JPS6435965A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6435965A JPS6435965A JP19077787A JP19077787A JPS6435965A JP S6435965 A JPS6435965 A JP S6435965A JP 19077787 A JP19077787 A JP 19077787A JP 19077787 A JP19077787 A JP 19077787A JP S6435965 A JPS6435965 A JP S6435965A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- layers
- predetermined voltage
- drains
- speed operation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To perform a high speed operation of a FET by utilizing a resonance tunnel effect. CONSTITUTION:A predetermined voltage is applied to a source S, and first and second drains D1, D2, and a predetermined voltage is applied to a gate G to move charge from a charge storage layer LS to quantum well channel layers LW1, LW2 by means of a resonance tunnel operation which penetrates the thicknesses of potential barrier layers LB1, LB2 under a gate electrode 1G. Accordingly, charge running times to the layers LW1, LW2, i.e., the first and second drains become very short for the charge required to substantially tunnel the extremely thin layers LB1, LB2. Thus, an ultrahigh speed operation can be achieved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19077787A JPS6435965A (en) | 1987-07-30 | 1987-07-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19077787A JPS6435965A (en) | 1987-07-30 | 1987-07-30 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6435965A true JPS6435965A (en) | 1989-02-07 |
Family
ID=16263556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19077787A Pending JPS6435965A (en) | 1987-07-30 | 1987-07-30 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6435965A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5416040A (en) * | 1993-11-15 | 1995-05-16 | Texas Instruments Incorporated | Method of making an integrated field effect transistor and resonant tunneling diode |
US5512764A (en) * | 1993-03-31 | 1996-04-30 | Texas Instruments Incorporated | Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications |
-
1987
- 1987-07-30 JP JP19077787A patent/JPS6435965A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5512764A (en) * | 1993-03-31 | 1996-04-30 | Texas Instruments Incorporated | Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications |
US5416040A (en) * | 1993-11-15 | 1995-05-16 | Texas Instruments Incorporated | Method of making an integrated field effect transistor and resonant tunneling diode |
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