region and soaked to the third temperature, and then immediately before moving from the second region to the first region to the first lamp heater. The current is cut off.

  The temperature for crystal defect improvement in the present invention is preferably a first temperature (preheating temperature) of 100 to 450 ° C., a second temperature (annealing temperature) of preferably 850 to 1100 ° C., and a third temperature (intermediate holding temperature). Preferably it is 650-800 degreeC. The temperature for improving the film quality in the present invention is preferably a first temperature (preheating temperature) of 200 to 400 ° C., a second temperature (annealing temperature) of preferably 500 to 750 ° C., and a third temperature (intermediate holding temperature). Is preferably 200 to 450 ° C.

The features of the present invention that are different from the conventional FLA are as follows.
(A) The lamp heater performs single-sided heating or double-sided heating of a single semiconductor wafer, or single-sided heating of two semiconductor wafers whose back surfaces are arranged close to each other.
(B) Annealing for crystal defect improvement or film quality improvement is performed while the semiconductor wafer is moved in a furnace, not in a state where the semiconductor wafer is stationary.
(C) The annealed semiconductor wafer is not returned to the preheating temperature, but is heated in the third region having a temperature intermediate between the preheating temperature and the annealing temperature.
(D) The semiconductor wafer is preferably heated using a halogen lamp instead of a xenon lamp.
(E) The preheating of the semiconductor wafer is performed using a lamp heater instead of a hot plate.
(F) The semiconductor wafer is heated not by heating the entire surface to the same temperature all at once, but by scanning a band-like or linear region narrower than the diameter of the semiconductor wafer.
These features will be described in more detail.

  In the present invention, the semiconductor wafer carried into the furnace in a horizontal state or an upright state moves in the heating furnace in the vertical direction or in the horizontal direction along the surface of the semiconductor wafer. The structure of the heating furnace is not particularly limited. When the semiconductor wafer is placed vertically, the heating furnace has a furnace inner wall width parallel to the surface of the semiconductor wafer in a cross section in the major axis direction of the heating furnace, which is larger than the furnace inner wall width in a direction perpendicular to the parallel direction, A heating furnace with a small occupied floor area is preferable. In this case, in the heating furnace, a heater is arranged on a plane in the furnace parallel to the surface of the semiconductor wafer, and the distance between the heater and the semiconductor wafer is set as narrow as possible. The heating furnace is preferably a flat furnace in which the distance between the inner wall of the furnace and the surface of the semiconductor wafer or the edge of the semiconductor wafer is substantially constant over the entire circumference of the semiconductor wafer.

  The present invention divides the inside of the heating furnace into a first area (preliminary heating), a second area (annealing), and a third area (intermediate holding) when viewed in the moving direction of the semiconductor wafer carried from the inlet side of the heating furnace. ing. In the first region and the second region, a halogen lamp heater capable of rapid temperature increase and decrease is disposed. The third region plays a role of auxiliary heating for forming a high-temperature second region having a narrow width, and a halogen lamp heater or an electric resistance heater is disposed. The first region corresponds to a FLA preheating region, and in the second region, annealing for crystal defect improvement or film quality improvement is performed on the moving semiconductor wafer. In the third region, the annealed semiconductor wafer is temporarily held (hereinafter referred to as “intermediate holding”). The heating of each region will be described in more detail.

  First, in the first region, it is preferable that the semiconductor wafer is heated uniformly. That is, when the semiconductor wafer uniformly heated in the first region is scanned at the peak temperature of the second region, it is expected that the entire surface of the semiconductor wafer is heated to the annealing temperature at the same rate. Furthermore, in the first region, when not only the semiconductor wafer but also the semiconductor wafer support jig is uniformly heated, heat conduction from the semiconductor wafer to the support jig can be suppressed during the subsequent heating. Furthermore, in the third region, it is preferable that the semiconductor wafer is heated uniformly.

  When predetermined heating is performed in each region, the heating of the region where the semiconductor wafer is not disposed is as follows.

(A) Preheating of the semiconductor wafer in the first region: The second region where the semiconductor wafer is not disposed does not generate a predetermined annealing temperature. That is, in the first region, the semiconductor wafer is not heated at all, or is heated to a temperature that is not significantly different from the first temperature, so that the preheating temperature does not fluctuate. The third temperature in the third region plays a role of auxiliary heating that generates the second temperature (annealing temperature). Therefore, the third region where the semiconductor wafer is not disposed is preferably heated to the third temperature so that annealing can be started immediately after completion of the preheating.

(B) Annealing of the semiconductor wafer in the second region: The third region where the semiconductor wafer is not disposed needs to be heated to the third temperature so that the profile of the second temperature can be stably maintained. The first region is preferably continued to be heated to the first temperature for the same reason.

(C) Intermediate holding of the semiconductor wafer in the third region: The first region where the semiconductor wafer is not disposed may be continued or stopped. The second region needs to invalidate the second temperature profile.

  As described above, the semiconductor wafer introduced into the heating furnace moves through the first region, the second region, and the third region, and is sequentially subjected to preheating, annealing, and intermediate holding heating. Thereafter, when the entrance and exit of the heating furnace are common, the semiconductor wafer is taken out of the heating furnace from the third area via the second area and the first area. At the time of this extraction, annealing may or may not be performed in the second region. When annealing is performed, one semiconductor wafer is annealed twice. When the second annealing is not performed in the second region, the lamp heater is powered off in the second region. The semiconductor wafer returned to the first region may be heated again at the preheating temperature, or the power of the lamp heater may be shut off to rapidly cool the semiconductor wafer.

  In the present invention, the lamp heater is turned on immediately before the semiconductor wafer enters the second region, that is, as close to the entry time as possible. Further, the lamp heater needs to be energized and maintained while the semiconductor wafer moves in the second region. That is, if the lamp heater in the second region is always energized, or if the second temperature profile is generated by energizing for more than 1 minute, heat is conducted to the first region and the third region. In addition, a sharp temperature peak cannot be created. Similarly, in the second region, after the semiconductor wafer passes through the second region, the power switch is cut off or the current is suddenly dropped to invalidate the second temperature profile.

  The semiconductor wafer moves in the second region usually at a speed of 3 to 30 cm / second. The length of the second region is preferably set slightly larger than the diameter of the semiconductor wafer. The semiconductor wafer moving in the second region has a surface temperature slightly lower than the furnace temperature, and the difference increases as the moving speed of the semiconductor wafer increases.

  As described above, the semiconductor wafer constantly moves in the second region. Therefore, the entire surface of the semiconductor wafer is scanned at the peak temperature T21 or 30P even if the width of the peak temperature T21 or 30P (FIG. 8 or FIG. 16B) described later is an extremely thin line. By the way, the thermal budget of a semiconductor wafer is locally different in one semiconductor wafer due to heat conduction in the substance of the semiconductor wafer itself that is moving. In other words, the thermal budget at the rear end of the semiconductor wafer that is the slowest away from the second region and moves to the third region is greater than that of other portions. In order to compensate for such a local thermal budget difference, it is preferable that the semiconductor wafer is once held in the third region and heated more uniformly. However, when the annealing time is long, the heating of the third region can be stopped when the semiconductor wafer is once held in the third region.

  In the substrate heat treatment apparatus and the substrate heat treatment method of the present invention, in the second region, the heating light from the second heating means, which is a lamp heater, is used by using a condensing lens that extends in a direction orthogonal to the moving direction of the substrate. By heating the outer skin, the substrate can be heated to the required temperature in a short time only by supplying the minimum necessary current to the second heating means. Thereby, the operating cost of the apparatus is significantly reduced. Further, the substrate heat treatment apparatus and the substrate heat treatment method of the present invention perform the heat treatment by irradiating the moving light to the moving substrate in the direction orthogonal to the moving direction according to the temperature profile of the second region. By adjusting the moving speed, the heat treatment can be performed by arbitrarily selecting a time within the range of 0.1 seconds to 30 seconds. Furthermore, since the substrate heat treatment apparatus and the substrate heat treatment method of the present invention do not use a hot plate, the entire treatment time can be shortened.

  Moreover, it is a lamp heater arrange | positioned in a narrow linear area | region which produces peak temperature in a 2nd area | region. Therefore, the number of lamp heaters is significantly smaller than that of the conventional FLA. Therefore, maintenance costs are greatly reduced.

  Therefore, the present invention can be applied to many processes other than the process that requires MSA in the manufacturing process of the current semiconductor device having a gate width of 35 nm.

It is a plane sectional view of the horizontal type substrate heat treatment apparatus of a 1st embodiment. It is a longitudinal cross-sectional view of the horizontal type | mold substrate heat processing apparatus of 1st Embodiment. It is a perspective fragmentary sectional view near the 2nd field in the horizontal type substrate heat treatment apparatus of a 1st embodiment. It is an expansion longitudinal cross-sectional view of the 2nd area | region in the horizontal type | mold substrate heat processing apparatus of 1st Embodiment. It is a control block diagram in the horizontal type substrate heat processing apparatus of 1st Embodiment. It is explanatory drawing of the heat processing profile memorize | stored in the heat processing profile memory | storage part in the horizontal type | mold substrate heat processing apparatus of 1st Embodiment. It is a flowchart of the heat processing in the horizontal type | mold substrate heat processing apparatus of 1st Embodiment. It is explanatory drawing of the quartz surface temperature and substrate surface temperature in the horizontal type | mold substrate heat processing apparatus of 1st Embodiment. It is explanatory drawing of the measurement result of the quartz surface temperature and semiconductor wafer surface temperature in the horizontal type | mold substrate heat processing apparatus of 1st Embodiment. It is explanatory drawing of the measurement result of the quartz surface temperature in the case of applying the substrate heat processing apparatus of 1st Embodiment to the heat processing of the substrate for liquid crystals, and the substrate surface temperature for liquid crystals. 11A and 11B are longitudinal sectional views in a second region of a modification of the horizontal substrate heat treatment apparatus of the first embodiment. It is a longitudinal cross-sectional view of the vertical substrate heat processing apparatus of 2nd Embodiment. It is a longitudinal cross-sectional view of the horizontal type | mold substrate heat processing apparatus of 3rd Embodiment. FIG. 14A is a longitudinal sectional view of a horizontal substrate heat treatment apparatus according to the fourth embodiment, and FIG. 14B is a longitudinal sectional view of a horizontal substrate heat treatment apparatus according to the fifth embodiment. It is a longitudinal cross-sectional view parallel to the semiconductor wafer surface of the vertical substrate heat processing apparatus of 6th Embodiment. FIG. 16A is a vertical cross-sectional view orthogonal to the semiconductor wafer surface of the vertical substrate heat treatment apparatus of the sixth embodiment, and FIG. 16B is a first region to a third region of the vertical substrate heat treatment apparatus of the sixth embodiment. It is explanatory drawing of the furnace temperature in an area | region. It is an expanded sectional view of the lamp heater used with the vertical type substrate heat processing apparatus of 6th Embodiment. 18A and 18B are explanatory diagrams of the operation of the heater when the semiconductor wafer moves forward and backward in the vertical substrate heat treatment apparatus of the sixth embodiment. It is explanatory drawing of the relationship between the temperature of the semiconductor wafer by conventional FLA, and heating time.

  Embodiments of the present invention will be described below with reference to the drawings.

[First Embodiment]
FIG. 1 is a cross-sectional plan view of a horizontal substrate heat treatment apparatus 10 according to the first embodiment. FIG. 2 is a longitudinal sectional view of the horizontal substrate heat treatment apparatus 10 of the first embodiment. In the substrate heat treatment apparatus 10, the skin of the substrate 12 that is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate can be heat-treated. In the following description, “skin” refers to the surface layer of the substrate 12 when the substrate 12 is a semiconductor wafer, and when the substrate 12 is a liquid crystal substrate or a solar cell substrate. The uppermost layer formed on a glass substrate or an insulating substrate shall be said. The diameter of the semiconductor wafer is not particularly limited, and the diameter may be 300 mm or 450 mm. Further, the thickness of the liquid crystal substrate is not particularly limited. Usually, in a liquid crystal substrate, the glass substrate has a thickness of 1.5 to 2 mm, and an amorphous silicon layer is formed on the glass substrate. When the substrate 12 is a liquid crystal substrate, the amorphous silicon layer formed on the glass substrate can be converted into a polysilicon layer by performing a skin heat treatment. Further, when the substrate 12 is a solar cell substrate, it is possible to improve the film quality of the amorphous silicon layer formed on the insulating substrate or to convert the amorphous silicon layer into a polysilicon layer by performing a skin heat treatment. it can.

  The substrate heat treatment apparatus 10 is an apparatus that heats the substrate 12 by horizontally moving the substrate 12 with the heat treatment surface 12a facing upward in the direction of the arrow X that is the movement direction. The substrate heat treatment apparatus 10 is disposed at both ends of the quartz tube 14 that forms the heating space of the substrate 12 and the quartz tube 14, and moves in the vertical direction (the arrow Z direction in FIG. 2), thereby opening and closing the substrate 12. Gates 16a and 16b that open and close are provided. In this substrate heat treatment apparatus 10, the substrate 12 processed in the pretreatment process is carried into the quartz tube 14 from the left side (one end side) in FIGS. 1 and 2, and after the skin of the substrate 12 is heated, It is carried out from (the other end side) and supplied to the next step.

  The quartz tube 14 forms a flat furnace that accommodates the substrate 12 in a horizontal state. The width D in the vertical direction (arrow Z direction) of the heating space of the quartz tube 14 is set to be narrower than the width W in the horizontal direction (arrow Y direction) of the heating space. The substrate 12 is held by a ring-shaped substrate holder 20 fixed to the end of the rod 18 and moves in the direction of the arrow X in the quartz tube 14.

  In the internal space of the quartz tube 14, a first region 22, a second region 24, and a third region 26 are formed from the entrance gate 16 a side toward the exit gate 16 b side. In the first region 22, the substrate 12 is heated to the first temperature (preheating temperature). In the second region 24, the skin of the substrate 12 heated to the first temperature is heated to the second temperature (annealing temperature). In the third region 26, the substrate 12 heated to the second temperature is heated and held at the third temperature (auxiliary heating temperature). Inside the quartz tube 14, a temperature detector 28 that detects the substrate temperature in the first region 22, a temperature detector 30 that detects the substrate temperature in the second region 24, and a substrate temperature in the third region 26 are detected. A temperature detector 32 is arranged. As the temperature detectors 28, 30, and 32, for example, a pyrometer that detects the color temperature of the skin of the substrate can be used. In addition, a gas blower 34 for supplying atmospheric gas or purge gas is disposed inside the quartz tube 14 in the vicinity of the gate 16b on the outlet side.

  In the vicinity of the outer wall portion of the first region 22 of the quartz tube 14, a first lamp heater that emits heating light R facing the upper and lower surfaces of the substrate 12 to heat the substrate 12 in the first region 22 to the first temperature. 36a, 36b (first heating means) are arranged. Further, near the outer wall portion of the first region 22, first lamp heaters 36 c and 36 d (first heating means) that emit the heating light R so as to face the side peripheral portion of the substrate 12 are arranged. In the vicinity of the outer wall portion of the second region 24 of the quartz tube 14, the second surface 24 emits the heating light R facing the upper and lower surfaces of the substrate 12 in order to heat the skin of the substrate 12 in the second region 24 to the second temperature. Lamp heaters 38a and 38b (second heating means) are arranged. In the vicinity of the outer wall portion of the third region 26 of the quartz tube 14, a third lamp that emits the heating light R facing the upper and lower surfaces of the substrate 12 in order to heat and hold the substrate 12 in the third region 26 at the third temperature. Heaters 40a and 40b (third heating means) are arranged. Further, in the vicinity of the outer wall portion of the third region 26, third lamp heaters 40c and 40d (third heating means) that emit the heating light R so as to face the side peripheral portion of the substrate 12 are arranged. The first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d include a large number of halogen lamps 42 (FIGS. 3 and 4) arranged in a matrix.

  FIG. 3 is a perspective partial sectional view of the vicinity of the second region 24 in the horizontal substrate heat treatment apparatus 10 of the first embodiment. FIG. 4 is an enlarged longitudinal sectional view of the second region 24 in the horizontal substrate heat treatment apparatus 10 of the first embodiment.

  A plurality of cylindrical lenses 44a to 44c (condensing lenses) are arranged on the outer wall surface 15 of the quartz tube 14 facing the central portion in the arrow X direction of the lamp heater 38a. The cylindrical lenses 44 a to 44 c are parallel to the heat treatment surface 12 a on the upper surface of the substrate 12 carried into the second region 24, and extend in the arrow Y direction orthogonal to the arrow X direction that is the moving direction of the substrate 12. The cylindrical lenses 44 a to 44 c have a plano-convex lens shape in cross section, and a flat portion thereof is fixed in close contact with the outer wall surface of the quartz tube 14. The cylindrical lenses 44 a to 44 c have a light collecting characteristic only in a direction orthogonal to the extending direction, and the heating light R emitted from the halogen lamp 42 with respect to the substrate 12 is orthogonal to the moving direction of the substrate 12. Can be formed of quartz, which is the same material as the quartz tube 14.

  The length of the cylindrical lenses 44a to 44c in the arrow Y direction is set slightly longer than the diameter of the substrate 12 in order to uniformly heat the heat treatment surface 12a of the substrate 12 in the arrow Y direction. For example, when the substrate 12 is a semiconductor wafer and the diameter of the substrate 12 is 300 mm, the lengths of the cylindrical lenses 44a to 44c are preferably set to about 400 mm.

  FIG. 5 is a control block diagram in the horizontal substrate heat treatment apparatus 10 of the first embodiment.

  In the substrate heat treatment apparatus 10, the entire operation of the heat treatment is controlled by the control unit 46. The control unit 46 includes a substrate moving unit 48, a position detection unit 50, a heat treatment profile storage unit 52, first lamp heaters 36a to 36d, second lamp heaters 38a and 38b, and third lamp heaters 40a to 40d. The temperature detectors 28, 30 and 32 are connected.

  The substrate moving unit 48 moves the substrate 12 from the first region 22 to the third region 26 via the second region 24. The substrate moving unit 48 moves the substrate 12 in the quartz tube 14 at a moving speed set in a heat treatment profile to be described later. The position detector 50 detects the position of the substrate 12 in the quartz tube 14. The heat treatment profile storage unit 52 stores a heat treatment profile. The control unit 46 controls the first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d according to the current value set in the heat treatment profile.

