JPS64760A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS64760A JPS64760A JP15569287A JP15569287A JPS64760A JP S64760 A JPS64760 A JP S64760A JP 15569287 A JP15569287 A JP 15569287A JP 15569287 A JP15569287 A JP 15569287A JP S64760 A JPS64760 A JP S64760A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- gate electrode
- source
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-155692A JPH01760A (ja) | 1987-06-23 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-155692A JPH01760A (ja) | 1987-06-23 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS64760A true JPS64760A (en) | 1989-01-05 |
JPH01760A JPH01760A (ja) | 1989-01-05 |
Family
ID=
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03263329A (ja) * | 1990-02-20 | 1991-11-22 | Sharp Corp | 半導体装置の製造方法 |
US5648673A (en) * | 1994-12-28 | 1997-07-15 | Nippon Steel Corporation | Semiconductor device having metal silicide film on impurity diffused layer or conductive layer |
US6313032B1 (en) | 2000-07-21 | 2001-11-06 | Mitsubishi Denki Kabushiki Kaisha | Method for manufacturing a salicide transistor, semiconductor storage, and semiconductor device |
US7232753B2 (en) * | 2003-12-31 | 2007-06-19 | Dongbu Electronics Co., Ltd. | Method of fabricating semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03263329A (ja) * | 1990-02-20 | 1991-11-22 | Sharp Corp | 半導体装置の製造方法 |
US5648673A (en) * | 1994-12-28 | 1997-07-15 | Nippon Steel Corporation | Semiconductor device having metal silicide film on impurity diffused layer or conductive layer |
US6313032B1 (en) | 2000-07-21 | 2001-11-06 | Mitsubishi Denki Kabushiki Kaisha | Method for manufacturing a salicide transistor, semiconductor storage, and semiconductor device |
US7232753B2 (en) * | 2003-12-31 | 2007-06-19 | Dongbu Electronics Co., Ltd. | Method of fabricating semiconductor device |
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