JPS6458375A - Method for applying resist - Google Patents

Method for applying resist

Info

Publication number
JPS6458375A
JPS6458375A JP21566387A JP21566387A JPS6458375A JP S6458375 A JPS6458375 A JP S6458375A JP 21566387 A JP21566387 A JP 21566387A JP 21566387 A JP21566387 A JP 21566387A JP S6458375 A JPS6458375 A JP S6458375A
Authority
JP
Japan
Prior art keywords
resist
substrate
solvent
components
butoxy ethanol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21566387A
Other languages
Japanese (ja)
Other versions
JPH0824892B2 (en
Inventor
Hirozo Takegawa
Shinichi Aso
Ryutaro Akutagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62215663A priority Critical patent/JPH0824892B2/en
Publication of JPS6458375A publication Critical patent/JPS6458375A/en
Publication of JPH0824892B2 publication Critical patent/JPH0824892B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To apply resist uniformly to a substrate, by dropping resist on the substrate after solvent, which is employed as one or the components of resist, has been applied, while rotating the base material so as to be coated therewith. CONSTITUTION:When resist (e.g. novolak resin + diazo photosensitive agent + 2-butoxy ethanol) is applied to substrate (e.g. barium silicic acid glass), resist is dropped on the substrate to be applied thereto while said substrate is rotated. Before applying the resist, solvent (e.g. 2-butoxy ethanol), which is one of the components of the resist, is applied to the substrate. As a result, uniform film thickness is obtained without using such a large quantity of resist as conventionally required. Further, uniform thickness is obtained even on the periphery of the substrate.
JP62215663A 1987-08-28 1987-08-28 Resist coating method Expired - Lifetime JPH0824892B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62215663A JPH0824892B2 (en) 1987-08-28 1987-08-28 Resist coating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62215663A JPH0824892B2 (en) 1987-08-28 1987-08-28 Resist coating method

Publications (2)

Publication Number Publication Date
JPS6458375A true JPS6458375A (en) 1989-03-06
JPH0824892B2 JPH0824892B2 (en) 1996-03-13

Family

ID=16676114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62215663A Expired - Lifetime JPH0824892B2 (en) 1987-08-28 1987-08-28 Resist coating method

Country Status (1)

Country Link
JP (1) JPH0824892B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066616A (en) * 1989-06-14 1991-11-19 Hewlett-Packard Company Method for improving photoresist on wafers by applying fluid layer of liquid solvent
US6033728A (en) * 1993-05-13 2000-03-07 Fujitsu Limited Apparatus for spin coating, a method for spin coating and a method for manufacturing semiconductor device
WO2008123049A1 (en) * 2007-03-30 2008-10-16 Jsr Corporation Method for film formation, resin composition for use in the method, structure having insulating film, process for producing the structure, and electronic component
JP2009133924A (en) * 2007-11-28 2009-06-18 Jsr Corp Method for film formation and positive photosensitive resin composition for use in the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6085524A (en) * 1983-10-17 1985-05-15 Fujitsu Ltd Resist applying method
JPS61150332A (en) * 1984-12-25 1986-07-09 Toshiba Corp Method of applying semiconductor resist

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6085524A (en) * 1983-10-17 1985-05-15 Fujitsu Ltd Resist applying method
JPS61150332A (en) * 1984-12-25 1986-07-09 Toshiba Corp Method of applying semiconductor resist

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066616A (en) * 1989-06-14 1991-11-19 Hewlett-Packard Company Method for improving photoresist on wafers by applying fluid layer of liquid solvent
US6033728A (en) * 1993-05-13 2000-03-07 Fujitsu Limited Apparatus for spin coating, a method for spin coating and a method for manufacturing semiconductor device
WO2008123049A1 (en) * 2007-03-30 2008-10-16 Jsr Corporation Method for film formation, resin composition for use in the method, structure having insulating film, process for producing the structure, and electronic component
JP2009133924A (en) * 2007-11-28 2009-06-18 Jsr Corp Method for film formation and positive photosensitive resin composition for use in the same

Also Published As

Publication number Publication date
JPH0824892B2 (en) 1996-03-13

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