  The temperature detectors 28, 30 and 32 detect the temperature of the heat treatment surface 12a. The control unit 46 controls the first lamp heaters 36a to 36d, the second lamp heater 38a, and the like so that the temperatures detected by the temperature detectors 28, 30 and 32 become the semiconductor wafer target temperatures set in the heat treatment profile. 38b and the third lamp heaters 40a to 40d are controlled.

  FIG. 6 is an explanatory diagram of a heat treatment profile stored in the heat treatment profile storage unit 52 in the horizontal substrate heat treatment apparatus 10 of the first embodiment.

  The heat treatment profile is set corresponding to each pretreatment process of the substrate 12 carried into the substrate heat treatment apparatus 10. For example, when the pretreatment process is a process of performing ion implantation processing on the substrate 12 (ion implantation 1), the heat treatment profile includes the current i11 supplied to the first lamp heaters 36a to 36d and the second lamp heater. A current i21 supplied to 38a and 38b, a current i31 supplied to the third lamp heaters 40a to 40d, and a moving speed v1 of the substrate 12 in the quartz tube 14 supplied to the substrate moving unit 48 are set. In the heat treatment profile, semiconductor wafer target temperatures T11, T21, and T31 of the substrate 12 in the first region 22, the second region 24, and the third region 26 are set. The temperature of the heat treatment surface 12a depends on the currents i11, i21, i31 supplied to the first lamp heaters 36a-36d, the second lamp heaters 38a, 38b, the third lamp heaters 40a-40d, and the moving speed v1 of the substrate 12. It is determined. Similarly, when the pretreatment process is a process of ion implantation 2 to 5, currents i12 to i35, movement speeds v2 to v5, and semiconductor wafer target temperatures T12 to T35 are set.

  When the pretreatment process is a process (CVD1) for performing the CVD process on the substrate 12 which is a semiconductor wafer, the current i16 supplied to the first lamp heaters 36a to 36d and the current supplied to the second lamp heaters 38a and 38b. i26, the current i36 supplied to the third lamp heaters 40a to 40d, the moving speed v6 of the substrate 12 supplied to the substrate moving unit 48, and the semiconductor wafer targets in the first region 22, the second region 24, and the third region 26 Temperatures T16, T26, and T36 are set. Similarly, when the pretreatment process is a process of CVD 2 to 5, currents i17 to i310, moving speeds v7 to v10, and semiconductor wafer target temperatures T17 to T310 are set.

  When the pretreatment step is a step of performing a sputtering process on the substrate 12 which is a semiconductor wafer (sputtering 1), the current i111 supplied to the first lamp heaters 36a to 36d and the second lamp heaters 38a and 38b are supplied. A current i211; a current i311 supplied to the third lamp heaters 40a to 40d; a moving speed v11 of the substrate 12 supplied to the substrate moving unit 48; and the semiconductor wafers in the first region 22, the second region 24, and the third region 26. Target temperatures T111, T211 and T311 are set. Similarly, when the pretreatment process is a process of sputtering 2 to 5, currents i112 to i315, movement speeds v12 to v15, and semiconductor wafer target temperatures T112 to T315 are set.

  When the pretreatment step is a step of performing vapor deposition on the substrate 12 (vapor deposition 1), a current i116 supplied to the first lamp heaters 36a to 36d, a current i216 supplied to the second lamp heaters 38a and 38b, A current i 316 supplied to the third lamp heaters 40a to 40d, a moving speed v16 of the substrate 12 supplied to the substrate moving unit 48, a semiconductor wafer target temperature T116 in the first region 22, the second region 24, and the third region 26, T216 and T316 are set. Similarly, when the pretreatment process is a process of vapor deposition 2 to 5, currents i117 to i320, moving speeds v17 to v20, and semiconductor wafer target temperatures T117 to T320 are set. Thus, the current and the moving speed supplied to the first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d are appropriately set according to the type of the pretreatment process.

  Next, heat treatment of the substrate 12 using the substrate heat treatment apparatus 10 will be described.

  FIG. 7 is a flowchart of the heat treatment in the horizontal substrate heat treatment apparatus 10 of the first embodiment.

  The control unit 46 opens the gate 16a on the entrance side of the substrate heat treatment apparatus 10, moves the substrate holder 20 holding the substrate 12 for which the pretreatment process has been completed in the direction of the arrow X (FIGS. 1 and 2), and the quartz tube 14 After the substrate 12 is carried into the first region 22 on one end side, the gate 16a is closed (step S1).

  Next, the control unit 46 reads out the heat treatment profile corresponding to the pretreatment process of the substrate 12 from the heat treatment profile storage unit 52 (step S2), the first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and The third lamp heaters 40a to 40d are controlled (step S3). Further, the control unit 46 controls the substrate moving unit 48 according to the read heat treatment profile (step S4), and moves the substrate 12 in the arrow X direction.

  For example, when the pretreatment process of the substrate 12 is the process of ion implantation 1 (FIG. 6), the control unit 46 supplies the current i11 to the first lamp heaters 36a to 36d and the current to the second lamp heaters 38a and 38b. i21 is supplied, the current i31 is supplied to the third lamp heaters 40a to 40d, and the substrate 12 is moved in the arrow X direction at the moving speed v1.

  The substrate 12 moving in the direction of the arrow X in the quartz tube 14 is heated at a desired temperature in the first region 22, the second region 24, and the third region 26 (step S5).

  FIG. 8 is an explanatory diagram of the quartz surface temperature and the substrate surface temperature in the horizontal substrate heat treatment apparatus 10 of the first embodiment. The substrate surface temperature is, for example, the temperature of the surface heat treatment surface 12a of the semiconductor wafer when the substrate 12 is a semiconductor wafer, and the substrate surface when the substrate 12 is a liquid crystal substrate or a solar cell substrate. 12 is the temperature of the uppermost heat treatment surface 12 a of the layer formed on the surface 12.

  For example, when the pretreatment process of the substrate 12 is the process of ion implantation 1, the first lamp heaters 36a to 36d supplied with the current i11 based on the selected heat treatment profile receive the heating light R from the halogen lamp 42. It injects and the surface of the quartz tube 14 in the 1st field 22 is heated to temperature T1 (Drawing 8 (a)). Then, the substrate 12 moving in the first region 22 is preheated uniformly to the temperature T11 by the heating light R transmitted through the quartz tube 14 (FIG. 8B). The temperature detector 28 may detect the temperature T11 at a predetermined time interval based on the emitted light r from the substrate 12. The control unit 46 may appropriately adjust the detected temperature T11 by feedback control so that the detected temperature T11 becomes the semiconductor wafer target temperature T11 of the first region 22 set in the heat treatment profile.

  Further, when the pretreatment process of the substrate 12 is the process of ion implantation 1, the second lamp heaters 38a and 38b supplied with the current i21 based on the selected heat treatment profile cause the heating light R to be emitted from the halogen lamp 42. The surface of the quartz tube 14 in the second region 24 is heated to the temperature T2 (FIG. 8A). Next, the heating light R heats the atmosphere of the second region 24 in the quartz tube 14 and is condensed by the cylindrical lenses 44a to 44c disposed in the central portion in the moving direction of the substrate 12, and is applied to the heat treatment surface 12a. Irradiated. After the preliminary heating in the first region 22, the substrate 12 moving in the second region 24 has a heat treatment surface 12 a having a temperature T 2 on the surface of the quartz tube 14 due to the heating light R collected by the cylindrical lenses 44 a to 44 c. Is heated to a higher temperature T21 (FIG. 8B). In this case, the substrate 12 is scanned in the arrow X direction, which is the moving direction of the substrate 12, by the condensed linear (three in the configuration of FIG. 4) heating light R, so that the heat treatment surface 12a is scanned. The entire surface of the heat treatment surface 12a is heated up to a substantially uniform temperature T21 (annealing temperature). In FIG. 8B, the temperature T21 of the heat treatment surface 12a in the second region 24 has three peaks because the three cylindrical lenses 44a to 44 arranged in the arrow X direction shown in FIG. This is because the heating light R is simultaneously condensed at three locations of the substrate 12 by 44c.

  The temperature T21 of the heat treatment surface 12a in the second region 24 is determined by the current i21 supplied to the second lamp heaters 38a and 38b, the moving speed v1 of the substrate 12, and the condensing magnification of the cylindrical lenses 44a to 44c. . The temperature detector 30 may detect the temperature T21 at a predetermined time interval based on the radiated light r from the substrate 12. The control unit 46 may appropriately adjust the detected temperature T21 by feedback control so that the detected temperature T21 becomes the semiconductor wafer target temperature T21 in the second region 24 set in the heat treatment profile.

  Furthermore, when the pretreatment process of the substrate 12 is the process of ion implantation 1, the third lamp heaters 40a to 40d supplied with the current i31 based on the selected heat treatment profile are the first lamp heaters 36a to 36d. Similarly, the heating light R is emitted from the halogen lamp 42 to heat the surface of the quartz tube 14 in the third region 26 to the temperature T3. Then, the substrate 12 moving in the third region 26 is auxiliary-heated uniformly to the temperature T31 by the heating light R transmitted through the quartz tube 14 to the temperature T31. The temperature detector 32 may detect the auxiliary heating temperature T31 at a predetermined time interval based on the radiated light r from the substrate 12. The control unit 46 may appropriately adjust the detected temperature T31 by feedback control so that the detected temperature T31 becomes the semiconductor wafer target temperature T31 in the third region 26 set in the heat treatment profile.

  When the heat treatment of the heat treatment surface 12a in the first region 22, the second region 24, and the third region 26 is finished, the control unit 46 opens the gate 16b on the outlet side and removes the substrate 12 from the third region 26 on the other end side. After carrying out to the next processing process, the heat processing with respect to the next board | substrate 12 is started (step S6).

  Note that the temperatures T11 to T31 of the heat treatment surface 12a in the first region 22, the second region 24, and the third region 26 are T11 <T21 and T31 when the pretreatment process for the substrate 12 is an ion implantation process. It is preferable that the temperatures T1, T2, and T3 of the surface of the quartz tube 14 in the first region 22, the second region 24, and the third region 26 are set so that <T21 and T11 ≧ T31. When the pretreatment process for the substrate 12 is a CVD process, a sputtering process, or a vapor deposition process, the surface of the quartz tube 14 is set so that T11 ≦ T21, T31 ≦ T21, and T11 ≧ T31. It is preferable that the temperatures T1, T2, and T3 are set.

  FIG. 9 is an explanatory diagram of the measurement results of the quartz surface temperature and the semiconductor wafer surface temperature in the horizontal substrate heat treatment apparatus 10 of the first embodiment when the substrate 12 is a semiconductor wafer. 9 shows the surface temperature of the quartz tube 14 in the first region 22, the second region 24, and the third region 26, and the first region 22, the second region 24, and the A specific relationship with the temperature of the heat treatment surface 12a in the three regions 26 is shown. In this case, when the pretreatment process is an ion implantation process for the substrate 12, the substrate 12 is heated in the range of 300 to 450 ° C. in the first region 22, and the heat treatment surface 12 a is 800 to 800 in the second region 24. In the third region 26, the substrate 12 is heated in a range of 200 to 400 ° C. Further, when the pretreatment process is any one of the CVD process, the sputtering process, and the vapor deposition process for the substrate 12, the substrate 12 is heated in the range of 200 to 450 ° C. in the first region 22, and in the second region 24, The heat treatment surface 12 a is heated in the range of 300 to 900 ° C., and in the third region 26, the substrate 12 is heated in the range of 200 to 400 ° C.

  For example, when improving the crystal defects of the substrate 12 subjected to ion implantation (ion implantation 1), the temperature T1 (first temperature) of the surface of the quartz tube 14 in the first region 22 is set to 450 ° C. Further, the temperature T2 (second temperature) of the surface of the quartz tube 14 in the second region 24 is set to 500 ° C. Furthermore, the temperature T3 (third temperature) of the surface of the quartz tube 14 in the third region 26 is set to 400 ° C. In the substrate 12, the temperature T <b> 21 of the heat treatment surface 12 a is set to 1100 ° C. by the condensing action of the cylindrical lenses 44 a to 44 c, and the heat treatment surface 12 a is rapidly skin-heated in the second region 24. As a result, the crystal defects of the semiconductor wafer can be improved extremely well.

  When the film quality of the film generated on the substrate 12 by the CVD process is improved (CVD 1), the temperature T1 (first temperature) of the surface of the quartz tube 14 in the first region 22 is set to 450 ° C. Further, the temperature T2 (second temperature) of the surface of the quartz tube 14 in the second region 24 is set to 600 ° C. Furthermore, the temperature T3 (third temperature) of the surface of the quartz tube 14 in the third region 26 is set to 400 ° C. In the substrate 12, the temperature T <b> 21 of the heat treatment surface 12 a is set to 900 ° C. by the condensing action of the cylindrical lenses 44 a to 44 c, and the heat treatment surface 12 a is rapidly heated in the second region 24. As a result, the film quality defect of the film generated on the substrate 12 can be improved extremely well.

  In the substrate heat treatment apparatus 10 of the first embodiment, the heat treatment profile for controlling the first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d is set according to the pretreatment process of the substrate 12. As a result, the substrate 12 can be optimally heat-treated in any pretreatment process. Further, since the substrate heat treatment apparatus 10 performs the heat treatment while moving the substrate 12 in the quartz tube 14, for example, improvement of crystal defects after ion implantation treatment and improvement of film quality after film formation such as CVD, sputtering, vapor deposition, etc. Therefore, an appropriate heat treatment can be performed in a short time.

  In addition, since the high heating temperature of the second region 24 is realized by the condensing action of the cylindrical lenses 44a to 44c, it is not necessary to supply a large current to the halogen lamps 42 of the second lamp heaters 38a and 38b. Therefore, the operating cost of the substrate heat treatment apparatus 10 can be greatly reduced. Further, since the halogen lamp 42 does not need to supply a large current, the life of the halogen lamp 42 is extended, and thus the maintenance cost can be reduced. Moreover, since the heating temperature of the heating light R emitted from the halogen lamp 42 is extremely stable, crystal defects and film quality defects on the heat treatment surface 12a can be improved satisfactorily.

  Furthermore, the entire surface of the heat treatment surface 12a is not only uniformly heated at a predetermined temperature by performing heat treatment while moving the substrate 12, but also, for example, the substrate 12 is placed on a hot plate as in the conventional case. Compared with the case where the heat treatment is performed, a high-speed heat treatment can be realized. Further, in the second region 24, the heat treatment surface 12a is heated while scanning with the linear heating light R, so that the moving direction of the substrate 12 (in comparison with the case where the entire heat treatment surface 12a is heated at one time ( The range of the second region 24 with respect to the direction of the arrow X) can be minimized. Thereby, size reduction of the substrate heat treatment apparatus 10 can be easily achieved.

  Furthermore, in the substrate heat treatment apparatus 10 of the first embodiment, as shown in FIGS. 1 and 2, the substrate 12 is carried into the quartz tube 14 from the left side and subjected to heat treatment, and then carried out from the right side. It is configured. In this case, since the substrate heat treatment apparatus 10 can efficiently transfer the substrate 12 to the previous and subsequent processing steps, the processing efficiency can be further improved.

  The first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d need not always be supplied with a current according to the heat treatment profile shown in FIG. For example, the control unit 46 detects the position of the substrate 12 moving in the quartz tube 14 by the position detection unit 50 connected to the substrate moving unit 48. When the position detection unit 50 detects that the substrate 12 is disposed in the first region 22, the control unit 46 supplies the current i11 to the first lamp heaters 36a to 36d and the third lamp heaters 40a to 40d. To do. In addition, the control unit 46 sets the current supplied to the second lamp heaters 38a and 38b to be less than the current i21, for example, half or less of the current i21. Next, when the position detector 50 detects that the substrate 12 has moved to the second region 24, the controller 46 supplies the current i21 to the second lamp heaters 38a and 38b. In addition, the control unit 46 sets the current supplied to the first lamp heaters 36a to 36d to be less than the current i11, for example, half or less of the current i11. Further, when the position detection unit 50 detects that the substrate 12 has moved to the third region 26, the control unit 46 supplies less current to the second lamp heaters 38a and 38b than the current i21. Set to less than half of current i21.

  In this way, by controlling the current supplied to the first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d, the substrate 12 can be efficiently made with the minimum necessary current. Heat treatment can be performed. As a result, the running cost of the substrate heat treatment apparatus 10 can be reduced as much as possible.

  FIG. 10 is an explanatory diagram of the measurement results of the quartz surface temperature and the liquid crystal substrate surface temperature when the substrate heat treatment apparatus 10 of the first embodiment is applied to the skin heat treatment of the liquid crystal substrate.

  For example, when the pretreatment step for the liquid crystal substrate is a step of forming an amorphous layer on a glass substrate at 400 to 450 ° C., in the first region 22, the surface of the quartz tube 14 is heated to 300 to 450 ° C. In the second region 24, the surface of the quartz tube 14 is heated to 300 to 450 ° C., and in the third region 26, the surface of the quartz tube 14 is heated to 200 to 400 ° C. On the other hand, the liquid crystal substrate carried into the quartz tube 14 is heated to 300 to 450 ° C. in the first region 22. In the second region 24, the heat treatment surface of the skin of the liquid crystal substrate is heated to 550 to 1100 ° C. by the condensing action of the cylindrical lenses 44a to 44c. In the third region 26, the liquid crystal substrate is heated to 200 to 400 ° C. By condensing the heating light R in this way and irradiating the moving liquid crystal substrate, only the heat treatment surface of the skin of the liquid crystal substrate is heated to a desired temperature, so that the glass substrate is affected by heat. Instead, the amorphous silicon layer is skin-heated and converted to a polysilicon layer.

  11A and 11B are longitudinal sectional views of the second region 24 of a modification of the horizontal substrate heat treatment apparatus 10 according to the first embodiment.

  In FIG. 11A, the focal positions f1 to f3 of the cylindrical lenses 54a to 54c arranged in the moving direction (arrow X direction) of the substrate 12 are changed in the arrow Z direction, and the focal position f2 between the focal positions f1 and f3 is It is set so that a desired heating temperature can be obtained. When the substrate 12 moves in the direction of the arrow X, if the position of the substrate 12 changes in the Z direction, there is a risk of uneven heating on the heat treatment surface 12a. The heat treatment surface 12a of the substrate 12 is sufficiently expected to pass between the focal positions f1 to f3 by configuring the cylindrical lenses 54a to 54c as shown in FIG. 11A. Therefore, in the configuration shown in FIG. 11A, even when the substrate 12 is transferred while being moved in the direction of the arrow Z, the heat treatment surface 12a can be uniformly processed at a desired heating temperature while preventing uneven heating. .

