JPS6452604A - Method for purifying silicon tetrafluoride gas - Google Patents
Method for purifying silicon tetrafluoride gasInfo
- Publication number
- JPS6452604A JPS6452604A JP20826987A JP20826987A JPS6452604A JP S6452604 A JPS6452604 A JP S6452604A JP 20826987 A JP20826987 A JP 20826987A JP 20826987 A JP20826987 A JP 20826987A JP S6452604 A JPS6452604 A JP S6452604A
- Authority
- JP
- Japan
- Prior art keywords
- vessel
- sif4 gas
- valves
- interior
- sif4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25J—LIQUEFACTION, SOLIDIFICATION OR SEPARATION OF GASES OR GASEOUS OR LIQUEFIED GASEOUS MIXTURES BY PRESSURE AND COLD TREATMENT OR BY BRINGING THEM INTO THE SUPERCRITICAL STATE
- F25J3/00—Processes or apparatus for separating the constituents of gaseous or liquefied gaseous mixtures involving the use of liquefaction or solidification
- F25J3/08—Separating gaseous impurities from gases or gaseous mixtures or from liquefied gases or liquefied gaseous mixtures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Separation By Low-Temperature Treatments (AREA)
- Silicon Compounds (AREA)
Abstract
PURPOSE:To readily and efficiently obtain SiF4 gas useful as amorphous thin- film semiconductors, etc., in high purity, by cooling and solidifying the SiF4 gas containing low-boiling components as an impurity in a vessel and evacuating the interior of the vessel under a specific pressure. CONSTITUTION:A vessel 1 is heated at about 200 deg.C and then evacuated by a vacuum pump 4 until the internal pressure of the vessel 1 attains <=0.1Torr. The vessel 1 is subsequently dipped in a refrigerant layer 2. Valves 9 and 10 are opened to fill SiF4 gas in which H2S, SO2, etc., are previously removed therein. The vessel 1 is then cooled to -140--259 deg.C to cool and solidify the SiF4 gas. The valves 10 and 11 are subsequently opened to evacuate the interior of the vessel 1 for 10min-5hr by the pump 4 so as to provide <=2Torr internal pressure thereof. The valve 10 is then fully closed and the vessel 1 is taken out of the refrigerant layer 2 and returned to ordinary temperature to vaporize low-boiling impurities, such as H2, N2, O2, CH4 or CO, and afford the aimed high-purity SiF4 gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20826987A JPS6452604A (en) | 1987-08-24 | 1987-08-24 | Method for purifying silicon tetrafluoride gas |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20826987A JPS6452604A (en) | 1987-08-24 | 1987-08-24 | Method for purifying silicon tetrafluoride gas |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6452604A true JPS6452604A (en) | 1989-02-28 |
JPH0531489B2 JPH0531489B2 (en) | 1993-05-12 |
Family
ID=16553445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20826987A Granted JPS6452604A (en) | 1987-08-24 | 1987-08-24 | Method for purifying silicon tetrafluoride gas |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6452604A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7666379B2 (en) | 2001-07-16 | 2010-02-23 | Voltaix, Inc. | Process and apparatus for removing Bronsted acid impurities in binary halides |
JP2011504156A (en) * | 2007-09-21 | 2011-02-03 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Method for purifying silicon tetrafluoride |
-
1987
- 1987-08-24 JP JP20826987A patent/JPS6452604A/en active Granted
Non-Patent Citations (2)
Title |
---|
JOUNAL OF APPLIED PHYSICS=1965 * |
MATHESON GAS DATA BOOK=1971 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7666379B2 (en) | 2001-07-16 | 2010-02-23 | Voltaix, Inc. | Process and apparatus for removing Bronsted acid impurities in binary halides |
JP2011504156A (en) * | 2007-09-21 | 2011-02-03 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Method for purifying silicon tetrafluoride |
Also Published As
Publication number | Publication date |
---|---|
JPH0531489B2 (en) | 1993-05-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 15 Free format text: PAYMENT UNTIL: 20080512 |