JPS6474790A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS6474790A
JPS6474790A JP23337087A JP23337087A JPS6474790A JP S6474790 A JPS6474790 A JP S6474790A JP 23337087 A JP23337087 A JP 23337087A JP 23337087 A JP23337087 A JP 23337087A JP S6474790 A JPS6474790 A JP S6474790A
Authority
JP
Japan
Prior art keywords
layer
gaas
buried layer
xalxas
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23337087A
Other languages
Japanese (ja)
Inventor
Saburo Yamamoto
Masahiro Hosoda
Kazuaki Sasaki
Masaki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP23337087A priority Critical patent/JPS6474790A/en
Publication of JPS6474790A publication Critical patent/JPS6474790A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the leakage of currents, and to equalize distribution in a wafer of threshold currents by forming two trenches on both sides of a mesa section, removing only multilayer structure in the trench sections and growing a buried layer. CONSTITUTION:A resist 20 is applied onto the surface of a cap layer 5 in a substrate 1 in which an n-type GaAs layer having carrier concentration of 1X10<18>cm<-3> or more is grown on p-type GaAs, and parallel stripe windows 21 are bored on both sides of a V-channel. Layers are etched up to an n-GaAs current blocking layer 6 by using an etchant (H2O:H2O2;H2SO4=50:2:1) through the windows 21. The width of the etched trenches 14, 15 is brought to 5-20mum at that time. An i-Ga1-xAlxAs (x=0.85 and undoped or Ge-doped) first buried layer 7, a p-Ga1-xAlxAs (x=0.2) second buried layer 8 and an n-GaAs contact layer 9 are grown through a liquid phase epitaxial growth method in succession.
JP23337087A 1987-09-17 1987-09-17 Semiconductor laser element Pending JPS6474790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23337087A JPS6474790A (en) 1987-09-17 1987-09-17 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23337087A JPS6474790A (en) 1987-09-17 1987-09-17 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS6474790A true JPS6474790A (en) 1989-03-20

Family

ID=16954062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23337087A Pending JPS6474790A (en) 1987-09-17 1987-09-17 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS6474790A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5543355A (en) * 1994-04-18 1996-08-06 Nec Corporation Method for manufacturing semiconductor laser device having current blocking layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5543355A (en) * 1994-04-18 1996-08-06 Nec Corporation Method for manufacturing semiconductor laser device having current blocking layers

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