JPS6442152A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6442152A JPS6442152A JP19853487A JP19853487A JPS6442152A JP S6442152 A JPS6442152 A JP S6442152A JP 19853487 A JP19853487 A JP 19853487A JP 19853487 A JP19853487 A JP 19853487A JP S6442152 A JPS6442152 A JP S6442152A
- Authority
- JP
- Japan
- Prior art keywords
- interconnection
- photosensitive
- aluminum
- photolithography technique
- hole pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To make through hole resistance the same as multilayer interconnection process using an inorganic material, by using a photosensitive polyimide resin as an interlayer insulating film of a multilayer interconnection and providing O2 plasma treatment before the interconnections of layers are connected. CONSTITUTION:Any device structure is formed on a silicon semiconductor substrate 1, and then a first interconnection 3 of aluminum is formed through a silicon dioxide film 2 thereon. Then, a photosensitive polymide resin 4 is applied and prebaked. A through hole pattern is formed by photolithography technique and ashed with O2 plasma 5 on the whole surface. Then, an aluminum interconnection of the second layer is deposited and a second interconnection 6 is patterned by the photolithography technique. As a result, it is possible to completely eliminate a residual element of the photosensitive polymide resin and impurities on the through hole pattern.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19853487A JPS6442152A (en) | 1987-08-07 | 1987-08-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19853487A JPS6442152A (en) | 1987-08-07 | 1987-08-07 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6442152A true JPS6442152A (en) | 1989-02-14 |
Family
ID=16392751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19853487A Pending JPS6442152A (en) | 1987-08-07 | 1987-08-07 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6442152A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06140520A (en) * | 1990-04-30 | 1994-05-20 | Internatl Business Mach Corp <Ibm> | Formation method of multilayer conductor/insulator coplanar thin film using photosensitive polyimide polymer composition and semiconductor structure manufactured by said method |
-
1987
- 1987-08-07 JP JP19853487A patent/JPS6442152A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06140520A (en) * | 1990-04-30 | 1994-05-20 | Internatl Business Mach Corp <Ibm> | Formation method of multilayer conductor/insulator coplanar thin film using photosensitive polyimide polymer composition and semiconductor structure manufactured by said method |
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