JPS6437030A - Semiconductor silicon single crystal wafer - Google Patents
Semiconductor silicon single crystal waferInfo
- Publication number
- JPS6437030A JPS6437030A JP19283987A JP19283987A JPS6437030A JP S6437030 A JPS6437030 A JP S6437030A JP 19283987 A JP19283987 A JP 19283987A JP 19283987 A JP19283987 A JP 19283987A JP S6437030 A JPS6437030 A JP S6437030A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- region
- damage
- given
- peripheral end
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
PURPOSE:To contrive improvement of the non-defective rate of integrated circuit devices by a method wherein a rear damage with strain due to a fact that contaminants to intrude into during a device manufacturing process are fixed on the rear side of a semiconductor wafer is prevented from being given to the wafer peripheral end part region having no connection to the yield of the device. CONSTITUTION:A semiconductor Si single crystal wafer 3, for example, is conveyed on a wafer conveying belt 4 facing its rear upward in a preprocess for mirror polishing and the region of its peripheral end part 1 is covered with a water cover 5. A beam consisting of fine SiO2 grains 7 is jetted at high speed through an SiO2 discharge nozzle 6 and the nozzle 6 performs a reciprocating motion at high speed in the directions shown by an arrow left and right by a width to correspond to the diameter of the wafer 3. Accordingly, no damage is given to the part 1 covered with the cover 5. As the damage to induce a crystal defect is not given to the rear peripheral end part region 1 in such a way, the occurrence of a slip defect from the region 1 is reduced and the occurrence defective chips for an integrated circuit device, which is caused by the slip, can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19283987A JPS6437030A (en) | 1987-07-31 | 1987-07-31 | Semiconductor silicon single crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19283987A JPS6437030A (en) | 1987-07-31 | 1987-07-31 | Semiconductor silicon single crystal wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6437030A true JPS6437030A (en) | 1989-02-07 |
Family
ID=16297837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19283987A Pending JPS6437030A (en) | 1987-07-31 | 1987-07-31 | Semiconductor silicon single crystal wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6437030A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007109838A (en) * | 2005-10-13 | 2007-04-26 | Disco Abrasive Syst Ltd | Device and its manufacturing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54148474A (en) * | 1978-05-15 | 1979-11-20 | Nec Corp | Manufacture of semiconductor device |
-
1987
- 1987-07-31 JP JP19283987A patent/JPS6437030A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54148474A (en) * | 1978-05-15 | 1979-11-20 | Nec Corp | Manufacture of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007109838A (en) * | 2005-10-13 | 2007-04-26 | Disco Abrasive Syst Ltd | Device and its manufacturing method |
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