JPS648610A - Silicon wafer for semiconductor substrate and manufacture thereof - Google Patents
Silicon wafer for semiconductor substrate and manufacture thereofInfo
- Publication number
- JPS648610A JPS648610A JP62164354A JP16435487A JPS648610A JP S648610 A JPS648610 A JP S648610A JP 62164354 A JP62164354 A JP 62164354A JP 16435487 A JP16435487 A JP 16435487A JP S648610 A JPS648610 A JP S648610A
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- silicon
- polycrystalline
- wafer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/125—Polycrystalline passivation
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62164354A JPH0646622B2 (ja) | 1987-06-30 | 1987-06-30 | 半導体基板用シリコンウェハの製造方法 |
US07/213,495 US4876224A (en) | 1987-06-30 | 1988-06-30 | Silicon wafer for a semiconductor substrate and the method for making the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62164354A JPH0646622B2 (ja) | 1987-06-30 | 1987-06-30 | 半導体基板用シリコンウェハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS648610A true JPS648610A (en) | 1989-01-12 |
JPH0646622B2 JPH0646622B2 (ja) | 1994-06-15 |
Family
ID=15791556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62164354A Expired - Fee Related JPH0646622B2 (ja) | 1987-06-30 | 1987-06-30 | 半導体基板用シリコンウェハの製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US4876224A (ja) |
JP (1) | JPH0646622B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03295235A (ja) * | 1990-04-12 | 1991-12-26 | Toshiba Corp | エピタキシャルウェーハの製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6066030A (en) * | 1999-03-04 | 2000-05-23 | International Business Machines Corporation | Electroetch and chemical mechanical polishing equipment |
DE10027931C1 (de) | 2000-05-31 | 2002-01-10 | Infineon Technologies Ag | Verfahren zur rückseitigen elektrischen Kontaktierung eines Halbleitersubstrats während seiner Bearbeitung |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3923567A (en) * | 1974-08-09 | 1975-12-02 | Silicon Materials Inc | Method of reclaiming a semiconductor wafer |
US4053335A (en) * | 1976-04-02 | 1977-10-11 | International Business Machines Corporation | Method of gettering using backside polycrystalline silicon |
US4608095A (en) * | 1983-02-14 | 1986-08-26 | Monsanto Company | Gettering |
US4608096A (en) * | 1983-04-04 | 1986-08-26 | Monsanto Company | Gettering |
US4666532A (en) * | 1984-05-04 | 1987-05-19 | Monsanto Company | Denuding silicon substrates with oxygen and halogen |
US4622082A (en) * | 1984-06-25 | 1986-11-11 | Monsanto Company | Conditioned semiconductor substrates |
US4659400A (en) * | 1985-06-27 | 1987-04-21 | General Instrument Corp. | Method for forming high yield epitaxial wafers |
-
1987
- 1987-06-30 JP JP62164354A patent/JPH0646622B2/ja not_active Expired - Fee Related
-
1988
- 1988-06-30 US US07/213,495 patent/US4876224A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03295235A (ja) * | 1990-04-12 | 1991-12-26 | Toshiba Corp | エピタキシャルウェーハの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0646622B2 (ja) | 1994-06-15 |
US4876224A (en) | 1989-10-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |