JPS647576A - Manufacture of piezoelectric thin film - Google Patents
Manufacture of piezoelectric thin filmInfo
- Publication number
- JPS647576A JPS647576A JP62162045A JP16204587A JPS647576A JP S647576 A JPS647576 A JP S647576A JP 62162045 A JP62162045 A JP 62162045A JP 16204587 A JP16204587 A JP 16204587A JP S647576 A JPS647576 A JP S647576A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- thin film
- chrome
- oxides
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To improve orientation property and reduce the residual strain by a method wherein a zinc oxide thin film containing boron oxide and at least one of oxides such as chrome, nickel, and iron oxide is formed on a substrate. CONSTITUTION:At least one of metals or oxides of them such as chrome, nickel, or iron is added to a target of zinc or zinc oxide containing boron or boron oxide and the target is subjected to a sputtering process so as to form a zinc oxide thin film which contains boron oxide and at least one of oxides such as chrome, nickel, or iron oxide on a substrate. Therefore, the zinc oxide thin film containing boron oxide (B2O3) and one or more kinds of oxides such as chrome oxide (Cr2O3), nickel oxide (NiO), and iron oxide (Fe:O3) can be obtained. That is, the substrate is heated at low temperature during the sputtering of the zinc oxide thin film containing boron, whereby a transparent piezoelectric thin film can be obtained which is excellent in a film property. By these processes, the strain induced by bimetal effect of a substrate and a thin film can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62162045A JPS647576A (en) | 1987-06-29 | 1987-06-29 | Manufacture of piezoelectric thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62162045A JPS647576A (en) | 1987-06-29 | 1987-06-29 | Manufacture of piezoelectric thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS647576A true JPS647576A (en) | 1989-01-11 |
Family
ID=15747042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62162045A Pending JPS647576A (en) | 1987-06-29 | 1987-06-29 | Manufacture of piezoelectric thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS647576A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008018699A (en) * | 2006-07-14 | 2008-01-31 | Takehiko Kishikawa | Index pasting aid |
JP2013503469A (en) * | 2009-08-26 | 2013-01-31 | インディアン インスティテュート オブ テクノロジー マドラス | Stable p-type semiconducting behavior in Li and Ni co-doped ZnO |
-
1987
- 1987-06-29 JP JP62162045A patent/JPS647576A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008018699A (en) * | 2006-07-14 | 2008-01-31 | Takehiko Kishikawa | Index pasting aid |
JP2013503469A (en) * | 2009-08-26 | 2013-01-31 | インディアン インスティテュート オブ テクノロジー マドラス | Stable p-type semiconducting behavior in Li and Ni co-doped ZnO |
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