JPS55132046A - Manufacture of high density poly-crystal - Google Patents

Manufacture of high density poly-crystal

Info

Publication number
JPS55132046A
JPS55132046A JP3899879A JP3899879A JPS55132046A JP S55132046 A JPS55132046 A JP S55132046A JP 3899879 A JP3899879 A JP 3899879A JP 3899879 A JP3899879 A JP 3899879A JP S55132046 A JPS55132046 A JP S55132046A
Authority
JP
Japan
Prior art keywords
crystal
high density
poly
purity
zns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3899879A
Other languages
Japanese (ja)
Other versions
JPS5944773B2 (en
Inventor
Akio Hara
Masahiro Kume
Tadashi Igarashi
Kenichiro Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP54038998A priority Critical patent/JPS5944773B2/en
Publication of JPS55132046A publication Critical patent/JPS55132046A/en
Publication of JPS5944773B2 publication Critical patent/JPS5944773B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02376—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a high density poly-crystal suitable to glass material, fluorescent material and photoconductive material for infrared equipment by heating and pressurizing further a compound of II-VI group elements produced through CVD process in a hydrostatic press. CONSTITUTION:With Ar gas 99.999% in purity as a carrier, hydrogen selenide 99.999% in purity is made reactive with zinc vapor from a fused zinc of the same purity at 800 deg.C in temperature and 100 Torr in pressure. Thus a ZnS poly-crystal is synthesized on a graphite substrate in a reaction furnace, which is placed in a container, heated by a heater and compressed with a vertical ram to high density. A high density of poly-crystal is obtainable otherwise through heating it by a heater and pressurizing isotropically with a high pressure gas like Ar at every containers. A high density of poly-crystal of not only ZnS but also ZnSe, ZnTe, CdS, CdSe, etc. is thus obtainable without allowing impurities to mix in.
JP54038998A 1979-03-31 1979-03-31 Method for manufacturing high-density polycrystalline material Expired JPS5944773B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54038998A JPS5944773B2 (en) 1979-03-31 1979-03-31 Method for manufacturing high-density polycrystalline material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54038998A JPS5944773B2 (en) 1979-03-31 1979-03-31 Method for manufacturing high-density polycrystalline material

Publications (2)

Publication Number Publication Date
JPS55132046A true JPS55132046A (en) 1980-10-14
JPS5944773B2 JPS5944773B2 (en) 1984-11-01

Family

ID=12540792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54038998A Expired JPS5944773B2 (en) 1979-03-31 1979-03-31 Method for manufacturing high-density polycrystalline material

Country Status (1)

Country Link
JP (1) JPS5944773B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957951A (en) * 1982-09-27 1984-04-03 住友電気工業株式会社 Manufacture of zns polycrystal body
JPS60216497A (en) * 1984-04-09 1985-10-29 セイコーエプソン株式会社 Thin film el display panel
US4584053A (en) * 1983-06-29 1986-04-22 Sumitomo Electric Industries, Ltd. Process for preparing ZnSe single crystal
US5126081A (en) * 1980-12-29 1992-06-30 Raytheon Company Polycrystalline zinc sulfide and zinc selenide articles having improved optical quality
CN103443658A (en) * 2012-03-09 2013-12-11 住友电气工业株式会社 Optical component and manufacturing method therefor

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
DENSIFICATION OF CASTINGS BY HOT ISOSTATIC PRESSING=1978 *
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA=1973 *
POWDER METALLURGY INTERNATIONAL=1978 *
PROCEEDING OF THE BRITISH CERAMIC SOCIETY=1969 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126081A (en) * 1980-12-29 1992-06-30 Raytheon Company Polycrystalline zinc sulfide and zinc selenide articles having improved optical quality
JPS5957951A (en) * 1982-09-27 1984-04-03 住友電気工業株式会社 Manufacture of zns polycrystal body
US4584053A (en) * 1983-06-29 1986-04-22 Sumitomo Electric Industries, Ltd. Process for preparing ZnSe single crystal
JPS60216497A (en) * 1984-04-09 1985-10-29 セイコーエプソン株式会社 Thin film el display panel
CN103443658A (en) * 2012-03-09 2013-12-11 住友电气工业株式会社 Optical component and manufacturing method therefor
EP2674792A4 (en) * 2012-03-09 2015-06-03 Sumitomo Electric Industries Optical component and manufacturing method therefor

Also Published As

Publication number Publication date
JPS5944773B2 (en) 1984-11-01

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