JPWO2006006368A1 - Method for manufacturing thin film photoelectric conversion device - Google Patents

Abstract

Provided is a method for producing a p-type layer of a silicon-based thin-film photoelectric conversion device that suppresses reduction of a transparent conductive oxide layer and has good performance. The method for manufacturing a silicon-based thin film photoelectric conversion device according to the present invention is arranged in the order of a transparent conductive oxide layer, a p-type semiconductor layer, a substantially intrinsic semiconductor photoelectric conversion layer, and an n-type semiconductor layer as viewed from the light incident side. The p-type layer is formed by a plasma CVD method using a diluent gas containing at least a silane-based gas and hydrogen, and the pressure during the formation is 2 Torr or more and 5 Torr or less. The flow rate ratio of the dilution gas to the silane-based gas is 5 to 50 times.

Description

  The present invention relates to a method for manufacturing a thin film photoelectric conversion device, and more particularly to a method for manufacturing a silicon thin film photoelectric conversion device including an amorphous silicon photoelectric conversion layer. Note that the terms “crystalline” and “microcrystal” in the present specification include those that partially contain amorphous material.

  In recent years, in order to achieve both cost reduction and high efficiency of a photoelectric conversion device, a thin film photoelectric conversion device that has almost no problem in terms of resources has attracted attention and has been vigorously developed. Thin film photoelectric conversion devices are expected to be applied to various applications such as solar cells, optical sensors, and displays. An amorphous silicon photoelectric conversion device, which is one of thin film photoelectric conversion devices, can be formed on a large-area glass substrate or stainless steel substrate at a low temperature, so that cost reduction can be expected.

  The thin film photoelectric conversion device generally includes a first electrode, a surface of which is laminated in order on an insulating substrate, one or more semiconductor thin film photoelectric conversion units, and a second electrode. One thin film photoelectric conversion unit includes an i-type photoelectric conversion layer which is a substantially intrinsic semiconductor photoelectric conversion layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. Here, the photoelectric conversion unit or the thin film solar cell has an amorphous i-type photoelectric conversion layer that occupies the main part regardless of whether the p-type and n-type semiconductor layers contained therein are amorphous or crystalline. Is called an amorphous photoelectric conversion unit or an amorphous thin-film solar cell, and an i-type photoelectric conversion layer is crystalline is called a crystalline photoelectric conversion unit or a crystalline thin-film solar cell.

  The p-type semiconductor layer and the n-type semiconductor layer play a role of generating a diffusion potential in the photoelectric conversion unit, and the value of the open end voltage, which is an important characteristic of the photoelectric conversion device, is influenced by the magnitude of the diffusion potential. . In the most common amorphous silicon-based thin film photoelectric conversion device among thin film photoelectric conversion devices, in order to reduce the optical absorption loss in the p-type layer by expanding the optical forbidden bandwidth of the p-type layer A high-frequency plasma CVD method is used when forming the p-type layer, and amorphous silicon carbide is obtained by using a hydrocarbon-based gas such as methane or ethylene together with a doping gas such as silane-based gas, hydrogen gas, and diborane as a source gas. It is common. The pressure in the reaction chamber when forming the p-type layer is usually about 1 Torr or less.

  For example, Patent Document 1 describes a method for forming a p-type semiconductor layer of an amorphous silicon-based thin film photoelectric conversion device. In the example of this document, a p-type semiconductor of an amorphous silicon-based photoelectric conversion device is described. It has been shown that the layer is formed by plasma CVD with a pressure in the reaction chamber of 1 Torr.

  A method for manufacturing a silicon-based photoelectric conversion device under relatively high pressure conditions is disclosed in Patent Document 2, for example. In this document, the pressure of the i-type photoelectric conversion layer, i / n interface layer, and p / i interface layer in the amorphous silicon photoelectric conversion device is 0.5 Torr or more, and the substrate temperature is higher than 80 ° C. and lower than 250 ° C. Although it is shown that the film is formed under conditions, the above formation method is intended to improve the photoelectric conversion layer, and there is no description that it can be applied to a conductive type layer such as a p-type layer.

