JPS6456315A - Method for improving film quality of silicon-compound coated film - Google Patents

Method for improving film quality of silicon-compound coated film

Info

Publication number
JPS6456315A
JPS6456315A JP21225687A JP21225687A JPS6456315A JP S6456315 A JPS6456315 A JP S6456315A JP 21225687 A JP21225687 A JP 21225687A JP 21225687 A JP21225687 A JP 21225687A JP S6456315 A JPS6456315 A JP S6456315A
Authority
JP
Japan
Prior art keywords
coated film
silicon
film
substrate
compound coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21225687A
Other languages
Japanese (ja)
Other versions
JPH0829932B2 (en
Inventor
Mitsuaki Minato
Isamu Hijikata
Akira Uehara
Muneo Nakayama
Akira Hashimoto
Toshihiro Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP21225687A priority Critical patent/JPH0829932B2/en
Publication of JPS6456315A publication Critical patent/JPS6456315A/en
Publication of JPH0829932B2 publication Critical patent/JPH0829932B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To increase closeness and anti-etching property of coated film and to improve film quality, by applying UV to silicon-compound coated film applied and formed on the surface of a substrate, under reduced pressure. CONSTITUTION:A coating soln. for forming silica coated film is prepared by dissolving silicone compd. [halogenosilane (e.g. SiCl4) or silane alkoxide (e.g. monomethoxytrichlorosilane)] in an org. solvent (e.g. methanol), applied on the substrate W and dried to form silicon-compound coated film 10. After the film-formed substrate W is put on a stage 8, a port 2 is closed by rising the stage 8 and the pressure in a chamber 3 is reduced through an exhaust pipe 7 to regulate the pressure to <=4,000Pa. Then, UV is applied from UV lamps 4 to the silicon-compound coated film 10 while heating the substrate W at 100-300 deg.C with a heater member 9 embedded in the stage 8.
JP21225687A 1987-08-26 1987-08-26 Method for improving film quality of silica-based coating Expired - Lifetime JPH0829932B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21225687A JPH0829932B2 (en) 1987-08-26 1987-08-26 Method for improving film quality of silica-based coating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21225687A JPH0829932B2 (en) 1987-08-26 1987-08-26 Method for improving film quality of silica-based coating

Publications (2)

Publication Number Publication Date
JPS6456315A true JPS6456315A (en) 1989-03-03
JPH0829932B2 JPH0829932B2 (en) 1996-03-27

Family

ID=16619560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21225687A Expired - Lifetime JPH0829932B2 (en) 1987-08-26 1987-08-26 Method for improving film quality of silica-based coating

Country Status (1)

Country Link
JP (1) JPH0829932B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5622896A (en) * 1994-10-18 1997-04-22 U.S. Philips Corporation Method of manufacturing a thin silicon-oxide layer
WO2005108468A1 (en) * 2004-05-11 2005-11-17 Jsr Corporation Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation
JP2006093657A (en) * 2004-07-09 2006-04-06 Jsr Corp Organic silica system film and forming method thereof, composition for forming insulating film of semiconductor apparatus, and wiring structure and semiconductor apparatus
JP2010149002A (en) * 2008-12-24 2010-07-08 National Institute Of Advanced Industrial Science & Technology Pervaporation separation membrane and method of manufacturing this membrane
JP2010232360A (en) * 2009-03-26 2010-10-14 Fujitsu Ltd Forming/manufacturing of insulating film, printed wiring board, and manufacturing method for printed wiring board
JP2017037169A (en) * 2015-08-10 2017-02-16 東京応化工業株式会社 Ultraviolet irradiation apparatus, resist pattern forming apparatus, ultraviolet irradiation method, and resist pattern forming method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4355939B2 (en) * 2004-07-23 2009-11-04 Ｊｓｒ株式会社 Composition for forming insulating film of semiconductor device and method for forming silica-based film
JP5120547B2 (en) 2006-02-02 2013-01-16 Ｊｓｒ株式会社 Organic silica film and method for forming the same, composition for forming insulating film of semiconductor device and method for manufacturing the same, and wiring structure and semiconductor device
JP5304033B2 (en) * 2007-08-31 2013-10-02 富士通株式会社 Manufacturing method of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5622896A (en) * 1994-10-18 1997-04-22 U.S. Philips Corporation Method of manufacturing a thin silicon-oxide layer
WO2005108468A1 (en) * 2004-05-11 2005-11-17 Jsr Corporation Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation
US8268403B2 (en) 2004-05-11 2012-09-18 Jsr Corporation Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation
JP2006093657A (en) * 2004-07-09 2006-04-06 Jsr Corp Organic silica system film and forming method thereof, composition for forming insulating film of semiconductor apparatus, and wiring structure and semiconductor apparatus
JP2010149002A (en) * 2008-12-24 2010-07-08 National Institute Of Advanced Industrial Science & Technology Pervaporation separation membrane and method of manufacturing this membrane
JP2010232360A (en) * 2009-03-26 2010-10-14 Fujitsu Ltd Forming/manufacturing of insulating film, printed wiring board, and manufacturing method for printed wiring board
JP2017037169A (en) * 2015-08-10 2017-02-16 東京応化工業株式会社 Ultraviolet irradiation apparatus, resist pattern forming apparatus, ultraviolet irradiation method, and resist pattern forming method

Also Published As

Publication number Publication date
JPH0829932B2 (en) 1996-03-27

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