  FIG. 11B shows a modification using the second lamp heaters 38 a and 38 b and one cylindrical lens 44. In this modification, the heating light R emitted from the upper second lamp heater 38a is condensed by only one cylindrical lens 44 disposed in the central portion in the moving direction (arrow X direction) of the substrate 12. The heat treatment surface 12a is irradiated. FIG. 8C shows the temperatures T11, T21, and T31 of the heat treatment surface 12a in the first region 22, the second region 24, and the third region 26 of the substrate 12 heated based on the modification of FIG. 11B.

  In this case, the control unit 46 sets the current supplied to the second lamp heater 38a to be large and / or sets the condensing magnification of the cylindrical lens 44 to be higher than the condensing magnification of the cylindrical lenses 44a to 44c. Thus, the heat treatment surface 12a can be heat-treated at a treatment speed equivalent to the case where the three cylindrical lenses 44a to 44c are used. Further, the heat treatment time of the substrate 12 can be shortened by shortening the moving distance of the substrate 12 by reducing the width of the second lamp heater 38a in the arrow X direction. Further, the substrate heat treatment apparatus 10 can be made compact by reducing the width of the second lamp heater 38a in the direction of the arrow X.

  Note that the line width of the heating light R formed on the heat treatment surface 12a using the second lamp heater 38a and the cylindrical lenses 44a to 44c or 44 depends on the heat treatment speed, the heating temperature, and the substrate heat treatment apparatus required for the substrate 12. 10 can be selected as appropriate according to the dimension in the direction of the arrow X required for 10. For example, the line width of the heating light R can be set small when the heat treatment surface 12a can be rapidly heated, and can be set large when rapid heating is difficult.

  Similarly, the moving speed of the substrate 12 can be appropriately selected according to the heat treatment speed and heating temperature required for the substrate 12. For example, the moving speed of the substrate 12 can be set to a low speed when it is difficult to rapidly heat the heat treatment surface 12a, and can be set to a high speed when rapid heating is possible. In addition, it is preferable to set the moving speed of the board | substrate 12 in the range of 3-30 cm / sec with respect to each board | substrate 12 of a semiconductor wafer, a liquid crystal substrate, and a solar cell substrate.

  The cylindrical lenses 44 a to 44 c, 44, 54 a to 54 c are configured to be attached to the outer wall surface 15 of the quartz tube 14, but may be attached to the inner wall surface of the quartz tube 14, and are formed integrally with the quartz tube 14. May be. Moreover, the cylindrical lenses 44a to 44c, 44, and 54a to 54c can be provided on both sides of the outer wall surface 15 and the inner wall surface. Further, the cylindrical lenses 44a to 44c, 44, and 54a to 54c have been described as having a plano-convex lens shape in cross section, but the cross sectional shape may be a biconvex lens shape.

  Further, when the cylindrical lenses 44a to 44c, 44, and 54a to 54c are configured separately from the quartz tube 14, they may be bonded to the quartz tube 14 using a heat-resistant adhesive. Further, when the cross-sectional shapes of the cylindrical lenses 44a to 44c, 44, and 54a to 54c are plano-convex lens shapes, the planar side of the cylindrical lenses 44a to 44c, 44, and 54a to 54c is formed on the outer wall surface 15 without an air layer. It is possible to realize a coupled state with the quartz tube 14 only by bringing them into close contact. Further, the cylindrical lenses 44 a to 44 c, 44, 54 a to 54 c may be integrally formed with the quartz tube 14 by processing the quartz tube 14.

  Furthermore, in the modification shown in FIG. 11A, the focal positions f1 to f3 of the cylindrical lenses 54a to 54c are made different in the arrow Z direction, so that uneven heating due to fluctuations in the vertical direction of the substrate 12 is suppressed. On the other hand, the cylindrical lenses 44a to 44c or 44, like the cylindrical lenses 54a to 54c, have a deep focal depth within an allowable range of the condensing magnification capable of sufficiently heating the heat treatment surface 12a of the substrate 12. Without setting a plurality of focal positions f1 to f3, it is possible to suppress uneven heating of the heat treatment surface 12a due to fluctuations in the vertical direction of the substrate 12.

  The heating temperature of the heat treatment surface 12a is a current supplied to the first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d in accordance with the heating profile stored in the heat treatment profile storage unit 52. Although described as controlling the moving speed of the substrate 12, the present invention is not limited to this. For example, the cylindrical lenses 44a to 44c, 44, and 54a to 54c may be replaced with lenses having different magnifications according to the required heating temperature of the heat treatment surface 12a.

  In the first region 22 and the third region 26, the heating means used for heating the substrate 12 may be, for example, an electric resistance instead of the first lamp heaters 36a to 36d and the third lamp heaters 40a to 40d. A heater or the like can also be used.

[Second Embodiment]
FIG. 12 is a longitudinal sectional view of the vertical substrate heat treatment apparatus 60 of the second embodiment. In the substrate heat treatment apparatus 60, heat treatment can be performed on the substrate 12 which is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate.

  The substrate heat treatment apparatus 60 is configured by arranging quartz tubes 62 that form heating spaces for heating two substrates 12 at the same time in an upright state. The quartz tube 62 is closed at the upper end, and forms a flat furnace that accommodates the two substrates 12 in an upright state. The two substrates 12 are fixed in a state of being clamped by the substrate holder 64 with the heat treatment surface 12a facing the facing quartz tube 62 side, and are disposed so as to be lifted and lowered in the direction of arrow Z by the lifter 68 via the bottom plate 66. . A gas blower 70 for supplying atmospheric gas or purge gas is disposed in the quartz tube 62.

  The first lamp heaters 74a and 74b for heating the first region 72, the second lamp heaters 78a and 78b for heating the second region 76, and the auxiliary region 80 are heated on the outer wall portion of the quartz tube 62 from below. Auxiliary lamp heaters 82a and 82b are arranged. Cylindrical lenses 84a to 84c and 86a to 86c are mounted on the outer wall surfaces 63a and 63b of the quartz tube 62 so as to face the second lamp heaters 78a and 78b. The cylindrical lenses 84a to 84c and 86a to 86c have a characteristic of condensing the heating light R emitted from the second lamp heaters 78a and 78b in the arrow Z direction. The cylindrical lenses 84a to 84c and 86a to 86c extend in a direction parallel to the heat treatment surface 12a of the substrate 12 and perpendicular to the moving direction of the substrate 12 (arrow Z direction).

  In the substrate heat treatment apparatus 60, the first region 72 corresponds to the first region 22 and the third region 26 of the substrate heat treatment apparatus 10 of the first embodiment, and the second region 76 is the substrate heat treatment of the first embodiment. This corresponds to the second region 24 of the device 10. The auxiliary region 80 is a region for maintaining the temperature on the upper end side of the substrate 12 transported to the second region 76 at a predetermined heating temperature, and may be omitted depending on the temperature condition.

  The two substrates 12 fixed to the substrate holder 64 are carried into the first region 72 on the lower end side in the vertical direction, and in the first region 72, preheating is performed by the heating light R emitted from the first lamp heaters 74a and 74b. Is done. Next, the substrate 12 moves to the second region 76 on the upper end side in the vertical direction. In the second region 76, the heating light R emitted from the second lamp heaters 78a and 78b is condensed by the cylindrical lenses 84a to 84c and 86a to 86c, and is irradiated onto each substrate 12. As a result, the heat treatment surfaces 12 a of the two substrates 12 are simultaneously heat-treated at a desired heating temperature higher than that of the first region 72. During the heat treatment, the auxiliary lamp heaters 82a and 82b maintain the temperature of the upper auxiliary region 80 at a predetermined temperature. When the heat treatment in the second region 76 is completed, the substrate 12 is again lowered to the first region 72 and heated, and then carried out to the outside, thereby completing the heat treatment.

  As described above, since the substrate heat treatment apparatus 60 performs the heat treatment by reciprocating the substrate 12 up and down, the apparatus can be downsized in the height direction with the upper auxiliary region 80 as a necessary minimum range. be able to. In addition, since the movement distance of the substrate 12 is shortened, the processing time required for the heat treatment is also shortened. Furthermore, since the substrate heat treatment apparatus 60 is a vertical type, there is an advantage that the occupied floor area is reduced.

  Note that the substrate heat treatment apparatus 60 of the second embodiment can be variously modified in the same manner as the substrate heat treatment apparatus 10 of the first embodiment.

  For example, the first lamp heaters 74a and 74b, the second lamp heaters 78a and 78b, and the auxiliary lamp heaters 82a and 82b control the current supplied in accordance with the position of the substrate 12, so that the substrate 12 has a minimum necessary current. Can be efficiently heat-treated.

  Further, the cylindrical lenses 84a to 84c and 86a to 86c for condensing the heating light R emitted from the second lamp heaters 78a and 78b have different focal positions as in the cylindrical lenses 54a to 54c shown in FIG. 11A. Thus, the uneven heating of the heat treatment surface 12a due to the position change during the movement of the substrate 12 can be suppressed.

  Further, the number of the cylindrical lenses 84a to 84c and 86a to 86c can be appropriately changed according to the required line width of the heating light R applied to the substrate 12 and the required moving speed of the substrate 12. In addition, it is preferable to set the moving speed of the board | substrate 12 in the range of 3-30 cm / sec with respect to each board | substrate 12 of a semiconductor wafer, a liquid crystal substrate, and a solar cell substrate.

