JPS6428380A - Formation of cuinse2 film - Google Patents

Formation of cuinse2 film

Info

Publication number
JPS6428380A
JPS6428380A JP18497287A JP18497287A JPS6428380A JP S6428380 A JPS6428380 A JP S6428380A JP 18497287 A JP18497287 A JP 18497287A JP 18497287 A JP18497287 A JP 18497287A JP S6428380 A JPS6428380 A JP S6428380A
Authority
JP
Japan
Prior art keywords
paste
cuinse2
laser
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18497287A
Other languages
Japanese (ja)
Inventor
Toshio Hama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP18497287A priority Critical patent/JPS6428380A/en
Publication of JPS6428380A publication Critical patent/JPS6428380A/en
Pending legal-status Critical Current

Links

Landscapes

  • Other Surface Treatments For Metallic Materials (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To easily form a CuInSe2 film by applying paste of CuInSe2 powder to a substrate by screen printing and by radiating prescribed laser light to dry and solidify the paste. CONSTITUTION:Paste of CuInSe2 crystal powder is applied to a substrate by screen printing. CO2 laser, Nd:YAG laser or semiconductor laser is prepd. as a laser light source. Laser light from the source is radiated on the paste applied surface of the substrate. The paste is dried and solidified by the radiation and a CuInSe2 film is formed.
JP18497287A 1987-07-24 1987-07-24 Formation of cuinse2 film Pending JPS6428380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18497287A JPS6428380A (en) 1987-07-24 1987-07-24 Formation of cuinse2 film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18497287A JPS6428380A (en) 1987-07-24 1987-07-24 Formation of cuinse2 film

Publications (1)

Publication Number Publication Date
JPS6428380A true JPS6428380A (en) 1989-01-30

Family

ID=16162570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18497287A Pending JPS6428380A (en) 1987-07-24 1987-07-24 Formation of cuinse2 film

Country Status (1)

Country Link
JP (1) JPS6428380A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0797213A (en) * 1993-09-28 1995-04-11 Agency Of Ind Science & Technol In compound and its production
US5759067A (en) * 1996-12-11 1998-06-02 Scheer; Peter L. Shielded connector
JP2013251403A (en) * 2012-05-31 2013-12-12 Sekisui Chem Co Ltd Method of manufacturing photoelectric conversion layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0797213A (en) * 1993-09-28 1995-04-11 Agency Of Ind Science & Technol In compound and its production
US5759067A (en) * 1996-12-11 1998-06-02 Scheer; Peter L. Shielded connector
JP2013251403A (en) * 2012-05-31 2013-12-12 Sekisui Chem Co Ltd Method of manufacturing photoelectric conversion layer

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