JPS6436124A - Transmission power control circuit in radio transmitter - Google Patents
Transmission power control circuit in radio transmitterInfo
- Publication number
- JPS6436124A JPS6436124A JP19038887A JP19038887A JPS6436124A JP S6436124 A JPS6436124 A JP S6436124A JP 19038887 A JP19038887 A JP 19038887A JP 19038887 A JP19038887 A JP 19038887A JP S6436124 A JPS6436124 A JP S6436124A
- Authority
- JP
- Japan
- Prior art keywords
- bit
- power control
- control circuit
- temperature
- control signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Transmitters (AREA)
Abstract
PURPOSE:To attain transmission power control under any temperature condition by providing a control means using a correction value corresponding to an output of a temperature sensing means to apply correction to the control signal thereby applying temperature compensation stably and simply. CONSTITUTION:A detection diode 3 detects an output voltage of a power amplifier 1, converts the voltage into a DC voltage, an A/D converter 4 applies A/D conversion to an output of a detection diode 3, a control circuit 5 compares the standard bit pattern of the power control signal with a bit pattern outputted from the A/D converter 4 and outputs a bit difference when any bit difference exists. The detection characteristic decrease of the detection diode 3 is given in advance to the control circuit 5, a thermister 9 senses the ambient temperature and the power control signal bit is corrected by using a correction value (bit) depending on the ambient temperature at that time. Thus, the temperature compensation is executed stably and simply under any temperature condition.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19038887A JPS6436124A (en) | 1987-07-31 | 1987-07-31 | Transmission power control circuit in radio transmitter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19038887A JPS6436124A (en) | 1987-07-31 | 1987-07-31 | Transmission power control circuit in radio transmitter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6436124A true JPS6436124A (en) | 1989-02-07 |
Family
ID=16257337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19038887A Pending JPS6436124A (en) | 1987-07-31 | 1987-07-31 | Transmission power control circuit in radio transmitter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6436124A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5402254A (en) * | 1990-10-17 | 1995-03-28 | Hitachi, Ltd. | Liquid crystal display device with TFTS in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61193524A (en) * | 1985-02-21 | 1986-08-28 | Oki Electric Ind Co Ltd | Power amplifier circuit |
JPS62203429A (en) * | 1986-03-04 | 1987-09-08 | Nec Corp | Transmission power control circuit |
-
1987
- 1987-07-31 JP JP19038887A patent/JPS6436124A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61193524A (en) * | 1985-02-21 | 1986-08-28 | Oki Electric Ind Co Ltd | Power amplifier circuit |
JPS62203429A (en) * | 1986-03-04 | 1987-09-08 | Nec Corp | Transmission power control circuit |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5402254A (en) * | 1990-10-17 | 1995-03-28 | Hitachi, Ltd. | Liquid crystal display device with TFTS in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon |
US5610738A (en) * | 1990-10-17 | 1997-03-11 | Hitachi, Ltd. | Method for making LCD device in which gate insulator of TFT is formed after the pixel electrode but before the video signal line |
US5671027A (en) * | 1990-10-17 | 1997-09-23 | Hitachi, Ltd. | LCD device with TFTs in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films and before the deposition of the silicon gate insulator |
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