JPS5792908A - High-frequency high-output hybrid integrated circuit - Google Patents

High-frequency high-output hybrid integrated circuit

Info

Publication number
JPS5792908A
JPS5792908A JP17066680A JP17066680A JPS5792908A JP S5792908 A JPS5792908 A JP S5792908A JP 17066680 A JP17066680 A JP 17066680A JP 17066680 A JP17066680 A JP 17066680A JP S5792908 A JPS5792908 A JP S5792908A
Authority
JP
Japan
Prior art keywords
high frequency
signals
output
trs
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17066680A
Other languages
Japanese (ja)
Inventor
Yoshihiko Watari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17066680A priority Critical patent/JPS5792908A/en
Publication of JPS5792908A publication Critical patent/JPS5792908A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To reduce the power capacity of individual transistors and to enlarge input and output impedances, by dividing an input signal into two signals having phases opposite to each other, amplifying these divided signals, and by synthesizing them in the push-pull system. CONSTITUTION:The high frequency signal applied to an input terminal 1 is divided into two signals having phase opposite to each other by a high frequency transistor (TR)10. One signal is applied to a TR2a through a matching circuit 6a and is amplified by TRs 2a, 3a, and 4a and is applied to a high frequency transformer 11. Similarly, the other is amplified by TRs 2b, 3b, and 4b and is applied to the high frequency transformer 11. The high frequency transformer 11 synthesizes two amplified signals having phases opposite to each other and outputs the synthesized signal from an output terminal 5. At this time, since it is sufficient if power capacities of output TRs 4a and 4b are half, the output impedance becomes twice.
JP17066680A 1980-12-01 1980-12-01 High-frequency high-output hybrid integrated circuit Pending JPS5792908A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17066680A JPS5792908A (en) 1980-12-01 1980-12-01 High-frequency high-output hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17066680A JPS5792908A (en) 1980-12-01 1980-12-01 High-frequency high-output hybrid integrated circuit

Publications (1)

Publication Number Publication Date
JPS5792908A true JPS5792908A (en) 1982-06-09

Family

ID=15909114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17066680A Pending JPS5792908A (en) 1980-12-01 1980-12-01 High-frequency high-output hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPS5792908A (en)

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