JPS6436767A - Manufacture of zinc selenide - Google Patents
Manufacture of zinc selenideInfo
- Publication number
- JPS6436767A JPS6436767A JP18895287A JP18895287A JPS6436767A JP S6436767 A JPS6436767 A JP S6436767A JP 18895287 A JP18895287 A JP 18895287A JP 18895287 A JP18895287 A JP 18895287A JP S6436767 A JPS6436767 A JP S6436767A
- Authority
- JP
- Japan
- Prior art keywords
- zinc
- selenide
- zinc selenide
- nozzle
- vapor pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To manufacture good-quality zinc selenide having high purity and free from pores, etc., by setting up the outlet temp. of a nozzle through which raw materials are introduced into a reaction zone at a value in a specific region in correlation with zinc vapor pressure. CONSTITUTION:Zinc selenide is prepared by allowing zinc vapor to react with hydrogen selenide gas or selenium vapor. At this time, the outlet temp. of a nozzle for introducing raw materials into a reaction zone is set up in a region below the zinc equilibrium vapor pressure line I obtained based on an empirical equation in a relational diagram between zinc vapor pressure PZn and temp. By this method, high-purity zinc selenide causing no deposition of zinc selenide at the raw-material nozzle at the time of synthesis, free from pores, and useful as material for laser optical parts and light emitting diode substrate can be stably manufactured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18895287A JPS6436767A (en) | 1987-07-30 | 1987-07-30 | Manufacture of zinc selenide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18895287A JPS6436767A (en) | 1987-07-30 | 1987-07-30 | Manufacture of zinc selenide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6436767A true JPS6436767A (en) | 1989-02-07 |
Family
ID=16232792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18895287A Pending JPS6436767A (en) | 1987-07-30 | 1987-07-30 | Manufacture of zinc selenide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6436767A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4939058B2 (en) * | 2004-02-16 | 2012-05-23 | 株式会社カネカ | Method for producing transparent conductive film and method for producing tandem-type thin film photoelectric conversion device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57118004A (en) * | 1981-01-13 | 1982-07-22 | Agency Of Ind Science & Technol | Synthesizing method for znse compound in vapor phase |
| JPS61204377A (en) * | 1985-01-22 | 1986-09-10 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | Low pressure cvd method and apparatus |
-
1987
- 1987-07-30 JP JP18895287A patent/JPS6436767A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57118004A (en) * | 1981-01-13 | 1982-07-22 | Agency Of Ind Science & Technol | Synthesizing method for znse compound in vapor phase |
| JPS61204377A (en) * | 1985-01-22 | 1986-09-10 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | Low pressure cvd method and apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4939058B2 (en) * | 2004-02-16 | 2012-05-23 | 株式会社カネカ | Method for producing transparent conductive film and method for producing tandem-type thin film photoelectric conversion device |
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