JPS6459729A - Manufacture of superconducting thin film - Google Patents

Manufacture of superconducting thin film

Info

Publication number
JPS6459729A
JPS6459729A JP62216815A JP21681587A JPS6459729A JP S6459729 A JPS6459729 A JP S6459729A JP 62216815 A JP62216815 A JP 62216815A JP 21681587 A JP21681587 A JP 21681587A JP S6459729 A JPS6459729 A JP S6459729A
Authority
JP
Japan
Prior art keywords
thin film
superconducting thin
discharge
metal chelate
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62216815A
Other languages
English (en)
Other versions
JPH0791152B2 (ja
Inventor
Masaki Aoki
Hideo Torii
Akiyuki Fujii
Toru Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62216815A priority Critical patent/JPH0791152B2/ja
Publication of JPS6459729A publication Critical patent/JPS6459729A/ja
Publication of JPH0791152B2 publication Critical patent/JPH0791152B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
JP62216815A 1987-08-31 1987-08-31 超伝導体薄膜の製造方法 Expired - Fee Related JPH0791152B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62216815A JPH0791152B2 (ja) 1987-08-31 1987-08-31 超伝導体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62216815A JPH0791152B2 (ja) 1987-08-31 1987-08-31 超伝導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS6459729A true JPS6459729A (en) 1989-03-07
JPH0791152B2 JPH0791152B2 (ja) 1995-10-04

Family

ID=16694323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62216815A Expired - Fee Related JPH0791152B2 (ja) 1987-08-31 1987-08-31 超伝導体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPH0791152B2 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01304613A (ja) * 1988-05-31 1989-12-08 Fujikura Ltd 酸化物系超電導線材の製造方法
US5284824A (en) * 1988-03-16 1994-02-08 Kabushiki Kaisha Toshiba Method for manufacturing an oxide superconductor thin film
US5410358A (en) * 1991-07-23 1995-04-25 British Telecommunications Public Limited Company Method and device for frame interpolation of a moving image
US6110542A (en) * 1990-09-25 2000-08-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming a film
US6217661B1 (en) 1987-04-27 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6677001B1 (en) * 1986-11-10 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method and apparatus
JP2006152419A (ja) * 2004-12-01 2006-06-15 Ulvac Japan Ltd 成膜装置とこの成膜装置を含む複合型配線膜形成装置および薄膜製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6677001B1 (en) * 1986-11-10 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method and apparatus
US6217661B1 (en) 1987-04-27 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6423383B1 (en) 1987-04-27 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6838126B2 (en) 1987-04-27 2005-01-04 Semiconductor Energy Laboratory Co., Ltd. Method for forming I-carbon film
US5284824A (en) * 1988-03-16 1994-02-08 Kabushiki Kaisha Toshiba Method for manufacturing an oxide superconductor thin film
JPH01304613A (ja) * 1988-05-31 1989-12-08 Fujikura Ltd 酸化物系超電導線材の製造方法
US6110542A (en) * 1990-09-25 2000-08-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming a film
US6660342B1 (en) 1990-09-25 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Pulsed electromagnetic energy method for forming a film
US7125588B2 (en) 1990-09-25 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Pulsed plasma CVD method for forming a film
US5410358A (en) * 1991-07-23 1995-04-25 British Telecommunications Public Limited Company Method and device for frame interpolation of a moving image
JP2006152419A (ja) * 2004-12-01 2006-06-15 Ulvac Japan Ltd 成膜装置とこの成膜装置を含む複合型配線膜形成装置および薄膜製造方法

Also Published As

Publication number Publication date
JPH0791152B2 (ja) 1995-10-04

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees