JPS6476909A - High-purity spherical particle of si-b alloy and production thereof - Google Patents
High-purity spherical particle of si-b alloy and production thereofInfo
- Publication number
- JPS6476909A JPS6476909A JP23203687A JP23203687A JPS6476909A JP S6476909 A JPS6476909 A JP S6476909A JP 23203687 A JP23203687 A JP 23203687A JP 23203687 A JP23203687 A JP 23203687A JP S6476909 A JPS6476909 A JP S6476909A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- crucible
- boron
- shot
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Silicon Compounds (AREA)
Abstract
PURPOSE:To obtain the titled alloy particles having spherical form, high fluidity and uniform boron concentration, by mixing metallic silicon with metallic boron or B2O3, putting the mixture into a crucible, melting and reacting the components in an inert gas atmosphere and pressurizing the content to shot the reaction product through a hole of the crucible bottom. CONSTITUTION:Metallic silicon is mixed with metallic boron or boron oxide and the mixture is put into a crucible 1 and an inert gas is introduced through a gas inlet port 8. The content of the crucible is heated and melted with a high-frequency coil heater 5 through a suscepter 6 and reacted to form a uniform Si-B alloy. A gas pressure is applied to the alloy through a pressure-controlling gas inlet port 4 to shot the reaction product through the hole 7 of the crucible bottom and introduce the shot product into a water tank 9. The high-purity Si-B alloy particles produced by the above process has nearly spherical form, high fluidity and uniform boron concentration among and in the particles. The particle diameter of the alloy particle can be arbitrarily controlled by selecting the diameter of the hole 7 of the crucible bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23203687A JPS6476909A (en) | 1987-09-18 | 1987-09-18 | High-purity spherical particle of si-b alloy and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23203687A JPS6476909A (en) | 1987-09-18 | 1987-09-18 | High-purity spherical particle of si-b alloy and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6476909A true JPS6476909A (en) | 1989-03-23 |
Family
ID=16932960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23203687A Pending JPS6476909A (en) | 1987-09-18 | 1987-09-18 | High-purity spherical particle of si-b alloy and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6476909A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6706959B2 (en) | 2000-11-24 | 2004-03-16 | Clean Venture 21 Corporation | Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles |
| JP2015182936A (en) * | 2014-03-25 | 2015-10-22 | Jx日鉱日石金属株式会社 | High-purity boron and production method thereof |
-
1987
- 1987-09-18 JP JP23203687A patent/JPS6476909A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6706959B2 (en) | 2000-11-24 | 2004-03-16 | Clean Venture 21 Corporation | Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles |
| JP2015182936A (en) * | 2014-03-25 | 2015-10-22 | Jx日鉱日石金属株式会社 | High-purity boron and production method thereof |
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