JPS6439025A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS6439025A
JPS6439025A JP62195914A JP19591487A JPS6439025A JP S6439025 A JPS6439025 A JP S6439025A JP 62195914 A JP62195914 A JP 62195914A JP 19591487 A JP19591487 A JP 19591487A JP S6439025 A JPS6439025 A JP S6439025A
Authority
JP
Japan
Prior art keywords
permanent magnet
permanent magnets
sub
dry etching
permanent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62195914A
Other languages
English (en)
Other versions
JPH0618182B2 (ja
Inventor
Kazuyuki Tomita
Masuo Tanno
Yasuo Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62195914A priority Critical patent/JPH0618182B2/ja
Priority to KR1019880009898A priority patent/KR910009321B1/ko
Priority to US07/228,217 priority patent/US4906347A/en
Publication of JPS6439025A publication Critical patent/JPS6439025A/ja
Publication of JPH0618182B2 publication Critical patent/JPH0618182B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP62195914A 1987-08-05 1987-08-05 ドライエッチング装置 Expired - Fee Related JPH0618182B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62195914A JPH0618182B2 (ja) 1987-08-05 1987-08-05 ドライエッチング装置
KR1019880009898A KR910009321B1 (ko) 1987-08-05 1988-08-03 드라이에칭장치
US07/228,217 US4906347A (en) 1987-08-05 1988-08-04 Dry-etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62195914A JPH0618182B2 (ja) 1987-08-05 1987-08-05 ドライエッチング装置

Publications (2)

Publication Number Publication Date
JPS6439025A true JPS6439025A (en) 1989-02-09
JPH0618182B2 JPH0618182B2 (ja) 1994-03-09

Family

ID=16349086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62195914A Expired - Fee Related JPH0618182B2 (ja) 1987-08-05 1987-08-05 ドライエッチング装置

Country Status (3)

Country Link
US (1) US4906347A (ja)
JP (1) JPH0618182B2 (ja)
KR (1) KR910009321B1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302236A (en) * 1990-10-19 1994-04-12 Tokyo Electron Limited Method of etching object to be processed including oxide or nitride portion

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04196529A (ja) * 1990-11-28 1992-07-16 Toshiba Corp プラズマ処理装置
KR100297358B1 (ko) * 1991-07-23 2001-11-30 히가시 데쓰로 플라즈마에칭장치
US5455197A (en) * 1993-07-16 1995-10-03 Materials Research Corporation Control of the crystal orientation dependent properties of a film deposited on a semiconductor wafer
US5628889A (en) * 1994-09-06 1997-05-13 International Business Machines Corporation High power capacity magnetron cathode
US20040028837A1 (en) * 2002-06-28 2004-02-12 Tokyo Electron Limited Method and apparatus for plasma processing
US8567423B1 (en) * 2009-10-19 2013-10-29 James B. Combs, Jr. Pole mount for portable canopy assembly
CN103972016B (zh) * 2013-01-25 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 磁控管组件及磁控溅射设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61128526A (ja) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp プラズマエツチング装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900005347B1 (ko) * 1984-09-19 1990-07-27 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리장치
JPS6289864A (ja) * 1985-06-27 1987-04-24 Matsushita Electric Ind Co Ltd マグネトロンスパツタ装置
JPS6353261A (ja) * 1986-08-25 1988-03-07 Hitachi Ltd プラズマ処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61128526A (ja) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp プラズマエツチング装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302236A (en) * 1990-10-19 1994-04-12 Tokyo Electron Limited Method of etching object to be processed including oxide or nitride portion

Also Published As

Publication number Publication date
KR910009321B1 (ko) 1991-11-09
US4906347A (en) 1990-03-06
KR890004412A (ko) 1989-04-21
JPH0618182B2 (ja) 1994-03-09

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees