JPS6482519A - Vapor growth device - Google Patents

Vapor growth device

Info

Publication number
JPS6482519A
JPS6482519A JP23883087A JP23883087A JPS6482519A JP S6482519 A JPS6482519 A JP S6482519A JP 23883087 A JP23883087 A JP 23883087A JP 23883087 A JP23883087 A JP 23883087A JP S6482519 A JPS6482519 A JP S6482519A
Authority
JP
Japan
Prior art keywords
susceptor
rotor
gas
purge gas
purge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23883087A
Other languages
Japanese (ja)
Inventor
Toshimitsu Omine
Akira Ishihata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23883087A priority Critical patent/JPS6482519A/en
Priority to US07/181,091 priority patent/US5002011A/en
Priority to GB8808825A priority patent/GB2206608B/en
Publication of JPS6482519A publication Critical patent/JPS6482519A/en
Priority to US07/639,182 priority patent/US5151133A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To turn a susceptor rotor smoothly at all times by blowing off a purge gas into a clearance between a susceptor body and a rotary sliding section for the susceptor rotor. CONSTITUTION:A purge gas fed from a purge-gas introducing pipe 17 is discharged to bearing sections 16 for each susceptor rotor 3 through a purge gas introducing groove 14, a path for a shaft 2 and a distributing path 19 for a susceptor 1. Consequently, a clearance between the susceptor 1 and the susceptor rotor 3 is filled with the purge gas, and the purge gas is discharged onto the surface of the susceptor 1, and discharged from a discharge gas port 12 together with a reaction gas. Accordingly, the reaction gas is not flowed into the susceptor 1, and the rotation and revolution of a crystal substrate 4 are conducted smoothly at all times, thus growing a uniform crystal film on the crystal substrate.
JP23883087A 1987-04-14 1987-09-25 Vapor growth device Pending JPS6482519A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP23883087A JPS6482519A (en) 1987-09-25 1987-09-25 Vapor growth device
US07/181,091 US5002011A (en) 1987-04-14 1988-04-13 Vapor deposition apparatus
GB8808825A GB2206608B (en) 1987-04-14 1988-04-14 Vapor deposition apparatus
US07/639,182 US5151133A (en) 1987-04-14 1991-01-09 Vapor deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23883087A JPS6482519A (en) 1987-09-25 1987-09-25 Vapor growth device

Publications (1)

Publication Number Publication Date
JPS6482519A true JPS6482519A (en) 1989-03-28

Family

ID=17035908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23883087A Pending JPS6482519A (en) 1987-04-14 1987-09-25 Vapor growth device

Country Status (1)

Country Link
JP (1) JPS6482519A (en)

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