JPS6462655A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPS6462655A JPS6462655A JP21992587A JP21992587A JPS6462655A JP S6462655 A JPS6462655 A JP S6462655A JP 21992587 A JP21992587 A JP 21992587A JP 21992587 A JP21992587 A JP 21992587A JP S6462655 A JPS6462655 A JP S6462655A
- Authority
- JP
- Japan
- Prior art keywords
- barrier layer
- layer
- thin films
- enhanced
- laminating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08264—Silicon-based comprising seven or more silicon-based layers
- G03G5/08271—Silicon-based comprising seven or more silicon-based layers at least one with varying composition
Abstract
PURPOSE:To obtain a photosensitive body enhanced in transferability of carriers, not reduced in that in the case of enlarging film thickness and not shortened in life and good in acceptance potential by using superlattice structure formed by laminating thin films different in optical band gap from each other for a barrier layer. CONSTITUTION:The electrophotographic sensitive body formed by laminating on a conductive substrate 1 the barrier layer 2 and a photoconductive layer 3, and the barrier layer 2 is made of amorphous silicon and/or microcrystalline silicon and formed by alternately laminating the first thin films each containing at least one of conduction type governing elements and the second thin films each containing at least one of C, O, and N, in a concentration distribution changed in the layer thickness direction in each layer, in life and enhanced in transferability by the superlattice structure of the barrier layer 2, and the electrophotographic sensitive body to be remarkably enhanced in sensitivity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21992587A JPS6462655A (en) | 1987-09-02 | 1987-09-02 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21992587A JPS6462655A (en) | 1987-09-02 | 1987-09-02 | Electrophotographic sensitive body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6462655A true JPS6462655A (en) | 1989-03-09 |
Family
ID=16743167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21992587A Pending JPS6462655A (en) | 1987-09-02 | 1987-09-02 | Electrophotographic sensitive body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6462655A (en) |
-
1987
- 1987-09-02 JP JP21992587A patent/JPS6462655A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0814503A3 (en) | Solid state radiation detector | |
JPS5711351A (en) | Electrostatic copying machine | |
JPS5778167A (en) | Charge transfer area image sensor | |
JPS55159445A (en) | Electrophotographic receptor | |
JPS56135980A (en) | Photoelectric conversion element | |
JPS56157075A (en) | Photoelectric transducing device | |
JPS6462655A (en) | Electrophotographic sensitive body | |
JPS6462659A (en) | Electrophotographic sensitive body | |
JPS6462654A (en) | Electrophotographic sensitive body | |
JPS6462658A (en) | Electrophotographic sensitive body | |
JPS6462653A (en) | Electrophotographic sensitive body | |
JPS6462657A (en) | Electrophotographic sensitive body | |
JPS6462652A (en) | Electrophotographic sensitive body | |
JPS6462660A (en) | Electrophotographic sensitive body | |
JPS6462656A (en) | Electrophotographic sensitive body | |
CA2051778A1 (en) | Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby | |
JPS5614241A (en) | Electrophotographic receptor | |
JPS5721875A (en) | Photosensor | |
JPS6459235A (en) | Electrophotographic sensitive body | |
EP0618508A4 (en) | Electrophotographic photoreceptor provided with light-receiving layer made of non-single crystal silicon and having columnar structure regions, and manufacturing method therefor. | |
JPS5778545A (en) | Electrophotographic image forming member | |
JPS5739569A (en) | Solid state image pickup device | |
JPS6459236A (en) | Electrophotographic sensitive body | |
JPS6459234A (en) | Electrophotographic sensitive body | |
JPS6459237A (en) | Electrophotographic sensitive body |