JPS645050A - Capacitor and formation thereof - Google Patents
Capacitor and formation thereofInfo
- Publication number
- JPS645050A JPS645050A JP62159595A JP15959587A JPS645050A JP S645050 A JPS645050 A JP S645050A JP 62159595 A JP62159595 A JP 62159595A JP 15959587 A JP15959587 A JP 15959587A JP S645050 A JPS645050 A JP S645050A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- capacitor
- dielectric
- conductor
- comparison
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To provide a capacitor having a larger capacity in comparison with a conventional one having the same area and to improve the reliability of an LSI device, by forming an extremely thin film having high dielectric strength and high reliability in a well controlled manner, for providing a capacitor insulating film for a dynamic RAM. CONSTITUTION:A capacitor is composed of a first electrode 30 of a conductor or semiconductor, a dielectric on the electrode 30, and a second electrode 60 formed of a conductor or semiconductor on the dielectric. The dielectric consists of an Si nitride film 40 which is provided by nitriding the surface of the electrode 30 and an oxynitride film 50 composed of N and O. The electrode 30 is formed of highly doped polycrystalline Si, while the electrode 60 is formed of polycrystalline Si or a silicide of a metal. According to this arrangement, the capacitor is allowed to have a larger capacity in comparison with conventional capacitors having the same area. Thus, the reli ability of an LSI device can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62159595A JPS645050A (en) | 1987-06-29 | 1987-06-29 | Capacitor and formation thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62159595A JPS645050A (en) | 1987-06-29 | 1987-06-29 | Capacitor and formation thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS645050A true JPS645050A (en) | 1989-01-10 |
Family
ID=15697134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62159595A Pending JPS645050A (en) | 1987-06-29 | 1987-06-29 | Capacitor and formation thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS645050A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5132810A (en) * | 1989-05-29 | 1992-07-21 | Dainnippon Screen Mfg. Co., Ltd. | Flat bed scanning type image reader |
-
1987
- 1987-06-29 JP JP62159595A patent/JPS645050A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5132810A (en) * | 1989-05-29 | 1992-07-21 | Dainnippon Screen Mfg. Co., Ltd. | Flat bed scanning type image reader |
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