JPS6480068A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6480068A
JPS6480068A JP62235914A JP23591487A JPS6480068A JP S6480068 A JPS6480068 A JP S6480068A JP 62235914 A JP62235914 A JP 62235914A JP 23591487 A JP23591487 A JP 23591487A JP S6480068 A JPS6480068 A JP S6480068A
Authority
JP
Japan
Prior art keywords
capacitor
electrode layer
increased
dram
signal line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62235914A
Other languages
Japanese (ja)
Other versions
JP2567873B2 (en
Inventor
Jun Murata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP62235914A priority Critical patent/JP2567873B2/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to KR1019880011906A priority patent/KR100212098B1/en
Priority to US07/246,514 priority patent/US5153685A/en
Publication of JPS6480068A publication Critical patent/JPS6480068A/en
Priority to US08/254,562 priority patent/US5504029A/en
Priority to US08/620,867 priority patent/US5753550A/en
Priority to US08/674,185 priority patent/US5734188A/en
Application granted granted Critical
Publication of JP2567873B2 publication Critical patent/JP2567873B2/en
Priority to KR1019970040515A priority patent/KR0150941B1/en
Priority to US09/013,605 priority patent/US5930624A/en
Priority to US09/317,999 priority patent/US6281071B1/en
Priority to US09/915,590 priority patent/US20020028574A1/en
Priority to US09/998,654 priority patent/US6737318B2/en
Priority to US10/774,524 priority patent/US20040155289A1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To increase the charge accumulation capacitance of a capacitor as well to contrive reduction of a soft error by a method wherein the area of the electrode layer of the capacitor, to be used for information accumulation utilizing the extended space of the selective signal line, in increased in a DRAM. CONSTITUTION:A DRAM memory cell M is composed of a cell selecting MISFETQs and an information accumulating capacitor C of a stacked structure. In this DRAM memory cell, a set of complementary data line DL and a selective signal line YSL, with which said data line DL will be selected, are extended in the same direction. Then, the lower side electrode layer 13, constituting the above-mentioned capacitor C, is extended to the position where the electrode layer 13 will be overlapped with the selective signal line YSL. As a result, the area of the lower side electrode layer of the information accumulating capacitor C can be increased, the amount of the charge accumulation of the capacitor can also be increased, and the soft error of the DRAM can be reduced.
JP62235914A 1987-09-19 1987-09-19 Semiconductor integrated circuit device Expired - Lifetime JP2567873B2 (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP62235914A JP2567873B2 (en) 1987-09-19 1987-09-19 Semiconductor integrated circuit device
KR1019880011906A KR100212098B1 (en) 1987-09-19 1988-09-15 Semiconductor integrated circuit device and manufacturing method thereof, wiring board of semiconductor integrated circuit device and manufacturing method thereof
US07/246,514 US5153685A (en) 1987-09-19 1988-09-19 Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
US08/254,562 US5504029A (en) 1987-09-19 1994-06-06 Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs
US08/620,867 US5753550A (en) 1987-09-19 1996-03-25 Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
US08/674,185 US5734188A (en) 1987-09-19 1996-07-01 Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
KR1019970040515A KR0150941B1 (en) 1987-09-19 1997-08-25 Semiconductor integrated circuit having memory cell and peripheral circuit misfets
US09/013,605 US5930624A (en) 1987-09-19 1998-01-26 Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring
US09/317,999 US6281071B1 (en) 1987-09-19 1999-05-25 Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring therefor and method of producing such wiring
US09/915,590 US20020028574A1 (en) 1987-09-19 2001-07-27 Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
US09/998,654 US6737318B2 (en) 1987-09-19 2001-12-03 Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
US10/774,524 US20040155289A1 (en) 1987-09-19 2004-02-10 Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62235914A JP2567873B2 (en) 1987-09-19 1987-09-19 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS6480068A true JPS6480068A (en) 1989-03-24
JP2567873B2 JP2567873B2 (en) 1996-12-25

Family

ID=16993110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62235914A Expired - Lifetime JP2567873B2 (en) 1987-09-19 1987-09-19 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JP2567873B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0277154A (en) * 1988-09-13 1990-03-16 Mitsubishi Electric Corp Semiconductor memory and manufacture thereof
US5194752A (en) * 1989-05-23 1993-03-16 Kabushiki Kaisha Toshiba Semiconductor memory device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0277154A (en) * 1988-09-13 1990-03-16 Mitsubishi Electric Corp Semiconductor memory and manufacture thereof
US5194752A (en) * 1989-05-23 1993-03-16 Kabushiki Kaisha Toshiba Semiconductor memory device
US5324975A (en) * 1989-05-23 1994-06-28 Kabushiki Kaisha Toshiba Semiconductor memory device

Also Published As

Publication number Publication date
JP2567873B2 (en) 1996-12-25

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term