  Further, the cylindrical lenses 84 a to 84 c and 86 a to 86 c are attached to the inner wall surface of the quartz tube 62, attached to both the outer wall surfaces 63 a and 63 b and the inner wall surface, or formed integrally with the quartz tube 62. Also good. The cylindrical lenses 84a to 84c and 86a to 86c may have a plano-convex lens shape or a biconvex lens shape as in the first embodiment.

  Furthermore, as a heating means for heating the substrate 12 in the first region 72 and the auxiliary region 80, for example, an electric resistance heater or the like is used instead of the first lamp heaters 74a and 74b and the auxiliary lamp heaters 82a and 82b. You can also

[Third Embodiment]
FIG. 13 is a longitudinal sectional view of a horizontal substrate heat treatment apparatus 200 of the third embodiment. The substrate heat treatment apparatus 200 can perform heat treatment on the substrate 12 that is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate.

  The substrate heat treatment apparatus 200 is an apparatus that horizontally moves the substrate 12 in the arrow X direction with the heat treatment surface 12a facing vertically downward, and heat-treats the heat treatment surface 12a of the substrate 12 from vertically downward. The substrate heat treatment apparatus 200 includes a quartz tube 214 and gates 216 a and 216 b disposed at both ends of the quartz tube 214. The substrate 12 is held around the heat treatment surface 12a by the substrate holder 220 fixed to the end of the rod 218, and moves in the direction of the arrow X in the quartz tube 214.

  In the quartz tube 214, a first region 222 for heating the substrate 12 to a preheating temperature (first temperature), a second region 224 for heating the heat treatment surface 12a to an annealing temperature (second temperature), and the substrate 12 are assisted. A third region 226 that is heated to the heating temperature (third temperature) is formed. The temperatures of the heat treatment surfaces 12a in the first region 222, the second region 224, and the third region 226 are detected by temperature detectors 228, 230, and 234. In addition, a gas blower 234 for supplying atmospheric gas or purge gas is disposed inside the quartz tube 214. In the vicinity of the upper and lower outer wall portions of the quartz tube 14 in the first region 222, the second region 224, and the third region 226, the first lamp heaters 236a, 236b (first heating means), the second lamp heaters 238a, 238b (first 2 heating means) and third lamp heaters 240a and 240b (third heating means).

  On the inner wall surface 215 of the quartz tube 214 in the second region 224, a plurality of cylindrical lenses 244a to 244c (condensing lenses) are disposed below the substrate 12 and heat the heat treatment surface 12a from vertically downward. The The cylindrical lenses 244a to 244c are parallel to the heat treatment surface 12a of the substrate 12 and extend in a horizontal direction orthogonal to the arrow X direction. The cylindrical lenses 244a to 244c have a condensing characteristic only in a direction perpendicular to the extending direction, and irradiate the heat treatment surface 12a with the heating light R in a direction perpendicular to the moving direction (arrow X direction) of the substrate 12. To do.

  In the substrate heat treatment apparatus 200 configured as described above, the substrate 12 is carried into the first region 222 via the gate 216 a of the quartz tube 214. The substrate 12 carried into the first region 222 is heated to the preheating temperature by the first lamp heaters 236a and 236b. Next, the substrate 12 moves to the second region 224, and the upper surface side of the substrate 12 is heated by the second lamp heater 238a. Further, in the second region 224, the heat treatment surface 12a of the substrate 12 moving in the arrow X direction is annealed from the vertically downward direction by the heating light R from the second lamp heater 238b collected by the cylindrical lenses 244a to 244c. Until heated.

  In this case, the atmosphere in the quartz tube 214 heated by the heating light R in the quartz tube 214 tends to rise because it expands. However, since the heated atmosphere is blocked by the substrate 12 and does not escape upward, it remains on the heat treatment surface 12a on the lower surface. Therefore, the diffusion of heat due to the rise in the heated atmosphere is suppressed by the substrate 12, and the heat treatment surface 12a is efficiently heated by the heating light R. Further, since the heated atmosphere stays on the heat treatment surface 12a, a large temperature gradient does not occur along the heat treatment surface 12a. As a result, the heat-treated surface 12a is skin-heated uniformly in a short time to a desired annealing temperature with a small amount of heating energy.

  In the second region 224, the substrate 12 whose entire surface of the heat treatment surface 12a is heated to a desired annealing temperature moves to the third region 226. Next, after the substrate 12 is heated to the auxiliary heating temperature in the second region 224, it is carried out to the next processing step through the gate 216b. In addition, it is preferable to set the moving speed of the board | substrate 12 in the range of 3-30 cm / sec with respect to each board | substrate 12 of a semiconductor wafer, a liquid crystal substrate, and a solar cell substrate.

[Fourth Embodiment]
FIG. 14A is a longitudinal section of a horizontal substrate heat treatment apparatus 250 of the fourth embodiment. The substrate heat treatment apparatus 250 can perform heat treatment on the substrate 12 that is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate.

  The substrate heat treatment apparatus 250 is an apparatus that supports the substrate 12 in a vertical state, moves the inside of the quartz tube 252 in the horizontal direction, and heat-processes the heat treatment surface 12a from the horizontal direction. A gas blower 253 for supplying atmospheric gas or purge gas is disposed in the upper part of the quartz tube 252. On both sides of the quartz tube 252 in the first region, the second region, and the third region from the carry-in side to the carry-out side of the substrate 12, there are a first lamp heater 254a, 254b (first heating means), a second lamp heater 256a. 256b (second heating means) and third lamp heaters 258a, 258b (third heating means) are sequentially arranged. Between the second lamp heater 256 b and the quartz tube 252 in the second region, three cylindrical lenses 260 a to 260 c that heat the heat treatment surface 12 a from the horizontal direction are arranged in the moving direction of the substrate 12. The cylindrical lenses 260a to 260c are attached to the outer wall surface 252a of the quartz tube 252 so as to extend in the vertical direction. The cylindrical lenses 260a to 260c have a condensing characteristic only in a direction orthogonal to the extending direction, and irradiate the heat treatment surface 12a with the heating light R in a direction orthogonal to the moving direction of the substrate 12.

  In the substrate heat treatment apparatus 250 configured as described above, the substrate 12 is carried into the quartz tube 252 in a vertical state, and is preliminarily set at the first temperature by the heating light R emitted from the first lamp heaters 254a and 254b. Heated to heating temperature. Next, the substrate 12 moves between the second lamp heaters 256a and 256b, and is heated from the horizontal direction by the heating light R emitted from the second lamp heaters 256a and 256b. The heating light R emitted from the second lamp heater 256b is collected by the cylindrical lenses 260a to 260c, and heats the heat treatment surface 12a of the substrate 12 to an annealing temperature that is a second temperature higher than the preheating temperature. The substrate 12 having the heat treatment surface 12a heated to the annealing temperature moves between the third lamp heaters 258a and 258b, and the auxiliary heating temperature which is the third temperature by the heating light R emitted from the third lamp heaters 258a and 258b. After being heated, the quartz tube 252 is carried out.

  The substrate heat treatment apparatus 250 can efficiently heat-treat the heat treatment surface 12a by supporting the substrate 12 in an upright state, moving the inside of the quartz tube 252 in the horizontal direction, and heating the heat treatment surface 12a from the horizontal direction. it can. That is, since the atmosphere heated by the heating light R rises along the heat treatment surface 12a, the heated atmosphere does not diffuse from the heat treatment surface 12a, and the heat treatment surface 12a is efficiently skin-heated. In addition, since the substrate heat treatment apparatus 250 conveys the substrate 12 in an upright state, the substrate 12 is not bent by its own weight, and the heat treatment surface 12a can be heated uniformly, and the occupied floor according to the size of the substrate 12 can be used. There is no risk of increasing the area. In addition, it is preferable to set the moving speed of the board | substrate 12 in the range of 3-30 cm / sec with respect to each board | substrate 12 of a semiconductor wafer, a liquid crystal substrate, and a solar cell substrate.

[Fifth Embodiment]
FIG. 14B is a longitudinal section of a horizontal substrate heat treatment apparatus 270 of the fifth embodiment. The substrate heat treatment apparatus 270 can perform heat treatment on the substrate 12 that is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate.

  The substrate heat treatment apparatus 270 is an apparatus in which the substrate heat treatment apparatus 250 of the fourth embodiment is inclined by an angle θ toward the heat treatment surface 12a side of the substrate 12 with respect to the vertical direction (arrow Z direction). Therefore, the cylindrical lenses 260a to 260c are disposed to be inclined at the lower portion of the substrate 12 and heat the heat treatment surface 12a from obliquely downward. In addition, the same referential mark is attached | subjected to the component same as the substrate heat processing apparatus 250, and the description is abbreviate | omitted.

  In the substrate heat treatment apparatus 270, the substrate 12 moves in the horizontal direction while being inclined by an angle θ toward the heat treatment surface 12a, and in the inclined state, the first lamp heaters 254a, 254b, the second lamp heaters 256a, 256b, and Heat treatment is performed by the third lamp heaters 258a and 258b. In this case, the atmosphere heated by the heating light R rises along the heat treatment surface 12a of the substrate 12 inclined downward with respect to the vertical direction. Further, since the substrate 12 is disposed on the heat treatment surface 12a side by being inclined by an angle θ, the atmosphere rising along the heat treatment surface 12a is the same as that of the substrate 12 disposed in an upright state in the fourth embodiment. The residence time on the heat treatment surface 12a is longer than the case, and diffusion is also suppressed. Accordingly, the heat-treated surface 12a is more efficiently skin-heated by the heating light R. In addition, it is preferable to set the moving speed of the board | substrate 12 in the range of 3-30 cm / sec with respect to each board | substrate 12 of a semiconductor wafer, a liquid crystal substrate, and a solar cell substrate.

[Sixth Embodiment]
FIG. 15 is a longitudinal sectional view parallel to the surface of the semiconductor wafer of the vertical substrate heat treatment apparatus 100 of the sixth embodiment. FIG. 16A is a longitudinal sectional view orthogonal to the surface of the semiconductor wafer 105 of the vertical substrate heat treatment apparatus 100 of the sixth embodiment, and FIG. 16B is a first view of the vertical substrate heat treatment apparatus 100 of the sixth embodiment. It is explanatory drawing of the furnace temperature in the area | region 120, the 2nd area | region 130, and the 3rd area | region 140. FIG.

  15, 16 </ b> A, and 16 </ b> B, reference numeral 101 is a flat furnace according to the sixth embodiment, reference numeral 102 is a furnace body made of a refractory / heat insulating material, and reference numeral 103 is an electric resistance connected to a power source. Heater or lamp heater, reference numeral 104 is a quartz tube, reference numerals 113 and 115 are lamp heaters connected to a power source, reference numeral 120 is a first area, reference numeral 130 is a second area, reference numeral 140 is , The third region. The size of the semiconductor wafer 105 is not particularly limited, but currently 12 to 18 inches are often used. FIG. 15 is a cross-sectional view of the flat furnace cut along the surface of the semiconductor wafer 105 (the main surface on which the device is formed), and FIG. 16A is a cross-sectional view orthogonal thereto, the latter being the former with respect to the width of the furnace. The semiconductor wafer 105 is uniformly heated by bringing the heater as close to the surface of the semiconductor wafer 105 as possible.

  Since the semiconductor wafer 105 passes through the second region 130 without being stationary, it is not necessary to heat the circumferential edge of the semiconductor wafer 105. In FIG. 15, the lamp heater is not disposed on the side where the flat furnace is narrow. On the other hand, since the semiconductor wafer 105 is stationary in the first region 120 and the third region 140, the heaters 103 and 115 are arranged on the entire surface of the furnace in order to ensure a uniform heating state.

  An atmosphere gas or a purge gas is supplied from the gas blower 123 into the furnace, and the gas generated from the surface of the semiconductor wafer 105 due to the annealing is released from the bottom to the outside of the furnace. The flow rate of this gas is small enough not to affect the temperature distribution.

  FIG. 16B shows the temperature distribution created in the furnace immediately after the preheating is completed. The temperature distribution of the first region 120 is indicated by 20T and corresponds to the first temperature. In addition, since the annealed semiconductor wafer 105 does not need to be preheated, when the lamp heater 115 is shut off, the temperature distribution in the first region 120 drops toward the furnace insertion side as 20 T ′, The semiconductor wafer 105 can be cooled rapidly.

  The most characteristic point of the sixth embodiment is a temperature distribution 30T formed in the second region 130 in which the semiconductor wafer 105 is moving, and a peak temperature 30P of the temperature distribution 30T is a crystal defect improvement temperature 850 to 1100. It falls within the range of 500 ° C. or 750 ° C. that is the insulating film reforming temperature, and is continuously connected to the temperature distributions 20T and 40T. In order to create the temperature distribution 30T having such a profile, it is possible to increase the arrangement density of the lamp heaters 113 near the peak temperature 30P and / or increase the electric power.

  The edge of the semiconductor wafer 105 is held by a jig composed of a plurality of claws 107 projecting inward from the U-shaped support 106 and the upper fixing plate 108, and a lifter that slidably penetrates the bottom plate 119. The inside of the furnace is moved by 117. The support jig for the semiconductor wafer 105 made up of these members 106, 107, 108, 117 is made of a thin material with good thermal conductivity so that the heat capacity is as small as possible. In addition, since the semiconductor wafer 105 is preferably heated uniformly in the first region 120, there is almost no heat transfer at the contact portion between the semiconductor wafer 105 and the jig during annealing in the second region 130.

By the way, assuming that the semiconductor wafer 105 moving in the second region 130 stops instantaneously, the temperature distribution of one semiconductor wafer 105 is a profile similar to the temperature distribution 30T, and is slightly different from the temperature distribution 30T. It is considered that the temperature is low. Accordingly, the semiconductor wafer 105 passing through the second region 130 is annealed at a temperature slightly lower than the peak temperature 30P sequentially. That is, the annealing time is a time for passing the peak temperature 30P. The above-mentioned moving speed of the semiconductor wafer 105 determines the annealing time and is considered to be about 0.1 second or more.
The temperature distribution 30T ′ is a temperature distribution when no current from the power source is supplied to the lamp heater 113 in the second region 30.

  FIG. 17 is an enlarged cross-sectional view of the lamp heaters 113 and 115 used in the vertical substrate heat treatment apparatus 100 of the sixth embodiment. Reference numeral 131 is a halogen gas enclosure, reference numeral 132 is a tungsten heater, reference numeral 133 is a quartz plate, reference numeral 134 is a gold reflecting film, and reference numeral 135 is a socket.

  18A and 18B are explanatory diagrams of the operation of the heater when the semiconductor wafer 105 moves forward and backward in the vertical substrate heat treatment apparatus 100 of the sixth embodiment.

  FIG. 18A and FIG. 18B show that in the substrate heat treatment apparatus 100 of the sixth embodiment, the heaters in the respective regions are turned on depending on whether the semiconductor wafer 105 is located in the first region 120, the second region 130, or the third region 140. Indicates whether to be in a heated state or unheated state.

  Further, as shown in FIGS. 15 and 16A, when the semiconductor wafer 105 is configured to move forward / backward in the furnace, in the backward step, all the heaters are disconnected from the power source and the semiconductor wafer 105 is disconnected. It can be simply taken out of the furnace. If there is a surplus in the thermal budget, additional high temperature heating can be applied during the retraction phase.

  In FIG. 18B, the processing different from the case of forward movement is as follows. First, by heating in the first region 120, the semiconductor wafer 105 can be maintained at an intermediate temperature between the high-temperature heat treatment temperature and the outside temperature of the furnace. Further, the semiconductor wafer 105 can be taken out without holding the temperature. When the first region 120 is heated to 700 to 850 ° C. when the semiconductor wafer 105 is disposed in the third region 140, the semiconductor wafer 105 is subjected to the same crystal defect improvement treatment twice as in the forward stage in the same furnace. Next, the semiconductor wafer 105 does not need to be heated in the third region 140 where the semiconductor wafer 105 is not disposed. However, if the next semiconductor wafer 105 is scheduled to be processed, the semiconductor wafer 105 is heated to increase productivity. It is preferable.

Although the sixth embodiment in which one semiconductor wafer 105 is heated on both sides in the vertical furnace has been described above, it is obvious that the following modifications can be made.
(A) The vertical furnace is configured such that the lamp heater 113 on one side of FIG. 16A is removed and only one side on which the semiconductor device is formed is heated.
(B) The vertical furnace is arranged so that the back surfaces of the two semiconductor wafers 105 face each other.
(C) The vertical furnace will replace the horizontal furnace.
(D) In the horizontal furnace, the first region 120 is on the inlet side, and the third region 140 is on the outlet side.

  The present invention can be used in place of FLA using a hot plate currently employed and contribute to heat treatment of a semiconductor wafer.

  In addition, this invention is not limited to embodiment mentioned above, It is possible to change in the range which does not deviate from the main point of this invention.

10, 60, 100, 200, 250, 270 ... substrate heat treatment apparatus 12 ... substrate 12a ... heat treatment surfaces 14, 62, 104, 214, 252 ... quartz tubes 15, 63a, 63b ... outer wall surfaces 16a, 16b, 216a, 216b ... Gate 18, 218 ... Rod 20, 64 ... Substrate holder 22, 72, 120, 222 ... First region 24, 76, 130, 224 ... Second region 26, 140, 226 ... Third region 28, 30, 32, 228 , 230, 232 ... temperature detectors 34, 70, 123, 234, 253 ... gas blowers 36a to 36d, 74a, 74b, 236a, 236b, 254a, 254b ... first lamp heaters 38a, 38b, 78a, 78b, 238a 238b, 256a, 256b, second lamp heaters 40a to 40d, 240a, 240b, 258a, 258 Third lamp heater 42 Halogen lamps 44, 44a to 44c, 54a to 54c, 84a to 84c and 86a to 86c, 244a to 244c, 260a to 260c ... Cylindrical lens 46 ... Control unit 48 ... Substrate moving unit 50 ... Position detection Section 52 ... Heat treatment profile storage section 66 ... Bottom plate 68, 117 ... Lifter 80 ... Auxiliary regions 82a, 82b ... Auxiliary lamp heater 101 ... Flat furnace 102 ... Furnace body 103 ... Electric resistance heater or lamp heater 105 ... Semiconductor wafer 106 ... U Character-shaped support 107 ... Claw 108 ... Upper fixing plate 113, 115 ... Lamp heater 119 ... Bottom plate 131 ... Halogen gas enclosure 132 ... Tungsten heater 133 ... Quartz plate 134 ... Gold reflection film 135 ... Socket R ... Heating light r ... Radiation light

