JPS6472043A - Growth rate monitoring apparatus and method for molecular beam epitaxy - Google Patents

Growth rate monitoring apparatus and method for molecular beam epitaxy

Info

Publication number
JPS6472043A
JPS6472043A JP63204913A JP20491388A JPS6472043A JP S6472043 A JPS6472043 A JP S6472043A JP 63204913 A JP63204913 A JP 63204913A JP 20491388 A JP20491388 A JP 20491388A JP S6472043 A JPS6472043 A JP S6472043A
Authority
JP
Japan
Prior art keywords
electrons
light
thin film
substrate
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63204913A
Other languages
English (en)
Inventor
Enu Ekusutain Jieimusu
Uetsubu Kurisutofuaa
Rin Uen Shiyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of JPS6472043A publication Critical patent/JPS6472043A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP63204913A 1987-09-08 1988-08-19 Growth rate monitoring apparatus and method for molecular beam epitaxy Pending JPS6472043A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9424787A 1987-09-08 1987-09-08

Publications (1)

Publication Number Publication Date
JPS6472043A true JPS6472043A (en) 1989-03-16

Family

ID=22244004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63204913A Pending JPS6472043A (en) 1987-09-08 1988-08-19 Growth rate monitoring apparatus and method for molecular beam epitaxy

Country Status (2)

Country Link
EP (1) EP0307096A3 (ja)
JP (1) JPS6472043A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09121065A (ja) * 1995-10-25 1997-05-06 Nec Corp 超格子構造磁性膜及びその製造方法
JP2011247870A (ja) * 2010-04-28 2011-12-08 Hamamatsu Photonics Kk Ｘ線光電子分光装置およびｘ線光電子分光方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106769889A (zh) * 2017-01-04 2017-05-31 南京大学 一种集成生长与测量的分子束外延生长系统

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4159919A (en) * 1978-01-16 1979-07-03 Bell Telephone Laboratories, Incorporated Molecular beam epitaxy using premixing
US4434025A (en) * 1981-06-04 1984-02-28 Robillard Jean J Controlling crystallinity and thickness of monocrystalline layer by use of an elliptically polarized beam of light
GB2130716A (en) * 1982-11-26 1984-06-06 Philips Electronic Associated Method of determining the composition of an alloy film grown by a layer-by layer process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09121065A (ja) * 1995-10-25 1997-05-06 Nec Corp 超格子構造磁性膜及びその製造方法
JP2011247870A (ja) * 2010-04-28 2011-12-08 Hamamatsu Photonics Kk Ｘ線光電子分光装置およびｘ線光電子分光方法

Also Published As

Publication number Publication date
EP0307096A2 (en) 1989-03-15
EP0307096A3 (en) 1990-12-05

Similar Documents

Publication Publication Date Title
Yamamoto et al. Characterization of ZnO piezoelectric films prepared by rf planar‐magnetron sputtering
US5725671A (en) Apparatus for manufacturing chalcopyrite film
US5754297A (en) Method and apparatus for monitoring the deposition rate of films during physical vapor deposition
US4719501A (en) Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers
US5965904A (en) Semiconductor device comprising silicon semiconductor layer
US4057476A (en) Thin film photovoltaic diodes and method for making same
JP2000512794A (ja) 陽極の窓領域が薄いモノリシックシリコン膜により形成される化学線源
US5506426A (en) Compound semiconductor, a method for producing a thin film thereof, and a semiconductor device having the thin film
US4724106A (en) Process for forming organic film
DE112016004462T5 (de) Positionsabweichungsdetektionsvorrichtung, Gasepitaxievorrichtung und Positionsabweichungsdetektionsverfahren
JPS6472043A (en) Growth rate monitoring apparatus and method for molecular beam epitaxy
US8461481B2 (en) Methods and apparatus for reducing variations in the laser intensity during scribing a photovoltaic device
EP0534459B1 (en) A method for producing a compound semiconductor for thin film
JPS5619030A (en) Production of liquid crystal display element
Thomas et al. Transmissive‐mode silicon field emission array photoemitter
US4803369A (en) Purification device for charged particle beam diaphragm
JP2002231984A (ja) 透明導電膜の成膜方法、半導体層の欠陥領域補償方法、光起電力素子、及びその製造方法
JPH04241481A (ja) ヘテロエピタキシャル接合素子及びその製造方法
JP3422724B2 (ja) 圧電素子の周波数調整装置
JPS57121219A (en) Manufacture of semiconductor device
JPH0729884A (ja) 基板表面のイオンエッチング処理および薄膜形成方法
JPS5799723A (en) Forming method for compound semiconductor thin film
RU2001503C1 (ru) Способ изготовлени пьезоэлектрических пластин и устройство дл его осуществлени
Das et al. Controlled cadmium telluride thin films for solar cells applications. First quarterly report, June 1, 1980-September 1, 1980
Hench et al. Process control of vacuum‐deposited CdS for the fabrication of reproducible 8% efficient solar cells