JPS6439824A - Semiconductor circuit - Google Patents

Semiconductor circuit

Info

Publication number
JPS6439824A
JPS6439824A JP62195647A JP19564787A JPS6439824A JP S6439824 A JPS6439824 A JP S6439824A JP 62195647 A JP62195647 A JP 62195647A JP 19564787 A JP19564787 A JP 19564787A JP S6439824 A JPS6439824 A JP S6439824A
Authority
JP
Japan
Prior art keywords
mesfet
level shift
threshold voltage
switch means
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62195647A
Other languages
Japanese (ja)
Inventor
Tomihiro Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP62195647A priority Critical patent/JPS6439824A/en
Publication of JPS6439824A publication Critical patent/JPS6439824A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To hold the logical amplitude within a suitable range by executing a level shift of an output of a switch means by adjusting a buffer stage. CONSTITUTION:The cathode C of a Schottky barrier diode 30 is connected to a gate G of a MESFET 15 and an output of a switch means 21, and the anode A is connected to a source S of the MESFET 15 and a drain D of a MESFET 16. In this state, a level shift is executed by the MESFETs 15, 16 of a buffer stage 22, and a potential difference of this level shift goes to a reverse bias of the Schottky barrier diode 30. Accordingly, by allowing the gate width of the MESFET 16 to be wider than the gate width of the MESFET 15, or by setting a threshold voltage of the MESFET 16 to the ON side by a threshold voltage of the MESFET 15, a level shift being larger than an absolute value ¦VCS¦ can be obtained. In such a way, the allowance of an appropriate logical amplitude is obtained.
JP62195647A 1987-08-05 1987-08-05 Semiconductor circuit Pending JPS6439824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62195647A JPS6439824A (en) 1987-08-05 1987-08-05 Semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62195647A JPS6439824A (en) 1987-08-05 1987-08-05 Semiconductor circuit

Publications (1)

Publication Number Publication Date
JPS6439824A true JPS6439824A (en) 1989-02-10

Family

ID=16344651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62195647A Pending JPS6439824A (en) 1987-08-05 1987-08-05 Semiconductor circuit

Country Status (1)

Country Link
JP (1) JPS6439824A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5044148A (en) * 1989-01-27 1991-09-03 Murata Kikai Kabushiki Kaisha Yarn splicing method
US5149001A (en) * 1989-11-15 1992-09-22 Murata Kikai Kabushiki Kaisha Method and apparatus for separation of doubled yarn
WO2012111368A1 (en) 2011-02-18 2012-08-23 学校法人 東北学院 Heat conduction-type sensor having influence of temperature and kind of fluid corrected therein, and heat-type flow sensor and heat-type barometric sensor using the heat conduction-type sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5044148A (en) * 1989-01-27 1991-09-03 Murata Kikai Kabushiki Kaisha Yarn splicing method
US5149001A (en) * 1989-11-15 1992-09-22 Murata Kikai Kabushiki Kaisha Method and apparatus for separation of doubled yarn
WO2012111368A1 (en) 2011-02-18 2012-08-23 学校法人 東北学院 Heat conduction-type sensor having influence of temperature and kind of fluid corrected therein, and heat-type flow sensor and heat-type barometric sensor using the heat conduction-type sensor

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