JPS6474812A - High frequency power amplifier - Google Patents

High frequency power amplifier

Info

Publication number
JPS6474812A
JPS6474812A JP23305387A JP23305387A JPS6474812A JP S6474812 A JPS6474812 A JP S6474812A JP 23305387 A JP23305387 A JP 23305387A JP 23305387 A JP23305387 A JP 23305387A JP S6474812 A JPS6474812 A JP S6474812A
Authority
JP
Japan
Prior art keywords
sides
amplifiers
line
low impedance
connects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23305387A
Other languages
Japanese (ja)
Inventor
Hisafumi Okubo
Shiyuuji Kobayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23305387A priority Critical patent/JPS6474812A/en
Publication of JPS6474812A publication Critical patent/JPS6474812A/en
Pending legal-status Critical Current

Links

Landscapes

  • Microwave Amplifiers (AREA)

Abstract

PURPOSE:To simplify external connection and to realize the miniaturization of a device and the reduction of output loss, by arranging two synthesized lines at an output side by confronting their low impedance sides with each other, and coupling the low impedance side with a line by a T-branching path. CONSTITUTION:The gate and the drains of amplifiers (FET) A1-A12 are connected by a distributor 5 and asynthesizer 6. The distributor 5 connects the amplifiers (FET chip) A1-A6 to a distribution line 1a, and connects the amplifiers A7-A12 to a distribution line 1b. In such a case, the high impedance sides of the lines 1a and 1b are confronted and arranged symmetrically, and the low impedance sides are connected to an input line via the T-branching path 3. The synthesizer 6 connects the amplifiers A1-A6 to a synthesizing line 2a, and connects the amplifiers A7-A12 to a synthesizing line 2b. The lines 2a and 2b are arranged symmetrically by confronting their low impedance sides with each other, and the low impedance sides are connected to an output line via the T-branching path 4. The FETs A1-A6 and the FETs A7-A12 are operated with different phases at the distribution sides, however, their phases are corrected at the synthesizing sides.
JP23305387A 1987-09-17 1987-09-17 High frequency power amplifier Pending JPS6474812A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23305387A JPS6474812A (en) 1987-09-17 1987-09-17 High frequency power amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23305387A JPS6474812A (en) 1987-09-17 1987-09-17 High frequency power amplifier

Publications (1)

Publication Number Publication Date
JPS6474812A true JPS6474812A (en) 1989-03-20

Family

ID=16949058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23305387A Pending JPS6474812A (en) 1987-09-17 1987-09-17 High frequency power amplifier

Country Status (1)

Country Link
JP (1) JPS6474812A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5075645A (en) * 1989-08-04 1991-12-24 Matsushita Electric Industrial Co., Ltd. Matching circuit for high frequency transistor
JPH09312534A (en) * 1996-05-20 1997-12-02 Mitsubishi Electric Corp Microwave amplifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5075645A (en) * 1989-08-04 1991-12-24 Matsushita Electric Industrial Co., Ltd. Matching circuit for high frequency transistor
JPH09312534A (en) * 1996-05-20 1997-12-02 Mitsubishi Electric Corp Microwave amplifier

Similar Documents

Publication Publication Date Title
MY120331A (en) Impedance matching circuit for power amplifier
IE822797L (en) Cmis semiconductor device with two power supplies
JPS5641587A (en) Cmos sense amplifying circuit
AU629685B2 (en) Amplifying with directly coupled, cascaded amplifiers
GB1376462A (en) Amplifiers
SE8504394L (en) EFFECTIVE AMPLIFIER
SE9502479D0 (en) Transmission line switch for signal amplifiers operating at radio frequency
KR890004212B1 (en) Complementary logic circuit
JPS6474812A (en) High frequency power amplifier
FI962420A (en) Low noise amplifier
JPS5451446A (en) Directional coupler
EP0346020A3 (en) Drive amplifier circuit
TW431067B (en) Single source differential circuit
EP0176331A3 (en) Power divider/combiner circuit
GB1520078A (en) Integrated mis driver stage
JPS5621419A (en) Logical operation circuit
EP0347048A3 (en) A cmos differential driver
JPS57195381A (en) Semiconductor memory
JPS5792908A (en) High-frequency high-output hybrid integrated circuit
JPS6453615A (en) Transistor type high frequency power source
JPS5637717A (en) Amplifier
JPS6444611A (en) High efficient semiconductor amplifier
JPS6450602A (en) High frequency/high output transistor
JPS6468018A (en) Output circuit
MXPA02012960A (en) Electronic circuit for converting a signal and amplifier incorporating same.