Claims (23)

A first region for heating a substrate which is a semiconductor wafer, a liquid crystal substrate or a solar cell substrate to a first temperature;
A second region for heating the substrate heated to the first temperature to a second temperature;
A third region for heating the substrate heated to the second temperature to a third temperature;
First heating means for heating the substrate in the first region;
Second heating means that is a lamp heater that emits heating light for heating the substrate in the second region;
A third heating means for heating the substrate in the third region;
A moving unit for moving the substrate from the first region to the third region via the second region;
The heating device is disposed between the second heating means and the substrate in the second region, extends in a direction parallel to the surface of the substrate and perpendicular to the moving direction of the substrate, and emits the heating light to the substrate. A condenser lens that irradiates the substrate in a direction orthogonal to the moving direction and heats the substrate;
A heat treatment profile storage unit for storing a heat treatment profile including a current supplied to the first heating unit, the second heating unit, and the third heating unit, and a moving speed of the substrate by the moving unit;
In accordance with the heat treatment profile, the first heating unit, the second heating unit, and the third heating unit are controlled, and a controller that controls the movement of the substrate;
A substrate heat treatment apparatus comprising: The substrate heat treatment apparatus according to claim 1,
When the substrate is the semiconductor wafer, the first temperature is set in a range of 300 to 450 ° C. and the second temperature is set to 800 to improve crystal defects of the semiconductor wafer subjected to ion implantation. The substrate heat treatment apparatus is set to a range of 1100 ° C., and the third temperature is set to a range of 200 to 400 ° C. The substrate heat treatment apparatus according to claim 1,
When the substrate is the semiconductor wafer, the first temperature is 200 to 450 ° C. in order to improve the film quality defect of the film generated on the semiconductor wafer by any one of a CVD process, a sputtering process, and a vapor deposition process. The substrate heat treatment apparatus is set to a range, the second temperature is set to a range of 300 to 900 ° C, and the third temperature is set to a range of 200 to 400 ° C. The substrate heat treatment apparatus according to claim 1,
When the substrate is the liquid crystal substrate, the first temperature is set in the range of 300 to 450 ° C. and the second temperature is in the range of 550 to 1100 ° C. in order to change the amorphous silicon layer to the polysilicon layer. And the third temperature is set in a range of 200 to 400 ° C. In the substrate heat treatment apparatus according to any one of claims 1 to 4,
The substrate comprises a horizontal heating furnace that carries the substrate into the first region on one end side, and horizontally unloads the substrate from the third region on the other end side through the second region. Heat treatment equipment. The substrate heat treatment apparatus according to claim 5,
The condensing lens is disposed below the substrate, and the substrate moving in the second region with the heat treatment surface down is moved vertically from the downward direction by the heating light condensed by the condensing lens. A substrate heat treatment apparatus characterized by heating the skin. The substrate heat treatment apparatus according to claim 5,
The condensing lens is arranged in a vertical state, and heat-treats the substrate from the horizontal direction with the heating light condensed by the condensing lens on the heat treatment surface of the substrate. The substrate heat treatment apparatus according to claim 5,
The condenser lens is disposed at a lower portion of the substrate, and the substrate moving in the second region with the heat treatment surface obliquely downward is moved by the heating light collected by the condenser lens. A substrate heat treatment apparatus that heats the skin from an obliquely downward direction. In the substrate heat treatment apparatus according to any one of claims 1 to 4,
The substrate is carried into the first region on the lower end side in the vertical direction, and the substrate is taken from the third region on the lower end side in the vertical direction, which is common to the first region, through the second region on the upper end side in the vertical direction. A substrate heat treatment apparatus comprising a vertical heating furnace to be carried out. Carrying a substrate which is a semiconductor wafer, a liquid crystal substrate or a solar cell substrate into the first region, supplying a current based on the heat treatment profile to the first heating means, and heating the substrate to a first temperature;
The substrate is carried from the first region to the second region, the substrate is moved at a moving speed based on the heat treatment profile, and an electric current based on the heat treatment profile is supplied to the second heating means that is a lamp heater, The heating light emitted from the second heating means is orthogonal to the movement direction of the substrate with respect to the substrate through a condensing lens extending in a direction parallel to the surface of the substrate and perpendicular to the movement direction of the substrate. Irradiating in a direction to perform, and heating the substrate to the second temperature,
Carrying the substrate from the second region to the third region, supplying a current based on a heat treatment profile to a third heating means, and heating the substrate to a third temperature;
And the heat treatment profile includes a current supplied to the first heating means, the second heating means, and the third heating means, and a moving speed of the substrate. The substrate heat treatment method according to claim 10,
When the substrate is the semiconductor wafer, the first temperature is set in a range of 300 to 450 ° C. and the second temperature is set to 800 to improve crystal defects of the semiconductor wafer subjected to ion implantation. A substrate heat treatment method, wherein the temperature is set in a range of 1100 ° C., and the third temperature is set in a range of 200 to 400 ° C. The substrate heat treatment method according to claim 10,
When the substrate is the semiconductor wafer, the first temperature is 200 to 450 ° C. in order to improve the film quality defect of the film generated on the semiconductor wafer by any one of a CVD process, a sputtering process, and a vapor deposition process. A substrate heat treatment method characterized in that the second temperature is set in a range of 300 to 900 ° C., and the third temperature is set in a range of 200 to 400 ° C. The substrate heat treatment method according to claim 10,
When the substrate is the liquid crystal substrate, the first temperature is set in a range of 300 to 450 ° C. and the second temperature is 550 to 1100 ° C. in order to convert an amorphous silicon layer into a polysilicon layer. The substrate heat treatment method is set to a range, and the third temperature is set to a range of 200 to 400 ° C. In the substrate heat processing method of any one of Claims 10-13,
The substrate heat treatment method, wherein the substrate is carried into the first region on one end side and unloaded from the third region on the other end side through the second region in the horizontal direction. The substrate heat treatment method according to claim 14,
The substrate is moved in the second region with the heat treatment surface down, and the heat treatment surface is heated from the vertically downward direction by the heating light condensed by the condenser lens disposed below the substrate. And a substrate heat treatment method. The substrate heat treatment method according to claim 14,
The substrate is moved in the second region with the heat treatment surface in a vertical state, and the heat treatment surface is heated from the horizontal direction by the heating light condensed by the condenser lens arranged in the vertical state. A substrate heat treatment method. The substrate heat treatment method according to claim 14,
The substrate is moved in the second region with the heat treatment surface obliquely downward, and the heat treatment surface is obliquely lowered by the heating light condensed by the condenser lens arranged to be inclined below the substrate. A substrate heat treatment method comprising heating the skin from a direction. In the substrate heat processing method of any one of Claims 10-13,
The substrate is carried into the first region on the lower end side in the vertical direction, and is unloaded from the third region on the lower end side in the vertical direction, which is common to the first region, through the second region on the upper end side in the vertical direction. And a substrate heat treatment method.   A substrate heat treatment method for performing heat treatment for improving crystal defects of an ion-implanted semiconductor wafer by moving the upright semiconductor wafer in a heating furnace in a direction along the surface of the semiconductor wafer, and (A) Crystal defect improvement A first region in which a first lamp heater that heats the inside of the heating furnace to preheat the semiconductor wafer to a temperature lower than the temperature of the first region (hereinafter referred to as “first temperature”), (B) the first region A second temperature for generating a temperature within the range of 850 to 1100 ° C. (hereinafter referred to as “second temperature”) in the heating furnace in order to improve crystal defects between (A) and the following third region (C). A second region in which the lamp heater is disposed, and (C) a third region in which the heater for heating the inside of the heating furnace is disposed at a temperature within a range of 650 to 800 ° C. (hereinafter referred to as “third temperature”). Arranged in the furnace, The temperature profile in the moving direction of the semiconductor wafer moving in the second region is set so that the temperature gradually decreases from the peak temperature within the second temperature range and continues to the first temperature and the third temperature. In the second lamp heater, only during the period in which the semiconductor wafer preheated in the first region (A) passes through the second region (C) immediately before moving to the second region (C). A substrate heat treatment method, wherein an electric current is passed to generate the temperature profile. The substrate heat treatment method according to claim 19,
A method of performing a modification treatment of an oxide film, a nitride film, and a W film formed by CVD, sputtering or vapor deposition in a temperature range of 200 to 400 ° C. in place of the heat treatment for crystal defect improvement, 2. A substrate heat treatment method, wherein the second temperature is 500 to 750 ° C. and the third temperature is 200 to 450 ° C. The substrate heat treatment method according to claim 19 or 20,
A substrate heat treatment method, wherein a furnace inner wall width in a direction parallel to the surface of the semiconductor wafer is larger than a furnace inner wall width in a direction orthogonal to the parallel direction in a cross-sectional view in the major axis direction of the heating furnace. The substrate heat treatment method according to any one of claims 19 to 21,
A substrate heat treatment method, wherein the semiconductor wafer is held in the first region and the third region and soaked to the first temperature and the third temperature, respectively. The substrate heat treatment method according to any one of claims 19 to 22,
Holding the semiconductor wafer in the third region and soaking it to the third temperature, and then interrupting the current to the first lamp heater immediately before moving from the second region to the first region; A substrate heat treatment method characterized by the above.

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