Further, Patent Document 3 shows that an amorphous silicon thin film photoelectric conversion device is formed under a relatively high pressure condition. In this document, each semiconductor layer of an amorphous silicon-based photoelectric conversion device has a partial pressure of a silane-based gas, which is a raw material gas among reaction gases, set to 1.2 Torr to 5.0 Torr and an inter-electrode distance of 8 mm to 15 mm. Although it is described that the characteristics after irradiation of the amorphous silicon-based thin film photoelectric conversion device are improved by manufacturing under the following conditions, in this document, the flow rate ratio of a dilution gas such as hydrogen to the source gas is 4 times or less. And limited to low conditions.
JP-A-5-326992 JP 9-512665 gazette JP 2000-252484 A

When a transparent substrate is used as an insulating substrate in a silicon-based thin film photoelectric conversion device, a transparent conductive oxide layer such as tin oxide (SnO ₂ ) is generally used for the first electrode laminated thereon. When a p-type layer is directly deposited on such a transparent conductive oxide layer, a plasma that is highly reducible by a large amount of hydrogen ions when formed by plasma CVD using a silane-based gas diluted at high magnification with hydrogen gas or the like. It becomes a condition, and the transparent conductive oxide layer is reduced and its transparency is lowered. In addition, if a p-type layer is deposited on the transparent conductive oxide layer under plasma conditions with low reducing properties, such as reducing the flow rate of dilution gas such as hydrogen gas to silane gas, decomposition of doping gas such as hydrocarbon gas and diborane Is not promoted, and physical properties such as electrical conductivity and optical forbidden band width are reduced, so that the characteristics of the photoelectric conversion device are deteriorated.

  In view of the problems as described above, an object of the present invention is to provide a method for producing a p-type layer of a photoelectric conversion device having good performance while suppressing reduction of a transparent conductive oxide layer used as an underlayer. It is said.

  The silicon-based thin film photoelectric conversion device according to the present invention is a photoelectric conversion device in which a transparent conductive oxide layer, a p-type semiconductor layer, a substantially intrinsic semiconductor photoelectric conversion layer, and an n-type semiconductor layer are arranged in this order from the light incident direction. The p-type layer is formed by a plasma CVD method using a dilute gas containing at least a silane-based gas and hydrogen, and the formation pressure is in the range of 2 Torr to 5 Torr, and the silane-based gas The flow rate ratio of the dilution gas to is not less than 5 times and not more than 50 times.

  In the method for producing a silicon-based thin film photoelectric conversion device of the present invention, the flow rate ratio between the source gas and the dilution gas by hydrogen and the forming pressure are within a predetermined range, so that plasma can be efficiently confined between the electrodes and silane Even if the flow rate ratio of the dilution gas to the system gas is large to some extent, the reduction of the transparent conductive oxide layer as the underlayer can be suppressed. The reason why the pressure during formation in the CVD reaction chamber is 2 Torr or more and 5 Torr or less is as follows. If it is less than 2 Torr, the plasma is not confined efficiently, and the decomposition of the raw material gas cannot be promoted, so that the electrical and optical characteristics of the formed thin film are also deteriorated. This is because the film thickness uniformity of the thin film deteriorates too much, and a large amount of powder-like products and dusts are generated in the reaction chamber.

The present inventors changed the pressure in the CVD reaction chamber from 1 Torr to 10 Torr to form a p-type semiconductor layer, and then measured the conductivity of the p-type semiconductor layer. As a result, the conductivity of the thin film formed on the glass with a film thickness of about 1 μm at a reaction chamber pressure of less than 2 Torr, for example, 1 Torr was 7 × 10 ⁻⁷ S / cm, whereas it was 2 Torr or more, for example, 3 Torr. the conductivity of the thin film was formed to have a thickness of about 1μm on a glass reaction chamber pressure is 5 × 10- ⁶ S / cm, and the 1 order of magnitude compared to the conductivity of the thin film formed in a reaction chamber pressure of less than 2Torr It became bigger.

  Further, the flow rate ratio of the dilution gas to the silane-based gas is set to 5 times or more and 50 times or less, and if it is 5 times or less, the electrical characteristics required for the conductive layer of the photoelectric conversion device cannot be obtained. This is because if it exceeds 50 times, the reduction of the transparent conductive oxide layer, which is the underlayer, with a diluent gas containing hydrogen becomes intense even under a high pressure in the reaction chamber.

