JPS6474790A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPS6474790A JPS6474790A JP23337087A JP23337087A JPS6474790A JP S6474790 A JPS6474790 A JP S6474790A JP 23337087 A JP23337087 A JP 23337087A JP 23337087 A JP23337087 A JP 23337087A JP S6474790 A JPS6474790 A JP S6474790A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- buried layer
- xalxas
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To prevent the leakage of currents, and to equalize distribution in a wafer of threshold currents by forming two trenches on both sides of a mesa section, removing only multilayer structure in the trench sections and growing a buried layer. CONSTITUTION:A resist 20 is applied onto the surface of a cap layer 5 in a substrate 1 in which an n-type GaAs layer having carrier concentration of 1X10<18>cm<-3> or more is grown on p-type GaAs, and parallel stripe windows 21 are bored on both sides of a V-channel. Layers are etched up to an n-GaAs current blocking layer 6 by using an etchant (H2O:H2O2;H2SO4=50:2:1) through the windows 21. The width of the etched trenches 14, 15 is brought to 5-20mum at that time. An i-Ga1-xAlxAs (x=0.85 and undoped or Ge-doped) first buried layer 7, a p-Ga1-xAlxAs (x=0.2) second buried layer 8 and an n-GaAs contact layer 9 are grown through a liquid phase epitaxial growth method in succession.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23337087A JPS6474790A (en) | 1987-09-17 | 1987-09-17 | Semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23337087A JPS6474790A (en) | 1987-09-17 | 1987-09-17 | Semiconductor laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6474790A true JPS6474790A (en) | 1989-03-20 |
Family
ID=16954062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23337087A Pending JPS6474790A (en) | 1987-09-17 | 1987-09-17 | Semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6474790A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5543355A (en) * | 1994-04-18 | 1996-08-06 | Nec Corporation | Method for manufacturing semiconductor laser device having current blocking layers |
-
1987
- 1987-09-17 JP JP23337087A patent/JPS6474790A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5543355A (en) * | 1994-04-18 | 1996-08-06 | Nec Corporation | Method for manufacturing semiconductor laser device having current blocking layers |
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