JPS6437871A - Solid-state image sensor - Google Patents

Solid-state image sensor

Info

Publication number
JPS6437871A
JPS6437871A JP62194652A JP19465287A JPS6437871A JP S6437871 A JPS6437871 A JP S6437871A JP 62194652 A JP62194652 A JP 62194652A JP 19465287 A JP19465287 A JP 19465287A JP S6437871 A JPS6437871 A JP S6437871A
Authority
JP
Japan
Prior art keywords
image sensor
printed board
solid
state image
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62194652A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62194652A priority Critical patent/JPS6437871A/en
Publication of JPS6437871A publication Critical patent/JPS6437871A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To form a wiring by a lead, to stick a transparent cap to a sensor section with adhesives or sealing the cap to the sensor section with transparent glass or a resin and to miniaturize a video camera and reduce cost thereof by directly assembling a solid-state image sensor onto a printed board. CONSTITUTION:A solid-state image sensor 2 is stuck onto the surface of a printed board 1 consisting of bakelite or ceramics with silver paste, etc. The image sensor 2 is connected to wirings for the printed board 1 by leads 3 consisting of aluminum, copper, etc., and assembled. A transparent cap 5 is pasted onto the surface of the printed board 1 including the image sensor 2 with adhesives 4 composed of epoxy adhesive low melting-point glass. The solid-state image sensor 12 is assembled onto the surface of the printed board 11 together with the leads 13 in another case, and the upper section of the image sensor 12 is molded with transparent glass or a resin 15, thus miniaturizing a video camera and reducing cost thereof.
JP62194652A 1987-08-04 1987-08-04 Solid-state image sensor Pending JPS6437871A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62194652A JPS6437871A (en) 1987-08-04 1987-08-04 Solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62194652A JPS6437871A (en) 1987-08-04 1987-08-04 Solid-state image sensor

Publications (1)

Publication Number Publication Date
JPS6437871A true JPS6437871A (en) 1989-02-08

Family

ID=16328069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62194652A Pending JPS6437871A (en) 1987-08-04 1987-08-04 Solid-state image sensor

Country Status (1)

Country Link
JP (1) JPS6437871A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0425191A (en) * 1990-05-18 1992-01-28 Sharp Corp Manufacture of semiconductor laser element
JPH05206427A (en) * 1992-01-09 1993-08-13 Nec Corp Solid-state image sensing device
US5255279A (en) * 1990-05-09 1993-10-19 Sharp Kabushiki Kaisha Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device
KR20040033193A (en) * 2002-10-11 2004-04-21 (주)그래픽테크노재팬 Semiconductor Package For Image Sensor And Making Method
KR20110106707A (en) * 2010-03-23 2011-09-29 삼성전자주식회사 Method for wafer level package and semiconductor device used the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5255279A (en) * 1990-05-09 1993-10-19 Sharp Kabushiki Kaisha Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device
US5360762A (en) * 1990-05-09 1994-11-01 Sharp Kabushiki Kaisha Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device
JPH0425191A (en) * 1990-05-18 1992-01-28 Sharp Corp Manufacture of semiconductor laser element
JPH05206427A (en) * 1992-01-09 1993-08-13 Nec Corp Solid-state image sensing device
KR20040033193A (en) * 2002-10-11 2004-04-21 (주)그래픽테크노재팬 Semiconductor Package For Image Sensor And Making Method
WO2004034472A1 (en) * 2002-10-11 2004-04-22 Graphic Techno Japan Co., Ltd. Semiconductor chip package for image sensor and method of making the same
KR20110106707A (en) * 2010-03-23 2011-09-29 삼성전자주식회사 Method for wafer level package and semiconductor device used the same

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