  According to the present invention, reducing damage to the underlayer when forming the p-type semiconductor layer can be reduced, and a thin film silicon-based photoelectric conversion device having a p-type semiconductor layer with excellent film quality can be formed. A highly efficient photoelectric conversion device can be manufactured.

1 is a structural cross-sectional view of a photoelectric conversion device according to a first embodiment of the present invention. Cross-sectional view of the structure of a stacked photoelectric conversion device according to a second embodiment of the present invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Transparent substrate 2 Transparent conductive oxide layer 31 The thin film silicon photoelectric conversion unit 311 which is a front photoelectric conversion unit 311 The p-type semiconductor layer which is one conductivity type layer in a front photoelectric conversion unit 312 The photoelectric conversion layer in a front photoelectric conversion unit A substantially intrinsic semiconductor photoelectric conversion layer 313, an n-type semiconductor layer 32 that is a reverse conductivity type layer in the front photoelectric conversion unit 32, a crystalline silicon photoelectric conversion unit 321 in the rear photoelectric conversion unit A p-type semiconductor layer 322 that is one conductivity type layer 322 is a substantially intrinsic semiconductor crystalline silicon photoelectric conversion layer 323 that is a photoelectric conversion layer in the rear photoelectric conversion unit 323 is a reverse conductivity type layer in the rear photoelectric conversion unit , N-type semiconductor layer 4 Back electrode layer

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In each drawing of the present application, dimensional relationships such as thickness and length are appropriately changed for clarity and simplification of the drawings, and do not represent actual dimensional relationships. Moreover, in each figure, the same referential mark represents the same part or an equivalent part.

  FIG. 1 is a cross-sectional view of a photoelectric conversion device according to an example of an embodiment of the present invention. On the transparent substrate 1, a transparent conductive oxide layer 2, a p-type semiconductor layer 311 disposed in front, a substantially intrinsic semiconductor photoelectric conversion layer 312, an n-type semiconductor layer 313 disposed in the rear, and a back electrode layer They are arranged in the order of 4.

A plate-like member or a sheet-like member made of glass, transparent resin or the like is used for the transparent substrate 1 used in a photoelectric conversion device of a type in which light enters from the substrate side. The transparent conductive oxide layer 2 is made of a conductive metal oxide such as SnO _{2 and} is preferably formed using a method such as CVD, sputtering, or vapor deposition. The transparent conductive oxide layer 2 desirably has an effect of increasing the scattering of incident light by having fine irregularities on its surface.

  A p-type semiconductor layer 311, a substantially intrinsic semiconductor photoelectric conversion layer 312 and an n-type semiconductor layer 313 are sequentially formed on the transparent conductive oxide layer 2, and a p-type semiconductor layer 311 is formed by plasma CVD. The pressure in the plasma CVD reaction chamber is 2 Torr to 5 Torr, and a silane-based gas and a diluent gas containing hydrogen are used as the main components of the source gas introduced into the CVD reaction chamber. It is formed under conditions where the flow rate ratio is 5 to 50 times.

  As the p-type semiconductor layer 311, for example, a p-type amorphous silicon thin film doped with 0.01 atomic% or more of boron, which is a conductivity determining impurity atom, can be used. However, these conditions for the p-type semiconductor layer 311 are not limited, and the impurity atom may be aluminum or the like, and a layer of an alloy material such as amorphous silicon carbide or amorphous silicon germanium is used. May be.

  The intrinsic semiconductor photoelectric conversion layer 312 is made of a non-doped amorphous silicon thin film or a silicon-based thin film material having a weak p-type or weak n-type containing a small amount of impurities and sufficiently having photoelectric conversion efficiency. obtain. The intrinsic semiconductor photoelectric conversion layer 312 is not limited to these materials, and a layer of an alloy material such as amorphous silicon carbide or amorphous silicon germanium may be used.

  As n-type semiconductor layer 313, for example, an n-type amorphous silicon thin film doped with 0.01 atomic% or more of phosphorus, which is a conductivity determining impurity atom, can be used. However, these conditions for the n-type semiconductor layer 313 are not limited, and a microcrystalline silicon thin film or a layer of an alloy material such as amorphous silicon carbide or amorphous silicon germanium may be used.

