JPS6435325A - Spectral sensor - Google Patents

Spectral sensor

Info

Publication number
JPS6435325A
JPS6435325A JP19316787A JP19316787A JPS6435325A JP S6435325 A JPS6435325 A JP S6435325A JP 19316787 A JP19316787 A JP 19316787A JP 19316787 A JP19316787 A JP 19316787A JP S6435325 A JPS6435325 A JP S6435325A
Authority
JP
Japan
Prior art keywords
film
light
photodiode elements
interference
wavelengths
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19316787A
Other languages
Japanese (ja)
Inventor
Masayuki Kamegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP19316787A priority Critical patent/JPS6435325A/en
Publication of JPS6435325A publication Critical patent/JPS6435325A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector

Abstract

PURPOSE:To spectrally detect light without requiring an intricate optical system by adopting the structure consisting in providing a light interference film consisting of SiO2, etc., on a substrate disposed with plural pieces of photodiode elements and changing the thickness of this film according to positions. CONSTITUTION:The photodiode elements 2 are disposed in one array state on the Si substrate 1. The SiO2 film 3 is provided as the light interference film on the substrate 1. This SiO2 film is graded in the arranging direction of the photodiode elements 2 and is changed in the thickness (t) in correspondence to the positions of the photodiode elements 2. The incident light on the light interference film 3 is reflected by the front and rear faces of the film and is thereby interfered with each other. The light of the wavelengths to intensify the amplitudes with each other is matched in phases by this interference and is detected by the photodiode elements 2 disposed under the film. Since the wavelengths intensified with each other by the interference vary with the thickness of the film, the wavelengths of the light detected by the photodiode elements 2 vary.
JP19316787A 1987-07-31 1987-07-31 Spectral sensor Pending JPS6435325A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19316787A JPS6435325A (en) 1987-07-31 1987-07-31 Spectral sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19316787A JPS6435325A (en) 1987-07-31 1987-07-31 Spectral sensor

Publications (1)

Publication Number Publication Date
JPS6435325A true JPS6435325A (en) 1989-02-06

Family

ID=16303407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19316787A Pending JPS6435325A (en) 1987-07-31 1987-07-31 Spectral sensor

Country Status (1)

Country Link
JP (1) JPS6435325A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003532102A (en) * 2000-05-01 2003-10-28 ネイダーランゼ、オルガニザティー、ボー、トゥーゲパストナトゥールウェテンシャッペルーク、オンダーツォーク、ティーエヌオー Measurement of wavelength change
JP2008232843A (en) * 2007-03-20 2008-10-02 Casio Comput Co Ltd Spectrum intensity measurement element
WO2013051374A1 (en) * 2011-10-04 2013-04-11 浜松ホトニクス株式会社 Spectroscopic sensor
WO2013172231A1 (en) * 2012-05-18 2013-11-21 浜松ホトニクス株式会社 Spectroscopic sensor
WO2013172230A1 (en) * 2012-05-18 2013-11-21 浜松ホトニクス株式会社 Spectral sensor
CN104272069A (en) * 2012-05-18 2015-01-07 浜松光子学株式会社 Spectroscopic sensor
JP2016122004A (en) * 2015-12-25 2016-07-07 セイコーエプソン株式会社 Spectroscopic sensor and pulse oximeter

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003532102A (en) * 2000-05-01 2003-10-28 ネイダーランゼ、オルガニザティー、ボー、トゥーゲパストナトゥールウェテンシャッペルーク、オンダーツォーク、ティーエヌオー Measurement of wavelength change
JP2008232843A (en) * 2007-03-20 2008-10-02 Casio Comput Co Ltd Spectrum intensity measurement element
WO2013051374A1 (en) * 2011-10-04 2013-04-11 浜松ホトニクス株式会社 Spectroscopic sensor
JP2013079873A (en) * 2011-10-04 2013-05-02 Hamamatsu Photonics Kk Spectral sensor
US10168213B2 (en) 2011-10-04 2019-01-01 Hamamatsu Photonics K.K. Spectroscopic sensor including interference filter unit having silicon oxide cavity
JP2013242178A (en) * 2012-05-18 2013-12-05 Hamamatsu Photonics Kk Spectral sensor
WO2013172230A1 (en) * 2012-05-18 2013-11-21 浜松ホトニクス株式会社 Spectral sensor
CN104272069A (en) * 2012-05-18 2015-01-07 浜松光子学株式会社 Spectroscopic sensor
US9273999B2 (en) 2012-05-18 2016-03-01 Hamamatsu Photonics K.K. Spectroscopic sensor
US9671286B2 (en) 2012-05-18 2017-06-06 Hamamatsu Photonics K.K. Spectroscopic sensor having a wire connected to a substrate through a hole of a filter region
US9846076B2 (en) 2012-05-18 2017-12-19 Hamamatsu Photonics K.K. Spectral sensor
WO2013172231A1 (en) * 2012-05-18 2013-11-21 浜松ホトニクス株式会社 Spectroscopic sensor
JP2016122004A (en) * 2015-12-25 2016-07-07 セイコーエプソン株式会社 Spectroscopic sensor and pulse oximeter

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