JPS6425973A - Vapor deposition device of thin film - Google Patents
Vapor deposition device of thin filmInfo
- Publication number
- JPS6425973A JPS6425973A JP18107787A JP18107787A JPS6425973A JP S6425973 A JPS6425973 A JP S6425973A JP 18107787 A JP18107787 A JP 18107787A JP 18107787 A JP18107787 A JP 18107787A JP S6425973 A JPS6425973 A JP S6425973A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- thin film
- clusters
- cluster
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To prevent generation of breakdown and to enable deposition in a long time and to obtain a thin film with excellent production efficiency by integrating both the ionization part of a cluster and the heating part of a crucible into one body and controlling the ionization rate of the cluster by the position of the crucible. CONSTITUTION:Both the ionization part of a cluster and the heating part of a crucible are integrated into one body and high-purity silicon 1 of vapor-depositional substance is filled in the crucible 2 which is made of tantalum and has a silicified inner wall, and 20-25A current is allowed to flow to a filament 3 via an electric source 4 and thermions are generated and accelerated with about 2kV voltage impressed between the filament 3 and the crucible 2 by an electric source 5 and projected to the crucible 2 to heat it and high-purity silicon 1 is fused. Then one part of clusters 12 formed from silicon vapor which is jetted to the outside of the crucible 2 through a small hole 14 of the crucible 2 wherein the outside is evacuated at about 10<-7>Torr pressure is ionized by projection of thermions and accelerated with voltage impressed between the crucible 2, a substrate 13 and pulling electrodes 15. The ionization rate of the clusters 12 is controlled by changing the position of the crucible 2 for the substrate 13 to required height via gears 21, 22 and the clusters 12 are deposited on the substrate to form a thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18107787A JPS6425973A (en) | 1987-07-22 | 1987-07-22 | Vapor deposition device of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18107787A JPS6425973A (en) | 1987-07-22 | 1987-07-22 | Vapor deposition device of thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6425973A true JPS6425973A (en) | 1989-01-27 |
Family
ID=16094405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18107787A Pending JPS6425973A (en) | 1987-07-22 | 1987-07-22 | Vapor deposition device of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6425973A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005097730A (en) * | 2003-08-15 | 2005-04-14 | Semiconductor Energy Lab Co Ltd | Film-forming apparatus and manufacturing apparatus |
| US8123862B2 (en) | 2003-08-15 | 2012-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Deposition apparatus and manufacturing apparatus |
-
1987
- 1987-07-22 JP JP18107787A patent/JPS6425973A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005097730A (en) * | 2003-08-15 | 2005-04-14 | Semiconductor Energy Lab Co Ltd | Film-forming apparatus and manufacturing apparatus |
| US8123862B2 (en) | 2003-08-15 | 2012-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Deposition apparatus and manufacturing apparatus |
| US8524313B2 (en) | 2003-08-15 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5915982B2 (en) | Electric discharge chemical reaction device | |
| JPS5730325A (en) | Manufacture of amorphous silicon thin film | |
| US1809115A (en) | Apparatus for producing ions | |
| JPS6425973A (en) | Vapor deposition device of thin film | |
| US3296115A (en) | Sputtering of metals wherein gas flow is confined to increase the purity of deposition | |
| JPS56139673A (en) | Manufacture of lead coat | |
| JPS61213371A (en) | Crucible for vapor deposition | |
| US3789253A (en) | Crucible for vaporizing chemically active elements method of manufacturing the same and ion source including said crucible | |
| US2736810A (en) | Charge receptacles for use in ion source units | |
| US1076949A (en) | Valve-tube. | |
| JPH11109097A (en) | Surface producing anion source | |
| JP2004139913A (en) | Ion beam generating device, ion beam generating method, ion processing device, and ion processing method | |
| JP2791911B2 (en) | Ion source | |
| JPS62122209A (en) | Apparatus for forming thin film | |
| JPS6286154A (en) | Ejection device for molten material vapor | |
| JPH0516214Y2 (en) | ||
| JPS5835928B2 (en) | Manufacturing method of amorphous silicon | |
| JPS60211823A (en) | Forming apparatus for thin film semiconductor device | |
| JP2594949B2 (en) | Thin film forming equipment | |
| JPS6357938B2 (en) | ||
| JPH0466378B2 (en) | ||
| JPS5835927B2 (en) | Manufacturing method of amorphous silicon | |
| JPS6158967B2 (en) | ||
| JPS6386861A (en) | Replenishing device for vapor deposition material | |
| JPS61256623A (en) | Thin film formation equipment |