JPS6433796A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS6433796A
JPS6433796A JP18969087A JP18969087A JPS6433796A JP S6433796 A JPS6433796 A JP S6433796A JP 18969087 A JP18969087 A JP 18969087A JP 18969087 A JP18969087 A JP 18969087A JP S6433796 A JPS6433796 A JP S6433796A
Authority
JP
Japan
Prior art keywords
output
circuit
memory cell
array
cell array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18969087A
Other languages
Japanese (ja)
Inventor
Kikuzo Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP18969087A priority Critical patent/JPS6433796A/en
Publication of JPS6433796A publication Critical patent/JPS6433796A/en
Pending legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To execute the speedy and stable reading of a memory cell by setting the width of the output change of a memory cell array to a small one, and amplifying and outputting the difference between the output, which reverses and amplifies the signal of the memory cell array, and the memory cell array. CONSTITUTION:A memory cell array 1 possesses plural memory cells connected to plural row lines and to plural column lines. In a semiconductor memory device, which is equipped with a sense amplifier circuit 2 to increase the output of the memory cell array 1 by obtaining a power from an external power source, the circuit 2 includes an inverter circuit 3, first and second control circuits 4 and 5, an inverse amplifier 6 and a differential amplifier 7. Here, based on the output of the circuit 3, the circuit 4 feeds back and controls the output of the array 1, and the circuit 5 controls the output of the array 1 based on the output of the circuit 3 and the potential of the external power source. The circuit 6 reverses and amplifies the output of the array 1, amplifies 7 the difference between the output of the circuit 6 and the output of the array 1, and outputs it.
JP18969087A 1987-07-29 1987-07-29 Semiconductor memory device Pending JPS6433796A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18969087A JPS6433796A (en) 1987-07-29 1987-07-29 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18969087A JPS6433796A (en) 1987-07-29 1987-07-29 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS6433796A true JPS6433796A (en) 1989-02-03

Family

ID=16245553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18969087A Pending JPS6433796A (en) 1987-07-29 1987-07-29 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6433796A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6968609B2 (en) 2001-03-01 2005-11-29 Murata Manufacturing Co., Ltd. Nonreciprocal circuit device, communication device, and method of manufacturing nonreciprocal circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6968609B2 (en) 2001-03-01 2005-11-29 Murata Manufacturing Co., Ltd. Nonreciprocal circuit device, communication device, and method of manufacturing nonreciprocal circuit device

Similar Documents

Publication Publication Date Title
JPS6457495A (en) Semiconductor memory device
SE8900860D0 (en) TRANSMISSION POWER CIRCUIT AND WAY TO CONTROL POWER CONSUMPTION IN A RF POWER MODULE
KR910016002A (en) Sense Amplifier and Method for Sensing the Output of a Static Constant Velocity Call Memory Cell
KR930001226A (en) Sense Amplifiers Perform High-Speed Sensing Operations
EP0451595A3 (en) Short circuit detector circuit for memory array
KR900015156A (en) Dynamic RAM Readout Circuit
KR920008769A (en) Sense Amplifiers for Non-Destructive Semiconductor Memory
EP0847058A3 (en) Improvements in or relating to integrated circuits
EP0331113A3 (en) Semiconductor memory device
JPS6419584A (en) Semiconductor memory device
TW358946B (en) Semiconductor memory having a fast operation circuit array structure
US5253137A (en) Integrated circuit having a sense amplifier
KR920006983A (en) Semiconductor memory device with low noise sensing structure
JPS57203290A (en) Ic memory
TW374168B (en) DRAM with new I/O data path configuration
IE892758L (en) Integrated memory circuit comprising a parallel and serial¹input and output
KR0155374B1 (en) Integrated field effect transistor memory
KR880004483A (en) Semiconductor Memory with Data Bus Reset Circuit
JPS6433796A (en) Semiconductor memory device
EP0329177A3 (en) Semiconductor memory device which can suppress operation error due to power supply noise
EP0316877A3 (en) Semiconductor memory device with improved output circuit
EP0467638A3 (en) Semiconductor memory device
JPS57166670A (en) Division circuit
JPS5429936A (en) Pre-amplifier
JPS57117178A (en) Memory circuit