JPS6479369A - Method and device for film formation by sputtering - Google Patents
Method and device for film formation by sputteringInfo
- Publication number
- JPS6479369A JPS6479369A JP23780387A JP23780387A JPS6479369A JP S6479369 A JPS6479369 A JP S6479369A JP 23780387 A JP23780387 A JP 23780387A JP 23780387 A JP23780387 A JP 23780387A JP S6479369 A JPS6479369 A JP S6479369A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sputtering
- electric power
- oxygen
- concn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23780387A JPH0776419B2 (ja) | 1987-09-22 | 1987-09-22 | スパッタ成膜方法及び成膜装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23780387A JPH0776419B2 (ja) | 1987-09-22 | 1987-09-22 | スパッタ成膜方法及び成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6479369A true JPS6479369A (en) | 1989-03-24 |
JPH0776419B2 JPH0776419B2 (ja) | 1995-08-16 |
Family
ID=17020644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23780387A Expired - Fee Related JPH0776419B2 (ja) | 1987-09-22 | 1987-09-22 | スパッタ成膜方法及び成膜装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0776419B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5607559A (en) * | 1992-04-27 | 1997-03-04 | Central Glass Company Limited | Method of forming thin film on substrate by reactive DC sputtering |
US8772863B2 (en) | 2010-06-10 | 2014-07-08 | Unisantis Electronics Singapore Pte. Ltd. | Nonvolatile semiconductor memory transistor, nonvolatile semiconductor memory, and method for manufacturing nonvolatile semiconductor memory |
JP2016143758A (ja) * | 2015-02-02 | 2016-08-08 | 国立研究開発法人物質・材料研究機構 | テルル化ビスマス薄膜製造方法及びテルル化ビスマス薄膜 |
CN106756808A (zh) * | 2016-11-29 | 2017-05-31 | 深圳倍声声学技术有限公司 | 一种提高动铁部件抗腐蚀性能的方法 |
-
1987
- 1987-09-22 JP JP23780387A patent/JPH0776419B2/ja not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5607559A (en) * | 1992-04-27 | 1997-03-04 | Central Glass Company Limited | Method of forming thin film on substrate by reactive DC sputtering |
US8772863B2 (en) | 2010-06-10 | 2014-07-08 | Unisantis Electronics Singapore Pte. Ltd. | Nonvolatile semiconductor memory transistor, nonvolatile semiconductor memory, and method for manufacturing nonvolatile semiconductor memory |
JP2016143758A (ja) * | 2015-02-02 | 2016-08-08 | 国立研究開発法人物質・材料研究機構 | テルル化ビスマス薄膜製造方法及びテルル化ビスマス薄膜 |
CN106756808A (zh) * | 2016-11-29 | 2017-05-31 | 深圳倍声声学技术有限公司 | 一种提高动铁部件抗腐蚀性能的方法 |
CN106756808B (zh) * | 2016-11-29 | 2019-04-02 | 深圳倍声声学技术有限公司 | 一种提高动铁部件抗腐蚀性能的方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0776419B2 (ja) | 1995-08-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |