JPS647576A - Manufacture of piezoelectric thin film - Google Patents

Manufacture of piezoelectric thin film

Info

Publication number
JPS647576A
JPS647576A JP62162045A JP16204587A JPS647576A JP S647576 A JPS647576 A JP S647576A JP 62162045 A JP62162045 A JP 62162045A JP 16204587 A JP16204587 A JP 16204587A JP S647576 A JPS647576 A JP S647576A
Authority
JP
Japan
Prior art keywords
oxide
thin film
chrome
oxides
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62162045A
Other languages
Japanese (ja)
Inventor
Hajime Miyajima
Keiichi Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP62162045A priority Critical patent/JPS647576A/en
Publication of JPS647576A publication Critical patent/JPS647576A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve orientation property and reduce the residual strain by a method wherein a zinc oxide thin film containing boron oxide and at least one of oxides such as chrome, nickel, and iron oxide is formed on a substrate. CONSTITUTION:At least one of metals or oxides of them such as chrome, nickel, or iron is added to a target of zinc or zinc oxide containing boron or boron oxide and the target is subjected to a sputtering process so as to form a zinc oxide thin film which contains boron oxide and at least one of oxides such as chrome, nickel, or iron oxide on a substrate. Therefore, the zinc oxide thin film containing boron oxide (B2O3) and one or more kinds of oxides such as chrome oxide (Cr2O3), nickel oxide (NiO), and iron oxide (Fe:O3) can be obtained. That is, the substrate is heated at low temperature during the sputtering of the zinc oxide thin film containing boron, whereby a transparent piezoelectric thin film can be obtained which is excellent in a film property. By these processes, the strain induced by bimetal effect of a substrate and a thin film can be reduced.
JP62162045A 1987-06-29 1987-06-29 Manufacture of piezoelectric thin film Pending JPS647576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62162045A JPS647576A (en) 1987-06-29 1987-06-29 Manufacture of piezoelectric thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62162045A JPS647576A (en) 1987-06-29 1987-06-29 Manufacture of piezoelectric thin film

Publications (1)

Publication Number Publication Date
JPS647576A true JPS647576A (en) 1989-01-11

Family

ID=15747042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62162045A Pending JPS647576A (en) 1987-06-29 1987-06-29 Manufacture of piezoelectric thin film

Country Status (1)

Country Link
JP (1) JPS647576A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008018699A (en) * 2006-07-14 2008-01-31 Takehiko Kishikawa Index pasting aid
JP2013503469A (en) * 2009-08-26 2013-01-31 インディアン インスティテュート オブ テクノロジー マドラス Stable p-type semiconducting behavior in Li and Ni co-doped ZnO

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008018699A (en) * 2006-07-14 2008-01-31 Takehiko Kishikawa Index pasting aid
JP2013503469A (en) * 2009-08-26 2013-01-31 インディアン インスティテュート オブ テクノロジー マドラス Stable p-type semiconducting behavior in Li and Ni co-doped ZnO

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