JPS649446A - Pattern forming process - Google Patents
Pattern forming processInfo
- Publication number
- JPS649446A JPS649446A JP16391887A JP16391887A JPS649446A JP S649446 A JPS649446 A JP S649446A JP 16391887 A JP16391887 A JP 16391887A JP 16391887 A JP16391887 A JP 16391887A JP S649446 A JPS649446 A JP S649446A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pattern
- irradiating
- ultraviolet rays
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
PURPOSE:To improve resolution of a pattern and to obtain sufficiently high contrast by using a photosensitive layer contg. an aromatic diazonium salt and a high molecular compd. CONSTITUTION:A photosensitive layer (A) which is discolored by exposure is formed on a photoresist layer after forming the photoresist layer on a substrate (e.g. silicon wafer). Then, an exposed part of the layer (A) is made transparent by irradiating the layer (A) with far ultraviolet rays through a specified pattern. Then, the resist layer is exposed by irradiating the whole surface of the resist layer with light having longer wavelength than said far ultraviolet rays using the unexposed part of the above described photosensitive layer (A) as mask. The layer (A) is removed and the resist layer is developed, and a pattern is formed. In this process, it is preferred that a water-soluble aromatic diazonium salt (e.g. compds. expressed by the formula) and a water-soluble high molecular compd. [e.g., poly(N-vinyl pyrrolidone)] are used for the layer (A). In the formula, each R1-R4 is H, alkyl, etc.; X is Cl, BF4, etc.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16391887A JPS649446A (en) | 1987-07-02 | 1987-07-02 | Pattern forming process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16391887A JPS649446A (en) | 1987-07-02 | 1987-07-02 | Pattern forming process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS649446A true JPS649446A (en) | 1989-01-12 |
Family
ID=15783297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16391887A Pending JPS649446A (en) | 1987-07-02 | 1987-07-02 | Pattern forming process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS649446A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02872A (en) * | 1987-11-27 | 1990-01-05 | Tosoh Corp | Photosensitive resin composition and pattern forming method by using said composition |
JPH02262150A (en) * | 1989-03-31 | 1990-10-24 | Toshiba Corp | Photosensitive composition and pattern forming method |
-
1987
- 1987-07-02 JP JP16391887A patent/JPS649446A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02872A (en) * | 1987-11-27 | 1990-01-05 | Tosoh Corp | Photosensitive resin composition and pattern forming method by using said composition |
JPH02262150A (en) * | 1989-03-31 | 1990-10-24 | Toshiba Corp | Photosensitive composition and pattern forming method |
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