JPS6442152A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6442152A
JPS6442152A JP19853487A JP19853487A JPS6442152A JP S6442152 A JPS6442152 A JP S6442152A JP 19853487 A JP19853487 A JP 19853487A JP 19853487 A JP19853487 A JP 19853487A JP S6442152 A JPS6442152 A JP S6442152A
Authority
JP
Japan
Prior art keywords
interconnection
photosensitive
aluminum
photolithography technique
hole pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19853487A
Other languages
Japanese (ja)
Inventor
Yasushi Jin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP19853487A priority Critical patent/JPS6442152A/en
Publication of JPS6442152A publication Critical patent/JPS6442152A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make through hole resistance the same as multilayer interconnection process using an inorganic material, by using a photosensitive polyimide resin as an interlayer insulating film of a multilayer interconnection and providing O2 plasma treatment before the interconnections of layers are connected. CONSTITUTION:Any device structure is formed on a silicon semiconductor substrate 1, and then a first interconnection 3 of aluminum is formed through a silicon dioxide film 2 thereon. Then, a photosensitive polymide resin 4 is applied and prebaked. A through hole pattern is formed by photolithography technique and ashed with O2 plasma 5 on the whole surface. Then, an aluminum interconnection of the second layer is deposited and a second interconnection 6 is patterned by the photolithography technique. As a result, it is possible to completely eliminate a residual element of the photosensitive polymide resin and impurities on the through hole pattern.
JP19853487A 1987-08-07 1987-08-07 Manufacture of semiconductor device Pending JPS6442152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19853487A JPS6442152A (en) 1987-08-07 1987-08-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19853487A JPS6442152A (en) 1987-08-07 1987-08-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6442152A true JPS6442152A (en) 1989-02-14

Family

ID=16392751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19853487A Pending JPS6442152A (en) 1987-08-07 1987-08-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6442152A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140520A (en) * 1990-04-30 1994-05-20 Internatl Business Mach Corp <Ibm> Formation method of multilayer conductor/insulator coplanar thin film using photosensitive polyimide polymer composition and semiconductor structure manufactured by said method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140520A (en) * 1990-04-30 1994-05-20 Internatl Business Mach Corp <Ibm> Formation method of multilayer conductor/insulator coplanar thin film using photosensitive polyimide polymer composition and semiconductor structure manufactured by said method

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