JPS6452604A - Method for purifying silicon tetrafluoride gas - Google Patents

Method for purifying silicon tetrafluoride gas

Info

Publication number
JPS6452604A
JPS6452604A JP20826987A JP20826987A JPS6452604A JP S6452604 A JPS6452604 A JP S6452604A JP 20826987 A JP20826987 A JP 20826987A JP 20826987 A JP20826987 A JP 20826987A JP S6452604 A JPS6452604 A JP S6452604A
Authority
JP
Japan
Prior art keywords
vessel
sif4 gas
valves
interior
sif4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20826987A
Other languages
Japanese (ja)
Other versions
JPH0531489B2 (en
Inventor
Nobuhiko Koto
Hiroyuki Momotake
Isao Harada
Yukihiro Yoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP20826987A priority Critical patent/JPS6452604A/en
Publication of JPS6452604A publication Critical patent/JPS6452604A/en
Publication of JPH0531489B2 publication Critical patent/JPH0531489B2/ja
Granted legal-status Critical Current

Links

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25JLIQUEFACTION, SOLIDIFICATION OR SEPARATION OF GASES OR GASEOUS OR LIQUEFIED GASEOUS MIXTURES BY PRESSURE AND COLD TREATMENT OR BY BRINGING THEM INTO THE SUPERCRITICAL STATE
    • F25J3/00Processes or apparatus for separating the constituents of gaseous or liquefied gaseous mixtures involving the use of liquefaction or solidification
    • F25J3/08Separating gaseous impurities from gases or gaseous mixtures or from liquefied gases or liquefied gaseous mixtures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Silicon Compounds (AREA)
  • Separation By Low-Temperature Treatments (AREA)

Abstract

PURPOSE:To readily and efficiently obtain SiF4 gas useful as amorphous thin- film semiconductors, etc., in high purity, by cooling and solidifying the SiF4 gas containing low-boiling components as an impurity in a vessel and evacuating the interior of the vessel under a specific pressure. CONSTITUTION:A vessel 1 is heated at about 200 deg.C and then evacuated by a vacuum pump 4 until the internal pressure of the vessel 1 attains <=0.1Torr. The vessel 1 is subsequently dipped in a refrigerant layer 2. Valves 9 and 10 are opened to fill SiF4 gas in which H2S, SO2, etc., are previously removed therein. The vessel 1 is then cooled to -140--259 deg.C to cool and solidify the SiF4 gas. The valves 10 and 11 are subsequently opened to evacuate the interior of the vessel 1 for 10min-5hr by the pump 4 so as to provide <=2Torr internal pressure thereof. The valve 10 is then fully closed and the vessel 1 is taken out of the refrigerant layer 2 and returned to ordinary temperature to vaporize low-boiling impurities, such as H2, N2, O2, CH4 or CO, and afford the aimed high-purity SiF4 gas.
JP20826987A 1987-08-24 1987-08-24 Method for purifying silicon tetrafluoride gas Granted JPS6452604A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20826987A JPS6452604A (en) 1987-08-24 1987-08-24 Method for purifying silicon tetrafluoride gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20826987A JPS6452604A (en) 1987-08-24 1987-08-24 Method for purifying silicon tetrafluoride gas

Publications (2)

Publication Number Publication Date
JPS6452604A true JPS6452604A (en) 1989-02-28
JPH0531489B2 JPH0531489B2 (en) 1993-05-12

Family

ID=16553445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20826987A Granted JPS6452604A (en) 1987-08-24 1987-08-24 Method for purifying silicon tetrafluoride gas

Country Status (1)

Country Link
JP (1) JPS6452604A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7666379B2 (en) 2001-07-16 2010-02-23 Voltaix, Inc. Process and apparatus for removing Bronsted acid impurities in binary halides
JP2011504156A (en) * 2007-09-21 2011-02-03 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Method for purifying silicon tetrafluoride

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JOUNAL OF APPLIED PHYSICS=1965 *
MATHESON GAS DATA BOOK=1971 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7666379B2 (en) 2001-07-16 2010-02-23 Voltaix, Inc. Process and apparatus for removing Bronsted acid impurities in binary halides
JP2011504156A (en) * 2007-09-21 2011-02-03 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Method for purifying silicon tetrafluoride

Also Published As

Publication number Publication date
JPH0531489B2 (en) 1993-05-12

Similar Documents

Publication Publication Date Title
US4200621A (en) Sequential purification and crystal growth
US4971258A (en) Method of making high-purity fine particles of reactive metals and manufacturing vessel therefor
CN109867262A (en) A kind of synthesis system and synthetic method of diborane
JPS58209113A (en) Purification of reactive gas for semiconductor
CN102344126B (en) Synthesis method and synthesis container of phosphorus-silicon-cadmium polycrystal
CN109704297B (en) Method and device for preparing solid argon through liquid nitrogen
JPS6452604A (en) Method for purifying silicon tetrafluoride gas
CN211328764U (en) Trimethyl indium low temperature purification device
US3226270A (en) Method of crucible-free production of gallium arsenide rods from alkyl galliums and arsenic compounds at low temperatures
WO2004079787A3 (en) Apparatus and method for balanced pressure growth of group iii-v monocrystalline semiconductor compounds
US3340009A (en) Method of producing crystalline boron phosphide
US3098774A (en) Process for producing single crystal silicon surface layers
JPH11335195A (en) Production of compound semiconductor crystal and compound semiconductor crystal
US3556875A (en) Process for epitaxially growing gallium arsenide on germanium
US6516619B2 (en) Method of storing a gas
JPS59144899A (en) Reactive gas filling method
US3353912A (en) Preparation of high-purity materials
JPH09169502A (en) Production of high purity hydrochloric acid
JP2001180918A (en) Method of directly synthesizing indium phosphide
JPS6256572A (en) Formation of film
JPS59105804A (en) Purification of reactive gas for semiconductor
US3899572A (en) Process for producing phosphides
JPH01290512A (en) Method for recovering xenon from waste gas containing xenon
JP2002013696A (en) Method for solidifying and refining carbon dioxide and method of filling pressure vessel with carbon dioxide gas
JP2532313B2 (en) High pressure vessel

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term
FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 15

Free format text: PAYMENT UNTIL: 20080512