  As the back electrode layer 4, it is preferable to form at least one metal layer made of at least one material selected from Al, Ag, Au, Cu, Pt and Cr by sputtering or vapor deposition. Moreover, you may form the layer which consists of electroconductive oxides, such as ITO, SnO2, ZnO, between a photoelectric conversion unit and a back surface electrode (not shown).

  Next, a tandem-type thin film silicon photoelectric conversion device according to the second embodiment of the present invention will be described with reference to the schematic cross-sectional view of FIG. In the photoelectric conversion device of FIG. 2, the transparent conductive oxide layer 2 is formed on the transparent substrate 1 in the same manner as the transparent conductive oxide layer of FIG.

  On the transparent conductive oxide layer 2, an amorphous structure including a p-type semiconductor layer 311, a substantially intrinsic semiconductor amorphous silicon photoelectric conversion layer 312, and an n-type semiconductor layer 313 sequentially stacked by a plasma CVD method. A quality photoelectric conversion unit 31 is formed. In the tandem photoelectric conversion device, a crystalline photoelectric conversion device further including a p-type semiconductor layer 321, a substantially intrinsic semiconductor crystalline photoelectric conversion layer 322, and an n-type semiconductor layer 323 on the amorphous photoelectric conversion unit 31. A conversion unit 32 is formed. Note that light is transmitted between the n-type semiconductor layer 313 in the amorphous photoelectric conversion unit 31 disposed in front of the light incident side and the p-type semiconductor layer 321 in the crystalline photoelectric conversion unit 32 disposed in the rear. It is also possible to form an intermediate reflective layer that has both the property and the light reflectivity.

  Then, the back electrode layer 4 is formed on the crystalline photoelectric conversion unit 32 as in the case of FIG. 1, and the tandem thin film silicon photoelectric conversion device as shown in FIG. 2 is completed.

  Hereinafter, a silicon-based thin film solar cell as a silicon-based thin film photoelectric conversion device according to some embodiments of the present invention will be described together with a solar cell according to a comparative example.

(Example 1)
Corresponding to the first embodiment described with reference to FIG. 1, an amorphous silicon solar cell as Example 1 was fabricated. Glass was used for the substrate 1 and SnO ₂ was used for the transparent conductive oxide layer 2. On top of this, a boron-doped p-type silicon carbide (SiC) layer 311 which is a p-type semiconductor layer is 10 nm, a non-doped amorphous silicon photoelectric conversion layer 312 is 300 nm, and a phosphorus-doped n-type microcrystalline silicon layer 313 is a 20 nm film. Each film was formed by a plasma CVD method. Thereby, an amorphous silicon photoelectric conversion unit having a pin junction was formed. Further, as the back electrode layer 4, a ZnO film having a thickness of 80 nm and an Ag film having a thickness of 300 nm were formed by sputtering.

The p-type silicon carbide layer 311 was deposited by a parallel plate type high-frequency plasma CVD method. Regarding the film forming conditions at that time, the plasma excitation frequency was 27.12 MHz, the substrate temperature was 190 ° C., and the pressure in the reaction chamber was 3 Torr. Silane, methane, diborane, and hydrogen are used as source gases introduced into the plasma CVD reaction chamber, and the flow ratio of these gases is 1.6 for methane and 0.01 for diborane relative to silane 1. , Hydrogen was set to 14. Further, dark conductivity of p-type silicon carbide film 600nm formed into a film on glass 5 × 10- ⁶ S / cm, optical conductivities was 7 × 10- ⁶ S / cm in this condition.

  In the output characteristics when the light of AM1.5 is irradiated as incident light onto the solar cell of Example 1 with a light amount of 100 mW / cm 2, the open-circuit voltage is 0.909 V and the short-circuit current density is 16.2 mA / cm2, the fill factor was 73.5%, and the conversion efficiency was 10.8%.

(Comparative Example 1)
Similarly, an amorphous silicon solar cell having the configuration shown in FIG. 1 was produced. Except for the film forming conditions of the p-type silicon carbide layer 311, it was exactly the same as Example 1.

The p-type silicon carbide layer was deposited by a parallel plate type high-frequency plasma CVD method. Regarding the film forming conditions at that time, the plasma excitation frequency was 27.12 MHz, the substrate temperature was 190 ° C., the pressure in the reaction chamber was 1 Torr, and the flow rate ratio of the source gas introduced into the reaction chamber was 1 for methane to 1 for silane. .6, diborane was 0.01, and hydrogen was set to 14. Further, dark conductivity of p-type silicon carbide film 600nm formed into a film on glass 1 × 10 ^-6 S / cm, optical conductivities was 2 × 10- ⁶ S / cm in this condition.

  In the output characteristics when the solar cell of Comparative Example 1 is irradiated with incident light of AM 1.5 and a light amount of 100 mW / cm 2, the open-circuit voltage is 0.903 V, the short-circuit current density is 15.8 mA / cm 2, The fill factor was 72.5% and the conversion efficiency was 10.4%.

(Example 2)
Further, an amorphous silicon solar cell having the configuration shown in FIG. 1 was produced. The p-type silicon carbide layer 311 is deposited by a parallel plate type high-frequency plasma CVD method, and film formation conditions at that time are as follows: plasma excitation frequency is 27.12 MHz, substrate temperature is 190 ° C., reaction chamber pressure is 5 Torr, reaction chamber Silane, methane, diborane, and hydrogen are used as raw material gases to be introduced into the gas. The flow ratio of these gases is 1.6 for methane, 0.01 for diborane, and 20 for hydrogen. Was set to

  When the solar cell of Example 2 is irradiated with AM1.5 light as incident light at a light quantity of 100 mW / cm2, the output characteristics are as follows: the open-circuit voltage is 0.898 V, and the short-circuit current density is 15.9 mA / cm2. The fill factor was 73.7% and the conversion efficiency was 10.6%. Compared with Comparative Example 1, the solar cell shown in Example 2 shows no significant change in short-circuit current density, but an increase in the fill factor.

(Comparative Example 2)
An amorphous silicon solar cell having the configuration shown in FIG. 1 was produced. Except for the film forming conditions of the p-type silicon carbide layer 311, it was exactly the same as Example 1.

  The p-type silicon carbide layer was deposited by a parallel plate type high frequency plasma CVD method. Regarding the film forming conditions at that time, the excitation frequency of plasma was 27.12 MHz, the substrate temperature was 190 ° C., the pressure in the reaction chamber was 7 Torr, and the flow rate ratio of the raw material gas introduced into the reaction chamber was 1 for methane to 1 for silane. .6, diborane was 0.01, and hydrogen was set to 38.

  In the output characteristics when the solar cell of Comparative Example 2 is irradiated with light of AM1.5 and 100 mW / cm2 as incident light, the open-circuit voltage is 0.873 V, the short-circuit current density is 15.9 mA / cm2, The fill factor was 74.8% and the conversion efficiency was 10.4%.

(Examples 3 to 5 and Comparative Example 3)
Corresponding to the first embodiment described with reference to FIG. 1, the flow rate ratio of the dilution gas to the source gas is changed as the formation condition of the p-type semiconductor layer 311, and otherwise, Example 1 or Comparative Example 1 Amorphous silicon solar cells were produced by the same method as described above. As film forming conditions, the substrate temperature is 190 ° C., the pressure in the reaction chamber is 3 Torr, the photoelectric conversion characteristics for each value of the flow rate ratio of the dilution gas to the source gas introduced into the reaction chamber when forming the p-type conductivity type layer 311 and comparative examples The results compared with 3 are shown in Table 1. The formation conditions of the p-type conductivity layer 311 in Comparative Example 3 are as follows: the substrate temperature is fixed at 190 ° C., the reaction chamber pressure is fixed at 3 Torr, and the flow rate ratio of the source gas introduced into the reaction chamber is methane relative to silane 1. Is fixed to 1.5, diborane is 0.01, and hydrogen is 70.

  As shown in Table 1, as the flow rate ratio of the dilution gas to the source gas increases, the p-type silicon carbide layer is improved in quality and the photoelectric conversion characteristics are improved. Further, when the flow rate ratio of the dilution gas to the source gas is increased to 70, the photoelectric conversion characteristics are deteriorated. In this comparative example 3, that is, in the deterioration of the photoelectric conversion characteristics in the region where the flow rate ratio of the dilution gas to the source gas is high, the short circuit current density is greatly reduced. It is considered that a decrease in the amount of light incident on the photoelectric conversion layer occurs as a result of an increase in the relative amount in the room as a result of the plasma condition having a strong reducing property damaging the underlying transparent conductive oxide layer.

