JPS6435965A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6435965A
JPS6435965A JP19077787A JP19077787A JPS6435965A JP S6435965 A JPS6435965 A JP S6435965A JP 19077787 A JP19077787 A JP 19077787A JP 19077787 A JP19077787 A JP 19077787A JP S6435965 A JPS6435965 A JP S6435965A
Authority
JP
Japan
Prior art keywords
charge
layers
predetermined voltage
drains
speed operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19077787A
Other languages
Japanese (ja)
Inventor
Yasuhiro Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP19077787A priority Critical patent/JPS6435965A/en
Publication of JPS6435965A publication Critical patent/JPS6435965A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To perform a high speed operation of a FET by utilizing a resonance tunnel effect. CONSTITUTION:A predetermined voltage is applied to a source S, and first and second drains D1, D2, and a predetermined voltage is applied to a gate G to move charge from a charge storage layer LS to quantum well channel layers LW1, LW2 by means of a resonance tunnel operation which penetrates the thicknesses of potential barrier layers LB1, LB2 under a gate electrode 1G. Accordingly, charge running times to the layers LW1, LW2, i.e., the first and second drains become very short for the charge required to substantially tunnel the extremely thin layers LB1, LB2. Thus, an ultrahigh speed operation can be achieved.
JP19077787A 1987-07-30 1987-07-30 Semiconductor device Pending JPS6435965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19077787A JPS6435965A (en) 1987-07-30 1987-07-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19077787A JPS6435965A (en) 1987-07-30 1987-07-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6435965A true JPS6435965A (en) 1989-02-07

Family

ID=16263556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19077787A Pending JPS6435965A (en) 1987-07-30 1987-07-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6435965A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5416040A (en) * 1993-11-15 1995-05-16 Texas Instruments Incorporated Method of making an integrated field effect transistor and resonant tunneling diode
US5512764A (en) * 1993-03-31 1996-04-30 Texas Instruments Incorporated Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512764A (en) * 1993-03-31 1996-04-30 Texas Instruments Incorporated Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications
US5416040A (en) * 1993-11-15 1995-05-16 Texas Instruments Incorporated Method of making an integrated field effect transistor and resonant tunneling diode

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