JPS64633A - Electron beam exposure device - Google Patents

Electron beam exposure device

Info

Publication number
JPS64633A
JPS64633A JP62155207A JP15520787A JPS64633A JP S64633 A JPS64633 A JP S64633A JP 62155207 A JP62155207 A JP 62155207A JP 15520787 A JP15520787 A JP 15520787A JP S64633 A JPS64633 A JP S64633A
Authority
JP
Japan
Prior art keywords
electron beam
aperture
detection piece
fluctuation
exposure device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62155207A
Other languages
Japanese (ja)
Other versions
JPH01633A (en
Inventor
Takao Nishiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62155207A priority Critical patent/JPS64633A/en
Publication of JPH01633A publication Critical patent/JPH01633A/en
Publication of JPS64633A publication Critical patent/JPS64633A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To easily grasp the size fluctuation of a drawing pattern due to brightness fluctuation by detecting and monitoring an electron beam irradiation amount on an aperture provided on the way of an optical path, an electron beam exposure device inclined in a semiconductor integrated circuit.
CONSTITUTION: A beam throttling aperture 2 is provided on the way of an optical path for detecting an amount of electrons hitting the aperture by means of a detection unit 7. A detection piece 9, of the detection part 7, connected to the aperture 2 is made of a conductor for getting rid of influence of an electron beam, and earthed. A magnetic field is given in advance to the detection piece 9 in the vertical direction (H direction). Hall potential is generated by the electron beam in the vertical direction of the magnetic field and a current due to the current flowing from the aperture 2 to the detection piece 9. This is detected by a potentiometer 11 for being constantly monitored by a treatment unit 8. Thereby, the irradiation brightness fluctuation by the electron beam is known so as to simply know the size fluctuation of a drawing pattern.
COPYRIGHT: (C)1989,JPO&Japio
JP62155207A 1987-06-22 1987-06-22 Electron beam exposure device Pending JPS64633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62155207A JPS64633A (en) 1987-06-22 1987-06-22 Electron beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62155207A JPS64633A (en) 1987-06-22 1987-06-22 Electron beam exposure device

Publications (2)

Publication Number Publication Date
JPH01633A JPH01633A (en) 1989-01-05
JPS64633A true JPS64633A (en) 1989-01-05

Family

ID=15600846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62155207A Pending JPS64633A (en) 1987-06-22 1987-06-22 Electron beam exposure device

Country Status (1)

Country Link
JP (1) JPS64633A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012114127A (en) * 2010-11-19 2012-06-14 Nuflare Technology Inc Charged particle beam lithography apparatus and charged particle beam lithography method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012114127A (en) * 2010-11-19 2012-06-14 Nuflare Technology Inc Charged particle beam lithography apparatus and charged particle beam lithography method

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