JPS6475529A - Dimethyl(substituted phenyl)silylmethylpolysilane and production thereof - Google Patents

Dimethyl(substituted phenyl)silylmethylpolysilane and production thereof

Info

Publication number
JPS6475529A
JPS6475529A JP23328687A JP23328687A JPS6475529A JP S6475529 A JPS6475529 A JP S6475529A JP 23328687 A JP23328687 A JP 23328687A JP 23328687 A JP23328687 A JP 23328687A JP S6475529 A JPS6475529 A JP S6475529A
Authority
JP
Japan
Prior art keywords
amino
substituted
phenyldisilane
dichloro
trimethyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23328687A
Other languages
Japanese (ja)
Other versions
JPH0424365B2 (en
Inventor
Naotake Sudo
Shigeki Higuchi
Yoshitaka Naoi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UKI GOSEI KOGYO CO Ltd
Original Assignee
UKI GOSEI KOGYO CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UKI GOSEI KOGYO CO Ltd filed Critical UKI GOSEI KOGYO CO Ltd
Priority to JP23328687A priority Critical patent/JPS6475529A/en
Publication of JPS6475529A publication Critical patent/JPS6475529A/en
Publication of JPH0424365B2 publication Critical patent/JPH0424365B2/ja
Granted legal-status Critical Current

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  • Silicon Polymers (AREA)

Abstract

PURPOSE:To obtain the titled polymer useful for e.g. electronic materials such as photoresist materials, organic semiconductors, and optical information recording materials, by condensation reaction, in the presence of an alkali (alkaline earth) metal, of a dichloro-trimethyl-substituted phenyldisilane. CONSTITUTION:The objective polymer constituted of recurring unit of formula II (R is OH, amino, vinyl, lower alkyl, lower alkoxy or halogen) can be obtained by condensation reaction, in the presence of an alkali (alkaline earth) metal, generally at temperatures ranging from 0 deg.C to the boiling point of the solvent to used for the reaction for 1-50hr, of a 1,1-dichloro-1,2,2-trimethyl-2-substituted phenyldisilane of formula I (R' is OH, amino, vinyl, lower alkyl, lower alkoxy, halogen, OH carrying protective group, or amino).
JP23328687A 1987-09-17 1987-09-17 Dimethyl(substituted phenyl)silylmethylpolysilane and production thereof Granted JPS6475529A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23328687A JPS6475529A (en) 1987-09-17 1987-09-17 Dimethyl(substituted phenyl)silylmethylpolysilane and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23328687A JPS6475529A (en) 1987-09-17 1987-09-17 Dimethyl(substituted phenyl)silylmethylpolysilane and production thereof

Publications (2)

Publication Number Publication Date
JPS6475529A true JPS6475529A (en) 1989-03-22
JPH0424365B2 JPH0424365B2 (en) 1992-04-24

Family

ID=16952720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23328687A Granted JPS6475529A (en) 1987-09-17 1987-09-17 Dimethyl(substituted phenyl)silylmethylpolysilane and production thereof

Country Status (1)

Country Link
JP (1) JPS6475529A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003162058A (en) * 2001-11-28 2003-06-06 Seiko Epson Corp Film pattern forming method, film pattern, method for manufacturing semiconductor device, semiconductor device, method for manufacturing electrooptic device, and electrooptic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003162058A (en) * 2001-11-28 2003-06-06 Seiko Epson Corp Film pattern forming method, film pattern, method for manufacturing semiconductor device, semiconductor device, method for manufacturing electrooptic device, and electrooptic device

Also Published As

Publication number Publication date
JPH0424365B2 (en) 1992-04-24

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees