JPS644663B2 - - Google Patents
Info
- Publication number
- JPS644663B2 JPS644663B2 JP57050483A JP5048382A JPS644663B2 JP S644663 B2 JPS644663 B2 JP S644663B2 JP 57050483 A JP57050483 A JP 57050483A JP 5048382 A JP5048382 A JP 5048382A JP S644663 B2 JPS644663 B2 JP S644663B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- etching
- flat plate
- conductive path
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P50/00—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57050483A JPS58166726A (ja) | 1982-03-29 | 1982-03-29 | ウエ−ハエツチング装置 |
| GB08301399A GB2117324B (en) | 1982-03-29 | 1983-01-19 | An apparatus for chemical etching of wafer material |
| US06/460,355 US4417945A (en) | 1982-03-29 | 1983-01-24 | Apparatus for chemical etching of a wafer material |
| DE3306331A DE3306331C2 (de) | 1982-03-29 | 1983-02-23 | Verfahren und Vorrichtung zum Ätzen von Substrat-Material |
| FR8304942A FR2524008B1 (fr) | 1982-03-29 | 1983-03-25 | Appareil et procede pour le decapage chimique d'un article en forme de rondelle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57050483A JPS58166726A (ja) | 1982-03-29 | 1982-03-29 | ウエ−ハエツチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58166726A JPS58166726A (ja) | 1983-10-01 |
| JPS644663B2 true JPS644663B2 (cg-RX-API-DMAC10.html) | 1989-01-26 |
Family
ID=12860155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57050483A Granted JPS58166726A (ja) | 1982-03-29 | 1982-03-29 | ウエ−ハエツチング装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4417945A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS58166726A (cg-RX-API-DMAC10.html) |
| DE (1) | DE3306331C2 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2524008B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB2117324B (cg-RX-API-DMAC10.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017104298B4 (de) | 2016-03-22 | 2021-09-02 | Fuji Electric Co., Ltd. | Kunstharzzusammensetzung, deren Verwendung und Halbleiterbauelement |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5167718A (en) * | 1988-06-23 | 1992-12-01 | Jeffrey Stewart | Parylene deposition chamber and method of use |
| US6406544B1 (en) | 1988-06-23 | 2002-06-18 | Jeffrey Stewart | Parylene deposition chamber and method of use |
| US4945856A (en) * | 1988-06-23 | 1990-08-07 | Jeffrey Stewart | Parylene deposition chamber |
| US5078091A (en) * | 1988-06-23 | 1992-01-07 | Jeffrey Stewart | Parylene deposition chamber and method of use |
| JPH0785471B2 (ja) * | 1990-10-16 | 1995-09-13 | 信越半導体株式会社 | エッチング装置 |
| DE4103084A1 (de) * | 1991-02-01 | 1992-08-13 | Wacker Chemitronic | Magazin zur halterung von scheibenfoermigen werkstuecken, insbesondere halbleiterscheiben, bei der nasschemischen oberflaechenbehandlung in fluessigkeitsbaedern |
| US5733175A (en) * | 1994-04-25 | 1998-03-31 | Leach; Michael A. | Polishing a workpiece using equal velocity at all points overlapping a polisher |
| US5607341A (en) * | 1994-08-08 | 1997-03-04 | Leach; Michael A. | Method and structure for polishing a wafer during manufacture of integrated circuits |
| US5488833A (en) * | 1994-09-26 | 1996-02-06 | Stewart; Jeffrey | Tangential flow cold trap |
| US5882725A (en) * | 1997-07-01 | 1999-03-16 | Para Tech Coating, Inc. | Parylene deposition chamber including eccentric part tumbler |
| US5954888A (en) * | 1998-02-09 | 1999-09-21 | Speedfam Corporation | Post-CMP wet-HF cleaning station |
| DE19825381B4 (de) * | 1998-05-28 | 2004-10-28 | Institut für Halbleiterphysik Frankfurt (Oder) GmbH | Verfahren zur Handhabung von Wafern großen Durchmessers während eines Temperprozesses |
| US6737224B2 (en) | 2001-04-17 | 2004-05-18 | Jeffrey Stewart | Method of preparing thin supported films by vacuum deposition |
| US20030227057A1 (en) * | 2002-06-07 | 2003-12-11 | Lochtefeld Anthony J. | Strained-semiconductor-on-insulator device structures |
| JP4725767B2 (ja) * | 2004-08-12 | 2011-07-13 | 有限会社岡本光学加工所 | 光学材料の無歪み表面加工装置および表面加工技術 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2328533A (en) * | 1941-12-26 | 1943-08-31 | Alncin Inc | Glass article and method of manufacture thereof |
| US3437543A (en) * | 1965-03-09 | 1969-04-08 | Western Electric Co | Apparatus for polishing |
| DE1521794A1 (de) * | 1965-07-23 | 1969-10-23 | Ibm Deutschland | Vorrichtung zum chemischen Polieren von Halbleiterscheiben |
| US3549439A (en) * | 1967-09-15 | 1970-12-22 | North American Rockwell | Chemical lapping method |
-
1982
- 1982-03-29 JP JP57050483A patent/JPS58166726A/ja active Granted
-
1983
- 1983-01-19 GB GB08301399A patent/GB2117324B/en not_active Expired
- 1983-01-24 US US06/460,355 patent/US4417945A/en not_active Expired - Lifetime
- 1983-02-23 DE DE3306331A patent/DE3306331C2/de not_active Expired
- 1983-03-25 FR FR8304942A patent/FR2524008B1/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017104298B4 (de) | 2016-03-22 | 2021-09-02 | Fuji Electric Co., Ltd. | Kunstharzzusammensetzung, deren Verwendung und Halbleiterbauelement |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3306331A1 (de) | 1983-10-06 |
| GB8301399D0 (en) | 1983-02-23 |
| FR2524008A1 (fr) | 1983-09-30 |
| JPS58166726A (ja) | 1983-10-01 |
| DE3306331C2 (de) | 1986-04-24 |
| FR2524008B1 (fr) | 1987-06-12 |
| US4417945A (en) | 1983-11-29 |
| GB2117324A (en) | 1983-10-12 |
| GB2117324B (en) | 1985-04-11 |
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