(Example 6 and Comparative Example 4)
Corresponding to the second embodiment described with reference to FIG. 2, tandem silicon solar cells as Example 6 and Comparative Example 4 were produced. Glass was used for the substrate 1, and SnO 2 was used for the transparent conductive oxide layer 2. On top of this, plasma CVD is performed with a boron-doped p-type silicon carbide (SiC) layer 311 having a thickness of 10 nm, a non-doped amorphous silicon photoelectric conversion layer 312 having a thickness of 300 nm, and a phosphorus-doped n-type microcrystalline silicon layer 313 having a thickness of 20 nm. The film was formed by the method. As a result, a pin junction amorphous silicon photoelectric conversion unit 31 as a front photoelectric conversion unit was formed. Further, on the amorphous silicon photoelectric conversion unit 31, a boron-doped p-type microcrystalline silicon layer 321 is 15 nm, a non-doped crystalline silicon photoelectric conversion layer 322 is 1.6 μm, and a phosphorus-doped n-type microcrystalline silicon layer 323 is 20 nm. Each film was formed by the plasma CVD method. As a result, a pin junction crystalline silicon photoelectric conversion unit 32 as a rear photoelectric conversion unit was formed. Further, a ZnO film having a thickness of 80 nm and an Ag film having a thickness of 300 nm were formed as the back electrode layer 4 on the rear photoelectric conversion unit 32 by sputtering. In Example 6 and Comparative Example 4, the formation conditions of the p-type silicon carbide layer 311 in the front photoelectric conversion unit were changed, and the formation conditions of the other layers were the same.

  The p-type silicon carbide layer 311 in Example 6 was deposited by a parallel plate type high frequency plasma CVD method. Regarding the film forming conditions at that time, the plasma excitation frequency was 27.12 MHz, the substrate temperature was 190 ° C., and the pressure in the reaction chamber was 3 Torr. Silane, methane, diborane, and hydrogen are used as source gases introduced into the plasma CVD reaction chamber, and the flow ratio of these gases is 1.6 for methane and 0.01 for diborane relative to silane 1. , Hydrogen was set to 14. In the output characteristics when the light of AM1.5 is irradiated as incident light to the solar cell of Example 6 with a light amount of 100 mW / cm 2, the open-circuit voltage is 1.412 V and the short-circuit current density is 11.8 mA / cm2, the fill factor was 74.0%, and the conversion efficiency was 12.3%.

  The p-type silicon carbide layer 311 in Comparative Example 4 was deposited by a parallel plate type high frequency plasma CVD method. Regarding the film forming conditions at that time, the plasma excitation frequency was 27.12 MHz, the substrate temperature was 190 ° C., and the reaction chamber pressure was 1 Torr. Silane, methane, diborane, and hydrogen are used as source gases introduced into the plasma CVD reaction chamber, and the flow ratio of these gases is 1.6 for methane and 0.01 for diborane relative to silane 1. , Hydrogen was set to 14. In the output characteristics when the light of AM1.5 is irradiated to the solar cell of Example 6 as the incident light at a light quantity of 100 mW / cm 2, the open-circuit voltage is 1.397 V and the short-circuit current density is 11.7 mA / cm2, the fill factor was 74.0%, and the conversion efficiency was 12.0%. Compared with the output characteristics in Example 6, in Comparative Example 4, the short-circuit current density and the fill factor were equivalent values, but the open-circuit voltage value was lower than that of Example 6.

Claims (3)

  A method of manufacturing a photoelectric conversion device in which a transparent conductive oxide layer, a p-type semiconductor layer, a substantially intrinsic semiconductor photoelectric conversion layer, and an n-type semiconductor layer are arranged in this order from the light incident direction, the p-type semiconductor The layer is formed by a plasma CVD method using at least a silane-based gas and a diluent gas containing hydrogen, and the formation pressure is in the range of 2 Torr to 5 Torr, and further, the dilution with respect to the silane-based gas A method for manufacturing a photoelectric conversion device, wherein a gas flow ratio is 5 to 50 times.   The method for manufacturing a photoelectric conversion device according to claim 1, wherein the transparent conductive oxide layer is made of tin oxide.   3. The method for manufacturing a photoelectric conversion device according to claim 1, wherein the p-type semiconductor layer mainly contains silicon carbide as a main component.

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