JPS6474812A - High frequency power amplifier - Google Patents
High frequency power amplifierInfo
- Publication number
- JPS6474812A JPS6474812A JP23305387A JP23305387A JPS6474812A JP S6474812 A JPS6474812 A JP S6474812A JP 23305387 A JP23305387 A JP 23305387A JP 23305387 A JP23305387 A JP 23305387A JP S6474812 A JPS6474812 A JP S6474812A
- Authority
- JP
- Japan
- Prior art keywords
- sides
- amplifiers
- line
- low impedance
- connects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Microwave Amplifiers (AREA)
Abstract
PURPOSE:To simplify external connection and to realize the miniaturization of a device and the reduction of output loss, by arranging two synthesized lines at an output side by confronting their low impedance sides with each other, and coupling the low impedance side with a line by a T-branching path. CONSTITUTION:The gate and the drains of amplifiers (FET) A1-A12 are connected by a distributor 5 and asynthesizer 6. The distributor 5 connects the amplifiers (FET chip) A1-A6 to a distribution line 1a, and connects the amplifiers A7-A12 to a distribution line 1b. In such a case, the high impedance sides of the lines 1a and 1b are confronted and arranged symmetrically, and the low impedance sides are connected to an input line via the T-branching path 3. The synthesizer 6 connects the amplifiers A1-A6 to a synthesizing line 2a, and connects the amplifiers A7-A12 to a synthesizing line 2b. The lines 2a and 2b are arranged symmetrically by confronting their low impedance sides with each other, and the low impedance sides are connected to an output line via the T-branching path 4. The FETs A1-A6 and the FETs A7-A12 are operated with different phases at the distribution sides, however, their phases are corrected at the synthesizing sides.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23305387A JPS6474812A (en) | 1987-09-17 | 1987-09-17 | High frequency power amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23305387A JPS6474812A (en) | 1987-09-17 | 1987-09-17 | High frequency power amplifier |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6474812A true JPS6474812A (en) | 1989-03-20 |
Family
ID=16949058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23305387A Pending JPS6474812A (en) | 1987-09-17 | 1987-09-17 | High frequency power amplifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6474812A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5075645A (en) * | 1989-08-04 | 1991-12-24 | Matsushita Electric Industrial Co., Ltd. | Matching circuit for high frequency transistor |
JPH09312534A (en) * | 1996-05-20 | 1997-12-02 | Mitsubishi Electric Corp | Microwave amplifier |
-
1987
- 1987-09-17 JP JP23305387A patent/JPS6474812A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5075645A (en) * | 1989-08-04 | 1991-12-24 | Matsushita Electric Industrial Co., Ltd. | Matching circuit for high frequency transistor |
JPH09312534A (en) * | 1996-05-20 | 1997-12-02 | Mitsubishi Electric Corp | Microwave amplifier |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MY120331A (en) | Impedance matching circuit for power amplifier | |
IE822797L (en) | Cmis semiconductor device with two power supplies | |
JPS5641587A (en) | Cmos sense amplifying circuit | |
AU629685B2 (en) | Amplifying with directly coupled, cascaded amplifiers | |
GB1376462A (en) | Amplifiers | |
SE8504394L (en) | EFFECTIVE AMPLIFIER | |
SE9502479D0 (en) | Transmission line switch for signal amplifiers operating at radio frequency | |
KR890004212B1 (en) | Complementary logic circuit | |
JPS6474812A (en) | High frequency power amplifier | |
FI962420A (en) | Low noise amplifier | |
JPS5451446A (en) | Directional coupler | |
EP0346020A3 (en) | Drive amplifier circuit | |
TW431067B (en) | Single source differential circuit | |
EP0176331A3 (en) | Power divider/combiner circuit | |
GB1520078A (en) | Integrated mis driver stage | |
JPS5621419A (en) | Logical operation circuit | |
EP0347048A3 (en) | A cmos differential driver | |
JPS57195381A (en) | Semiconductor memory | |
JPS5792908A (en) | High-frequency high-output hybrid integrated circuit | |
JPS6453615A (en) | Transistor type high frequency power source | |
JPS5637717A (en) | Amplifier | |
JPS6444611A (en) | High efficient semiconductor amplifier | |
JPS6450602A (en) | High frequency/high output transistor | |
JPS6468018A (en) | Output circuit | |
MXPA02012960A (en) | Electronic circuit for converting a signal and amplifier incorporating same. |